CN115298827A - 一种多层薄膜制备方法及多层薄膜 - Google Patents
一种多层薄膜制备方法及多层薄膜 Download PDFInfo
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- CN115298827A CN115298827A CN202080098589.7A CN202080098589A CN115298827A CN 115298827 A CN115298827 A CN 115298827A CN 202080098589 A CN202080098589 A CN 202080098589A CN 115298827 A CN115298827 A CN 115298827A
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- 238000002360 preparation method Methods 0.000 title abstract description 22
- 239000000463 material Substances 0.000 claims abstract description 322
- 239000000758 substrate Substances 0.000 claims abstract description 136
- 239000010409 thin film Substances 0.000 claims abstract description 54
- 239000010408 film Substances 0.000 claims abstract description 47
- 238000000034 method Methods 0.000 claims abstract description 45
- 239000013078 crystal Substances 0.000 claims abstract description 37
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 15
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 claims description 9
- 229910052454 barium strontium titanate Inorganic materials 0.000 claims description 5
- 229910002113 barium titanate Inorganic materials 0.000 claims description 5
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims description 5
- 229910052797 bismuth Inorganic materials 0.000 claims description 5
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 5
- 229910000859 α-Fe Inorganic materials 0.000 claims description 5
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 claims 2
- 230000009286 beneficial effect Effects 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 370
- 230000008569 process Effects 0.000 description 21
- 238000004519 manufacturing process Methods 0.000 description 11
- 239000011229 interlayer Substances 0.000 description 10
- 238000005137 deposition process Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 7
- 239000002356 single layer Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- 238000000137 annealing Methods 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 230000015654 memory Effects 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- -1 thickness Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 229920000090 poly(aryl ether) Polymers 0.000 description 1
- 229920003209 poly(hydridosilsesquioxane) Polymers 0.000 description 1
- 229920000052 poly(p-xylylene) Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 239000004634 thermosetting polymer Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B18/00—Layered products essentially comprising ceramics, e.g. refractory products
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/33—Thin- or thick-film capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B51/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors
- H10B51/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the memory core region
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Memories (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
本申请公开了一种多层薄膜制备方法及多层薄膜，其中方法主要包括：制备第一材料层，进而在第一材料层的表面层叠设置多个第二材料层。本申请实施例中，每个第二材料层包括第二衬底，第二衬底由铁电单晶材料构成。采用上述方法，可以在多层薄膜中制备多个由铁电单晶材料构成的薄膜层，有利于扩大铁电单晶材料在多层薄膜中的应用。
Description
PCT国内申请，说明书已公开。
Claims (22)
- PCT国内申请，权利要求书已公开。
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2020/079554 WO2021184171A1 (zh) | 2020-03-17 | 2020-03-17 | 一种多层薄膜制备方法及多层薄膜 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115298827A true CN115298827A (zh) | 2022-11-04 |
Family
ID=77768006
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202080098589.7A Pending CN115298827A (zh) | 2020-03-17 | 2020-03-17 | 一种多层薄膜制备方法及多层薄膜 |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN115298827A (zh) |
| WO (1) | WO2021184171A1 (zh) |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040175585A1 (en) * | 2003-03-05 | 2004-09-09 | Qin Zou | Barium strontium titanate containing multilayer structures on metal foils |
| CN102693837B (zh) * | 2011-03-23 | 2015-11-18 | 成都锐华光电技术有限责任公司 | 一种具有周期叠层铁电薄膜的电容及其制备方法 |
| CN102683577B (zh) * | 2011-10-28 | 2013-10-30 | 闫静 | BiFe1-yMnyO3外延复合薄膜及其制备方法 |
| CN109980014B (zh) * | 2019-03-26 | 2023-04-18 | 湘潭大学 | 一种后栅极铁电栅场效应晶体管及其制备方法 |
-
2020
- 2020-03-17 CN CN202080098589.7A patent/CN115298827A/zh active Pending
- 2020-03-17 WO PCT/CN2020/079554 patent/WO2021184171A1/zh active Application Filing
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| Publication number | Publication date |
|---|---|
| WO2021184171A1 (zh) | 2021-09-23 |
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