CN115291270A - Low-energy high-intensity ray measuring device based on combined SiPM array - Google Patents
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Abstract
The invention relates to a low-energy high-intensity ray measuring device based on a combined SiPM array, which is applied to a single-path controllable combined silicon photomultiplier (SiPM) array and an adding and amplifying circuit for low-energy high-intensity ray measurement, and solves the technical problems that the accurate adding and outputting signal amplitude and undistorted pulse waveform of a SiPM array type detector are difficult to obtain during low-energy high-intensity pulse ray measurement, and the low-energy high-intensity ray measuring device based on the combined SiPM array comprises a SiPM unit, an adding and amplifying circuit and a power supply conversion circuit, wherein the SiPM unit comprises a SiPM array formed by N single-chip SiPMs, N control switches corresponding to the N single-chip SiPMs, N loads and an alternating current coupling circuit, wherein N is an integer larger than or equal to 1; the power supply conversion circuit comprises a first power supply for generating power supply for the SiPM unit and a second power supply for supplying power for the addition and amplification circuit; the amplitude linear addition of the multi-channel signal output signals of the SiPM array is realized, and the pulse shape is basically unchanged.
Description
Technical Field
The invention particularly relates to a low-energy high-intensity ray measuring device based on a combined SiPM array, which is applied to a single-path controllable combined silicon photomultiplier (SiPM) array and an adding and amplifying circuit for low-energy high-intensity ray measurement.
Background
The principle of radiation detection is that the interaction of radiation with matter is used to generate an electrical signal in the detector from the energy deposited in the detector, the amplitude of the electrical signal represents the energy deposited in the detector from the incident particle, the shape of the electrical signal represents the type of incident particle, and the count rate of the pulses of the electrical signal represents the intensity of the incident particle. For low-energy high-intensity pulsed radiation, because of its relatively low energy, it is difficult to detect with conventional energy-deposition detectors, and it is necessary to obtain the intensity of the incident particles by counting. The conventional counting type detector has a single function, a novel scintillation detector based on a silicon photomultiplier (SiPM) array has strong single particle resolution capability, the amplitude of each path of output signals of the array detector is added, the amplitude of the added signals is in direct proportion to the number of incident particles, and the pulse shape is basically kept unchanged before and after the addition, so that the intensity of the incident particles and the type of the particles can be calculated according to the amplitude of the added output signals of the SiPM array detector. Compared with the traditional counting type measuring method, the design can obtain more comprehensive physical information and is simple and intuitive.
In order to obtain more accurate amplitudes of the summed output signals of the SiPM array type detector and undistorted pulse waveforms, it is necessary to design a front-end readout circuit with high bandwidth, low noise and better summing linearity, and the processing of the summation, dark count and its noise of the output signals of the multi-channel SiPM array type detector is a challenge.
Disclosure of Invention
The invention aims to solve the technical problems that accurate SiPM array type detector adding and outputting signal amplitude and undistorted pulse waveform are difficult to obtain in low-energy high-intensity pulse ray measurement, and provides a low-energy high-intensity ray measurement device based on a combined SiPM array, which realizes the linear addition of the SiPM array multi-channel signal outputting signal amplitude and basically keeps the pulse shape unchanged.
In order to solve the technical problems, the technical scheme adopted by the invention is as follows:
a low-energy high-intensity ray measuring device based on a combined SiPM array is characterized in that: the power supply comprises an SiPM unit, an addition and amplification circuit and a power supply conversion circuit;
the SiPM unit comprises an SiPM array formed by N single-chip SiPMs, N control switches corresponding to the N single-chip SiPMs, N loads and an alternating current coupling circuit, wherein N is an integer larger than or equal to 1;
the power supply conversion circuit comprises a first power supply for generating power supply for the SiPM unit and a second power supply for supplying power to the addition and amplification circuit;
the first power supply is respectively connected with the power supply input ends of the N single SiPMs through N control switches; the output ends of the N single-chip SiPMs are respectively connected with the input ends of the N loads and the alternating current coupling circuit;
the output ends of the N loads and the alternating current coupling circuit are respectively connected with N input ends of the adding and amplifying circuit; the output end of the adding and amplifying circuit is used for being connected with an external data acquisition system.
Further, the device also comprises a filter circuit; the filter circuit comprises a first-stage filter circuit and N second-stage filter circuits;
the first-stage filter circuit is connected to the output end of the first power supply;
and the N secondary filter circuits are respectively connected to the power input ends of the N single-chip SiPMs.
Furthermore, the output end of the load and alternating current coupling circuit is connected with the input end of the adding and amplifying circuit through a connector.
Furthermore, the adding and amplifying circuit comprises a reverse proportion attenuation adding circuit and a post-stage driving amplifying circuit which are sequentially connected;
n input ends of the reverse proportional attenuation and addition circuit are respectively connected with N loads and the output end of the alternating current coupling circuit;
the output end of the rear-stage driving amplification circuit is used for being connected with an external data acquisition system.
Further, the inverse proportional attenuation summing circuit includes a resistor R 1 、…、R N And current feedback operational amplifier A 1 Resistance R F1 And a resistor R T1 And a capacitor C 1 ；
Resistance R 1 、…、R N One end of the current feedback amplifier is respectively connected with the output ends of the N loads and the alternating current coupling circuit, and the other end of the current feedback amplifier is connected with the current feedback operational amplifier A 1 The inverting input end of the first switch is connected;
resistance R F1 One end of and a current feedback operational amplifier A 1 Is connected with the inverting input terminal of the current feedback type operational amplifier A, and the other end of the current feedback type operational amplifier A 1 The output ends of the two-way valve are connected;
resistance R T1 One end of and a current feedback operational amplifier A 1 The non-inverting input ends of the two-way switch are connected, and the other ends of the two-way switch are grounded;
capacitor C 1 One end of and a current feedback operational amplifier A 1 The other end of the output terminal is connected with the input terminal of the post-stage driving amplifying circuit.
Further, the post-stage driving amplifying circuitComprises an input operational amplifier A 2 Resistance R F2 And a resistor R G1 Resistance R T2 And a capacitor C 2 ；
Input operational amplifier A 2 Non-inverting input terminal and capacitor C 1 The other end of the first and second connecting rods is connected;
resistance R F2 One end and input operational amplifier A 2 Is connected with the inverting input terminal of the operational amplifier A, and the other end is connected with the input operational amplifier A 2 The output ends of the two-way valve are connected;
resistance R G1 One end and input operational amplifier A 2 The inverting input end of the transformer is connected, and the other end of the transformer is grounded;
resistance R T2 One end and input operational amplifier A 2 The non-inverting input end of the transformer is connected, and the other end of the transformer is grounded;
capacitor C 2 One end and input operational amplifier A 2 The output end of the system is connected with an external data acquisition system.
Further, R in the inverse proportional attenuation and sum circuit F1 ＝3R 1 ；
R 1 ＝R 2 ＝...＝R 36 ；
R T1 ＝R 1 //R 2 ...//R 36 //R F1 。
Furthermore, the overvoltage protection circuit is also included and is connected with the output end of the rear-stage drive amplifying circuit.
Further, the power conversion circuit comprises a DC/DC conversion circuit and an LDO voltage stabilizing circuit;
the DC/DC conversion circuit comprises a DC/DC1 module, a DC/DC2 module and a DC/DC3 module;
the LDO voltage stabilizing circuit comprises an LDO1 and an LDO2;
the input ends of the DC/DC1 module, the DC/DC2 module and the DC/DC3 module are connected with an external input power supply; the output end of the DC/DC1 module is connected with the input end of the LDO 1; the output end of the DC/DC2 module is connected with the input end of the LDO2;
LDO1 and LDO2 are used for current feedback type operational amplifier A 1 Input operational amplifier A 2 The overvoltage protection circuit provides working voltage;
the output end of the DC/DC3 module is respectively connected with the input ends of the N single-chip SiPMs through N control switches.
Further, the SiPM array comprises a 36-path SiPM 6X6 array formed by 36 single-chip SiPMs, the photosensitive area of each single-chip SiPM is 1mmx1mm, and the distance between every two adjacent single-chips SiPM is 0.1mm;
the interface circuit adopts a 20-pin direct-plug socket;
the overvoltage protection circuit adopts a fast recovery Schottky diode BAV99;
the control switch adopts a dial switch;
current feedback operational amplifier A 1 For AD8000, input operational amplifier A 2 Is OPA818;
the DC/DC1 module is a PTN78000WAH chip, the DC/DC2 module is a PTN78000AAH chip, and the DC/DC3 module is an LT3461ES6 chip;
LDO1 is LT1963AEQ chip, LDO2 is LT3015Q chip.
Compared with the prior art, the technical scheme of the invention has the beneficial effects that:
1. the invention adopts the mode of combining single SiPM into the SiPM array, thereby reducing the crosstalk between single SiPM channels; the working state of a single SiPM channel is controlled by adopting a control switch, and better channel consistency of a single SiPM is obtained by adjusting the gain resistance of the circuit; by adopting the structure of the addition amplifying circuit, the noise level of the amplifying circuit is reduced, and better addition linearity is obtained; the first-stage amplifying circuit (reverse proportion attenuation adding circuit) adopts a high-bandwidth and low-noise current feedback type operational amplifier, so that the pulse waveforms of the particles before and after addition are basically unchanged, and more physical information can be obtained while intensity information is obtained; the second-stage amplifying circuit (the rear-stage driving amplifying circuit) adopts a voltage feedback type input operational amplifier with low noise and high bandwidth FET input, obtains a better signal-to-noise ratio, and realizes low-noise and low-distortion in-phase driving amplification so as to meet the amplitude requirement of an input signal of an external data acquisition system.
2. The size of the SiPM array designed by the invention is selectable, the state of a single channel is controllable (namely the state of each output channel of the array detector is controllable), the single-channel performance test is convenient to develop, and the channel consistency can be realized by adjusting the parameters (an adding and amplifying circuit) of a back-end circuit.
3. The inverting proportion attenuation adding and amplifying circuit reduces the noise level, particularly the dark count of SiPM, improves the signal-to-noise ratio, has small waveform distortion and obtains better adding linearity; a rear stage drive amplification circuit; the signal-to-noise ratio is good, low-noise and low-distortion in-phase driving amplification is achieved, and the requirement for the amplitude of an input signal of a rear-end data acquisition system is met.
Drawings
FIG. 1 is a block diagram of the system components of an embodiment of the combined SiPM array-based low-energy high-intensity radiation measurement apparatus of the present invention.
Fig. 2 is a schematic diagram of a 36-way single-way controllable combined SiPM array in an embodiment of the invention.
Fig. 3 is a schematic diagram of an addition and amplification circuit in an embodiment of the present invention.
Fig. 4 is a schematic diagram of a power conversion circuit according to an embodiment of the invention.
Detailed Description
As shown in fig. 1, the low-energy high-intensity radiation measuring apparatus based on the combined SiPM array of the present invention includes a SiPM unit, an adding and amplifying circuit, and a power converting circuit;
the SiPM unit comprises an SiPM array formed by N single-chip SiPMs, N control switches corresponding to the N single-chip SiPMs, N loads and an alternating current coupling circuit, wherein N is an integer larger than or equal to 1; the power supply conversion circuit comprises a first power supply for generating power supply for the SiPM unit and a second power supply for supplying power for the addition and amplification circuit; the first power supply is respectively connected with the power supply input ends of the N single SiPMs through N control switches; the output ends of the N single-chip SiPMs are respectively connected with the input ends of the N loads and the alternating current coupling circuit; the output ends of the N loads and the alternating current coupling circuit are respectively connected with N input ends of the adding and amplifying circuit; the output end of the adding and amplifying circuit is used for being connected with an external data acquisition system.
Firstly, the device also comprises a filter circuit; the filter circuit comprises a primary filter circuit and N secondary filter circuits; the first-stage filter circuit is connected to the output end of the first power supply; and the N secondary filter circuits are respectively connected to the power input ends of the N single-chip SiPMs. The output end of the load and alternating current coupling circuit is connected with the input end of the adding and amplifying circuit through a connector.
Secondly, the adding and amplifying circuit comprises a reverse proportion attenuation adding circuit and a post-stage driving amplifying circuit which are sequentially connected; n input ends of the reverse proportional attenuation and addition circuit are respectively connected with N loads and the output end of the alternating current coupling circuit; the output end of the rear-stage driving amplification circuit is used for being connected with an external data acquisition system.
Then, the inverse proportional damping summing circuit includes a resistor R 1 、…、R N Current feedback operational amplifier A 1 Resistance R F1 Resistance R T1 And a capacitor C 1 (ii) a Resistance R 1 、…、R N One end of the current feedback amplifier is respectively connected with the output ends of the N loads and the alternating current coupling circuit, and the other end of the current feedback amplifier is connected with the current feedback operational amplifier A 1 The inverting input end of the first switch is connected; resistance R F1 One end of and a current feedback operational amplifier A 1 Is connected with the inverting input end of the current feedback type operational amplifier A, and the other end of the current feedback type operational amplifier A 1 The output ends of the two-way valve are connected; resistance R T1 One end of the operational amplifier and a current feedback type operational amplifier A 1 The non-inverting input end of the transformer is connected, and the other end of the transformer is grounded; capacitor C 1 One end of and a current feedback operational amplifier A 1 The output end of the amplifier is connected with the input end of the post-stage driving amplifying circuit, and the other end of the amplifier is connected with the input end of the post-stage driving amplifying circuit. Wherein R in the inverse proportional attenuation summing circuit F1 ＝3R 1 ；R 1 ＝R 2 ＝...＝R 36 ；R T1 ＝R 1 //R 2 ...//R 36 //R F1 。
Then, the post-stage driving amplifying circuit comprises an input operational amplifier A 2 Resistance R F2 And a resistor R G1 And a resistor R T2 And a capacitor C 2 (ii) a Input operational amplifier A 2 Non-inverting input terminal and capacitor C 1 The other end of the first and second connecting rods is connected; resistance R F2 One end and input operational amplifier A 2 Is connected with the inverting input terminal of the operational amplifier A, and the other end is connected with the input operational amplifier A 2 The output ends of the two-way valve are connected; resistance R G1 One end and input operational amplifier A 2 The inverting input end of the transformer is connected, and the other end of the transformer is grounded; resistance R T2 One end and input operational amplifier A 2 The non-inverting input end of the transformer is connected, and the other end of the transformer is grounded; capacitor C 2 One end and input operational amplifier A 2 The output end of the system is connected with an external data acquisition system.
The invention also comprises an overvoltage protection circuit which is connected with the output end of the post-stage driving amplification circuit.
Finally, the power conversion circuit comprises a DC/DC conversion circuit and an LDO voltage stabilizing circuit; the DC/DC conversion circuit comprises a DC/DC1 module, a DC/DC2 module and a DC/DC3 module; the LDO voltage stabilizing circuit comprises an LDO1 and an LDO2; the input ends of the DC/DC1 module, the DC/DC2 module and the DC/DC3 module are connected with an external input power supply; the output end of the DC/DC1 module is connected with the input end of the LDO 1; the output end of the DC/DC2 module is connected with the input end of the LDO2; LDO1 and LDO2 are used for current feedback type operational amplifier A 1 Input operational amplifier A 2 The overvoltage protection circuit provides working voltage; the output end of the DC/DC3 module is respectively connected with the input ends of the N single-chip SiPMs through N control switches.
The following describes an embodiment of a specific parameter configuration with reference to the drawings.
As shown in fig. 2, a design block diagram of a combined controllable SiPM array is shown, in this embodiment, a single-channel controllable combined SiPM 6x6 array and a front-end analog circuit design method are adopted. The combined SiPM 6X6 array includes a SiPM 6X6 array, a plurality of control switches, and a filter circuit.
The SiPM 6X6 array is formed by combining 36 paths of single SiPMs (TN series JSP-TN 1050-SMT) with the thickness of 1mmx1mm, which are produced by Hubei Kyoho technology Co., ltd, according to the interval of 0.1 mm. The single-way SiPM can control the working state thereof through a control switch. In this embodiment, the SiPM 6X6 array is divided into four regions V1, V2, V3, and V4, each region includes 9 arranged single sipms, and each region shares a group of filter circuits, so that the test and the debugging are convenient, simple and clear. The combinatorial controllable SiPM array may also be a 4-way SiPM array or a 16-way SiPM array.
The filter circuit is composed of two stages of filtering and is used for filtering noise of the SiPM power supply voltage (namely, the power supply conversion circuit). the-28V power supply voltage output by the power conversion circuit is divided into four paths of output voltage signals after being filtered by capacitors (0.1 uF and 10 uF) of a primary filter circuit, the output end of the primary filter circuit is respectively connected to one end of a control switch, the other end of the control switch is connected with a secondary filter circuit for secondary filtering, and the secondary filter circuit is composed of an RC (R =2K, C = 220nF) filter circuit.
The control switch consists of a switch S1, a switch S2, a switch S3 and a switch S4, wherein the switch S1, the switch S2, the switch S3 and the switch S4 are all surface-mounted dial switches; because the uniformity of the light source is not well controlled, the output is the sum of N paths of outputs, and the working state of each path is not well determined, the working state of a single path is difficult to distinguish after the sum, so the working state of the single path single chip SiPM is controlled by controlling the power supply voltage of the single chip SiPM, the performance of the single path single chip SiPM and the parameters of the single chip SiPM are convenient to test, and the parameters of the single chip SiPM are corrected in time. Specifically, the power supply voltage of other (N-1) paths of SiPM arrays is cut off by controlling switches (a switch S1, a switch S2, a switch S3 or a switch S4), only one path of SiPM or multiple paths of SiPMs are supplied with power (the number of the fixed paths), so that a single-chip SiPM normally works, the addition performance measurement of a single channel or multiple channels of the SiPM array is realized, and the amplitude consistency of the N channels or the addition output consistency of fixed paths can be corrected through circuit gain (for example, the amplitude of each N/4 path of addition and output signals is basically consistent by adjusting the gain of some channels).
The output circuit consists of a load resistor and a coupling capacitor, wherein the load resistor is selected from 50 ohms, and the coupling capacitor is 0.1uF; the interface circuit adopts a 20-pin direct-insertion socket, introduces input signals for the adding and amplifying circuit, adds and outputs one path of signals, adopts an SMA socket for leading out, and specifically introduces 36 paths of single SiPM output signals to the input end of the adding and amplifying circuit.
As shown in fig. 3, which is a schematic diagram of a summing and amplifying circuit, the summing and amplifying circuit mainly comprises an inverse proportion attenuation summing circuit, a rear stage driving amplifying circuit and an overvoltage protection circuit;
wherein, the inverse proportion attenuation adding circuit realizes a first stage 3 by a current feedback type operational amplifier A1 (AD 8000): 1 attenuation addition; the inverse proportional attenuation adding and amplifying circuit is composed of a current feedback operational amplifier A 1 (AD 8000) resistance R 1 -resistance R 36 Resistance R F1 Resistance R T1 And a capacitor C 1 Composition, resistance R 1 Resistance R 36 And a resistance R F1 The resistor is proportionally added by high-precision low-temperature drift 0.1 percent, R F1 ＝3R 1 ，R 1 ＝R 2 ＝...＝R 36 ，R T1 ＝R 1 //R 2 ...//R 36 //R F1 3, can be realized: 1 attenuation addition for reducing dark noise; in this embodiment, a current feedback operational amplifier a is adopted 1 (AD 8000) realizing low distortion and high bandwidth addition; capacitor C 1 The device is used for alternating current coupling and achieves zero resetting of a base line.
The rear-stage drive amplifying circuit is operated by an operational amplifier A 2 Resistance R F2 And a resistor R G1 Resistance R T2 Resistance R L And a capacitor C 2 Forming; in the embodiment, the FET input operational amplifier A2 (OPA 818) is adopted to realize low noise, low bias and high bandwidth amplification and drive a rear-end data acquisition system; gain =1+R F2 /R G1 . Resistance R T2 For adjusting bias, capacitance C 2 For ac coupling.
The overvoltage protection circuit consists of a fast recovery Schottky diode BAV99, and the output of the overvoltage protection circuit is led out by an SMA socket after the overvoltage protection circuit is positioned in the rear-stage drive amplification circuit, so as to protect the rear-end data acquisition system from being damaged.
As shown in FIG. 4, the power conversion circuit consists of a DC/DC converter and an LDO voltage regulator circuit, 12V is converted into +6V by a DC/DC1 module (PTN 78000WAH chip), and then becomes +5V through an LDO1 chip LT1963 AEQ; 12V is converted into-6V through a DC/DC2 module (PTN 78000AAH chip), and then is converted into-5V through an LT3015Q LDO2 chip; 12V is transformed to-28.5V by the DC/DC3 module (LT 3461ES6 chip) and then to-28V by LDO3TPS7A 3001. The DC/DC1 module and the DC/DC2 module are connected with the input end of the DC/DC3 module and then connected with an external 12V power supply; the output end of the DC/DC1 module is connected with the input end of the LDO 1; the output end of the DC/DC2 module is connected with the input end of the LDO2; the output end of the LDO1 is respectively connected with a current feedback type operational amplifier A 1 Input operational amplifier A 2 And an overvoltage protection circuit; the output end of LDO2 is respectively connected with a current feedback type operational amplifier A 1 Input operational amplifier A 2 And an overvoltage protection circuit; the output end of the DC/DC3 module is connected with the input end of the LDO3, and the output end of the LDO3 is respectively connected with the input ends of the N paths of single-chip SiPMs. The power supply is provided for the combined SiPM 6x6 array, the inverse proportion attenuation and summation circuit, the post-stage drive amplification circuit and the overvoltage protection circuit.
Claims (10)
1. The utility model provides a low energy high intensity ray measuring device based on combination formula SiPM array which characterized in that: the power supply comprises an SiPM unit, an adding and amplifying circuit and a power supply conversion circuit;
the SiPM unit comprises an SiPM array formed by N single-chip SiPMs, N control switches corresponding to the N single-chip SiPMs, N loads and an alternating current coupling circuit, wherein N is an integer larger than or equal to 1;
the power supply conversion circuit comprises a first power supply for generating power supply for the SiPM unit and a second power supply for supplying power to the adding and amplifying circuit;
the first power supply is respectively connected with the power supply input ends of the N single-chip SiPMs through N control switches; the output ends of the N single-chip SiPMs are respectively connected with the input ends of the N loads and the alternating current coupling circuit;
the output ends of the N loads and the alternating current coupling circuit are respectively connected with N input ends of the adding and amplifying circuit; and the output end of the adding and amplifying circuit is used for being connected with an external data acquisition system.
2. The combined SiPM array-based low-energy high-intensity radiation measurement device of claim 1, wherein: the circuit also comprises a filter circuit; the filter circuit comprises a primary filter circuit and N secondary filter circuits;
the first-stage filter circuit is connected to the output end of the first power supply;
and the N secondary filter circuits are respectively connected to the power input ends of the N single-chip SiPMs.
3. The combined SiPM array-based low-energy high-intensity radiation measurement device of claim 2, wherein: and the output end of the load and alternating current coupling circuit is connected with the input end of the summing and amplifying circuit through a connector.
4. A low-energy high-intensity radiation measuring apparatus based on a combined SiPM array as claimed in claim 3, wherein: the summing and amplifying circuit comprises a reverse proportion attenuation summing circuit and a rear-stage driving amplifying circuit which are sequentially connected;
n input ends of the reverse proportional attenuation and sum circuit are respectively connected with N loads and the output end of the alternating current coupling circuit;
and the output end of the rear-stage driving amplification circuit is used for connecting an external data acquisition system.
5. The combined SiPM array-based low-energy high-intensity radiation measurement device according to claim 4, wherein: the reverse proportional attenuation summing circuit comprises a resistor R 1 、…、R N Current feedback operational amplifier A 1 And a resistor R F1 Resistance R T1 And a capacitor C 1 ；
The resistance R 1 、…、R N One end of the current feedback amplifier is respectively connected with the output ends of the N loads and the alternating current coupling circuit, and the other end of the current feedback amplifier is connected with the current feedback operational amplifier A 1 The inverting input end of the first switch is connected;
the resistor R F1 One end of and a current feedback operational amplifier A 1 Is connected with the inverting input end of the current feedback type operational amplifier A, and the other end of the current feedback type operational amplifier A 1 The output ends of the two-way valve are connected;
the resistance R T1 One end of and a current feedback operational amplifier A 1 The non-inverting input ends of the two-way switch are connected, and the other ends of the two-way switch are grounded;
the capacitor C 1 One end of and a current feedback operational amplifier A 1 The output end of the amplifier is connected with the input end of the post-stage driving amplifying circuit, and the other end of the amplifier is connected with the input end of the post-stage driving amplifying circuit.
6. The combined SiPM array-based low-energy high-intensity radiation measurement device according to claim 5, wherein: the rear-stage drive amplifying circuit comprises an input operational amplifier A 2 And a resistor R F2 Resistance R G1 Resistance R T2 And a capacitor C 2 ；
The input operational amplifier A 2 Non-inverting input terminal and capacitor C 1 The other end of the first and second connecting rods is connected;
the resistor R F2 One end and input operational amplifier A 2 Is connected with the inverting input terminal of the operational amplifier A, and the other end is connected with the input operational amplifier A 2 The output ends of the two-way valve are connected;
the resistance R G1 One end and input operational amplifier A 2 The inverting input end of the transformer is connected, and the other end of the transformer is grounded;
the resistor R T2 One end and input operational amplifier A 2 The non-inverting input ends of the two-way switch are connected, and the other ends of the two-way switch are grounded;
the capacitor C 2 One end and input operational amplifier A 2 The output end of the system is connected with an external data acquisition system.
7. The combined SiPM array-based low-energy high-intensity radiation measurement device of claim 6, wherein: r in the inverse proportional attenuation and sum circuit F1 ＝3R 1 ；
R 1 ＝R 2 ＝...＝R 36 ；
R T1 ＝R 1 //R 2... //R 36 //R F1 。
8. The combined SiPM array-based low-energy high-intensity radiation measurement device of claim 7, wherein: the overvoltage protection circuit is connected with the output end of the rear-stage drive amplifying circuit.
9. The apparatus of claim 8, wherein the low energy and high intensity radiation measuring apparatus comprises: the power conversion circuit comprises a DC/DC conversion circuit and an LDO voltage stabilizing circuit;
the DC/DC conversion circuit comprises a DC/DC1 module, a DC/DC2 module and a DC/DC3 module;
the LDO voltage stabilizing circuit comprises an LDO1 and an LDO2;
the input ends of the DC/DC1 module, the DC/DC2 module and the DC/DC3 module are connected with an external input power supply; the output end of the DC/DC1 module is connected with the input end of the LDO 1; the output end of the DC/DC2 module is connected with the input end of the LDO2;
LDO1 and LDO2 are used for current feedback type operational amplifier A 1 Input operational amplifier A 2 The overvoltage protection circuit provides working voltage;
the output end of the DC/DC3 module is respectively connected with the input ends of the N single-chip SiPMs through N control switches.
10. The combined SiPM array-based low-energy high-intensity radiation measurement device of claim 9, wherein: the SiPM array comprises 36 paths of SiPM 6X6 arrays consisting of 36 single-chip SiPMs, the photosensitive area of each single-chip SiPM is 1mmx1mm, and the distance between every two adjacent single-chips SiPM is 0.1mm;
the interface circuit adopts a 20-pin direct-insertion socket;
the overvoltage protection circuit adopts a fast recovery Schottky diode BAV99;
the control switch adopts a dial switch;
the current feedback type operational amplifier A 1 For AD8000, input operational amplifier A 2 Is OPA818;
the DC/DC1 module is a PTN78000WAH chip, the DC/DC2 module is a PTN78000AAH chip, and the DC/DC3 module is an LT3461ES6 chip;
the LDO1 is an LT1963AEQ chip, and the LDO2 is an LT3015Q chip.
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