CN115275550B - Miniaturized low insertion loss duplexer - Google Patents

Miniaturized low insertion loss duplexer Download PDF

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CN115275550B
CN115275550B CN202211021512.7A CN202211021512A CN115275550B CN 115275550 B CN115275550 B CN 115275550B CN 202211021512 A CN202211021512 A CN 202211021512A CN 115275550 B CN115275550 B CN 115275550B
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dielectric plate
low
dielectric
pass
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CN115275550A (en
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孙保华
安祥
张瑞
郭景丽
邹艳林
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Xidian University
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Xidian University
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00Auxiliary devices
    • H01P1/20Frequency-selective devices, e.g. filters
    • H01P1/213Frequency-selective devices, e.g. filters combining or separating two or more different frequencies
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00Auxiliary devices
    • H01P1/20Frequency-selective devices, e.g. filters
    • H01P1/213Frequency-selective devices, e.g. filters combining or separating two or more different frequencies
    • H01P1/2135Frequency-selective devices, e.g. filters combining or separating two or more different frequencies using strip line filters
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02DCLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D30/00Reducing energy consumption in communication networks
    • Y02D30/70Reducing energy consumption in communication networks in wireless communication networks

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Abstract

A miniaturized low-insertion-loss duplexer comprises five layers of dielectric plates, wherein first to fifth layers of dielectric plates are arranged from top to bottom respectively, two sides of each layer of dielectric plate are coated with copper, metal through holes are designed, cuboids are removed from a second layer of dielectric plate and a fourth layer of dielectric plate to form an air cavity, a circuit part is distributed on the upper side and the lower side of the third layer of dielectric plate, and the dielectric plates of all layers are pressed together through screws; the circuit part adopts a complementary duplex principle and comprises three output ports, three transition structures, a low-pass branch, a high-pass branch and a metal through hole; the three output ports are formed by microstrip lines, the high-pass branch and the low-pass branch are formed by high-impedance lines and flat capacitors, one end of each high-pass branch is connected in parallel with a common port and is connected in series with a transition structure, and the other end of each high-pass branch is directly connected in series with the transition structure; in the transition structure, a microstrip line feeder is connected with the inner core, metal through holes are designed on two sides of the feeder, and output ports are connected in series at the tail end of the transition structure; the self-packaging characteristic is achieved, the processing is simple, and the low insertion loss is realized while the miniaturization is realized.

Description

Miniaturized low insertion loss duplexer
Technical Field
The invention belongs to the technical field of duplexers, and particularly relates to a small-sized low-insertion-loss duplexer.
Background
The duplexer is used as a core device of a wireless signal communication system, can realize the combination of two pilot frequency signals or the division of two paths of frequency bands of a single broadband signal, and the insertion loss and the isolation are key indexes for measuring the performance of the duplexer. The design method of the present common duplexer has a circulator coupling type, a public terminal adding and absorbing network and a complementary duplexer; the circulator coupling type is easy to modularize, but the introduction of the circulator causes the circuit to be large in volume and narrow in working bandwidth; the public end absorption network is suitable for the conditions of long frequency band distance and narrow work; the complementary duplexer has a simple structure, but it is very complicated to design a multiplexer having a plurality of channels.
The specific implementation forms of the duplexer include a dielectric duplexer, a coaxial cavity duplexer, a waveguide duplexer and a microstrip duplexer, and with the rapid development of practical applications in various fields, especially 5G communication technology, the requirements on the size, weight and power consumption of an electronic system are higher and higher, and the desire of people to find the duplexer with low insertion loss and small size is more and more urgent.
For example, an invention patent named "planar microstrip duplexer" (application No. 201711304351.1, granted patent No. CN 108183293A) applied by the university of nanjing physical engineers discloses a planar microstrip duplexer, which includes a microstrip circuit and a dielectric plate of double-sided copper, wherein the dielectric plate adopts Rogers4533 with a dielectric constant of 3.3 and a thickness of 0.508mm, and the microstrip circuit includes: the T-shaped joint, the high-pass filter, the low-pass filter and the two output ports; the high-pass filter and the low-pass filter are both formed by microstrip stubs, wherein each stub of the high-pass filter is connected with the floor through a metal through hole to form a short stub for introducing magnetic coupling; one end of each of the two filters is connected in parallel to the T-shaped joint through a quarter-wave impedance converter, and the other end of each of the two filters is connected with an output port; the planar microstrip duplexer has the advantages of simple structure, light weight, small volume, small in-band insertion loss, low production cost and the like.
The invention discloses a coaxial cavity duplexer (application number 201921176212.X, granted patent number CN 210430050U) applied by university of south China's marble in the name of the invention, which comprises four convex resonant cavities, namely a first-order resonant cavity at the left side, a second-order resonant cavity in the middle and a third-order resonant cavity at the back and the right side, wherein the resonant cavities are coupled through a coupling resonant window, the first-order resonant cavity and the second-order resonant cavity have double-frequency characteristics, and the third-order resonant cavity is a single-frequency resonant cavity; coaxial feed lines are arranged on the first resonant cavity and the third resonant cavity and serve as output ports, inner cores of the coaxial feed lines extend into the vertical metal cylinder of the first resonant cavity and the resonant rod of the third resonant cavity, and the coaxial cavity duplexer has the advantages of compact structure, easiness in tuning, good selectivity and the like.
In summary, how to achieve miniaturization and low insertion loss is always a key research problem for designing duplexers, a planar microstrip duplexer utilizes a dielectric plate with a dielectric constant of 3.3 to reduce the volume, and adopts a microstrip stub to design a filter to reduce the loss in the signal transmission process, but the microstrip line has dielectric loss and radiation loss, the insertion loss also has a further optimized space, and the duplexer covers a narrow frequency band and cannot cover a 5G frequency band; the coaxial cavity reduces the volume by reducing the number of resonant cavities by using a common resonant cavity, but the overall size of the duplexer is larger due to the fact that the size of the resonant cavity is required to be compared with a quarter wavelength, and the coverage bandwidth of the structure is narrow. Therefore, a duplexer capable of covering a 5G frequency band while achieving miniaturization and low insertion loss is urgently needed to be applied to a 5G base station antenna.
Disclosure of Invention
In order to overcome the disadvantages of the prior art, the invention aims to provide a miniaturized low-insertion-loss duplexer which has self-packaging characteristics, is easy to process, and realizes low insertion loss while being miniaturized.
In order to achieve the purpose, the invention adopts the technical scheme that:
the utility model provides a miniaturized low insertion loss duplexer, based on integrated suspension line of medium (SISL) technique, constitute by five layers of dielectric slabs, from the top down is first layer dielectric slab 1 respectively, second floor dielectric slab 2, third layer dielectric slab 3, fourth layer dielectric slab 4, fifth layer dielectric slab 5, every layer of dielectric slab all two-sided copper of covering and design metal through-hole guarantee that ground connection is good, detach the cuboid that the size is the same on second layer dielectric slab 2 and fourth layer dielectric slab 4 and bordure the constitution air cavity in both sides with the metal, duplexer circuit part distributes in the upper and lower both sides of third layer dielectric slab 3, each layer of dielectric slab passes through the screw pressfitting and is in the same place.
The duplexer circuit part adopts the principle of complementary duplex and comprises three output ports, three transition structures from SISL to microstrip lines, a low-pass branch, a high-pass branch and a metal through hole; the three output ports are formed by microstrip lines, the high-pass branch and the low-pass branch are formed by high-impedance lines and flat capacitors, one end of each high-pass branch is connected in parallel with a common port and is connected in series with a transition structure, and the other end of each high-pass branch is directly connected in series with the transition structure; in the transition structure, a microstrip line feeder is connected with a SISL inner core, metal through holes are designed on two sides of the feeder to ensure good grounding, good matching is realized, energy loss caused by resonance is prevented, and three output ports are connected at the tail end of the transition structure in series.
The low-pass branch and the high-pass branch are based on the Chebyshev high-low-pass filter, and some capacitance inductance values of the low-pass branch and the high-pass branch are adjusted to ensure thatThe sum of susceptances of the two channels is 0, and the conductance is Y in the respective frequency bands 0 And the crosstalk between frequency bands is counteracted, and the duplex is realized.
One low-pass unit in the low-pass branch consists of two high-impedance lines connected in series and a flat capacitor with one end connected in parallel and grounded, wherein one surface of the flat capacitor is connected with the high-impedance line, the other surface of the flat capacitor is connected with the ground, and the low-pass effect is realized by adjusting the inductance and the capacitance; and one high-pass unit in the high-pass branch consists of two serially connected plate capacitors and a high-impedance line with one end connected in parallel and grounded, and the high-pass effect is realized by adjusting the inductance value of the capacitors.
The first layer of dielectric plate 1 and the fifth layer of dielectric plate 5 are FR4 with the thickness of 0.6mm and the dielectric constant of 4.4, the second layer of dielectric plate 2 and the fourth layer of dielectric plate 4 are FR4 with the thickness of 2mm and the dielectric constant of 4.4, and the third layer of dielectric plate 3 is R5880 with the thickness of 0.254mm and the dielectric constant of 2.2; the same size of rectangle is removed at the 3 transition structures on the lower surface of the second dielectric plate 2 to prevent the short circuit of the feeder line.
Compared with the prior art, the invention has the following advantages:
the invention is based on SISL structure, electromagnetic wave is transmitted in the air between the inner core and the metal wall, and the duplexer can realize the insertion loss below 0.4dB in the pass band because of no dielectric loss.
The invention adopts the principle of a complementary duplexer, does not contain a consumption network, has simple circuit form and is easy to realize.
The invention adopts the structure of the stub line and the flat capacitor, replaces the inductor with a small section of high-impedance line, and covers copper on two sides of the dielectric plate with the thickness of 0.254mm to form the flat capacitor.
The SISL structure of the invention is formed by laminating five layers of PCB boards, and a transition structure from SISL to a microstrip line is arranged at a port, so that the duplexer of the invention is easy to integrate with other planar circuits.
Drawings
FIG. 1 is a cross-sectional view of a dielectric integrated suspension line (SISL) of the present invention.
Fig. 2 is an equivalent circuit diagram of the duplexer of the present invention.
Fig. 3 is a plan parameter diagram of a unit in the low-pass branch of the duplexer of the present invention and its equivalent circuit diagram.
Fig. 4 is a plan parameter diagram of a unit in the high pass branch of the duplexer of the present invention and its equivalent circuit diagram.
Fig. 5 is a plan view of a third dielectric sheet 3 according to the present invention.
Fig. 6 is a layered diagram of the miniaturized low-insertion-loss duplexer according to the present invention.
Fig. 7 is a graph of insertion loss simulation results for two output ports of the present invention.
Fig. 8 is a graph of a simulation result of return loss of the input port of the present invention.
FIG. 9 is a pictorial view of the present invention.
Fig. 10 is a graph of the insertion loss measurement results of two output ports according to the present invention.
Detailed Description
The technical solution of the present invention is further described in detail below with reference to the accompanying drawings and examples.
Referring to fig. 1, a miniaturized low insertion loss duplexer, based on SISL structure, is composed of five layers of dielectric plates, from top to bottom are respectively a first layer of dielectric plate 1, a second layer of dielectric plate 2, a third layer of dielectric plate 3, a fourth layer of dielectric plate 4, a fifth layer of dielectric plate 5, each layer of dielectric plate is double-sided coated with copper and designed with metal through holes to ensure good grounding, cuboids with the same size are removed from the second layer of dielectric plate 2 and the fourth layer of dielectric plate 4, and metal is added on both sides to wrap the sides to form an air cavity, a duplexer circuit part is distributed on the upper and lower sides of the third layer of dielectric plate 3, each layer of dielectric plate is pressed together by screws, because most electromagnetic waves are distributed in the air but not in the medium, high Q value and extremely low insertion loss can be realized, in addition, the structure can also realize effective electromagnetic shielding, mutual interference caused by scattering is prevented, and the duplexer has a self-packaging characteristic.
As shown in FIG. 2, the duplexer circuit is composed of a low-pass branch and a high-pass branch connected in parallel to a common port, and based on the Chebyshev high-low-pass filter, some capacitance and inductance values are adjusted to make the sum of susceptances of two channels be 0 and the conductance of the two channels be 0In the respective frequency band is Y 0 Thereby canceling crosstalk between frequency bands and realizing duplexing.
Referring to fig. 3 and 4, a shaded portion in the figures is that copper is coated on the back of a dielectric plate, a duplexer circuit portion is constructed by a high-impedance line and a flat capacitor, one low-pass unit is composed of two high-impedance lines connected in series and a flat capacitor with one end connected in parallel to the ground, one surface of the flat capacitor is connected with the high-impedance line, the other surface of the flat capacitor is connected with the ground, and proper inductance and capacitance values can be obtained by adjusting the length LLl of the high-impedance line of the low-pass unit, the width LLw of the high-impedance line of the low-pass unit, the length LCl of the flat capacitor of the low-pass unit and the width LCw of the flat capacitor of the low-pass unit, so that a low-pass effect is realized; and one high-pass unit is composed of two plate capacitors connected in series and a high-impedance line with one end connected in parallel and grounded, and a proper capacitance inductance value can be obtained by adjusting the length HLl of the high-impedance line of the high-pass unit, the width HLw of the high-impedance line of the high-pass unit, the length HCl of the plate capacitor of the high-pass unit and the width HCw of the plate capacitor of the high-pass unit, so that the high-pass effect is realized.
As shown in fig. 5, fig. 5 is a plan view of the third dielectric board 3, a shaded portion is copper-clad on the back of the dielectric board (except for the circuit portion, all copper-clad on the back is not shown in fig. 5), and a miniaturized low-insertion-loss duplexer includes three output ports, a transition structure from three microstrip lines to SISL, a low-pass branch, a high-pass branch, and metal through holes SH, SH1, GH and GH1; one end of each of the high-pass branch and the low-pass branch is connected in parallel with a common port, the other end of each of the high-pass branch and the low-pass branch is connected in series with a SISL-to-microstrip transition structure, and metal through holes GH and GH1 are designed on two sides of the microstrip line, wherein the GH can realize good grounding so that the microstrip line is well matched with the SISL, and the GH1 can reduce the dielectric loss of the microstrip line; three output ports are connected in series at three transition structures, a pad is connected in series at the tail end of a feeder line of the microstrip line, and partial copper is removed from two sides of the pad to be connected with the SMA; and finally, pressing the five layers of dielectric plates through the metal through holes SH1 and SH by using screws.
Referring to fig. 6, a miniaturized low-insertion-loss duplexer is composed of five dielectric slabs, a first dielectric slab 1 and a fifth dielectric slab 5 are FR4 with a thickness of 0.6mm and a dielectric constant of 4.4, a second dielectric slab 2 and a fourth dielectric slab 4 are FR4 with a thickness of 2mm and a dielectric constant of 4.4, and a third dielectric slab 3 is R5880 with a thickness of 0.254mm and a dielectric constant of 2.2; note that rectangles of the same size are removed at the 3 transition structures on the lower surface of the second layer dielectric plate 2 to prevent the feed line from short-circuiting.
Referring to fig. 7 and 8, fig. 7 is a graph showing simulation results of the insertion loss of the miniaturized low-insertion-loss duplexer of the present invention, wherein the insertion loss is less than 0.4dB in two pass bands of 0.69GHz-2.69GHz and 3.3GHz-5 GHz; FIG. 8 is a graph of the return loss simulation results of the present invention with a return loss in the pass band of less than-15 dB.
Referring to fig. 9 and 10, fig. 9 is a diagram of a miniaturized duplexer with low insertion loss according to the present invention, fig. 10 is a diagram of actually measured insertion loss of the miniaturized duplexer, and the loss includes loss of SMA joints used for connection, wherein the insertion loss in the frequency band of 0.69GHz-2.69GHz is less than 0.4dB, the insertion loss in the frequency band of 3.3GHz-5GHz is less than 0.5dB, and the loss of SMA joints around 0.1dB in high frequency is included.

Claims (3)

1. The utility model provides a miniaturized low insertion loss duplexer which characterized in that: based on a medium integrated suspension line (SISL) technology, the high-voltage and high-voltage integrated circuit is composed of five layers of dielectric plates, namely a first layer of dielectric plate (1), a second layer of dielectric plate (2), a third layer of dielectric plate (3), a fourth layer of dielectric plate (4) and a fifth layer of dielectric plate (5) from top to bottom, wherein two sides of each layer of dielectric plate are coated with copper, metal through holes are designed to ensure good grounding, cuboids with the same size are removed from the second layer of dielectric plate (2) and the fourth layer of dielectric plate (4), metal edges are added on two sides of each dielectric plate to form an air cavity, a duplexer circuit part is distributed on the upper side and the lower side of the third layer of dielectric plate (3), and each layer of dielectric plates are pressed together through screws;
the duplexer circuit part adopts the principle of complementary duplex and comprises three output ports, three transition structures from SISL to microstrip lines, a low-pass branch, a high-pass branch and a metal through hole; the three output ports are formed by microstrip lines, the high-pass branch and the low-pass branch are formed by high-impedance lines and flat capacitors, one end of each high-pass branch is connected in parallel with a common port and is connected in series with a transition structure, and the other end of each high-pass branch is directly connected in series with the transition structure; in the transition structure, a microstrip line feeder is connected with a SISL inner core, metal through holes are designed on two sides of the feeder to ensure good grounding, good matching is realized, and energy loss caused by resonance is prevented from being generated;
the low-pass branch and the high-pass branch adjust capacitance inductance values of the two channels to enable the sum of susceptances of the two channels to be 0 and the conductance to be Y0 in respective frequency bands on the basis of the Chebyshev high-low-pass filter, so that crosstalk between frequency bands is counteracted, and duplex is realized.
2. The miniaturized low-insertion-loss duplexer of claim 1, wherein: one low-pass unit in the low-pass branch circuit is composed of a high-impedance line and a flat capacitor, wherein the two ends of the flat capacitor are connected in series and the two ends of the flat capacitor are connected in parallel and are grounded, one surface of the flat capacitor is connected with the high-impedance line, the other surface of the flat capacitor is connected with the ground, and the low-pass effect is realized by adjusting the inductance capacitance value; and one high-pass unit in the high-pass branch consists of two serially connected plate capacitors and a high-impedance line with one end connected in parallel and grounded, and the high-pass effect is realized by adjusting the inductance value of the capacitors.
3. The miniaturized low-insertion-loss duplexer of claim 1, wherein: the first layer of dielectric plate (1) and the fifth layer of dielectric plate (5) are FR4 with the thickness of 0.6mm and the dielectric constant of 4.4, the second layer of dielectric plate (2) and the fourth layer of dielectric plate (4) are FR4 with the thickness of 2mm and the dielectric constant of 4.4, and the third layer of dielectric plate (3) is R5880 with the thickness of 0.254mm and the dielectric constant of 2.2; the rectangles with the same size are removed at the 3 transition structures on the lower surface of the second layer dielectric plate (2) to prevent the short circuit of the feeder line.
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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101778531A (en) * 2010-02-23 2010-07-14 华为技术有限公司 Integrated printed circuit board
CN108598638A (en) * 2018-04-13 2018-09-28 电子科技大学 The multiplexer structure of suspended substrate stripline is integrated based on medium
CN109301416A (en) * 2018-10-18 2019-02-01 西安电子科技大学 Suspend substrate integration wave-guide transmission line
CN110661067A (en) * 2019-09-12 2020-01-07 天津大学 Band-pass filter of dielectric integrated suspension line based on 5G double-frequency
CN113346205A (en) * 2021-05-13 2021-09-03 西南交通大学 Continuous same broadband triplexer of generalized Chebyshev function response channel

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106785270B (en) * 2016-12-29 2019-06-18 西安空间无线电技术研究所 A kind of microwave complementation duplexer
CN112563704A (en) * 2019-09-25 2021-03-26 天津大学 Self-packaged wide-stop-band-pass filter based on medium integrated suspension line

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101778531A (en) * 2010-02-23 2010-07-14 华为技术有限公司 Integrated printed circuit board
CN108598638A (en) * 2018-04-13 2018-09-28 电子科技大学 The multiplexer structure of suspended substrate stripline is integrated based on medium
CN109301416A (en) * 2018-10-18 2019-02-01 西安电子科技大学 Suspend substrate integration wave-guide transmission line
CN110661067A (en) * 2019-09-12 2020-01-07 天津大学 Band-pass filter of dielectric integrated suspension line based on 5G double-frequency
CN113346205A (en) * 2021-05-13 2021-09-03 西南交通大学 Continuous same broadband triplexer of generalized Chebyshev function response channel

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