CN115275550B - Miniaturized low insertion loss duplexer - Google Patents

Miniaturized low insertion loss duplexer Download PDF

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CN115275550B
CN115275550B CN202211021512.7A CN202211021512A CN115275550B CN 115275550 B CN115275550 B CN 115275550B CN 202211021512 A CN202211021512 A CN 202211021512A CN 115275550 B CN115275550 B CN 115275550B
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CN115275550A (en
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孙保华
安祥
张瑞
郭景丽
邹艳林
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Xidian University
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00Auxiliary devices
    • H01P1/20Frequency-selective devices, e.g. filters
    • H01P1/213Frequency-selective devices, e.g. filters combining or separating two or more different frequencies
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00Auxiliary devices
    • H01P1/20Frequency-selective devices, e.g. filters
    • H01P1/213Frequency-selective devices, e.g. filters combining or separating two or more different frequencies
    • H01P1/2135Frequency-selective devices, e.g. filters combining or separating two or more different frequencies using strip line filters
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02DCLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D30/00Reducing energy consumption in communication networks
    • Y02D30/70Reducing energy consumption in communication networks in wireless communication networks

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Abstract

一种小型化低插损双工器,由五层介质板构成,从上到下分别为第一至第五层介质板,每层介质板都双面覆铜且设计金属通孔,在第二层和第四层介质板上除去长方体构成空气腔,电路部分分布在第三层介质板上下两侧,各层介质板通过螺钉压合在一起;电路部分采用了互补双工原理,包括三个输出端口、三个过渡结构、低通支路和高通支路以及金属通孔;三个输出端口由微带线构成,高通支路和低通支路由高阻抗线和平板电容构成,一端并联在一个公共端口并串联一个过渡结构,另外一端直接串联过渡结构;在过渡结构中,微带线馈线与内芯相连,在馈线两侧设计金属通孔,输出端口串联在过渡结构的末端;具有自封装特性,加工简单,在小型化的同时实现了低插损。

Figure 202211021512

A miniaturized low insertion loss duplexer, consisting of five layers of dielectric boards, from top to bottom are the first to fifth layers of dielectric boards, each layer of dielectric boards is coated with copper on both sides and designed with metal through holes. The air cavity is formed by removing the cuboid on the second and fourth layer dielectric boards. The circuit part is distributed on the upper and lower sides of the third layer dielectric board. The dielectric boards of each layer are pressed together by screws; the circuit part adopts the complementary duplex principle, including three three output ports, three transition structures, low-pass branches and high-pass branches, and metal vias; the three output ports are composed of microstrip lines, and the high-pass branch and low-pass branch are composed of high-impedance lines and plate capacitors, and one end is connected in parallel A transition structure is connected in series at one common port, and the transition structure is directly connected in series at the other end; in the transition structure, the microstrip feeder is connected to the inner core, metal vias are designed on both sides of the feeder line, and the output port is connected in series at the end of the transition structure; Self-encapsulation features, simple processing, low insertion loss while miniaturization.

Figure 202211021512

Description

一种小型化低插损双工器A miniaturized low insertion loss duplexer

技术领域technical field

本发明属于双工器技术领域,具体涉及一种小型化低插损双工器。The invention belongs to the technical field of duplexers, in particular to a miniaturized low insertion loss duplexer.

背景技术Background technique

双工器作为无线信号通讯系统的核心器件,能够实现对两个异频信号的合路或对单个宽频信号的两路频段分割,插入损耗与隔离度是衡量双工器性能的关键指标。目前常用的双工器的设计方法有环形器耦合型、公共端加消纳网络以及互补型双工器;其中环形器耦合型容易模块化,但环形器的引入导致电路的体积较大且工作带宽窄;公共端加消纳网络适合频带距离远且工作窄的情况;互补型双工器结构简单,但设计具有多个通道的多工器时十分复杂。As the core device of the wireless signal communication system, the duplexer can realize the combination of two different frequency signals or the division of two frequency bands for a single broadband signal. Insertion loss and isolation are the key indicators to measure the performance of the duplexer. At present, the commonly used duplexer design methods include circulator coupling type, common terminal plus absorbing network, and complementary duplexer; among them, the circulator coupling type is easy to be modularized, but the introduction of the circulator leads to a large circuit size and is difficult to operate. The bandwidth is narrow; the common end plus the absorptive network is suitable for the situation where the frequency band is far away and the work is narrow; the complementary duplexer has a simple structure, but it is very complicated to design a multiplexer with multiple channels.

双工器具体实现形式有介质双工器、同轴腔体双工器、波导双工器以及微带双工器,随着各领域实际应用尤其是5G通信技术的迅速发展,对电子系统的体积、重量和功耗的要求越来越高,人们寻求低插损、体积小的双工器的愿望也越来越迫切。The specific implementation forms of duplexers include dielectric duplexers, coaxial cavity duplexers, waveguide duplexers and microstrip duplexers. With the rapid development of practical applications in various fields, especially 5G communication technology, the electronic system The requirements for volume, weight and power consumption are getting higher and higher, and people's desire for duplexers with low insertion loss and small size is also becoming more and more urgent.

例如南京理工大学在其申请的名称为“平面微带双工器”(申请号201711304351.1,授权专利号CN 108183293 A)的发明专利,公开了一种平面微带双工器,平面微带双工器包括微带电路和双面铜的介质板,其中介质板采用介电常数3.3厚0.508mm的Rogers4533,微带电路包括:T型接头,高通滤波器、低通滤波器和两个输出端口;高通滤波器和低通滤波器都由微带短截线构成,其中高通滤波器各短截线通过金属通孔与地板连接构成短路短截线引入了磁耦合;两个滤波器的一端通过四分之一波长阻抗变换器并联在T型接头上,另外一端接输出端口;平面微带双工器具有结构简单,重量轻、体积小、带内插损小生产成本低等优点。For example, Nanjing University of Science and Technology has applied for an invention patent named "Planar Microstrip Duplexer" (Application No. 201711304351.1, Authorized Patent No. CN 108183293 A), which discloses a planar microstrip duplexer, a planar microstrip duplexer The device includes a microstrip circuit and a double-sided copper dielectric board. The dielectric board uses Rogers4533 with a dielectric constant of 3.3 and a thickness of 0.508mm. The microstrip circuit includes: a T-shaped connector, a high-pass filter, a low-pass filter and two output ports; Both the high-pass filter and the low-pass filter are composed of microstrip stubs, and the stubs of the high-pass filter are connected to the floor through metal through holes to form a short-circuit stub, which introduces magnetic coupling; one end of the two filters passes through four The one-wavelength impedance converter is connected in parallel to the T-shaped connector, and the other end is connected to the output port; the planar microstrip duplexer has the advantages of simple structure, light weight, small size, small in-band insertion loss and low production cost.

华南理工大学在其申请的名称为“同轴腔体双工器”(申请号201921176212.X,授权专利号CN 210430050 U)的发明,公开了一种同轴腔体双工器,同轴腔体双工器包括四个呈“凸”字形的谐振腔,分别为左侧的第一阶谐振腔、中间的第二阶谐振腔以及背部和右侧的第三阶谐振腔,各个谐振腔之间通过耦合谐振窗实现耦合,其中第一、二阶谐振腔具有双频特性,第三阶谐振腔为单频谐振腔;在第一、三阶谐振腔上有同轴馈电线作为输出端口,其内芯延伸至第一谐振腔的竖直金属圆柱以及第三阶谐振腔的谐振杆内,同轴腔体双工器具有结构紧凑、易于调谐、选择性好等优点。South China University of Technology disclosed a coaxial cavity duplexer in its application titled "Coaxial Cavity Duplexer" (Application No. 201921176212.X, Authorized Patent No. CN 210430050 U). The bulk duplexer includes four "convex" resonant cavities, which are the first-order resonant cavity on the left, the second-order resonant cavity in the middle, and the third-order resonant cavity on the back and the right. The coupling is realized through the coupling resonant window, in which the first and second resonant cavities have dual-frequency characteristics, and the third resonant cavity is a single-frequency resonant cavity; there are coaxial feeders on the first and third resonant cavities as output ports, Its inner core extends to the vertical metal cylinder of the first resonant cavity and the resonant rod of the third resonant cavity. The coaxial cavity duplexer has the advantages of compact structure, easy tuning, and good selectivity.

综上所述,如何实现小型化以及低插损一直是人们设计双工器的重点研究问题,平面微带双工器利用介电常数3.3的介质板减小体积,采用微带短截线设计滤波器来减小信号传输过程中的损耗,但由于微带线存在介质损耗以及辐射损耗,插入损耗还有进一步优化的空间,且该双工器覆盖的频段较窄,无法覆盖5G频段;同轴腔体通过利用公共谐振腔减少谐振腔的数目来减小体积,但是由于谐振腔尺寸必须与四分之一波长相比拟导致双工器总体尺寸偏大,且此结构覆盖带宽较窄。因此急需一款能在兼顾小型化低插损的同时还能覆盖5G频段的双工器应用到5G基站天线中。To sum up, how to achieve miniaturization and low insertion loss has always been a key research issue in the design of duplexers. The planar microstrip duplexer uses a dielectric plate with a dielectric constant of 3.3 to reduce the volume and adopts a microstrip stub design. filter to reduce the loss during signal transmission, but because of the dielectric loss and radiation loss of the microstrip line, there is still room for further optimization of the insertion loss, and the frequency band covered by the duplexer is narrow and cannot cover the 5G frequency band; The axial cavity reduces the volume by reducing the number of resonant cavities by using the common resonant cavity, but because the size of the resonant cavity must be compared with a quarter wavelength, the overall size of the duplexer is relatively large, and the structure covers a narrow bandwidth. Therefore, there is an urgent need for a duplexer that can cover the 5G frequency band while taking into account miniaturization and low insertion loss to be applied to the 5G base station antenna.

发明内容Contents of the invention

为了克服上述现有技术的缺点,本发明目的在于提出了一种小型化低插损双工器,具有自封装特性,加工简单,在小型化的同时实现了低插损。In order to overcome the above-mentioned shortcomings of the prior art, the object of the present invention is to propose a miniaturized low insertion loss duplexer, which has the characteristics of self-encapsulation, simple processing, and realizes low insertion loss while being miniaturized.

为了达到上述目的,本发明采取的技术方案为:In order to achieve the above object, the technical scheme that the present invention takes is:

一种小型化低插损双工器,基于介质集成悬置线(SISL)技术,由五层介质板构成,从上到下分别为第一层介质板1、第二层介质板2、第三层介质板3、第四层介质板4、第五层介质板5,每层介质板都双面覆铜且设计金属通孔保证接地良好,在第二层介质板2和第四层介质板4上除去大小相同的长方体并在两侧加金属包边构成空气腔,双工器电路部分分布在第三层介质板3的上下两侧,各层介质板通过螺钉压合在一起。A miniaturized low insertion loss duplexer, based on dielectric integrated suspension line (SISL) technology, consists of five layers of dielectric boards, from top to bottom are the first layer of dielectric board 1, the second layer of dielectric board 2, the second layer of dielectric board The three-layer dielectric board 3, the fourth-layer dielectric board 4, and the fifth-layer dielectric board 5. Each dielectric board is coated with copper on both sides and metal through holes are designed to ensure good grounding. The second-layer dielectric board 2 and the fourth-layer dielectric board The cuboids of the same size are removed from the board 4 and metal edging is added on both sides to form an air cavity. The duplexer circuit part is distributed on the upper and lower sides of the third layer of dielectric board 3, and the dielectric boards of each layer are pressed together by screws.

所述的双工器电路部分采用了互补双工的原理,包括三个输出端口、三个SISL到微带线的过渡结构、低通支路和高通支路以及金属通孔;三个输出端口由微带线构成,高通支路和低通支路由高阻抗线和平板电容构成,一端并联在一个公共端口并串联一个过渡结构,另外一端直接串联过渡结构;在过渡结构中,微带线馈线与SISL内芯相连,在馈线两侧设计金属通孔保证接地良好实现良好的匹配并防止产生谐振产生能量损耗,三个输出端口串联在过渡结构的末端。The duplexer circuit part adopts the principle of complementary duplexing, including three output ports, three transition structures from SISL to microstrip line, low-pass branch and high-pass branch, and metal vias; three output ports Composed of microstrip lines, the high-pass branch and low-pass branch are composed of high-impedance lines and plate capacitors, one end is connected in parallel to a common port and a transition structure is connected in series, and the other end is directly connected in series with the transition structure; in the transition structure, the microstrip feeder It is connected to the inner core of the SISL, and metal vias are designed on both sides of the feeder to ensure good grounding to achieve good matching and prevent resonance and energy loss. The three output ports are connected in series at the end of the transition structure.

所述的低通支路和高通支路在切比雪夫高低通滤波器的基础上,调整其某些电容电感值使得两个通道的电纳之和为0,电导在各自频段内为Y0,抵消频带之间的串扰,实现双工。The low-pass branch and the high-pass branch are based on the Chebyshev high-low pass filter, and some capacitance and inductance values are adjusted so that the sum of the susceptance of the two channels is 0, and the conductance is Y0 in the respective frequency bands , to cancel the crosstalk between frequency bands and achieve duplex.

低通支路中一个低通单元由两个串联的高阻抗线和一端并连接地的平板电容构成,其中平板电容的一面与高阻抗线相接,另外一面与地相接,通过调整电感和电容值实现低通效果;高通支路中一个高通单元则由两个串联的平板电容和一端并连接地的高阻抗线构成,通过调整电容电感值实现高通效果。A low-pass unit in the low-pass branch consists of two high-impedance lines in series and a plate capacitor connected to the ground at one end, where one side of the plate capacitor is connected to the high-impedance line and the other side is connected to the ground. By adjusting the inductance and The capacitance value realizes the low-pass effect; a high-pass unit in the high-pass branch circuit is composed of two series-connected plate capacitors and a high-impedance line connected to the ground at one end, and the high-pass effect is realized by adjusting the inductance value of the capacitor.

所述的第一层介质板1和第五层介质板5为厚度0.6mm、介电常数4.4的FR4,第二层介质板2和第四层介质板4为厚度2mm、介电常数4.4的FR4,第三层介质板3为厚度0.254mm、介电常数2.2的R5880;在第二层介质板2的下表面3个过渡结构处除去了大小相同的矩形防止馈线短路。The first layer of dielectric board 1 and the fifth layer of dielectric board 5 are FR4 with a thickness of 0.6 mm and a dielectric constant of 4.4, and the second layer of dielectric board 2 and the fourth layer of dielectric board 4 are FR4 with a thickness of 2 mm and a dielectric constant of 4.4 FR4, the third layer of dielectric board 3 is R5880 with a thickness of 0.254mm and a dielectric constant of 2.2; at the three transition structures on the lower surface of the second layer of dielectric board 2, rectangles of the same size are removed to prevent feeder short circuit.

本发明与现有技术相比具有以下优点:Compared with the prior art, the present invention has the following advantages:

本发明基于SISL结构,电磁波在内芯与金属壁之间的空气中传输,由于没有介质损耗,双工器可以实现通带内0.4dB以下的插入损耗。The invention is based on the SISL structure, electromagnetic waves are transmitted in the air between the inner core and the metal wall, and because there is no dielectric loss, the duplexer can realize the insertion loss below 0.4dB in the passband.

本发明通采用了互补双工器的原理,不含消纳网络,电路形式简单,容易实现。The invention adopts the principle of a complementary duplexer, does not contain a consumption network, has a simple circuit form, and is easy to realize.

本发明采用了短截线与平板电容的结构,用一小段高阻抗线代替电感,在0.254mm厚的介质板两侧覆铜构成平板电容,由于介质板薄,平板电容面积小,使得双工器容易实现小型化。The present invention adopts the structure of the stub line and the plate capacitor, replaces the inductance with a small section of high-impedance line, and clads copper on both sides of the 0.254mm thick dielectric plate to form the plate capacitor. Due to the thin dielectric plate and the small area of the plate capacitor, the duplex device can be easily miniaturized.

本发明SISL结构由五层PCB板压合组成,在端口处有SISL到微带线的过渡结构,使得本发明中的双工器容易与其它平面电路集成。The SISL structure of the present invention is composed of five layers of PCB boards, and there is a transition structure from the SISL to the microstrip line at the port, so that the duplexer in the present invention can be easily integrated with other planar circuits.

附图说明Description of drawings

图1为本发明介质集成悬置线(SISL)截面图。FIG. 1 is a cross-sectional view of a dielectric integrated suspension line (SISL) of the present invention.

图2为本发明双工器的等效电路图。Fig. 2 is an equivalent circuit diagram of the duplexer of the present invention.

图3为本发明双工器的低通支路中一个单元的平面参数图以及其等效电路图。Fig. 3 is a plane parameter diagram and an equivalent circuit diagram of a unit in the low-pass branch of the duplexer of the present invention.

图4为本发明双工器的高通支路中一个单元的平面参数图以及其等效电路图。FIG. 4 is a plane parameter diagram and an equivalent circuit diagram of a unit in the high-pass branch of the duplexer of the present invention.

图5为本发明第三层介质板3的平面图。FIG. 5 is a plan view of the third-layer dielectric board 3 of the present invention.

图6为本发明小型化低插损双工器的分层图。Fig. 6 is a layered diagram of the miniaturized low insertion loss duplexer of the present invention.

图7为本发明两个输出端口的插入损耗仿真结果图。Fig. 7 is a graph showing the insertion loss simulation results of two output ports of the present invention.

图8为本发明输入端口的回波损耗仿真结果图。Fig. 8 is a graph showing the return loss simulation result of the input port of the present invention.

图9为本发明的实物图。Fig. 9 is a physical diagram of the present invention.

图10为本发明两个输出端口的插入损耗实测结果图。Fig. 10 is a diagram of actual measurement results of insertion loss of two output ports of the present invention.

具体实施方式Detailed ways

以下结合附图和实施例对本发明的技术方案做进一步详细说明。The technical solutions of the present invention will be described in further detail below in conjunction with the accompanying drawings and embodiments.

参照图1,一种小型化低插损双工器,基于SISL结构,由五层介质板构成,从上到下分别为第一层介质板1、第二层介质板2、第三层介质板3、第四层介质板4、第五层介质板5,每层介质板都双面覆铜且设计金属通孔保证接地良好,在第二层介质板2和第四层介质板4上除去大小相同的长方体并在两侧加金属包边构成空气腔,双工器电路部分分布在第三层介质板3的上下两侧,各层介质板通过螺钉压合在一起,由于大部分电磁波分布在空气而不是介质中,可以实现高Q值和极低的插入损耗,此外该结构还能实现有效的电磁屏蔽,防止由散射引起的互相干扰,具有自封装特性。Referring to Figure 1, a miniaturized low insertion loss duplexer, based on the SISL structure, consists of five dielectric boards, from top to bottom are the first dielectric board 1, the second dielectric board 2, and the third dielectric board Board 3, the fourth layer of dielectric board 4, and the fifth layer of dielectric board 5, each layer of dielectric board is coated with copper on both sides and the metal through hole is designed to ensure good grounding, on the second layer of dielectric board 2 and the fourth layer of dielectric board 4 Remove the cuboids of the same size and add metal edging on both sides to form an air cavity. The duplexer circuit part is distributed on the upper and lower sides of the third layer of dielectric board 3. The dielectric boards of each layer are pressed together by screws. Due to most electromagnetic waves Distributed in the air instead of the medium, it can achieve high Q value and extremely low insertion loss. In addition, the structure can also realize effective electromagnetic shielding, prevent mutual interference caused by scattering, and have self-encapsulation characteristics.

如图2所示,所述的双工器电路部分由低通支路和高通支路并联在公共端口构成,在切比雪夫高低通滤波器的基础上,调整其某些电容电感值使得两个通道的电纳之和为0,电导在各自频段内为Y0,从而抵消频带之间的串扰,实现双工。As shown in Figure 2, the duplexer circuit part is composed of a low-pass branch and a high-pass branch connected in parallel at a common port. The sum of the susceptance of each channel is 0, and the conductance is Y 0 in each frequency band, so as to cancel the crosstalk between frequency bands and realize duplexing.

参照图3与图4,图中阴影部分为介质板背面覆铜,所述的双工器电路部分由高阻抗线和平板电容搭建,其中一个低通单元由两个串联的高阻抗线和一端并连接地的平板电容构成,其中平板电容的一面与高阻抗线相接,另外一面与地相接,通过调整低通单元高阻抗线的长度LLl、低通单元高阻抗线的宽度LLw以及低通单元平板电容的长度LCl、低通单元平板电容的宽度LCw可以得到适合的电感和电容值从而实现低通效果;而一个高通单元则由两个串联的平板电容和一端并连接地的高阻抗线构成,通过调整高通单元高阻抗线的长度HLl、高通单元高阻抗线的宽度HLw以及高通单元平板电容的长度HCl、高通单元平板电容的宽度HCw可以得到合适的电容电感值从而实现高通效果。Referring to Fig. 3 and Fig. 4, the shaded part in the figure is copper cladding on the back of the dielectric board, and the duplexer circuit part is constructed by high-impedance lines and plate capacitors, and one low-pass unit is composed of two series-connected high-impedance lines and one end and connected to the ground plate capacitor, wherein one side of the plate capacitor is connected to the high-impedance line, and the other side is connected to the ground. By adjusting the length LLl of the high-impedance line of the low-pass unit, the width LLw of the high-impedance line of the low-pass unit, and the low-pass unit The length LCl of the plate capacitor of the pass unit and the width LCw of the plate capacitor of the low-pass unit can obtain suitable inductance and capacitance values to achieve the low-pass effect; while a high-pass unit consists of two plate capacitors in series and a high impedance connected to the ground at one end By adjusting the length HL1 of the high-impedance line of the high-pass unit, the width HLw of the high-impedance line of the high-pass unit, the length HCl of the plate capacitor of the high-pass unit, and the width HCw of the plate capacitor of the high-pass unit, an appropriate capacitance and inductance value can be obtained to achieve the high-pass effect.

如图5所示,图5为的第三层介质板3的平面图,阴影部分为介质板背面覆铜(除电路部分外背面全部覆铜,图5没有给出),一种小型化低插损双工器包括三个输出端口、三个微带线到SISL的过渡结构、低通支路和高通支路以及金属通孔SH、SH1和GH、GH1;其中,高通支路和低通支路一端并联在一个公共端口,另外一端分别串联一个SISL到微带线的过渡结构,在微带线两侧设计金属通孔GH和GH1,其中GH可以实现良好的接地使得微带线到SISL匹配良好,GH1可以减小微带线的介质损耗;三个输出端口串联在三个过渡结构处,在微带线的馈线末端串联一个焊盘,并在焊盘两侧去掉部分覆铜来与SMA相接;最后用螺钉通过金属通孔SH1和SH压合五层介质板。As shown in Figure 5, Figure 5 is a plan view of the third layer of dielectric board 3, the shaded part is copper clad on the back of the dielectric board (all copper clad on the back except the circuit part, which is not shown in Figure 5), a miniaturized low insertion The lossy duplexer includes three output ports, three transition structures from microstrip lines to SISL, low-pass branch and high-pass branch, and metal vias SH, SH1 and GH, GH1; among them, the high-pass branch and the low-pass branch One end of the road is connected in parallel to a common port, and the other end is connected in series with a transition structure from SISL to microstrip line. Metal vias GH and GH1 are designed on both sides of the microstrip line. GH can achieve good grounding and match the microstrip line to SISL. Good, GH1 can reduce the dielectric loss of the microstrip line; the three output ports are connected in series at the three transition structures, a pad is connected in series at the end of the feeder line of the microstrip line, and part of the copper on both sides of the pad is removed to match the SMA Connecting; finally, use screws to press the five-layer dielectric board through the metal through-holes SH1 and SH.

参照图6,一种小型化低插损双工器由五层介质板构成,第一层介质板1和第五层介质板5为厚度0.6mm、介电常数4.4的FR4,第二层介质板2和第四层介质板4为厚度2mm、介电常数4.4的FR4,第三层介质板3为厚度0.254mm、介电常数2.2的R5880;需要注意在第二层介质板2的下表面3个过渡结构处除去了大小相同的矩形防止馈线短路。Referring to Figure 6, a miniaturized low insertion loss duplexer is composed of five dielectric boards, the first dielectric board 1 and the fifth dielectric board 5 are FR4 with a thickness of 0.6 mm and a dielectric constant of 4.4, and the second dielectric board Board 2 and the fourth layer of dielectric board 4 are FR4 with a thickness of 2mm and a dielectric constant of 4.4, and the third layer of dielectric board 3 is R5880 with a thickness of 0.254mm and a dielectric constant of 2.2; it should be noted that the lower surface of the second layer of dielectric board 2 Rectangles of the same size are removed from the three transition structures to prevent feeder short circuit.

参照图7和图8,图7为本发明一种小型化低插损双工器的插入损耗的仿真结果图,在0.69GHz-2.69GHz以及3.3GHz-5GHz两个通带内插入损耗小于0.4dB;图8为本发明回波损耗仿真结果图,通带内回波损耗小于-15dB。Referring to Fig. 7 and Fig. 8, Fig. 7 is a simulation result diagram of the insertion loss of a miniaturized low insertion loss duplexer of the present invention, and the insertion loss in the two passbands of 0.69GHz-2.69GHz and 3.3GHz-5GHz is less than 0.4 dB; Fig. 8 is a return loss simulation result diagram of the present invention, and the return loss in the passband is less than -15dB.

参照图9和图10,图9为本发明一种小型化低插损双工器的实物图,图10为其插入损耗的实测结果,且该损耗包括用于连接的SMA接头的损耗,其中0.69GHz-2.69GHz频带内插损小于0.4dB,3.3GHz-5GHz频带内插损小于0.5dB,包含SMA接头在高频带来的0.1dB左右的损耗。Referring to Fig. 9 and Fig. 10, Fig. 9 is a physical diagram of a miniaturized low insertion loss duplexer of the present invention, Fig. 10 is the measured result of its insertion loss, and the loss includes the loss of the SMA connector used for connection, wherein The insertion loss in the 0.69GHz-2.69GHz frequency band is less than 0.4dB, and the insertion loss in the 3.3GHz-5GHz frequency band is less than 0.5dB, including the loss of about 0.1dB caused by the SMA connector at high frequencies.

Claims (3)

1. The utility model provides a miniaturized low insertion loss duplexer which characterized in that: based on a medium integrated suspension line (SISL) technology, the high-voltage and high-voltage integrated circuit is composed of five layers of dielectric plates, namely a first layer of dielectric plate (1), a second layer of dielectric plate (2), a third layer of dielectric plate (3), a fourth layer of dielectric plate (4) and a fifth layer of dielectric plate (5) from top to bottom, wherein two sides of each layer of dielectric plate are coated with copper, metal through holes are designed to ensure good grounding, cuboids with the same size are removed from the second layer of dielectric plate (2) and the fourth layer of dielectric plate (4), metal edges are added on two sides of each dielectric plate to form an air cavity, a duplexer circuit part is distributed on the upper side and the lower side of the third layer of dielectric plate (3), and each layer of dielectric plates are pressed together through screws;
the duplexer circuit part adopts the principle of complementary duplex and comprises three output ports, three transition structures from SISL to microstrip lines, a low-pass branch, a high-pass branch and a metal through hole; the three output ports are formed by microstrip lines, the high-pass branch and the low-pass branch are formed by high-impedance lines and flat capacitors, one end of each high-pass branch is connected in parallel with a common port and is connected in series with a transition structure, and the other end of each high-pass branch is directly connected in series with the transition structure; in the transition structure, a microstrip line feeder is connected with a SISL inner core, metal through holes are designed on two sides of the feeder to ensure good grounding, good matching is realized, and energy loss caused by resonance is prevented from being generated;
the low-pass branch and the high-pass branch adjust capacitance inductance values of the two channels to enable the sum of susceptances of the two channels to be 0 and the conductance to be Y0 in respective frequency bands on the basis of the Chebyshev high-low-pass filter, so that crosstalk between frequency bands is counteracted, and duplex is realized.
2. The miniaturized low-insertion-loss duplexer of claim 1, wherein: one low-pass unit in the low-pass branch circuit is composed of a high-impedance line and a flat capacitor, wherein the two ends of the flat capacitor are connected in series and the two ends of the flat capacitor are connected in parallel and are grounded, one surface of the flat capacitor is connected with the high-impedance line, the other surface of the flat capacitor is connected with the ground, and the low-pass effect is realized by adjusting the inductance capacitance value; and one high-pass unit in the high-pass branch consists of two serially connected plate capacitors and a high-impedance line with one end connected in parallel and grounded, and the high-pass effect is realized by adjusting the inductance value of the capacitors.
3. The miniaturized low-insertion-loss duplexer of claim 1, wherein: the first layer of dielectric plate (1) and the fifth layer of dielectric plate (5) are FR4 with the thickness of 0.6mm and the dielectric constant of 4.4, the second layer of dielectric plate (2) and the fourth layer of dielectric plate (4) are FR4 with the thickness of 2mm and the dielectric constant of 4.4, and the third layer of dielectric plate (3) is R5880 with the thickness of 0.254mm and the dielectric constant of 2.2; the rectangles with the same size are removed at the 3 transition structures on the lower surface of the second layer dielectric plate (2) to prevent the short circuit of the feeder line.
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