CN115254812B - Cleaning device for removing oxide in exhaust pipeline and single crystal furnace - Google Patents
Cleaning device for removing oxide in exhaust pipeline and single crystal furnace Download PDFInfo
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- CN115254812B CN115254812B CN202210770689.0A CN202210770689A CN115254812B CN 115254812 B CN115254812 B CN 115254812B CN 202210770689 A CN202210770689 A CN 202210770689A CN 115254812 B CN115254812 B CN 115254812B
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- 238000004140 cleaning Methods 0.000 title claims abstract description 148
- 239000013078 crystal Substances 0.000 title claims abstract description 62
- 238000001816 cooling Methods 0.000 claims description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- 230000003247 decreasing effect Effects 0.000 claims description 2
- 239000007787 solid Substances 0.000 description 17
- 230000000694 effects Effects 0.000 description 15
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 12
- 229910052760 oxygen Inorganic materials 0.000 description 12
- 239000001301 oxygen Substances 0.000 description 12
- 238000000034 method Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000009825 accumulation Methods 0.000 description 6
- 230000000903 blocking effect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000010926 purge Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B9/00—Cleaning hollow articles by methods or apparatus specially adapted thereto
- B08B9/02—Cleaning pipes or tubes or systems of pipes or tubes
- B08B9/027—Cleaning the internal surfaces; Removal of blockages
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B2209/00—Details of machines or methods for cleaning hollow articles
- B08B2209/02—Details of apparatuses or methods for cleaning pipes or tubes
- B08B2209/027—Details of apparatuses or methods for cleaning pipes or tubes for cleaning the internal surfaces
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The application discloses a cleaning device for removing oxides in an exhaust pipeline and a single crystal furnace, and relates to the technical field of photovoltaics, wherein the cleaning device is arranged in the exhaust pipeline, an air guide device is arranged in the exhaust pipeline, and the cleaning device is arranged below the air guide device; the cleaning device includes: the bearing structure is arranged on the pipe wall of the exhaust pipeline; and the cleaning structure is connected with the bearing structure and is used for dispersing the oxide in a mode of disturbing air flow, and the diameter of the cleaning structure is smaller than that of the exhaust pipeline. The device is used for removing oxides in the exhaust pipeline by utilizing air flow, so that the normal operation of the single crystal furnace is ensured.
Description
Technical Field
The application relates to the technical field of photovoltaics, and more particularly relates to a cleaning device for removing oxides in an exhaust pipeline and a single crystal furnace.
Background
The vertical pulling method is a common method for producing monocrystalline silicon rods on a large scale, and the main equipment is a monocrystalline furnace.
During the process of pulling the ingot, a large amount of oxide is generated in the single crystal furnace and is generally discharged through an exhaust pipeline at the bottom of the furnace. Because the exhaust pipeline at the bottom of the furnace is provided with a water-cooling structure, when the crystal bar is pulled for a long time, oxides discharged from the exhaust pipeline are easy to solidify at the water-cooling position, the exhaust pipeline is blocked, the frequency of a vacuum pump is increased, and the furnace pressure is increased when the frequency is severe, so that the quality and the single yield of the crystal bar are affected.
Disclosure of Invention
In view of this, the application provides a cleaning device and single crystal growing furnace for cleaing away the oxide in the exhaust duct for utilize the air current to cleaing away the oxide in the exhaust duct, guarantee single crystal growing furnace's normal operating.
In a first aspect, the present application provides a cleaning device for cleaning oxide in an exhaust pipe, where the cleaning device is disposed in the exhaust pipe, and an air guide device is disposed in the exhaust pipe, and the cleaning device is disposed below the air guide device; the cleaning device includes:
the bearing structure is arranged on the pipe wall of the exhaust pipeline;
the cleaning structure is connected with the bearing structure and used for dispersing oxides in a mode of disturbing air flow, and the diameter of the cleaning structure is smaller than that of the exhaust pipeline.
Optionally, wherein:
the air guide device is an air guide device with the diameter gradually reduced from top to bottom; the distance between the cleaning device and the air guide device is 20 mm-40 mm.
Optionally, wherein:
the bearing structure is fixed on the exhaust pipeline; or, the bearing structure is detachably connected with the exhaust pipeline.
Optionally, wherein:
when bearing structure and exhaust duct detachable connection, exhaust duct still includes a plurality of locating parts that distribute in proper order, and bearing structure passes through locating part and exhaust duct detachable connection.
Optionally, wherein:
the bearing structure is a bearing structure with a combined structure or an integrated bearing structure; the bearing structure is provided with a hollow for conducting air flow, and the cleaning structure is connected to a position where the bearing structure is not provided with the hollow.
Optionally, wherein:
the cleaning structure comprises a rotating assembly and a guide structure positioned at the rotating shaft of the rotating assembly, the guide structure is provided with a first end and a second end which are opposite, the first end is fixedly connected with the bearing structure, and the second end is fixedly connected with the rotating assembly; or alternatively, the first and second heat exchangers may be,
the cleaning structure comprises a rotating assembly and a guide structure positioned at the rotating shaft of the rotating assembly, the guide structure is provided with a first end and a second end which are opposite, the first end is fixedly connected with the bearing structure, the second end is positioned below the rotating assembly, and the rotating assembly is in sliding connection with the guide structure.
Optionally, wherein:
the cleaning structure further comprises a first limiting piece and a second limiting piece, the first limiting piece is arranged at the first end of the guiding structure, and the second limiting piece is arranged at the second end of the guiding structure.
Optionally, wherein:
the rotating assembly comprises a connecting piece and a plurality of rotating pieces arranged on the connecting piece, wherein the connecting piece is used for connecting the rotating pieces and the guiding structure, so that each rotating piece can rotate around the guiding structure.
Optionally, wherein:
the extending surface of each rotating piece is obliquely intersected with the extending direction of the guide structure.
In a second aspect, the application further provides a single crystal furnace, which comprises a cleaning device located at the water cooling area of the exhaust pipeline in the single crystal furnace, wherein the cleaning device is the cleaning device for cleaning oxide in the exhaust pipeline in the first aspect.
Compared with the prior art, the cleaning device for removing the oxide in the exhaust pipeline and the single crystal furnace provided by the application have the advantages that at least the following effects are realized:
the application provides a cleaning device and single crystal growing furnace for cleaing away oxide in exhaust duct, cleaning device establishes the air guide device below in exhaust duct for clear up from exhaust duct in discharge and block up the oxide in the air guide device below easily. The cleaning device comprises a bearing structure and a cleaning structure which are connected with each other, wherein the bearing structure is arranged on the pipe wall of the exhaust pipeline and is used for bearing and supporting the cleaning structure, so that the cleaning structure can stably run; the diameter of the cleaning structure is smaller than that of the exhaust pipeline, so that the cleaning structure can normally operate in the exhaust pipeline, oxides blocking below the air guide device are dispersed by the cleaning structure in a mode of disturbing air flow, and the dispersed oxides are not accumulated below the air guide device and are discharged along with the exhaust pipeline. Therefore, by adopting the cleaning device for cleaning the oxide in the exhaust pipeline and the single crystal furnace, the oxide blocked below the air guide device can be cleaned, and meanwhile, the accumulation of the oxide is avoided, so that the furnace pressure of the single crystal furnace is reduced, and the normal operation of the single crystal furnace is ensured.
Of course, it is not necessary for any of the products of the present application to be specifically required to achieve all of the technical effects described above at the same time.
Other features of the present application and its advantages will become apparent from the following detailed description of exemplary embodiments of the present application, which proceeds with reference to the accompanying drawings.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments of the application and together with the description, serve to explain the principles of the application.
FIG. 1 is a schematic diagram of a single crystal furnace according to the prior art;
fig. 2 is a schematic structural diagram of a cleaning device according to an embodiment of the present disclosure;
FIG. 3 is a schematic view of a single crystal furnace with a cleaning device according to an embodiment of the present disclosure;
fig. 4 is a top view of a cleaning device in a single crystal furnace according to an embodiment of the present disclosure.
Detailed Description
Various exemplary embodiments of the present application will now be described in detail with reference to the accompanying drawings. It should be noted that: the relative arrangement of the components and steps, numerical expressions and numerical values set forth in these embodiments do not limit the scope of the present application unless it is specifically stated otherwise.
The following description of at least one exemplary embodiment is merely exemplary in nature and is in no way intended to limit the application, its application, or uses.
Techniques, methods, and apparatus known to one of ordinary skill in the relevant art may not be discussed in detail, but are intended to be part of the specification where appropriate.
In all examples shown and discussed herein, any specific values should be construed as merely illustrative, and not a limitation. Thus, other examples of exemplary embodiments may have different values.
It should be noted that: like reference numerals and letters denote like items in the following figures, and thus once an item is defined in one figure, no further discussion thereof is necessary in subsequent figures.
The vertical pulling method is a common method for producing monocrystalline silicon rods on a large scale, and the main equipment is a monocrystalline furnace.
Fig. 1 is a schematic diagram of a prior art single crystal furnace, and as shown in fig. 1, a large amount of oxide is generated in the single crystal furnace 1 during the process of pulling a crystal ingot, and is generally discharged through an exhaust pipe 10 at the bottom of the furnace. With the development of the crystal pulling technology, since the water cooling area 12 is arranged at the extruding pipeline at the bottom of the furnace, when the crystal bar is pulled for a long time, the oxide discharged from the exhaust pipeline 10 is easily solidified at the position of the water cooling area 12, so that the exhaust pipeline 10 is blocked, the frequency of the vacuum pump is increased, and when the frequency of the vacuum pump is increased, the furnace pressure is increased, so that the quality and the unit yield of the crystal bar are affected.
Fig. 2 is a schematic structural diagram of a cleaning device according to an embodiment of the present disclosure; FIG. 3 is a schematic view of a single crystal furnace with a cleaning device according to an embodiment of the present disclosure; fig. 4 is a top view of a cleaning device in a single crystal furnace according to an embodiment of the present disclosure.
In order to solve the above technical problems, as shown in fig. 2 to 4, the present application proposes a cleaning device 2 for cleaning oxide in an exhaust pipe 10 and a single crystal furnace 1, which are used for cleaning oxide in the exhaust pipe 10 by using airflow, so as to ensure the normal operation of the single crystal furnace 1.
As shown in fig. 2 to 4, the present application provides a cleaning device 2 for cleaning oxide in an exhaust pipe 10, wherein the cleaning device 2 is disposed in the exhaust pipe 10, an air guide device 11 is disposed in the exhaust pipe 10, and the cleaning device 2 is disposed below the air guide device 11; the cleaning device 2 includes:
a carrying structure 21, the carrying structure 21 being mounted on the wall of the exhaust duct 10;
and a cleaning structure 22, the cleaning structure 22 is connected with the bearing structure 21 and is used for dispersing oxide by means of disturbing air flow, and the diameter of the cleaning structure 22 is smaller than that of the exhaust pipeline 10.
In the specific implementation, as shown in fig. 2 to 4, the bearing structure 21 is installed on the pipe wall of the exhaust pipe 10, the cleaning structure 22 is connected with the bearing structure 21, and along with the air flow generated by the vacuum pump, the cleaning structure 22 is driven to operate in the exhaust pipe 10 by the air flow, so as to disperse and remove the solid oxide accumulated below the air guide device 11 in the exhaust pipe 10.
As shown in fig. 2 to 4, since a large amount of oxide is generated in the single crystal furnace 1 during the production process and is discharged along with the exhaust pipe 10, and after the air guide device 11 is installed in the exhaust pipe 10, the oxide is easily accumulated below the air guide device 11, and even blocks the air guide device 11, so that the production of the crystal bars is seriously affected. Based on this, the cleaning device 2 provided in the embodiment of the present application is disposed below the air guide device 11 in the exhaust duct 10, so that oxides that are discharged from the exhaust duct 10 and are easily blocked below the air guide device 11 can be cleaned. The cleaning device 2 comprises a bearing structure 21 and a cleaning structure 22 which are connected with each other, wherein the bearing structure 21 is arranged on the pipe wall of the exhaust pipeline 10 and is used for bearing the cleaning structure 22 and fixing the cleaning structure 22 in the exhaust pipeline 10, so that the cleaning structure 22 can stably run in the exhaust pipeline 10, poor cleaning effect and the like caused by shaking of the cleaning structure 22 during running are avoided; the diameter of the purge structure 22 is smaller than the diameter of the exhaust duct 10 so that the purge structure 22 can operate normally in the exhaust duct 10 without coming into contact with the exhaust duct 10; the cleaning structure 22 starts to operate under the driving of the air flow generated by the vacuum pump, and disperses the oxide blocked below the air guide device 11 by disturbing the air flow, so that the dispersed oxide is not accumulated below the air guide device 11 any more and can be discharged along with the exhaust pipeline 10. Therefore, the cleaning device 2 for cleaning the oxide in the exhaust pipeline 10 and the single crystal furnace 1 provided by the embodiment of the application can clean the solid oxide blocked below the air guide device 11, meanwhile, the accumulation of the solid oxide is avoided, the influence on the frequency of the vacuum pump is reduced, the furnace pressure of the single crystal furnace 1 is further reduced, the normal operation of the single crystal furnace 1 is ensured, and meanwhile, the problems of poor crystal bar yield and quality and the like caused by overhigh furnace pressure are avoided. In addition, the cleaning device 2 provided by the embodiment of the application utilizes airflow disturbance to clean solid oxide, does not need to additionally arrange driving equipment, and the utilized vacuum pump is also the vacuum pump of the original single crystal furnace 1, so that the cost and the energy consumption are not additionally increased, and the cleaning device is environment-friendly and simple to operate.
In some alternative embodiments of the present application, as shown in fig. 2-4, the air guide 11 is an air guide 11 with a gradually decreasing diameter from top to bottom; the distance between the cleaning device 2 and the air guide device 11 is 20 mm-40 mm.
Based on this, as shown in fig. 2 to 4, when the air guide device 11 is the air guide device 11 with gradually reduced diameter from top to bottom, the air guide device 11 is arranged in the exhaust pipeline 10 at the bottom of the single crystal furnace 1, in the production process of the single crystal furnace 1, more oxygen can be left in the single crystal furnace 1 by the air guide device 11 with gradually reduced diameter from top to bottom, so that vortex is formed, meanwhile, the stay time of the oxygen in the single crystal furnace 1 is longer, the heat taken away is reduced, the heat preservation effect is played on the single crystal furnace 1, the pulling power of the pulling stage can be reduced by 1kw to 1.5kw by matching with the OCZ feeding adopted at present, and the seeding effect can be better controlled. But simultaneously, because the diameter of the air guide device 11 gradually decreases from top to bottom, oxides are also more easily accumulated below the air guide device 11, and further the blockage of the air guide device 11 and the exhaust pipeline 10 is caused. When the distance between the cleaning device 2 and the air guide device 11 is 20 mm-40 mm, the cleaning effect of the cleaning device 2 is good, and if the distance between the cleaning device 2 and the air guide device 11 is smaller than 20mm, the distance between the cleaning device 2 and the air guide device 11 is too close, the cleaning device 2 can be blocked below the air guide device 11 directly, and more serious blocking is possibly caused; if the distance between the cleaning device 2 and the air guide device 11 is greater than 40mm, the distance between the cleaning device 2 and the air guide device 11 is too long, the cleaning device 2 cannot timely clean the solid oxide or the cleaning effect is poor, and the oxide still accumulates below the air guide device 11.
By way of example, as shown in fig. 3, the distance between the cleaning device 2 and the air guiding device 11 may be 20mm, 25mm, 30mm, 35mm, 40mm, etc., which is only by way of example and not limitation.
In some examples, as shown in fig. 3, a plurality of cleaning devices 2 may be sequentially disposed below the air guide device 11 in the exhaust duct 10 along the flow direction 3 of oxygen, or additional cleaning devices 2 may be disposed in the remaining places in the exhaust duct 10 where oxides are easily deposited, so as to further prevent the deposition of solid oxides.
Illustratively, the air guide 11 may be a tapered air guide as shown in fig. 3, the diameter of which gradually decreases from top to bottom.
In some alternative embodiments of the present application, as shown in fig. 2-4, the load bearing structure 21 is secured to the exhaust duct 10; alternatively, the carrier structure 21 is detachably connected to the exhaust duct 10. The bearing structure 21 is mainly used for being connected with the cleaning structure 22 to realize bearing function, and the cleaning structure 22 is fixed in the exhaust pipeline 10 to ensure the stable operation of the cleaning structure 22 in the exhaust pipeline 10. The bearing structure 21 can be fixedly connected with the exhaust pipeline 10, so that the connection between the bearing structure 21 and the exhaust pipeline 10 is firmer, and the bearing structure 21 and the exhaust pipeline 10 can be detachably connected because more oxide needs to be discharged in the single crystal furnace 1, and the situation such as abrasion or oxide accumulation can be easily generated in the cleaning structure 22 in the process of continuously cleaning the cleaning device 2, so that the whole cleaning device 2 can be conveniently taken out for cleaning or replacing parts.
For example, when the bearing structure is fixedly connected to the exhaust pipe, the bearing structure may be welded, which is merely exemplary and not particularly limited herein.
In some examples, as shown in fig. 2-4, when the carrying structure 21 is detachably connected to the exhaust duct 10, the exhaust duct 10 further includes a plurality of sequentially distributed limiting members, and the carrying structure 21 is detachably connected to the exhaust duct 10 through the limiting members.
Based on this, as shown in fig. 2 to 4, when the bearing structure 21 is detachably connected with the exhaust pipe 10, a plurality of limiting members may be disposed in the exhaust pipe 10, and these limiting members are sequentially distributed on the inner wall of the pipe along the flow direction 3 of oxygen in the exhaust pipe 10, and the bearing structure 21 may be detachably connected with the exhaust pipe 10 through the limiting members, and since the limiting members are distributed in a plurality of the flow directions 3 of oxygen in the exhaust pipe 10, the bearing structure 21 may be detachably connected with the limiting members in different positions, and the plurality of sequentially distributed limiting members enable the position of the cleaning device 2 to be adjusted in a plurality of gears, and meanwhile, the detachable connection between the limiting members and the bearing structure 21 facilitates the change of the position of the cleaning device 2 in the exhaust pipe 10.
It will be appreciated that, as shown in fig. 2 to 4, in order to make the carrying structure 21 more stable in the exhaust duct 10, the number of limiting members in direct contact with the carrying structure 21 is preferably a plurality, for example two, three, four, etc., and that a plurality of sets of limiting members may be sequentially distributed in the exhaust duct 10 along the flow direction 3 of oxygen. The number of the limiting members is merely exemplified herein, and is not particularly limited.
The detachable connection between the limiting member and the exhaust pipe may be a bolt connection or a buckle connection, or may be a notch which is directly arranged in the exhaust pipe and is convenient for the clamping connection of the bearing structure, which is merely illustrative and not particularly limited. Wherein, the preferred detachable connection mode is buckle connection, and the locating part of this moment is buckle form promptly, compares with bolted connection, and buckle connection is more convenient to detach, and has stability than with the direct joint of opening.
In some alternative embodiments of the present application, as shown in fig. 2-4, the load bearing structure 21 is a load bearing structure 21 or a unitary load bearing structure 21 having a combined structure; the bearing structure 21 is provided with a hollow for conducting air flow, and the cleaning structure 22 is connected to a position where the bearing structure 21 is not provided with the hollow.
Based on this, as shown in fig. 2 to 4, in order to enable oxygen to circulate in the single crystal furnace 1, the bearing structure 21 is provided with a hollow for conducting air flow, the solid oxide is also discharged from the hollow into the exhaust pipe 10, and the cleaning structure 22 is connected to a position where the bearing structure 21 does not have a hollow. It will be appreciated that the larger the hollow-out position of the carrying structure 21, the more oxygen is allowed to be conducted and the solid oxide can be discharged, the more disturbance of the oxygen to the cleaning structure 22 is increased, and the faster the cleaning structure 22 cleans the oxide, so the larger the hollow-out of the carrying structure 21 is. The bearing structure 21 can be an integral structure, the bearing structure 21 has the same size as the inner diameter of the exhaust pipe 10, and the integral bearing structure 21 has hollowed-out parts, which have good stability, but less hollowed-out parts, so that oxides are easy to block on the bearing structure 21. The bearing structure 21 may also be a bearing structure 21 with a combined structure, and the bearing structure 21 is formed by combining at least one sub-bearing structure 21, so that more hollow positions are provided, and accumulated solid oxides can be cleaned better.
By way of example, a preferred carrier structure 21 may have only two sub-carrier structures 21, the two sub-carrier structures 21 intersecting in an X-shape; more preferably, the carrying structure 21 may have only one sub-carrying structure 21 as shown in fig. 2 to 4, so that the hollowed-out position is maximized, and the best cleaning effect of the solid oxide is achieved.
It will be appreciated that when the particular configuration of the support structure 21 does not result in oxide build-up, as shown in fig. 2-4, the support structure 21 may be above the purge structure 22, as shown in fig. 3, or may be mounted below the purge structure 22.
In some alternative embodiments of the present application, as shown in fig. 2-4, the cleaning structure 22 includes a rotating assembly 221 and a guiding structure 222 located at a rotation axis of the rotating assembly 221, the guiding structure 222 having opposite first and second ends, the first end being fixedly connected to the bearing structure 21, the second end being fixedly connected to the rotating assembly 221; or alternatively, the first and second heat exchangers may be,
the cleaning structure 22 includes a rotating assembly 221 and a guiding structure 222 disposed at a rotation axis of the rotating assembly 221, wherein the guiding structure 222 has a first end and a second end opposite to each other, the first end is fixedly connected with the bearing structure 21, the second end is disposed below the rotating assembly 221, and the rotating assembly 221 is slidably connected with the guiding structure 222.
Based on this, as shown in fig. 2 to 4, the cleaning structure 22 includes a rotating component 221 for cleaning solid oxide in a rotating manner, and a guiding structure 222 located at a rotating shaft of the rotating component 221 is used for guiding the rotating component 221, so that the rotating component 221 only rotates on the guiding structure 222, and is not prone to swaying in other directions in the exhaust duct 10, and damage to the exhaust duct 10 or the rotating component 221 itself is avoided. The guiding structure 222 has a first end and a second end opposite to each other, and when the first end is fixedly connected with the bearing structure 21 and the second end is fixedly connected with the rotating assembly 221, the rotating assembly 221 is fixed to rotate on the second end of the guiding structure 222, so that the rotating assembly 221 is more stable; when the first end is fixedly connected with the bearing structure 21, the second end is located below the rotating component 221, and when the rotating component 221 is slidably connected with the guiding structure 222, the rotating component 221 can float back and forth in the extending direction of the guiding structure 222 under the action of the air flow provided by the vacuum pump, so that the rotating component 221 can clean the solid oxide within the length range of the guiding structure 222, the cleaned oxide is larger in range and more thorough, and the cleaning effect is better. In addition, OCZ Czochralski crystal (Outter Czochralski) is a next generation external multi-feed single crystal pulling technique, wherein a Czochralski crystal furnace is adopted, after each section of pulling is completed, external equipment adds silicon material into the furnace, and 8-10 crystal rod pulling can be completed within the life cycle allowed by the crucible. Currently, the main current application in the industry is RCz multi-pulling technology (Recharged Czochralski), and compared with the technology, OCZ has higher unit yield and higher melting efficiency; when the single crystal furnace 1 is used for OCZ charging, the frequency of the dry pump can be increased during charging, so that the rotating component 221 which returns to the floating state receives larger pushing force, the rotating component 221 can further clean oxides at different positions at a faster speed, the oxides can be cleaned faster while the flow rate of oxygen is accelerated, and the OCZ charging sparking phenomenon can be prevented.
In some examples, as shown in fig. 2-4, when the rotating assembly 221 is slidingly connected to the guiding structure 222, the distance between the first end and the second end of the guiding structure 222 ranges from 100mm to 300mm, and if the distance between the first end and the second end is too large, the position of the rotating assembly 221 at the lowest position is too low, so that it is difficult to remove the solid oxide under the air guiding device 11; if the distance between the first end and the second end is too small, the moving range of the rotating component 221 on the guiding structure 222 is too small, and there is no moving space, so that the cleaning range of the oxide is too small, and the cleaning effect is poor.
By way of example, and as shown in FIG. 2, the distance between the first end and the second end of the guide structure 222 may be 100mm, 150mm, 200mm, 250mm, 300mm, etc., by way of example only, and not limitation.
Illustratively, the guide structure 222 may be a guide post as shown in fig. 2.
In some examples, as shown in fig. 2-4, the cleaning structure 22 further includes a first stop 223 and a second stop 224, the first stop 223 being disposed at a first end of the guide structure 222, and the second stop 224 being disposed at a second end of the guide structure 222. When the rotating assembly 221 is slidably connected to the guide structure 222, in order to prevent the rotating assembly 221 from being separated from the guide structure 222 during the back and forth movement, a first limiting member 223 and a second limiting member 224 may be disposed at a first end and a second end of the guide structure 222, respectively, such that the rotating assembly 221 moves only back and forth between the first end and the second end of the guide structure 222. The first limiting member 223 and the second limiting member 224 may be spherical limiting members as shown in fig. 2, or may be cubic limiting members or limiting members with other special-shaped structures, which only need to meet the limiting requirement and not cause accumulation of oxides, and are only exemplified herein, but not particularly limited.
In some alternative embodiments of the present application, as shown in fig. 2-4, the rotation assembly 221 includes a connection 2212 and a plurality of rotation members 2211 provided on the connection 2212, the connection 2212 being used to connect the rotation members 2211 and the guide structure 222 such that each rotation member 2211 is capable of rotating about the guide structure 222.
Based on this, as shown in fig. 2 to 4, the rotating assembly 221 includes a plurality of rotating members 2211 mounted on the connecting member 2212, the connecting member 2212 is connected with the guiding structure 222, under the disturbance effect of the air flow provided by the vacuum pump, each rotating member 2211 receives the driving force of the air flow to drive the connecting member 2212 to rotate around the guiding structure 222, and at the same time, the rotating member 2211 cuts the solid oxide blocked under the air guiding device 11 and drives the cut solid oxide to continue to rotate, so that the cut solid oxide can enter the exhaust pipeline 10 under the cleaning device 2 along with the flowing direction 3 of the oxygen and be normally discharged, and at the same time, after the rotating member 2211 starts to rotate, the oxide is not easy to accumulate under the exhaust pipeline 10, and even if the accumulation is also cleaned by the rotating member 2211 quickly. The blockage of the exhaust pipeline 10 is avoided, the rise of the furnace pressure in the single crystal furnace 1 is further avoided, the normal operation of the single crystal furnace 1 and the normal production of crystal bars are ensured, meanwhile, no additional energy or equipment drive is needed, only the vacuum pump used by the single crystal furnace 1 is needed, and the operation is simple while the resources are saved.
As shown in fig. 2 to 4, the number of the rotating members 2211 ranges from 4 to 6, and if the number of the rotating members 2211 is too small, the pushing force of the air flow to the rotating members 2211 is small, so that the rotating effect of the rotating members 2211 is poor, the turbulence effect is poor, and the oxide removal is incomplete; if the number of the rotating members 2211 is too large, the distance between two adjacent rotating members 2211 is too small and too dense, which may cause an effect of blocking the airflow, and may further drive the rotating members 2211 to rotate at a high speed, so that the rotating members 2211 are easy to lose control. For example, the number of the rotating members 2211 may be 4, 5, or 6, etc., which are only exemplified herein and are not particularly limited.
The rotating member 2211 may be a fan blade structure as shown in fig. 2, or may be any other type of structure, which is only required to perform the function of cleaning oxide by rotating under the driving of air flow, and is not particularly limited herein.
The rotatable member and the connecting member may be detachably connected, for example.
The materials used for preparing the components in the whole cleaning device can be the same or different, and are preferably materials common in production, for example, the materials can be all made of steel with a 316s structure, and the materials are only used for example and are not particularly limited.
By way of example, the maximum length of each rotary member may be 70mm, which is only exemplary and not particularly limited, and may be capable of normal rotation in the exhaust duct.
In some examples, as shown in fig. 2-4, the extending surface of each rotation member 2211 obliquely intersects the extending direction of the guide structure 222. Based on this, the extension surface of the rotating member 2211 is not completely horizontal or completely vertical, but obliquely intersects with the horizontal or vertical surface, and the rotating member 2211 can be rotated by the pushing force generated by the air flow. Among them, it is preferable that the rotation member 2211 has an arrangement form having a small inclination angle in the horizontal direction as shown in fig. 2 as compared with the rotation member 2211 inclined in the vertical direction, and the rotation member 2211 at this time does not easily adsorb oxides as the rotation member 2211 inclined in the vertical direction, may be arranged more loosely, does not need to be arranged densely as the rotation member 2211 inclined in the vertical direction, and thus affects the flow rate of oxygen, etc., so that oxides are more easily accumulated on the rotation member 2211.
Based on the same inventive concept, the application also provides a single crystal furnace, which comprises a cleaning device positioned at the water cooling area of the exhaust pipeline in the single crystal furnace, wherein the cleaning device is the cleaning device for cleaning the oxide in the exhaust pipeline in the first aspect.
When the air guide device below is exhaust duct's water-cooling region department, because the temperature of here is lower, the oxide solidifies at this place more easily and piles up, adopts the cleaning device that this application embodiment provided, can clear up the solid oxide of pile up through the mode of vortex, prevents simultaneously that the oxide from piling up again.
Compared with the prior art, the cleaning device for removing the oxide in the exhaust pipeline and the single crystal furnace provided by the application have the advantages that at least the following effects are realized:
the application provides a cleaning device and single crystal growing furnace for cleaing away oxide in exhaust duct, cleaning device establishes the air guide device below in exhaust duct for clear up from exhaust duct in discharge and block up the oxide in the air guide device below easily. The cleaning device comprises a bearing structure and a cleaning structure which are connected with each other, wherein the bearing structure is arranged on the pipe wall of the exhaust pipeline and is used for bearing and supporting the cleaning structure, so that the cleaning structure can stably run; the diameter of the cleaning structure is smaller than that of the exhaust pipeline, so that the cleaning structure can normally operate in the exhaust pipeline, oxides blocking below the air guide device are dispersed by the cleaning structure in a mode of disturbing air flow, and the dispersed oxides are not accumulated below the air guide device and are discharged along with the exhaust pipeline. Therefore, by adopting the cleaning device for cleaning the oxide in the exhaust pipeline and the single crystal furnace, the oxide blocked below the air guide device can be cleaned, and meanwhile, the accumulation of the oxide is avoided, so that the furnace pressure of the single crystal furnace is reduced, and the normal operation of the single crystal furnace is ensured.
Although specific embodiments of the present application have been described in detail by way of example, it will be appreciated by those skilled in the art that the above examples are for illustration only and are not intended to limit the scope of the present application. It will be appreciated by those skilled in the art that modifications may be made to the above embodiments without departing from the scope and spirit of the present application. The scope of the application is defined by the appended claims.
Claims (8)
1. The cleaning device is characterized in that the cleaning device is arranged in the exhaust pipeline, an air guide device is arranged in the exhaust pipeline, and the cleaning device is arranged below the air guide device; the cleaning device includes:
the bearing structure is arranged on the pipe wall of the exhaust pipeline;
the cleaning structure is connected with the bearing structure and used for dispersing the oxide in a mode of disturbing air flow, and the diameter of the cleaning structure is smaller than that of the exhaust pipeline;
the cleaning structure comprises a rotating assembly and a guide structure positioned at the rotating shaft of the rotating assembly, the guide structure is provided with a first end and a second end which are opposite, the first end is fixedly connected with the bearing structure, and the second end is fixedly connected with the rotating assembly; or alternatively, the first and second heat exchangers may be,
the cleaning structure comprises a rotating assembly and a guide structure positioned at the rotating shaft of the rotating assembly, the guide structure is provided with a first end and a second end which are opposite, the first end is fixedly connected with the bearing structure, the second end is positioned below the rotating assembly, and the rotating assembly is in sliding connection with the guide structure;
the cleaning structure further comprises a first limiting part and a second limiting part, wherein the first limiting part is arranged at the first end of the guiding structure, and the second limiting part is arranged at the second end of the guiding structure.
2. The cleaning device according to claim 1, wherein the air guide device is an air guide device with gradually decreasing diameter from top to bottom; the distance range between the cleaning device and the air guide device is 20 mm-40 mm.
3. The cleaning apparatus for removing oxides from an exhaust conduit of claim 1, wherein the carrier structure is secured to the exhaust conduit; or, the bearing structure is detachably connected with the exhaust pipeline.
4. A cleaning device for removing oxides from an exhaust conduit as defined in claim 3, wherein when the carrying structure is detachably connected to the exhaust conduit, the exhaust conduit further comprises a plurality of sequentially disposed stoppers, the carrying structure being detachably connected to the exhaust conduit by the stoppers.
5. The cleaning apparatus for cleaning oxide in an exhaust pipe according to claim 1, wherein the carrying structure is a carrying structure having a combined structure or an integrated carrying structure; the bearing structure is provided with a hollow for conducting air flow, and the cleaning structure is connected to a position where the bearing structure does not have the hollow.
6. The cleaning apparatus for removing oxides from an exhaust conduit of claim 1, wherein the rotating assembly comprises a connector and a plurality of rotating members disposed on the connector, the connector being configured to connect the rotating members and the guide structure such that each of the rotating members is rotatable about the guide structure.
7. The cleaning apparatus for removing oxides from an exhaust gas conduit of claim 6, wherein an extension surface of each of said rotary members obliquely intersects an extension direction of said guide structure.
8. The single crystal furnace is characterized by comprising a cleaning device positioned at a water cooling area of an exhaust pipeline in the single crystal furnace, wherein the cleaning device is used for cleaning oxides in the exhaust pipeline according to any one of claims 1-7.
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