CN115236955B - Photoetching method for obtaining symmetrical patterns - Google Patents
Photoetching method for obtaining symmetrical patterns Download PDFInfo
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- CN115236955B CN115236955B CN202211166299.9A CN202211166299A CN115236955B CN 115236955 B CN115236955 B CN 115236955B CN 202211166299 A CN202211166299 A CN 202211166299A CN 115236955 B CN115236955 B CN 115236955B
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
The application relates to a photoetching method for obtaining a symmetrical pattern, which comprises the steps of making an alignment mark line on the edge of a substrate; determining the region where the target pattern is located on the photomask, covering a shielding layer on the rest regions of the photomask to form a boundary between the shielding layer and the region where the target pattern is located, and enabling the boundary to be parallel to a second datum line of the photomask; adjusting the position of the substrate relative to the mask covered with the masking layer to align based on the alignment mark line, the boundary, the second reference line, and the first reference line of the substrate; performing a first exposure to etch a target pattern on the substrate; rotating the mask covered with the shielding layer by 180 degrees, and adjusting the position of the substrate relative to the mask again to align; a second exposure is performed to imprint the target pattern on the substrate. The method can form symmetrical patterns on the substrate to be exposed by using the existing asymmetric photolithography mask, fully utilizes the substrate space, is simple and feasible, saves time and labor, reduces cost and ensures the photolithography precision.
Description
Technical Field
The present disclosure relates to the field of photolithography, and in particular, to a photolithography method for obtaining a symmetrical pattern.
Background
When photolithography is performed based on a manual photoetching machine, if the upper and lower parts of the photolithography pattern are not symmetrical, but a symmetrical pattern is required to be obtained on a substrate to be exposed, for example, test comparison is required to be performed by using 2 half-plates, a common practice is to redesign a photolithography pattern, but the first step is to re-plot the photolithography pattern by manpower and time, the second step is to process a new photolithography pattern by a period of one week, project progress is affected, and the third step is to process the new photolithography pattern.
Disclosure of Invention
The embodiment of the application provides a photoetching method for obtaining a symmetrical pattern, which can form the symmetrical pattern on a substrate to be exposed by utilizing the existing asymmetric photoetching plate, is simple and feasible, saves time and labor, reduces cost, fully utilizes the space of the substrate and ensures photoetching precision.
The embodiment of the application provides a photoetching method for obtaining a symmetrical graph, which comprises the following steps:
an alignment mark line is made on the edge of the substrate;
determining the region where the target pattern is located on the photomask, covering a shielding layer on the rest region of the photomask to form a boundary between the shielding layer and the region where the target pattern is located, and enabling the boundary to be parallel to a second datum line of the photomask;
adjusting the position of the substrate relative to the mask covered with the masking layer to align based on the alignment mark line, the boundary, the second reference line, and the first reference line of the substrate;
performing first exposure to enable a target pattern to be carved on the substrate;
rotating the photoetching plate covered with the shielding layer by 180 degrees, and adjusting the position of the substrate relative to the photoetching plate again to align;
a second exposure is performed to imprint a target pattern on the substrate.
In some embodiments, adjusting the position of the substrate relative to the reticle covered with the masking layer to align based on the alignment mark line, the boundary, the second reference line, and the first reference line of the substrate, comprises:
adjusting the substrate to enable the first datum line and the second datum line to coincide;
the substrate is again adjusted so that the alignment mark lines are flush with the boundary.
In some embodiments, adjusting the substrate to coincide the first reference line with the second reference line includes:
adjusting the substrate so that the first datum line is flush with the second datum line;
and adjusting the substrate again along the length direction of the first datum line so as to align the two ends of the first datum line with the two ends of the second datum line.
In some embodiments, adjusting the substrate to bring the first fiducial line flush with the second fiducial line includes:
when the first datum line and the second datum line are not parallel, the substrate is rotated to enable the first datum line to be parallel to the second datum line, and the substrate is adjusted along the direction perpendicular to the length direction of the first datum line until the first datum line is flush with the second datum line;
and when the first datum line is parallel to the second datum line, the substrate is adjusted along the direction perpendicular to the length direction of the first datum line until the first datum line is flush with the second datum line.
In some embodiments, readjusting the position of the substrate relative to the reticle to align, comprising:
and adjusting the substrate along the direction perpendicular to the length direction of the first datum line until the alignment mark line is flush with the boundary.
In some embodiments, the alignment mark line is a score line;
and/or, the shielding layer is tinfoil paper.
In some embodiments, when the target pattern is a left-right axisymmetric pattern, the obtained symmetric pattern is an axisymmetric pattern and a center-symmetric pattern;
when the target pattern is a left-right non-axisymmetric pattern, the obtained symmetric pattern is a central symmetric pattern.
In some embodiments, the lithographic method further comprises, prior to making the alignment mark lines on the substrate: and (5) performing spin coating and pre-baking on the substrate.
In some embodiments, after performing the second exposure, the lithographic method further comprises: development and hardening.
In some embodiments, the lithographic method further comprises an overlay, the overlay comprising:
determining the region where the overlay target pattern is located on the overlay lithography plate, and covering a shielding layer on the rest regions on the overlay lithography plate so as to form a boundary between the shielding layer and the region where the overlay target pattern is located; the position of the region of the upper covering shielding layer of the overlay lithography plate is consistent with that of the region of the upper covering shielding layer of the lithography plate;
adjusting the position of the substrate relative to the overlay lithography plate covered with the shielding layer, and performing overlay and exposure;
the overlay mask covered with the masking layer is rotated 180 deg., and the overlay and exposure are performed again.
The beneficial effects that technical scheme that this application provided brought include:
according to the photoetching method, under the condition that a new photoetching plate does not need to be redesigned and manufactured, symmetrical pattern transfer is realized on the substrate by utilizing the asymmetric photoetching plate, the space of the substrate is fully utilized, the photoetching precision is ensured, and the method is simple and easy to operate, saves time and labor and reduces cost.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic view of a substrate provided in an embodiment of the present application;
FIG. 2 is a schematic illustration of a lithographic plate provided in an embodiment of the present application;
FIG. 3 is a schematic view of the upper cover of FIG. 2 after covering the masking layer;
FIG. 4 is a schematic diagram of a first exposure provided in an embodiment of the present application;
fig. 5 is a schematic diagram of the second exposure according to the embodiment of the present application.
In the figure: 1. a substrate; 10. aligning the mark lines; 11. a first reference line; 2. a photolithography mask; 20. a target pattern; 21. a second reference line; 3. a shielding layer; 4. a boundary.
Detailed Description
For the purposes of making the objects, technical solutions and advantages of the embodiments of the present application more clear, the technical solutions of the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is apparent that the described embodiments are some embodiments of the present application, but not all embodiments. All other embodiments, which can be made by one of ordinary skill in the art without undue burden from the present disclosure, are within the scope of the present application based on the embodiments herein.
Referring to fig. 1, 2, 3, 4 and 5, an embodiment of the present application provides a photolithography method for obtaining a symmetrical pattern, the photolithography method including the steps of:
101: the spin coating and pre-baking are performed on the substrate 1 according to conventional methods.
102: referring to fig. 1, an alignment mark 10 is made on the edge of a substrate 1, and a tip of a tool such as forceps can be used to gently scribe a score line on the edge of the substrate 1, wherein the length of the alignment mark 10 is relatively short, and the principle is that the alignment mark is out of a target pattern 20; in addition, other ways of making the alignment mark line 10 may be used, such as using a knife or the like.
The substrate 1 has a first reference line 11 thereon, the first reference line 11 being formed by the physical shape of the substrate 1 itself.
103: referring to fig. 2 and 3, the area where the target pattern 20 is located is determined on the mask 2, and the remaining area on the mask 2 is covered with the mask layer 3 to form a boundary 4 between the mask layer 3 and the area where the target pattern 20 is located, it should be noted that the boundary 4 is not a drawn/engraved line, but is formed due to the presence of the mask layer 3, and the boundary 4 needs to be parallel to a reference line of the mask 2, that is, a second reference line 21, where the second reference line 21 is a mark drawn by the pattern design itself on the mask 2, and the second reference line 21 is generally equal in length to the first reference line 11; the mask layer 3 is used to block the unwanted pattern on the mask 2, and the mask layer 3 may be made of an opaque material, for example, tin foil is used as the mask layer 3, and various fixing methods of the mask layer 3 are used, for example, the mask layer 3 may be used to cover the mask by bonding.
It should be noted that, step 102 and step 103 may be performed simultaneously, or the masking layer 3 may be first covered, and then the alignment mark line 10 may be formed on the substrate 1.
104: the mask plate 2 covered with the shielding layer 3 and the substrate 1 are placed on a lithographic machine, and the position of the substrate 1 relative to the mask plate 2 covered with the shielding layer 3 is adjusted by using a horizontal adjustment knob and an X-direction displacement knob of the lithographic machine and a Y-direction displacement knob of the lithographic machine by means of an alignment mark line 10, a boundary 4, a first reference line 11 and a second reference line 21, so that the substrate 1 and the mask plate 2 are aligned. The X direction is a longitudinal direction of the first reference line 11, and the Y direction is a direction perpendicular to the longitudinal direction of the first reference line 11.
105: referring to fig. 4, a first exposure is performed with respect to a partial region of the substrate 1 so that the target pattern 20 is engraved on the substrate 1.
106: holding the substrate 1 stationary, rotating the reticle 2 covered with the masking layer 3 by 180 ° and again adjusting the position of the substrate 1 relative to the reticle 2 to align the substrate 1 and the reticle 2.
107: referring to fig. 5, a second exposure is performed with respect to the remaining portion of the substrate 1 to etch the target pattern 20 on the substrate 1.
108: developing and hardening according to the conventional method to obtain the symmetrical pattern.
Therefore, the photoetching method provided by the application realizes symmetrical pattern transfer on the substrate by using the asymmetric photoetching plate under the condition that a new photoetching plate is not required to be redesigned and manufactured, fully utilizes the space of the substrate, ensures the photoetching precision, is simple and easy to operate, saves time and labor and reduces the cost.
In step 104, the alignment mark line 10, the boundary 4, the first reference line 11, and the second reference line 21 are used to adjust the position of the substrate 1 relative to the mask 2 covered with the shielding layer 3, so as to align the substrate 1 and the mask 2, including the following steps:
201: adjusting the substrate 1 by using a horizontal adjusting knob, an X-direction displacement knob and a Y-direction displacement knob of the photoetching machine so as to enable the first datum line 11 and the second datum line 21 to coincide;
202: the substrate 1 is again adjusted by using the Y-direction displacement knob of the lithographic apparatus so that the substrate 1 is moved in a direction perpendicular to the length direction of the first reference line 11, i.e., in the Y-direction, until the alignment mark line 10 is flush with the boundary 4, and alignment of the substrate 1 and the lithographic plate 2 is completed, as shown in fig. 4.
In the above step 201, in order to overlap the first reference line 11 and the second reference line 21, the following steps may be adopted, and specifically include:
301: the substrate 1 is adjusted so that the first reference line 11 is flush with the second reference line 21.
In step 301, the first reference line 11 and the second reference line 21 may or may not be parallel but not flush before the substrate 1 is adjusted.
Therefore, the first reference line 11 is flush with the second reference line 21, and it is necessary to adjust the arrangement according to the above two cases.
Specifically, when the first reference line 11 and the second reference line 21 are not parallel, the substrate 1 is first adjusted by the horizontal adjustment knob so that the first reference line 11 is parallel to the second reference line 21, and then the substrate 1 is adjusted by the Y-direction displacement knob in a direction perpendicular to the length direction of the first reference line 11 until the first reference line 11 is flush with the second reference line 21.
When the first reference line 11 is parallel to the second reference line 21, the substrate 1 is adjusted in a direction perpendicular to the longitudinal direction of the first reference line 11 directly using the Y-direction displacement knob until the first reference line 11 is flush with the second reference line 21.
302: the substrate 1 is again adjusted along the length direction of the first reference line 11 by the X-direction displacement knob until the first reference line 11 is aligned with both ends of the second reference line 21.
Since the first reference line 11 and the second reference line 21 have been previously overlapped, in the above step 106, although the reticle 2 is pulled out and rotated, it is then put into the photolithography machine again, and at this time, it is not necessary to perform adjustment in the X direction again.
Thus, in step 106, the position of the substrate 1 relative to the reticle 2 is again adjusted to align the substrate 1 with the reticle 2, mainly in the Y-direction. Specifically, the method comprises the following steps:
the substrate 1 is adjusted in a direction perpendicular to the length direction of the first reference line 11 by means of the Y-direction displacement knob until the alignment mark line 10 is flush with the boundary 4, as shown in fig. 5.
It can be seen that with the method of the present application, the operation method is simpler because the adjustment in the X direction does not need to be performed again after rotating the reticle 2.
If the target pattern 20 is a left-right axisymmetric pattern, the symmetric pattern obtained by the photolithography method of the present application is not only an axisymmetric pattern but also a center symmetric pattern.
If the target pattern 20 is a left-right non-axisymmetric pattern, the symmetric pattern obtained by the photolithography method of the present application is a center symmetric pattern.
Since the substrate 1 is subjected to multi-layer lithography in the semiconductor manufacturing process, after the lithography of the lithography plate 2 is completed, that is, after the first lithography and the subsequent processes are completed, if the lithography overlay is further required to be performed on the complete substrate 1, the overlay may be performed according to the following steps:
401: determining the region where the overlay target pattern is located on the overlay lithography plate, and covering a shielding layer 3 on the rest region of the overlay lithography plate to form a boundary 4 between the shielding layer 3 and the region where the overlay target pattern is located; the position of the area of the overlay mask covering the shielding layer 3 is identical to that of the area of the mask 2 covering the shielding layer 3.
In step 401, substrate 1 is intact and not split into two halves.
It should be noted that the above-mentioned overlay mask is also a mask 2, the mask 2 is not a mask with the previous mask 2, and the overlay target pattern is the target pattern 20 on the mask 2, but the target pattern 20 is different from the target pattern 20 of the previous mask 2.
402: the position of the substrate 1 relative to the overlay lithography plate covered with the shielding layer 3 is adjusted, and the overlay and exposure are performed for a partial region of the substrate 1.
403: the overlay mask covered with the masking layer 3 is rotated 180 deg., and the rest of the area of the substrate 1 is subjected to the overlay and exposure.
404: developing and hardening the substrate according to a conventional method.
In the description of the present application, it should be noted that the azimuth or positional relationship indicated by the terms "upper", "lower", etc. are based on the azimuth or positional relationship shown in the drawings, and are merely for convenience of description of the present application and simplification of the description, and are not indicative or implying that the apparatus or element in question must have a specific azimuth, be configured and operated in a specific azimuth, and thus should not be construed as limiting the present application. Unless specifically stated or limited otherwise, the terms "mounted," "connected," and "coupled" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the terms in this application will be understood by those of ordinary skill in the art as the case may be.
It should be noted that in this application, relational terms such as "first" and "second" and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
The foregoing is merely a specific embodiment of the application to enable one skilled in the art to understand or practice the application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the application. Thus, the present application is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (4)
1. A lithographic method for obtaining a symmetrical pattern, comprising:
when photoetching is carried out based on a manual photoetching machine, after the substrate (1) is subjected to spin coating and pre-baking, an alignment mark line (10) is formed at the edge;
determining the area of the target pattern (20) on the photoetching plate (2), and covering a shielding layer (3) on the rest area of the photoetching plate (2) so as to form a boundary (4) between the shielding layer (3) and the area of the target pattern (20), wherein the boundary (4) is parallel to a second datum line (21) of the photoetching plate (2);
adjusting the substrate (1) so that the first reference line (11) and the second reference line (21) of the substrate (1) coincide;
-readjusting the substrate (1) so that the alignment mark line (10) is flush with the boundary (4);
performing a first exposure to etch a target pattern (20) on the substrate (1);
rotating the photoetching plate (2) covered with the shielding layer (3) by 180 degrees, and adjusting the substrate (1) along the direction perpendicular to the length direction of the first datum line (11) until the alignment mark line (10) is flush with the boundary (4);
performing a second exposure to etch a target pattern (20) on the substrate (1);
developing and hardening the substrate (1) to obtain a symmetrical pattern;
wherein, adjust the substrate (1) so that the first datum line (11) and second datum line (21) coincide, include:
when the first reference line (11) is not parallel to the second reference line (21), the substrate (1) is rotated so that the first reference line (11) is parallel to the second reference line (21), and the substrate (1) is adjusted along a direction perpendicular to the length direction of the first reference line (11) until the first reference line (11) is flush with the second reference line (21);
when the first datum line (11) is parallel to the second datum line (21), the substrate (1) is adjusted along the direction perpendicular to the length direction of the first datum line (11) until the first datum line (11) is flush with the second datum line (21);
the substrate (1) is again adjusted along the length direction of the first datum line (11) so that the two ends of the first datum line (11) are aligned with the two ends of the second datum line (21).
2. A lithographic method for obtaining a symmetrical pattern as claimed in claim 1, wherein:
the alignment mark line (10) is a notch line;
and/or, the shielding layer (3) is tinfoil.
3. A lithographic method for obtaining a symmetrical pattern as claimed in claim 1, wherein:
when the target pattern (20) is a left-right axisymmetric pattern, the obtained symmetric patterns are an axisymmetric pattern and a center symmetric pattern;
when the target pattern (20) is a left-right non-axisymmetric pattern, the obtained symmetric pattern is a center symmetric pattern.
4. A lithographic method for obtaining a symmetrical pattern as claimed in claim 1, wherein:
the lithographic method further includes an overlay, the overlay including:
determining the region where the overlay target pattern is located on the overlay lithography plate, and covering a shielding layer (3) on the rest region of the overlay lithography plate so as to form a boundary (4) between the shielding layer (3) and the region where the overlay target pattern is located; wherein the position of the area covered by the shielding layer (3) on the overlay lithography plate is consistent with the position of the area covered by the shielding layer (3) on the lithography plate (2);
adjusting the position of the substrate (1) relative to the overlay lithography plate covered with the shielding layer (3), and performing overlay and exposure;
the overlay lithography plate covered with the masking layer (3) is rotated 180 ° and the overlay and exposure are performed again.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202211166299.9A CN115236955B (en) | 2022-09-23 | 2022-09-23 | Photoetching method for obtaining symmetrical patterns |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202211166299.9A CN115236955B (en) | 2022-09-23 | 2022-09-23 | Photoetching method for obtaining symmetrical patterns |
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| CN115236955B true CN115236955B (en) | 2023-06-13 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| GB2066507B (en) * | 1980-12-18 | 1983-08-17 | Dainippon Screen Mfg | Method of photographic printing and a photographic original plate for use therein |
| CN104391431B (en) * | 2014-12-12 | 2016-06-29 | 合肥京东方光电科技有限公司 | Exposure imaging method and system, Exposure Control Module |
| CN105988299B (en) * | 2015-02-02 | 2017-11-10 | 中芯国际集成电路制造(上海)有限公司 | A kind of monitoring method of mask plate and scan exposure board focal length |
| KR102392043B1 (en) * | 2015-05-06 | 2022-04-28 | 삼성디스플레이 주식회사 | Display substrate exposure method |
| JP6723269B2 (en) * | 2015-05-15 | 2020-07-15 | ケーエルエー コーポレイション | System and method for focus determination using a focus sensitive overlay target |
| CN107065450B (en) * | 2017-05-10 | 2018-10-02 | 株洲中车时代电气股份有限公司 | A kind of power semiconductor chip, the reticle and its exposure method of the chip |
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