CN115197791A - 一种用于预清洗硅片的表面活性剂、其制备方法及应用 - Google Patents

一种用于预清洗硅片的表面活性剂、其制备方法及应用 Download PDF

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CN115197791A
CN115197791A CN202210943090.2A CN202210943090A CN115197791A CN 115197791 A CN115197791 A CN 115197791A CN 202210943090 A CN202210943090 A CN 202210943090A CN 115197791 A CN115197791 A CN 115197791A
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刘冬斌
金善明
陈健
秦铁军
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Abstract

本发明公开了一种用于预清洗硅片的表面活性剂、其制备方法及应用，该表面活性剂按质量份包括以下组分：三乙醇胺油酸皂18‑25份，环氧基三乙酸酯10‑30份，乙基丙醇聚氧乙烯醚15‑35份，余量为水。该制法为：将三乙醇胺油酸皂、环氧基三乙酸酯、乙基丙醇聚氧乙烯醚与水按照质量份数比混合搅拌，制得。该表面活性剂具体应用于插片前的预清洗工序中。本发明能有效降低水的表面张力和提高水的渗透性以及润滑性，使得硅片间更加润滑，减少硅片在分片过程中两片摩擦，减少黏连片、卡片；表面活性剂渗透到硅粉与硅片粘结的界面上降低了硅粉与硅片的吸附力，使得硅粉更容易被水流剥离，最终使崩边率降低30％，清洗后污片率下降20％。

Description

一种用于预清洗硅片的表面活性剂、其制备方法及应用
技术领域
本发明涉及一种表面活性剂、其制备方法及应用，尤其涉及一种用于预清洗硅片的表面活性剂、其制备方法及应用。
背景技术
随着光伏切片尺寸不断增大，金刚线线径越来越细，金刚石粒径越来越小，切割中硅粉粒径越来越小。切割中使用的切割液在切割后包裹着硅粉很容易粘附在硅片上，使得硅片表面硅粉沉积越来越严重。硅片间涩度逐步增大，插片在分片过程中不容易被水流分开，硅片间会相互摩擦，导致大量棱边崩缺，即崩边。粘附在硅片表面的硅粉太多，容易带到清洗机槽体，加剧了清洗难度，污片也明显上升。
硅片在插片前会经过预清洗阶段，现有技术中的预清洗阶段是将硅片浸泡在水中。这样做存在的问题有：因为水的表面张力较大，导致对硅片的浸润性和渗透性不足，水难以渗透到硅粉与硅片粘结的界面上，因此，现有技术中的预清洗环节很难将硅粉从硅片表面剥离。
使用现有的表面活性剂清洗效果较差，污片和崩边改善不明显。
发明内容
发明目的：本发明的目的是提供一种能降低硅片崩边和污片的用于预清洗硅片的表面活性剂；
本发明的第二个目的是提供上述用于预清洗硅片的表面活性剂的制备方法；
本发明的第三个目的是提供上述用于预清洗硅片的表面活性剂的应用。
技术方案：本发明所述的用于预清洗硅片的表面活性剂，按质量份包括以下组分：三乙醇胺油酸皂18-25份，环氧基三乙酸酯10-30份，乙基丙醇聚氧乙烯醚15-35份，余量为水。
进一步的，上述的用于预清洗硅片的表面活性剂，按质量份包括以下组分：三乙醇胺油酸皂17-25份，环氧基三乙酸酯15-30份，乙基丙醇聚氧乙烯醚30-35份，余量为水。
上述的用于预清洗硅片的表面活性剂的制备方法，将三乙醇胺油酸皂、环氧基三乙酸酯、乙基丙醇聚氧乙烯醚与水按照质量份数比混合搅拌，制得所述用于预清洗硅片的表面活性剂。
其中，所述混合搅拌的时间为搅拌1～2小时优选搅拌的转速为500转/分钟；所述混合时的温度为20～25℃。
本发明所述的用于预清洗硅片的表面活性剂在金刚线切割硅片中的应用。
其中，所述表面活性剂应用于插片前的预清洗工序中。所述加入的表面活性剂的量为8～12L/台/天。
发明原理：在现有切割工艺条件下，导入本发明的表面活性剂加入到插片前的周转车里，表面活性剂可以渗透到硅片与硅粉的粘接界面上，使得水分子能够浸润到两者之间。表面活性剂的疏水端基团吸附到硅片与硅片之间或者硅粉孔隙中建立一个渗透通道，而表面活性剂的亲水基团使水分子和一些润滑分子更容易进入到硅片表面和硅片之间，降低硅粉之间以及硅粉与硅片之间的吸附力和减少硅片与硅片之间的摩擦力，从而有利于清洗机插片和清洗，减少硅片的崩边状况和污片率的下降。
有益效果：本发明与现有技术相比，取得如下显著效果：1、本发明能有效降低水的表面张力和提高水的渗透性以及润滑性，使得硅片间的更加润滑，减少硅片在分片过程中两片摩擦，减少黏连片、卡片，大幅降低崩边率和污片率。2、表面活性剂渗透到硅粉与硅片粘结的界面上降低了硅粉与硅片的吸附力，使得硅粉更容易被水流剥离。3、本发明的表面活性剂使得硅片崩边率降低30％，清洗后污片率下降20％。
具体实施方式
下面对本发明作进一步详细描述。
实施例1
一种用于预清洗硅片的表面活性剂，按质量百分比包括以下组分：三乙醇胺油酸皂FM 17份，环氧基三乙酸酯POD 15份，乙基丙醇聚氧乙烯醚AT-2 30份，余量水。
上述用于预清洗硅片的表面活性剂的制备方法为：依次将各组分加入搅拌缸，温度20℃，分散搅拌60min，过滤包装，制得添加剂。每台机每天使用8L。
经检测后，崩边率和污片率同比均有下降，下降幅度合计约0.15％。
实施例2
一种用于预清洗硅片的表面活性剂，按质量百分比包括以下组分：三乙醇胺油酸皂FM 25份，环氧基三乙酸酯POD 10份，乙基丙醇聚氧乙烯醚AT-2 35份，余量水。
上述用于预清洗硅片的表面活性剂的制备方法为：依次将各组分加入搅拌缸，温度25℃，分散搅拌120min，过滤包装，制得添加剂。每台机每天使用12L。
经检测后，崩边率和污片率同比均有下降，下降幅度合计约0.6％。
实施例3
一种用于预清洗硅片的表面活性剂，按质量百分比包括以下组分：三乙醇胺油酸皂FM 25份，环氧基三乙酸酯POD 30份，乙基丙醇聚氧乙烯醚AT-2 14份，余量水。
上述用于预清洗硅片的表面活性剂的制备方法为：依次将各组分加入搅拌缸，温度25℃，分散搅拌120min，过滤包装，制得添加剂。每台机每天使用12L；
经检测后，崩边率和污片率同比均有下降，下降幅度合计约0.25％。
实施例4
一种用于预清洗硅片的表面活性剂，按质量百分比包括以下组分：三乙醇油酸皂FM 18份，环氧基三乙酸酯POD 15份，乙基丙醇聚氧乙烯醚AT-2 30份，余量水。
上述用于预清洗硅片的表面活性剂的制备方法为：依次将各组分加入搅拌缸，温度20℃，分散搅拌60min，过滤包装，制得添加剂。每台机每天使用8L。
经检测后，崩边率和污片率同比均有下降，下降幅度合计约0.2％。

Claims (8)

1.一种用于预清洗硅片的表面活性剂，其特征在于，按质量份包括以下组分：三乙醇胺油酸皂18-25份，环氧基三乙酸酯10-30份，乙基丙醇聚氧乙烯醚15-35份，余量为水。
2.根据权利要求1所述的用于预清洗硅片的表面活性剂，其特征在于，按质量份包括以下组分：三乙醇胺油酸皂17-25份，环氧基三乙酸酯15-30份，乙基丙醇聚氧乙烯醚30-35份，余量为水。
3.一种权利要求1所述的用于预清洗硅片的表面活性剂的制备方法，其特征在于，将三乙醇胺油酸皂、环氧基三乙酸酯、乙基丙醇聚氧乙烯醚与水按照质量份数比混合搅拌，制得所述用于预清洗硅片的表面活性剂。
4.权利要求3所述的用于预清洗硅片的表面活性剂的制备方法，其特征在于，所述混合搅拌的时间为1～2h。
5.权利要求3所述的用于预清洗硅片的表面活性剂的制备方法，其特征在于，所述混合时的温度为20～25℃。
6.一种权利要求1所述用于预清洗硅片的表面活性剂在金刚线切割硅片中的应用。
7.根据权利要求6所述用于预清洗硅片的表面活性剂在金刚线切割硅片中的应用，其特征在于，所述表面活性剂应用于插片前的预清洗工序中。
8.根据权利要求6所述用于清洗硅片的表面活性剂在金刚线切割硅片中的应用，其特征在于，所述加入的表面活性剂的量为8～12L/台/天。
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