CN115189145A - Multifunctional terahertz metamaterial absorber based on Ni-Mn-Sn shape memory alloy film - Google Patents
Multifunctional terahertz metamaterial absorber based on Ni-Mn-Sn shape memory alloy film Download PDFInfo
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- 229910001285 shape-memory alloy Inorganic materials 0.000 title claims abstract description 38
- 239000006096 absorbing agent Substances 0.000 title claims abstract description 36
- 229910018645 Mn—Sn Inorganic materials 0.000 title claims abstract description 28
- 239000002184 metal Substances 0.000 claims abstract description 28
- 229910052751 metal Inorganic materials 0.000 claims abstract description 28
- 239000010408 film Substances 0.000 claims abstract description 25
- 239000010409 thin film Substances 0.000 claims abstract description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 19
- 239000010703 silicon Substances 0.000 claims abstract description 19
- 230000005291 magnetic effect Effects 0.000 claims description 16
- 230000003287 optical effect Effects 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 9
- 230000000737 periodic effect Effects 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- 229910052594 sapphire Inorganic materials 0.000 claims description 2
- 239000010980 sapphire Substances 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- 230000006870 function Effects 0.000 abstract description 10
- 230000033228 biological regulation Effects 0.000 abstract description 8
- 230000001105 regulatory effect Effects 0.000 abstract description 3
- 238000010521 absorption reaction Methods 0.000 description 21
- 238000000862 absorption spectrum Methods 0.000 description 6
- 230000008859 change Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 238000005452 bending Methods 0.000 description 4
- 230000009977 dual effect Effects 0.000 description 4
- 230000004044 response Effects 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910000734 martensite Inorganic materials 0.000 description 3
- 238000013461 design Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 238000002835 absorbance Methods 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000002059 diagnostic imaging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000001453 impedance spectrum Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003446 memory effect Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000007777 multifunctional material Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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Abstract
A multifunctional terahertz metamaterial absorber based on a Ni-Mn-Sn shape memory alloy film. The invention relates to the field of terahertz metamaterial functional devices, in particular to a multifunctional terahertz metamaterial absorber based on a Ni-Mn-Sn shape memory alloy film. The invention aims to solve the problems of complex structure, limited regulation and control mode and single function of the existing terahertz metamaterial. The resonant structure comprises a resonant structure film layer, a laser silicon layer, a dielectric layer and a grounding metal layer; the resonance structure thin film layer is formed by a periodical array of NxN structural units; the single structural unit consists of a Cayley tree metal resonator and a cross-shaped resonator; the first-order tree-shaped branch and the second-order tree-shaped branch are symmetrical with the center of the cross-shaped resonator, and the two third-order tree-shaped branches are symmetrical with the center of the cross-shaped resonator. The invention is used for the multifunctional terahertz metamaterial absorber capable of being dynamically regulated and controlled.
Description
Technical Field
The invention relates to the field of terahertz metamaterial functional devices, in particular to a multifunctional terahertz metamaterial absorber based on a Ni-Mn-Sn shape memory alloy film.
Background
Terahertz (THz) frequency has unique optical energy and bandwidth advantages, and has wide application prospects in the fields of safety detection, explosion detection, spectroscopy, medical imaging, wireless communication and the like. In recent years, metamaterials (MMs) have become ideal candidates for manipulating terahertz waves due to their unique electromagnetic response characteristics. The terahertz metamaterial absorber (TMMAs) has wide application prospect in the fields of efficient photodetectors, terahertz imaging, stealth technology and the like. In the past, terahertz components based on metamaterial are all made of metal materials, and after the processing size is fixed, the functions of the components are difficult to actively change in practical application. Therefore, the development of the actively-controlled terahertz device has important research significance.
Currently, the realization of active adjustment of terahertz waves is mainly based on two different methods: the change of the material property and the function of structural deformation, but the two active control modes have advantages and disadvantages respectively; the regulation and control mode is generally weak in dynamic control capability and high in requirements on material types and preparation processes, and is not beneficial to practical application. The method based on the structure deformation effect not only depends on the complexity of the structure to a great extent, but also has single function and is easy to consume. In addition, the currently researched terahertz active control device has a single function, namely, a single function can be realized only under a single external field. But the single function is difficult to adapt to the requirements of the current technology development. Therefore, the realization of multi-physical field control and the realization of multi-function control of terahertz waves by using a single device is one of the leading edges of the current development of terahertz technology and is a practical requirement of practical application.
Disclosure of Invention
The invention provides a multifunctional terahertz metamaterial absorber based on a Ni-Mn-Sn shape memory alloy film, which aims to solve the problems of complex structure, limited regulation and control mode and single function of the existing terahertz metamaterial.
The multifunctional terahertz metamaterial absorber based on the Ni-Mn-Sn shape memory alloy film is composed of a resonance structure film layer, a light laser silicon layer, a dielectric layer and a grounding metal layer; the resonant structure thin film layer, the optical laser silicon layer, the dielectric layer and the grounding metal layer are arranged from top to bottom in sequence; the resonance structure film layer is formed by a periodical array of NxN structural units; the single structural unit consists of a Cayley tree metal resonator and a cross-shaped resonator; the Cayley tree metal resonator consists of a first-order tree branch, a second-order tree branch and two third-order tree branches; the first-order tree-shaped branch and the second-order tree-shaped branch are symmetrical with the center of the cross-shaped resonator, the two third-order tree-shaped branches are symmetrical with the center of the cross-shaped resonator, and the adjacent branches are spaced by a rotation angle of 120 degrees and keep rotational symmetry of three times; the period of the structural unit of the periodic array is 59-65 mu m, the thickness of the thin film layer of the resonance structure is 0.1-0.3 mu m, the thickness of the optical laser silicon layer is 0.08-0.12 mu m, the thickness of the dielectric layer is 8-12 mu m, and the thickness of the grounding metal layer is 0.1-0.15 mu m; the arm length of the cross-shaped resonator is 38-42 mu m, and the arm width is 1-3 mu m; the arm length of the first-order tree branch is 8-10 mu m, the arm length of the second-order tree branch is 3.6-5.2 mu m, the inner arm length of the third-order tree branch is 5.6-6.0 mu m, and the outer arm length is half of the inner arm length; the arm widths of the first-order tree branch, the second-order tree branch and the third-order tree branch are all 0.95-1.0 μm.
The invention has the beneficial effects that:
1. the multifunction and high performance of the existing tunable metamaterials rely on complex multilayer structures and cumbersome manufacturing processes. The structural unit of the invention can directly deposit the shape memory alloy ultrathin film on the dielectric layer, and has ultrathin thickness and simple structure.
2. The invention realizes the dual modulation of the amplitude deformation and the phase change of the metamaterial by utilizing the magnetic field to drive the recoverable superelasticity deformation of the shape memory alloy and the phase change of the optical laser silicon, and has the advantages of quick response and non-contact regulation.
3. The invention can realize dynamic switching between a broadband absorption mode with the absorptivity of more than 90% and a narrowband absorption mode with the total quality factor Q of 25.8.
4. On the basis of the switchable wide/narrow band absorber, the invention can also realize the additional functions of absorber switching and dynamic absorption rate regulation.
Drawings
FIG. 1 is a three-dimensional structure schematic diagram of a multifunctional terahertz metamaterial absorber;
FIG. 2 is a top view of a thin film layer of a resonant structure;
FIG. 3 is a graph of the absorption spectrum of a first order tree branch;
FIG. 4 is an absorption spectrum of a second order tree branch;
FIG. 5 is an absorption spectrum of a third-order tree branch;
FIG. 6 is an absorption spectrum diagram of a cross-shaped resonator;
FIG. 7 is an absorption spectrum diagram of a multifunctional terahertz metamaterial absorber;
FIG. 8 is a normalized effective impedance spectrum of the multifunctional terahertz metamaterial absorber;
FIG. 9 is a schematic diagram illustrating deformation of a film layer of a resonant structure of the multifunctional terahertz metamaterial absorber under an external magnetic field;
FIG. 10 shows the absorption rate of the multifunctional terahertz metamaterial absorber under different bending deformations of the film layer of the resonant structure under an external magnetic field;
FIG. 11 is a schematic diagram of the conductivity of a laser Si thin film controlled by a pump light source;
FIG. 12 is an absorbance of photoexcited silicon at different conductivities;
FIG. 13 shows the absorption rate of the TE mode of the multifunctional terahertz metamaterial absorber at different incident angles;
FIG. 14 shows the absorption rate of a multifunctional terahertz metamaterial absorber TM mode at different incident angles.
Detailed Description
The first specific implementation way is as follows: as shown in the attached drawings, the multifunctional terahertz metamaterial absorber based on the Ni-Mn-Sn shape memory alloy thin film in the embodiment is composed of a resonance structure thin film layer, a laser silicon layer, a dielectric layer and a grounding metal layer; the resonant structure thin film layer, the optical laser silicon layer, the dielectric layer and the grounding metal layer are arranged from top to bottom in sequence; the resonance structure thin film layer is formed by a periodical array of NxN structural units; the single structural unit consists of a Cayley tree metal resonator and a cross-shaped resonator; the Cayley tree metal resonator consists of a first-order tree branch, a second-order tree branch and two third-order tree branches; the first-order tree-shaped branch and the second-order tree-shaped branch are symmetrical with the center of the cross-shaped resonator, the two third-order tree-shaped branches are symmetrical with the center of the cross-shaped resonator, and the adjacent branches are spaced by a rotation angle of 120 degrees and keep rotational symmetry of three times; the period of the structural unit of the periodic array is 59-65 mu m, the thickness of the thin film layer of the resonance structure is 0.1-0.3 mu m, the thickness of the optical laser silicon layer is 0.08-0.12 mu m, the thickness of the dielectric layer is 8-12 mu m, and the thickness of the grounding metal layer is 0.1-0.15 mu m; the arm length of the cross-shaped resonator is 38-42 mu m, and the arm width is 1-3 mu m; the arm length of the first-order tree branch is 8-10 mu m, the arm length of the second-order tree branch is 3.6-5.2 mu m, the inner arm length of the third-order tree branch is 5.6-6.0 mu m, and the outer arm length is half of the inner arm length; the arm widths of the first-order tree branch, the second-order tree branch and the third-order tree branch are all 0.95-1.0 μm.
Shape memory alloys have unique functional properties such as superelastic behavior, shape memory effect, and high power. An artificial metamaterial composed of shape memory alloys provides active modulation by exploiting recoverable deformations and phase changes in sub-wavelength structures. However, the martensitic transformation of the conventional thermally driven shape memory alloy is caused by temperature, resulting in a low response frequency. Compared with the traditional thermal control shape memory alloy, the ferromagnetic drive shape memory alloy has higher response frequency, and the output strain of the magnetic induction strain ratio magnetostrictive material and piezoelectric material is more than one order of magnitude higher. Obviously, the magnetic field control mode is more flexible and the speed is higher. By utilizing the characteristic, the NiMnSn alloy and the metamaterial are combined in the embodiment, and the dual modulation of the material characteristic and the material structure under the action of the magnetic field can be realized.
Therefore, the novel metamaterial device based on the Ni-Mn-Sn shape memory alloy film is designed, the dual functions of wide-band and narrow-band absorption dynamic switching and the terahertz switch can be realized by utilizing the adjustability of the phase change and the deformation of the shape memory alloy before and after the martensitic transformation, and the metamaterial device has the advantages of simple design structure, convenience in processing and dynamic adjustability. The method provides another strategy for developing an active adjustable multifunctional terahertz compact device.
The embodiment is based on the reason that the conventional applicable environment temperature of the terahertz device is room temperature, the NiMnSn shape memory alloy is selected to be NiMnSn, and the martensite phase transition temperature of the NiMnSn shape memory alloy is in a room temperature environment.
The second embodiment is as follows: the first difference between the present embodiment and the specific embodiment is: the resonance structure film layer is made of Ni-Mn-Sn shape memory alloy; the dielectric layer is a sapphire dielectric layer, the dielectric constant epsilon =9.7 and the density is 3.97g/cm 3 The reflection loss was 13%. Other steps and parameters are the same as those in the first embodiment.
The third concrete implementation mode: the first or second difference between the present embodiment and the specific embodiment is: the period of the structural units of the periodic array is 60 μm. Other steps and parameters are the same as those in the first or second embodiment.
The fourth concrete implementation mode: the difference between this embodiment mode and one of the first to third embodiment modes is: the thickness of the resonance structure film layer is 0.2 μm. Other steps and parameters are the same as those in one of the first to third embodiments.
The fifth concrete implementation mode: the difference between this embodiment and one of the first to fourth embodiments is: the thickness of the optical laser silicon layer is 0.1 mu m. Other steps and parameters are the same as those in one of the first to fourth embodiments.
The sixth specific implementation mode: the difference between this embodiment and one of the first to fifth embodiments is: the thickness of the dielectric layer is 10 μm. Other steps and parameters are the same as those in one of the first to fifth embodiments.
The seventh embodiment: the difference between this embodiment and one of the first to sixth embodiments is: the grounding metal layer is a metal copper substrate. Other steps and parameters are the same as those in one of the first to sixth embodiments.
The specific implementation mode is eight: the present embodiment differs from one of the first to seventh embodiments in that: the thickness of the grounding metal layer is 0.12 μm. Other steps and parameters are the same as those in one of the first to seventh embodiments.
The specific implementation method nine: the present embodiment differs from the first to eighth embodiments in that: the arm length of the cross-shaped resonator is 40 mu m, and the arm width is 2 mu m; the arm length of the first-order tree branch is 8 micrometers, the arm length of the second-order tree branch is 4.4 micrometers, the inner arm length of the third-order tree branch is 5.8 micrometers, and the outer arm length is half of the inner arm length; the arm widths of the first order tree branch, the second order tree branch and the third order tree branch are all 0.97 mu m. Other steps and parameters are the same as those in one to eight of the embodiments.
The detailed implementation mode is ten: the difference between this embodiment and one of the first to ninth embodiments is that: the first-order tree-shaped branch, the second-order tree-shaped branch and the third-order tree-shaped branch in the multifunctional terahertz metamaterial absorber based on the Ni-Mn-Sn shape memory alloy film respectively use respective centers as original points, and the tilting height of a cantilever beam of the multifunctional terahertz metamaterial absorber is regulated and controlled by applying an external magnetic field; and tuning the warping angle of the cantilever by changing the magnitude of the applied external magnetic field. Other steps and parameters are the same as those in one of the first to ninth embodiments.
According to the embodiment, when a certain external magnetic field is applied, the warping height of the cantilever structure can be regulated, and the warping angle of the NiMnSn alloy film cantilever beam can be flexibly tuned by changing the magnitude of the applied external magnetic field to form different reconstruction states. In addition, the optical field can be used for adjusting and controlling the conductivity of the optical laser silicon. The NiMnSn alloy is prepared into a film, and combined with the metamaterial design, the multi-field regulation and control on the terahertz absorption bandwidth, the intensity and the frequency can be realized under the action of a magnetic field and an optical field.
The beneficial effects of the present invention are demonstrated by the following examples:
the first embodiment is as follows: based on Ni-Mn-Sn shape memory alloy filmsThe multifunctional terahertz metamaterial absorber consists of a resonance structure film layer 1, a laser silicon layer 2, a dielectric layer 3 and a grounding metal layer 4; the resonant structure comprises a thin film layer 1, a laser silicon layer 2, a dielectric layer 3 and a grounding metal layer 4 from top to bottom in sequence; the resonance structure film layer 1 is formed by a periodical array of NxN structural units; the single structural unit consists of a Cayley tree metal resonator and a cross-shaped resonator; the Cayley tree metal resonator consists of a first-order tree branch, a second-order tree branch and two third-order tree branches; the first-order tree-shaped branch and the second-order tree-shaped branch are symmetrical with the center of the cross-shaped resonator, the two third-order tree-shaped branches are symmetrical with the center of the cross-shaped resonator, and the adjacent branches are spaced by a rotation angle of 120 degrees and keep rotational symmetry of three times; the period a of the structural unit of the periodic array is 59 mu m, and the thickness h of the resonance structure thin film layer 1 1 0.2 μm, thickness h of the optically-excited silicon layer 2 2 0.1 μm, the thickness h of the dielectric layer 3 3 10 μm, thickness h of the ground metal layer 4 4 0.1 μm; the arm length l of the cross-shaped resonator is 40 mu m, and the arm width w 1 Is 2 μm; arm length l of the first order tree branch 1 8 μm, arm length l of the second order tree branch 2 4.4 μm, inner arm length l of the third order tree branch 3 5.8 μm, the length of the outer arm is half of the length of the inner arm; the arm widths w of the first order tree branch, the second order tree branch and the third order tree branch are all 0.97 μm.
Fig. 3 to 6 show absorption spectra of first, second, third order Caley trees and cross structures, respectively, which cannot independently realize broadband absorption for each structure, and can realize ultra-wideband absorption by combining the four structures. The results of fig. 7 show that the absorption amplitude of the introduced metamaterial exceeds 90% in the frequency range of 1.950THz to 3.079THz, indicating that the proposed absorbent material has excellent absorption properties. It is worth mentioning that the higher peak absorption rates observed at different frequencies stem from the coupled resonance of the Caley Tree resonators of different orders at the corresponding frequencies. In addition, fig. 8 shows the real part and imaginary part of the effective impedance of the metamaterial broadband absorber, from 1.950THz to 3.079THz, with the real part close to 1 and the imaginary part close to 0. The phenomenon is well matched with the effective impedance and the free space impedance of the introduced metamaterial wave absorber, so that the absorption strength is high.
The embodiment can realize multi-field regulation and control at the same time, and the magnetic drive deformation can be simulated by changing the bending angle of the shape memory alloy during simulation. FIG. 9 shows a schematic diagram of bending deformation of a Cayley tree fractal metamaterial under the action of an external magnetic field, and FIG. 10 shows absorption rates of the Cayley tree fractal Ni-Mn-Sn shape memory alloy metamaterial under different bending angles theta. In the deformation process of the Ni-Mn-Sn Caley tree-shaped metamaterial, the absorption broadband is gradually reduced. When the Ni-Mn-Sn Caley tree fractal material is bent to 50 degrees, the broadband peak disappears. Only a narrow peak is visible, the absorption intensity remains above 90%.
This embodiment can also simulate the phase change by changing the electrical conductivity of the optically active silicon, as can be seen from fig. 11 and 12, and we observe that the absorption of the metamaterial structure is relatively high, about 90%, at a Si conductivity of 1S/m, while the Si conductivity of the introduced metamaterial structure is about 5% at 1 × 106S/m. Thus, in the switching range of 1.129THz, a switching strength amplitude of 90% is obtained.
In addition, we have also investigated the performance of tunable multifunctional materials based on shape memory alloys at oblique incidence. Fig. 3 and 14 show simulation results of different incident angles in TE and TM modes. In the range of 1.95 to 3.08THz, the incident angle curves from 0 to 40 are approximately the same, indicating that the multiple resonant modes have the same interaction state. Therefore, it can be concluded that the device is insensitive to a wide oblique incidence angle, and can realize broadband absorption at multiple angles in practical application.
In conclusion, through the dual regulation and control of the magnetic field and the optical field, the metamaterial can realize the switching of the wide/narrow-band absorption and the dynamic tuning of the absorption rate.
Claims (10)
1. A multifunctional terahertz metamaterial absorber based on a Ni-Mn-Sn shape memory alloy film is characterized in that the multifunctional terahertz metamaterial absorber based on the Ni-Mn-Sn shape memory alloy film is composed of a resonance structure film layer, a light laser silicon layer, a dielectric layer and a grounding metal layer; the resonant structure thin film layer, the optical laser silicon layer, the dielectric layer and the grounding metal layer are arranged from top to bottom in sequence; the resonance structure thin film layer is formed by a periodical array of NxN structural units; the single structural unit consists of a Cayley tree metal resonator and a cross-shaped resonator; the Cayley tree metal resonator consists of a first-order tree branch, a second-order tree branch and two third-order tree branches; the first-order tree-shaped branch and the second-order tree-shaped branch are symmetrical with the center of the cross-shaped resonator, the two third-order tree-shaped branches are symmetrical with the center of the cross-shaped resonator, and the adjacent branches are spaced by a rotation angle of 120 degrees and keep rotational symmetry of three times; the period of the structural unit of the periodic array is 59-65 mu m, the thickness of the thin film layer of the resonance structure is 0.1-0.3 mu m, the thickness of the optical laser silicon layer is 0.08-0.12 mu m, the thickness of the dielectric layer is 8-12 mu m, and the thickness of the grounding metal layer is 0.1-0.15 mu m; the arm length of the cross-shaped resonator is 38-42 mu m, and the arm width is 1-3 mu m; the arm length of the first-order tree branch is 8-10 mu m, the arm length of the second-order tree branch is 3.6-5.2 mu m, the inner arm length of the third-order tree branch is 5.6-6.0 mu m, and the outer arm length is half of the inner arm length; the arm widths of the first-order tree branch, the second-order tree branch and the third-order tree branch are all 0.95-1.0 mu m.
2. The multifunctional terahertz metamaterial absorber based on a Ni-Mn-Sn shape memory alloy thin film as claimed in claim 1, wherein the material of the resonant structure thin film layer is Ni-Mn-Sn shape memory alloy; the dielectric layer is a sapphire dielectric layer, the dielectric constant epsilon =9.7, and the density is 3.97g/cm 3 The reflection loss was 13%.
3. The multifunctional terahertz metamaterial absorber based on the Ni-Mn-Sn shape memory alloy thin film as claimed in claim 1, wherein the period of the structural units of the periodic array is 60 μm.
4. The multifunctional terahertz metamaterial absorber based on the Ni-Mn-Sn shape memory alloy thin film as claimed in claim 1, wherein the thickness of the resonant structure thin film layer is 0.2 μm.
5. The multifunctional terahertz metamaterial absorber based on the Ni-Mn-Sn shape memory alloy thin film as claimed in claim 1, wherein the thickness of the optical laser silicon layer is 0.1 μm.
6. The multifunctional terahertz metamaterial absorber based on the Ni-Mn-Sn shape memory alloy thin film as claimed in claim 1, wherein the thickness of the dielectric layer is 10 μm.
7. The multifunctional terahertz metamaterial absorber based on the Ni-Mn-Sn shape memory alloy thin film as claimed in claim 1, wherein the grounding metal layer is a metal copper substrate.
8. The multifunctional terahertz metamaterial absorber based on the Ni-Mn-Sn shape memory alloy thin film as claimed in claim 1, wherein the thickness of the grounding metal layer is 0.12 μm.
9. The multifunctional terahertz metamaterial absorber based on the Ni-Mn-Sn shape memory alloy thin film as claimed in claim 1, wherein the arm length of the cross-shaped resonator is 40 μm, and the arm width is 2 μm; the arm length of the first-order tree branch is 8 micrometers, the arm length of the second-order tree branch is 4.4 micrometers, the inner arm length of the third-order tree branch is 5.8 micrometers, and the outer arm length is half of the inner arm length; the arm widths of the first order tree branch, the second order tree branch and the third order tree branch are all 0.97 mu m.
10. The multifunctional terahertz metamaterial absorber based on the Ni-Mn-Sn shape memory alloy film as claimed in claim 1, wherein the first-order tree-shaped branch, the second-order tree-shaped branch and the third-order tree-shaped branch in the multifunctional terahertz metamaterial absorber based on the Ni-Mn-Sn shape memory alloy film respectively use the respective centers as the original points, and the tilting height of the cantilever beam is adjusted and controlled by applying an external magnetic field; and tuning the warping angle of the cantilever by changing the magnitude of the applied external magnetic field.
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