CN115185164A - 一种彩虹膜制作方法 - Google Patents
一种彩虹膜制作方法 Download PDFInfo
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- CN115185164A CN115185164A CN202210813486.5A CN202210813486A CN115185164A CN 115185164 A CN115185164 A CN 115185164A CN 202210813486 A CN202210813486 A CN 202210813486A CN 115185164 A CN115185164 A CN 115185164A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/40—Coatings including alternating layers following a pattern, a periodic or defined repetition
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
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- G03F7/32—Liquid compositions therefor, e.g. developers
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- G—PHYSICS
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
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Abstract
本发明公开了一种彩虹膜制作方法,包括如下步骤:S1:将基材平铺,在基材表面镀制具有折射率的单层膜;S2:清洁S1步骤镀制的膜面,在膜面上均匀旋涂光刻胶;S3:采用光刻机对基材进行曝光;S4:将曝光后的单层膜置于溶液中显影得到所需的掩膜图样;S5:采用反应离子束刻蚀技术将掩膜图样转移至单层膜上,控制刻蚀时间达到所需微结构的高度和形状;S6:清洁刻蚀产生的残留物。与现有技术相比,本发明的有益效果是:通过光刻机刻印工艺,使得膜体上产生圆柱形、圆锥形、抛物型或者金字塔型结构,当光线打在圆柱形、圆锥形、抛物型或者金字塔型结构上时,通过光线的反射和衍射作用会会产生彩色光芒。
Description
技术领域
本发明涉及膜体加工技术领域,具体为一种彩虹膜制作方法。
背景技术
由于科技的进步及社会的发展,电子产品除了产品本身功能加强外,其外观的视觉效果也成为整体评价的指标之一。特殊的视觉效果也对其外壳表面装饰也提出了更高的要求。
目前一般采用在外壳表面进行电镀、涂敷涂料等多种装饰手段,但是电镀色彩比较单一,不够亮丽,涂覆的耐磨性和稳定性差。针对上述问题,急需在原有涂料制备方法的基础上进行创新设计。
发明内容
本发明的目的在于提供一种彩虹膜制作方法,以解决上述背景技术提出的目前一般采用在外壳表面进行电镀、涂敷涂料等多种装饰手段,但是电镀色彩比较单一,不够亮丽,涂覆的耐磨性和稳定性差的问题。
为实现上述目的,本发明提供如下技术方案:一种彩虹膜制作方法,包括如下步骤:
S1:将基材平铺,在基材表面镀制具有折射率的单层膜;
S2:清洁S1步骤镀制的膜面,在膜面上均匀旋涂光刻胶;
S3:采用光刻机对基材进行曝光;
S4:将曝光后的单层膜置于溶液中显影得到所需的掩膜图样;
S5:采用反应离子束刻蚀技术将掩膜图样转移至单层膜上,控制刻蚀时间达到所需微结构的高度和形状;
S6:清洁刻蚀产生的残留物。
优选的,所述步骤S1中基材表面镀上具有折射率的材料层由高折射率材料层和低折射率材料层交替组成。
优选的,所述步骤S3中的光刻机为40nm光刻机。
优选的,所述步骤S4中的溶液为NaOH溶液。
优选的,所述步骤S5中微结构的形状为圆柱形、圆锥形、抛物型或者金字塔型。
与现有技术相比,本发明的有益效果是:该彩虹膜制作方法,通过光刻机刻印工艺,使得膜体上产生圆柱形、圆锥形、抛物型或者金字塔型结构,当光线打在圆柱形、圆锥形、抛物型或者金字塔型结构上时,通过光线的反射和衍射作用会会产生彩色光芒。
具体实施方式
下面将结合本发明实施例,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。
一种彩虹膜制作方法,包括如下步骤:
S1:将基材平铺,在基材表面镀制具有折射率的单层膜,基材表面镀上具有折射率的材料层由高折射率材料层和低折射率材料层交替组成;
S2:清洁S1步骤镀制的膜面,在膜面上均匀旋涂光刻胶;
S3:采用光刻机对基材进行曝光,其中光刻机为40nm光刻机;
S4:将曝光后的单层膜置于溶液中显影得到所需的掩膜图样,其中溶液为NaOH溶液;
S5:采用反应离子束刻蚀技术将掩膜图样转移至单层膜上,控制刻蚀时间达到所需微结构的高度和形状,其中微结构的形状为圆柱形、圆锥形、抛物型或者金字塔型;
S6:清洁刻蚀产生的残留物。
尽管参照前述实施例对本发明进行了详细的说明,对于本领域的技术人员来说,其依然可以对前述各实施例所记载的技术方案进行修改,或者对其中部分技术特征进行等同替换,凡在本发明的精神和原则之内,所作的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。
Claims (5)
1.一种彩虹膜制作方法,其特征在于,包括如下步骤:
S1:将基材平铺,在基材表面镀制具有折射率的单层膜;
S2:清洁S1步骤镀制的膜面,在膜面上均匀旋涂光刻胶;
S3:采用光刻机对基材进行曝光;
S4:将曝光后的单层膜置于溶液中显影得到所需的掩膜图样;
S5:采用反应离子束刻蚀技术将掩膜图样转移至单层膜上,控制刻蚀时间达到所需微结构的高度和形状;
S6:清洁刻蚀产生的残留物。
2.根据权利要求1所述的一种彩虹膜制作方法,其特征在于:所述步骤S1中基材表面镀上具有折射率的材料层由高折射率材料层和低折射率材料层交替组成。
3.根据权利要求1所述的一种彩虹膜制作方法,其特征在于:所述步骤S3中的光刻机为40nm光刻机。
4.根据权利要求1所述的一种彩虹膜制作方法,其特征在于:所述步骤S4中的溶液为NaOH溶液。
5.根据权利要求1所述的一种彩虹膜制作方法,其特征在于:所述步骤S5中微结构的形状为圆柱形、圆锥形、抛物型或者金字塔型。
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