CN115181948A - W-Si-B hard coating and preparation method and application thereof - Google Patents
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- 238000000576 coating method Methods 0.000 title claims abstract description 119
- 239000011248 coating agent Substances 0.000 title claims abstract description 104
- 229910008423 Si—B Inorganic materials 0.000 title claims abstract description 40
- 238000002360 preparation method Methods 0.000 title abstract description 7
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 238000000034 method Methods 0.000 claims abstract description 14
- 238000000151 deposition Methods 0.000 claims abstract description 13
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 13
- 230000008021 deposition Effects 0.000 claims abstract description 11
- 239000000956 alloy Substances 0.000 claims abstract description 4
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 26
- 229910052786 argon Inorganic materials 0.000 claims description 13
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 8
- 239000013077 target material Substances 0.000 claims description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 6
- 238000005516 engineering process Methods 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 5
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 238000001816 cooling Methods 0.000 claims description 3
- 238000005498 polishing Methods 0.000 claims description 3
- 235000019441 ethanol Nutrition 0.000 claims description 2
- 238000010926 purge Methods 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims 3
- 238000011160 research Methods 0.000 abstract description 6
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 238000002441 X-ray diffraction Methods 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000000227 grinding Methods 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 2
- 238000000026 X-ray photoelectron spectrum Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910008482 TiSiN Inorganic materials 0.000 description 1
- 238000005280 amorphization Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
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- 238000005137 deposition process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000004471 energy level splitting Methods 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000004050 hot filament vapor deposition Methods 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- QRXWMOHMRWLFEY-UHFFFAOYSA-N isoniazide Chemical compound NNC(=O)C1=CC=NC=C1 QRXWMOHMRWLFEY-UHFFFAOYSA-N 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002159 nanocrystal Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
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- 238000004626 scanning electron microscopy Methods 0.000 description 1
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- 238000004544 sputter deposition Methods 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/067—Borides
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention discloses a W-Si-B hard coating and a preparation method thereof, belonging to the technical field of hard wear-resistant coatings. The W-Si-B hard coating is prepared on the YG8 hard alloy by adopting a direct current magnetron sputtering process and regulating parameters such as Si target current, substrate bias voltage, deposition temperature and the like. The coating has higher hardness and toughness and better wear resistance. The coating provided by the invention can obviously improve the hardness and wear resistance of the surface of a workpiece or a cutter, and has important significance for theoretical research and practical application of a boride hard coating.
Description
Technical Field
The invention relates to the technical field of hard wear-resistant coatings, in particular to a W-Si-B hard coating and a preparation method and application thereof.
Background
The superhard material is widely applied to the fields of cutting processing industry, die industry, geological drilling, aerospace and the like. However, with the rapid development of modern industry, some traditional tool materials cannot meet the increasingly complex cutting performance requirements. The surface protection is an effective way for improving the performances of the material such as hardness, wear resistance and the like on the premise of not changing the matrix material. Hard wear coatings are a common surface protection technique.
In recent years, alB in boride hard coatings 2 Type WB 2 The super-hard coating is considered to have great potential and becomes a new research hotspot. AlB was first prepared by hot filament chemical vapor deposition by Woods et al in 1966 2 Type WB 2 However, WBs prepared by this method 2 The material is in a loose porous structure, and performance research cannot be carried out. Thereafter, for AlB 2 Type WB 2 The research focus of (1) is mostly on the preparation of the block, but theoretical calculation shows that AlB 2 Type WB 2 Is a high pressure phase and therefore attempts by researchers to make this phase using powder metallurgy have all failed. In 2013, jiang et al successfully prepared smooth, compact and high-hardness AlB for the first time by a direct-current magnetron sputtering method 2 Type WB 2 Coating and researching the relevant physical properties. To improve AlB 2 Type WB 2 Properties of the coatings, researchers have attempted to do in AlB 2 Type WB 2 On the basis of the coating, elements such as C and N are doped to improve the hardness and the wear resistance of the coating, but the problems of poor toughness and the like of the coating still cannot be changed.
Si element is often used as a doping element of the traditional nitride hard wear-resistant coating to improve the mechanical property and wear resistance of the coating, for example, the comprehensive performance of a TiSiN coating prepared by doping Si element in a TiN coating is obviously improved compared with a simpler TiN coating. Therefore, the W-Si-B hard coating is prepared by doping the Si element, the comprehensive performance of the coating can be improved, and the method has important significance for theoretical research and practical application of the hard boride coating.
Disclosure of Invention
The invention aims to provide a W-Si-B hard coating, a preparation method and application thereof, wherein the coating can obviously improve the surface hardness and the wear resistance of a cutter or a workpiece.
In order to realize the purpose, the technical scheme adopted by the invention is as follows:
a W-Si-B hard coating which is doped with Si elementAlB 2 Type WB 2 The Si doping amount of the coating is 2.0-25.1 at.%, and the Si doping amount in the coating is preferably 2.0-7.0 at.%.
The thickness of the coating is 1-4 mu m, the hardness of the coating exceeds 35GPa, and the wear rate is as low as 1.3 x 10 -7 mm 3 /Nm。
The preparation method of the W-Si-B hard coating uses WB 2 Type WB 2 The target material and the Si target material adopt a direct current magnetron sputtering technology, and a W-Si-B hard coating is prepared on the YG8 hard alloy substrate by controlling the current of the Si target material, the bias voltage of the substrate and the deposition temperature. The method specifically comprises the following steps:
(1) Glow cleaning: putting the pretreated substrate into a vacuum chamber of a direct current magnetron sputtering device until the vacuum degree in the chamber reaches 4 multiplied by 10 -3 ～1×10 -2 When Pa is needed, argon is introduced, the pressure of the argon is controlled to be 1-3 Pa, then the substrate is opened and biased to-1000V, so that the argon generates glow discharge, and the substrate is subjected to glow cleaning for 30 minutes;
(2) Depositing the W-Si-B hard coating by adopting a direct current magnetron sputtering technology, wherein the technological parameters are as follows: argon pressure is 0.5-0.9Pa 2 The power of the target material is set to be 200-300W, the current of the Si target is 40-500 mA, the bias voltage of the substrate is-50-200V, the target base distance is 50-100 mm, and the deposition temperature is 300-500 ℃;
(3) And after the deposition is finished, stopping introducing the argon, closing the substrate bias power supply, closing the magnetron sputtering power supply, continuously vacuumizing, cooling the sample to below 50 ℃ along with the furnace, and taking the sample out of the cavity.
The WBs 2 In the chemical components of the target material, the ratio of the atomic percent content of B to W is 2.
Preferably, the pretreatment process of the substrate in step (1) is as follows: polishing the substrate until Ra is less than or equal to 0.4 mu m, then carrying out ultrasonic cleaning on the sample substrate, respectively carrying out ultrasonic cleaning in acetone and absolute ethyl alcohol for 15 minutes, rinsing with acetone and absolute ethyl alcohol after cleaning, and purging residual alcohol by using high-pressure nitrogen until the surface of the substrate is clean.
Preferably, in step (2), the deposition time is set according to the desired coating thickness.
The hard coating is applied to the protection of the surface of a cutter or a workpiece.
The invention has the following advantages:
1. the invention relates to a W-Si-B hard coating synthesized on the surface of hard alloy, the hardness of the coating can reach more than 35GPa, and the toughness is better than that of pure AlB 2 Type WB 2 Coating and has good tribological properties (wear rate is as low as 1.3X 10) -7 mm 3 /Nm)。
2. The invention proves WB 2 Possibility of synthesizing high-pressure phase and its doping under low-temperature and low-pressure conditions.
3. The W-Si-B hard coating can be applied to the protection of the surfaces of cutters or workpieces, and the service life of the W-Si-B hard coating can be effectively prolonged.
Drawings
FIG. 1 is an X-ray diffraction spectrum of W-Si-B hard coatings with different Si contents.
FIG. 2 is an X-ray photoelectron spectrum of a W-Si-B hard coating having a Si content of 2.7 at.%; wherein: (a) W4 f; (B) B1 s; (c) Si 2p.
FIG. 3 is a cross-sectional scanning electron microscopy topographic map of a W-Si-B hard coating; wherein: (a) - (f) are different Si contents.
FIG. 4 is a graph of hardness H and Young's modulus E of W-Si-B hardcoats of varying Si content.
FIG. 5 is H of W-Si-B hard coatings of varying Si content 3 /E 2 And W e 。
FIG. 6 shows the wear rate and average coefficient of friction for W-Si-B hard coatings of different Si content.
Detailed Description
The present invention will be described in detail with reference to the following embodiments and accompanying drawings.
Example 1:
the substrate was made of YG8 cemented carbide. The surface is subjected to grinding, polishing, ultrasonic cleaning and drying pretreatment before film coating, and then is placed on a sample table in a vacuum chamber, and the vacuum degree in the vacuum chamber reaches 4 multiplied by 10 -3 When Pa is needed, the gas mass flow controller is opened, argon is introduced to 3.0Pa, the duty ratio of the substrate pulse is 30 percent, and the frequency is 50kHz and 1000VThe substrate was cleaned for 30 minutes with pulsed dc bias. Then entering a coating deposition process, wherein the specific process parameters are as follows: the working pressure of argon is 0.4Pa, WB 2 The target current is set to 500mA, the Si target current is changed to 0mA, 50mA, 100mA, 200mA, 300mA and 500mA respectively, the substrate bias voltage is minus 50V, the distance between the target and the substrate is kept to be 70mm, the deposition temperature is 450 ℃, the sputtering time is controlled within 120-150 minutes, and the coating thickness is ensured to be about 3 mu m. And after the deposition is finished, stopping introducing the argon, closing the substrate bias power supply, closing the magnetron sputtering power supply, continuing vacuumizing, cooling the sample to below 50 ℃ along with the vacuum chamber, and taking the sample out of the cavity.
The Si element content in the coating gradually increased from 0 to 25.1at.% with increasing Si target current. The X-ray diffraction (XRD) pattern of the coating is shown in FIG. 1, and pure WB is deposited when the Si target current is 0 2 Two main diffraction peaks, 2 θ =20.06 ° and 2 θ =60.37 °, respectively, can be detected in the coating, corresponding to AlB 2 Type WB 2 The (001) and (002) of the coating are preferentially oriented. According to the orientation evolution model in the coating growth, the concentration of atoms or ions on the surface of the deposit determines the growth direction of the coating, when the concentration is low, the coating grows along the direction of minimum surface energy, and when the concentration is too high, the coating grows along the direction of higher surface energy. Under a negative bias applied to the substrate, positive ions in the plasma generated during magnetron sputtering are readily attracted to the substrate and transfer kinetic energy to the deposited atoms, thereby increasing the concentration of deposited atoms reaching the growth surface. Therefore, the-50V substrate bias chosen here is due to the lower voltage, lower particle concentration at the surface of the deposit, and therefore the preferred orientation of the coating is the low energy (001) plane in a simple hexagonal structure. When the Si content in the W-Si-B coating is not higher than 6.4at.%, the (001) and (002) diffraction peaks remain the dominant preferred orientations of the coating. When the Si content reaches 10.5at.%, the whole WB of the coating 2 The diffraction peaks disappear, and the coating appears amorphous, because too many Si atoms in the coating affect WB 2 Nucleation and growth of crystal grains.
For W-Si-B coatings with Si contents of 2.7 to 25.1at.%, nothing is said about Si simple substance or combinationThe XRD diffraction peak of the product was analyzed by X-ray photoelectron spectroscopy (XPS) for the chemical bond composition of Si element in order to determine the existence form of Si element. The peak separation results of XPS spectra for W4f, B1s and Si 2p in W-Si-B coatings with Si content of 2.7at.% are shown in fig. 2. Two groups of peaks generated by energy level splitting exist in the W4 f map, namely WB with 31.25eV for W4 f 7/2 and WB with 33.4eV for W4 f 5/2 2 Peaks and pure W peaks with W4 f 7/2 of 31.6eV and W4 f 5/2 of 33.75 eV; the B1 s spectrum has two peaks which are respectively WB of 188.1eV 2 Peaks and a BN peak of 191 eV; the Si 2p spectrum has two peaks, namely a pure Si peak of 99.67eV and a Si peak of 101.5eV 3 N 4 Peak(s). This indicates that the coating is other than WB 2 Besides the phases, an amorphous free simple substance W phase and a BN phase exist; the Si element mainly exists in a free amorphous Si phase, and simultaneously, a small part of amorphous Si exists 3 N 4 And (4) phase(s). Wherein BN and Si 3 N 4 The N element in the vacuum chamber is derived from residual nitrogen in the back vacuum in the vacuum chamber.
The cross-sectional morphology of the coating was observed using a Scanning Electron Microscope (SEM), and the results are shown in fig. 3. The thickness of the coating is about 3 mu m, and all the coatings are in a compact and defect-free state. For coatings with Si content not higher than 6.4at.%, although WB is present 2 But since the crystal grains are all fine nanocrystals wrapped in an amorphous state, no obvious columnar crystal structure is observed in the coating. For the coating with the Si content of more than 6.4at.%, the coating is mainly in a compact structure due to the main amorphous state, so that the cross-sectional appearance of the coating has no obvious contrast.
The hardness H and young's modulus E of the deposited coatings were measured in Continuous Stiffness Mode (CSM) using a nanoindenter. A fused silica standard sample was used to correct the indenter area function. The average value of indentation depth within 100-200 nm is taken as the hardness and Young's modulus of the coating to avoid the influence of the substrate effect. As shown in FIG. 4, the hardness and Young's modulus of the coating both increased and decreased with the increase of Si content, and reached maximum values of 35.8GPa and 450.9GPa with Si content of 4.7at.%, respectively, because the doping of a small amount of Si is nanocrystalline WB in the coating 2 Form a nanocrystalline/amorphous complex with amorphous SiThe complex structure and the amorphous Si pinning inhibit the movement of dislocation and improve the hardness of the coating. As the Si content increases, the increase in the soft phase content decreases the hardness of the coating. Combined with XRD results, due to amorphous WB 2 Coating hardness lower than (001) oriented WB 2 The coating, the amorphization of the coating caused by the higher Si content also reduces the hardness of the coating.
Studies have shown that the ratio of the third power of the hardness of the coating to the square of the modulus of elasticity, i.e., H 3 /E 2 And elastic recovery W as determined from the load-displacement orientation during nanoindentation e All of which can characterize the change in toughness of the coating. H 3 /E 2 Can reflect the ability of the coating to resist plastic deformation, and W e The value of (a) may be used to assess the crack propagation resistance of the coating to some extent. W-Si-B coating H 3 /E 2 And W e The results with the Si content in the coating are shown in fig. 5, both of which show a tendency to increase and then decrease with the increase of the Si element content, indicating that the toughness of the coating also increases and then decreases. The W-Si-B coating with an elemental Si content of 4.7at.% has the highest H 3 /E 2 And W e The values show that it has a higher resistance to crack propagation. The film has a nano-crystalline/amorphous composite structure, and amorphous Si wraps the nano-crystalline WB 2 The system makes dislocation activity in the nanocrystalline lost, and simultaneously a high-strength interface is formed between two phases, so that the formation and the expansion of cracks can be reduced.
The tribological properties of the coatings were evaluated using a ball and disk type friction wear tester. The load is 2N, and the opposite grinding pair is Al 2 O 3 Grinding balls at the rotation speed of 200 rpm for 120 minutes. FIG. 6 shows the wear rates of W-Si-B hard coatings with different Si contents. For the W-Si-B coating doped with Si element, the frictional wear performance can be improved due to the relatively high hardness, and the coating has high H 3 /E 2 And W e The value of the anti-crack propagation property is higher, so that the wear rate is far lower than that of pure WB 2 And (4) coating.
The results of the examples show that the W-Si-B hard coating is prepared by the magnetron sputtering technology under the non-equilibrium condition, the coating has high hardness, higher toughness and excellent wear resistance, the hardness and the wear resistance of the surface of a cutter or a workpiece can be obviously improved, and the method has important significance for theoretical research and practical application of the superhard boride coating.
Claims (9)
1. A W-Si-B hard coating characterized by: the W-Si-B hard coating is AlB doped with Si element 2 Type WB 2 Coating, the doping amount of Si is 2.0-25.1 at.%.
2. The W-Si-B hard coating of claim 1, characterized in that: the doping amount of Si in the coating is 2.0-7.0 at.%.
3. The W-Si-B hard coating of claim 1 characterized in that: the thickness of the coating is 1-4 mu m, the hardness of the coating exceeds 35GPa, and the wear rate is as low as 1.3 multiplied by 10 -7 mm 3 /Nm。
4. The method for producing a W-Si-B hard coating according to claim 1, characterized in that: the method uses WB 2 Type WB 2 The target material and the Si target material adopt a direct current magnetron sputtering technology, and a W-Si-B hard coating is prepared on the YG8 hard alloy substrate by controlling the current of the Si target material, the bias voltage of the substrate and the deposition temperature.
5. The method for producing a W-Si-B hard coating according to claim 4, characterized in that: the method comprises the following steps:
(1) Glow cleaning: putting the pretreated substrate into a vacuum chamber of a direct current magnetron sputtering device until the vacuum degree in the chamber reaches 4 multiplied by 10 -3 ～1×10 -2 When Pa is needed, argon is introduced, the pressure of the argon is controlled to be 1-3 Pa, then the substrate is opened and biased to-1000V, so that the argon generates glow discharge, and the substrate is subjected to glow cleaning for 30 minutes;
(2) Depositing the W-Si-B hard coating by adopting a direct current magnetron sputtering technology, wherein the technological parameters are as follows: argon gasThe air pressure is 0.5-0.9Pa, the WB 2 The power of the target is set to be 200-300W, the current of the Si target is 40-500 mA, the bias voltage of the substrate is-50-200V, the target-substrate distance is 50-100 mm, and the deposition temperature is 300-500 ℃;
(3) And after the deposition is finished, stopping introducing the argon, closing the substrate bias power supply, closing the magnetron sputtering power supply, continuing vacuumizing, cooling the sample to below 50 ℃ along with the furnace, and taking the sample out of the cavity.
6. The method of producing a W-Si-B hard coating according to claim 4, characterized in that: the WBs 2 In the chemical components of the target, the ratio of the atomic percent content of B to W is 2.
7. The method of producing a W-Si-B hard coating according to claim 5, characterized in that: the pretreatment process of the base material in the step (1) comprises the following steps: polishing the substrate until Ra is less than or equal to 0.4 mu m, then carrying out ultrasonic cleaning on the sample substrate, respectively carrying out ultrasonic cleaning in acetone and absolute ethyl alcohol for 15 minutes, rinsing by using the acetone and the absolute ethyl alcohol after cleaning, and purging residual alcohol by using high-pressure nitrogen until the surface of the substrate is clean.
8. The method for producing a W-Si-B hard coating according to claim 5, characterized in that: in step (2), the deposition time is set according to the desired coating thickness.
9. Use of a W-Si-B hard coating according to claim 1, characterized in that: the hard coating is applied to the protection of the surface of a cutter or a workpiece.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104513954A (en) * | 2013-09-26 | 2015-04-15 | 中国科学院金属研究所 | AlB2 type WB2 hard coating and preparation technology thereof |
| CN106148894A (en) * | 2015-04-17 | 2016-11-23 | 中国科学院金属研究所 | A kind of W-B-C hard coat and its preparation method and application |
| CN108130518A (en) * | 2017-12-26 | 2018-06-08 | 西安石油大学 | A kind of AlB with high high-temp stability2Type WB2(N) ganoine thin film and preparation method thereof |
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- 2022-07-06 CN CN202210798530.XA patent/CN115181948A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104513954A (en) * | 2013-09-26 | 2015-04-15 | 中国科学院金属研究所 | AlB2 type WB2 hard coating and preparation technology thereof |
| CN106148894A (en) * | 2015-04-17 | 2016-11-23 | 中国科学院金属研究所 | A kind of W-B-C hard coat and its preparation method and application |
| CN108130518A (en) * | 2017-12-26 | 2018-06-08 | 西安石油大学 | A kind of AlB with high high-temp stability2Type WB2(N) ganoine thin film and preparation method thereof |
Non-Patent Citations (1)
| Title |
|---|
| JI CHENG DING ET.AL.: "Influence of Si addition on structure and properties of TiB2-Si nanocomposite coatings deposited by high-power impulse magnetron sputtering", 《CERAMICS INTERNATIONAL》, vol. 45, no. 5, XP093016932, DOI: 10.1016/j.ceramint.2018.12.122 * |
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