CN108130518A - A kind of AlB with high high-temp stability2Type WB2(N) ganoine thin film and preparation method thereof - Google Patents
A kind of AlB with high high-temp stability2Type WB2(N) ganoine thin film and preparation method thereof Download PDFInfo
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- CN108130518A CN108130518A CN201711435161.3A CN201711435161A CN108130518A CN 108130518 A CN108130518 A CN 108130518A CN 201711435161 A CN201711435161 A CN 201711435161A CN 108130518 A CN108130518 A CN 108130518A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/067—Borides
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Abstract
A kind of AlB with high high-temp stability2Type WB2(N) ganoine thin film and preparation method thereof is carried out using reaction magnetocontrol sputtering technology, selects WB2Type WB2As target（99.9 wt.% of purity, B, W atomic ratio 2）, high-purity Ar and N2As working gas, depositing temperature, target power output and substrate bias are strictly regulated and controled in membrane-film preparation process, control total working pressure is 0.5 Pa, N2It divides as 0.005 Pa, the N content in film is made to control in 4.5 at.% or so, film is with h WB2The AlB of/a BN composite constructions2Type WB2(N) film.WB of the present invention2(N) ganoine thin film preparation process is simple, reproducible；The WB prepared2(N) organization structure of film is fine and close, surface is smooth, has good high high-temp stability, high temperature hardness, relatively low wear rate, and film corrosion resistance is strong.
Description
Technical field
The present invention relates to a kind of ganoine thin films and preparation method thereof, and in particular to a kind of AlB with high high-temp stability2
Type WB2(N) ganoine thin film and preparation method thereof.
Background technology
AlB2Type WB2Film is a kind of novel super-hard film, have high rigidity, high fusing point, chemical inertness and thermal conductivity,
And WO can be formed in wear processxAnd H3BO3Make it have good self lubricity, and with the films phase such as traditional TiN, TiAlN
Than, chemical affinity is low between the nonferrous metal and alloys such as titanium, aluminium, as hard, wear-resistant film will in high-speed cutting, dry cut
It cuts, micro- lubrication Cutting Process and the cutting tool field of light metal show wide application prospect.In recent years, AlB2Type
WB2Film has become the research hotspot of calculating and experimental field.Woods in 1966 et al. uses Hot Filament Chemical Vapor for the first time
Deposition prepares AlB2Type WB2Film, but film is loose porous, and some researchers attempt to prepare using powder metallurgic method later
The phase, but all fall throughs, because theoretical calculation shows AlB2Type WB2It is a kind of high pressure phase.Until 2013, Jiang etc. was logical
The method of magnetically controlled DC sputtering is crossed 680oC prepares smooth fine and close, high rigidity AlB2Type WB2Film.But Jiang
Depositing temperature is excessively high, it is difficult to promote in the industry.Liu prepares AlB to magnetron sputtering method later2Type WB2The technological parameter of film
It is optimized, and passing through doping makes the mechanics of film and tribological property be largely increased.But to hard, wear-resistant film
For, in addition to as the mechanical property required by general ganoine thin film and tribological property, high high-temp stability also seriously affects
Its performance.And AlB2Type WB2It will be undergone phase transition at 700 DEG C, this just greatly limits AlB2Type WB2The application of film
Field.
For the diboride of magnesium-yttrium-transition metal（TmB2）For, it is considered that introducing N element can effectively influence thin
Structure, phase composition and ingredient of film etc., and then influence mechanics, tribology and the high-temperature thermal stability performance of film.With following excellent
Point：（1）The solution strengthening of N atoms can improve the hardness of Tm-B-N films；（2）N element can react with B, generation heat
Mechanics stable phase h-BN, and h-BN has layer structure and relatively low hardness, thus it is considered to improve the self-lubricating of film
Characteristic；（3）By optimizing N content, it can make film that there is h-WB2/ a-BN nano composite structures improve the hardness of film and tough
Property, while boron compound is nitrogenized with higher thermal stability and antioxygenic property, suitable BN is by being gathered in thin film grain-boundary
Nearby improve its thermal stability and antioxygenic property；（4）Mixing N can make film finer and close, so as to reduce etching channels, and then
Improve film corrosion resistance；（5）N2It is cheap for other gases, it is easy acquisition and it is safe to use.Therefore, in WB2It is thin
N is mixed in film and prepares AlB2Type WB2(N) film is remarkably improved AlB2Type WB2Hardness, wearability and the thermal stability of film.Cause
This, the work of this respect will be for AlB2Type WB2(N) theoretical research of ganoine thin film and practical application are of great significance.
Invention content
In order to overcome the above-mentioned deficiencies of the prior art, the purpose of the present invention is to provide one kind to have high rigidity, low abrasion
And the AlB of good high high-temp stability2Type WB2(N) ganoine thin film and preparation method thereof.Existed using reaction magnetocontrol sputtering technology
A kind of AlB with high high-temp stability is deposited on workpiece2Type WB2(N) ganoine thin film has h-WB2/ a-BN is nano combined
Structure is that more soft a-BN phases is prevented to be greatly reduced so as to improve the hardness of film, frictional behaviour and thermal stability
Film hardness need to strictly regulate and control Ar and N2The technological parameters such as partial pressure, depositing temperature and substrate bias, reach thin film composition,
Effective control of structure and performance.
To achieve these goals, the technical solution adopted by the present invention is：
A kind of AlB with high high-temp stability2Type WB2(N) ganoine thin film, the WB2(N) ganoine thin film selects WB2Type WB2
Compound target is deposited on cemented carbide base material or Si plate substrates, WB2(N) ganoine thin film is with AlB2The N doping of structure
WB2Film, film densification is smooth, and thickness is 1.5 ~ 2.5 μm, and phase transition temperature is up to 1000 DEG C, room temperature hardness 38 ~ 41
GPa, 36 ~ 42 GPa of high temperature hardness.
The WB2(N) N content in film is 4.5 at.%, and film has crystalline A lB2Type WB2Phase and amorphous BN phases
H-WB2/ a-BN nano composite structures.
A kind of AlB with high high-temp stability2Type WB2(N) preparation method of ganoine thin film, using magnetically controlled DC sputtering
Technology prepares the WB2(N) film includes the following steps
1）Base material pre-processes：Base material is subjected to mechanical lapping and polishing, is then respectively cleaned by ultrasonic 15 with acetone and alcohol in succession
Min is put into after drying on the sample stage of DC magnetron sputtering device, and setting target-substrate distance is 50 ~ 80 mm；Treat vacuum house vacuum
Degree reaches 9 × 10-3~5×10-3Start heating system, heating furnace chamber to 200 ~ 500 oC, when base vacuum is evacuated to 1 × 10 during Pa-3~3×10-3During Pa, the Ar that purity is more than 99.99% is passed through, it is inclined to be then turned on matrix in 0.8~2 Pa for Ar pressure controls
The V of -100V~-300 is depressed into, 5~15 min of sputter clean is carried out to base material；
2）Target pre-processes：Target power supply is opened, applies the electric current of 1 ~ 1.5 A, 10 ~ 15 min of pre-sputter cleaning is carried out to target,
Remove the impurity such as the oxide of target material surface；
3）Deposit WB2(N) ganoine thin film：WB2(N) film is deposited on hard alloy or Si sheet matrixes using magnetron sputtering technique
On, deposition process technological parameter is：Total working pressure is 0.5 Pa, wherein by the way that mass flowmenter is controlled to make N2It divides and is
0.005 Pa, setting target current are 0.5 A, corresponding 350 V of target voltage, and matrix pulsed bias is -50 ~ -100 V, duty ratio 20 ~
40 %, 400 ~ 500 DEG C of depositing temperature；
4）After deposition, stopping is passed through N2With Ar gases, substrate bias, shielding power supply switch and heating system are closed, is continued
It vacuumizes, until gained film sample cools to 50 DEG C with the furnace hereinafter, taking-up sample, is made AlB2Type WB2(N) ganoine thin film.
The step（2）The WB of middle use2The chemical composition of target is：The ratio of the atomic percentage content of B and W is 2.
The WB2(N) film selects then WB2Type WB2Compound is target, using reaction magnetocontrol sputtering technology in Ar/N2It is mixed
It closes under atmosphere, by strictly controlling N2With the technological parameters such as Ar flows, depositing temperature, target power output and substrate bias reach film into
Point, effective control of structure and performance.
The step 1）, step 2）In target and matrix between a metal baffle is set, impurity is avoided to be deposited on base
Body surface face, treats step 2）At the end of, baffle is removed by baffle regulator control system.
The step 3）In, sedimentation time is set according to required film thickness.
Invention has the following advantages：
1st, WB prepared by the present invention2(N) ganoine thin film thickness uniformly and compact structure, 38 ~ 41 GPa of room temperature hardness, low wear rate
（1.7~2.2 × 10-7 mm3/mN）, corrosion resisting property is good.
2nd, WB prepared by the present invention2(N) ganoine thin film have higher high high-temp stability, about 1000 DEG C of phase transition temperature,
36 ~ 42 GPa of high temperature hardness.
3rd, the WB that the present invention develops2(N) ganoine thin film preparation process is simple, reproducible, has stronger practicability.
Description of the drawings：
Fig. 1 is WB prepared by the present invention2(N) the XPS collection of illustrative plates of (a) W 4f, (b) B 1s and (c) N 1s of film.
Fig. 2 (a) is the WB deposited using the prior art in Si on pieces2X of the film at different temperatures after vacuum annealing is penetrated
Line diffraction spectra；(b) WB prepared for the present invention2(N) the film X-ray diffraction spectrum after vacuum annealing at different temperatures.
Fig. 3 is the WB deposited in Si on pieces2Film is in 800 DEG C of (a), 900 DEG C of (b), 1000 DEG C of (c) and WB2(N) film exists
(d) 800 DEG C, 900 DEG C of (e), the surface topography map after 1000 DEG C of (f) annealing.
Fig. 4 is WB prepared by the present invention2(N) nano-indentation hardness after film is annealed at different temperatures.
Specific embodiment：
The present invention is described in further details below by example.
Embodiment 1
Base material uses Si pieces and YG8 hard metal tips.Rubbing down first is carried out to substrate before plated film, later with acetone and alcohol to substrate
It carrying out being cleaned by ultrasonic each 15 min, be put on the sample stage of DC magnetron sputtering device after drying, setting target-substrate distance is 60 mm,
With the block WB of 99.99 wt.% purity2Type WB2Compound is as target, and the atomic ratio of B and W is 2 in target.It treats in vacuum chamber
Vacuum degree reaches 5 × 10-3 Start heating system, heating furnace chamber to 400 oC, when base vacuum is evacuated to 1 × 10 during Pa-3During Pa,
The Ar that purity is more than 99.99% is passed through, Ar air pressures are 2 Pa, are then turned on substrate bias extremely -200 V and base material is sputtered
Clean 10 min.Target power supply is opened later, applies the electric current of 1 A, and 15 min of pre-sputter cleaning is carried out to target, removes target table
Then the impurity such as the oxide in face open baffle and carry out WB2(N) deposition of ganoine thin film.Set N2Total gas pressure with Ar is 0.5
Pa controls N by regulating and controlling mass flowmenter2It divides as 0.005 Pa, 0.5 A of target current, corresponding target voltage is 350 V, setting
Pulsed bias is -60 V, and 35 % of duty ratio, 400 DEG C of depositing temperature, total sedimentation time is 90 min.After deposition, stop logical
Enter N2With Ar gases, substrate bias, shielding power supply switch and heating system are closed, continues to vacuumize, until gained film sample
50 DEG C are cooled to the furnace hereinafter, taking out sample.
The WB of deposition is detected using step instrument2(N) thickness of film is 2 μm.WB is detected using XPS2(N) in film
The atom content of W, B, N be respectively：61.4 at.%, 34.1 at.%, 4.5 at.%.Fig. 1 is WB prepared by the present invention2(N)
The XPS collection of illustrative plates of (a) W 4f, (b) B 1s and (c) N 1s of film.WB2(N) the XPS collection of illustrative plates of the W 4f of film illustrates film
In have AlB2Type WB2Mutually generate；WB2(N) the XPS collection of illustrative plates of the B 1s of film illustrates there is AlB in film2Type WB2It is generated with BN phases；
WB2(N) the XPS collection of illustrative plates of the N 1s of film, which is further illustrated in film, has BN phases to generate.It is deposited in comprehensive XPS results and Fig. 2
The WB of state2(N) XRD spectrum of film can be inferred that BN as amorphous phase, and film has h-WB2/ a-BN composite constructions.
Fig. 2 is that (a) is the WB deposited using the prior art in Si on pieces2Film and（b）WB prepared by the present invention2(N)
The film X-ray diffraction spectrum after vacuum annealing at different temperatures.Comparison diagram 2（a）With（b）XRD spectrum, can significantly send out
The addition of existing N atoms considerably improves WB2The thermal stability of film makes its phase transition temperature from 700oC is improved to 1000oC。
To find out its cause, this is mainly by WB2(N) the unique h-WB of film2Caused by/a-BN microstructures, nanocrystalline WB2By a-BN institutes
Cladding, and BN has high thermal stability due to itself strong covalent bond, in high-temperature annealing process, it can prevent WB2
Atoms permeating between phase, so as to make WB2It is mutually difficult to happen phase transformation at high temperature.
Fig. 3 is the WB deposited in Si on pieces2Film is in 800 DEG C of (a), 900 DEG C of (b), 1000 DEG C of (c) and WB2(N) film exists
(d) 800 DEG C, 900 DEG C of (e), the surface topography map after 1000 DEG C of (f) annealing.By Fig. 3-(a), (b), (c), it is apparent that
With the raising of annealing temperature, WB2The lath-shaped crackle that film surface generates is more and more.The generation of crackle will significantly affect WB2
The use of film.By Fig. 3-(d), (e), (f), it is apparent that WB2(N) film anneals rear surface not at different temperatures
Have and generate clearly visible crackle, even annealing at 1000 DEG C, surface is still bright and clean.
Due to WB2A large amount of crackles are generated after Thin-film anneal and are gradually peeled off, therefore WB after can not being annealed2Film it is hard
Degree.Fig. 4 is WB prepared by the present invention2(N) nano-indentation hardness after film is annealed at different temperatures.By Tu Ke get, with
The increase of annealing temperature, the hardness of film show the trend for first increasing and reducing afterwards, and 42 GPa of peak is reached at 900 DEG C,
This, which is primarily due to annealing temperature increase, causes the crystallinity of film to increase, and film, which becomes finer and close, has caused film hardness
Increase；After annealing temperature reaches 1000 DEG C, the hardness of film decreases, and this is mainly due to WB2(N) film is 1000
There are WB generations when DEG C undergoing phase transition, and the hardness of WB is less than WB2。
Table 1 lists deposited WB2Film and WB2(N) nano-indentation hardness of film, friction coefficient and wear rate.From table
As can be seen that WB prepared by the present invention in 12(N) film hardness is apparently higher than WB2Film, friction coefficient is relatively low, and wear rate is only
For WB2The half of film.
More than the results show, the present invention are successfully prepared AlB by magnetron sputtering technique under non-equilibrium condition2Type
WB2(N) film, WB prepared by the method for the present invention2(N) ganoine thin film, hardness is high, and low wear rate, phase transition temperature is up to 1000
DEG C, there is higher high temperature hardness, annealing rear surface is smooth, has good high high-temp stability, this is for AlB2Type WB2(N) hard
The theoretical research of film and practical application are of great significance.
Claims (7)
1. a kind of AlB with high high-temp stability2Type WB2(N) ganoine thin film, which is characterized in that the WB2(N) ganoine thin film
Select WB2Type WB2Compound target is deposited on cemented carbide base material or Si plate substrates, WB2(N) ganoine thin film is with AlB2
The N doping WB of structure2Film, film densification is smooth, and thickness is 1.5 ~ 2.5 μm, and phase transition temperature is up to 1000 DEG C, and room temperature is hard
Spend 38 ~ 41 GPa, 36 ~ 42 GPa of high temperature hardness.
2. a kind of AlB with high high-temp stability according to claim 12Type WB2(N) ganoine thin film, feature exist
In the WB2(N) N content in film is 4.5 at.%, and film has crystalline A lB2Type WB2The h- of phase and amorphous BN phases
WB2/ a-BN nano composite structures.
3. a kind of AlB with high high-temp stability2Type WB2(N) preparation method of ganoine thin film, which is characterized in that using direct current
Magnetron sputtering technique prepares the WB2(N) film includes the following steps：
1）Base material pre-processes：Base material is subjected to mechanical lapping and polishing, is then respectively cleaned by ultrasonic 15 with acetone and alcohol in succession
Min is put into after drying on the sample stage of DC magnetron sputtering device, and setting target-substrate distance is 50 ~ 80 mm；Treat vacuum house vacuum
Degree reaches 9 × 10-3~5×10-3Start heating system, heating furnace chamber to 200 ~ 500 oC, when base vacuum is evacuated to 1 × 10 during Pa-3~3×10-3During Pa, the Ar that purity is more than 99.99% is passed through, it is inclined to be then turned on matrix in 0.8~2 Pa for Ar pressure controls
The V of -100V~-300 is depressed into, 5~15 min of sputter clean is carried out to base material；
2）Target pre-processes：Target power supply is opened, applies the electric current of 1 ~ 1.5 A, 10 ~ 15 min of pre-sputter cleaning is carried out to target,
Remove the impurity such as the oxide of target material surface；
3）Deposit WB2(N) ganoine thin film：WB2(N) film is deposited on using magnetron sputtering technique on hard alloy or Si sheet matrixes,
Deposition process technological parameter is：Total working pressure is 0.5 Pa, wherein by the way that mass flowmenter is controlled to make N2Divide is 0.005
Pa, setting target current are 0.5 A, corresponding 350 V of target voltage, and matrix pulsed bias is -50 ~ -100 V, 20 ~ 40 % of duty ratio,
400 ~ 500 DEG C of depositing temperature；
4）After deposition, stopping is passed through N2With Ar gases, substrate bias, shielding power supply switch and heating system are closed, continues to take out
Vacuum, until gained film sample cools to 50 DEG C with the furnace hereinafter, taking-up sample, is made AlB2Type WB2(N) ganoine thin film.
4. WB according to claim 32(N) preparation method of ganoine thin film, it is characterised in that：Step（2）Middle use
WB2The chemical composition of target is：The ratio of the atomic percentage content of B and W is 2.
5. a kind of AlB with high high-temp stability according to claim 32Type WB2(N) preparation method of ganoine thin film,
It is characterized in that, the WB2(N) film selects then WB2Type WB2Compound is target, using reaction magnetocontrol sputtering technology in Ar/
N2Under mixed atmosphere, by strictly controlling N2Reach thin with technological parameters such as Ar flows, depositing temperature, target power output and substrate bias
Effective control of film component, structure and performance.
6. a kind of AlB with high high-temp stability according to claim 32Type WB2(N) preparation method of ganoine thin film,
It is characterized in that, the step 1）, step 2）In target and matrix between a metal baffle is set, impurity is avoided to be deposited on
Matrix surface treats step 2）At the end of, baffle is removed by baffle regulator control system.
7. a kind of AlB with high high-temp stability according to claim 32Type WB2(N) preparation method of ganoine thin film,
It is characterized in that, the step 3）In, sedimentation time is set according to required film thickness.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201711435161.3A CN108130518A (en) | 2017-12-26 | 2017-12-26 | A kind of AlB with high high-temp stability2Type WB2(N) ganoine thin film and preparation method thereof |
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| CN201711435161.3A CN108130518A (en) | 2017-12-26 | 2017-12-26 | A kind of AlB with high high-temp stability2Type WB2(N) ganoine thin film and preparation method thereof |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111962022A (en) * | 2020-09-07 | 2020-11-20 | 西安石油大学 | WB (wideband) module2/WBC multilayer hard coating and preparation method and application thereof |
| CN115161606A (en) * | 2022-06-20 | 2022-10-11 | 中国科学院金属研究所 | Al modified WB 2 Coating and method for producing the same |
| CN115181948A (en) * | 2022-07-06 | 2022-10-14 | 中国科学院金属研究所 | W-Si-B hard coating and preparation method and application thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104513954A (en) * | 2013-09-26 | 2015-04-15 | 中国科学院金属研究所 | AlB2 type WB2 hard coating and preparation technology thereof |
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2017
- 2017-12-26 CN CN201711435161.3A patent/CN108130518A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104513954A (en) * | 2013-09-26 | 2015-04-15 | 中国科学院金属研究所 | AlB2 type WB2 hard coating and preparation technology thereof |
Non-Patent Citations (1)
| Title |
|---|
| Y.M.LIU等: "Effect of Nitrogen Content on Microstructures and Mechanical Properties of WB2(N) Films Deposited by Reactive Magnetron Sputtering", 《JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY》 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111962022A (en) * | 2020-09-07 | 2020-11-20 | 西安石油大学 | WB (wideband) module2/WBC multilayer hard coating and preparation method and application thereof |
| CN115161606A (en) * | 2022-06-20 | 2022-10-11 | 中国科学院金属研究所 | Al modified WB 2 Coating and method for producing the same |
| CN115181948A (en) * | 2022-07-06 | 2022-10-14 | 中国科学院金属研究所 | W-Si-B hard coating and preparation method and application thereof |
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Application publication date: 20180608 |