CN115172505A - HJT solar cell and manufacturing equipment and manufacturing method thereof - Google Patents
HJT solar cell and manufacturing equipment and manufacturing method thereof Download PDFInfo
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- CN115172505A CN115172505A CN202211005209.8A CN202211005209A CN115172505A CN 115172505 A CN115172505 A CN 115172505A CN 202211005209 A CN202211005209 A CN 202211005209A CN 115172505 A CN115172505 A CN 115172505A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 58
- 239000010408 film Substances 0.000 claims abstract description 188
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 147
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 107
- 239000010409 thin film Substances 0.000 claims abstract description 101
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 95
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 95
- 239000010703 silicon Substances 0.000 claims abstract description 95
- 229910021424 microcrystalline silicon Inorganic materials 0.000 claims abstract description 65
- 238000000034 method Methods 0.000 claims description 94
- 230000008569 process Effects 0.000 claims description 76
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 33
- 239000001257 hydrogen Substances 0.000 claims description 32
- 229910052739 hydrogen Inorganic materials 0.000 claims description 32
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 12
- 230000003139 buffering effect Effects 0.000 claims description 12
- 239000001301 oxygen Substances 0.000 claims description 12
- 229910052760 oxygen Inorganic materials 0.000 claims description 12
- 239000002994 raw material Substances 0.000 claims description 12
- 238000004050 hot filament vapor deposition Methods 0.000 claims description 11
- 238000000151 deposition Methods 0.000 claims description 7
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 6
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 5
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 5
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 4
- 229910000077 silane Inorganic materials 0.000 claims description 4
- 239000011261 inert gas Substances 0.000 claims description 3
- 238000005086 pumping Methods 0.000 claims description 3
- 238000010926 purge Methods 0.000 claims description 3
- 239000005922 Phosphane Substances 0.000 claims description 2
- 239000002019 doping agent Substances 0.000 claims description 2
- 229910000064 phosphane Inorganic materials 0.000 claims description 2
- 238000004140 cleaning Methods 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 12
- 238000006243 chemical reaction Methods 0.000 abstract description 11
- 238000002161 passivation Methods 0.000 abstract description 9
- 230000003287 optical effect Effects 0.000 abstract description 6
- 238000002834 transmittance Methods 0.000 abstract description 5
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 49
- 230000000052 comparative effect Effects 0.000 description 17
- 238000011049 filling Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 239000002082 metal nanoparticle Substances 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 239000002210 silicon-based material Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/54—Apparatus specially adapted for continuous coating
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Abstract
The invention provides an HJT solar cell, manufacturing equipment and a manufacturing method thereof, wherein the HJT solar cell comprises a first collector electrode, a first TCO thin film, a P-type doped microcrystalline silicon thin film, a P-type doped hydrogenated amorphous silicon oxide thin film, a first intrinsic hydrogenated amorphous silicon oxide thin film, an N-type silicon wafer, a second intrinsic hydrogenated amorphous silicon oxide thin film, an N-type doped microcrystalline silicon thin film, a second TCO thin film and a second collector electrode which are sequentially stacked from top to bottom. According to the invention, the intrinsic layer and the doped layer are replaced by the hydrogenated silicon oxide film, so that the passivation effect, the light transmittance and the matching degree with the TCO film can be improved, the optical loss is reduced to the maximum extent, meanwhile, the doped microcrystalline silicon film is arranged between the doped hydrogenated amorphous silicon oxide film and the TCO film, the contact resistance with the TCO film can be reduced, and the conversion efficiency of the cell is obviously improved under the HJT structure provided by the invention.
Description
Technical Field
The invention belongs to the field of solar cells, and particularly relates to an HJT solar cell, and manufacturing equipment and a manufacturing method thereof.
Background
An Intrinsic Thin film Heterojunction (HJT) solar cell is a relatively efficient crystalline silicon solar cell structure at present, combines the characteristics of a crystalline silicon cell and a silicon-based Thin film cell, and has the advantages of short manufacturing process, low process temperature, high conversion efficiency, large power generation capacity and the like.
Generally, an HJT battery is of a symmetrical double-sided structure, an N-type crystal silicon wafer is arranged in the middle, an intrinsic amorphous silicon film and a P-type amorphous silicon film are sequentially deposited on the front side to form a P-N junction, an intrinsic amorphous silicon film and an N-type amorphous silicon film are sequentially deposited on the back side of the silicon wafer to form a back surface field, meanwhile, due to poor conductivity of amorphous silicon, transparent conducting films (TCO) are respectively deposited on the outer surfaces of the two sides to enhance conductivity, and finally double-sided electrodes are printed to form a complete battery structure; the HJT technology well solves the problem of high carrier recombination loss in the doped layer and substrate contact region of conventional batteries because an intrinsic amorphous silicon layer is inserted between the doped amorphous silicon layer and the heterojunction of N-type monocrystalline silicon in the HJT structure battery, so that a good passivation effect of the heterojunction interface is achieved, and the battery can obtain a high open-circuit voltage and excellent conversion capability.
On the basis of the conventional HJT structure, in order to further improve the performance of the HJT battery, researchers propose optimized solutions from different aspects:
CN110416342A discloses a metal nanoparticle-based HJT cell and a manufacturing method thereof, the cell comprises an N-type silicon wafer, and an intrinsic amorphous silicon layer, a P-type doped amorphous silicon layer, an N-type doped amorphous silicon layer, a first metal nanoparticle layer, an illuminated surface TCO layer, a backlight surface TCO layer and a metal grid line electrode are sequentially arranged on an illuminated surface and a backlight surface of the N-type silicon wafer. According to the invention, by adding the metal nanoparticle layer, the near-field enhancement effect and the scattering effect of particles caused by LSP resonance generated by the action of the metal nanoparticles and light are utilized, so that the length of an optical path in the HJT battery is increased and the light absorption is obviously enhanced, particularly in a 700nm-1100nm waveband, the photocurrent is obviously improved, the short-circuit current and the external quantum efficiency are further improved, and the photoelectric conversion efficiency is improved.
CN114695576A discloses a multi-intrinsic-layer amorphous silicon passivation layer structure for an HJT cell, which optimizes the structure of an amorphous silicon intrinsic layer for the HJT cell, adopts a multi-layer intrinsic layer structure, enhances the passivation effect of the intrinsic layer, and can effectively prevent epitaxial silicon from being formed in the process of depositing a hydrogenated amorphous silicon intrinsic layer. Each intrinsic layer serves to improve different electrical performance parameters, which can further optimize the electrical performance of the HJT cell.
CN112713212A discloses a HJT cell based on a double-layer transparent conductive oxide film and a manufacturing method thereof, wherein the manufacturing method comprises the steps of sequentially manufacturing an intrinsic amorphous silicon layer, an N-type doped amorphous silicon layer, a P-type doped amorphous silicon layer, a first transparent conductive oxide layer, a second transparent conductive oxide layer and a metal grid line electrode on a light receiving surface and a backlight surface of an N-type silicon wafer respectively. Through optimizing the transmissivity and the electric conductivity of two-layer transparent conductive oxide film respectively, make transparent conductive oxide film compromise the balance of transmissivity and electric conductivity on the whole, promoted transparent conductive oxide film's photoelectric properties on the whole, promoted the fill factor by a wide margin under the short-circuit current condition of guaranteeing the battery, and then improved the conversion efficiency of HJT battery greatly.
In the scheme, the additional functional layer is added for optimization, but the amorphous silicon layer is still used for forming a basic cell structure, although the intrinsic amorphous silicon thin film layer can passivate an interface well, research finds that the intrinsic amorphous silicon thin film layer has the defects of light absorption, severe manufacturing process conditions and the like, similarly, for the doped amorphous silicon thin film, the improvement of the cell performance is limited by the problems of mismatched refractive index with a TCO layer, large parasitic absorption to light and the like, and therefore a more appropriate material needs to be searched for forming a new heterojunction cell structure, and the development of the HJT cell is further promoted.
Disclosure of Invention
In view of the problems in the prior art, an object of the present invention is to provide an HJT solar cell, and an apparatus and a method for manufacturing the same, wherein the HJT solar cell includes a first collector, a first TCO film, a P-type doped microcrystalline silicon film, a P-type doped hydrogenated amorphous silicon oxide film, a first intrinsic hydrogenated amorphous silicon oxide film, an N-type silicon wafer, a second intrinsic hydrogenated amorphous silicon oxide film, an N-type doped microcrystalline silicon film, a second TCO film, and a second collector, which are sequentially stacked from top to bottom. According to the invention, the intrinsic layer and the doped layer are replaced by the hydrogenated silicon oxide film, so that the passivation effect, the light transmittance and the matching degree with the TCO film refractive index can be effectively improved, the optical loss is reduced to the maximum extent, and the open-circuit voltage and the short-circuit current are favorably improved.
In order to achieve the purpose, the invention adopts the following technical scheme:
in a first aspect, the invention provides a HJT solar cell, which comprises an N-type silicon wafer, wherein a first intrinsic hydrogenated amorphous silicon oxide film, a P-type doped microcrystalline silicon film, a first TCO film and a first collector electrode are sequentially stacked from inside to outside on one side of the front surface of the N-type silicon wafer; the second intrinsic hydrogenated amorphous silicon oxide film, the N-type doped microcrystalline silicon film, the second TCO film and the second collector electrode are sequentially arranged on one side of the back surface of the N-type silicon wafer in a stacked mode from inside to outside.
Compared with the prior art, the intrinsic layer and the doped layer are replaced by the hydrogenated silicon oxide film, so that the light transmittance of each film layer can be effectively improved, the passivation effect of the first intrinsic hydrogenated amorphous silicon oxide film and the second intrinsic hydrogenated amorphous silicon oxide film is improved, and the open-circuit voltage of the battery is favorably improved; the matching degree of the refractive indexes of the P-type doped hydrogenated amorphous silicon oxide film and the N-type doped hydrogenated amorphous silicon oxide film with the corresponding TCO films is optimized, the optical loss is reduced to the maximum extent, and the short-circuit current of the cell is facilitated; meanwhile, the doped microcrystalline silicon film is arranged between the doped hydrogenated amorphous silicon oxide film and the TCO film as an additional doping layer, so that the contact resistance with the TCO film can be reduced, and the filling factor of the cell can be effectively improved; therefore, under the HJT structure provided by the invention, the conversion efficiency of the obtained solar cell is obviously improved.
It should be noted that when the P-type and/or N-type doped microcrystalline silicon is replaced by a film made of a doped amorphous silicon material, the conductivity is affected; if the film is replaced by a microcrystalline silicon oxide film, the contact resistance between the film and TCO is increased, and the conversion efficiency of the cell is affected by the two alternative methods. Therefore, the doped microcrystalline silicon of the present invention can achieve the best overall effect in the HJT structure.
The front surface of the N-type silicon wafer refers to an illuminated surface, and the back surface of the N-type silicon wafer refers to a backlight surface.
The following technical solutions are preferred technical solutions of the present invention, but not limited to the technical solutions provided by the present invention, and technical objects and advantageous effects of the present invention can be better achieved and achieved by the following technical solutions.
In a preferred embodiment of the present invention, the first intrinsic hydrogenated amorphous silicon oxide thin film and the second intrinsic hydrogenated amorphous silicon oxide thin film each have a thickness of 10 to 15nm, for example, 10nm, 10.5nm, 11nm, 11.5nm, 12nm, 12.5nm, 13nm, 13.5nm, 14nm, 14.5nm, or 15nm, but the thickness is not limited to the above-mentioned values, and other values not listed in the above-mentioned range of values are also applicable.
Preferably, the thickness of each of the P-type doped hydrogenated amorphous silicon oxide thin film and the N-type doped hydrogenated amorphous silicon oxide thin film is 5 to 10nm, for example, 5nm, 5.5nm, 6nm, 6.5nm, 7nm, 7.5nm, 8nm, 8.5nm, 9nm, 9.5nm, or 10nm, but is not limited to the above-mentioned values, and other values not listed in the above-mentioned value range are also applicable.
Preferably, the thickness of each of the P-type doped microcrystalline silicon thin film and the N-type doped microcrystalline silicon thin film is 10 to 15nm, for example, 10nm, 10.5nm, 11nm, 11.5nm, 12nm, 12.5nm, 13nm, 13.5nm, 14nm, 14.5nm, or 15nm, but is not limited to the above-mentioned values, and other values not listed in the above-mentioned value range are also applicable.
The thickness of each film in the present invention should be in a suitable range, and too thick or too thin may have an influence on the conversion efficiency, such as: if the thickness of the doped layer is too thick, the loss of sunlight passing through the film layer can be increased, and the short-circuit current is influenced; if the thickness of the doped layer is too thin, the conductivity is affected; the thickness of the intrinsic layer is too thin, and dangling bonds on the surface of the silicon wafer cannot be completely passivated, so that the passivation effect is influenced; the thickness of the intrinsic layer is too thick, so that the intensity of a built-in electric field is reduced; based on the above, those skilled in the art can reasonably adjust and select the thickness and the matching relationship of each thin film according to actual needs.
In a second aspect, the present invention provides a manufacturing apparatus for an HJT solar cell according to the first aspect, the manufacturing apparatus including a Cat-CVD apparatus, the Cat-CVD apparatus including a first process chamber and a first buffer chamber, a second process chamber and a second buffer chamber, a third process chamber and a third buffer chamber, a fourth process chamber and a fourth buffer chamber, and a fifth process chamber and a fifth buffer chamber, so as to sequentially manufacture different types of thin films.
As a preferable technical scheme of the invention, a preheating cavity is arranged in front of the first process cavity.
Preferably, a hot wire is arranged in the first process cavity and used for decomposing the raw materials; the second process cavity, the third process cavity, the fourth process cavity and the fifth process cavity are all arranged the same as the first process cavity.
In the invention, a buffer cavity is arranged behind each process cavity, so that the process environment and atmosphere between two adjacent process cavities are not influenced by each other.
In a third aspect, the present invention provides a method for manufacturing an HJT solar cell, using the manufacturing apparatus according to the second aspect, the method comprising the steps of:
(1) Preheating the double-sided textured N-type silicon wafer;
(2) The silicon wafer is transferred into a first process cavity, the first intrinsic hydrogenated amorphous silicon oxide film and the second intrinsic hydrogenated amorphous silicon oxide film are respectively manufactured on the surfaces of the two sides of the N-type silicon wafer, and then the silicon wafer is transferred into a first buffer cavity for buffering;
(3) Transferring the P-type doped hydrogenated amorphous silicon oxide film into a second process cavity, manufacturing the P-type doped hydrogenated amorphous silicon oxide film on the first intrinsic hydrogenated amorphous silicon oxide film, and transferring the P-type doped hydrogenated amorphous silicon oxide film into a second buffer cavity for buffering; then transferring the silicon wafer into a third process cavity, manufacturing the P-type doped microcrystalline silicon film on the P-type doped hydrogenated amorphous silicon oxide film, and transferring the silicon wafer into a third buffer cavity for buffering;
(4) Transferring the N-type doped hydrogenated amorphous silicon oxide film into a fourth process cavity, manufacturing the N-type doped hydrogenated amorphous silicon oxide film on the second intrinsic hydrogenated amorphous silicon oxide film, and transferring the N-type doped hydrogenated amorphous silicon oxide film into a fourth buffer cavity for buffering; then transferring the silicon wafer into a fifth process cavity, manufacturing the N-type doped microcrystalline silicon film on the N-type doped hydrogenated amorphous silicon oxide film, and transferring the silicon wafer into a fifth buffer cavity for buffering;
(5) Manufacturing a first TCO film and a second TCO film on the P-type doped microcrystalline silicon film and the N-type doped microcrystalline silicon film respectively;
(6) Manufacturing a first collector electrode and a second collector electrode on the first TCO film and the second TCO film respectively to obtain the HJT solar cell;
wherein, the step (3) and the step (4) are not in sequence.
According to the invention, the P-type doped hydrogenated amorphous silicon oxide film and the N-type doped hydrogenated amorphous silicon oxide film are manufactured in no sequence, and the P-type doped microcrystalline silicon film and the N-type doped microcrystalline silicon film are manufactured in no sequence on the basis that the P-type doped hydrogenated amorphous silicon oxide film and the N-type doped hydrogenated amorphous silicon oxide film are prepared.
In the Cat-CVD equipment, in order to prevent the process chambers for preparing films with different doping types from being influenced by gas cross, the manufacturing of each film with the same doping type is preferably finished in sequence, and then the sequential manufacturing of each film with the next doping type is carried out; specifically, the invention preferably manufactures a P-type doped hydrogenated amorphous silicon oxide film, then manufactures a P-type doped microcrystalline silicon film thereon, and then sequentially manufactures an N-type doped hydrogenated amorphous silicon oxide film and an N-type doped microcrystalline silicon film; or manufacturing an N-type doped hydrogenated amorphous silicon oxide film, manufacturing an N-type doped microcrystalline silicon film on the N-type doped hydrogenated amorphous silicon oxide film, and then sequentially manufacturing a P-type doped hydrogenated amorphous silicon oxide film and a P-type doped microcrystalline silicon film; of course, the skilled person can select and adjust the method according to the actual situation, for example, the manufacturing sequence may also be: firstly, manufacturing a P-type doped hydrogenated amorphous silicon oxide film and an N-type doped hydrogenated amorphous silicon oxide film, wherein the P-type doped hydrogenated amorphous silicon oxide film and the N-type doped hydrogenated amorphous silicon oxide film are not in sequence, and then manufacturing the P-type doped microcrystalline silicon film and the N-type doped microcrystalline silicon film on the basis of the P-type doped hydrogenated amorphous silicon oxide film and the N-type doped microcrystalline silicon oxide film.
The manufacturing method adopted by the invention is preferably a Cat-CVD method, namely the manufacturing of all intrinsic films and doped films is carried out in an integrated Cat-CVD device with a plurality of process cavities connected in sequence, compared with the PECVD method and the device used in the prior art, the method has the advantages that the hydrogen content can be easily adjusted when the intrinsic films and the doped films are manufactured in the Cat-CVD device, so that the material of the film can be more easily controlled, the hydrogen content in the film can reach a higher level, the plasma treatment is not required to be carried out for a plurality of times for improving the hydrogen content, the film damage caused when the plasma bombards the substrate and the film is avoided, and the film forming quality is optimized; on the other hand, when the whole HJT structure is manufactured by adopting integrated Cat-CVD equipment, the technological process is relatively simplified, the film forming rate is obviously improved, and the total process time can be saved by 5-8 times compared with a PECVD method.
As a preferable technical scheme of the invention, the step (1) further comprises preheating the N-type silicon wafer.
Preferably, the preheating is performed in a preheating chamber.
Preferably, the temperature of the preheating in step (1) is 100 to 200 ℃, such as 100 ℃, 120 ℃, 130 ℃, 140 ℃, 150 ℃, 160 ℃, 170 ℃, 180 ℃, 190 ℃ or 200 ℃, but not limited to the recited values, and other values not recited in the above-mentioned range of values are also applicable.
Preferably, said preheating of step (1) is carried out at a vacuum degree < 0.001 Pa.
Preferably, the temperature of the hot wire in the first process chamber in step (2) is 1500-1900 ℃, such as 1500 ℃, 1550 ℃, 1600 ℃, 1650 ℃, 1700 ℃, 1750 ℃, 1800 ℃, 1850 ℃ or 1900 ℃, but not limited to the values listed, and other values not listed in the above range of values are equally applicable.
In a preferred embodiment of the present invention, the temperature of the hot wire in the process chamber corresponding to each of the steps (3) and (4) is 1600 to 2200 ℃, for example 1600 ℃, 1700 ℃, 1800 ℃, 1900 ℃, 2000 ℃, 2200 ℃, or 2200 ℃, but is not limited to the above-mentioned values, and other values not listed in the above-mentioned range of values are also applicable.
The process chambers corresponding to the step (3) and the step (4) are a second process chamber, a third process chamber, a fourth process chamber and a fifth process chamber.
Preferably, the distances from the hot filament to the pre-deposition surface in the process chambers corresponding to steps (2) - (4) are 40-150 mm, such as 40mm, 50mm, 60mm, 70mm, 80mm, 90mm, 100mm, 110mm, 120mm, 130mm, 140mm, or 150mm, but not limited to the values listed, and other values not listed in the above range of values are also applicable.
Preferably, the pressure in the process chamber corresponding to each of the steps (2) - (4) is 1-50 Pa, such as 1Pa, 5Pa, 10Pa, 15Pa, 20Pa, 25Pa, 30Pa, 35Pa, 40Pa, 45Pa or 50Pa, but not limited to the recited values, and other values not recited in the above range are also applicable.
Preferably, the chamber temperature of the process chamber corresponding to each of the steps (2) - (4) is 100-300 ℃, such as 100 ℃, 120 ℃, 140 ℃, 160 ℃, 180 ℃, 200 ℃, 220 ℃, 240 ℃, 260 ℃, 280 ℃ or 300 ℃, but not limited to the recited values, and other unrecited values in the above-mentioned range of values are also applicable.
Among the technological parameters, the temperature of the hot wire mainly influences the decomposition efficiency of the reaction gas, and influences the film forming rate and the film quality; the substrate temperature is deposition temperature, and mainly influences deposition rate, carrier concentration in the film, crystallization rate of the film and crystal orientation; the pressure intensity in the process chamber, namely the deposition pressure, mainly influences the deposition rate, the carrier concentration of the film and the crystallization rate of the film; the gas flow ratio primarily affects the composition of the film; the hot wire distance influences the surface temperature of the silicon wafer and the efficiency of gas transmission to the surface of the silicon wafer; according to the above, those skilled in the art can reasonably adjust and select various parameters and their coordination relationship according to actual needs.
Preferably, the buffering of steps (2) - (4) comprises simultaneously performing the vacuum pumping and the inert gas purging.
The invention carries out vacuum pumping and inert gas purging in each buffer cavity, aiming at emptying the process gas in the previous process cavity and preventing the process gas from being brought into the next process cavity to influence the next process. And can prevent the two process chambers from communicating with each other.
As a preferable embodiment of the present invention, the raw materials for manufacturing the first intrinsic hydrogenated amorphous silicon oxide thin film and the second intrinsic hydrogenated amorphous silicon oxide thin film in the step (2) include a first silicon source, an oxygen source, and a hydrogen source.
Preferably, the flow ratio of the first silicon source, the oxygen source and the hydrogen source is 1 (0.1 to 10) (5 to 20), such as 1.
Preferably, the raw materials for manufacturing the P-type doped hydrogenated amorphous silicon oxide film in the step (3) comprise a first silicon source, an oxygen source, a hydrogen source and a first doping source.
The primary source, source and source are preferably in the range of 1.1 to 0.5.
Preferably, the raw materials for manufacturing the P-type doped microcrystalline silicon thin film in the step (3) comprise a second silicon source, a hydrogen source and a first doping source.
Preferably, the flow ratio of the second silicon source, the hydrogen source and the first doping source is 1 (20 to 100) (0.3 to 0.7), such as 1.
Preferably, the first dopant source comprises diborane.
As a preferable embodiment of the present invention, the raw material for manufacturing the N-type doped hydrogenated amorphous silicon oxide thin film in the step (4) includes a first silicon source, an oxygen source, a hydrogen source, and a second doping source.
The primary source, source and secondary source have the following values.
Preferably, the raw materials for manufacturing the N-type doped microcrystalline silicon thin film in the step (4) include a second silicon source, a hydrogen source and a second doping source.
Preferably, the flow ratio of the second silicon source, the hydrogen source and the second doping source is 1 (20 to 100) (0.1 to 0.5), such as 1.
Preferably, the second doping source comprises a phosphane.
As a preferred technical solution of the present invention, the first silicon source includes tetraethoxysilane.
Preferably, the second silicon source comprises silane.
Preferably, the oxygen source comprises ozone.
Preferably, the hydrogen source comprises hydrogen gas.
It should be noted that, in the process of preparing the thin film by the Cat-CVD method of the present invention, the amount of hydrogen source, such as hydrogen, may affect the material of the thin film, i.e., affect the transition between microcrystalline silicon and amorphous silicon, where the thin film is amorphous when the hydrogen content is low, and the thin film is nano/microcrystalline when the hydrogen content is high.
Compared with the prior art, the invention at least has the following beneficial effects:
(1) Compared with the intrinsic amorphous silicon film in the prior art, the intrinsic hydrogenated amorphous silicon oxide film used in the invention has better passivation effect, and is beneficial to improving the open-circuit voltage of the battery;
(2) Compared with the doped amorphous silicon thin film in the prior art, the doped hydrogenated amorphous silicon oxide thin film used in the invention has wider band gap, and is beneficial to improving the short-circuit current of the battery; the doped hydrogenated amorphous silicon oxide film has better light transmittance than the doped amorphous silicon film, has lower refractive index than the doped amorphous silicon film, can be better matched with the TCO film in refractive index, and reduces optical loss;
(3) According to the invention, the doped hydrogenated amorphous silicon oxide film is not directly contacted with the TCO film, and the doped microcrystalline silicon film is arranged for spacing, so that the contact resistance with the TCO film layer can be reduced, and the filling factor of the cell can be improved;
(4) With the matching of the HJT structure provided by the invention, the conversion efficiency of the obtained solar cell is obviously improved.
Drawings
Fig. 1 is a schematic structural diagram of an HJT solar cell according to example 1 of the present invention;
in the figure: the solar cell comprises a 1-N type silicon wafer, a 2-first intrinsic hydrogenated amorphous silicon oxide film, a 3-second intrinsic hydrogenated amorphous silicon oxide film, a 4-P type doped hydrogenated amorphous silicon oxide film, a 5-N type doped hydrogenated amorphous silicon oxide film, a 6-P type doped microcrystalline silicon film, a 7-N type doped microcrystalline silicon film, an 8-first TCO film, a 9-second TCO film, a 10-first collector electrode and a 11-second collector electrode.
Detailed Description
The technical scheme of the invention is further explained by the specific implementation mode in combination with the attached drawings. It should be understood by those skilled in the art that the examples are only for the understanding of the present invention and should not be construed as the specific limitations of the present invention.
Example 1
The embodiment provides an HJT solar cell, a schematic structural diagram of which is shown in fig. 1, the solar cell includes an N-type silicon wafer 1, and a first intrinsic hydrogenated amorphous silicon oxide thin film 2 with a thickness of 12.5nm, a P-type doped hydrogenated amorphous silicon oxide thin film 4 with a thickness of 7.5nm, a P-type doped microcrystalline silicon thin film 6 with a thickness of 12.5nm, a first TCO thin film 8 and a first collector 10 are sequentially stacked from inside to outside on one side of the front surface of the N-type silicon wafer 1; a second intrinsic hydrogenated amorphous silicon oxide film 3 with the thickness of 12.5nm, an N-type doped hydrogenated amorphous silicon oxide film 5 with the thickness of 7.5nm, an N-type doped microcrystalline silicon film 7 with the thickness of 12.5nm, a second TCO film 9 and a second collector electrode 10 are sequentially stacked from inside to outside on one side of the back surface of the N-type silicon wafer 1.
The HJT solar cell described in this example was fabricated using the following method:
(1) Placing the double-sided textured N-type silicon wafer on a carrier plate in a preheating cavity of Cat-CVD equipment, vacuumizing to less than 0.001Pa, and preheating at 150 ℃;
(2) Transferring a carrier plate filled with a preheated N-type silicon wafer into a first process chamber, setting the temperature of a hot wire to be 1700 ℃, controlling the distance from the hot wire to the carrier plate to be 55mm, setting the pressure in the first process chamber to be 2Pa, and setting the temperature of the chamber to be 180 ℃; introducing tetraethoxysilane, ozone and hydrogen with the flow ratio of 1;
(3) Transferring a support plate into a second process chamber from a first buffer chamber, setting the temperature of a hot wire to be 1900 ℃, controlling the distance from the hot wire to the support plate to be 50mm, and setting the pressure in the second process chamber to be 5Pa and the temperature of the chamber to be 200 ℃; introducing tetraethoxysilane, ozone, hydrogen and diborane in a flow ratio of 1; then, conveying the carrier plate into a third process cavity from the second buffer cavity, setting the temperature of a hot wire to be 1850 ℃, controlling the distance from the hot wire to the carrier plate to be 45mm, and setting the pressure in the third process cavity to be 2Pa and the temperature of the cavity to be 240 ℃; introducing silane, hydrogen and diborane according to a flow ratio of 1;
(4) Transferring the carrier plate into a fourth process chamber from a third buffer chamber, setting the temperature of a hot wire to be 1900 ℃, controlling the distance from the hot wire to the carrier plate to be 48mm, and setting the pressure in the fourth process chamber to be 4Pa and the temperature of the chamber to be 210 ℃; introducing tetraethoxysilane, ozone, hydrogen and phosphine with the flow ratio of 1; then, conveying the carrier plate into a fifth process chamber from a fourth buffer chamber, setting the temperature of a hot wire to be 2000 ℃, controlling the distance from the hot wire to the carrier plate to be 40mm, and setting the pressure in the fifth process chamber to be 2Pa and the temperature of the chamber to be 270 ℃; introducing silane, hydrogen and phosphine with a flow ratio of 1;
(5) Transferring the carrier plate into a PVD (physical vapor deposition) chamber from a fifth buffer chamber, and manufacturing a first TCO (transparent conductive oxide) film and a second TCO film on the P-type doped microcrystalline silicon film and the N-type doped microcrystalline silicon film respectively;
(6) And respectively manufacturing a first collector electrode and a second collector electrode on the first TCO film and the second TCO film to obtain the HJT solar cell.
Example 2
The embodiment provides an HJT solar cell, which comprises an N-type silicon wafer, wherein a first intrinsic hydrogenated amorphous silicon oxide thin film with the thickness of 10nm, a P-type doped hydrogenated amorphous silicon oxide thin film with the thickness of 5nm, a P-type doped microcrystalline silicon thin film with the thickness of 10nm, a first TCO thin film and a first collector electrode are sequentially stacked from inside to outside on one side of the front surface of the N-type silicon wafer; a second intrinsic hydrogenated amorphous silicon oxide film with the thickness of 10nm, an N-type doped hydrogenated amorphous silicon oxide film with the thickness of 5nm, an N-type doped microcrystalline silicon film with the thickness of 10nm, a second TCO film and a second collector electrode are sequentially stacked from inside to outside on one side of the back surface of the N-type silicon wafer.
Example 3
The embodiment provides an HJT solar cell, which comprises an N-type silicon wafer, wherein a first intrinsic hydrogenated amorphous silicon oxide film with the thickness of 11.3nm, a P-type doped hydrogenated amorphous silicon oxide film with the thickness of 6.2nm, a P-type doped microcrystalline silicon film with the thickness of 11.2nm, a first TCO film and a first collector electrode are sequentially stacked from inside to outside on one side of the front surface of the N-type silicon wafer; a second intrinsic hydrogenated amorphous silicon oxide thin film with the thickness of 11.3nm, an N-type doped hydrogenated amorphous silicon oxide thin film with the thickness of 5.6nm, an N-type doped microcrystalline silicon thin film with the thickness of 13.4nm, a second TCO thin film and a second collector are sequentially stacked from inside to outside on one side of the back face of the N-type silicon wafer.
Example 4
The embodiment provides an HJT solar cell, which comprises an N-type silicon wafer, wherein a first intrinsic hydrogenated amorphous silicon oxide thin film with the thickness of 13.7nm, a P-type doped hydrogenated amorphous silicon oxide thin film with the thickness of 8.4nm, a P-type doped microcrystalline silicon thin film with the thickness of 14nm, a first TCO thin film and a first collector electrode are sequentially stacked from inside to outside on one side of the front surface of the N-type silicon wafer; the second intrinsic hydrogenated amorphous silicon oxide thin film with the thickness of 13.7nm, the N-type doped hydrogenated amorphous silicon oxide thin film with the thickness of 9.4nm, the N-type doped microcrystalline silicon thin film with the thickness of 12.8nm, the second TCO thin film and the second collector electrode are sequentially stacked from inside to outside on one side of the back face of the N-type silicon wafer.
Example 5
The embodiment provides an HJT solar cell, which comprises an N-type silicon wafer, wherein a first intrinsic hydrogenated amorphous silicon oxide thin film with the thickness of 15nm, a P-type doped hydrogenated amorphous silicon oxide thin film with the thickness of 10nm, a P-type doped microcrystalline silicon thin film with the thickness of 15nm, a first TCO thin film and a first collector electrode are sequentially stacked from inside to outside on one side of the front surface of the N-type silicon wafer; a second intrinsic hydrogenated amorphous silicon oxide film with the thickness of 15nm, an N-type doped hydrogenated amorphous silicon oxide film with the thickness of 10nm, an N-type doped microcrystalline silicon film with the thickness of 15nm, a second TCO film and a second collector electrode are sequentially stacked from inside to outside on one side of the back face of the N-type silicon chip.
Comparative example 1
The present comparative example provides a HJT solar cell that does not contain a P-type doped microcrystalline silicon thin film and an N-type doped microcrystalline silicon thin film;
specifically, the solar cell comprises an N-type silicon wafer, wherein a first intrinsic hydrogenated amorphous silicon oxide thin film with the thickness of 12.5nm, a P-type doped hydrogenated amorphous silicon oxide thin film with the thickness of 7.5nm, a first TCO thin film and a first collector electrode are sequentially stacked from inside to outside on one side of the front surface of the N-type silicon wafer; the second intrinsic hydrogenated amorphous silicon oxide film with the thickness of 12.5nm, the N-type doped hydrogenated amorphous silicon oxide film with the thickness of 7.5nm, the second TCO film and the second collector electrode are sequentially stacked from inside to outside on one side of the back face of the N-type silicon wafer.
Comparative example 2
The comparative example provides an HJT solar cell, the intrinsic layer of which is made of amorphous silicon;
specifically, the solar cell comprises an N-type silicon wafer, wherein a first intrinsic amorphous silicon thin film with the thickness of 12.5nm, a P-type doped hydrogenated amorphous silicon oxide thin film with the thickness of 7.5nm, a P-type doped microcrystalline silicon thin film with the thickness of 12.5nm, a first TCO thin film and a first collector electrode are sequentially stacked from inside to outside on one side of the front surface of the N-type silicon wafer; a second intrinsic amorphous silicon thin film with the thickness of 12.5nm, an N-type doped hydrogenated amorphous silicon oxide thin film with the thickness of 7.5nm, an N-type doped microcrystalline silicon thin film with the thickness of 12.5nm, a second TCO thin film and a second collector electrode are sequentially stacked from inside to outside on one side of the back face of the N-type silicon wafer.
Comparative example 3
The comparative example provides a HJT solar cell, wherein a doping layer of the solar cell is made of amorphous silicon;
specifically, the solar cell comprises an N-type silicon wafer, wherein a first intrinsic hydrogenated amorphous silicon oxide thin film with the thickness of 12.5nm, a P-type doped amorphous silicon thin film with the thickness of 7.5nm, a P-type doped microcrystalline silicon thin film with the thickness of 12.5nm, a first TCO thin film and a first collector electrode are sequentially stacked from inside to outside on one side of the front surface of the N-type silicon wafer; a second intrinsic hydrogenated amorphous silicon oxide thin film with the thickness of 12.5nm, an N-type doped amorphous silicon thin film with the thickness of 7.5nm, an N-type doped microcrystalline silicon thin film with the thickness of 12.5nm, a second TCO thin film and a second collector electrode are sequentially stacked from inside to outside on one side of the back face of the N-type silicon wafer.
Comparative example 4
The comparative example provides an HJT solar cell, in which both the intrinsic layer and the doped layer of the solar cell are made of amorphous silicon material;
specifically, the solar cell comprises an N-type silicon wafer, wherein a first intrinsic amorphous silicon thin film with the thickness of 12.5nm, a P-type doped amorphous silicon thin film with the thickness of 7.5nm, a P-type doped microcrystalline silicon thin film with the thickness of 12.5nm, a first TCO thin film and a first collector electrode are sequentially stacked from inside to outside on one side of the front surface of the N-type silicon wafer; the back side of the N-type silicon wafer is sequentially provided with a second intrinsic amorphous silicon film with the thickness of 12.5nm, an N-type doped amorphous silicon film with the thickness of 7.5nm, an N-type doped microcrystalline silicon film with the thickness of 12.5nm, a second TCO film and a second collector electrode in a stacking mode from inside to outside.
Comparative example 5
The comparative example provides an HJT solar cell, wherein an intrinsic layer and a doping layer of the solar cell are made of amorphous silicon materials and do not contain a P-type doped microcrystalline silicon thin film and an N-type doped microcrystalline silicon thin film;
specifically, the solar cell comprises an N-type silicon wafer, wherein a first intrinsic amorphous silicon thin film with the thickness of 12.5nm, a P-type doped amorphous silicon thin film with the thickness of 7.5nm, a first TCO thin film and a first collector electrode are sequentially stacked from inside to outside on one side of the front surface of the N-type silicon wafer; the second intrinsic amorphous silicon thin film with the thickness of 12.5nm, the N-type doped amorphous silicon thin film with the thickness of 7.5nm, the second TCO thin film and the second collector electrode are sequentially stacked from inside to outside on one side of the back face of the N-type silicon wafer.
The solar cells obtained in examples and comparative examples were individually tested, and the results are shown in Table 1.
TABLE 1
| Item | Short-circuit current (mA) | Open circuit voltage (mV) | Filling factor (%) | Conversion efficiency (%) |
| Example 1 | 38.52 | 742.2 | 81.13 | 23.19 |
| Example 2 | 38.21 | 741.1 | 80.88 | 23.04 |
| Example 3 | 38.32 | 741.4 | 80.78 | 23.12 |
| Example 4 | 38.11 | 740.7 | 80.56 | 23.06 |
| Example 5 | 38.26 | 741.2 | 81.02 | 23.15 |
| Comparative example 1 | 37.89 | 739.68 | 80.12 | 22.76 |
| Comparative example 2 | 37.28 | 738.74 | 79.88 | 22.67 |
| Comparative example 3 | 37.46 | 739.63 | 80.34 | 22.53 |
| Comparative example 4 | 38.01 | 739.36 | 80.56 | 22.88 |
| Comparative example 5 | 36.87 | 738.21 | 80.12 | 22.24 |
As can be seen from table 1:
compared with the HJT structures in comparative examples 1 to 5, the HJT structures provided by the invention are adopted in the solar cells in the examples 1 to 5, so that the open-circuit voltage, the short-circuit current and the filling factor are improved, and the conversion efficiency of the cells is effectively improved;
the intrinsic layer and the doped layer are replaced by the hydrogenated silicon oxide film, so that the passivation effect, the light transmittance and the matching degree with the refractive index of the TCO film can be effectively improved, the optical loss is reduced to the maximum extent, the open-circuit voltage and the short-circuit current are favorably improved, and meanwhile, the doped microcrystalline silicon film is arranged between the doped hydrogenated amorphous silicon oxide film and the TCO film, so that the contact resistance with the TCO film can be reduced, and the filling factor is effectively improved.
The present invention is described in detail by the above embodiments, but the present invention is not limited to the above detailed structural features, which means that the present invention must not be implemented by the above detailed structural features. It should be understood by those skilled in the art that any modifications, equivalent substitutions of selected elements of the present invention, additions of auxiliary elements, selection of specific forms, etc., are intended to fall within the scope and disclosure of the present invention.
The preferred embodiments of the present invention have been described in detail, however, the present invention is not limited to the specific details of the above embodiments, and various simple modifications may be made to the technical solution of the present invention within the technical idea of the present invention, and these simple modifications are within the protective scope of the present invention.
It should be noted that the various technical features described in the above embodiments can be combined in any suitable manner without contradiction, and the invention is not described in any way for the possible combinations in order to avoid unnecessary repetition.
In addition, any combination of the various embodiments of the present invention can be made, and the same should be considered as the disclosure of the present invention as long as the idea of the present invention is not violated.
Claims (10)
1. The HJT solar cell is characterized by comprising an N-type silicon wafer, wherein a first intrinsic hydrogenated amorphous silicon oxide thin film, a P-type doped microcrystalline silicon thin film, a first TCO thin film and a first collector electrode are sequentially stacked from inside to outside on one side of the front surface of the N-type silicon wafer; the second intrinsic hydrogenated amorphous silicon oxide film, the N-type doped microcrystalline silicon film, the second TCO film and the second collector electrode are sequentially arranged on one side of the back surface of the N-type silicon wafer in a stacked mode from inside to outside.
2. The HJT solar cell of claim 1, wherein the first intrinsic hydrogenated amorphous silicon oxide thin film and the second intrinsic hydrogenated amorphous silicon oxide thin film are both 10-15 nm thick;
preferably, the thicknesses of the P-type doped hydrogenated amorphous silicon oxide film and the N-type doped hydrogenated amorphous silicon oxide film are both 5-10 nm;
preferably, the thicknesses of the P-type doped microcrystalline silicon thin film and the N-type doped microcrystalline silicon thin film are both 10-15 nm.
3. A manufacturing apparatus for an HJT solar cell according to claim 1 or 2, characterized in that the manufacturing apparatus comprises a Cat-CVD apparatus, and the Cat-CVD apparatus comprises a first process chamber and a first buffer chamber, a second process chamber and a second buffer chamber, a third process chamber and a third buffer chamber, a fourth process chamber and a fourth buffer chamber, and a fifth process chamber and a fifth buffer chamber, so as to sequentially manufacture different kinds of thin films.
4. The apparatus for manufacturing HJT solar cell according to claim 3, wherein a preheating chamber is provided before the first process chamber;
preferably, a hot wire is arranged in the first process cavity and used for decomposing the raw materials; the second process cavity, the third process cavity, the fourth process cavity and the fifth process cavity are all arranged the same as the first process cavity.
5. A method for manufacturing an HJT solar cell, using the manufacturing apparatus of claim 3 or 4, the method comprising:
(1) Preparing an N-type silicon wafer after texturing and cleaning;
(2) The silicon wafer is transferred into a first process cavity, the first intrinsic hydrogenated amorphous silicon oxide film and the second intrinsic hydrogenated amorphous silicon oxide film are respectively manufactured on the surfaces of the two sides of the N-type silicon wafer, and then the silicon wafer is transferred into a first buffer cavity for buffering;
(3) Transferring the silicon wafer into a second process cavity, manufacturing the P-type doped hydrogenated amorphous silicon oxide film on the first intrinsic hydrogenated amorphous silicon oxide film, and transferring the silicon wafer into a second buffer cavity for buffering; then transferring the silicon wafer into a third process cavity, manufacturing the P-type doped microcrystalline silicon film on the P-type doped hydrogenated amorphous silicon oxide film, and transferring the silicon wafer into a third buffer cavity for buffering;
(4) Transferring the second intrinsic hydrogenated amorphous silicon oxide film into a fourth process cavity, manufacturing the N-type doped hydrogenated amorphous silicon oxide film on the second intrinsic hydrogenated amorphous silicon oxide film, and transferring the second intrinsic hydrogenated amorphous silicon oxide film into a fourth buffer cavity for buffering; then transferring the silicon wafer into a fifth process cavity, manufacturing the N-type doped microcrystalline silicon film on the N-type doped hydrogenated amorphous silicon oxide film, and transferring the silicon wafer into a fifth buffer cavity for buffering;
(5) Manufacturing a first TCO film and a second TCO film on the P-type doped microcrystalline silicon film and the N-type doped microcrystalline silicon film respectively;
(6) Manufacturing a first collector electrode and a second collector electrode on the first TCO film and the second TCO film respectively to obtain the HJT solar cell;
wherein, the step (3) and the step (4) are not in sequence.
6. The method of claim 5, wherein the step (1) further comprises preheating the N-type silicon wafer;
preferably, the preheating is carried out in a preheating chamber;
preferably, the preheating temperature in the step (1) is 100-200 ℃;
preferably, the preheating of step (1) is carried out at a vacuum degree of < 0.001 Pa;
preferably, the temperature of the hot wire in the first process chamber in the step (2) is 1500-1900 ℃;
preferably, the temperature of the hot wire in the process chamber corresponding to each of the step (3) and the step (4) is 1600-2200 ℃.
7. The method of claim 5 or 6, wherein the distances from the filaments to the pre-deposition surface in the process chambers corresponding to steps (2) - (4) are 40-150 mm;
preferably, the pressure intensity in the process chambers respectively corresponding to the steps (2) - (4) is 1-50 Pa;
preferably, the cavity temperature of the process cavity respectively corresponding to the steps (2) - (4) is 100-300 ℃;
preferably, the buffering of steps (2) - (4) comprises simultaneously performing the vacuum pumping and the inert gas purging.
8. The method for fabricating HJT solar cell according to any of claims 5 to 7, wherein the raw materials for fabricating the first intrinsic hydrogenated amorphous silicon oxide thin film and the second intrinsic hydrogenated amorphous silicon oxide thin film of step (2) comprise a first silicon source, an oxygen source and a hydrogen source;
preferably, the flow ratio of the first silicon source, the oxygen source and the hydrogen source is 1 (0.1-10) to 5-20;
preferably, the raw materials for manufacturing the P-type doped hydrogenated amorphous silicon oxide film in the step (3) comprise a first silicon source, an oxygen source, a hydrogen source and a first doping source;
preferably, the flow ratio of the first silicon source, the oxygen source, the hydrogen source and the first doping source is 1 (0.1-10): (5-20): 0.05-0.3);
preferably, the raw materials for manufacturing the P-type doped microcrystalline silicon thin film in the step (3) comprise a second silicon source, a hydrogen source and a first doping source;
preferably, the flow ratio of the second silicon source, the hydrogen source and the first doping source is 1 (20-100) to 0.3-0.7;
preferably, the first dopant source comprises diborane.
9. The method for fabricating HJT solar cell as claimed in any of claims 5 to 8, wherein the raw materials for fabricating the N-doped hydrogenated amorphous silicon oxide thin film in step (4) include a first silicon source, an oxygen source, a hydrogen source and a second doped source;
preferably, the flow ratio of the first silicon source, the oxygen source, the hydrogen source and the second doping source is 1 (0.1-10): (5-20): 0.05-0.3);
preferably, the raw materials for manufacturing the N-type doped microcrystalline silicon thin film in the step (4) comprise a second silicon source, a hydrogen source and a second doping source;
preferably, the flow ratio of the second silicon source, the hydrogen source and the second doping source is 1 (20-100) to 0.1-0.5;
preferably, the second doping source comprises a phosphane.
10. The method according to claim 8 or 9, wherein the first silicon source comprises tetraethoxysilane;
preferably, the second silicon source comprises silane;
preferably, the oxygen source comprises ozone;
preferably, the hydrogen source comprises hydrogen gas.
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015185593A (en) * | 2014-03-20 | 2015-10-22 | 三菱電機株式会社 | Solar cell and manufacturing method of the same |
| CN106024917A (en) * | 2016-05-31 | 2016-10-12 | 英利能源（中国）有限公司 | Solar cell and solar cell module |
| EP3486953A1 (en) * | 2017-11-15 | 2019-05-22 | Beijing Juntai Innovation Technology Co., Ltd | Heterojunction solar cell and preparation method thereof |
| CN110735125A (en) * | 2019-09-27 | 2020-01-31 | 上海理想万里晖薄膜设备有限公司 | PECVD equipment for manufacturing heterojunction solar cell and film coating method |
| CN111509058A (en) * | 2020-05-02 | 2020-08-07 | 熵熠(上海)能源科技有限公司 | Heterojunction solar cell with amorphous silicon oxide film as intrinsic passivation layer |
| CN112802910A (en) * | 2021-02-09 | 2021-05-14 | 通威太阳能（成都）有限公司 | High-efficiency silicon heterojunction solar cell and preparation method thereof |
| CN113451431A (en) * | 2021-07-06 | 2021-09-28 | 安徽华晟新能源科技有限公司 | Heterojunction solar cell and preparation method thereof |
-
2022
- 2022-08-22 CN CN202211005209.8A patent/CN115172505A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015185593A (en) * | 2014-03-20 | 2015-10-22 | 三菱電機株式会社 | Solar cell and manufacturing method of the same |
| CN106024917A (en) * | 2016-05-31 | 2016-10-12 | 英利能源（中国）有限公司 | Solar cell and solar cell module |
| EP3486953A1 (en) * | 2017-11-15 | 2019-05-22 | Beijing Juntai Innovation Technology Co., Ltd | Heterojunction solar cell and preparation method thereof |
| CN110735125A (en) * | 2019-09-27 | 2020-01-31 | 上海理想万里晖薄膜设备有限公司 | PECVD equipment for manufacturing heterojunction solar cell and film coating method |
| CN111509058A (en) * | 2020-05-02 | 2020-08-07 | 熵熠(上海)能源科技有限公司 | Heterojunction solar cell with amorphous silicon oxide film as intrinsic passivation layer |
| CN112802910A (en) * | 2021-02-09 | 2021-05-14 | 通威太阳能（成都）有限公司 | High-efficiency silicon heterojunction solar cell and preparation method thereof |
| CN113451431A (en) * | 2021-07-06 | 2021-09-28 | 安徽华晟新能源科技有限公司 | Heterojunction solar cell and preparation method thereof |
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