CN115172363B - Application of copolymer organic field effect transistor in multi-mode power integrated circuit - Google Patents
Application of copolymer organic field effect transistor in multi-mode power integrated circuit Download PDFInfo
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- CN115172363B CN115172363B CN202210943666.5A CN202210943666A CN115172363B CN 115172363 B CN115172363 B CN 115172363B CN 202210943666 A CN202210943666 A CN 202210943666A CN 115172363 B CN115172363 B CN 115172363B
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- 238000006243 chemical reaction Methods 0.000 claims abstract description 3
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- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 10
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- 238000000137 annealing Methods 0.000 claims description 8
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- 238000010438 heat treatment Methods 0.000 claims description 4
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- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910002601 GaN Inorganic materials 0.000 claims description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
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- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- 230000007613 environmental effect Effects 0.000 abstract description 4
- 230000017525 heat dissipation Effects 0.000 abstract 1
- 230000010354 integration Effects 0.000 abstract 1
- RFFLAFLAYFXFSW-UHFFFAOYSA-N 1,2-dichlorobenzene Chemical compound ClC1=CC=CC=C1Cl RFFLAFLAYFXFSW-UHFFFAOYSA-N 0.000 description 13
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- 238000009210 therapy by ultrasound Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0218—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of field effect structures
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/464—Lateral top-gate IGFETs comprising only a single gate
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
- H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
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- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
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- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
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- Y02E10/549—Organic PV cells
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Abstract
The invention provides an application of a copolymer organic field effect transistor in a multi-mode power integrated circuit, which is characterized in that the copolymer organic field effect transistor is utilized to build and manufacture the organic semiconductor multi-mode power integrated circuit, the multi-mode control circuit can realize the N-type/P-type polarity conversion of a device by changing grid bias voltage, the switching of an H bridge, a single-stage amplifier and an inverter can be realized by changing external grid signals, and the circuit has the advantages of simple manufacturing process, higher integration level, low heat dissipation, low cost, environmental protection and no more pollution.
Description
Technical Field
The invention relates to the field of semiconductor device design and manufacture, in particular to application of a copolymer organic field effect transistor in a multi-mode power integrated circuit.
Background
The characteristics of high energy consumption, high emission, high cost, complex production flow and the like of the traditional integrated circuit industry can not meet the requirement of green development. The organic integrated circuit based on the copolymer semiconductor material solves the problem of dependence of the traditional integrated circuit on complex processes, materials and equipment through new materials, new devices, new processes and new designs, and has the advantages of environmental friendliness, low cost, high performance, flexibility and the like.
The copolymer organic field effect transistor has the advantages of low production cost, rich material sources, environmental friendliness, simple process steps, flexibility and the like, and has a plurality of application scenes, including being applicable to the fields of radio frequency identification tags, biosensors, flexible displays, photoelectric detectors and the like. The H-bridge electrode driving chip is used as a typical intelligent power integrated circuit and widely applied to various fields such as direct current and stepper motor driving, industrial robots, military operations and the like, but the power switching devices used by the H-bridge electrode driving chip are MOSFET, BJT, IGBT and other power devices. Because the power integrated circuits manufactured by the devices have the problems of high manufacturing cost, complex process, multiple process flows, package requirement and the like, and the traditional devices only can display one polarity due to the fact that the H-bridge circuits built by the devices are fixed, the functions which can be realized by the H-bridge circuits are limited, different functions can not be realized according to the mode of changing the external grid connection and the grid voltage, no scientific researchers apply the organic field effect transistor as a power device to a driving circuit at present, and the multi-mode power integrated circuits manufactured by utilizing the organic field effect transistor can well realize the aims of low cost, high performance and environmental friendliness.
Disclosure of Invention
In view of this, the invention provides an application of a copolymer organic field effect transistor in a multi-mode power integrated circuit, and the special bipolar on characteristic of the copolymer organic semiconductor device manufactured by the invention is utilized to realize the multiplexing of the power device, namely, the multi-mode function of the circuit can be realized by changing the range of the external grid voltage variation of the device and the range of the forward on and reverse off working areas, and the multi-mode working capacity of a single-stage amplifier, an inverter and an H-bridge circuit can be realized by simply changing the variation of the external grid voltage of the device through a peripheral control circuit.
The invention aims at realizing the following technical scheme:
the invention provides application of a copolymer organic field effect transistor in a multi-mode power integrated circuit, wherein the organic field effect transistor is divided into a bottom gate top contact, a bottom gate bottom contact, a top gate bottom contact and a top gate top contact, the bottom gate top contact and the bottom gate bottom contact are easy to lose efficacy due to the fact that a semiconductor layer is exposed outside and are not suitable for the construction of the integrated circuit, and the structure of the top gate top contact is easy to damage the semiconductor layer due to the fact that a source drain electrode is arranged on the semiconductor layer; the top gate bottom contact structure is adopted for the construction of the integrated circuit, and the dielectric layer is arranged above the semiconductor layer in the top gate bottom contact structure, so that a certain protection effect is achieved on the lower semiconductor layer;
the invention relates to an application of a copolymer organic field effect transistor in a multi-mode power integrated circuit, in particular to a multi-mode power integrated circuit constructed by utilizing a copolymer organic field effect transistor with a top gate bottom contact structure and an external connection line, and the N-type/P-type polarity conversion of a device is realized by changing the gate bias voltage of the copolymer organic field effect transistor in the multi-mode control circuit, wherein the copolymer organic field effect transistor with the top gate bottom contact structure comprises a substrate, a source drain electrode, a semiconductor layer, a dielectric layer and a gate electrode, and the preparation process of the copolymer organic field effect transistor with the top gate bottom contact structure needs to satisfy the following preparation process:
step S1, evaporating a metal source/drain electrode and a lead on a substrate: adsorbing a mask on a substrate, putting the mask into an evaporation instrument, and evaporating metal Ni and Cu in sequence to form a metal source drain electrode and a lead;
step S2, manufacturing a semiconductor layer: adsorbing the substrate with the deposited source and drain electrodes and leads on a spin coater, dripping 3-15mg/ml DPPT-TT/DCB solution on the surface, and continuously applying acceleration of 200-800rpm/min and 150-250rpm/s for 8-13s; acceleration of 1000-2000rpm/min,200-800rpm/s lasts for 40-100s; spin-coating the substrate surface at 0rpm/min and acceleration of 200-800rpm/s for 2-8 s;
step S3, manufacturing a dielectric layer: dripping 40-150mg/ml PMMA/NBA solution onto the surface, and keeping the acceleration at 200-800rpm/min and 150-250rpm/s for 2-5s; acceleration of 1000-2000rpm/min,200-800rpm/s lasts for 40-100s; spin-coating the acceleration of 200-800rpm/s for 2-8s on the surface of the semiconductor layer at 0 rpm/min;
step S4, evaporating a gate electrode: aligning an optical microscope with a grid mask plate, adsorbing the mask plate to the surface of a substrate, and then placing the substrate into an evaporation instrument to evaporate metal Cu;
the design of the metal mask is to design a specific metal mask according to different circuit structures by layout design software to manufacture a source electrode, a drain electrode, a lead wire and a gate electrode;
the structure of the organic field effect transistor includes any one of a drift region structure, an interdigital structure, a circular structure, and a racetrack structure.
Preferably, the substrate material comprises a glass substrate, flexible plastic, bulk silicon SOI, silicon carbide, gallium nitride, gallium arsenide, indium phosphide, or silicon germanium material.
Preferably, in the step S2, the concentration of DPPT-TT in the DPPT-TT/DCB solution is 5mg/ml;
preferably, in step S2, the spin-coating parameters of the DPPT-TT/DCB solution are set to be at 500rpm/min and 200rpm/S acceleration for 10S; acceleration at 1500rpm/min,500rpm/s was continued for 60s; acceleration at 0rpm/min,500rpm/s was continued for 5s;
preferably, in step S2, the thermal annealing process includes: heating at 80deg.C for 5min, and annealing at 150deg.C for 1 hr;
preferably, in the step S3, specifically, the concentration of PMMA in the PMMA/NBA solution is 80mg/ml;
preferably, in the step S3, specifically, the spin-coating parameter of the PMMA/NBA solution is set to 500rpm/min, and the acceleration of 200rpm/S lasts for 3S; acceleration at 1500rpm/min,500rpm/s was continued for 60s; acceleration at 0rpm/min,500rpm/s was continued for 5s;
preferably, in step S3, the thermal annealing process includes: and then annealed at 80℃for 2h.
Preferably, the manufacturing method of the metal electrode comprises evaporation plating or magnetron sputtering technology; further preferably, the step S4 is specific toIs evaporated at a rate of 5nm, followed by +.>70nm of metallic Cu is evaporated at a rate of 70nm, followed by +.>Metal Cu with a rate of 5nm is evaporated.
The beneficial effects of the invention are as follows:
the traditional power device is used as a switching transistor, so that the polarity of the device is limited to be unique, the device is used for constructing an H bridge circuit, and the circuit can only be an inverter formed by two N-type devices or an inverter formed by two P-type devices or an N-type and P-type CMOS inverter, and the conventional H bridge circuit has two forms, namely an upper bridge P tube, a lower bridge N tube and four N tubes, so that in actual application, actual personnel need to select transistors with different polarities according to specific circuit design conditions, and in the application of the copolymer organic field effect transistor in the multi-mode power integrated circuit, the threshold voltage and the subthreshold swing of the device can be directly regulated and controlled through the selection of organic semiconductor materials, the concentration of the organic semiconductor materials and the control of a spin coating process, and the threshold voltage can be determined by the threshold voltage; the device may exhibit either N-type or P-type conduction characteristics by varying the gate voltage of the device.
The copolymer organic field effect transistor is applied to a multi-mode power integrated circuit, the polarity of the transistor can be changed only by changing the externally-applied grid voltage, and the polarity of a transistor device can be changed according to the required circuit design requirement, so that the flow of circuit design is reduced, and the copolymer organic field effect transistor has a good application prospect; in addition, the specific integrated circuit structure can simply change the connection mode of the external grid electrode of the device and the grid voltage bias through a servo control circuit, and the inverter can be realized by calling two transistors on one side, and the functions of the two N-type, the two P-type, the CMOS inverter and the single-stage amplifier can be realized, so that the multi-mode function of the circuit can be realized by only changing the grid voltage.
The traditional structure circuit has low voltage endurance and needs to adopt an ESD protection circuit, but when the copolymer organic field effect transistor is applied to the multi-mode power integrated circuit, the specifically designed circuit is completely suitable for the conventional circuit application because the voltage endurance of the used device is very high (more than 2.0 kV), so that the additional circuit structures such as the ESD protection circuit and the like are not needed to be added.
The copolymer organic field effect transistor adopts a top gate bottom structure in the application of the multi-mode power integrated circuit, the dielectric layer is arranged above the semiconductor layer, the semiconductor layer is protected, the device is difficult to fail, and encapsulation is not needed.
The copolymer organic field effect transistor is applied to the multi-mode power integrated circuit, and the manufactured integrated circuit has simple process, small environmental pollution and easily obtained materials.
Drawings
FIG. 1 is a three-dimensional perspective view of a copolymer organic semiconductor multi-mode power integrated circuit; wherein: copolymer organic semiconductor multimode power integrated circuit: 1-substrate, 2-source drain electrode metal, lead 3-semiconductor layer, 4-dielectric layer, 5-gate metal.
FIG. 2 is a schematic diagram of a process flow for fabricating a copolymer organic semiconductor multi-mode power integrated circuit.
FIG. 3 is a schematic diagram of a copolymer organic semiconductor multi-mode power integrated circuit, wherein: 6-input terminal V DD 7-grid, 8-output end, 9-ground end GND;
FIG. 4 is a physical diagram of the fabrication of the copolymer organic semiconductor multi-mode power integrated circuit of FIG. 1;
fig. 5 is a waveform diagram of test input and output of the copolymer organic semiconductor multi-mode power integrated circuit fabricated in example 1.
Detailed Description
The invention is described in detail below with reference to the drawings and specific embodiments, but the invention is not limited to these embodiments only. The invention is intended to cover any alternatives, modifications, equivalents, and variations that fall within the spirit and scope of the invention. In the following examples of the present invention, specific details are set forth in order to provide a thorough understanding of the present invention, and will fully appreciate to those skilled in the art without such details.
The sources of the raw materials of the kits used in the following examples and test examples are as follows:
DPPT-TT Nanjing research technology Co., ltd
1, 2-Dichlorobenzene (DCB) solution: sigma-Aldrich Co
PMMA, shanghai Hans chemical Co., ltd
Butyl Acetate (NBA) solution: sigma-Aldrich Co
Example 1
The embodiment of the invention provides an implementation method of a copolymer organic semiconductor power driving circuit, as shown in fig. 2, including but not limited to an H-bridge circuit with a top gate bottom contact structure, and the manufacturing process is as follows:
step S1, evaporating a metal source drain electrode and a lead on a substrate: respectively ultrasonically treating 0.5mm thick glass substrate with acetone, alcohol and deionized water for 5min, then placing on a heating table, oven drying at 100deg.C for 10min, adsorbing mask on the glass substrate, using metal mask to form four transistors, wherein the sources of upper bridges on two sides are respectively connected with corresponding lower bridge drains, the drains of upper bridges on two sides are connected to form an input end, the sources of lower bridges on two sides are connected to form a grounding end, and placing in a vapor deposition instrument to vapor deposit 5nm metal Ni and 40nm metal Cu, whereinIs evaporated at a rate of 5nm, then +.>Is evaporated at a rate of 5nm, followed by +.>30nm of metallic Cu is evaporated at a rate of +.>Metal Cu with the speed of 5nm is evaporated;
step S2, manufacturing a semiconductor layer: and respectively carrying out ultrasonic treatment on the glass substrate deposited with the source and drain electrodes and the lead by deionized water and alcohol for 3min, then drying by nitrogen, and putting into an ultraviolet ozone machine for treatment for 30min. Then adsorbing the glass substrate onto a spin coater, dripping 5mg/ml DPPT-TT/DCB solution onto the surface, and keeping the acceleration of 200rpm/s for 10s at 500 rpm/min; acceleration at 1500rpm/min,500rpm/s was continued for 60s; spin-coating the substrate surface at an acceleration of 500rpm/s for 5s at 0rpm/min, then heating at 80 ℃ for 5min, and then annealing at 150 ℃ for 1h;
step S3, manufacturing a dielectric layer: 80mg/ml PMMA/NBA solution was dropped onto the surface for 3s at an acceleration of 500rpm/min,200 rpm/s; acceleration at 1500rpm/min,500rpm/s was continued for 60s; spin-coating the surface of the semiconductor layer at an acceleration of 500rpm/s for 5s at 0rpm/min, and then annealing at 80 ℃ for 2h;
step S4, evaporating a gate electrode: aligning the grid mask plate by using an optical microscope, adsorbing the mask plate to the surface of the glass substrate, and then placing the glass substrate into an evaporation instrument to evaporate 80nm metal Cu, whereinIs evaporated at a rate of 5nm, followed by70nm of metallic Cu is evaporated at a rate of 70nm, followed by +.>Metal Cu with a rate of 5nm is evaporated.
FIG. 1 is a 3D schematic diagram of a copolymer organic semiconductor multi-mode power integrated circuit of a copolymer organic half field effect transistor according to a top gate bottom contact structure, and FIG. 3 is a layout diagram of an integrated circuit constructed corresponding to FIG. 1; FIG. 4 is a physical diagram showing the fabrication of the copolymer organic semiconductor multi-mode power integrated circuit of FIG. 1;
the testing process of the copolymer organic semiconductor multi-mode power integrated circuit in this embodiment is as follows:
device power supply terminal V in the copolymer organic semiconductor multi-mode power integrated circuit DD Applying a DC power source to effect at two diagonal organic fieldsA PWM signal is applied to the gate of the transistor, wherein the device may exhibit either N-type or P-type due to the material characteristics of the device, so that the gate of the device is forward biased or reverse biased to cause the device to exhibit either N-type or P-type. As shown in fig. 5, PWM signals are applied to the two diagonal transistors, the PWM signals are set to 100Hz, the duty ratio is 50%, a resistor of 1mΩ is connected to both ends of the load, oscilloscopes are connected to both ends of the resistor, two output waveforms are respectively an a waveform close to the upper tube and a b waveform close to the lower tube, and then the output waveform c waveform of the circuit load can be obtained by subtracting the b waveform from the a waveform of the output waveform of the two oscilloscopes. By observing the analysis output waveform, it can be found that the device can work normally.
The working principle of the polymer organic semiconductor multi-mode power integrated circuit in the embodiment is as follows:
when the PWM signal output high level is applied to the gate of the device, the device is found to be N-type at this time, and is turned on due to the characteristics of the semiconductor material, so that the output is also high level; when the low level of the PWM signal output is applied to the gate of the device, the device is in an off state at this time, so the output level is low.
Claims (8)
1. The application of the copolymer organic field effect transistor in the multi-mode power integrated circuit is characterized in that the copolymer organic field effect transistor with a top gate and bottom contact structure and an external connection line are utilized to construct the multi-mode power integrated circuit, and the N-type/P-type polarity conversion of the device is realized by changing the grid bias voltage of the copolymer organic field effect transistor; the preparation process of the copolymer organic field effect transistor with the top gate bottom contact structure comprises the following preparation processes:
step S1, evaporating a metal source/drain electrode and a lead on a substrate: adsorbing a mask on a substrate, putting the mask into an evaporation instrument, and evaporating metal Ni and Cu in sequence to form a metal source drain electrode and a lead;
step S2, manufacturing a semiconductor layer: adsorbing the substrate with the deposited source and drain electrodes and leads on a spin coater, dripping 3-15mg/ml DPPT-TT/DCB solution on the surface, and continuously maintaining the acceleration at 200-800rpm and 150-250rpm/s for 8-13s; acceleration of 1000-2000rpm, 200-800rpm/s lasts 40-100s; spin-coating the substrate surface at 0rpm and acceleration of 200-800rpm/s for 2-8 s;
step S3, manufacturing a dielectric layer: dripping 40-150-mg/ml PMMA/NBA solution onto the surface, and continuously accelerating at 200-800rpm and 150-250rpm/s for 2-5s; acceleration of 1000-2000rpm, 200-800rpm/s lasts 40-100s; spin-coating the acceleration of 0rpm, 200-800rpm/s for 2-8s on the surface of the semiconductor layer;
step S4, evaporating a gate electrode: aligning an optical microscope with a grid mask plate, adsorbing the mask plate to the surface of a substrate, and then placing the substrate into an evaporation instrument to evaporate metal Cu;
in step S2, the method further includes a thermal annealing process: heating at 80deg.C for 5min, and annealing at 150deg.C for 1 hr;
in step S3, the method further includes a thermal annealing process: and then annealed at 80℃for 2h.
2. Use of a copolymer organic field effect transistor according to claim 1 in a multi-mode power integrated circuit, wherein in step S2 the concentration of DPPT-TT in the DPPT-TT/DCB solution is 5mg/ml.
3. The use of a copolymer organic field effect transistor in a multi-mode power integrated circuit according to claim 1, wherein in step S2 the spin-coating parameters of the DPPT-TT/DCB solution are set to last 10S at an acceleration of 500rpm, 200 rpm/S; 1500 Acceleration at 500rpm/s was continued for 60s; acceleration at 0rpm,500 rpm/s was continued for 5s.
4. Use of a copolymer organic field effect transistor according to claim 1 in a multi-mode power integrated circuit, wherein in step S3 the concentration of PMMA in the PMMA/NBA solution is 80 mg/ml.
5. Use of a copolymer organic field effect transistor according to claim 1 in a multi-mode power integrated circuit, wherein in step S3 the PMMA/NBA solution spin-coating parameters are set to 500rpm, acceleration of 200rpm/S for 3S;1500 Acceleration at 500rpm/s was continued for 60s; acceleration at 0rpm,500 rpm/s was continued for 5s.
6. Use of a copolymer organic field effect transistor in a multi-mode power integrated circuit according to claim 1 wherein the substrate material comprises a glass substrate, a flexible plastic, bulk silicon SOI, silicon carbide, gallium nitride, gallium arsenide, indium phosphide or silicon germanium material.
7. The use of the copolymer organic field effect transistor according to claim 1 in a multi-mode power integrated circuit, wherein in step S4, metal Cu of 5nm is evaporated at a rate of 0.1 a/S, then metal Cu of 70nm is evaporated at a rate of 0.5 a/S, and finally metal Cu of 5nm is evaporated at a rate of 0.1 a/S.
8. The use of a copolymer organic field effect transistor in a multi-mode power integrated circuit according to claim 1, wherein the multi-mode power integrated circuit is an H-bridge circuit.
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| CN101800286A (en) * | 2009-02-11 | 2010-08-11 | 中国科学院微电子研究所 | Top gate structure based preparation method of integrated circuit of organic field effect transistor |
| CN113451514A (en) * | 2021-06-10 | 2021-09-28 | 华东师范大学 | Bipolar-improved polymer organic thin film transistor and preparation method thereof |
| CN114300616A (en) * | 2022-01-05 | 2022-04-08 | 南京邮电大学 | Integrated power device based on copolymer organic semiconductor |
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| CN101800286A (en) * | 2009-02-11 | 2010-08-11 | 中国科学院微电子研究所 | Top gate structure based preparation method of integrated circuit of organic field effect transistor |
| CN113451514A (en) * | 2021-06-10 | 2021-09-28 | 华东师范大学 | Bipolar-improved polymer organic thin film transistor and preparation method thereof |
| CN114300616A (en) * | 2022-01-05 | 2022-04-08 | 南京邮电大学 | Integrated power device based on copolymer organic semiconductor |
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