CN100544052C - A kind of field-effect transistor of organic semiconducting materials and preparation method - Google Patents
A kind of field-effect transistor of organic semiconducting materials and preparation method Download PDFInfo
- Publication number
- CN100544052C CN100544052C CNB2006100893435A CN200610089343A CN100544052C CN 100544052 C CN100544052 C CN 100544052C CN B2006100893435 A CNB2006100893435 A CN B2006100893435A CN 200610089343 A CN200610089343 A CN 200610089343A CN 100544052 C CN100544052 C CN 100544052C
- Authority
- CN
- China
- Prior art keywords
- organic
- insulating barrier
- semiconductor layer
- drain electrode
- deposition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Abstract
The present invention discloses a kind of field-effect transistor and preparation method of organic pyrene oxygen radical semi-conducting material, and its structure comprises substrate, grid, insulating barrier, organic pyrene oxygen radical semiconductor layer, source electrode and drain electrode; Its method comprises the deposition and the patterning of gate metal; The deposition of insulating barrier; The deposition of organic pyrene oxygen radical semi-conducting material; The deposition of source electrode and drain electrode and patterning thereof.The organic field effect tube of the present invention's preparation is with 2-pyrenyl-4,4,5, and 5-tetramethyl imidazoline-1-oxygen base free radical is an organic semiconducting materials, and preparation technology is simple, and is with low cost.Operate under low-voltage, demonstrate good field effect behavior, mobility is up to 0.1cm
2/ Vs, on-off ratio is greater than 10
4, threshold voltage is-0.6V that sub-threshold slope is 0.54V/decade.Organic field effect tube of the present invention can be used in active driving, low-end IC, fields such as transducer.
Description
Technical field
The invention belongs to field-effect transistor, relate to a kind of field-effect transistor of organic semiconducting materials, specifically, relate to the application of a kind of novel pyrene oxygen radical in organic field effect tube.
Background technology
Since Tsumura et al. (Tsumura, A.; Koezuka, H.; Ando, T.Appl.Phys.Lett.1986,49,1210) since the report about organic field effect tube (OFETs), organic field effect tube is as following organic electronic device key element, because it is in Active Matrix LCD At, the organic integration circuit, the potential using value of aspects such as electronic trademark has obtained people's extensive concern.Characteristics such as compare with inorganic transistors, OFETs has low cost, and is in light weight, and pliability is good.In recent years, OFETs has obtained significant progress.Wherein the field-effect mobility of pentacene has surpassed 1.5cm
2V
-1s
-1(Nelson, S.F.; Lin, Y.Y.; Gundlach, D.J.; Jackson, T.N.Appl.Phys.Lett.1998,72,1854), can compare favourably with amorphous silicon.However, people wish the more high performance OFETs of preparation.People adopt two kinds of methods to improve the carrier mobility of OFETs, on-off ratio and threshold voltage: the research of new OFETs preparation method's research and new organic semiconducting materials.Especially the synthetic and design of new organic semi-conductor has promoted the development of OFETs greatly.People have synthesized pentacene (1:Meng, the H. that comprises replacement; Bendikov, M.; Mitchell, G.; Helgeson, R.; Wudl, F.; Bao, Z.; Siegrist, T.; Kloc C.; Chen, C.H.; Adv.Mater.2003,15,1090.2:Sakamoto, Y.; Suzuki, T.; Kobayashi, M.; Gao, Y.; Fukai, Y.; Inoue, Y.; Sato F.; Tokito, S.J.Am.Chem.Soc.2004,126,8138.), the carbazole compound (Li, the Y. that replace; Wu, Y.; Gardner S.; Ong, B.S.Adv.Mater.2005,17,849.), oligomer (Ito, the K. of anthracene; Suzuki, T.; Sakamoto, Y.; Kubota, D.; Inoue, Y.; Sato F.; Tokito, S.Angew.Chem., Int.Ed.2003,42,1159.) and derivative (Zhang, the H. of pyrene; Wang, Y.; Shao, K.; Liu, Y.; Chen, S.; Qiu, W.; Sun, X.; Qi, T.; Ma, Y.; Yu, G.; Su Z.; Zhu, D.Chem.Commun.2005,755) etc. multiple molecular system.
The organic free radical molecule is normally paramagnetic, has one or more not paired electronics.Because its potential application people aspect molecular electronic device have launched a large amount of research.People infer that organic free radical (for example 1,2,3,4,5-pentaphene base cyclopentadienyl free radical) is applicable to organic film device (1:Lamansky S.; Thompson, M.E.Chem.Mater.2002,14,109.2:Andr é, J.-J.; Brinkmann, M.Synth.Met.1997,90,211.).The complex of employing transition metal such as Noro and organic free radical has successfully made organic metal film field-effect transistor (Nor, S.-I.; Chang, H.-C.; Takenobu, T.; Murayama, Y.; Kanbara, T.; Aoyama, T.; Sassa, T.; Wada, T.; Tanaka D.; Kitagawa, S.; Iwasa, Y.; Akutagawa T.; Nakamura, T.J.Am.Chem.Soc.2005,127,10012.).Therefore, organic free radical is a class new O FETs semi-conducting material.Yet the organic free radical material that is used for the OFETs semi-conducting material is also considerably less.
Summary of the invention
In order to improve the carrier mobility of organic field effect tube, on-off ratio and threshold voltage, the objective of the invention is to be to provide a class use the organic free radical material as semi-conducting material, can under low-voltage, operate, demonstrate organic field effect tube of good field effect behavior and preparation method thereof.
A first aspect of the present invention, a kind of field-effect transistor that adopts organic semiconducting materials, adopt upper electrode arrangement to comprise:
Substrate, intercalation electrode lead-in wire on substrate;
Grid, this grid is produced on the one side of substrate, with the contact conductor conducting;
Insulating barrier, this insulating barrier is produced on the another side of grid;
Organic pyrene oxygen radical semiconductor layer, this organic pyrene oxygen radical semiconductor layer is produced on the another side of insulating barrier;
Source electrode and drain electrode, source electrode and drain electrode are produced on the another side of organic pyrene oxygen radical semiconductor layer.
The lower electrode arrangement that the present invention adopts comprises:
Substrate, intercalation electrode lead-in wire on substrate;
Grid, this grid is produced on the one side of substrate, with the contact conductor conducting;
Insulating barrier, this insulating barrier is produced on the another side of grid;
Source electrode and drain electrode, source electrode and drain electrode are produced on the another side of insulating barrier;
Organic pyrene oxygen radical semiconductor layer, this organic pyrene oxygen radical semiconductor layer be produced on source electrode and drain electrode on.
Described organic pyrene oxygen radical semiconductor layer is a 2-pyrenyl-4,4,5,5-tetramethyl imidazoline-1-oxygen base free radical.
A second aspect of the present invention, a kind of preparation method of field-effect transistor of organic semiconducting materials may further comprise the steps:
Step S1, the deposition of gate metal and patterning:
Substrate with absolute ethyl alcohol, acetone ultrasonic cleaning, deionized water ultrasonic cleaning dries up or oven for drying through nitrogen, even afterwards glue, exposure, development, evaporation at least layer of metal, peel off, obtain the gate electrode of patterning;
Step S2, the deposition of insulating barrier:
Adopt the insulating barrier thin film-forming method to deposit one deck insulating barrier at least the substrate after the gate patternization;
Step S3, the deposition of organic pyrene oxygen radical semi-conducting material:
Adopting organic substance film build method deposit thickness on insulating barrier is organic pyrene oxygen radical semiconductor layer of 50～150 nanometers;
Step S4, the deposition of source electrode and drain electrode and patterning thereof:
On organic pyrene oxygen radical semiconductor layer, after even glue, exposure, development, evaporation at least layer of metal, peel off, obtain the source electrode and the drain electrode of patterning.
The deposition of the organic pyrene oxygen radical of described step S3 semi-conducting material and the deposition and the patterning thereof of step S4 source electrode and drain electrode, the order of the step by changing step S3 and step S4 is made the field-effect transistor of upper electrode arrangement or lower electrode arrangement respectively.
Described grid, the thickness of source electrode and drain electrode is respectively 30～300 nanometers.
The length of raceway groove and widely be respectively 0.3～500 micron between its described source electrode and drain electrode.
The present invention has following characteristics and advantage:
1, the organic field effect tube of the present invention's preparation is with 2-pyrenyl-4,4,5, and 5-tetramethyl imidazoline-1-oxygen base free radical is an organic semiconducting materials.
2, the organic field effect tube of the present invention's preparation can be operated under low-voltage, and (mobility is up to 0.1cm to demonstrate good field effect behavior
2/ Vs, on-off ratio is greater than 10
4, threshold voltage is-0.6V that sub-threshold slope is 0.54V/decade).
3, the used 2-pyrenyl-4,4,5 of the present invention, 5-tetramethyl imidazoline-1-oxygen base free radical, preparation technology is simple, and is with low cost.
Organic field effect tube of the present invention can be used in active driving, low-end IC, fields such as transducer.
Description of drawings
Fig. 1 is the organic field effect tube of upper electrode arrangement of the present invention
Fig. 2 is the organic field effect tube of lower electrode arrangement of the present invention
Fig. 3 is an organic field effect tube raceway groove schematic diagram of the present invention
Fig. 4 is the organic material molecular formula of organic field effect tube of the present invention
Fig. 5 for organic field effect tube of the present invention based on 2-pyrenyl-4,4,5,5-tetramethyl imidazoline-1-oxygen base free radical deposit the curve of output of the OFETs that the back prepares on silicon dioxide substrates
Fig. 6 for organic field effect tube of the present invention based on 2-pyrenyl-4,4,5,5-tetramethyl imidazoline-1-oxygen base free radical deposit the transfer curve figure of the OFETs that the back prepares on silicon dioxide substrates
Fig. 7 for organic field effect tube OFETs of the present invention based on 2-pyrenyl-4,4,5, the curve of output of 5-tetramethyl imidazoline-1-oxygen base free radical organic field effect tube OFETs of deposition back preparation on the silicon dioxide substrates that the octadecyl trichlorosilane is modified
Fig. 8 for organic field effect tube OFETs of the present invention based on 2-pyrenyl-4,4,5, the transfer curve figure of 5-tetramethyl imidazoline-1-oxygen base free radical organic field effect tube OFETs of deposition back preparation on the silicon dioxide substrates that the octadecyl trichlorosilane is modified
Embodiment
The present invention is described in detail below in conjunction with drawings and Examples, but the present invention is not limited to this example.
The organic field effect tube that the present invention proposes, by semiconductor layer 1, insulating barrier 2, grid 3, substrate 4, organic source electrode 5 and drain electrode 6 are formed.
Organic field effect tube structure among the present invention has two kinds of situations:
(1) according to the present invention shown in the organic field effect tube of Fig. 1 upper electrode arrangement:
Upper electrode arrangement: be followed successively by substrate 4 from the bottom up, grid 3, insulating barrier 2, organic semiconductor layer 1, source electrode 5 and drain electrode 6.
(2) according to the present invention shown in the organic field effect tube of Fig. 2 lower electrode arrangement:
Lower electrode arrangement: be followed successively by substrate 4 from the bottom up, grid 3, insulating barrier 2, source electrode 5 and drain electrode 6, organic semiconductor layer 1.
Wherein organic semiconductor layer 1 material is organic pyrene oxygen radical.
Organic field effect tube of the present invention, its described insulating barrier 2 materials have excellent dielectric properties, comprise inorganic insulating material (for example silicon dioxide and silicon nitride etc.) and organic insulating material (for example polymethyl methacrylate and polyvinyl alcohol etc.), the preparation method can be the chemical vapour deposition (CVD), the thermal oxidation that strengthen of plasma, get rid of film or vacuum evaporation etc.
Organic field effect tube of the present invention, its described grid 3, source electrode 5 and drain electrode 6, be to constitute by having low-resistance material, comprise various metals and alloy material and metal oxide (as tin indium oxide) electric conducting materials such as gold, silver, aluminium, copper, also can adopt silicon as grid 3, the electric conducting material of source electrode 5 and drain electrode 6, deposition process can be the various deposition processs such as chemical vapour deposition (CVD) of vacuum thermal evaporation, magnetron sputtering, plasma enhancing.
Described organic pyrene oxygen radical semiconductor layer 1 adopts 2-pyrenyl-4,4,5, and 5-tetramethyl imidazoline-1-oxygen base free radical is synthetic as follows:
With 3-first class-2,3-dihydroxy amido butane is dissolved in the absolute methanol, adds 1-aldehyde radical pyrene, reflux, and aldehyde is insoluble, adds benzene and formic acid triethyl again, makes its dissolving, refluxes 12 hours, and solution is spin-dried for, the dry yellow powder that gets; Behind dissolve with methanol, add lead oxide, stirred 3 hours under the room temperature, filter repeatedly, organic facies is spin-dried for, successively with carrene, ethyl acetate is that eluant, eluent carries out column chromatography, collects blue zone, is spin-dried for, carrene/benzinum recrystallization obtains the purple crystallite; The purple crystallite is dissolved in the carrene, add NaNO2 and glacial acetic acid, 40 ℃ of following stirring and refluxing after 50 minutes, color has the blue brownish red that becomes, and near transparent, adds the NaHCO3 saturated solution, continue to stir 2 minutes, separatory, organic facies wash with water three times, anhydrous MgSO4 drying, filter, be spin-dried for orange red powder, sample is dissolved in carrene, is that eluant, eluent carries out the post layer and separates with the ethyl acetate/dichloromethane, collect red zone, be spin-dried for, be used for carrene/n-hexane, the red crystals of recrystallization.
The preparation method of described organic field effect tube, its described grid 3, the thickness of source electrode 5 and drain electrode 6 is respectively 30 nanometers～300 nanometers, and their thickness can be selected in 30 nanometers～300 nanometer range as required.
The preparation method of described organic field effect tube, Fig. 3 organic field effect tube raceway groove schematic diagram according to the present invention, the length of its described source electrode 5 and 6 raceway grooves of drain electrode is respectively 0.3 micron～500 microns, and their thickness can be selected at 0.3 micron～500 micrometer ranges as required.
The preparation method of described organic field effect tube, its described organic substance film build method, for vacuum evaporation, get rid of film, drip film, printing; When organic substance is polymer, adopts and get rid of film, drip film, printing; Vacuum evaporation during for micromolecule, get rid of film, drip film, printing.
Embodiment 1:
Fig. 4 is the molecular formula of organic semiconductor layer 1 material of field-effect transistor of the present invention;
Field-effect transistor upper electrode arrangement of the present invention comprises substrate 4, grid 3, insulating barrier 2, organic semiconductive layer 1, source electrode 5 and drain electrode 6 successively.
Insulating barrier 2 can be inorganic insulation layer and organic insulator, comprises silicon dioxide, silicon nitride, polyvinyl alcohol, organic molecule decorative layer etc.
Wherein substrate 4 can be made by following material: one of them makes glass, pottery, polymer, silicon substrate.
The organic semiconductor layer 1 that uses among the present invention adopts 2-pyrenyl-4,4,5, and 5-tetramethyl imidazoline-1-oxygen base free radical is by the abovementioned steps preparation.With 2-pyrenyl-4,4,5,5-tetramethyl imidazoline-1-oxygen base free radical adopts the method for vacuum evaporation to deposit to preparation organic field effect tube in deposition back on the silicon substrate of heat growth layer of silicon dioxide (450nm), and its preparation method carries out according to following steps: _
The first step will be cleaned with washing agent, running water, deionized water, acetone, absolute ethyl alcohol as the silicon chip of substrate 4 and grid 3, places baking oven to dry then.
In second step, thermal oxide growth layer of silicon dioxide on silicon substrate 4 (about 450 nanometers) is as insulating barrier 2.
In the 3rd step, the substrate 4 of the silicon dioxide of having grown is placed in the vacuum chamber, 4 * 10
-4Under the vacuum condition of Pa, adopt the method for vacuum evaporation, with organic semiconducting materials 2-pyrenyl-4,4,5,5-tetramethyl imidazoline-1-oxygen base free radical with
Speed at the surface deposition 50nm of silicon dioxide substrates, form organic pyrene oxygen base free radical semiconductor layer 1.
The 4th step, shown in Fig. 3 organic field effect tube raceway groove of the present invention schematic diagram:
Mode by mask is forming source electrode 5 and drain electrode 6 with golden evaporation under the high vacuum to organic semiconductor.Limiting 6 raceway grooves of described source electrode 5 and drain electrode long 8 is 50 microns, and raceway groove wide 7 is 3000 microns.
The 5th step will obtain organic field effect tube at room temperature, utilize HP4140B semi-conductor test instrument and MP1008 probe station under the atmospheric environment, be the scope interscan of 0-80V at source-drain voltage, thereby draw the output performance of device.Based on 2-pyrenyl-4,4,5, the mobility of the organic field effect tube of 5-tetramethyl imidazoline-1-oxygen base free radical, on-off ratio and threshold voltage are respectively and are 0.1cm
2V
-1s
-1, 5 * 10
4With-0.6V.
Referring to Fig. 5 for organic field effect tube of the present invention based on 2-pyrenyl-4,4,5,5-tetramethyl imidazoline-1-oxygen base free radical deposit the curve of output that the back prepares organic field effect tube on silicon dioxide substrates
Fig. 6 for organic field effect tube of the present invention based on 2-pyrenyl-4,4,5,5-tetramethyl imidazoline-1-oxygen base free radical deposit on silicon dioxide substrates that the back makes has field effect transistors transfer curve figure
Embodiment 2:
Among the present invention with 2-pyrenyl-4,4,5,5-tetramethyl imidazoline-1-oxygen base free radical is an organic semiconducting materials preparation organic field effect tube in deposition back on the silicon substrate 4 of heat growth layer of silicon dioxide (450nm) again, its preparation method is according to embodiment 1, unique different be at deposition 2-pyrenyl-4,4,5, before 5-tetramethyl imidazoline-1-oxygen base free radical, under vacuum, adopt vapor phase method silica surface to be modified the silicon substrate 4 of heat growth silicon dioxide with the octadecyl trichlorosilane.Based on 2-pyrenyl-4,4,5, the mobility of 5-tetramethyl imidazoline-1-oxygen base free radical, on-off ratio and threshold voltage are respectively 1.0 * 10
-3Cm
2V
-1s
-1, 10
3And 0V.
Present embodiment such as Fig. 7 for organic field effect tube of the present invention based on 2-pyrenyl-4,4,5, the curve of output of 5-tetramethyl imidazoline-1-oxygen base free radical organic field effect tube of deposition back preparation on the silicon dioxide substrates that the octadecyl trichlorosilane is modified
Present embodiment such as Fig. 8 are that organic field effect tube of the present invention is based on 2-pyrenyl-4,4,5, the transfer curve figure of 5-tetramethyl imidazoline-1-oxygen base free radical organic field effect tube of deposition back preparation on the silicon dioxide substrates that the octadecyl trichlorosilane is modified.
Claims (6)
1, a kind of field-effect transistor of organic semiconducting materials is characterized in that, comprising:
Substrate, intercalation electrode lead-in wire on substrate;
Grid, this grid be positioned at substrate on, and with the contact conductor conducting;
Insulating barrier, this insulating barrier be positioned at grid on;
Organic pyrene oxygen radical semiconductor layer, this organic pyrene oxygen radical semiconductor layer is positioned on the insulating barrier;
Source electrode and drain electrode, this source electrode and drain electrode are positioned on organic pyrene oxygen radical semiconductor layer;
Wherein organic pyrene oxygen radical semiconductor layer is a 2-pyrenyl-4,4,5,5-tetramethyl imidazoline-1-oxygen base free radical.
2, a kind of field-effect transistor of organic semiconducting materials is characterized in that, comprising:
Substrate, intercalation electrode lead-in wire on substrate;
Grid, this grid is positioned on the substrate, and with the contact conductor conducting;
Insulating barrier, this insulating barrier is positioned on the grid;
Source electrode and drain electrode, this source electrode and drain electrode are positioned on the insulating barrier;
Organic pyrene oxygen radical semiconductor layer, this organic pyrene oxygen radical semiconductor layer is positioned on source electrode and the drain electrode;
Wherein organic pyrene oxygen radical semiconductor layer is a 2-pyrenyl-4,4,5,5-tetramethyl imidazoline-1-oxygen base free radical.
3, a kind of preparation method of field-effect transistor of organic semiconducting materials is characterized in that: may further comprise the steps:
Step S1, the deposition of gate metal and patterning:
Substrate with absolute ethyl alcohol, acetone ultrasonic cleaning, deionized water ultrasonic cleaning dries up or oven for drying through nitrogen, even afterwards glue, exposure, development, evaporation at least layer of metal, peel off, obtain the gate electrode of patterning;
Step S2, the deposition of insulating barrier:
Adopt the insulating barrier thin film-forming method to deposit one deck insulating barrier at least the substrate after the gate patternization;
Step S3, the deposition of organic pyrene oxygen radical semi-conducting material:
Adopting organic substance film build method deposit thickness on insulating barrier is organic pyrene oxygen radical semiconductor layer of 50～150 nanometers, and wherein organic pyrene oxygen radical semiconductor layer is a 2-pyrenyl-4,4,5,5-tetramethyl imidazoline-1-oxygen base free radical;
Step S4, the deposition of source electrode and drain electrode and patterning thereof:
On organic pyrene oxygen radical semiconductor layer, after even glue, exposure, development, evaporation at least layer of metal, peel off, obtain the source electrode and the drain electrode of patterning.
4, according to the preparation method of the field-effect transistor of the described organic semiconducting materials of claim 3, it is characterized in that: described grid, the thickness range of source electrode and drain electrode are 30～300 nanometers.
5, according to the preparation method of the field-effect transistor of the described organic semiconducting materials of claim 3, it is characterized in that: the length of raceway groove and wide number range are 0.3～500 micron between its described source electrode and drain electrode.
6, a kind of preparation method of field-effect transistor of organic semiconducting materials is characterized in that: may further comprise the steps:
Step S1, the deposition of gate metal and patterning:
Substrate with absolute ethyl alcohol, acetone ultrasonic cleaning, deionized water ultrasonic cleaning dries up or oven for drying through nitrogen, even afterwards glue, exposure, development, evaporation at least layer of metal, peel off, obtain the gate electrode of patterning;
Step S2, the deposition of insulating barrier:
Adopt the insulating barrier thin film-forming method to deposit one deck insulating barrier at least the substrate after the gate patternization;
Step S3, the deposition of source electrode and drain electrode and patterning thereof:
On insulating barrier, after even glue, exposure, development, evaporation at least layer of metal, peel off, obtain the source electrode and the drain electrode of patterning;
Step S4, the deposition of organic pyrene oxygen radical semi-conducting material:
Adopting organic substance film build method deposit thickness on the source of patterning electrode and drain electrode is organic pyrene oxygen radical semiconductor layer of 50～150 nanometers, wherein organic pyrene oxygen radical semiconductor layer is a 2-pyrenyl-4,4,5,5-tetramethyl imidazoline-1-oxygen base free radical.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100893435A CN100544052C (en) | 2006-06-21 | 2006-06-21 | A kind of field-effect transistor of organic semiconducting materials and preparation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100893435A CN100544052C (en) | 2006-06-21 | 2006-06-21 | A kind of field-effect transistor of organic semiconducting materials and preparation method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101093875A CN101093875A (en) | 2007-12-26 |
| CN100544052C true CN100544052C (en) | 2009-09-23 |
Family
ID=38991985
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2006100893435A Expired - Fee Related CN100544052C (en) | 2006-06-21 | 2006-06-21 | A kind of field-effect transistor of organic semiconducting materials and preparation method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100544052C (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100593871C (en) * | 2008-08-12 | 2010-03-10 | 中国科学院化学研究所 | Organic field-effect transistors having high mobility and preparation thereof |
| CN102903850B (en) * | 2012-10-23 | 2015-04-29 | 中国科学院化学研究所 | Manufacturing method of organic field effect transistor |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004137240A (en) * | 2002-10-21 | 2004-05-13 | Matsushita Electric Ind Co Ltd | Aromatic methylidene compound, compound for producing the same, method for production of the compounds, and organic electroluminescent element |
| JP2004241528A (en) * | 2003-02-05 | 2004-08-26 | Ricoh Co Ltd | Organic semiconductor device and display element having it |
| JP2005209802A (en) * | 2004-01-21 | 2005-08-04 | Keio Gijuku | Molecular magnetic material using hydrogen bonding and its manufacturing method |
| US20060054884A1 (en) * | 2004-03-31 | 2006-03-16 | Hiroki Maeda | Organic semiconductor material, organic semiconductor structure, and organic semiconductor device |
| US20060113527A1 (en) * | 2004-11-29 | 2006-06-01 | Samsung Electronics Co., Ltd. | Star-shaped oligothiophene-arylene derivatives and organic thin film transistors using the same |
-
2006
- 2006-06-21 CN CNB2006100893435A patent/CN100544052C/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004137240A (en) * | 2002-10-21 | 2004-05-13 | Matsushita Electric Ind Co Ltd | Aromatic methylidene compound, compound for producing the same, method for production of the compounds, and organic electroluminescent element |
| JP2004241528A (en) * | 2003-02-05 | 2004-08-26 | Ricoh Co Ltd | Organic semiconductor device and display element having it |
| JP2005209802A (en) * | 2004-01-21 | 2005-08-04 | Keio Gijuku | Molecular magnetic material using hydrogen bonding and its manufacturing method |
| US20060054884A1 (en) * | 2004-03-31 | 2006-03-16 | Hiroki Maeda | Organic semiconductor material, organic semiconductor structure, and organic semiconductor device |
| US20060113527A1 (en) * | 2004-11-29 | 2006-06-01 | Samsung Electronics Co., Ltd. | Star-shaped oligothiophene-arylene derivatives and organic thin film transistors using the same |
Non-Patent Citations (1)
| Title |
|---|
| Metal-Organic Thin-Film transistor(MOTFT) Based on aBis(o-diiminobenzodemiquinonate)Nickel(II) Complex. Shin-ichiro Noro etc.J.Am.Chem.Soc,Vol.127 . 2005 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101093875A (en) | 2007-12-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Lakshminarayana et al. | Modification of acenes for n-channel OFET materials | |
| CN101404322B (en) | Field effect transistor device with graphene as electrode and method for producing the same | |
| TW200537693A (en) | Organic thin film transistor | |
| CN101101967A (en) | Low-cost and high-performance organic field effect transistor and its making method | |
| Ling et al. | Copper hexafluorophthalocyanine field-effect transistors with enhanced mobility by soft contact lamination | |
| Moggia et al. | Synthesis and thin film electronic properties of two pyrene-substituted oligothiophene derivatives | |
| CN100544052C (en) | A kind of field-effect transistor of organic semiconducting materials and preparation method | |
| Burch et al. | Electrical properties of polyunsaturated natural products: field effect mobility of carotenoid polyenes | |
| JP4429584B2 (en) | Vertical field effect transistor | |
| TWI243497B (en) | Reduction of the contact resistance in organic filed-effect transistors with palladium contacts by using phosphines and metal-containing phosphines | |
| CN102856494A (en) | Organic bipolar field effect transistor and preparation method thereof | |
| CN109270131A (en) | A kind of OTFT ammonia gas sensor and preparation method thereof embedded with micromolecule additive | |
| Nakayama et al. | Improvement in the on/off ratio of a vertical-type metal-base organic transistor by heat treatment in air | |
| CN102194998B (en) | Organic semiconductor element and organic electrode | |
| JP5031584B2 (en) | Organic thin film transistor | |
| KR100794570B1 (en) | Vertical type organic thin film field effect transistor | |
| TWI450429B (en) | Organic thin film transistor and method for preparing thereof | |
| CN102738394A (en) | Method for preparing silver electrode and application of method | |
| WO2014047647A1 (en) | Organic thin film transistors and methods of making the same | |
| CN107146805A (en) | Array base palte and display device | |
| TWI433367B (en) | N-type organic thin film transistor, ambipolar field-effect transistor, and method of fabricating the same | |
| CN101097991B (en) | Dual-operation mode organic field effect transistors and manufacturing method thereof | |
| JP2006041103A (en) | Organic transistor | |
| CN100466323C (en) | A non plane channel organic field effect transistor | |
| CN101335332A (en) | Organic field-effect transistors and preparation thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090923 Termination date: 20140621 |
|
| EXPY | Termination of patent right or utility model |