CN101335332A - Organic field-effect transistors and preparation thereof - Google Patents
Organic field-effect transistors and preparation thereof Download PDFInfo
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- CN101335332A CN101335332A CNA2007101181536A CN200710118153A CN101335332A CN 101335332 A CN101335332 A CN 101335332A CN A2007101181536 A CNA2007101181536 A CN A2007101181536A CN 200710118153 A CN200710118153 A CN 200710118153A CN 101335332 A CN101335332 A CN 101335332A
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Abstract
The invention discloses an organic field-effect transistor and a preparation method thereof. The organic field-effect transistor provided by the invention comprises a substrate, a grid electrode provided on the substrate, an insulating layer, an organic semiconductor layer, a source electrode and a drain electrode, wherein, the organic field-effect transistor has a top electrode structure, and both of the source electrode and the drain electrode are copper. The organic field-effect transistor and the method utilize copper with low work function and low cost as the source and drain electrode of the transistor, obtain the organic field-effect transistor with the top electrode structure of excellent performance, reduce the cost of the organic field-effect transistor to a large degree, and have simple process and low cost; the organic field-effect transistor with the top electrode structure has high performance equal to the source and drain electrode of gold; simultaneously, due to the extensive use of copper in inorganic technology, the organic field-effect transistor has better inorganic technology compatibility and can be applied more widely.
Description
Technical field
The present invention relates to a kind of organic field effect tube and preparation method thereof, high-performance and low-cost organic field effect tube that particularly a kind of copper is source-drain electrode and preparation method thereof.
Background technology
Organic field effect tube (organic field effect transistors (OFETs)) is by regulating a kind of active device that grid voltage comes size of current between the Controlling Source drain electrode, whole transistor is by the gate electrode on the substrate 12, insulating barrier 3, organic semiconductor layer 4, source electrode 5 and drain electrode 6 constitute, its structure can be divided into by source-drain electrode position difference: upper electrode arrangement and lower electrode arrangement, its structural representation is respectively shown in Figure 1A and Figure 1B, in upper electrode arrangement, source electrode 5 and drain electrode 6 are located on the organic semiconductor layer 4, are not connected (Figure 1A) with insulating barrier 3; And in lower electrode arrangement, source electrode 5 all is connected (Figure 1B) with organic semiconductor layer 4 with insulating barrier 3 with drain electrode 6.Organic semiconductor layer is because softer, so its structure and inorganic FET are different, organic field effect tube adopts the inversion type structure, promptly constructs entire device on transistorized grid.When after applying voltage on the grid, can form the conducting channel of a wedge shape between organic semiconductor and the interfacial dielectric layer, along with the increase of voltage, conducting channel is just close to source, drain electrode gradually, at this moment conducting has with it at last just formed electric current, and transistor also just is in out the state of (on).When grid voltage was zero, the electric current between source, the drain electrode was very little, and transistor is in the state of pass (off).And two key indexs of decision OFET performance are: mobility of charge carrier rate (μ) and on-off ratio (I
On/ I
Off).Mobility is meant: under unit electric field, and the distance that charge carrier drifted about in the unit interval.On-off ratio is meant: under certain grid voltage, and the ratio of electric current under the state that transistor is in out and the state of pass.These two qualities that determine field-effect transistor performance.
(Tsumura, A. since the invention eighties in last century organic field effect tube; Koezuka, H.; Ando, T.Appl.Phys.Lett.1986,49,1210), organic field effect tube is because its potential using value at aspects such as Active Matrix LCD At, organic integration circuit, electronic trademark has obtained people's extensive concern.Compare with inorganic device, organic electro-optic device has low cost, in light weight, unique advantage such as pliability is good.In recent years, along with the research extensively and profoundly of people's research, organic field effect tube has all been obtained significant progress in material design, device preparation and structure, the new all many-sides such as exploration and practicability technology of using.The organic field effect tube mobility of multiple organic material surpasses 0.1cm
2V
-1s
-1(1:Nelson, S.F.; Lin, Y.Y.; Gundlach, D.J.; Jackson, T.N.Appl.Phys.Lett.1998,72,1854.2:Meng, H.; Sun, F.; Goldfinger, M.B.; Gao, F.; Londono, D.J.; Marshal, W.J.; Blackman, G.S.; Dobbs, K.D.; Keys, D.E.J.Am.Soc.Chem.2006,128,9304.3:Ong, B.S., Wu, Y.L., Liu, P., Gardner, S.Adv.Mater.2005,17,1141.), can compare favourably with amorphous silicon.
However, organic field effect tube far can not practicability, and this is because the stability and the cost of device still can not satisfy application need.Gold electrode is the most widely used source-drain electrode, and this is because gold utensil has excellent stability, conductivity and higher work content.For P type organic semiconductor, high work content can guarantee electrode and organic semi-conductor energy level coupling, thereby possesses high charge carrier injection efficiency.But price of gold lattice costliness is unfavorable for that the cost of organic field effect tube reduces.Excellent organic field effect tube electrode need meet the following conditions: advantages of higher stability, excellent electric conductivity and the energy level that is complementary with semiconductor.The organic conductive polymer can be used as electrode, but its relatively poor conductivity and relatively poor stability limit its application.
Summary of the invention
The objective of the invention is to have high-new energy, organic field effect tube and preparation method thereof cheaply.
Organic field effect tube provided by the present invention comprises substrate and is located at gate electrode, insulating barrier, organic semiconductor layer, source electrode and drain electrode on the substrate that wherein, organic field effect tube is a upper electrode arrangement, and source electrode and drain electrode are copper.
Wherein, the thickness of copper is 10～300 nanometers.Substrate is selected from glass, pottery, polymer or silicon chip; Gate electrode constitutes by having low-resistance material, comprises metal, alloy material and metal conductive oxide material, and metal comprises gold, silver, aluminium, copper, and the metal conductive oxide material comprises tin indium oxide; Insulating barrier comprises silicon dioxide, silicon nitride and organic insulating material; Organic semiconductor layer is the organic material with field effect behavior, comprises organic small molecule material, macromolecule polymer material or their mixtures, as: pentacene, aphthacene, CuPc and ranadylic phthalocyanine etc.
The preparation method of this organic field effect tube, sequential aggradation gate electrode, insulating barrier and organic semiconductor layer on substrate then, adopt the method plated metal copper layer of vacuum thermal evaporation on organic semiconductor layer earlier, as source electrode and drain electrode, obtain described organic field effect tube.
The present invention is with low work content, copper is transistorized source-drain electrode cheaply, obtains having the organic field effect tube of the upper electrode arrangement of superperformance, reduced the cost of organic field effect tube to a great extent, and technology is simple, and is with low cost; The organic field effect tube of upper electrode arrangement of the present invention has and gold is the suitable high-performance of transistor of source-drain electrode, simultaneously, because copper in the inorganic process extensive use, makes organic field effect tube of the present invention have better inorganic process compatibility, range of application is more extensive.
Description of drawings
Figure 1A and Figure 1B are respectively the structural representation of the field-effect transistor of upper electrode arrangement and lower electrode arrangement;
Fig. 2 is the molecular formula of several organic semiconducting materials;
Fig. 3 A is that copper is the curve of output of field-effect transistor (pentacene is an organic semiconducting materials) under different grid voltages of the upper electrode arrangement of source-drain electrode material;
Fig. 3 B is that gold, silver, copper are the transfer curve of the field-effect transistor (pentacene is an organic semiconducting materials) of the upper electrode arrangement of source-drain electrode material;
Fig. 4 A is for being organic semiconductor with CuPc, and copper is that the organic field effect tube performance of the upper electrode arrangement of source-drain electrode is schemed over time;
Fig. 4 B is for being organic semiconductor with VOPc, and copper is that the organic field effect tube performance of the upper electrode arrangement of source-drain electrode is schemed over time.
Embodiment
Shown in Figure 1A, organic field effect tube of the present invention is a upper electrode arrangement, comprises substrate 1, and is located at gate electrode 2, insulating barrier 3, organic semiconductor layer 4, source electrode 5 and drain electrode 6 on the substrate 1, and its source-drain electrode is a copper electrode.Wherein, substrate 1 can be made by following material: one of them makes glass, pottery, polymer, silicon chip; Gate electrode 2 is to constitute by having low-resistance material, comprises various metals and alloy material and metal oxide (as tin indium oxide) electric conducting material formations such as gold, silver, aluminium, copper; Insulating barrier 3 can be inorganic insulation layer and organic insulator, comprises silicon dioxide, silicon nitride, polyvinyl alcohol etc.Source-drain electrode is a copper electrode; Organic semiconductor layer 4 is made by the organic material with field effect behavior, comprise organic small molecule material, macromolecule polymer material or their mixtures, as pentacene (pentacene), aphthacene (tetracene), CuPc (CuPc) and ranadylic phthalocyanine (VOPc) etc. (structural formula respectively as shown in Figure 2), this organic semiconductor layer 4 can be individual layer or bilayer.
In organic field effect tube of the present invention, the thickness and the size of various parts do not have specific (special) requirements, can make according to the thickness of at present general organic field effect tube and size to get final product.
This organic field effect tube elder generation is sequential aggradation gate electrode, insulating barrier and organic semiconductor layer on substrate according to a conventional method, makes the copper source-drain electrode again, can obtain.These methods all can be carried out according to existing various common methods: as the deposition gate electrode, can adopt the chemical vapour deposition (CVD) of vacuum thermal evaporation, magnetron sputtering, plasma enhancing etc.; Depositing insulating layer can be the chemical vapour deposition (CVD), the thermal oxidation that strengthen of plasma, get rid of methods such as film or vacuum evaporation; Deposition organic semiconductor layer, thin film-forming method can be vacuum evaporation, get rid of film, drip film, printing etc.; The deposited copper source-drain electrode can adopt methods such as vacuum thermal evaporation.
Concrete, may further comprise the steps:
The first step, the deposition of organic semiconductor layer:
With the substrate that deposits gate electrode and insulating barrier with deionized water, ethanol, acetone ultrasonic cleaning after oven for drying, modify through octadecyl chlorosilane (OTS) then, use normal heptane, ethanol, acetone ultrasonic cleaning afterwards, adopt the organic substance film build method to obtain the organic semiconductor layer that thickness is 5～150 nanometers then;
Second step, the deposition of source-drain electrode:
To prepare on the transistor of organic semiconductor layer, under the mask effect of mask, adopt vacuum deposition method to obtain the copper source-drain electrode.
Below with specific embodiment the preparation and the performance test of organic field effect tube of the present invention are described, but the present invention is not limited thereto.
The first step, the cleaning of insulating barrier and modifying interface
The substrate that will deposit gate electrode (highly doped silicon) and insulating barrier (silicon dioxide layer) is through deionized water, ethanol, each ultrasonic cleaning of acetone oven for drying after ten minutes, substrate after cleaning is placed a culture dish that octadecyl chlorosilane (OTS) arranged, normal heptane, ethanol, acetone ultrasonic cleaning are used in baking 3 hours under the vacuum degree of 1Pa and 393K afterwards then.
Second step, the deposition of organic semiconducting materials:
To clean and modify substrate and place in the vacuum coating equipment, be 4 * 10 in vacuum degree
-4Under the condition of Pa with 1
The speed evaporation pentacene of/s, thickness is 50 nanometers.
The 3rd step, the deposition of source-drain electrode and device detection:
The organic field effect tube that has deposited the pentacene semiconductor layer is placed in the vacuum coating equipment, is 8 * 10 in vacuum degree
-4Under the condition of Pa with 1.2
The speed copper steam-plating electrode of/s, thickness is 30 nanometers, obtains field-effect transistor.
Utilizing the HP4140B semi-conductor test instrument under the room temperature device performance to be tested under atmospheric environment, is 0.18cm based on the transistor mobility of this structure
2V
-1s
-1, on-off ratio is 10
6, suitable as the device performance of electrode with gold under this performance and the same terms, the curve of output of this transistor under different grid voltages as shown in Figure 3A.
According to the process of pressing embodiment 1, as organic semiconductor, be 0.041cm based on the field-effect transistor mobility of aphthacene with aphthacene
2V
-1s
-1, on-off ratio is 10
6
Adopting and use the same method, is the source-drain electrode material with gold, silver, copper, and silicon dioxide is insulating barrier, highly doped silicon is as gate electrode, with pentacene, aphthacene is organic semiconducting materials, prepares the organic field effect tube of upper electrode arrangement and lower electrode arrangement, its performance parameter such as table 1; Gold, silver, copper are that the transfer curve of field-effect transistor (pentacene is an organic semiconducting materials) of the upper electrode arrangement of source-drain electrode material is shown in Fig. 3 B.
Table 1 is pentacene, the aphthacene organic field effect tube performance parameter of insulating barrier with silicon dioxide
From the result of table 1 and Fig. 3 B as can be seen, device for upper electrode arrangement, with copper is source-drain electrode, be the pentacene and the aphthacene fieldtron performance and suitable with the gold electrode device performance for preparing under the condition of insulating barrier with silicon dioxide, but the copper electrode device possesses lower cost.
The first step, the preparation of insulating barrier
The Conducting Glass that will deposit tin indium oxide (ITO) is through deionized water, ethanol, each ultrasonic cleaning of acetone oven for drying after ten minutes, with the polyvinylphenol organic insulator of spin coating 600 nanometers, the substrate that will scribble organic insulator again places the baking 10 minutes down of baking oven 100 degree, 200 degree bakings 1 hour, 60 degree annealing 10 hours afterwards.
Second step and the 3rd step carried out according to step of second among the embodiment 1 and the 3rd step, obtained field-effect transistor.
Utilizing the HP4140B semi-conductor test instrument under the room temperature device performance to be tested under atmospheric environment, is 0.15cm based on the transistor mobility of this structure
2V
-1s
-1, on-off ratio is 10
5
Embodiment 4:
Pressing the process of embodiment 3, as organic semiconductor, is 0.052cm based on the field-effect transistor mobility of aphthacene with aphthacene
2V
-1s
-1, on-off ratio is 10
6
Adopting and use the same method, is the source-drain electrode material with gold, silver, copper, and polyvinylphenol is an insulating barrier, tin indium oxide (ITO) is as gate electrode, with pentacene, aphthacene is organic semiconducting materials, prepares the organic field effect tube of upper electrode arrangement, its performance parameter such as table 2.
Table 2 is the pentacene of insulating barrier, the organic field effect tube performance parameter of aphthacene with the organic polymer
From the result of table 2 as can be seen, be source-drain electrode with copper, with the polyvinylphenol be the pentacene of organic insulator and aphthacene fieldtron performance with suitable with the gold electrode device performance for preparing under the condition, but the copper electrode device possesses lower cost.
Embodiment 5:
Press the preparation method of embodiment 1, (CuPc) prepares organic field effect tube as organic semiconductor with CuPc.
Test to device is carried out device is deposited 30 hours in air after, is 0.012cm based on the field-effect mobility of CuPc
2V
-1s
-1, on-off ratio is 10
5
Fig. 4 A is for being organic semiconductor with CuPc, and copper is that the organic field effect tube performance of the upper electrode arrangement of source-drain electrode is schemed over time.
Embodiment 6:
Press the preparation method of embodiment 1, (VOPc) prepares organic field effect tube as organic semiconductor with ranadylic phthalocyanine.
Test to device is carried out device is deposited 30 hours in air after, is 0.01cm based on the field-effect mobility of VOPc
2V
-1s
-1, on-off ratio is 10
5
Fig. 4 B is for being organic semiconductor with VOPc, and copper is that the organic field effect tube performance of the upper electrode arrangement of source-drain electrode is schemed over time.
Claims (10)
1, a kind of organic field effect tube, comprise substrate, gate electrode, insulating barrier, organic semiconductor layer, source electrode and drain electrode with being located on the substrate is characterized in that: described organic field effect tube is a upper electrode arrangement, and described source electrode and drain electrode are copper.
2, organic field effect tube according to claim 1 is characterized in that: the thickness of described copper is 10～300 nanometers.
3, organic field effect tube according to claim 1 and 2 is characterized in that: described substrate is selected from glass, pottery, polymer or silicon chip.
4, organic field effect tube according to claim 1 and 2 is characterized in that: described gate electrode constitutes by having low-resistance material, comprises metal, alloy material and metal conductive oxide material.
5, organic field effect tube according to claim 4 is characterized in that: described metal comprises gold, silver, aluminium, copper; Described metal conductive oxide material comprises tin indium oxide.
6, organic field effect tube according to claim 1 and 2 is characterized in that: described insulating barrier comprises silicon dioxide, silicon nitride and organic insulating material.
7, organic field effect tube according to claim 1 and 2 is characterized in that: organic semiconductor layer is the organic material with field effect behavior, comprises organic small molecule material, macromolecule polymer material or their mixtures and multilayer material.
8, organic field effect tube according to claim 7 is characterized in that: described organic semiconductor layer is pentacene, aphthacene, CuPc or ranadylic phthalocyanine.
9, the preparation method of the described organic field effect tube of claim 1, elder generation sequential aggradation gate electrode, insulating barrier and organic semiconductor layer on substrate, then, on organic semiconductor layer, adopt the method plated metal copper layer of vacuum thermal evaporation, as source electrode and drain electrode, obtain described organic field effect tube.
10, preparation method according to claim 9 is characterized in that: the thickness of described metal copper layer is 10～300 nanometers.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102723437A (en) * | 2011-03-29 | 2012-10-10 | 中国科学院微电子研究所 | Optical memory cell, optical memory and preparation method thereof |
| CN105977380A (en) * | 2016-06-17 | 2016-09-28 | 国家纳米科学中心 | Organic field effect transistor and preparation method thereof and electronic circuit |
| CN107437585A (en) * | 2017-08-10 | 2017-12-05 | 上海幂方电子科技有限公司 | It is a kind of to print the method for preparing flexible organic field effect tube entirely |
-
2007
- 2007-06-29 CN CNA2007101181536A patent/CN101335332A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102723437A (en) * | 2011-03-29 | 2012-10-10 | 中国科学院微电子研究所 | Optical memory cell, optical memory and preparation method thereof |
| CN105977380A (en) * | 2016-06-17 | 2016-09-28 | 国家纳米科学中心 | Organic field effect transistor and preparation method thereof and electronic circuit |
| CN107437585A (en) * | 2017-08-10 | 2017-12-05 | 上海幂方电子科技有限公司 | It is a kind of to print the method for preparing flexible organic field effect tube entirely |
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Open date: 20081231 |