CN115172191B - Mass transfer method of micro device and display panel - Google Patents

Mass transfer method of micro device and display panel Download PDF

Info

Publication number
CN115172191B
CN115172191B CN202211068559.9A CN202211068559A CN115172191B CN 115172191 B CN115172191 B CN 115172191B CN 202211068559 A CN202211068559 A CN 202211068559A CN 115172191 B CN115172191 B CN 115172191B
Authority
CN
China
Prior art keywords
micro device
bonding
pad
micro
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202211068559.9A
Other languages
Chinese (zh)
Other versions
CN115172191A (en
Inventor
杨志军
李国鑫
彭皓
苏丽云
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Foshan Huadao Chaojing Technology Co ltd
Original Assignee
Foshan Huadao Chaojing Technology Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Foshan Huadao Chaojing Technology Co ltd filed Critical Foshan Huadao Chaojing Technology Co ltd
Priority to CN202211068559.9A priority Critical patent/CN115172191B/en
Publication of CN115172191A publication Critical patent/CN115172191A/en
Application granted granted Critical
Publication of CN115172191B publication Critical patent/CN115172191B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67144—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/812—Applying energy for connecting
    • H01L2224/8121—Applying energy for connecting using a reflow oven
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/812—Applying energy for connecting
    • H01L2224/8122—Applying energy for connecting with energy being in the form of electromagnetic radiation
    • H01L2224/81224—Applying energy for connecting with energy being in the form of electromagnetic radiation using a laser

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

The invention discloses a mass transfer method of a micro device and a display panel, wherein the mass transfer method of the micro device comprises the following steps: providing a substrate, wherein a plurality of pad assemblies which are arranged at intervals are formed on the surface of the substrate, and each pad assembly comprises a first pad and a second pad; forming a bonding adhesive layer on the surface of the substrate, wherein the bonding adhesive layer is positioned between the first bonding pad and the second bonding pad; the micro device is in contact connection with the welding pad assembly, and the micro device is bonded with the bonding glue layer to form temporary bonding so as to ensure that the micro device cannot be displaced; performing electrical test on the micro device to determine a defective micro device and a target area where the defective micro device is located; removing the defective-point micro device and the bonding glue layer positioned in the target area; forming a repairing bonding glue layer in the target area; the repairing micro device is bonded with the repairing bonding glue layer, so that the micro device with the dead point can be simply repaired, and the trouble of repairing after reflow soldering is avoided.

Description

Mass transfer method of micro device and display panel
Technical Field
The invention relates to the technical field of semiconductors, in particular to a mass transfer method of a micro device and a display panel.
Background
As a new generation Display technology, micro Light Emitting Diode (Mini/Micro LED) displays have higher brightness, better Light Emitting efficiency, better color reproducibility, low power consumption and long lifetime, compared to Liquid Crystal Displays (LCDs) and Organic Light Emitting Diode (OLED) displays.
Along with the technical difficulty brought by the reduction of the size of the Mini/Micro LED, the traditional vacuum adsorption transfer mode is no longer suitable for the small-size Mini/Micro LED chip. The conventional bulk transfer of the Mini LED mainly adopts a solder paste screen printing method, then a chip is transferred onto a bonding pad in a crystal fixing or crystal pricking mode, and the chip and the bonding pad are solidified and combined through reflow soldering. And finally, electrifying and checking whether a dead pixel exists or not. And if the defective points appear, releasing welding, removing the chip, cleaning the bonding pad, then repairing and welding the solder paste, repairing and pasting the chip, and heating and reflowing. And after reflow soldering, bad spots are detected and repaired, the maintenance process is complicated, the repair quantity is large, and when the chip is transferred onto the bonding pad, the chip is easy to shift, so that the bad spots appear. In addition, the number of direct display panel chips is huge, and the difficulty is that the transfer of the solder paste is completed within the validity period of the solder paste, and the partition brushing of the solder paste is difficult.
Disclosure of Invention
In view of the above-mentioned deficiencies of the prior art, the present application is directed to a mass transfer method for micro devices and a display panel, which aims to solve the problems of the prior art, such as easy displacement of chips transferred onto pads, difficulty in repairing bad points, and aging of bonding.
In order to solve the above technical problem, a first aspect of the present application provides a mass transfer method for micro devices, including:
providing a substrate, wherein a plurality of pad assemblies which are arranged at intervals are formed on the surface of the substrate, and each pad assembly comprises a first pad and a second pad;
forming a bonding adhesive layer on the surface of the substrate, wherein the bonding adhesive layer is positioned between the first bonding pad and the second bonding pad;
contacting and connecting the micro device with the bonding pad assembly, wherein the micro device is bonded with the bonding glue layer;
performing electrical test on the micro device to determine a defective micro device and a target area where the defective micro device is located;
removing the defective micro device and the bonding adhesive layer in the target area;
forming a repairing bonding glue layer in the target area;
and bonding the repaired micro device with the repairing bonding glue layer.
In the mass transfer method for the micro device provided in the above embodiment, a plurality of pad assemblies arranged at intervals are formed on the surface of the substrate, and then a bonding adhesive layer is formed on the surface of the substrate, where the bonding adhesive layer is located between the first pad and the second pad; the micro device is in contact connection with the bonding pad assembly, the micro device and the bonding adhesive layer are mutually bonded, and the micro device and the bonding adhesive layer form temporary bonding to ensure that the micro device cannot be displaced; then, carrying out electrical test on the micro device to determine the micro device with the dead pixel and a target area where the micro device with the dead pixel is located; and removing the defective micro-device and the bonding adhesive layer in the target area, forming a repairing bonding adhesive layer on the surface of the substrate in the target area again, and finally bonding the repairing micro-device with the repairing bonding adhesive layer.
In one embodiment, the thickness of the bonding glue layer is larger than that of the first bonding pad, and the thickness of the bonding glue layer is larger than that of the second bonding pad.
In one embodiment, contacting the micro device with the pad assembly comprises:
providing a temporary carrier plate, wherein a plurality of micro devices which are arranged at intervals are formed on the surface of the temporary carrier plate;
and peeling the micro device from the temporary carrier plate by adopting a crystal-piercing process and transferring the micro device onto the welding disc assembly.
In one embodiment, the pad assembly further comprises a first metal electrode located on the surface of the first pad and the second pad away from the substrate; the micro device comprises epitaxy, a first electrode, a second electrode and a second metal electrode; the epitaxy is positioned on the surface of the temporary carrier plate; the first electrode and the second electrode are both positioned on the surface of the epitaxy layer far away from the temporary carrier plate; the second metal electrode is positioned on the surface, far away from the epitaxy, of the first electrode and the second electrode; after transferring the micro device onto the pad assembly, the second metal electrode is in contact with the first metal electrode.
In one embodiment, the bonding pad assemblies correspond to the micro devices one by one, and the substrate has a driving circuit thereon, wherein the driving circuit is electrically connected to the micro devices through each bonding pad assembly.
In one embodiment, electrically testing the micro device to determine a defective micro device and a target area where the defective micro device is located includes:
introducing current to the driving circuit;
and scanning each micro device by using an image pickup component to determine the dead micro device.
In one embodiment, the removing the defective micro device and the bonding glue layer located in the target area includes:
removing a portion of the bonding glue layer above the pad assembly using a micro blade to remove the bad point micro device;
and removing the residual bonding glue layer.
In one embodiment, after bonding the repair micro device to the repair bond paste layer, the method further comprises:
and repeating the steps of removing the micro device with the dead points and repairing the micro device and the bonding glue layer until the micro device with the dead points is repaired and replaced.
In one embodiment, the bond pad assembly further comprises a first metal electrode, the micro device comprises epitaxy, a first electrode, a second electrode, and a second metal electrode; after the repairing micro device is bonded with the repairing bonding glue layer, the method further comprises the following steps:
the first metal electrode and the second metal electrode are dissolved and solidified using a laser welding process or a reflow welding process.
A second aspect of the present application provides a display panel, comprising: the micro-device is prepared by the mass transfer method of the micro-device.
The foregoing description is only an overview of the technical solutions of the present invention, and in order to make the technical solutions of the present invention more clearly understood and to make the technical solutions of the present invention practical in accordance with the contents of the specification, the following detailed description is given of preferred embodiments of the present invention with reference to the accompanying drawings.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain drawings of other embodiments based on these drawings without any creative effort.
Fig. 1 is a schematic flow chart of a method for fabricating a semiconductor structure provided in an embodiment of the present application;
fig. 2 is a schematic partial cross-sectional view of a substrate and a pad assembly formed on a surface of the substrate according to an embodiment of the present disclosure;
FIG. 3 is a schematic cross-sectional view of a structure obtained after forming a bonding glue layer according to an embodiment of the present application;
fig. 4 is a schematic cross-sectional structure diagram of a temporary carrier and a micro device formed on the surface of the temporary carrier provided in an embodiment of the present application;
fig. 5 is a schematic cross-sectional structure diagram of a structure obtained after a micro device is bonded with a bonding glue layer according to an embodiment of the present application;
fig. 6 is a schematic diagram of light emission of a micro device after a current is applied to a driving circuit in a substrate according to an embodiment of the present disclosure;
FIG. 7 is a schematic diagram of an image capture device for identifying and recording defective pixels in an embodiment of the present application;
FIG. 8 is a schematic cross-sectional view of a structure obtained after removing a portion of the bonding glue layer higher than the bonding pad assembly according to an embodiment of the present disclosure;
FIG. 9 is a schematic cross-sectional view of a structure obtained after removing a remaining portion of the bonding glue layer provided in an embodiment of the present application;
FIG. 10 is a cross-sectional view of a structure obtained after forming a repair bond paste layer according to an embodiment of the present application;
fig. 11 is a schematic cross-sectional view of a structure obtained after bonding a repair micro-device to a repair bond paste layer according to an embodiment of the present application.
Description of reference numerals: 100. a display panel; 10. a substrate; 11. a pad assembly; 111. a first bonding pad; 112. a second pad; 113. a first metal electrode; 12. bonding the adhesive layer;
20. a temporary carrier plate; 21. a micro device; 211. performing epitaxy; 212. a first electrode; 213. a second electrode; 214. a second metal electrode;
30. a dead-spot micro device; 40. repairing the bonding glue layer; 50. and repairing the micro device.
Detailed Description
To facilitate an understanding of the present application, the present application will now be described more fully with reference to the accompanying drawings. Preferred embodiments of the present application are shown in the drawings. This application may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used in the description of the present application herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
It will be understood that when an element or layer is referred to as being "on," "adjacent to," "connected to," or "coupled to" other elements or layers, it can be directly on, adjacent to, connected or coupled to the other elements or layers or intervening elements or layers may be present. In contrast, when an element is referred to as being "directly on," "directly adjacent to," "directly connected to" or "directly coupled to" other elements or layers, there are no intervening elements or layers present. It will be understood that, although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present application.
Spatial relational terms such as "under," "below," "under," "above," "over," and the like may be used herein for convenience in describing the relationship of one element or feature to another element or feature as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements or features described as "below" or "beneath" other elements or features would then be oriented "above" the other elements or features. Thus, the exemplary terms "under" and "under" can encompass both an orientation of above and below. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatial descriptors used herein interpreted accordingly.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. As used herein, the term "and/or" includes any and all combinations of the associated listed items.
Embodiments of the application are described herein with reference to cross-sectional views that are schematic illustrations of idealized embodiments (and intermediate structures) of the application. As such, variations from the shapes of the illustrations as a result, for example, of manufacturing techniques and/or tolerances, are to be expected. Thus, embodiments of the present application should not be limited to the particular shapes of regions illustrated herein but are to include deviations in shapes that result, for example, from manufacturing, the regions illustrated in the figures being schematic in nature and their shapes are not intended to illustrate the actual shape of a region of a device and are not intended to limit the scope of the present application.
In one embodiment of the present application, as shown in FIG. 1, there is provided a micro device bulk transfer method comprising the steps of:
step S10: providing a substrate, wherein a plurality of pad assemblies which are arranged at intervals are formed on the surface of the substrate, and each pad assembly comprises a first pad and a second pad;
step S20: forming a bonding adhesive layer on the surface of the substrate, wherein the bonding adhesive layer is positioned between the first bonding pad and the second bonding pad;
step S30: contacting and connecting the micro device with the bonding pad assembly, and bonding the micro device with the bonding adhesive layer;
step S40: performing electrical test on the micro device to determine a defective micro device and a target area where the defective micro device is located;
step S50: removing the defective-point micro device and the bonding glue layer positioned in the target area;
step S60: forming a repairing bonding glue layer in the target area;
step S70: and bonding the repaired micro device with the repaired bonding glue layer.
In the mass transfer method for the micro device provided in the above embodiment, a plurality of pad assemblies arranged at intervals are formed on the surface of the substrate, and then a bonding adhesive layer is formed on the surface of the substrate, where the bonding adhesive layer is located between the first pad and the second pad; the micro device is in contact connection with the bonding pad assembly, the micro device and the bonding adhesive layer are mutually bonded, and the micro device and the bonding adhesive layer form temporary bonding to ensure that the micro device cannot be displaced; then, carrying out electrical test on the micro device to determine the micro device with the dead pixel and a target area where the micro device with the dead pixel is located; and removing the micro-device with the dead pixel and the bonding adhesive layer positioned in the target area, forming a repairing bonding adhesive layer on the surface of the substrate in the target area again, and finally bonding the repairing micro-device with the repairing bonding adhesive layer, so that the micro-device with the dead pixel can be simply repaired, and the trouble of repairing after reflow soldering is avoided.
In one embodiment, as shown in fig. 2, a pad assembly 11 is formed on a surface of the substrate 10, and the pad assembly 11 includes a first pad 111, a second pad 112, and a first metal electrode 113. The first pad 111 and the second pad 112 are both located on the surface of the substrate 10, and the first metal electrode 113 is located on the surface of the first pad 111 and the second pad 112 away from the substrate 10.
By way of example, the first metal electrode 113 includes but is not limited to a tin-plated electrode, the tin-plated electrode can replace solder paste, the problem that after the solder paste is printed, die bonding needs to be completed within several hours, so that the solder paste deteriorates after a long time, and the method is suitable for direct display of tens of millions of micro devices; the material of the substrate 10 may include, but is not limited to, sapphire, silicon carbide, silicon or gallium arsenide, etc.
In one embodiment, as shown in fig. 3, the bonding glue layer 12 is formed on the surface of the substrate 10 in step S20, and the bonding glue layer 12 is located between the first pad 111 and the second pad 112; the bonding glue layer 12 may be located at a middle position of the first pad 111 and the second pad 112.
In an embodiment, with continued reference to fig. 3, the thickness of the bonding glue layer 12 is greater than the thickness of the first pad 111, the thickness of the bonding glue layer 12 is greater than the thickness of the second pad 112, and further, the upper surface of the bonding glue layer 12 is higher than the upper surface of the first metal electrode 113, so that after the micro device is peeled off from the temporary carrier, the micro device forms a temporary bond with the pad assembly 11, and the micro device is ensured to form a flip-chip bonding contact connection with the pad assembly 11 to complete an electrical connection, thereby preventing the micro device from being displaced in a subsequent operation process.
Specifically, the substrate 10 is placed on a machine, and the adhesive layer 12 is bonded at the middle position of the first bonding pad 111 and the second bonding pad 112 by using a high-speed dispensing module.
By way of example, the bonding glue layer 12 includes, but is not limited to, silver glue, red glue, hot melt glue, silicone glue, AB glue, quick-drying glue, solder paste, epoxy glue, underfill glue, black glue, anaerobic glue, high temperature resistant glue, or milky glue, among others.
In one embodiment, step S30: the method for connecting the micro device with the bonding pad component in a contact mode comprises the following steps:
step S31: providing a temporary carrier plate 20, wherein a plurality of micro devices 21 arranged at intervals are formed on the surface of the temporary carrier plate 20, as shown in fig. 4;
step S32: the micro device 21 is peeled off the temporary carrier plate 20 using a flip-chip process and transferred onto the pad assembly 11 as shown in fig. 5.
Specifically, the dummy wafer aligns the micro device 21 to the substrate 10 and is pressed against the pad by a dummy wafer head (not shown), the bonding glue layer 12 sticks to the micro device 21, and the temporary carrier 20 springs back along with the dummy wafer head, thereby separating the temporary carrier 20. In addition, after the display panel is finally formed, the temporary carrier 20 may be removed by a material changing mechanism, or the temporary carrier 20 may be manually removed.
As an example, as shown in fig. 4, the Micro device 21 provided in step S30 may include, but is not limited to, a Micro LED chip, a Mini LED chip photo detector diode, a MOS device, a MEMS (Micro-Electro-Mechanical System) device, or the like.
In one embodiment, with continued reference to fig. 4, the micro device 21 includes an epitaxy 211, a first electrode 212, a second electrode 213, and a second metal electrode 214; the epitaxy 211 is located on the surface of the temporary carrier 20; the first electrode 212 and the second electrode 213 are both located on the surface of the epitaxy layer 211 away from the temporary carrier 20; the second metal electrode 214 is disposed on the surface of the first electrode 212 and the second electrode 213 away from the epitaxy layer 211.
Specifically, after the micro device 21 is transferred onto the pad assembly 11, the second metal electrode 214 and the first metal electrode 113 are in contact with each other to ensure the electrical conductivity between the micro device 21 and the pad assembly 11, and the micro device and the pad assembly 11 can be normally connected, and at the same time, the normally connected micro device 21 can be lighted up after the substrate 10 is powered on.
For example, the material and shape of the first electrode 212 and the second electrode 213 are not limited, and the material of the first electrode 212 and the second electrode 213 may include, but is not limited to, an alloy material formed of one or any combination of Cr, ti, al, ni, pt, W, pb, rh, sn, cu, and Ag. The first electrode 212 and the second electrode 213 may be made of the same material or different materials; the first electrode 212 may be a P electrode, and the second electrode 213 may be an N electrode; or the first electrode 212 may be an N electrode and the second electrode 213 may be a P electrode.
In one embodiment, the pad assemblies 11 correspond to the micro devices 21 one by one, and the substrate 10 has a driving circuit (not shown), and the driving circuit is electrically connected to the micro devices 21 through each pad assembly 11.
In one embodiment, step S40: the method for electrically testing the micro device 21 to determine the micro device with the defective pixel and the target area where the micro device with the defective pixel is located includes the following steps:
step S41: applying a current to the driving circuit to light each micro device 21, as shown in fig. 6;
step S42: each micro device 21 is scanned using an image pickup device to determine a defective micro device 30, as shown in fig. 7.
Specifically, the micro device 21 is scanned using an image pickup device, and the defective micro device 30 is identified and recorded. The dead micro-device 30 is a pixel dark spot of the display panel, causing the pixel dark spot to be typically the following: firstly, the method comprises the following steps: in the process of mass transfer, the Micro LED chip is in poor contact with the driving back plate; secondly, the method comprises the following steps: in the detection and repair process, the Micro LED chip is repaired badly; thirdly, the method comprises the following steps: the Micro LED chip has damaged products and quality defects, and the problem of pixel dark spots can be caused. In the prior art, the repair is mostly carried out by adopting a double Micro LED chip or designing a repair circuit.
In one embodiment, step S50: removing the micro-device 30 with the bad spots and the bonding glue layer 12 in the target area, including:
step S51: removing a portion of the bonding glue layer 12 higher than the pad assembly 11 using a micro blade to remove the bad point micro device 30, as shown in fig. 8;
step S52: the remaining portion of the bonding glue layer 12 is removed as shown in fig. 9.
Specifically, an operating head (not shown) having a micro blade and a suction nozzle may be used to suck the micro-device 30, and then the micro blade is used to remove a portion of the bonding adhesive layer 12 to remove the micro-device 30; a micro blade may be used to remove the remaining portion of the bonding glue layer 12, and the upper surface of the remaining portion of the bonding glue layer 12 is flush with the upper surface of the first metal electrode.
In one embodiment, as shown in fig. 10, the repairing bonding glue layer 40 formed in step S60 is located on the surface of the substrate 10, and is located between the first pad 111 and the second pad 112. The process for forming the repair bonding glue layer 40 is the same as the process for forming the bonding glue layer 12, and the detailed description thereof is omitted.
In one embodiment, as shown in fig. 11, in step S70, the repair microdevice 50 is bonded to the repair bonding adhesive layer 40 by using a die bonding process, and the repair microdevice 50 is flip-bonded to the corresponding pad assembly 11 to form an electrical connection. Note that the repair micro-device 50 is a pre-stored micro-device that can emit light normally.
Of course, the step S40 can be repeated to perform an electrical test on the repaired micro-device 50 to determine whether the repaired micro-device is a defective micro-device.
In one embodiment, step S70: after bonding the repaired micro device 50 to the repair bond paste layer 40, the method further comprises the following steps:
step S80: the steps of removing the micro device 30 with the dead spots and repairing the micro device 50 and the bonding glue layer 40 are repeated until the micro devices with the dead spots are repaired and replaced.
Specifically, steps S50-S70 may be repeated until all bad-point micro devices 30 are repaired and replaced.
In one embodiment, step S70: after bonding the repaired micro device 50 to the repair bond paste layer 40, the method further comprises the following steps:
step S90: the first and second metal electrodes 113 and 214 are dissolved and solidified using a laser welding process or a reflow welding process.
If the first metal electrode 113 and the second metal electrode 214 are in contact with each other, whether or not the substrate 10 is on can be checked by applying a current to the substrate. Before reflow soldering, detection is carried out, a part of the bonding adhesive layer 12 is removed to remove the defective-point micro device 30, dispensing is carried out again, the micro device 21 which is normally lighted is replaced, repair can be simply finished, and the complex process of repair after reflow soldering is avoided.
In an embodiment of the present application, with continued reference to fig. 11, a display panel 100 is further provided, including: the micro-device is prepared by the mass transfer method of the micro-device.
Note that the above-described embodiments are for illustrative purposes only and are not meant to limit the present application.
It should be understood that the steps described are not to be performed in the exact order recited, and that the steps may be performed in other orders, unless explicitly stated otherwise. Moreover, at least some of the steps described may include multiple sub-steps or multiple stages that are not necessarily performed at the same time, but may be performed at different times, and the order of performing the sub-steps or stages is not necessarily sequential, but may be performed alternately or in alternation with other steps or at least some of the sub-steps or stages of other steps.
The embodiments in the present specification are all described in a progressive manner, and each embodiment focuses on differences from other embodiments, and portions that are the same and similar between the embodiments may be referred to each other.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.

Claims (8)

1. A method for mass transfer of micro devices, comprising:
providing a substrate, wherein a plurality of pad assemblies which are arranged at intervals are formed on the surface of the substrate, and each pad assembly comprises a first pad, a second pad and a first metal electrode; the first bonding pad and the second bonding pad are both positioned on the surface of the substrate, and the first metal electrode is positioned on the surface, far away from the substrate, of the first bonding pad and the second bonding pad;
forming a bonding glue layer on the surface of the substrate by using a high-speed glue dispensing module, wherein the bonding glue layer is positioned between the first bonding pad and the second bonding pad, the thickness of the bonding glue layer is greater than that of the first bonding pad and the second bonding pad, and the upper surface of the bonding glue layer is higher than that of the first metal electrode;
contacting and connecting the electrode of the micro device with the bonding pad assembly, temporarily bonding the micro device with the bonding glue layer, and not performing reflow soldering;
performing electrical test on the micro device to determine a defective micro device and a target area where the defective micro device is located;
removing the defective pixel micro device and the bonding glue layer positioned in the target area;
forming a repairing bonding glue layer in the target area;
and bonding the repaired micro device with the repairing bonding glue layer, and welding the electrode of the micro device with the welding pad assembly by using a laser welding process or a reflow welding process.
2. The micro device mass transfer method of claim 1, wherein contacting the micro device with the pad assembly comprises:
providing a temporary carrier plate, wherein a plurality of micro devices which are arranged at intervals are formed on the surface of the temporary carrier plate;
and peeling the micro device from the temporary carrier plate by adopting a crystal-piercing process and transferring the micro device onto the welding disc assembly.
3. The micro device mass transfer method of claim 2, wherein the pad assembly further comprises a first metal electrode located on a surface of the first pad and the second pad remote from the substrate; the micro device comprises an epitaxy layer, a first electrode, a second electrode and a second metal electrode; the epitaxy is positioned on the surface of the temporary carrier plate; the first electrode and the second electrode are both positioned on the surface of the epitaxy layer far away from the temporary carrier plate; the second metal electrode is positioned on the surface, away from the epitaxy, of the first electrode and the second electrode; after transferring the micro device onto the pad assembly, the second metal electrode is in contact with the first metal electrode.
4. The method of claim 1, wherein the bonding pad assemblies correspond to the micro devices one to one, and the substrate has a driving circuit thereon, the driving circuit being electrically connected to the micro devices via each of the bonding pad assemblies.
5. The method of claim 4, wherein electrically testing the micro device to determine the bad micro device and the target area where the bad micro device is located comprises:
introducing current to the driving circuit;
and scanning each micro device by using an image pickup component to determine the area of the dead micro device.
6. The method of claim 1, wherein removing the defective micro device and the bonding glue layer in the target area comprises:
removing a portion of the bonding glue layer above the pad assembly using a micro blade to remove the bad point micro device;
and removing the residual bonding glue layer.
7. The micro device mass transfer method of claim 1, further comprising, after bonding the repair micro device to the repair bond paste layer:
and repeating the steps of removing the micro device with the dead points and repairing the micro device and the bonding glue layer until the micro device with the dead points is repaired and replaced.
8. The micro device mass transfer method of claim 1, wherein the pad assembly further comprises a first metal electrode, the micro device comprises epitaxy, a first electrode, a second electrode, and a second metal electrode; after the repairing micro device is bonded with the repairing bonding glue layer, the method further comprises the following steps:
the first metal electrode and the second metal electrode are dissolved and solidified using a laser welding process or a reflow welding process.
CN202211068559.9A 2022-09-02 2022-09-02 Mass transfer method of micro device and display panel Active CN115172191B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202211068559.9A CN115172191B (en) 2022-09-02 2022-09-02 Mass transfer method of micro device and display panel

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202211068559.9A CN115172191B (en) 2022-09-02 2022-09-02 Mass transfer method of micro device and display panel

Publications (2)

Publication Number Publication Date
CN115172191A CN115172191A (en) 2022-10-11
CN115172191B true CN115172191B (en) 2023-01-20

Family

ID=83481270

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202211068559.9A Active CN115172191B (en) 2022-09-02 2022-09-02 Mass transfer method of micro device and display panel

Country Status (1)

Country Link
CN (1) CN115172191B (en)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101005107A (en) * 2006-01-19 2007-07-25 杭州士兰明芯科技有限公司 Flip-chip light emitting diode with metal convex spot array structure and its producing method
CN102569583B (en) * 2011-12-08 2015-12-16 晶科电子（广州）有限公司 Based on luminescent device and the manufacture method thereof of ceramic substrate
CN103378282A (en) * 2012-04-27 2013-10-30 展晶科技(深圳)有限公司 Method for manufacturing light emitting diode encapsulating structures
CN113439332A (en) * 2019-02-21 2021-09-24 维耶尔公司 Photoelectric solid-state array
CN114975747A (en) * 2022-05-19 2022-08-30 Tcl华星光电技术有限公司 LED display panel and manufacturing method

Also Published As

Publication number Publication date
CN115172191A (en) 2022-10-11

Similar Documents

Publication Publication Date Title
CN107251237B (en) Repairing method, manufacturing method and device of micro light-emitting diode and electronic equipment
CN110137128B (en) Method for processing semiconductor device array
CN105518877A (en) Micro light-emitting diode pre-elimination method, manufacturing method, apparatus and electronic equipment
US20210091052A1 (en) Fluidic Assembly Enabled Mass Transfer for MicroLED Displays
CN106170849A (en) The transfer method of micro-light emitting diode, manufacture method, device and electronic equipment
JP2018515942A5 (en)
JP2018506166A5 (en)
JP2009021643A (en) Light-emitting apparatus and manufacturing method thereof
CN111416028B (en) Semiconductor chip repairing method and semiconductor chip repairing device
US20220028924A1 (en) Display device, light-emitting diode substrate, and fabrication method of display device
JP2021110875A (en) Manufacturing method for display device, display device, and intermediate for manufacturing display device
CN112649711B (en) Detection device and method for micro light-emitting diode
CN115274942B (en) Transfer method of miniature flip chip
CN115332401A (en) Method for realizing mass transfer based on laser de-bonding and application
KR20230104098A (en) Fluidic assembly carrier system for mass transition of micro-light emitting diodes and method for mass transition of micro-light emitting diodes
CN115172191B (en) Mass transfer method of micro device and display panel
US11508780B2 (en) Method of manufacturing display apparatus, display apparatus, and structure for manufacturing display apparatus
US20220157796A1 (en) Composite integrated film, composite integrated film supply wafer, and semiconductor composite device
CN115132639A (en) Preparation method of Micro-LED repairing support plate and Micro-LED repairing method of display device
TWI723899B (en) Microchip transfer method and electronic module
CN114975712A (en) Miniature LED chip quality detection structure and detection method thereof
KR102286348B1 (en) Micro LED Package Structure and Method for Assembling Thereof
US20240145443A1 (en) Fluidic Assembly MicroLED Mass Transfer Method
KR102210152B1 (en) Method for manufacturing display apparatus and display apparatus
CN117691005A (en) Chip removing method, transferring method and chip assembly

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant