CN115166890A - Polarizing element, light emitting diode, and light emitting device - Google Patents
Polarizing element, light emitting diode, and light emitting device Download PDFInfo
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- CN115166890A CN115166890A CN202210801135.2A CN202210801135A CN115166890A CN 115166890 A CN115166890 A CN 115166890A CN 202210801135 A CN202210801135 A CN 202210801135A CN 115166890 A CN115166890 A CN 115166890A
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/30—Polarising elements
- G02B5/3025—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state
- G02B5/3058—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state comprising electrically conductive elements, e.g. wire grids, conductive particles
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/30—Polarising elements
- G02B5/3025—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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Abstract
The application provides a polarization element, which comprises a transparent substrate, a plurality of metal wires and a periodic array structure, wherein the metal wires are arranged on the mounting surface of the transparent substrate in parallel at a preset interval; each metal wire extends for a preset length along the direction parallel to the mounting surface; a periodic array structure including protrusions or recesses, the periodic array structure being disposed on the transparent substrate. The polarizer provided by the application can convert Te light (TE, transverse Electric field, TE polarized light is light with vibration components of an Electric field in the y direction) into Tm light (Transverse Magnetic field, TM polarized light is light with vibration components of an Electric field in the x direction), and the TE polarized light is reflected by the polarizer to improve the light intensity and further improve the light extraction efficiency of the polarizer.
Description
Technical Field
The present disclosure relates to the field of semiconductor technologies, and more particularly, to a polarization element, a light emitting diode and a light emitting device.
Background
The polarizing element has metal lines arranged in parallel on a substrate with a shorter period than the wavelength used, and has an air gap between adjacent metal lines, and thus has advantages such as a high extinction ratio and a high transmittance, and is widely used in the field of display projection. With the application prospect of the polarization element in the fields of display projection and the like becoming wider and wider, the polarization degree and the light extraction efficiency also become more and more important, the realization modes of the polarization element at present mainly comprise 2 types, one type is a non-polar or semi-polar GaN substrate, such as a sapphire substrate of an M-plane (M surface), but the polarization degree and the light extraction efficiency of the polarization element are lower; the other type is a polarization element based on a C-plane (C-plane) sapphire substrate, and a subwavelength metal wire grid structure is added on a light-emitting surface, so that better polarization degree and polarization effect are realized. However, in the case of the metal wire grid structure, only 50% of Tm light (Transverse Magnetic field, tm polarized light is light having a vibration component of an electric field in the x direction) can be transmitted theoretically, and the light extraction efficiency is low.
Disclosure of Invention
The present disclosure provides a polarizer, in which a periodic array structure is disposed between a metal line and a light emitting diode, so that Te light (Te, transverse Electric field, te polarized light is light having a vibration component of an Electric field in a y direction) is converted into Tm light, and the Tm light is reflected by the polarizer, thereby improving light intensity and light extraction efficiency of the polarizer.
Another object of the present application is to provide a light emitting diode and a light emitting device, which include the above polarizing element.
In a first aspect, an embodiment of the present application provides a polarization element, including:
the array structure comprises a transparent substrate, a plurality of metal wires and a periodic array structure, wherein the metal wires are arranged on the mounting surface of the transparent substrate in parallel at a preset interval; each metal wire extends for a preset length along the direction parallel to the mounting surface; a periodic array structure including protrusions or recesses, the periodic array structure being disposed on the transparent substrate.
In one possible embodiment, the top view of the periodic array structure comprises an ellipse, a rectangle, or a diamond.
In one possible embodiment, the material of the periodic array structure is a metal, an oxide or a nitride, such as one or more of aluminum, silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide or titanium oxide.
In one possible embodiment, the periodic array structure includes a major axis and a minor axis, and the major/minor axis is ≧ 3.
In one possible embodiment, the dimension of the minor axis is 50 to 150nm.
In one possible embodiment, the period of the periodic array structure in the direction parallel to the short axis is 100 to 200nm.
In one possible embodiment, the periodic array structure has a period of 300 to 800nm in a direction parallel to the long axis.
In one possible embodiment, the angle between the major axis and the wire is 30 ° to 60 °.
In one possible embodiment, the major axis is at an angle of 45 ° to the wire.
In a second aspect, an embodiment of the present application provides a light emitting diode, which includes:
the semiconductor stack layer is provided with a light-emitting surface, and the light-emitting surface is used for emitting at least part of light rays of a light-emitting layer in the semiconductor stack layer;
the polarizing element is arranged on the light emergent surface; the polarization element comprises a transparent substrate, a plurality of metal wires and a periodic array structure, wherein the metal wires are arranged on the mounting surface of the transparent substrate in parallel at a preset interval; each metal wire extends for a preset length along the direction parallel to the mounting surface; a periodic array structure including protrusions or recesses, the periodic array structure being disposed on the transparent substrate.
In one possible embodiment, the top view of the periodic array structure comprises an ellipse, a rectangle, or a diamond.
In one possible embodiment, the material of the periodic array structure is a metal, an oxide or a nitride, such as one or more of aluminum, silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide or titanium oxide.
In a possible embodiment, a wavelength conversion layer, a transparent insulating layer or a transparent conductive layer is further included between the polarizing element and the light exit surface.
In one possible embodiment, the periodic array structure includes a major axis and a minor axis, and the major/minor axis is ≧ 3.
In one possible embodiment, the dimension of the minor axis is 50 to 150nm.
In one possible embodiment, the period of the periodic array structure in the direction parallel to the short axis is 100 to 200nm.
In one possible embodiment, the periodic array structure has a period parallel to the long axis of 300 to 800nm.
In one possible embodiment, the angle between the major axis and the wire is from 30 ° to 60 °.
In one possible embodiment, the major axis is at an angle of 45 ° to the wire.
In a third aspect, embodiments of the present application provide a light emitting device, which includes a support, a light emitting diode disposed on the support, and an encapsulation layer for encapsulating the light emitting diode; the light emitting diode is the light emitting diode in the above embodiment.
Compared with the prior art, the beneficial effects of this application are at least as follows:
this scheme lets Te light turn into Tm light through set up periodic array structure between metal wire and emitting diode to the reflection passes through polarization component, promotes luminous intensity, and then promotes polarization component's luminous efficacy.
Additional advantages, objects, and features of the application will be set forth in part in the description which follows and in part will become apparent to those having ordinary skill in the art upon examination of the following or may be learned from practice of the application. The objectives and other advantages of the application may be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.
It will be appreciated by those skilled in the art that the objects and advantages that can be achieved with the present application are not limited to the specific details set forth above, and that these and other objects that can be achieved with the present application will be more clearly understood from the detailed description that follows.
Drawings
The accompanying drawings, which are included to provide a further understanding of the application, are incorporated in and constitute a part of this application, and are not intended to limit the application. The components in the figures are not necessarily to scale, emphasis instead being placed upon illustrating the principles of the application. In the drawings:
fig. 1 is a schematic diagram of a conventional led structure.
Fig. 2 is a schematic diagram of a conventional led structure.
Fig. 3 is a schematic structural diagram of a light emitting diode according to an embodiment of the present application.
Fig. 4 is a schematic structural diagram of a light emitting diode according to an embodiment of the present application.
Fig. 5 is a schematic structural diagram of a light emitting diode according to an embodiment of the present application.
Fig. 6 is a schematic structural diagram of a light emitting diode according to an embodiment of the present application.
Fig. 7 is a schematic structural diagram of a light emitting diode according to an embodiment of the present application.
Fig. 8 is a schematic structural diagram of a light emitting diode according to an embodiment of the present application.
Fig. 9 is a top view of a polarization component according to an embodiment of the present disclosure.
Fig. 10 is a schematic structural diagram of a light emitting diode according to an embodiment of the present application.
Fig. 11 is a schematic structural diagram of a light emitting diode according to an embodiment of the present application.
Fig. 12 is a schematic structural diagram of a light-emitting device according to an embodiment of the present disclosure.
Fig. 13 is a schematic structural diagram of a light-emitting device according to an embodiment of the present application.
List of reference numbers:
10: polarizing element, 11: a transparent substrate having a transparent surface and a transparent electrode,
12: metal wire, 13: the structure of the array is that the array structure,
20: semiconductor stacked layer, 201: a semiconductor layer of a first type, a second type,
202: light-emitting layer, 203: a semiconductor layer of a second type, which is,
23: first electrode, 24: a second electrode for the second electrode, wherein,
25: insulating layer, 26: a first bonding pad having a first bonding area and a second bonding area,
27: second pad, S100: a support frame is arranged on the upper surface of the bracket,
s200: light emitting diode, S300: and (7) packaging the layer.
Detailed Description
To make the objects, technical solutions and advantages of the embodiments of the present application more apparent, the embodiments of the present application are further described in detail below with reference to the accompanying drawings. The exemplary embodiments and descriptions of the present application are provided to explain the present application and should not be interpreted as limiting the present application.
It should be pre-specified that the term "comprises/comprising" when used herein is taken to specify the presence of stated features, elements, steps or components, but does not preclude the presence or addition of one or more other features, elements, steps or components.
At present, there are 2 types of implementation manners of a polarization element, one is to use a nonpolar or semipolar GaN substrate, such as an M-plane sapphire substrate, but the polarization degree and the light extraction efficiency of the polarization element are low; the other is a polarization element based on a C-plane (C-plane) sapphire substrate, and a subwavelength metal wire grid structure is added on a light-emitting surface, so that better polarization degree and polarization effect are realized, and the structure of the polarization element is shown in fig. 1 or fig. 2. However, in the case of the metal wire grid structure, only 50% of Tm light (Transverse Magnetic field, tm polarized light is light having a vibration component of an electric field in the x direction) can be transmitted theoretically, and the light extraction efficiency is low.
In order to solve the above problems, the present application provides a polarization element including a periodic array structure, so that the degree of polarization is better and the light extraction efficiency is higher.
According to one aspect of the present application, a polarizing element is provided. Referring to fig. 3, the polarizing element includes a transparent substrate 11, a number of metal lines 12, and a periodic array structure 13. A plurality of metal wires 12 are arranged in parallel on the mounting surface of the transparent substrate 11 at a preset interval; each metal wire 12 extends a predetermined length in a direction parallel to the mounting surface; the periodic array structure 13 includes projections or recesses, and the periodic array structure 13 is disposed on the transparent substrate 11.
In one embodiment, the top view of the periodic array structure 13 includes an oval, rectangle, or diamond shape.
In one embodiment, the material of the periodic array structure 13 is a metal, an oxide, or a nitride, such as one or more of aluminum, silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, or titanium oxide.
Referring to fig. 4, in one embodiment, the periodic array structure 13 is disposed on an upper surface of the transparent substrate 11 on which the metal lines 12 are mounted.
In one embodiment, after the periodic array structure 13 is disposed on the upper surface of the transparent substrate 11 on which the metal lines 12 are mounted, the method further includes planarizing the upper surface of the transparent substrate 11. After the planarization process, as shown in fig. 4, the upper surface of the transparent substrate 11 may be flush with the upper surface of the periodic array structure 13, as shown in fig. 5, or higher than the upper surface of the periodic array structure 13.
In one embodiment, the planarization method includes an atomic layer deposition layer formed by an atomic layer deposition method, a high density plasma chemical vapor deposition layer formed by a high density plasma chemical vapor deposition method, or a plasma chemical vapor deposition layer formed by a plasma chemical vapor deposition method, in combination with a chemical mechanical polishing technique.
In one embodiment, the planarization treatment method further includes spin-on SOG (silicon on glass, which refers to a silicon material on glass) and a heat treatment technique.
As an alternative embodiment, the periodic array structure 13 may penetrate the transparent substrate 11 in the longitudinal direction, see fig. 6, and the upper and lower surfaces of the periodic array structure 13 are at the same height as the upper and lower surfaces of the transparent substrate 11.
As an alternative embodiment, referring to fig. 3, the periodic array structure 13 is disposed on a lower surface of the transparent substrate 11 facing away from the metal lines 12.
In another embodiment, the lower surface of the periodic array structure 13 is flush with the lower surface of the transparent substrate 11.
Fig. 9 is a top view of a polarization device according to an embodiment of the present application to more clearly show the relationship between the metal lines 12 and the periodic array structure 13.
In one embodiment, the periodic array structure has an elliptical shape in a top view.
In one embodiment, the periodic array structure includes a major axis b and a minor axis a, with major/minor axis ≧ 3.
In one embodiment, the dimension of the minor axis a is 50 to 150nm.
In one embodiment, the angle α between the major axis b and the wire 12 is 30 ° -60 °.
In one embodiment, the angle α between the major axis b and the metal line 12 is 45 °.
In one embodiment, the period d of the periodic array structure in the direction parallel to the short axis is 100 to 200nm.
In one embodiment, the periodic array structure has a period c in a direction parallel to the long axis of 300 to 800nm.
According to one aspect of the present application, a light emitting diode is provided. Referring to fig. 8, the light emitting diode includes a semiconductor stack layer 20, the semiconductor stack layer 20 including a first type semiconductor layer, a second type semiconductor layer, and a light emitting layer therebetween; the first type semiconductor layer is electrically connected with the first electrode, and the second type semiconductor layer is electrically connected with the second electrode.
The semiconductor stack layer 20 has a light exit surface for exiting at least part of the light emitting layer, and the light exit surface is provided with the polarization element 10. The polarizing element 10 comprises a transparent substrate 11, a number of metal lines 12 and a periodic array structure 13. A plurality of metal wires 12 are arranged in parallel on the mounting surface of the transparent substrate 11 at a preset interval; each metal wire 12 extends a predetermined length in a direction parallel to the mounting surface; the periodic array structure 13 includes protrusions or recesses, and the periodic array structure 13 is disposed on the transparent substrate 11.
In one embodiment, referring to fig. 3, the transparent substrate 11 has a bonding surface directly bonded to the light-emitting surface. Specifically, when the light emitting diode is a single-band light emitting diode such as blue light/red light/green light, the light emitting surface thereof is directly attached to the attaching surface of the transparent substrate 11.
As an alternative embodiment, referring to fig. 7 and 8, an intermediate layer 40 is further included between the polarizing element 10 and the light emitting surface, and the bonding surface of the transparent substrate 11 is bonded to the light emitting surface through the intermediate layer 40, where the intermediate layer 40 is specifically selected from a wavelength conversion layer, a transparent insulating layer, or a transparent conductive layer.
Specifically, when the light emitting diode is a white light emitting diode, the intermediate layer 40 is a wavelength conversion layer, and a light emitting surface of the light emitting diode is attached to the attaching surface of the transparent substrate 11 through the wavelength conversion layer.
Preferably, referring to fig. 7, the light emitting diode further includes a transparent substrate 30, the transparent substrate 30 is formed on the light emitting surface, and the bonding surface of the transparent substrate 11 is bonded to the transparent substrate 30 through an intermediate layer 40. The transparent substrate 30 includes a sapphire substrate, a gallium arsenide substrate, a silicon substrate, a ceramic substrate, or a silicon carbide substrate.
Preferably, referring to fig. 8, the light emitting diode further includes a transparent substrate 30, and the transparent substrate 30 is formed on a surface of the semiconductor stack layer 20 opposite to the light emitting surface. The transparent substrate 30 includes a sapphire substrate, a gallium arsenide substrate, a silicon substrate, a ceramic substrate, or a silicon carbide substrate.
In one embodiment, the light emitting surface is a non-flat surface having non-periodic irregular patterns. The side of the light-emitting surface away from the polarization element 10 is provided with a specular reflection layer, which includes a reflection metal layer, a distributed bragg reflector DBR, and an omnidirectional reflector ODR. Multiple selective extraction of light can be further realized through the light-emitting surface, the specular reflection layer and the polarization element 10, and the utilization rate of light is improved.
In an alternative embodiment, the light emitting surface is a flat surface, and a non-flat layer is formed on the light emitting surface, where the non-flat layer is an intermediate layer such as a wavelength conversion layer, a transparent insulating layer, or a transparent conductive layer. The surface of one side of the non-flat layer, which is far away from the light-emitting surface, is a non-flat surface, and the non-flat surface is provided with an aperiodic irregular pattern. The side of the light-emitting surface away from the polarization element 10 is provided with a specular reflection layer, which includes a reflection metal layer, a distributed bragg reflector DBR, and an omnidirectional reflector ODR. Multiple selective extraction of light can be further realized through the non-flat layer, the specular reflection layer and the polarization element 10, and the utilization rate of light is improved.
The following is an example of the specific implementation structure of the light emitting diode:
referring to fig. 10 and 11, the light emitting diode includes a semiconductor stacked layer 20, and the semiconductor stacked layer 20 includes a first type semiconductor layer 201, a light emitting layer 202, and a second type semiconductor layer 203 from top to bottom. The upper surface of the semiconductor stacked layer 20 is a light-emitting surface, the light-emitting surface includes a transparent substrate 30, and the polarizer 10 is formed on the transparent substrate 30. The lower surface of the semiconductor stacked layer 20 is opened with an opening extending from the second type semiconductor layer 203 to the inside of the first type semiconductor layer 201, a first electrode 23 is formed at the opening, and a second electrode 24 is formed at the lower surface of the semiconductor stacked layer 20 except for the opening. An insulating layer 25 is formed on the lower surface of the semiconductor stacked layer 20, through holes are formed at positions of the insulating layer 25 corresponding to the first electrode 23 and the second electrode 24, a first pad 26 is formed at the through hole corresponding to the first electrode 23, and a second pad 27 is formed at the through hole corresponding to the second electrode 24. In this embodiment, the first type semiconductor layer 201 is an N-type semiconductor layer, the second type semiconductor layer 203 is a P-type semiconductor layer, and the light emitting layer 202 is a multi-layer quantum well layer.
Preferably, an intermediate layer 40 is further included between the polarization element 10 and the transparent substrate 30, and the intermediate layer 40 is a wavelength conversion layer.
Preferably, the light-emitting surface is a non-flat surface having an aperiodic irregular pattern. In this embodiment, the non-planar surface can be prepared by a dry etching method or a wet etching method, and only the proper plasma chemical composition and plasma power need to be set for dry etching, and only the proper etching solution and temperature need to be set for wet etching.
Preferably, a current blocking layer 21 and a transparent conductive layer 22 are sequentially formed on the lower surface of the semiconductor stacked layer 20 except for the opening, and the second electrode 24 is formed on the transparent conductive layer 22.
It should be noted that the structure of the light emitting diode in the embodiment is only exemplary, and the present application is also applicable to light emitting diodes with other structures.
According to one aspect of the present application, a light emitting device is provided. Referring to fig. 12 and 13, the light emitting device includes a support S100, a light emitting diode S200 disposed on the support S100, and an encapsulation layer S300 for encapsulating the light emitting diode S200. The led S200 is the led described in the above embodiments, and the description of the led S200 is not repeated herein.
Preferably, the support S100 is optionally a flat type, or a reflective cup is disposed around an area of the support S100 for mounting the light emitting diode S200, and the reflective cup defines a space for accommodating the light emitting diode S200.
Preferably, the encapsulation layer S300 includes one or a combination of transparent glue, reflective glue, black glue and other opaque glue.
According to the technical scheme, the periodic array structure 13 is arranged between the metal wire 12 and the light emitting diode, so that Te light is converted into Tm light, the Tm light is reflected to pass through the polarization element 10, the light intensity is improved, and the light emitting efficiency of the polarization element is improved.
The foregoing is only a preferred embodiment of the present application, and it should be noted that, for those skilled in the art, several modifications and substitutions can be made without departing from the technical principle of the present application, and these modifications and substitutions should also be regarded as the protection scope of the present application.
Claims (15)
1. A polarization element is characterized by comprising a transparent substrate, a plurality of metal wires and a periodic array structure, wherein the metal wires are arranged on the transparent substrate in parallel at a preset interval; each metal wire extends for a preset length along the direction parallel to the mounting surface; a periodic array structure including protrusions or recesses, the periodic array structure being disposed on the transparent substrate.
2. A polarizing element as claimed in claim 1, wherein the periodic array structure comprises a major axis and a minor axis, the major/minor axis being ≧ 3.
3. A polarizing element as claimed in claim 2, wherein the minor axis has a dimension of 50 to 150nm.
4. A polarizing element as claimed in claim 2, wherein the periodic array structure has a period of 100 to 200nm in a direction parallel to the minor axis.
5. A polarizing element as claimed in claim 2, wherein the periodic array structure has a period parallel to the long axis of 300 to 800nm.
6. A polarizing element as claimed in claim 2, wherein the major axis is at an angle of from 30 ° to 60 ° to the metal wire.
7. A polarizing element as claimed in claim 6, wherein the major axis is at an angle of 45 ° to the metal line.
8. A light emitting diode, comprising: the semiconductor stacking layer is provided with a light emitting surface, and the light emitting surface is used for emitting at least part of light rays of a light emitting layer in the semiconductor stacking layer; the polarizing element is arranged on the light emergent surface; the polarization element comprises a transparent substrate, a plurality of metal wires and a periodic array structure, wherein the metal wires are arranged on the mounting surface of the transparent substrate in parallel at a preset interval; each metal wire extends for a preset length along the direction parallel to the mounting surface; a periodic array structure including protrusions or recesses, the periodic array structure being disposed on the transparent substrate.
9. The LED of claim 8, wherein the periodic array structure comprises a major axis and a minor axis, and the major/minor axis is greater than or equal to 3.
10. The LED of claim 9, wherein the minor axis has a dimension of 50 to 150nm.
11. The light-emitting diode according to claim 9, wherein the period of the periodic array structure in the direction parallel to the short axis is 100 to 200nm.
12. The light-emitting diode according to claim 9, wherein the period of the periodic array structure in the direction parallel to the long axis is 300 to 800nm.
13. The led of claim 9, wherein said major axis is at an angle of 30 ° to 60 ° to said wire.
14. The led of claim 9, wherein said major axis is at an angle of 45 ° to said metal line.
15. The light-emitting device is characterized by comprising a support, a light-emitting diode arranged on the support and an encapsulation layer used for encapsulating the light-emitting diode; the light-emitting diode according to any one of claims 8 to 14.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210801135.2A CN115166890A (en) | 2022-07-07 | 2022-07-07 | Polarizing element, light emitting diode, and light emitting device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210801135.2A CN115166890A (en) | 2022-07-07 | 2022-07-07 | Polarizing element, light emitting diode, and light emitting device |
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| CN115166890A true CN115166890A (en) | 2022-10-11 |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001066429A (en) * | 1999-08-31 | 2001-03-16 | Sumitomo Chem Co Ltd | Polarizing optical device |
| JP2007003756A (en) * | 2005-06-23 | 2007-01-11 | Ricoh Opt Ind Co Ltd | Polarizing optical element, optical part assembly and optical apparatus |
| JP2010231896A (en) * | 2009-03-25 | 2010-10-14 | Asahi Kasei Corp | Backlight unit and display device using the same |
| JP2013007829A (en) * | 2011-06-23 | 2013-01-10 | Nec Corp | Polarizing element and light source unit including the same |
| CN109407404A (en) * | 2018-09-07 | 2019-03-01 | 武汉华星光电技术有限公司 | Backing structure |
-
2022
- 2022-07-07 CN CN202210801135.2A patent/CN115166890A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001066429A (en) * | 1999-08-31 | 2001-03-16 | Sumitomo Chem Co Ltd | Polarizing optical device |
| JP2007003756A (en) * | 2005-06-23 | 2007-01-11 | Ricoh Opt Ind Co Ltd | Polarizing optical element, optical part assembly and optical apparatus |
| JP2010231896A (en) * | 2009-03-25 | 2010-10-14 | Asahi Kasei Corp | Backlight unit and display device using the same |
| JP2013007829A (en) * | 2011-06-23 | 2013-01-10 | Nec Corp | Polarizing element and light source unit including the same |
| CN109407404A (en) * | 2018-09-07 | 2019-03-01 | 武汉华星光电技术有限公司 | Backing structure |
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