CN115161740A - Metallization method for improving electroplating electrode performance of crystalline silicon solar cell - Google Patents
Metallization method for improving electroplating electrode performance of crystalline silicon solar cell Download PDFInfo
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- 238000009713 electroplating Methods 0.000 title claims abstract description 56
- 238000000034 method Methods 0.000 title claims abstract description 48
- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 43
- 238000001465 metallisation Methods 0.000 title claims abstract description 38
- 238000004140 cleaning Methods 0.000 claims abstract description 22
- 238000000137 annealing Methods 0.000 claims abstract description 11
- 238000007641 inkjet printing Methods 0.000 claims abstract description 9
- 239000004065 semiconductor Substances 0.000 claims description 18
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 17
- 229910052709 silver Inorganic materials 0.000 claims description 17
- 239000004332 silver Substances 0.000 claims description 17
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 238000007747 plating Methods 0.000 claims description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 5
- 229910052718 tin Inorganic materials 0.000 claims description 5
- 239000008367 deionised water Substances 0.000 claims description 4
- 229910021641 deionized water Inorganic materials 0.000 claims description 4
- 239000003792 electrolyte Substances 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 4
- 239000007769 metal material Substances 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- 238000007648 laser printing Methods 0.000 claims description 3
- 239000011135 tin Substances 0.000 claims description 3
- 229910017052 cobalt Inorganic materials 0.000 claims description 2
- 239000010941 cobalt Substances 0.000 claims description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 2
- 239000003795 chemical substances by application Substances 0.000 claims 1
- 239000000126 substance Substances 0.000 abstract description 11
- 239000010410 layer Substances 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 239000010953 base metal Substances 0.000 description 7
- 238000005457 optimization Methods 0.000 description 7
- 239000010703 silicon Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 238000007650 screen-printing Methods 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 3
- 229910000510 noble metal Inorganic materials 0.000 description 3
- 238000004445 quantitative analysis Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 239000000356 contaminant Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 238000000556 factor analysis Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/18—Electroplating using modulated, pulsed or reversing current
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
Abstract
The application discloses a metallization method capable of improving the performance of a crystalline silicon solar cell electrode, which comprises the following steps: grooving based on laser grooving and ink-jet printing masks; cleaning the interface of the grooved or unmasked area of the crystalline silicon solar cell; constant current electroplating or constant current light-induced electroplating; and (5) annealing at a low temperature. The surface chemical composition of the grooved area on the surface of the solar cell is adjusted by optimizing the interface cleaning process, so that the problems of interface conductivity, adhesion and the like in the metallization of the conventional solar cell are solved, the contact area between the electroplating electrode and the surface of the crystalline silicon solar cell is increased, the contact resistance is effectively reduced, and the interface adhesion is improved.
Description
Technical Field
The invention relates to the technical field of solar energy, in particular to a metallization method for improving the electrode performance of a crystalline silicon solar cell.
Background
In order to actively cope with global climate change and paris agreement, the production capacity and the loading amount of crystalline silicon solar modules are continuously increasing worldwide, and renewable clean energy is gradually used to replace traditional fossil energy, which helps to control global temperature rise. However, the large silver consumption required for solar cell metallization is rapidly becoming a challenge in the sustainable dimension. By the end of 2021, silver consumption per solar cell of double Passivated Emitter Rear Contact (PERC) was on the order of 90-100 mg per cell. It is estimated that in the future passivated emitter back contact cells will consume around 51% of the global silver supply in 2020 per terawatt of capacity. However, the monolithic silver consumption of tunneling oxide passivation contact (TOPCon) and Heterojunction (HJT) cells that will dominate the market in the future will increase significantly compared to PERC cells, on the order of 1.5 to 2 times that of PERC cells. Therefore, there is a great need to accelerate the development and commissioning of silver-free or silver-poor metallization and interconnection technologies.
The solar cell metallization method based on base metal electroplating or light-induced electroplating of copper, nickel and the like can replace silver paste screen printing and effectively reduce the silver consumption in the production process of the solar cell. In addition, the use of short pulse laser or inkjet printing etchant trenching based processes can effectively reduce the width of the subgrid, typically less than 25 microns, and reduce optical losses. By optimizing the grooving and electroplating processes, such a non-contact process has less impact on the efficiency of the solar cell. In addition to reducing the need for silver paste, this process also protects battery and component manufacturers from the risks posed by worldwide silver price fluctuations. Currently, base metals such as copper and nickel are used in solar cell metallization by constant current plating or constant current photo-induced plating, and the current density used is determined by the dielectric used.
Whether ink-jet printing grooving or laser grooving is used, silicon oxide remains on the surface of a grooved area on the surface of the crystalline silicon solar cell, and therefore interface conductivity, interface resistance and adhesion of a plated electrode are affected.
Disclosure of Invention
In order to overcome the defects of the existing crystalline silicon solar cell, the invention provides a metallization method for improving the electrode performance of the crystalline silicon solar cell and the crystalline silicon solar cell.
Correspondingly, the invention discloses a metallization method for improving the electrode performance of a crystalline silicon solar cell, which comprises the following steps:
grooving based on laser grooving or ink-jet printing masks;
cleaning an interface of a grooved or unmasked area of the crystalline silicon solar cell;
constant current electroplating or constant current light-induced electroplating;
and (5) annealing at a low temperature.
If the short pulse laser is used for slotting the dielectric layer on the surface of the crystalline silicon solar cell, the pulse width of the used laser is less than 50 nanoseconds, the laser wavelength is less than 550 nanometers, the average power of the laser is less than 2 watts, the repetition frequency of the laser is less than 800 kilohertz, and the scanning speed is less than 500 millimeters per second. If ink jet printing grooving is used, the etching machine can select 1% to 10% hydrofluoric acid base etchant, and the driving speed of the ink jet head is less than 300 mm per second.
Cleaning the interface with electrolytes include, but are not limited to: h 2 SO 4 ，H 2 O 2 HC I, HF, buffered oxide etchant BOE, NH 4 OH, deionized water; after the surface pretreatment is completed, the atomic ratios of O/Si and N/Si on the surface are both less than 20%.
When the surface of an n-type semiconductor of a crystalline silicon solar cell is electroplated, constant-current light induction electroplating is needed, electrons in the solar cell flow from a p-type semiconductor to the n-type semiconductor in the metallization process, and the light intensity on the surface of the solar cell is 150-250 watts per square meter; when electroplating is carried out on the surface of a p-type semiconductor of a crystalline silicon solar cell, constant current electroplating is needed under dark light conditions, the light intensity of the surface of the solar cell is less than 20 watts per square meter, and electrons in the solar cell flow from the n-type semiconductor to the p-type semiconductor in a metallization process.
The constant current electroplating or constant current light-induced electroplating is used for electroplating metal electrodes, and the metal materials comprise: the thickness of the electroplated metal electrode is usually between 1 and 15 microns.
The constant current electroplating or constant current light-induced electroplating time is less than 10 minutes, and the current density is less than 60 milliamperes per square centimeter.
The surface chemical composition and surface chemical bonds of the groove opening area on the surface of the solar cell are adjusted by optimizing the interface cleaning process, so that the subsequent interface conductivity (contact resistance) based on the electroplating process and the interface adhesion of the electroplating electrode can be effectively improved. Optimization of the interface cleaning process in the present invention includes, but is not limited to, selection of solution electrolytes and optimization of cleaning time. The surface chemical components of the grooved area on the surface of the solar cell are adjusted by optimizing the interface cleaning process, so that the problems of interface conductivity, adhesion and the like in the existing solar cell electroplating metallization are solved, the contact area between an electroplating electrode and the surface of the crystalline silicon solar cell is increased, the contact resistance is effectively reduced, and the interface adhesion is improved. Compared with the traditional screen printing, the silver consumption of a single cell can be reduced, the width of a secondary grid can be reduced, the optical loss can be reduced, the solar cell metallization based on base metal is realized, the method can be applied to the preparation of crystalline silicon and thin-film solar cells, the dependence of the photovoltaic industry on noble metal silver is reduced, the industrial chain cost is reduced, and the low-cost sustainable development is promoted.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the embodiments or the prior art descriptions will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
FIG. 1 is a flow chart of a metallization method for improving the electrode performance of a crystalline silicon solar cell provided by an embodiment of the invention;
FIG. 2 is a silicon 2p spectrum obtained by elemental quantitative analysis using X-ray photoelectron spectroscopy after interface cleaning in example 1 of the present invention. The main peak of the binding energy of silicon chemical bonds is near 99.3 electron volts, and the main peak of the binding energy of oxide chemical bonds of silicon is near 101 electron volts;
fig. 3 is a main grid tension analysis of a crystalline silicon solar cell using a metallization method based on constant current plating as an experimental control in the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Fig. 1 shows a flowchart of a metallization method for improving the performance of an electrode of a crystalline silicon solar cell in an embodiment of the invention, and the method comprises the following steps:
s11, grooving based on laser or ink-jet printing;
s12, cleaning an interface of a grooved or unmasked area of the crystalline silicon solar cell;
s13, constant current electroplating or constant current light-induced electroplating;
and S14, annealing at low temperature.
This metallization can be applied to the dielectric layer regions on PERC, TOPCon and ibc solar cells.
The metallization method designed by the invention can increase the contact area between the electroplating electrode and the surface of the crystalline silicon solar cell, solve the problems related to interface conductivity, adhesion and the like in the existing solar cell electroplating metallization, effectively reduce contact resistance and improve interface adhesion. Compared with the traditional screen printing, the silver consumption of a single cell can be reduced, the width of a secondary grid can be reduced, the optical loss can be reduced, the solar cell metallization based on base metal is realized, the method can be applied to the preparation of crystalline silicon and thin-film solar cells, the dependence of the photovoltaic industry on noble metal silver is reduced, the industrial chain cost is reduced, and the low-cost sustainable development is promoted.
In the invention, if the dielectric layer on the surface of the crystalline silicon solar cell is grooved by using shorter pulse laser, the pulse width of the used laser is less than 50 nanoseconds, the laser wavelength is less than 550 nanometers, the average power of the laser is less than 2 watts, the laser repetition frequency is less than 800 kilohertz, and the scanning speed is less than 500 millimeters per second. If ink jet printing grooving is used, the etching machine can select 1% to 10% hydrofluoric acid base etchant, and the driving speed of the ink jet head is less than 300 mm per second. The parameters can effectively reduce laser-induced surface damage and are beneficial to improving the open-circuit voltage and the pseudo-filling factor of the solar cell.
In the invention, H can be adopted for cleaning the interface of the grooved area of the crystalline silicon solar cell 2 SO 4 ，H 2 O 2 ，HC I，HF，NH 4 OH, deionized water, and the like, but are not limited to the above listed solvents. The main function of the interface cleaning is to remove surface contaminants such as silicon oxide and dust which affect electroplating, reduce the influence of the surface contaminants on the conductivity and adhesion between the metal layer and the surface of the solar cell, and improve the interface conductivity and adhesion of the solar cell metallization method designed by the invention. And carrying out quantitative element analysis on the laser grooving area subjected to interface cleaning by using X-ray photoelectron spectroscopy, and ensuring that the atomic ratios of O/Si and N/Si on the surface are both less than 20%.
In the invention, when the surface of an n-type semiconductor of a crystalline silicon solar cell is electroplated, constant-current light-induced electroplating is needed, electrons in the solar cell flow from a p-type semiconductor to the n-type semiconductor in the metallization process, and the light intensity on the surface of the solar cell is 150-250 watts per square meter; when electroplating the surface of the p-type semiconductor of the crystalline silicon solar cell, constant current electroplating is needed under dark light conditions, so that electrons in the solar cell flow from the n-type semiconductor to the p-type semiconductor in the metallization process.
In the present invention, the metal electrode material for electroplating by the constant current electroplating or the constant current light-induced electroplating may be nickel, copper, silver, tin, cobalt, or other metal materials, but is not limited to the above-mentioned metal materials. The thickness of the plated metal electrode is 1-15 microns, the thickness of the base metal accounts for 80-100% of the total thickness, and a silver or tin protective layer of 0.5-1 micron is adopted on the outermost layer to prevent the increase of the volume resistance caused by the oxidation failure of the base metal.
In the invention, the time of the constant-current electroplating or the constant-current light-induced electroplating is less than 10 minutes, the current density is less than 60 milliamperes per square centimeter, and metal ions in an electric double layer between the surface of the solar cell and the electroplating solution can be effectively supplemented. If the current density is too high, depletion of metal ions in the electric double layer may occur, and embrittlement failure of the plated electrode may further occur. Furthermore, hydrogen evolution during the electroplating process may occur, which may embrittle the electroplated electrode.
By using the metallization method which can improve the conductivity and the adhesion of the electroplating electrode interface of the silicon solar cell, the residual pollutants such as silicon oxide in the grooved area can be reduced, and the conductivity and the adhesion of the interface can be improved. As shown in fig. 1, fig. 2 and table 1, the residual oxynitride remained in the grooved region can be effectively removed by the optimized interface cleaning process, so that the atomic ratios of surface O/Si and N/Si are both less than 20% (the atomic ratios of surface O/Si and N/Si before optimization are about 50% -70%), thereby improving the interface adhesion and conductivity, and reducing the contact and series resistance.
In the invention, low-temperature annealing is carried out after constant-current electroplating or constant-current light-induced electroplating, the annealing time is less than 5 minutes, and the annealing temperature is less than 500 ℃. The low temperature annealing helps to reduce the internal stress of the plated electrode and the bulk resistance.
The above-described scheme is further illustrated with reference to specific examples.
Example 1
In this example 1, a TOPCon solar cell is used, and the preparation process is as follows:
1. the dielectric layer on the surface of the crystalline silicon TOPCon solar cell is grooved by using a short pulse laser with the pulse width of 500 picoseconds, the laser wavelength is 532 nanometers, the average laser power is 0.1 watt, the laser repetition frequency is 200 kilohertz, and the scanning speed is 300 millimeters per second.
2. Using RCA Standard cleanMethod (NH) 4 OH:H 2 O 2 :H 2 O, 1.
3. The silicon oxide on the surface of the grooved TOPCon solar cell is removed by using a 7.
4. The TOPCon solar cell was cleaned with deionized water for approximately 1 minute and dried.
5. Quantitative analysis of elements on the surface of TOPCon solar cell after groove and interface cleaning is carried out by using X-ray photoelectron spectroscopy, wherein the atomic ratio of O/Si and N/Si on the surface is less than 20 percent
6. And sequentially depositing nickel, copper and tin as compact layers in the groove area on the surface of the TOPCon solar cell by using constant-current electroplating or constant-current light-induced electroplating, wherein the thicknesses are respectively 1.5 micrometers, 11 micrometers and 0.8 micrometer.
7. Furthermore, the time of the constant current electroplating or the constant current light-induced electroplating of the nickel, the copper and the tin is respectively 1 minute, 11 minutes and 0.5 minute, and the current density is less than 60 milliamperes per square centimeter.
8. Finally, low-temperature annealing is utilized, the annealing time is about 4 minutes, and the annealing temperature is 400-500 ℃.
FIG. 2 shows the spectrum of silicon 2p obtained by elemental quantitative analysis using X-ray photoelectron spectroscopy after interface cleaning in example 1. The main peak of the binding energy of silicon chemical bonds is near 99.3 electron volts, and the main peak of the binding energy of silicon oxide chemical bonds is near 101 electron volts; figure 3 shows a crystalline silicon solar cell main grid tension analysis using a metallization method based on constant current plating as an experimental control,
table 1 shows the series resistance and fill factor analysis of a crystalline silicon solar cell using a metallization method based on constant current plating as an experimental control in the present invention.
TABLE 1
| Before optimization | After optimization | |
| Fill factor FF (%) | 70.38±1.25 | 81.07±0.83 |
| Series resistance R S (Ωcm 2 ) | 0.53±0.03 | 0.25±0.04 |
The surface chemical composition and surface chemical bonds of the groove opening area on the surface of the solar cell are adjusted by optimizing the interface cleaning process, so that the subsequent interface conductivity (contact resistance) based on the electroplating process and the interface adhesion of the electroplating electrode can be effectively improved. Optimization of the interface cleaning process in the present invention includes, but is not limited to, selection of solution electrolytes and optimization of cleaning time. The surface chemical components of the grooved area on the surface of the solar cell are adjusted by optimizing the interface cleaning process, so that the problems of interface conductivity, adhesion and the like in the existing solar cell electroplating metallization are solved, the contact area between an electroplating electrode and the surface of the crystalline silicon solar cell is increased, the contact resistance is effectively reduced, and the interface adhesion is improved. Compared with the traditional screen printing, the silver consumption of a single cell can be reduced, the width of a secondary grid can be reduced, the optical loss can be reduced, the solar cell metallization based on base metal is realized, the method can be applied to the preparation of crystalline silicon and thin-film solar cells, the dependence of the photovoltaic industry on noble metal silver is reduced, the industrial chain cost is reduced, and the low-cost sustainable development is promoted.
The above embodiments of the present invention are described in detail, and the principle and the implementation of the present invention are described herein by using specific embodiments, and the description of the above embodiments is only used to help understanding the method of the present invention and the core idea thereof; meanwhile, for a person skilled in the art, according to the idea of the present invention, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present invention.
Claims (6)
1. A metallization method that can improve the performance of crystalline silicon solar cell electrodes, the method comprising:
slotting based on laser or ink jet printing;
cleaning the interface of the grooved or unmasked area of the crystalline silicon solar cell;
constant current electroplating or constant current light-induced electroplating;
and (5) annealing at a low temperature.
2. The metallization method for improving the performance of the electrode of the crystalline silicon solar cell as claimed in claim 1, wherein if the short pulse laser is used to groove the dielectric layer on the surface of the crystalline silicon solar cell, the pulse width of the laser is less than 50 ns, the laser wavelength is less than 550 nm, the average power of the laser is less than 2 w, the laser repetition frequency is less than 800 khz, the scanning speed is less than 500 mm/s, if the ink jet printing groove is used, the etching machine can select 1% to 10% hydrofluoric acid base etching agent, and the ink jet head driving speed is less than 300 mm/s.
3. The metallization method capable of improving the electrode performance of the crystalline silicon solar cell as claimed in claim 1, wherein the interface cleaning electrolyte includes but is not limited to: h 2 SO 4 ，H 2 O 2 HC I, HF, buffered oxide etchant BOE, NH 4 OH, deionized water; after the surface pretreatment is completed, the atomic ratios of O/Si and N/Si on the surface are both less than 20%.
4. The metallization method for improving the electrode performance of the crystalline silicon solar cell, as claimed in claim 1, wherein when the n-type semiconductor surface of the crystalline silicon solar cell is plated, a constant current light is used to induce the plating, and electrons in the solar cell flow from the p-type semiconductor to the n-type semiconductor during the metallization process, and the light intensity on the surface of the solar cell is 150-250 watts per square meter; when the surface of a p-type semiconductor of a crystalline silicon solar cell is electroplated, constant current electroplating is needed under the dark light condition, the light intensity of the surface of the solar cell is less than 20 watts per square meter, and electrons in the solar cell flow from an n-type semiconductor to the p-type semiconductor in the metallization process.
5. The metallization method for improving the performance of the crystalline silicon solar cell electrode in accordance with claim 1, wherein the constant current electroplating or constant current light induced electroplating is used for electroplating the metal material in the metal electrode, and includes but is not limited to: nickel, copper, silver, tin, cobalt, plated metal electrodes are typically between 1-15 microns thick.
6. The metallization method for improving the electrode performance of the crystalline silicon solar cell according to claim 1,
the constant current electroplating or constant current light-induced electroplating time is less than 10 minutes, and the current density is less than 60 milliamperes per square centimeter.
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| US6084175A (en) * | 1993-05-20 | 2000-07-04 | Amoco/Enron Solar | Front contact trenches for polycrystalline photovoltaic devices and semi-conductor devices with buried contacts |
| CN102222729A (en) * | 2011-05-31 | 2011-10-19 | 浙江晶科能源有限公司 | Method for improving electroplating quality of front electrode of solar cell |
| CN104752551A (en) * | 2013-12-25 | 2015-07-01 | 新奥光伏能源有限公司 | Cleaning method of solar silicon wafer |
| CN104505407A (en) * | 2014-11-21 | 2015-04-08 | 广东爱康太阳能科技有限公司 | Laser grooving gate-buried electrode solar cell and method for preparing the same |
| CN106449876A (en) * | 2016-10-17 | 2017-02-22 | 无锡尚德太阳能电力有限公司 | Producing method of selective emitter double-faced PERC crystalline silicon solar cell |
| CN113937170A (en) * | 2021-10-19 | 2022-01-14 | 通威太阳能（成都）有限公司 | Crystalline silicon solar cell and metallization method thereof |
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