CN115132893A - Patterned substrate and manufacturing method thereof - Google Patents
Patterned substrate and manufacturing method thereof Download PDFInfo
- Publication number
- CN115132893A CN115132893A CN202210885253.6A CN202210885253A CN115132893A CN 115132893 A CN115132893 A CN 115132893A CN 202210885253 A CN202210885253 A CN 202210885253A CN 115132893 A CN115132893 A CN 115132893A
- Authority
- CN
- China
- Prior art keywords
- substrate
- patterned
- pattern
- refractive index
- dielectric layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention provides a pattern substrate and a manufacturing method thereof, wherein the pattern substrate comprises a substrate and a plurality of pattern structures periodically distributed above the substrate, the refractive index of the pattern structures is gradually reduced from the bottom to the top of the pattern structures, and the maximum refractive index of the pattern structures is less than or equal to that of the substrate. Compared with the common pattern substrate which is single in refractive index and fixed in the prior art, the pattern substrate provided by the invention covers a wider incident light angle meeting total reflection, can achieve more light rays meeting the emergent conditions, and thus effectively improves the light extraction efficiency of the LED chip.
Description
Technical Field
The invention belongs to the technical field of semiconductor device preparation, and particularly relates to a patterned substrate and a manufacturing method thereof.
Background
Because of the advantages of high luminous efficiency, longer service life and the like, the LED is widely applied to the fields of various light sources such as backlight, illumination, landscape and the like at present, and further improvement of the luminous efficiency of the LED chip is still the key point of current industry development. The luminous efficiency of the LED chip mainly depends on the internal quantum efficiency and the light extraction efficiency, and in the prior art, the luminous efficiency of the LED chip can be improved by patterning the substrate, so that on one hand, the dislocation density in an epitaxial layer can be reduced by growing an LED structure on the patterned substrate, and the internal quantum efficiency is improved; on the other hand, the pattern substrate structure can reflect the light emitted by the LED and change the transmission direction of the light, thereby improving the light extraction efficiency.
Simulation and experiment prove that the light extraction efficiency can be improved by the low-refractive-index heterogeneous material pattern substrate, so that SiO is generally adopted 2 (refractive index 1.5) is used as a material for patterning the surface of the sapphire (refractive index 1.7) substrate, but how to further improve the light extraction efficiency of the LED chip becomes a difficulty in the prior art.
Disclosure of Invention
In view of the above drawbacks of the prior art, the present invention provides a pattern substrate and a method for fabricating the same, the pattern substrate includes a substrate and a plurality of pattern structures periodically arranged above the substrate, the pattern structures have a refractive index gradually decreasing from a bottom to a top of the pattern structures, and a maximum refractive index of the pattern structures is smaller than or equal to a refractive index of the substrate. Compared with the common pattern substrate which is single in refractive index and fixed in the prior art, the pattern substrate provided by the invention covers a wider incident light angle meeting total reflection, can achieve more light rays meeting the emergent conditions, and thus effectively improves the light extraction efficiency of the LED chip.
To achieve the above and other related objects, the present invention provides a pattern substrate comprising:
a substrate;
the pattern structures are periodically arranged above the substrate, the refractive index of the pattern structures is gradually reduced from the bottom to the top in the direction far away from the substrate, and the maximum refractive index of the pattern structures is smaller than or equal to the refractive index of the substrate.
Optionally, the pattern structure is formed into a conical, polyhedral conical, circular truncated cone or polyhedral truncated cone structure.
Optionally, the top width of the pattern structure is less than or equal to 3 μm, the bottom width is between 0.5 μm and 6 μm, and the bottom width is greater than the top width.
Optionally, the pattern structure includes a first portion formed on the surface of the substrate and a second portion formed over the first portion.
Optionally, the cross-sectional area of the first portion of the graphical structure is equal to or greater than the cross-sectional area of the bottom of the second portion of the graphical structure.
Optionally, the first part of the pattern structure is formed into a polygonal mesa structure or a circular truncated cone structure, and the second part of the pattern structure is formed into a conical, polyhedral conical, circular truncated cone or polyhedral mesa structure.
Optionally, a top width of the second portion of the pattern structure is less than or equal to 3 μm, a bottom width of the second portion of the pattern structure is between 0.5 μm and 6 μm, and the top width of the first portion is equal to the bottom width of the second portion.
Optionally, the first portion and the second portion of the pattern structure are formed of different materials, wherein the material forming the first portion of the pattern structure is the same as the material of the substrate.
Optionally, the material of the substrate is selected from Al 2 O 3 、GaN、AlN、MgAl 2 O 4 、LiAlO 2 、LiGaO 2 、MgO、GaAs、Ga 2 O 3 To (3) is provided.
The invention also provides a manufacturing method of the pattern substrate, which comprises the following steps:
s1: providing a substrate;
s2: depositing a medium layer above the substrate, wherein the refractive index of the medium layer is gradually reduced in the direction far away from the substrate, and the maximum refractive index of the medium layer is less than or equal to the refractive index of the substrate;
s3: and etching the dielectric layer to form a plurality of periodically arranged pattern structures.
Optionally, in the process of depositing the dielectric layer in step S2, a doping gas is introduced into the reaction chamber, and the type and content of the doping gas are adjusted to form the dielectric layer with a gradually decreasing refractive index.
Optionally, step S3 further includes etching a portion of the substrate, where the portion of the substrate is etched to form a first portion of the pattern structure, and the dielectric layer is etched to form a second portion of the pattern structure.
The pattern substrate and the manufacturing method thereof have the following beneficial effects:
the pattern substrate provided by the invention comprises a substrate and a plurality of pattern structures periodically arranged above the substrate, wherein the refractive index of the pattern structures is gradually reduced from the bottom to the top of the pattern structures, and the maximum refractive index of the pattern structures is less than or equal to that of the substrate. Compared with the common pattern substrate which is single in refractive index and fixed in the prior art, the pattern substrate provided by the invention has the advantages that the angle of incident light meeting total reflection is wider, more light rays can meet the emergent condition, and the light extraction efficiency of the LED chip is effectively improved.
Drawings
Fig. 1 is a schematic structural diagram of a patterned substrate according to an embodiment.
FIG. 2 is a schematic diagram illustrating a photoresist layer formed on a surface of the dielectric layer in step S3 according to an embodiment.
Fig. 3 is a schematic diagram illustrating the formation of a patterned dielectric layer in step S3 according to an embodiment.
Fig. 4 is a schematic structural diagram of a patterned substrate according to a second embodiment.
Fig. 5 is a schematic diagram illustrating a plurality of cylinder patterns arranged in a periodic manner in the second embodiment.
Description of the element reference
1 substrate
2 graphic structure
200 dielectric layer
201 first optical film
202 second optical film
20 cylinder pattern
21 first part
22 second part
300 photo resist layer
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the present invention, and although the drawings only show the components related to the present invention and are not drawn according to the number, shape and size of the components in actual implementation, the form, quantity, position relationship and proportion of the components in actual implementation can be changed freely on the premise of implementing the technical solution of the present invention, and the layout form of the components may be more complicated.
Example one
The present embodiment provides a composite pattern substrate, as shown in fig. 1, including a substrate 1 and a plurality of pattern structures 2 periodically arranged above the substrate 1.
For example, the material of the substrate 1 is selected from materials that are easily epitaxial, and may be selected from Al, for example 2 O 3 、GaN、AlN、MgAl 2 O 4 、LiAlO 2 、LiGaO 2 、MgO、GaAs、Ga 2 O 3 In the present embodiment, a sapphire substrate (Al) is used 2 O 3 ) For example, Al 2 O 3 The refractive index of the material is about 1.7.
The pattern structure 2 may be a cone, a polyhedron cone, a truncated cone, or a polyhedron truncated structure, and the present embodiment will be described with reference to the truncated cone structure as an example. As shown in FIG. 1, the top width d of the pattern structure 2 1 Less than or equal to 3 μm, when the top width d 1 When the thickness is equal to 0 μm, the pattern structure 2 is formed into a conical structure or a polyhedral conical structure; width d of the bottom 2 0.5-6 μm and a bottom width d 2 Greater than topWidth d of the portion 1 。
As an example, the pattern structure 2 is made of a multilayer optical film, the refractive index of the pattern structure 2 is gradually decreased from the bottom to the top in the direction away from the substrate, and the maximum refractive index of the pattern structure 2 is smaller than or equal to the refractive index of the substrate 1 since the substrate material of the present embodiment is Al 2 O 3 The refractive index thereof is about 1.7, and therefore, the refractive index of the bottom of the pattern structure 2 is less than or equal to 1.7. In the present embodiment, the pattern structure 2 includes a first optical film 201 and a second optical film 202 in sequence from bottom to top, and the first optical film 201 is, for example, SiO x N y A film, from the bottom to the top of the first optical film 201, the refractive index of the first optical film 201 gradually decreases from 1.7 to 1.5; the second optical film 202 is SiO x F y The refractive index of the second optical film 202 decreases from 1.5 to 1.3 from the bottom to the top of the second optical film 202. The material at the interface of the first optical film 201 and the second optical film 202 is gradually SiO x N y Transition to SiO x F y Therefore, in the whole view, from the bottom to the top of the pattern structure 2, the refractive index of the pattern structure 2 is gradually reduced from 1.7 to 1.3, the incident light angle satisfying the total reflection is wider, more light rays satisfying the emergent condition can be achieved, and the light extraction efficiency is improved.
The embodiment also provides a manufacturing method of the patterned substrate, which comprises the following steps:
s1: providing a substrate;
as shown in FIG. 2, the material of the substrate 1 is selected from materials that are easily epitaxial, and may be selected from Al, for example 2 O 3 、GaN、AlN、MgAl 2 O 4 、LiAlO 2 、LiGaO 2 、MgO、GaAs、Ga 2 O 3 In the present embodiment, a sapphire substrate (Al) is used 2 O 3 ) For example.
S2: depositing a medium layer above the substrate, wherein the refractive index of the medium layer is gradually reduced in the direction away from the substrate, and the refractive index of the bottom of the medium layer is less than or equal to that of the substrate;
as an example, the material of the dielectric layer may be SiO 2 、Si 3 N 4 、ZnO 2 、Si、SiC、GaAs、Ti 3 O 5 、TiO 2 In this embodiment, SiO is used as the material for the film 2 The description is given for the sake of example. The dielectric layer may be formed using a Plasma Enhanced Chemical Vapor Deposition (PECVD) technique.
And introducing doping gas in the deposition process of the dielectric layer, and adjusting the type and the flow rate of the doping gas to obtain the dielectric layer with the gradually reduced refractive index. The dielectric layer is SiO 2 (refractive index of about 1.5) as an example, to SiO 2 The N atom doping of the dielectric layer can improve the refractive index of the dielectric layer to SiO 2 F atom doping is carried out on the dielectric layer, so that the refractive index of the dielectric layer can be reduced; and the flow rate of the doping gas is different, and the refractive index of the medium layer is also different. Optionally, when N atoms are doped during the deposition of the dielectric layer, SiH may be selected as the doping gas 4 、N 2 O、NH 3 、N 2 (ii) a C may be selected for F atom doping 2 F 6 。
Firstly, when N atom doping is carried out in the deposition process of a dielectric layer, doping gas SiH is introduced into a deposition chamber 4 、N 2 O、NH 3 While controlling N 2 O、NH 3 To obtain materials with refractive indices of 1.5, 1.6, 1.7, respectively, to finally form a material with a refractive index greater than that of SiO 2 SiO (refractive index of about 1.5) x N y . In this process, to obtain a material with gradually decreasing refractive index, it is necessary to gradually increase N 2 Flow of O while reducing NH 3 The flow rate of (c). As shown in FIG. 2, in the present embodiment, one or more layers of SiO x N y The film forms a first optical film 201, and the refractive index of the first optical film 201 gradually decreases from 1.7 to 1.5 from the bottom to the top of the first optical film 201.
Then, the medium layer is continuously deposited and F atom doping is carried out, and doping gas SiH is introduced into the deposition chamber 4 、N 2 O、C 2 F 6 While controlling C 2 F 6 OfIn an amount to obtain a refractive index of less than SiO 2 (refractive index of about 1.5) SiO x F y . In this process, if a material with gradually decreasing refractive index is to be obtained, C is gradually increased 2 F 6 The flow rate of (c). As shown in FIG. 2, in the present embodiment, one or more layers of SiO x F y The film forms the second optical film 202, and the refractive index of the second optical film 202 gradually decreases from 1.5 to 1.3 from the bottom to the top of the second optical film 202.
As shown in fig. 2, the first optical film 201 and the second optical film 202 together form a dielectric layer 200, and the refractive index of the dielectric layer 200 decreases from 1.7 to 1.3 from the bottom to the top of the dielectric layer 200 as a whole. As an example, the thickness h of the dielectric layer 200 1 Is between 0.1 and 15 mu m.
S3: and etching the dielectric layer to form a plurality of periodically arranged pattern structures.
As shown in FIG. 2, a photoresist layer 300 is spin-coated on the dielectric layer 200, wherein the photoresist layer 300 has a thickness h 2 0.5-5 μm; then, a patterned photoresist layer is formed by using an imprinting or exposure developing method, and the patterned photoresist layer includes a plurality of periodically arranged cylindrical photoresist patterns as an example.
Next, the dielectric layer 200 is etched using the patterned photoresist layer as a mask layer to form a patterned dielectric layer. In the embodiment, the patterned dielectric layer includes a plurality of cylinder patterns 20 arranged periodically, as shown in fig. 3, a diameter W of a bottom surface of each cylinder pattern 20 is 0.5 μm to 9.5 μm, and a distance a between centers of adjacent cylinder patterns 20 is 0.5 μm to 10 μm.
And finally, etching the cylindrical pattern 20 by adopting a dry etching process, wherein the etching depth is 0.5-10 mu m, and forming the structure shown in the figure 1.
Example two
The present embodiment also provides a patterned substrate, as shown in fig. 4, including a substrate 1 and a plurality of pattern structures 2 periodically arranged above the substrate 1.
The difference between this embodiment and the first embodiment is that, as shown in fig. 4, the pattern structure 2 in this embodiment includes a first portion 21 formed on the surface of the substrate and a second portion 22 formed above the first portion 21, and the cross-sectional area of the first portion 21 is greater than or equal to the cross-sectional area of the bottom of the second portion 22.
As an example, the first portion 21 of the pattern structure is formed in a polygonal mesa structure or a circular truncated cone structure, and the second portion 22 of the pattern structure is formed in a conical, polyhedral conical, circular truncated cone or polyhedral truncated cone structure. As shown in FIG. 4, the top width d of the second portion 22 1 Less than or equal to 3 μm, when the width of the top is d 1 Equal to 0 μm, the second portion 22 is formed in a conical structure or a polyhedral conical structure, and the width d of the bottom of the second portion 22 2 0.5-6 μm; the top width of the first portion 21 is equal to the bottom width of the second portion, the bottom width d of the first portion 21 3 0.8-10 μm.
As an example, the material forming the first portion 21 and the second portion 22 of the pattern structure is different, and the material forming the first portion 21 is the same as the material forming the substrate, and may be selected from Al, for example 2 O 3 、GaN、AlN、MgAl 2 O 4 、LiAlO 2 、LiGaO 2 、MgO、GaAs、Ga 2 O 3 In the present embodiment, a sapphire substrate (Al) is used 2 O 3 ) For example; the second portion 22 is made of a multilayer optical film, the refractive index of the second portion 22 gradually decreases from bottom to top in the direction away from the substrate, and the maximum refractive index of the second portion 22 is smaller than or equal to the refractive index of the first portion 21, since the material forming the first portion 21 of the present embodiment is Al 2 O 3 The refractive index is about 1.7, and thus the maximum refractive index of the second portion 22 is less than or equal to 1.7. In the present embodiment, the second portion 22 includes a first optical film 201 and a second optical film 202 in sequence from bottom to top, and the first optical film 201 is SiO as an example x N y A film, from the bottom to the top of the first optical film 201, the refractive index of the first optical film 201 gradually decreases from 1.7 to 1.5; the second optical film 202 is SiO x F y Film of a second optical filmThe refractive index of the second optical film 202 decreases from 1.5 to 1.3 from the bottom to the top of the film 202. The material at the interface of the first optical film 201 and the second optical film 202 is gradually SiO x N y Transition to SiO x F y Therefore, from the bottom to the top of the second portion 22, the refractive index of the second portion 22 is gradually reduced from 1.7 to 1.3, so that the incident light angle satisfying the total reflection is wider, more light rays satisfying the emergent condition can be obtained, and the light extraction efficiency is improved.
Compared with the method for manufacturing a composite pattern substrate provided in the first embodiment, the method for manufacturing a composite pattern substrate provided in the first embodiment further includes, in step S3 of the first embodiment: and etching a part of the substrate, wherein the etching part of the substrate 1 forms a first part 21 of the pattern structure, and the etching medium layer 200 forms a second part 22 of the pattern structure.
Referring to fig. 5, the dielectric layer 200 and a portion of the substrate 1 are etched using the patterned photoresist layer as a mask layer to form a plurality of periodically arranged cylinder patterns 20. In the present embodiment, the diameter W of the bottom surface of the cylinder patterns 20 is 0.5 μm to 9.5 μm, and the distance A between the centers of the adjacent cylinder patterns 20 is 0.5 μm to 10 μm.
Finally, the cylinder pattern 20 is etched by a dry etching process, and the etching depth is 0.5-10 μm, so as to form the structure shown in fig. 4.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Those skilled in the art can modify or change the above-described embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (12)
1. A patterned substrate, comprising:
a substrate;
the pattern structures are periodically arranged above the substrate, the refractive index of the pattern structures is gradually reduced from the bottom to the top in the direction far away from the substrate, and the maximum refractive index of the pattern structures is smaller than or equal to that of the substrate.
2. The patterned substrate of claim 1, wherein the patterned structures are formed as conical, pyramidal, truncated conical, or truncated polyhedral structures.
3. The patterned substrate of claim 2, wherein the top width of the patterned structure is 3 μm or less, the bottom width is in the range of 0.5 μm to 6 μm, and the bottom width is greater than the top width.
4. The patterned substrate of claim 1, wherein the patterned structure comprises a first portion formed on the surface of the substrate and a second portion formed over the first portion.
5. The patterned substrate of claim 4, wherein a cross-sectional area of the first portion of the patterned structure is equal to or greater than a cross-sectional area of the bottom of the second portion of the patterned structure.
6. The patterned substrate of claim 5, wherein a first portion of the patterned structures are formed as polygonal mesas or truncated cones and a second portion of the patterned structures are formed as cones, polyhedral cones, truncated cones, or polyhedral truncated cones.
7. The pattern substrate according to claim 6, wherein a top width of the second portion of the pattern structure is 3 μm or less, a bottom width of the second portion of the pattern structure is 0.5 μm to 6 μm, and a top width of the first portion is equal to the bottom width of the second portion.
8. The patterned substrate of claim 4, wherein the first and second portions of the patterned structure are formed of different materials, wherein the first portion of the patterned structure is formed of the same material as the substrate.
9. Patterned substrate according to claim 1 or 8, characterized in that the material of the substrate is selected from Al 2 O 3 、GaN、AlN、MgAl 2 O 4 、LiAlO 2 、LiGaO 2 、MgO、GaAs、Ga 2 O 3 One kind of (1).
10. A method for manufacturing a patterned substrate is characterized by comprising the following steps:
s1: providing a substrate;
s2: depositing a dielectric layer above the substrate, wherein the refractive index of the dielectric layer is gradually reduced in the direction away from the substrate, and the maximum refractive index of the dielectric layer is less than or equal to that of the substrate;
s3: and etching the dielectric layer to form a plurality of periodically arranged pattern structures.
11. The method of claim 10, wherein during the step of depositing the dielectric layer in step S2, a dopant gas is introduced into the reaction chamber, and the type and content of the dopant gas are adjusted to form the dielectric layer with gradually decreasing refractive index.
12. The method for making the patterned substrate according to claim 10, wherein step S3 further comprises etching a portion of the substrate, wherein etching the portion of the substrate forms a first portion of the patterned structure and etching the dielectric layer forms a second portion of the patterned structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210885253.6A CN115132893A (en) | 2022-07-26 | 2022-07-26 | Patterned substrate and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210885253.6A CN115132893A (en) | 2022-07-26 | 2022-07-26 | Patterned substrate and manufacturing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115132893A true CN115132893A (en) | 2022-09-30 |
Family
ID=83385586
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210885253.6A Pending CN115132893A (en) | 2022-07-26 | 2022-07-26 | Patterned substrate and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115132893A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116544332A (en) * | 2023-07-06 | 2023-08-04 | 江西兆驰半导体有限公司 | Patterned sapphire substrate and preparation method thereof |
-
2022
- 2022-07-26 CN CN202210885253.6A patent/CN115132893A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116544332A (en) * | 2023-07-06 | 2023-08-04 | 江西兆驰半导体有限公司 | Patterned sapphire substrate and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100669142B1 (en) | Light emitting element and method for manufacturing thereof | |
| EP1858090B1 (en) | Light emitting diode having multi-pattern structure | |
| US20100019263A1 (en) | Rough structure of optoelectronic device and fabrication thereof | |
| CN110797442A (en) | Patterned substrate, LED epitaxial wafer and patterned substrate preparation method | |
| CN102034907A (en) | Graph masking method for improving luminous efficiency of GaN base LED (light-emitting diode) | |
| CN103597619A (en) | Method for manufacturing element | |
| CN215070019U (en) | Graphical composite substrate and LED chip thereof | |
| EP2495773A1 (en) | Light-emitting diode and method for manufacturing same | |
| CN115132893A (en) | Patterned substrate and manufacturing method thereof | |
| WO2022134009A1 (en) | Patterned substrate, light-emitting diode and preparation method | |
| WO2014161378A1 (en) | Nitride light-emitting diode and manufacturing method | |
| CN110112271A (en) | A kind of bottom has the LED epitaxial structure and preparation method thereof of recessed nano graph | |
| CN115020565B (en) | Preparation method of composite patterned substrate and epitaxial structure with air gap | |
| CN112820806B (en) | Patterned substrate and manufacturing method thereof, and LED structure and manufacturing method thereof | |
| CN108346718A (en) | Utilize the compound pattern substrate and preparation method thereof that low-index material is medium | |
| KR100809508B1 (en) | Light emitting device having plane fresnel lens and fabrication method thereof | |
| CN112201734B (en) | Composite pattern substrate and manufacturing method thereof, and LED structure and manufacturing method thereof | |
| KR100984041B1 (en) | Substrate for semiconductor device, method for fabricating the same and semiconductor device using the same | |
| CN114203875A (en) | Graphical composite substrate, preparation method and LED epitaxial wafer | |
| CN113725325A (en) | Graphical sapphire composite substrate structure and preparation method thereof | |
| CN208352331U (en) | A kind of patterned substrate at bireflectance interface | |
| CN115132894A (en) | Composite pattern substrate and manufacturing method thereof | |
| KR101507127B1 (en) | Patterned substrate and nitride based semiconductor layer fabrication method | |
| CN115020564B (en) | Preparation method of composite patterned substrate and epitaxial structure with air gap | |
| CN108847437A (en) | A kind of epitaxial wafer of light emitting diode and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |