CN115132894A - Composite pattern substrate and manufacturing method thereof - Google Patents

Composite pattern substrate and manufacturing method thereof Download PDF

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Publication number
CN115132894A
CN115132894A CN202210885255.5A CN202210885255A CN115132894A CN 115132894 A CN115132894 A CN 115132894A CN 202210885255 A CN202210885255 A CN 202210885255A CN 115132894 A CN115132894 A CN 115132894A
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China
Prior art keywords
substrate
pattern
composite
side edges
graphic
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Chinese (zh)
Inventor
吴福仁
李彬彬
霍曜
李瑞评
苏贤达
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Fujian Jingan Optoelectronics Co Ltd
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Fujian Jingan Optoelectronics Co Ltd
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Priority to CN202210885255.5A priority Critical patent/CN115132894A/en
Publication of CN115132894A publication Critical patent/CN115132894A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optical Integrated Circuits (AREA)

Abstract

The invention provides a composite pattern substrate and a manufacturing method thereof, wherein the composite pattern substrate comprises a substrate and a plurality of pattern structures which are periodically arranged above the substrate, the pattern structures at least comprise a first part and a second part formed above the first part, and the side wall of the first part is provided with a plurality of first side edges, so that the proportion of an epitaxial face exposed between adjacent pattern structures to the surface of the substrate is smaller, and the improvement of the light extraction rate is facilitated; the lateral wall of second part is the arc lateral wall for light can reflect along all directions when the lateral wall surface reflection of second part, thereby makes the emergent light more even. According to the manufacturing method of the composite pattern substrate, the distance between the adjacent pattern structures is controlled, the first part with the side edges is obtained by utilizing the acting force between the adjacent pattern structures, the manufacturing is simple, the cost can be effectively saved, and the manufacturing efficiency is improved.

Description

Composite pattern substrate and manufacturing method thereof
Technical Field
The invention belongs to the technical field of semiconductor device preparation, and particularly relates to a composite pattern substrate and a manufacturing method thereof.
Background
Because of the advantages of high luminous efficiency, longer service life and the like, the LED is widely applied to the fields of various light sources such as backlight, illumination, landscape and the like at present, and further improvement of the luminous efficiency of the LED chip is still the key point of current industry development. The luminous efficiency of the LED chip mainly depends on internal quantum efficiency and light extraction efficiency, and in the prior art, the luminous efficiency of the LED chip can be improved by patterning a substrate, a commonly used patterned substrate is a conical or pyramidal structure formed on the surface of a sapphire substrate, but how to further improve the light extraction efficiency of the LED chip becomes a difficult point in the prior art.
Disclosure of Invention
In view of the above drawbacks of the prior art, the present invention provides a composite pattern substrate and a method for manufacturing the same, where the composite pattern substrate includes a substrate and a plurality of pattern structures periodically arranged above the substrate, and each pattern structure includes at least a first portion and a second portion formed above the first portion, where the first portion is a frustum structure, so that the proportion of exposed epitaxial crystal planes between adjacent pattern structures to the surface of the substrate is small, and an epitaxial layer with relatively low dislocation density can be obtained, thereby improving light extraction rate; the second part is round platform structure or conical structure, and its lateral wall is the arc lateral wall promptly for light can reflect along all directions when the lateral wall surface reflection of second part, thereby makes the emergent light more even. According to the manufacturing method of the composite pattern substrate, the distance between the adjacent pattern structures is smaller by controlling the distance between the adjacent pattern structures in the etching process, and the arc-shaped side walls at the bottoms of the pattern structures are extruded to form the plurality of side edges by utilizing the acting force between the adjacent pattern structures, so that the first part with the frustum pyramid structure is obtained, the manufacturing is simple, the cost can be effectively saved, and the manufacturing efficiency is improved.
To achieve the above and other related objects, the present invention provides a composite pattern substrate comprising:
a substrate;
a plurality of pattern structures periodically arranged above the substrate, wherein the pattern structures comprise a first part and a second part formed above the first part;
the side wall of the first part is provided with a plurality of first side edges extending along the height direction of the graph structure, and the side wall of the second part is an arc-shaped side wall and is not provided with side edges extending along the height direction of the graph structure.
Optionally, the first portion is of a frustum structure, and the second portion is of a conical structure or a circular truncated cone structure.
Optionally, the pattern structure further includes a third portion formed on the surface of the substrate, the third portion is formed between the substrate and the first portion, a sidewall of the third portion has a plurality of second side edges extending along a height direction of the pattern structure, and the first side edges and the second side edges are overlapped in the height direction of the pattern structure.
Optionally, the width of the upper surface of the third portion is equal to the width of the lower surface of the first portion, and the width of the lower surface of the third portion is between 0.8 μm and 10 μm.
Optionally, the width of the lower surface of the first portion is 0.5 μm to 6 μm, and the width of the upper surface of the second portion is less than or equal to 3 μm.
Optionally, the pattern structure includes one or more optical films, and a material forming a first portion of the pattern structure is the same as a material forming a second portion of the pattern structure.
Optionally, the material of the optical film is selected from SiO 2 、Si 3 N 4 、ZnO 2 、Si、SiC、GaAs、Ti 3 O 5 、TiO 2 One or more of (a).
Optionally, the material forming the third portion of the pattern structure is the same as the material of the substrate and is selected from Al 2 O 3 、GaN、AlN、MgAl 2 O 4 、LiAlO 2 、LiGaO 2 、MgO、GaAs、Ga 2 O 3 One kind of (1).
Optionally, an epitaxial region is formed between adjacent pattern structures, and a width of the epitaxial region is less than or equal to 0.02 μm.
Optionally, the first part is of a hexagonal frustum structure.
The invention also provides a manufacturing method of the composite pattern substrate, which comprises the following steps:
s1: providing a substrate;
s2: depositing a dielectric layer on the surface of the substrate;
s3: etching the dielectric layer to form a plurality of periodically arranged pattern structures, wherein each pattern structure comprises a first part and a second part formed above the first part, the side wall of the first part is provided with a plurality of first side edges extending along the height direction of the pattern structure, and the side wall of the second part is an arc-shaped side wall and is not provided with side edges extending along the height direction of the pattern structure.
Optionally, step S3 includes:
s31: forming a photoresist layer on the surface of the dielectric layer;
s32: exposing and developing the photoresist layer to form a patterned photoresist layer;
s33: etching the dielectric layer by taking the patterned photoresist layer as a mask layer to form a patterned dielectric layer, wherein the patterned dielectric layer comprises a plurality of periodically arranged cylinder patterns;
s34: and etching the patterned dielectric layer to obtain a plurality of periodically arranged pattern structures.
Optionally, step S3 further includes etching a portion of the substrate, where the portion of the substrate is etched to form a third portion of the pattern structure, a sidewall of the third portion has a plurality of second side edges extending along a height direction of the pattern structure, and the first side edges and the second side edges are overlapped in the height direction.
Optionally, the width of the bottom of the pattern structure is 0.5 μm to 9.5 μm.
Optionally, the height of the pattern structure is 0.5 μm to 10 μm.
Optionally, the distance between the centers of adjacent pattern structures is between 0.5 μm and 10 μm.
The composite pattern substrate and the manufacturing method thereof have the following beneficial effects:
the composite pattern substrate comprises a substrate and a plurality of pattern structures periodically arranged above the substrate, wherein the pattern structures at least comprise a first part and a second part formed above the first part, the first part is a prismatic table structure, so that the proportion of an epitaxial crystal face exposed between adjacent pattern structures to the surface of the substrate is small, an epitaxial layer with relatively low dislocation density can be obtained, and the light extraction rate is improved; the second part is round platform structure or conical structure, and its lateral wall is the arc lateral wall promptly for light can be followed all directions and reflected when the lateral wall surface reflection of second part, thereby makes the emergent light more even.
According to the manufacturing method of the composite pattern substrate, the distance between the adjacent pattern structures is smaller by controlling the distance between the adjacent pattern structures in the etching process, and the arc-shaped side walls at the bottoms of the pattern structures are extruded to form a plurality of side edges by utilizing the acting force between the adjacent pattern structures, so that the first part with the frustum pyramid structure is obtained. Therefore, the method for manufacturing the composite pattern substrate can obtain the first part with the frustum pyramid structure without changing a photomask plate, is simple to manufacture, can effectively save cost and improve manufacturing efficiency.
Drawings
Fig. 1 is a schematic structural diagram of a composite pattern substrate according to an embodiment.
Fig. 2 is a schematic diagram illustrating a ratio of an epitaxial region to a substrate according to an embodiment.
Fig. 3 is a schematic diagram illustrating the formation of a photoresist layer on the surface of the dielectric layer in step S3 according to an embodiment.
Fig. 4 is a schematic diagram illustrating the formation of a patterned dielectric layer in step S3 according to an embodiment.
Fig. 5 is a schematic diagram illustrating the formation of a pattern structure having an arc-shaped sidewall in step S3 according to an embodiment.
Fig. 6 is a schematic structural diagram of a composite pattern substrate according to a second embodiment.
Fig. 7 is a schematic diagram illustrating a plurality of cylinder patterns arranged in a periodic manner in the second embodiment.
Description of the element reference
1 first side edge of substrate 210
2 second side edge of the pattern structure 230
20 cylinder pattern 200 dielectric layer
21 first portion 300 photoresist layer
22 second part 10 epitaxial region
23 third part
Detailed Description
The following embodiments of the present invention are provided by specific examples, and other advantages and effects of the present invention will be readily apparent to those skilled in the art from the disclosure of the present invention. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the present invention, and although the drawings only show the components related to the present invention and are not drawn according to the number, shape and size of the components in actual implementation, the form, quantity, position relationship and proportion of the components in actual implementation can be changed freely on the premise of implementing the technical solution of the present invention, and the layout form of the components may be more complicated.
Example one
The present embodiment provides a composite pattern substrate, as shown in fig. 1, including a substrate 1 and a plurality of pattern structures 2 periodically arranged above the substrate 1.
As an exampleThe material of the substrate 1 is selected from materials that are easily epitaxial, and may be selected from Al, for example 2 O 3 、GaN、AlN、MgAl 2 O 4 、LiAlO 2 、LiGaO 2 、MgO、GaAs、Ga 2 O 3 Of these, the present embodiment uses a sapphire substrate (Al) 2 O 3 ) For example.
As shown in fig. 1, the pattern structure 2 includes a first portion 21 and a second portion 22 formed above the first portion 21, wherein a sidewall of the first portion 21 has a plurality of first side edges 210 extending in a height direction of the first portion 21, that is, in the height direction of the pattern structure 2, and a sidewall of the second portion 22 is an arc-shaped sidewall without a side edge extending in the height direction of the pattern structure.
As an example, the first portion 21 is of a prismatic frustum structure, and the width d of the bottom of the first portion 21 1 Is between 0.5 and 6 mu m. Preferably, the first portion 21 is a hexagonal frustum structure, as shown in fig. 2, an epitaxial region 10 is formed between adjacent pattern structures 2, and all epitaxial regions 10 on the surface of the substrate 1 constitute an epitaxial plane, generally, the smaller the epitaxial surface occupation ratio of the patterned substrate surface is, the lower the dislocation density of the epitaxial layer is, the higher the light extraction rate is, when the first portion 21 is the hexagonal frustum structure, the regular hexagon is a bottom surface thereof, and at this time, the smaller the epitaxial surface occupation ratio of the patterned substrate 2 exposed out of the substrate is, and the epitaxial layer with relatively low dislocation density can be obtained, so as to improve the light extraction rate. In the present embodiment, the width d of the epitaxial region 10 4 Less than or equal to 0.02 μm.
By way of example, the second portion 22 is of a conical or frustoconical configuration. As shown in FIG. 1, the top width d of the second portion 22 2 Less than or equal to 3 μm when the width d of the top of the second portion 22 is larger 2 Equal to 0 μm, the second portion 22 is formed as a conical structure; the width of the bottom of the second portion 22 is equal to the width of the top of the first portion 21, and the pattern structure 2 gradually transitions from the first portion 21 having a plurality of first side edges 210 to the second portion 22 having curved side walls at the junction of the first portion 21 and the second portion 22. The sidewalls of the second portion 22 are arc-shaped sidewalls without side edges extending in the height direction of the pattern structure, so that light is incident on the sides of the second portion 22When the wall surface is reflected, the reflection can be carried out along all directions, so that the emergent light is more uniform.
As an example, the pattern structure 2 is made of one or more layers of optical films, and the material forming the first portion 21 of the pattern structure is the same as the material forming the second portion 22 of the pattern structure, and the material of the optical films may be selected from SiO 2 、Si 3 N 4 、ZnO 2 、Si、SiC、GaAs、Ti 3 O 5 、TiO 2 One or more of (a). In an alternative embodiment, both the first portion and the second portion are SiO 2 Film, or first part of SiO 2 Film and TiO 2 The second part is also SiO 2 Film and TiO 2 And forming a multilayer film structure by using the film. It is understood that, when the first portion and the second portion are a multilayer structure formed by multilayer optical films, the stacking sequence and the optical thickness of the same optical film in the first portion and the second portion may be the same or different, and may be set and adjusted according to actual needs.
The embodiment also provides a manufacturing method of the composite pattern substrate, which comprises the following steps:
s1: providing a substrate;
as shown in FIG. 3, the material of the substrate 1 is selected from materials that are easily epitaxial, and may be selected from Al, for example 2 O 3 、GaN、AlN、MgAl 2 O 4 、LiAlO 2 、LiGaO 2 、MgO、GaAs、Ga 2 O 3 Of these, the present embodiment uses a sapphire substrate (Al) 2 O 3 ) For example.
S2: depositing a dielectric layer on the surface of the substrate;
as shown in fig. 3, a dielectric layer 200 is formed on the surface of the substrate 1. As an example, the dielectric layer 200 may be formed by a deposition method, for example, the dielectric layer 200 may be formed by placing the substrate 1 in a Plasma Enhanced Chemical Vapor Deposition (PECVD) apparatus and depositing a layer of nucleation inhibiting material over the substrate 1, the dielectric layer 200 may be formed by one or more layers of optical thin films, and the material of the optical thin films may be selected from SiO 2 、Si 3 N 4 、ZnO 2 、Si、SiC、GaAs、Ti 3 O 5 、TiO 2 One or more of (a). In the present embodiment, the thickness h of the dielectric layer 200 1 Is between 0.1 and 15 mu m.
S3: etching the dielectric layer to form a plurality of periodically arranged pattern structures, wherein each pattern structure comprises a first part and a second part formed above the first part, the side wall of the first part is provided with a plurality of first side edges extending along the height direction of the pattern structure, and the side wall of the second part is an arc-shaped side wall and is not provided with side edges extending along the height direction of the pattern structure.
As shown in FIG. 3, a photoresist layer 300 is spin-coated on the dielectric layer 200, wherein the photoresist layer 300 has a thickness h 2 0.5-5 μm; then, a patterned photoresist layer is formed by using an imprinting or exposure developing method, and the patterned photoresist layer includes a plurality of periodically arranged cylindrical photoresist patterns as an example.
Next, the dielectric layer 200 is etched using the patterned photoresist layer as a mask layer to form a patterned dielectric layer. In the embodiment, the patterned dielectric layer includes a plurality of cylinder patterns 20 arranged periodically, as shown in fig. 4, a diameter W of a bottom surface of each cylinder pattern 20 is 0.5 μm to 9.5 μm, a distance a between centers of adjacent cylinder patterns 20 is 0.5 μm to 10 μm, and a distance d between adjacent cylinder patterns 20 4 Less than or equal to 0.02 μm.
Then, the cylinder pattern 20 is etched by a dry etching process to an etching depth h 3 The thickness is 0.5 μm to 10 μm, and the structure shown in fig. 5 is formed, where the sidewall of the pattern structure 2 is an arc sidewall, that is, the pattern structure 2 is a cone structure or a truncated cone structure. Due to the distance d between adjacent cylinder patterns 20 4 Smaller than or equal to 0.02 μm, so that adjacent pattern structures 2 are pressed against each other during etching, and finally a plurality of pattern structures 2 as shown in fig. 1 are formed. The pattern structure 2 comprises a first portion 21 and a second portion 22 formed above the first portion 21, wherein a sidewall of the first portion 21 has an extension in a height direction of the pattern structureThe first part 21 is preferably a hexagonal frustum structure, the bottom surface of the first part 21 is a regular hexagon, the proportion of the epitaxial surface exposed out of the substrate between the adjacent pattern structures 2 to the surface of the substrate 1 is small, and an epitaxial layer with relatively low dislocation density can be obtained, so that the light extraction rate is improved; the side wall of second part 22 is the arc lateral wall, does not have the lateral edge that extends along the direction of height of graphic structure for light can reflect along all directions when the lateral wall surface reflection of second part 22, thereby makes the emergent light more even.
In the manufacturing method of the composite pattern substrate provided by this embodiment, the distance between the adjacent pattern structures is made smaller by controlling the distance between the adjacent pattern structures in the etching process, and then the arc-shaped side walls at the bottoms of the pattern structures are extruded to form the plurality of side edges by using the acting force between the adjacent pattern structures, so as to obtain the first portion having the frustum pyramid structure. Therefore, the method for manufacturing the composite pattern substrate provided by the embodiment can obtain the first part with the frustum pyramid structure without changing a photomask plate, is simple to manufacture, can effectively save the cost, and improves the manufacturing efficiency.
Example two
The present embodiment also provides a composite pattern substrate, as shown in fig. 6, including a substrate 1 and a plurality of pattern structures 2 periodically arranged above the substrate 1.
The difference between this embodiment and the first embodiment is that, as shown in fig. 6, the pattern structure 2 in this embodiment further includes a third portion 23 formed on the surface of the substrate 1, the third portion 23 is formed between the substrate 1 and the first portion 21, a sidewall of the third portion 23 has a plurality of second side edges 230 extending along the height direction of the pattern structure, and the first side edges 210 and the second side edges 230 are overlapped in the height direction.
Illustratively, the third portion 23 has a truncated pyramid configuration, the top width of the third portion 23 is equal to the bottom width of the first portion 21, and the bottom width d of the third portion 23 is equal to the bottom width 3 0.8-10 μm. Preferably, the third portion 23 has a hexagonal frustum structure, in which case the bottom surface of the third portion 23 is a regular hexagon, and the adjacent pattern knotsThe proportion of the epitaxial surface exposed out of the substrate among the structures 2 to the surface of the substrate 1 is small, and the epitaxial layer with relatively low dislocation density can be obtained, so that the light extraction rate is improved.
As an example, the material forming the third portion 23 of the pattern structure is the same as the material forming the substrate 1, and is selected from Al 2 O 3 、GaN、AlN、MgAl 2 O 4 、LiAlO 2 、LiGaO 2 、MgO、GaAs、Ga 2 O 3 To (3) is provided.
In the composite pattern substrate provided in this embodiment, the pattern structure 2 includes a first portion 21, a second portion 22 and a third portion 23, wherein the third portion 23 is located on the surface of the substrate 1, and a sidewall of the third portion 23 has a plurality of second side edges 230 extending along a height direction of the pattern structure, so that a ratio of an epitaxial surface exposed out of the substrate between adjacent pattern structures 2 to the surface of the substrate 1 is small, and an epitaxial layer with relatively low dislocation density can be obtained, thereby improving light extraction efficiency; the top of figure structure 2 is the second part 22 of figure structure, and the lateral wall of second part 22 is the arc lateral wall, does not have the lateral edge that extends along the direction of height of figure structure for light can reflect along all directions when the lateral wall surface reflection of second part 22, thereby makes the emergent light more even.
Compared with the method for manufacturing a composite pattern substrate provided in the first embodiment, the method for manufacturing a composite pattern substrate provided in the first embodiment further includes, in step S3 of the first embodiment: and etching a part of the substrate 1, wherein the part of the substrate 1 is etched to form a third part 23 of the pattern structure, the sidewall of the third part 23 has a plurality of second side edges 230 extending along the height direction of the pattern structure, and the first side edges 210 and the second side edges 230 are overlapped in the height direction.
Referring to fig. 7, the dielectric layer 200 and a portion of the substrate 1 are etched using the patterned photoresist layer as a mask layer to form a plurality of periodically arranged cylinder patterns 20. In the present embodiment, the diameter W of the bottom surface of the cylinder patterns 20 is 0.5 μm to 9.5 μm, the distance A between the centers of the adjacent cylinder patterns 20 is 0.5 μm to 10 μm, and the adjacent cylinder patternsThe distance d between the cylinder patterns 20 4 Less than or equal to 0.02 μm.
Then, the cylinder pattern 20 is etched by a dry etching process to an etching depth h 3 And obtaining a plurality of periodically arranged pattern structures 2 within the range of 0.5-10 μm, wherein the side wall of each pattern structure 2 is an arc-shaped side wall, namely the pattern structure 2 is in a conical structure or a circular truncated cone structure. Due to the distance d between the adjacent cylinder patterns 20 4 Smaller than or equal to 0.02 μm, so that adjacent pattern structures 2 are pressed against each other during etching, and finally a plurality of pattern structures 2 as shown in fig. 6 are formed. In the present embodiment, the pattern structure 2 includes a first portion 21, a second portion 22 and a third portion 23, wherein the third portion 23 is located on the surface of the substrate 1, and a sidewall of the third portion 23 has a plurality of second side edges 230 extending along a height direction of the pattern structure, so that a ratio of an epitaxial surface exposed out of the substrate between adjacent pattern structures 2 to the surface of the substrate 1 is small, and an epitaxial layer with a relatively low dislocation density can be obtained, thereby improving a light extraction rate; the top of figure structure 2 is the second part 22 of figure structure, and the lateral wall of second part 22 is the arc lateral wall, does not have the lateral edge that extends along the direction of height of figure structure for light can reflect along all directions when the lateral wall surface reflection of second part 22, thereby makes the emergent light more even.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Those skilled in the art can modify or change the above-described embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.

Claims (16)

1. A composite graphic substrate, comprising:
a substrate;
a plurality of pattern structures periodically arranged above the substrate, wherein each pattern structure comprises a first part and a second part formed above the first part;
the side wall of the first part is provided with a plurality of first side edges extending along the height direction of the graph structure, and the side wall of the second part is an arc-shaped side wall and is not provided with side edges extending along the height direction of the graph structure.
2. The composite graphic substrate of claim 1, wherein the first portion is a frustum structure and the second portion is a cone structure or a truncated cone structure.
3. A composite graphic substrate according to claim 2, wherein the graphic structure further comprises a third portion formed on the surface of the substrate, the third portion being formed between the substrate and the first portion, a sidewall of the third portion having a plurality of second side edges extending in a height direction of the graphic structure, and the first side edges and the second side edges being coincident in the height direction of the graphic structure.
4. A composite pattern substrate according to claim 3, wherein the width of the upper surface of the third portion is equal to the width of the lower surface of the first portion, and the width of the lower surface of the third portion is in a range of 0.8 μm to 10 μm.
5. The composite pattern substrate according to claim 1 or 4, wherein the width of the lower surface of the first portion is 0.5 μm to 6 μm, and the width of the upper surface of the second portion is 3 μm or less.
6. A composite graphic substrate according to claim 1, wherein the graphic structure comprises one or more optical films and a first portion of the graphic structure is formed of the same material as a second portion of the graphic structure.
7. A composite graphic substrate according to claim 6, characterized in thatCharacterized in that the material of the optical film is selected from SiO 2 、Si 3 N 4 、ZnO 2 、Si、SiC、GaAs、Ti 3 O 5 、TiO 2 One or more of (a).
8. A composite pattern substrate according to claim 3, wherein the material forming the third portion of the pattern structure is the same as the material of the substrate and is selected from Al 2 O 3 、GaN、AlN、MgAl 2 O 4 、LiAlO 2 、LiGaO 2 、MgO、GaAs、Ga 2 O 3 One kind of (1).
9. The composite pattern substrate according to claim 1 or 3, wherein an epitaxial region is formed between adjacent pattern structures, and the width of the epitaxial region is less than or equal to 0.02 μm.
10. A composite graphic substrate according to claim 1 or 3, wherein the first portion is a hexagonal frustum structure.
11. A method for manufacturing a composite pattern substrate is characterized by comprising the following steps:
s1: providing a substrate;
s2: depositing a dielectric layer on the surface of the substrate;
s3: etching the dielectric layer to form a plurality of periodically arranged pattern structures, wherein each pattern structure comprises a first part and a second part formed above the first part, the side wall of the first part is provided with a plurality of first side edges extending along the height direction of the pattern structure, and the side wall of the second part is an arc-shaped side wall and is not provided with side edges extending along the height direction of the pattern structure.
12. The method of claim 11, wherein step S3 includes:
s31: forming a photoresist layer on the surface of the dielectric layer;
s32: exposing and developing the photoresist layer to form a patterned photoresist layer;
s33: etching the dielectric layer by taking the patterned photoresist layer as a mask layer to form a patterned dielectric layer, wherein the patterned dielectric layer comprises a plurality of periodically arranged cylinder patterns;
s34: and etching the patterned dielectric layer to obtain a plurality of periodically arranged pattern structures.
13. The method of claim 12, wherein step S3 further comprises etching a portion of the substrate, wherein etching the portion of the substrate forms a third portion of the patterned structure, the sidewall of the third portion has a plurality of second side edges extending along the height direction of the patterned structure, and the first side edges and the second side edges are coincident in the height direction.
14. A method of fabricating a composite pattern substrate according to claim 12 or 13, wherein the bottom width of the pattern structure is in a range of 0.5 μm to 9.5 μm.
15. A method of fabricating a composite pattern substrate according to claim 12 or 13, wherein the height of the pattern structure is in a range of 0.5 μm to 10 μm.
16. A method of fabricating a composite pattern substrate according to claim 12 or 13, wherein a distance between centers of adjacent pattern structures is 0.5 μm to 10 μm.
CN202210885255.5A 2022-07-26 2022-07-26 Composite pattern substrate and manufacturing method thereof Pending CN115132894A (en)

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Application Number Priority Date Filing Date Title
CN202210885255.5A CN115132894A (en) 2022-07-26 2022-07-26 Composite pattern substrate and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202210885255.5A CN115132894A (en) 2022-07-26 2022-07-26 Composite pattern substrate and manufacturing method thereof

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CN115132894A true CN115132894A (en) 2022-09-30

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