CN115132578B - Electrode pair with nanogap and preparation method thereof - Google Patents
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/304—Field-emissive cathodes
- H01J1/3042—Field-emissive cathodes microengineered, e.g. Spindt-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
- H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/413—Nanosized electrodes, e.g. nanowire electrodes comprising one or a plurality of nanowires
Abstract
The invention relates to the technical field of semiconductor nano electronic devices, in particular to an electrode pair with a nano gap and a preparation method thereof. The preparation method comprises the following steps: a) Growing an insulating layer on a monocrystalline silicon substrate to obtain a base material; b) Preparing a planar metal electrode pair on the substrate by adopting a micro-nano processing technology; c) Preparing a vertical metal electrode pair on the sample obtained in the step B) by adopting an ion beam/electron beam assisted deposition technology, and communicating the vertical metal electrode pair with the planar metal electrode pair obtained in the step B); d) And D) injecting high-energy helium ions into a micro area beside the vertical metal electrode pair obtained in the step C), wherein the micro area generates surface deformation and swelling due to helium ion enrichment, the vertical metal electrode is extruded, and the vertical metal electrode is inclined, so that the gap distance between the two vertical metal electrodes is regulated and controlled, the electrode pair with the nanometer gap is obtained, the structure of the prepared electrode is stable, the size of the nanometer gap can be accurately controlled, and the repeatability is good.
Description
Technical Field
The invention relates to the technical field of semiconductor nano electronic devices, in particular to an electrode pair with a nano gap and a preparation method thereof.
Background
The nano gap structure is an important means for constructing nano electronic devices and molecular electronic devices, and refers to an electron transport channel formed by a vacuum or ultrathin medium layer, and the average size of the electron transport channel is smaller than the average free path of electrons in vacuum or medium, so that the electrons cannot be interfered by factors such as scattering and the like when being transported in the nano gap structure, and the electron transport condition is greatly improved. The vacuum electronic channel device based on the nano-gap structure can effectively reduce the power consumption of the device and improve the working frequency, thereby meeting the development requirements of integration and miniaturization of chip devices, and having obvious application advantages in the fields of communication, detection and the like requiring high frequency and high power, and in the extremely-temperature and high-irradiation environments of space satellite-borne devices and the like.
The device has extremely high requirements on the processing technology of the nano gap structure, the gap size is required to be accurately controlled below 100 nm generally, and particularly in some special application fields such as molecular electronic devices, the gap size is required to be matched with the molecular scale, namely below 10 nm. Therefore, designing and developing a stable and efficient process method with high repeatability and high precision to prepare the nanometer gap structure is a key link for manufacturing the vacuum electronic channel device.
Common methods for fabricating the nanogap structure include electron beam lithography, focused ion beam lithography, mechanical fracture, electromigration fracture, and electrochemical deposition. However, the above methods all have respective disadvantages: the processing line widths of an electron beam lithography process and a focused ion beam etching process are generally more than 20 to 30 nm, and the processing requirement of a sub-10 nm-scale nanometer gap structure required by a molecular electronic device cannot be met; the mechanical fracture method and the electromigration fracture method easily cause a suspension structure and an uncontrollable appearance at a nanometer gap, so that the stability and the repeatability of the device are poor; the electrochemical deposition is easy to introduce additional pollution and is not compatible with the existing microelectronic process.
Disclosure of Invention
In view of the above, an object of the present invention is to provide a pair of electrodes having a nanogap, which can have a smaller gap size, and a method for manufacturing the same.
The invention provides a preparation method of an electrode pair with a nanogap, which comprises the following steps of:
a) Growing an insulating layer on a monocrystalline silicon substrate to obtain a base material;
b) Preparing a planar metal electrode pair on the substrate by adopting a micro-nano processing technology;
c) Preparing a vertical metal electrode pair on the sample obtained in the step B) by adopting an ion beam/electron beam assisted deposition technology, and communicating the vertical metal electrode pair with the planar metal electrode pair obtained in the step B);
d) And C), injecting high-energy helium ions into a micro area beside the vertical metal electrode pair obtained in the step C), wherein the micro area generates surface deformation and swelling due to helium ion enrichment, extruding the vertical metal electrode, and enabling the vertical metal electrode to tilt, so that the gap distance between the two vertical metal electrodes is regulated and controlled, and the electrode pair with the nanometer gap is obtained.
Preferably, in step a), the insulating layer is made of silicon dioxide, silicon nitride, aluminum oxide, hafnium oxide, titanium oxide, polystyrene, PMMA, SU-8, or photoresist.
Preferably, in step a), the insulating layer is grown by thermal oxidation, LPCVD, PECVD, ALD or physical vapor deposition.
Preferably, in the step A), the thickness of the insulating layer is 130 to 200 nm.
Preferably, in step B), the method for preparing the planar metal electrode pair includes the following steps:
patterning photoresist, plating a metal film, and preparing a planar metal electrode pair by adopting a lift-off process;
or plating a metal film, patterning photoresist, and preparing a planar metal electrode pair by adopting a metal etching process;
or plating metal film first and then carrying out focused ion beam etching to obtain the planar metal electrode pair.
Preferably, the photoresist patterning mode is ultraviolet lithography or electron beam lithography;
the equipment for plating the metal film is an electron beam evaporation coating machine, a magnetron sputtering coating machine or a thermal evaporation coating machine;
the electrode material of the planar metal electrode pair includes at least one of gold, platinum, silver, copper, chromium, palladium, nickel, iron, titanium, and tungsten.
Preferably, in step C), the ion beam/electron beam assisted deposition technology employs a focused ion beam system, a helium ion microscope, an SEM or an EBL;
the electrode material of the vertical metal electrode pair is gold, platinum, silver, copper, chromium, palladium, nickel, iron, titanium or tungsten;
the shape of the electrode of the vertical metal electrode pair is a vertical rectangle, a rhombus, a triangle, a columnar body, a circular truncated cone, a prismatic table, a cone or an irregular sheet structure.
Preferably, in the step D), the equipment used for implanting the high-energy helium ions is focused ion beam equipment;
the shape of the micro-area is a straight line, a curve, a rectangle, a circle or an irregular shape.
Preferably, in the step D), the ion energy of the high-energy helium ions is 20 to 30 keV;
the gap distance is 8 to 35 nm.
The invention also provides an electrode pair with a nanogap, which is prepared by the preparation method.
The invention provides a preparation method of an electrode pair with a nanogap, which comprises the following steps of: a) Growing an insulating layer on a monocrystalline silicon substrate to obtain a base material; b) Preparing a planar metal electrode pair on the substrate by adopting a micro-nano processing technology; c) Preparing a vertical metal electrode pair on the sample obtained in the step B) by adopting an ion beam/electron beam assisted deposition technology, and communicating the vertical metal electrode pair with the planar metal electrode pair obtained in the step B); d) And C), injecting high-energy helium ions into a micro area beside the vertical metal electrode pair obtained in the step C), wherein the micro area generates surface deformation and swelling due to helium ion enrichment, extruding the vertical metal electrode, and enabling the vertical metal electrode to tilt, so that the gap distance between the two vertical metal electrodes is regulated and controlled, and the electrode pair with the nanometer gap is obtained.
The preparation method of the electrode pair with the nanogap, provided by the invention, can be used for processing the electrode pair with the nanogap, the electrode pair with the nanogap can have a smaller gap size, and the prepared electrode has a stable structure, the size of the nanogap can be accurately controlled, and the repeatability is good. Meanwhile, the method has simple steps, is easy to integrate with the existing microelectronic process technology, and can be used for manufacturing various vacuum electronic channel devices based on the nanometer gap structure.
Drawings
FIG. 1 is a side view, a top view, and a schematic diagram of the steps of a fabrication process for a nanogap electrode pair according to an embodiment of the invention;
FIG. 2 is an SEM image of an electrode pair having a nanogap according to example 1 of the invention;
FIG. 3 is a graph showing the electrical characteristics of the pair of electrodes having a nanogap prepared in example 1;
FIG. 4 is an SEM image of an oblique view angle of an electrode pair with nanogap prepared in example 2 of the invention;
FIG. 5 is a graph showing the electrical characteristics of an electrode pair having a nanogap, prepared in example 2 of the invention;
FIG. 6 is a top-down imaging SEM photograph of an electrode pair with a nanogap, prepared in example 2 of the invention;
FIG. 7 is an SEM image of tilted-view imaging of the nanogap-equipped electrode pair prepared in example 3 of the invention;
FIG. 8 is a graph showing electrical characteristics of an electrode pair having a nanogap, prepared in example 3 of the invention.
Detailed Description
The technical solutions of the present invention will be described clearly and completely below with reference to embodiments of the present invention, and it should be apparent that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The invention provides a preparation method of an electrode pair with a nanogap, which comprises the following steps of:
a) Growing an insulating layer on a monocrystalline silicon substrate to obtain a base material;
b) Preparing a planar metal electrode pair on the substrate by adopting a micro-nano processing technology;
c) Preparing a vertical metal electrode pair on the sample obtained in the step B) by adopting an ion beam/electron beam assisted deposition technology, and communicating the vertical metal electrode pair with the planar metal electrode pair obtained in the step B);
d) And C), injecting high-energy helium ions into a micro area beside the vertical metal electrode pair obtained in the step C), wherein the micro area generates surface deformation and swelling due to helium ion enrichment, extruding the vertical metal electrode, and enabling the vertical metal electrode to tilt, so that the gap distance between the two vertical metal electrodes is regulated and controlled, and the electrode pair with the nanometer gap is obtained.
Fig. 1 is a side view and a top view of a structure of an electrode pair having a nanogap according to an embodiment of the invention, and a schematic diagram of a manufacturing process thereof. Wherein 1 is a monocrystalline silicon substrate, 2 is an insulating layer, 3 is a planar metal electrode pair, 4 is a vertical metal electrode pair, 5 is high-energy helium ions, and 6 is a micro-region beside the vertical metal electrode pair.
In step A):
an insulating layer 2 is grown on a single-crystal silicon substrate 1 to obtain a base material.
In some embodiments of the present invention, the material of the insulating layer includes silicon dioxide, silicon nitride, aluminum oxide, hafnium oxide, titanium oxide, polystyrene, PMMA, SU-8, or photoresist. In some embodiments, the insulating layer is a silicon dioxide insulating layer.
In some embodiments of the present invention, the insulating layer is grown by thermal oxidation, LPCVD, PECVD, ALD or physical vapor deposition.
In some embodiments of the invention, the thickness of the insulating layer is 20 to 500 nm; in particular, it may be 200 nm, 130 nm or 150 nm.
In step B):
and preparing a planar metal electrode pair 3 on the substrate by adopting a micro-nano processing technology.
In some embodiments of the invention, a pair of planar metal electrode pairs is fabricated on the substrate using micro-nano fabrication techniques.
In certain embodiments of the present invention, the electrode material of the planar metal electrode pair comprises at least one of gold, platinum, silver, copper, chromium, palladium, nickel, iron, titanium, and tungsten. Specifically, titanium and gold; or may be chromium and gold.
In some embodiments of the present invention, the method for preparing the planar metal electrode pair comprises the steps of:
patterning photoresist, plating a metal film, and preparing a planar metal electrode pair by adopting a lift-off process;
or plating a metal film, patterning photoresist, and preparing a planar metal electrode pair by adopting a metal etching process;
or plating metal film first and then carrying out focused ion beam etching to obtain the planar metal electrode pair.
In some embodiments of the present invention, the photoresist is patterned by uv lithography or e-beam lithography. In some embodiments of the present invention, the method of patterning a photoresist comprises:
and spin-coating a photoresist on the substrate, baking and curing, exposing the photoresist by adopting a laser direct-writing ultraviolet lithography technology, developing and fixing.
In some embodiments of the invention, the apparatus for plating the metal film is an electron beam evaporation coater, a magnetron sputter coater, or a thermal evaporation coater. The thickness of the metal film is 10 to 200 nm; specifically, it may be 80 nm or 55 nm. The material of the metal film comprises at least one of gold, platinum, silver, copper, chromium, palladium, nickel, iron, titanium and tungsten.
Specifically, the metal thin film includes: using a magnetron sputtering film plating machine to sputter and grow 10 nm titanium as an adhesion layer, and growing a 70 nm gold layer on the adhesion layer again. Or the metal thin film includes: 5 nm chromium is sputtered and grown as an adhesion layer by using a magnetron sputtering coating machine, and a 50 nm gold layer is regrown on the adhesion layer.
In step C):
preparing a vertical metal electrode pair 4 on the sample obtained in the step B) by adopting an ion beam/electron beam assisted deposition technology, and communicating with the plane metal electrode pair obtained in the step B).
In some embodiments of the invention, the ion beam/electron beam assisted deposition technique employs an apparatus that is a focused ion beam system, a helium ion microscope, a SEM, or an EBL.
In some embodiments of the invention, the electrode material of the pair of upstanding metal electrodes is gold, platinum, silver, copper, chromium, palladium, nickel, iron, titanium or tungsten.
In some embodiments of the invention, the electrodes of the pair of upstanding metal electrodes are shaped as upstanding rectangles, diamonds, triangles, cylinders, truncated cones, truncated pyramids, pyramids or irregular sheet structures.
In some embodiments of the present invention, the shape of the electrodes of the vertical metal electrode pair is a vertical rectangle, and two electrodes of the vertical metal electrode pair are arranged in parallel and are communicated with the planar metal electrode pair obtained in step B).
In some embodiments of the present invention, the electrodes of the vertical metal electrode pair are in the shape of a vertical rectangular electrode and a vertical triangular electrode, and two electrodes of the vertical metal electrode pair are arranged in parallel and are communicated with the planar metal electrode pair obtained in step B).
In step D):
injecting high-energy helium ions 5 into a micro-area 6 beside the vertical metal electrode pair obtained in the step C), wherein the micro-area generates surface deformation and swelling due to helium ion enrichment, extruding the vertical metal electrode and enabling the vertical metal electrode to tilt, so that the gap distance between the two vertical metal electrodes is regulated and controlled, and the electrode pair with the nanometer gap is obtained.
In some embodiments of the present invention, the apparatus for implanting high-energy helium ions is a focused ion beam apparatus, and in particular, may be a helium ion microscope.
In some embodiments of the present invention, the ion energy of the high-energy helium ions is 10 to 35 keV; specifically, it may be 30 keV or 20 keV.
In some embodiments of the invention, the shape of the micro-region is a straight line, a curve, a rectangle, a circle or an irregular shape, and the characteristic dimension (such as the line width and the length of the straight line or the curve, the side length of the rectangle, the diameter of the circle or the overall dimension of the irregular shape) is 10 nm to 2 μm.
In some embodiments of the present invention, the number of the micro-regions is two, specifically, one micro-region is disposed beside each electrode of the vertical metal electrode pair; each micro-region is a rectangular region with the width of 100 nm and the length of 400 nm. Or the number of the micro-areas is one, and specifically, one micro-area is arranged beside one electrode in the vertical metal electrode pair. By injecting high-energy helium ions, the two rectangular electrodes are oppositely inclined and close to each other, so that the gap distance between the two electrodes is controlled to be a nanometer distance.
In some embodiments of the present invention, the electrodes of the vertical metal electrode pair are in the shape of a vertical rectangular electrode and a vertical triangular electrode, and the number of the micro-regions is one, beside the vertical triangular electrode in the vertical metal electrode pair; the micro-area is a rectangular area with the width of 200 nm and the length of 500 nm. The triangular electrode is inclined towards the rectangular electrode by injecting high-energy helium ions, so that the gap distance between the two electrodes is controlled to be a nanometer distance.
In some embodiments of the present invention, the electrodes of the pair of upright metal electrodes are shaped as an upright rectangular electrode and an upright triangular electrode, and the number of the micro-regions is one beside the upright triangular electrode of the pair of upright metal electrodes; the micro-area is a rectangular area with the width of 100 nm and the length of 200 nm. The triangular electrode is inclined towards the rectangular electrode by injecting high-energy helium ions, so that the gap distance between the two electrodes is controlled to be a nanometer distance.
In some embodiments of the invention, the gap distance is 1 to 300 nm; specifically, it may be 8 nm, 21 nm or 35 nm.
The invention also provides an electrode pair with a nanogap, which is prepared by the preparation method.
The source of the above-mentioned raw materials is not particularly limited, and the raw materials may be generally commercially available.
In order to further illustrate the present invention, the following will describe in detail an electrode pair having a nanogap and a method for manufacturing the same according to the present invention with reference to examples, which should not be construed as limiting the scope of the present invention.
Example 1
1) Growing a silicon dioxide insulating layer on a monocrystalline silicon substrate by adopting a thermal oxidation method to obtain a base material; the thickness of the silicon dioxide insulating layer is 200 nm;
2) Preparing a pair of planar metal electrode pairs on the substrate by adopting a micro-nano processing technology;
the preparation method of the planar metal electrode pair comprises the following steps:
patterning photoresist, plating a metal film, and preparing a planar metal electrode pair by adopting a lift-off process;
the method for patterning the photoresist comprises the following steps:
spin-coating photoresist on the substrate, baking for curing, exposing the photoresist by using a laser direct-writing ultraviolet lithography technology, developing and fixing;
the metal thin film includes: sputtering and growing 10 nm titanium as an adhesion layer by using a magnetron sputtering coating machine, and regrowing a 70 nm gold layer on the adhesion layer;
3) Preparing a vertical metal electrode pair on the sample obtained in the step 2) by using an ion beam assisted deposition technology through a helium ion microscope;
the electrode material of the vertical metal electrode pair is platinum;
the shape of the electrode of the vertical metal electrode pair is a vertical rectangle;
two electrodes of the vertical metal electrode pair are arranged in parallel and communicated with the planar metal electrode pair obtained in the step 2);
4) Injecting high-energy helium ions (the ion energy of the high-energy helium ions is 30 keV) into micro areas beside the vertical metal electrode pair obtained in the step 3) through a helium ion microscope, wherein the number of the micro areas is two, one micro area is arranged beside each vertical metal electrode, each micro area is a rectangular area with the width of 100 nm and the length of 400 nm, and the micro areas generate surface deformation swelling due to helium ion enrichment, extrude the vertical metal electrodes and enable the vertical metal electrodes to topple over, so that the gap distance between the two vertical metal electrodes is regulated to be 8 nm, and the electrode pair with the nanometer gap is obtained.
Fig. 2 is an SEM image of an electrode pair having a nanogap, prepared in example 1 of the invention.
The electrical properties of the pair of electrodes having the nanogap were measured using a semiconductor parameter analyzer, and the results are shown in FIG. 3. FIG. 3 is a graph showing the electrical properties of the electrode pair having a nanogap prepared in example 1, wherein a in FIG. 3 is an IV curve of the electrode pair under a DC bias of 0 to 10V, and b in FIG. 3 is a Fowler-Nordheim (F-N) curve of the electrode pair. It can be seen from FIG. 3 that the current increases exponentially with the voltage increase at a voltage above 7V, and the F-N curve shows a linear trend above 7V, both reflecting the electron tunneling effect in the nanogap structure at high voltage, and the field emission current is dominant.
Example 2
1) Growing a silicon dioxide insulating layer on a monocrystalline silicon substrate by adopting a thermal oxidation method to obtain a base material; the thickness of the silicon dioxide insulating layer is 130 nm;
2) Preparing a pair of planar metal electrode pairs on the substrate by adopting a micro-nano processing technology;
the preparation method of the planar metal electrode pair comprises the following steps:
patterning photoresist, plating a metal film, and preparing a planar metal electrode pair by adopting a lift-off process;
the method for patterning the photoresist comprises the following steps:
spin-coating photoresist on the substrate, baking for curing, exposing the photoresist by using a laser direct-writing ultraviolet lithography technology, developing and fixing;
the metal thin film includes: sputtering and growing 10 nm titanium serving as an adhesion layer by using a magnetron sputtering coating machine, and growing a 70 nm gold layer on the adhesion layer;
3) Preparing a vertical metal electrode pair on the sample obtained in the step 2) by using an ion beam assisted deposition technology through a helium ion microscope;
the electrode material of the vertical metal electrode pair is platinum;
the electrodes of the vertical metal electrode pair are in a vertical rectangular electrode shape and a vertical triangular electrode shape, and the two electrodes of the vertical metal electrode pair are arranged in parallel and communicated with the planar metal electrode pair obtained in the step 2);
4) Implanting high-energy helium ions (the ion energy of the high-energy helium ions is 20 keV) into micro areas beside the vertical metal electrode pair obtained in the step 3) through a helium ion microscope, wherein the number of the micro areas is one, and the micro areas are beside the vertical triangular electrode; the micro-area is a rectangular area with the width of 200 nm and the length of 500 nm, and the surface of the micro-area deforms and bulges due to helium ion enrichment, so that the triangular electrode is inclined towards the rectangular electrode, the gap distance between the two vertical metal electrodes is adjusted to be 21 nm, and the electrode pair with the nanometer gap is obtained.
Fig. 4 is an oblique view angle imaging SEM image of the nanogap-equipped electrode pair prepared in example 2 of the invention.
The electrical properties of the pair of electrodes having the nanogap were measured using a semiconductor parameter analyzer, and the results are shown in FIG. 5. Fig. 5 is a graph showing the electrical characteristics of the pair of electrodes having a nanogap, prepared in example 2 of the invention. As can be seen from fig. 5, the I-V curve of the nanogap-equipped electrode pair prepared in example 2 was maintained to be stable and consistent after the voltage current was repeatedly applied for a plurality of times. The morphology of the pair of electrodes having a nanogap after the electrical measurement was observed for a plurality of times, and the result is shown in fig. 6. FIG. 6 is a top-down imaging SEM photograph of an electrode pair with a nanogap, prepared in example 2 of the invention. As can be seen from fig. 6, the morphology of the pair of electrodes having the nanogap after the electrical measurement was performed a plurality of times was not significantly changed from that before the measurement. The nano-gap electrode prepared by the invention has stable and reliable structure and can be subjected to repeated electrical measurement below the electric field strength of 108V/m.
Example 3
1) Growing a silicon dioxide insulating layer on a monocrystalline silicon substrate by adopting a thermal oxidation method to obtain a base material; the thickness of the silicon dioxide insulating layer is 150 nm;
2) Preparing a pair of planar metal electrode pairs on the substrate by adopting a micro-nano processing technology;
the preparation method of the planar metal electrode pair comprises the following steps:
patterning photoresist, plating a metal film, and preparing a planar metal electrode pair by adopting a lift-off process;
the method for patterning the photoresist comprises the following steps:
spin-coating photoresist on the substrate, baking for curing, exposing the photoresist by using a laser direct-writing ultraviolet lithography technology, developing and fixing;
the metal thin film includes: sputtering and growing 5 nm of chromium as an adhesion layer by using a magnetron sputtering coating machine, and regrowing a 50 nm gold layer on the adhesion layer;
3) Preparing a vertical metal electrode pair on the sample obtained in the step 2) by using an ion beam assisted deposition technology through a helium ion microscope;
the electrode material of the vertical metal electrode pair is platinum;
the electrodes of the vertical metal electrode pair are in a vertical rectangular electrode shape and a vertical triangular electrode shape, and the two electrodes of the vertical metal electrode pair are arranged in parallel and communicated with the planar metal electrode pair obtained in the step 2);
4) Injecting high-energy helium ions (the ion energy of the high-energy helium ions is 20 keV) into micro areas beside the vertical metal electrode pair obtained in the step 3) through a helium ion microscope, wherein the number of the micro areas is two, one micro area is arranged beside each vertical metal electrode, each micro area is a rectangular area with the width of 100 nm and the length of 200 nm, and the micro areas generate surface deformation swelling due to helium ion enrichment, extrude the vertical metal electrodes and enable the vertical metal electrodes to topple over, so that the gap distance between the two vertical metal electrodes is regulated to be 35 nm, and the electrode pair with the nanometer gap is obtained.
Fig. 7 is an oblique-view imaging SEM image of the nanogap-equipped electrode pair prepared in example 3 of the invention.
The electrical properties of the pair of electrodes having the nanogap were measured using a semiconductor parameter analyzer, and the results are shown in fig. 8. Fig. 8 is a graph showing electrical properties of an electrode pair with a nanogap prepared in example 3 of the present invention, wherein a graph a of fig. 8 shows an I-V curve of the electrode pair with a nanogap prepared in example 3 of the present invention, and a graph b of fig. 8 shows an F-N curve of the electrode pair with a nanogap prepared in example 3 of the present invention. As can be seen from fig. 8, the I-V curve of the electrode pair with nanogap prepared in example 3 of the present invention increases exponentially above 18V, and the F-N curve is linear above 18V, both reflecting the occurrence of electron tunneling effect in the nanogap structure at high voltage, the turn-on voltage of the structure is 18V.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (11)
1. A method for preparing an electrode pair having a nanogap, comprising the steps of:
a) Growing an insulating layer on a monocrystalline silicon substrate to obtain a base material;
b) Preparing a planar metal electrode pair on the substrate by adopting a micro-nano processing technology;
c) Preparing a vertical metal electrode pair on the sample obtained in the step B) by adopting an ion beam/electron beam assisted deposition technology, and communicating the vertical metal electrode pair with the planar metal electrode pair obtained in the step B);
d) And C), injecting high-energy helium ions into a micro area beside the vertical metal electrode pair obtained in the step C), wherein the micro area generates surface deformation and swelling due to helium ion enrichment, extruding the vertical metal electrode, and enabling the vertical metal electrode to tilt, so that the gap distance between the two vertical metal electrodes is regulated and controlled, and the electrode pair with the nanometer gap is obtained.
2. The method according to claim 1, wherein in step A), the insulating layer is made of silicon dioxide, silicon nitride, aluminum oxide, hafnium oxide, titanium oxide, polystyrene, PMMA, or photoresist.
3. The method according to claim 2, wherein the photoresist is SU-8.
4. The method according to claim 1, wherein the step a) comprises growing the insulating layer by thermal oxidation, LPCVD, PECVD, ALD or physical vapor deposition.
5. The production method according to claim 1, wherein in the step A), the thickness of the insulating layer is 130 to 200 nm.
6. The method for preparing a planar metal electrode pair according to claim 1, wherein the method for preparing a planar metal electrode pair in step B) comprises the steps of:
patterning photoresist, plating a metal film, and preparing a planar metal electrode pair by adopting a lift-off process;
or plating a metal film, patterning photoresist, and preparing a planar metal electrode pair by adopting a metal etching process;
or plating a metal film first and then performing focused ion beam etching to prepare the planar metal electrode pair.
7. The method according to claim 6, wherein the photoresist is patterned by UV lithography or electron beam lithography;
the equipment for plating the metal film is an electron beam evaporation coating machine, a magnetron sputtering coating machine or a thermal evaporation coating machine;
the electrode material of the planar metal electrode pair includes at least one of gold, platinum, silver, copper, chromium, palladium, nickel, iron, titanium, and tungsten.
8. The method according to claim 1, wherein in step C), the ion beam/electron beam assisted deposition technique employs equipment selected from the group consisting of a focused ion beam system, a helium ion microscope, a SEM, and an EBL;
the electrode material of the vertical metal electrode pair is gold, platinum, silver, copper, chromium, palladium, nickel, iron, titanium or tungsten;
the shape of the electrode of the vertical metal electrode pair is a vertical rectangle, a rhombus, a triangle, a columnar body, a circular truncated cone, a prismatic table, a cone or an irregular sheet structure.
9. The method according to claim 1, wherein in step D), the apparatus for implanting the high-energy helium ions is a focused ion beam apparatus;
the shape of the micro-area is rectangular, circular or irregular.
10. The method according to claim 1, wherein in step D), the ion energy of the energetic helium ions is 20 to 30 keV;
the gap distance is 8 to 35 nm.
11. An electrode pair having a nanogap, which is produced by the production method according to any one of claims 1 to 10.
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| JP2011127222A (en) * | 2010-12-13 | 2011-06-30 | National Institute Of Advanced Industrial Science & Technology | Manufacturing method of nano-gap electrode |
| CN102765696A (en) * | 2011-05-03 | 2012-11-07 | 中国科学院物理研究所 | Method for manufacturing three-dimensional superconduction micro-nano device |
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| JP2011127222A (en) * | 2010-12-13 | 2011-06-30 | National Institute Of Advanced Industrial Science & Technology | Manufacturing method of nano-gap electrode |
| CN102765696A (en) * | 2011-05-03 | 2012-11-07 | 中国科学院物理研究所 | Method for manufacturing three-dimensional superconduction micro-nano device |
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