CN115636389B - Single-molecule junction preparation method and application based on controllable nano-gap of piezoelectric sheet - Google Patents
Single-molecule junction preparation method and application based on controllable nano-gap of piezoelectric sheet Download PDFInfo
- Publication number
- CN115636389B CN115636389B CN202211262272.XA CN202211262272A CN115636389B CN 115636389 B CN115636389 B CN 115636389B CN 202211262272 A CN202211262272 A CN 202211262272A CN 115636389 B CN115636389 B CN 115636389B
- Authority
- CN
- China
- Prior art keywords
- gold wire
- piezoelectric
- piezoelectric sheet
- gold
- controllable
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Micromachines (AREA)
Abstract
The invention discloses a preparation method of a single-molecule junction based on a controllable nano gap of a piezoelectric sheet, which comprises the following steps: the piezoelectric sheet, the driving electrode, the insulating layer and the gold wire with the pre-circular cutting; the piezoelectric sheet is a substrate/substrate; the upper and lower surfaces of the piezoelectric sheet are provided with driving electrodes; the insulating layer is positioned on the upper layer of the driving electrode; the gold wire with the pre-circular cutting is fixed on the insulating layer; when a driving voltage is applied to the driving electrode, the piezoelectric sheet is deformed transversely/horizontally, and the gold wires fixed on the insulating layer are correspondingly stretched, so that the size of the nanogap is precisely controlled. The invention constructs an in-situ adjustable on-chip metal nano gap with angstrom-level adjustment precision by using a piezoelectric sheet expanding in the horizontal direction, and further develops the in-plane controllable crack; technical support is provided for manufacturing on-chip devices with integration potential by taking single molecules as building blocks.
Description
Technical Field
The invention belongs to the technical field of nano electrodes, and particularly relates to a preparation method of a single-molecule junction based on a controllable nano gap of a piezoelectric sheet.
Background
As semiconductor process feature sizes shrink below ten nanometers, leakage currents between electrodes caused by tunneling effects will become a key technical challenge that limits further miniaturization of devices. The molecule has the advantages of low synthesis cost, structural diversity, self-assembly and the like, and the construction of a molecular device with a special function by utilizing the characteristics of a single molecule becomes a research hotspot of current molecular electronics. One prerequisite for the realization of a single molecule functional device is the ability to connect microscopic molecules into macroscopic circuits to measure and control charge transport through the molecules, thus making molecular junctions of electrode-molecule-electrode structures a prime task.
The key to constructing a single-molecule junction is to connect the electrode and the molecule stably and efficiently through chemical bonds. Typically, the electrodes of the unimolecular junction are primarily metal-acting, forming a metal-unimolecular-metal junction. The processing process of the metal dot electrode is complicated, and it is difficult to precisely control the morphology of the electrode and the number of measured molecules.
The main methods for obtaining the single-molecule junction at present are a mechanically controllable cleavage technology, a scanning probe microscopy technology, an electrochemical deposition technology of a nano gap electrode and an electromigration technology. However, in these methods, the mechanically controllable cleaving technology can provide a continuously adjustable nanogap between the needle-shaped electrodes with high mechanical stability, but the mechanically controllable cleaving technology device needs to change the distance between the electrodes by bending the substrate with the aid of piezoelectric ceramics or stepper motors, and on-chip integration cannot be achieved.
Therefore, how to provide a single molecular junction preparation method of on-chip controllable nano-cleavage is a problem that needs to be solved by those skilled in the art.
Disclosure of Invention
In view of the above, the invention provides a method for preparing a single molecular junction based on a controllable nanogap of a piezoelectric sheet, which is characterized in that an in-situ adjustable on-chip metal nanogap with angstrom-level modulation resolution is constructed by using a horizontal expandable piezoelectric sheet, and further develops into in-plane fracture and connection, wherein the nanogap can be repeatedly fractured and connected for millions times, so that on-chip fracture with freely adjustable gap size is realized; the fabrication of high-yield on-chip molecular devices with integration potential using single molecules as building blocks provides technical support.
In order to achieve the above purpose, the invention adopts the following technical scheme:
a single-sheet junction preparation method based on a controllable nano-gap of a piezoelectric sheet comprises the following steps: the piezoelectric sheet, the driving electrode, the insulating layer and the gold wire with the pre-circular cutting;
wherein the piezoelectric sheet is a substrate; the upper surface and the lower surface of the piezoelectric sheet are respectively provided with a driving electrode;
the insulating layer is positioned on the upper layer of the driving electrode; the gold wire with the pre-circular cutting is fixed on the insulating layer;
when a driving voltage is applied to the driving electrode, the piezoelectric sheet sandwiched between the driving electrodes is deformed laterally/horizontally, and the gold wires fixed on the insulating layer are correspondingly stretched, thereby precisely controlling the size of the nanogap.
Preferably, the preparation method of the gold wire with the pre-circular cutting comprises the following steps:
1) Performing circular cutting on the middle part of the first gold thread to form a groove, and cutting the first gold thread into a relatively symmetrical hourglass shape;
2) Fixing the gold thread I treated in the step 1) on a piezoelectric sheet coated with insulating glue;
3) Placing a second gold wire on the upper layer of the piezoelectric sheet, and placing one end of the second gold wire close to the center of the groove of the first gold wire;
4) Dropping an electrolyte on the piezoelectric substrate near the grooves to submerge the end positions of the gold wires II and the groove parts of the gold wires I;
5) Applying a low potential on the gold wire II to enable the gold wire II to serve as a cathode of an electrochemical reaction, and applying a high potential on the gold wire I to enable the gold wire II to serve as an anode, and etching through the electrochemical reaction; the diameter of the grooves decreases as the anode gradually erodes.
Preferably, the diameter of the groove after circular cutting in the step 1) is 10-15 mu m; and the diameter of the groove is reduced to be less than or equal to 1 mu m after the chemical corrosion in the step 5).
And/or, the piezoelectric substrate in the step 2) is a piezoelectric ceramic substrate; the first gold wire is fixed on the piezoelectric substrate through epoxy resin;
and/or, step 4) the electrolyte is an aqueous solution containing 0.01 mol/ml chloroauric acid and 1:1 boron chloride.
Preferably, the piezoelectric sheet is a rectangular piezoelectric ceramic sheet polarized longitudinally.
Preferably, the driving electrode is a silver film, and the silver film is respectively plated on the upper surface and the lower surface of the piezoelectric sheet.
Preferably, the gold wire is fixed on the insulating layer by bonding.
Preferably, the tensile breaking process of the gold wire is monitored by measuring the current passing through the gold wire by a current signal analyzer.
Preferably, when the driving voltage is increased, the groove portion of the gold wire is subjected to tension, and the cross section of the groove is reduced until it breaks, forming a nanogap.
Preferably, the minimum diameter of the gold wire groove part is 1% of the initial diameter, the length of the suspension part is twice of the initial diameter, the total stretching length of the nanobridge is 0.1% of the length of the suspension part, and the maximum strain force is generated at the thinnest part of the groove.
The invention further aims to provide an application of preparing a single-molecule junction based on the piezoelectric patch controllable nano-cleavage junction; the application of the single-molecule junction obtained by the preparation method based on the piezoelectric patch controllable nano-split junction in the aspect of preparing a molecular split junction array.
Compared with the prior art, the invention has at least the following technical effects:
1) The invention considers the requirements of in-plane integration and adjustable gap, and provides a method for realizing on-chip adjustable nano gap by a piezoelectric sheet capable of expanding transversely;
2) In principle, thousands of parallel electrode pairs can be manufactured on a substrate, and technical support is provided for manufacturing a molecular junction array;
3) According to the scheme, the separation distance of each pair of electrodes can be independently adjusted by changing the initial relative position of the electrode pair, so that the gap size modulation precision and the total gap size change range can be finely adjusted according to the actual application requirements;
4) The gap on the chip can be tuned and maintained at sub-nanometer resolution, providing applications in extreme optics, such as tip-enhanced raman spectroscopy, localized surface plasmons.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for the description of the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic diagram of the operation of embodiment 1 of the present invention based on a controllable nanogap for a piezoelectric sheet.
FIG. 2 is a scanning electron microscope image of example 2 of the present invention with different electrode pitches at different driving voltages.
Fig. 3 is a schematic diagram of an electron beam lithography-based tunable on-chip nanogap according to embodiment 3 of the invention.
Detailed Description
The following description of the technical solutions in the embodiments of the present invention will be clear and complete, and it is obvious that the described embodiments are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Example 1
The embodiment provides a single-sub junction preparation method based on a controllable nano gap of a piezoelectric sheet, which comprises the following steps: the piezoelectric sheet, the driving electrode, the insulating layer and the gold wire with the pre-circular cutting;
wherein the piezoelectric sheet is a substrate/substrate; the upper and lower surfaces of the piezoelectric sheet are provided with driving electrodes;
the insulating layer is positioned on the upper layer of the driving electrode; the gold wire with the pre-circular cutting is fixed on the insulating layer;
when a driving voltage is applied to the driving electrode, the piezoelectric sheet sandwiched between the driving electrodes deforms laterally/horizontally, and the gold wires fixed on the insulating layer are correspondingly stretched, so that the size of the nanogap is precisely controlled.
In order to further optimize the technical scheme, the preparation method of the gold wire with the pre-circular cutting comprises the following steps:
1) Performing circular cutting on the middle part of the first gold thread, and cutting the first gold thread into a relatively symmetrical hourglass shape;
2) Fixing the gold wire I treated in the step 1) on an insulated piezoelectric sheet;
3) Placing a second gold wire on the upper layer of the piezoelectric sheet, and placing one end of the second gold wire in the center of the groove close to the first gold wire;
4) Dropping an electrolyte on the piezoelectric sheet near the groove to submerge the end position of the gold wire II and the groove part of the gold wire I;
5) Applying a low potential on the gold wire II to enable the gold wire II to serve as a cathode of an electrochemical reaction, applying a high potential on the gold wire I to enable the gold wire I to serve as an anode, and etching through the electrochemical reaction; as the anode gradually erodes, the diameter of the groove decreases.
In order to further optimize the technical scheme, the diameter of the groove after circular cutting in the step 1) is 10-15 mu m;
and/or, the piezoelectric sheet in the step 2) is a piezoelectric ceramic sheet; the gold thread I is fixed on the piezoelectric sheet through epoxy resin;
and/or, the electrolyte in the step 4) is an aqueous solution containing 0.01 mol/ml chloroauric acid and 1:1 boron chloride.
In order to further optimize the technical scheme, the piezoelectric plate is a rectangular piezoelectric ceramic plate polarized longitudinally.
In order to further optimize the technical scheme, the driving electrode is a silver film, and the silver films are respectively plated on the upper surface and the lower surface of the piezoelectric sheet.
In order to further optimize the technical scheme, the gold wires are fixed on the insulating layer in a bonding mode.
In order to further optimize the technical scheme, the current passing through the gold wire is measured and monitored through a current signal analyzer in the tensile breaking process of the gold wire.
In order to further optimize the technical scheme, when the driving voltage is increased, the groove part of the gold wire is stressed, the cross section of the groove is reduced until the groove breaks, and a nano gap is formed.
In order to further optimize the technical scheme, the minimum diameter of the gold thread groove part is 1% of the initial diameter, the length of the suspension part is twice of the initial diameter, the total stretching length of the nanobridge is 0.1% of the length of the suspension part, and the maximum strain force is generated at the thinnest part of the groove.
Further, gold wireThe initial diameter of the groove is 100 μm, the minimum diameter of the groove is less than or equal to 1 μm, the length of the suspended part is 200 μm, the total stretching length of the nanobridge is 200nm, the maximum strain force is generated at the thinnest part of the groove, and the maximum strain force is 1.35 multiplied by 10 10 N/m 2 。
Figure 1 is a schematic diagram of the operation of a controllable nanogap based on a piezoelectric sheet.
Wherein a is the working principle of the on-chip cleavage technology; a longitudinally polarized piezoelectric ceramic is used as the substrate. When a driving voltage (V d ) And then the gold wires above the gold wires are stretched and fixed to generate separated electrode pairs. The elongation degree of the gold wire is monitored by observing the current at both ends of the gold wire.
And b, the enlarged area of the gold wire of the suspended part is shown in the drawing, the gold wire with the groove is fixed on the substrate through two drops of black glue, and the initial interval distance is d. The groove portions will be elongated until the underlying substrate eventually breaks upon reaching a certain lateral deformation.
Figure c is a stress distribution around the simulated groove portion of the gold wire when it is stretched, specifically the stress distribution when the gold wire is stretched using the COMSOL software package.
And d, the etching process schematic diagram for reducing the diameter of the gold wire of the groove part.
Example 2
This example is based on example 1 by further verifying:
the ability to control the accuracy of gap size modulation is very important for building molecular devices. The embodiment adopts a 16-bit voltage output module (0V-10V) to control the voltage applied to the piezoelectric plate, namely the transverse deformation of the piezoelectric ceramic plate. The voltage is amplified by a linear amplifier and applied to the piezoelectric sheet to produce a transverse tensile deformation. The deformation of the piezoelectric ceramic is linearly proportional to the applied driving voltage, and is measured at the maximum driving voltage (V max ) The maximum lateral deformation is 0.1% of the total length (L) of the piezoelectric sheet. At the applied driving voltage (V d ) Next, the elongation (Δd) of the line between the two black glue fixed gold line points (d) can be estimated as:
Δd＝(L×0.1％)×(V d /V max )×(d/L)＝V d /V max ×0.1％×d (1)
then the applied drive voltage (V min ) Is 1mV determined by the output module, so the minimum/maximum elongation of the line can be calculated as:
Δd min ＝V min /V max ×0.1％×d＝1mV/10V×0.1％×d＝10 -7 ×d (2)
Δd max ＝V max /V max ×0.1％×d＝10 -3 ×d (3)
as can be seen in fig. 2: scanning electron microscope images of gold electrode pairs with different pitches under different driving voltages.
Wherein, a-c are SEM images of electrode separation when driving voltages of 1V, 4V and 10V are applied in the coarse adjustment mode, and gap sizes of about 0.4 μm,2.4 μm and 5.2 μm are obtained, respectively. Scale bar 2 μm. Arrows indicate the direction of increase in gap size. At this time, the initial distance d between the two jeans fixing the gold wires is about 8 mm.
The d-f plot shows that in fine tuning mode, gap sizes of about 82nm, 124nm, and 232nm are obtained when drive voltages of 1V, 4V, and 10V are applied, respectively. Scale bar 200nm.
Based on equation (2), the minimum step size (Δd of electrode separation min ) Linearly dependent on the initial distance (d) between the two fixed points, which provides adjustable accuracy for gap size control.
In the fine mode, the gold wire is fixed by two drops of black glue (for example, d is about 1 mm) with a relatively short distance, and Δd can be obtained according to the formula (2) min ＝10 -7 The x d is approximately equal to 0.1nm, that is to say, the gap size can be accurately regulated with sub-nanometer precision. In the coarse tuning mode, the gold wire is fixed by two drops of black glue (for example, d is about 10 mm) which are far apart, and Δd can be obtained according to the formula (3) max ＝10 -3 X d ≡ 10 μm, that is, we can obtain a micrometer-scale gap variation range.
Example 3
This example is based on examples 1-2 to make an electrode array
Examples 1-2 demonstrate that the fixation of metal electrodes on piezoelectric ceramics can achieve gap sizes from sub-nanometer to micrometer with adjustable control accuracy.
However, generating thousands of such electrode arrays remains a significant challenge, which is essential to achieving highly integrated functional devices. To fabricate the electrode array, example 3 fabricated nanoscale metal bridges on a piezoelectric ceramic wafer using photolithographic techniques. With the voltage (V) applied to the piezoelectric ceramic sheet, i.e d ) The nanobridge immobilized on the substrate will be elongated up to the final break, as shown in fig. 3 a.
To make the samples, a poly (pyromellitic dianhydride-co-4, 4' -oxydianiline) amic acid (PAA) solution was first spin coated on top of the piezoelectric ceramic top electrode, which may electrically insulate the gold nanostructures from the piezoelectric ceramic, followed by a heat treatment to cure the insulation layer. Next, suspended nanobridges (d-2 μm) with symmetrical grooves (about 80nm wide and about 40nm thick) were obtained on the insulating layer using standard photolithography and reactive ion etching techniques, as shown in fig. 3 b. Fig. 3c-3e show magnified SEM images of groove location at different drive voltages. It shows that when no driving voltage is applied, an unstretched nanobridge on the insulating layer can be observed (fig. 3 c). When a driving voltage of 5V was applied to the piezoelectric sheet, nanobridge breakage and a gap of about 25nm in size were observed (fig. 3 d). When the driving voltage is increased to 10V, the gap size is enlarged to about 42nm.
Figure 3a is based on the principle of operation of an electron beam lithography tunable on-chip nanogap.
Fig. 3b is an SEM image of the sample, scale bar: 2 μm.
FIG. 3c suspended nanobridges on top of the substrate without driving voltage (V b =0v), scale bar 200nm.
FIG. 3d nanobridge is stretched when the driving voltage (V b =5v) was applied on the underlying piezoelectric substrate, a nanogap (-25 nm), scale bar: 200nm.
FIG. 3e shows that the nanogap increases to-42 nm when a driving voltage (10V) is applied. Scale bar: 200nm.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (8)
1. The method for preparing the single-element junction based on the controllable nano gap of the piezoelectric sheet is characterized by comprising the following steps of: the piezoelectric sheet, the driving electrode, the insulating layer and the gold wire with the pre-circular cutting;
wherein the piezoelectric sheet is a substrate; the upper surface and the lower surface of the piezoelectric sheet are respectively provided with a driving electrode;
the insulating layer is positioned on the upper layer of the driving electrode; the gold wire with the pre-circular cutting is fixed on the insulating layer;
when a driving voltage is applied to the driving electrode, the piezoelectric sheet clamped in the middle of the driving electrode is transversely/horizontally deformed, and the gold wires fixed on the insulating layer are correspondingly stretched, so that the size of the nano gap is accurately controlled; wherein, the nano gap is formed by mechanically stretching the piezoelectric substrate to transversely/horizontally deform so as to break the gold thread fixed on the surface of the piezoelectric substrate to form a controllable split joint;
the preparation method of the gold wire with the pre-circular cutting comprises the following steps:
1) Performing circular cutting on the middle part of the first gold thread to form a groove, and cutting the first gold thread into a relatively symmetrical hourglass shape;
2) Fixing the gold wire I treated in the step 1) on a piezoelectric substrate coated with insulating glue;
3) Placing a second gold wire on the upper layer of the piezoelectric substrate, and placing one end of the second gold wire close to the center of the groove of the first gold wire;
4) Dropping an electrolyte on the piezoelectric substrate near the grooves to submerge the end positions of the gold wires II and the groove parts of the gold wires I;
5) Applying a low potential on the gold wire II to enable the gold wire II to serve as a cathode of an electrochemical reaction, and applying a high potential on the gold wire I to enable the gold wire II to serve as an anode, and etching through the electrochemical reaction; the diameter of the grooves decreases as the anode gradually erodes.
2. The method for preparing a single-molecule junction based on controllable nanogap for a piezoelectric sheet according to claim 1, wherein the diameter of the groove after circular cutting in step 1) is 10-15 μm; and the diameter of the groove is reduced to be less than or equal to 1 mu m through the step 5);
and/or, the piezoelectric substrate in the step 2) is a piezoelectric ceramic substrate; the first gold wire is fixed on the piezoelectric substrate through epoxy resin;
and/or, step 4) the electrolyte is a 1:1 aqueous solution of chloroauric acid and boron chloride in an amount of 0.01 mole per milliliter.
3. The method for preparing a single-molecule junction based on controllable nanogap for a piezoelectric sheet according to claim 1, wherein the piezoelectric sheet is a rectangular piezoelectric ceramic sheet polarized in a longitudinal direction.
4. The method for preparing a single-molecule junction based on controllable nanogap for a piezoelectric sheet according to claim 1, wherein the driving electrode is a silver film, and the silver films are respectively plated on the upper and lower surfaces of the piezoelectric sheet.
5. The method for preparing a single-molecule junction based on controllable nanogap for a piezoelectric according to claim 1, wherein the gold wire is fixed on the insulating layer by means of adhesion.
6. The method for preparing a single-molecule junction based on controllable nanogap for a piezoelectric sheet according to claim 1, wherein the current passing through the gold wire is measured and monitored by a current signal analyzer during the tensile breaking of the gold wire.
7. The method of fabricating a single molecular junction based on controllable nanogap for a piezoelectric according to claim 6, wherein when the driving voltage is increased, the groove portion of the gold wire is under tension, and the cross section of the groove is reduced until it breaks, forming the nanogap.
8. The method of fabricating a single-molecule junction based on controllable nanogap for a piezoelectric according to claim 7, wherein the minimum diameter of the groove portion of the gold wire is 1% of the initial diameter, the length of the suspended portion is twice of the initial diameter, the total stretching length of the nanobridge is 0.1% of the length of the suspended portion, and the maximum strain force is generated at the finest portion of the groove.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211262272.XA CN115636389B (en) | 2022-10-14 | 2022-10-14 | Single-molecule junction preparation method and application based on controllable nano-gap of piezoelectric sheet |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211262272.XA CN115636389B (en) | 2022-10-14 | 2022-10-14 | Single-molecule junction preparation method and application based on controllable nano-gap of piezoelectric sheet |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN115636389A CN115636389A (en) | 2023-01-24 |
| CN115636389B true CN115636389B (en) | 2023-07-21 |
Family
ID=84944980
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211262272.XA Active CN115636389B (en) | 2022-10-14 | 2022-10-14 | Single-molecule junction preparation method and application based on controllable nano-gap of piezoelectric sheet |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115636389B (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022055604A2 (en) * | 2020-07-08 | 2022-03-17 | Quan Qing | Methods to construct sharp and stable tip contacts with nanometer precision in a confined nanoscale space between two microfluidic chambers |
| CN115132578A (en) * | 2022-09-01 | 2022-09-30 | 中国科学技术大学 | Electrode pair with nanogap and preparation method thereof |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5751156A (en) * | 1995-06-07 | 1998-05-12 | Yale University | Mechanically controllable break transducer |
| CN1588626A (en) * | 2004-10-14 | 2005-03-02 | 中国科学技术大学 | Method for preparing adjustable partition nano electrode |
| CN102903848B (en) * | 2012-10-24 | 2015-02-18 | 东北大学 | Preparation method of addressable nano molecular junction |
| WO2017102852A1 (en) * | 2015-12-14 | 2017-06-22 | Dubois Valentin | Crack structures, tunneling junctions using crack structures and methods of making same |
| WO2018025887A1 (en) * | 2016-08-02 | 2018-02-08 | Quantum Biosystems Inc. | Devices and methods for creation and calibration of a nanoelectrode pair |
| CN107265396A (en) * | 2017-05-13 | 2017-10-20 | 南开大学 | The single-layer graphene unimolecule knot preparation method of Mechanical controllable nano gap |
| US11757198B2 (en) * | 2019-02-26 | 2023-09-12 | University Of Florida Research Foundation, Inc. | Magnetoelectric nanowire based antennas |
| CN113548642A (en) * | 2021-07-21 | 2021-10-26 | 南开大学 | Preparation method of graphene nano electrode pair array with continuous and controllable gaps on chip |
| CN114335335A (en) * | 2021-12-09 | 2022-04-12 | 北京大学 | Method for adjusting gap distance in metal tunneling junction |
-
2022
- 2022-10-14 CN CN202211262272.XA patent/CN115636389B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022055604A2 (en) * | 2020-07-08 | 2022-03-17 | Quan Qing | Methods to construct sharp and stable tip contacts with nanometer precision in a confined nanoscale space between two microfluidic chambers |
| CN115132578A (en) * | 2022-09-01 | 2022-09-30 | 中国科学技术大学 | Electrode pair with nanogap and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN115636389A (en) | 2023-01-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20210239625A1 (en) | Crack structures, tunneling junctions using crack structures and methods of making same | |
| US8257566B2 (en) | Nanotube device and method of fabrication | |
| JP4213668B2 (en) | Molecular electronics and semiconductor device for biosensor device based on molecular electronics and manufacturing method thereof | |
| JP2008505044A (en) | Electronic devices based on carbon nanotubes produced by electrolytic deposition and their applications | |
| US20110167526A1 (en) | Microsprings Having Nanowire Tip Structures | |
| Zhao et al. | In situ adjustable nanogaps and in‐plane break junctions | |
| CN115636389B (en) | Single-molecule junction preparation method and application based on controllable nano-gap of piezoelectric sheet | |
| CN105759130A (en) | Measurement device and measurement method for piezoelectric coefficient d33 of nanowire | |
| KR100905405B1 (en) | Measuring Apparatus and Method of Nano-wire Physical Properties | |
| CN103558368B (en) | A kind of biological cell feature measurement nano electrode array structure and manufacture method thereof | |
| Balavalad | A Review on Silicon Nanowires and their use in the Development of Nano Piezoresistive Pressure Sensors | |
| US20100104735A1 (en) | Method for manufacturing a one-dimensional nano-structure-based device | |
| CN113237733A (en) | In-situ force thermoelectric multi-field coupling test chip and preparation method thereof | |
| JPH06194157A (en) | Positioning control method, facing method, tunneling microscope using it, and recording/reproducing device | |
| Gao et al. | Preparation and Application of Microelectrodes at the Single‐Molecule Scale | |
| JP2003292315A (en) | Production of carbon nanotube | |
| CN116143064A (en) | Integrated on-chip cracking system and measuring method thereof | |
| Zheng et al. | Tunable assembly of superfine single-walled carbon nanotube fibers | |
| CN115980131B (en) | Flexible material-based planar mechanical controllable cracking method | |
| CN113277463B (en) | In-situ mechanical testing chip based on network loading structure and preparation method | |
| Zhang | A nano-tensile testing system for studying nanostructures inside an electron microscope: design, characterization and application | |
| Wu et al. | In-plane fabrication of insulated gold-tip probes for electrochemical and force spectroscopy molecular experiments | |
| Wu et al. | In-plane fabricated insulated gold-tip probe for electrochemical and molecular experiments | |
| Chen et al. | Effect of Thin SiO 2 Layer on Silicon-on-Glass Anodic Bonding | |
| JPH09159677A (en) | Cantilever chip |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |