CN101216521A - Scanning electron microscope in situ electric measuring apparatus - Google Patents
Scanning electron microscope in situ electric measuring apparatus Download PDFInfo
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- CN101216521A CN101216521A CNA2008100564070A CN200810056407A CN101216521A CN 101216521 A CN101216521 A CN 101216521A CN A2008100564070 A CNA2008100564070 A CN A2008100564070A CN 200810056407 A CN200810056407 A CN 200810056407A CN 101216521 A CN101216521 A CN 101216521A
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Abstract
The invention relates to a device for electrical measurement of miniature elements in scanning electron microscope, in particular to an in-situ electrical measurement device of scanning an electron microscope, which belongs to the field of in-situ performance measurement of nanomaterials. The device comprises a support portion and a circuit portion, wherein the support portion is an insulation substrate (1); the circuit portion includes two electrodes (2) fixed on the insulation substrate (1), an element (4) to be measured and a phase-change material amorphous thin film (5); the phase-change material amorphous thin film (5) is uniformly distributed between the two metal electrodes; and the element to be measured is positioned in the phase-change material amorphous thin film or concentrated on the metal electrodes. The connection line of the invention has erasable characteristics, and the phase-change material can be non-crystallized completely by applying higher voltage on both ends of the electrodes or directly irradiating a grid with a certain laser pulse to eliminate current path that has been formed, thus achieving selectivity and erasing ability of measurement circuits.
Description
Technical field
The present invention relates to a kind of device that micrometer type element carries out electrical measurement of in scanning electron microscope, treating, be specially a kind of scanning electron microscope in situ electric measuring apparatus, belong to nano ZnO in site measurement field.
Background technology
Along with the development of nanometer technology and the exploitation of nano-device, nano wire or other tiny cells electric property and the field effect under outfield especially electric field action, will influence the reliability of device, therefore study nano wire or the electrical response and the military service behavior of tiny cells under electric field action, accumulating its electric property data, is the basic standard of current design and exploitation nano-device.At present, the main method of nano-scaled micro unit electric property in-situ test mainly is 1, based on focused ion beam FIB (focus iron beam) technology, depositing electrode is measured at the determinand two ends, but in a single day circuit is built, and the length of nano wire and electrode position all can not be changed between the electrode.2, utilize atomic force microscope directly needle point to be measured as electrode contact measured unit making alive, advantage is to measure accurately, and shortcoming is an original position real-time monitored ability, and can not measure the sample that is in the sample stage plane.
Scanning electron microscope is because easy to operate, the space, sample chamber is bigger, it is the strong instrument of research nanometer material structure and performance, but because nanometer material structure is tiny, be difficult to handle, do not use FIB to process, how directly in scanning electron microscope to-be-measured cell to be carried out electrical measurement, electric property and field effect that original position discloses to-be-measured cell are the difficult problems of current nanometer mechanics research.
Summary of the invention
The purpose of this invention is to provide a kind of tiny cells energising measurement mechanism that is installed in the scanning electron microscope, utilize electrical properties and the electric field state that bring out of scanning electron microscope original position real time record to-be-measured cell under electric field action to change.The electric property and the microstructure change of tiny cells directly are mapped, disclose the electric property of to-be-measured cell from nanoscale.
To achieve these goals, the present invention has taked following technical scheme.This device includes support section and circuit part, and described support section is a dielectric substrate 1, and described circuit part comprises two metal electrode 2, element under test 4 and the phase-change material noncrystal membranes 5 that are fixed on the dielectric substrate 1.Described phase-change material noncrystal membrane 5 is evenly distributed between two metal electrodes 2, and element under test 4 is arranged in phase-change material noncrystal membrane 5 or is integrated on the metal electrode 2;
Described phase-change material noncrystal membrane 5 can be crystal also resistivity reduction mutually from amorphous phase-change under electron beam or laser irradiation, is amorphous from crystalline transformation again under high voltage or electric pulse or laser radiation.
Described two metal electrodes 2 are rectangle and can pass through the lead external controllable voltage source.
Described element under test 3 is the element under test that people attempt to study, and comprises that nano wire or nanotube or nanosphere or microdevice etc. have the tiny cells of electrical properties.
Described dielectric substrate 1 is glass or jewel or the silicon chip that insulation course is arranged.
The present invention has following advantage:
1) the present invention has designed a kind of scanning electron microscope electrical measurement device based on phase-change material, because this device can directly be put under the scanning electron microscope and observe, realized that in scanning electron microscope original position carries out electrical measurement and in-situ observation to the to-be-measured cell of nanoscale, a kind of original position electrical testing method of new microdevice is provided, has dependable performance, easy for installation, characteristic of simple structure has been expanded the function of scanning electron microscope.
2) among the present invention the electrical measurement platform can conveniently prepare and the scanning electron microscope of packing in, can be implemented in the angular observation of original position energising time from the best.
3) components and parts to be measured have alternative, can carry out electron microscopy observation earlier, select wherein some to-be-measured cells, utilize electron beam to carry out building of circuit again, make electric current only by this unit, thereby realize selective measurement.If select several unit to connect simultaneously simultaneously, then realized measurement in parallel.
4) because the characteristics of phase-change material, line has erasable characteristics, add high voltage by the electrode two ends, perhaps directly carry out certain laser pulse irradiation to carrying net, make phase change material film decrystallized fully, the current path that has formed is disappeared realized the alternative of metering circuit, can erasable repeatedly property.
Description of drawings
Fig. 1 scanning electron microscope in situ electric measuring platform synoptic diagram
Among the figure: 1, dielectric substrate, 2, electrode, 3, be positioned on the film but the element under test that do not contact with metal electrode, 4, be integrated in the element under test on the electrode, 5, the phase-change material noncrystal membrane, 6, the crystalline portion of phase-change material noncrystal membrane.
Embodiment
The invention will be further described below in conjunction with Fig. 1:
Utilize scanning electron microscope can measure the electrical properties of micro element under the extra electric field condition, the structural change of real-time monitored micro element under the extra electric field condition, tiny cells electric property and micromechanism directly are mapped, disclose nano wire or microdevice electric property and conductive mechanism from the atom level.
Present embodiment is to microdevice electrical measurement platform.The electrical measurement platform comprises support section and circuit part.Support section is a dielectric substrate 1.Circuit part is two relative metal electrodes 2 and therebetween element under test 3,4 and phase change material film 5.Metal electrode and dielectric substrate are bonding, and phase-change material noncrystal membrane 5 is amorphous state and is evenly distributed between two metal electrodes 2 that element under test 3 is arranged in noncrystal membrane 5 and does not contact with metal electrode 2, and element under test 4 is integrated on one of them electrode.Two metal electrodes 2 are symmetrically distributed in dielectric substrate 1 center.Make the local crystallization of phase-change material noncrystal membrane on the platform by laser pulse irradiation, local electrical resistance reduces, thereby is communicated with the two ends of a certain to-be-measured cell.This electrical measurement platform is placed in the scanning electron microscope, by controlled added electric field annex to its extra electric field, electric field is directly acted on be connected the two ends of to-be-measured cell, utilize structure and morphology observation after scanning electron microscope is carried out the tiny cells energising simultaneously.
Dielectric substrate can glass, LaAlO good for insulating property, processing easily
3, aluminium oxide, jewel, the silicon chip of insulation course etc. is arranged, the dielectric substrate diameter is in 1CM, electrode 2 is the rectangle sheet metal of good conductivity, is symmetrically fixed on the dielectric substrate, and links to each other with external controllable electric power with metal wire.
Phase-change material is widely different common used material such as GST (Ge-Sb-Te), the SST (silicon antimony tellurium) of resistance before and after the phase transformation, when crystallization takes place when, relatively low because of two kinds of relatively very big crystallization part resistance of different materials electrical conductivity difference before and after the phase-change material phase transformation, electric current will preferentially pass through the crystallization zone when pressing thereby switch on.In the present embodiment, according to the material and the diameter of need to-be-measured cell, two electrodes be the rectangle width between 2mm～5mm, length is between 5mm～10mm, phase change material film thickness is 10-50nm, if too thick then be not easy by the electron beam-induced crystallization.
To-be-measured cell may be nano wire or microdevices such as nanosphere or nanotube, determines directly to place film or is integrated on a certain electrode according to whether making things convenient for, and can be connected with several device under tests, does not get final product but do not contact mutually.When utilizing laser pulse to bring out phase-change material noncrystal membrane crystallization, the irradiation diameter is determined by laser beam, because phase-change material can be an amorphous by crystalline transformation under the laser pulse of high voltage or certain parameter, after measuring end, phase change material film all can be converted into amorphous, thereby can utilize this character to reselect element under test, build current path, realize the erasable of nanoscale circuit.
The described power supply of present embodiment is the power supply voltage generator of raising speed rate program controlled, the linearity of well heater boost scope-50～+ 50V, according to the strain rate of setting, adjust compression rate.
The electrical measurement platform that assembles is placed on the scanning electron microscope sample platform of scanning electronic microscope together with power supply lead wire, set compression rate, to electrical measurement platform making alive, under the scanning electron microscope image formation state, observe the motion of drawing stand, home position observation is fixed on the distortion of the nano-device on the drawing stand, and writes down its electrical properties.
Treating micrometer type element in scanning electron microscope, to carry out the electrical testing concrete steps as follows:
1) element under test 3 is fixed on the phase-change material noncrystal membrane 5 of 2 of two metal electrodes, makes phase-change material noncrystal membrane 5 local crystallization on the platform by laser pulse irradiation, local electrical resistance reduces, thereby makes electric field directly act on the two ends of unit interested.
2) with metal wire two metal electrodes 2 are linked to each other with external controllable electric power, the scanning electron microscope in situ electric measuring platform is put into scanning electron microscope; Rotation by sample platform of scanning electronic microscope is tilted to the angle of easy observation with the device under test of connection circuit, to two metal electrode making alives;
3) rising along with voltage can obtain a series of electric current and voltage data by the voltage and current measurement end; By deformation process and the crystalline network situation of change of scanning electron microscope real-time in-situ record element under test 3 under electric field action; By element under test 3 current and voltage datas and microstructure change before and after the distortion are analyzed, can provide nanoscale element under test voltage-current curve and on the atom level, disclose the relation of nano material micromechanism and its conductive mechanism;
4) add high voltage by the electrode two ends, perhaps directly carry out certain laser pulse irradiation, make phase change material film decrystallized fully, the current path that has formed is disappeared, continue to reselect different element under test 3 and measure since 1 step to carrying net.
Claims (4)
1. original position electrical measurement device in the scanning electron microscope, its device characteristic is: include support section and circuit part, described support section is dielectric substrate (1), and described circuit part comprises electrode (2), element under test (4) and the phase-change material noncrystal membrane (5) that is fixed on the dielectric substrate (1); Described phase-change material noncrystal membrane (5) is evenly distributed between two metal electrodes (2), and element under test (4) is arranged in phase-change material noncrystal membrane (5) or is integrated on the metal electrode (2);
Described phase-change material noncrystal membrane (5) can be an amorphous from crystalline transformation again under high voltage or electric pulse or laser radiation from amorphous phase-change for crystal resistance reduces under electron beam or laser irradiation.
2. original position electrical measurement device in a kind of scanning electron microscope according to claim 1 is characterized in that: described two metal electrodes (2) are rectangle and can pass through the lead external controllable voltage source.
3. original position electrical measurement device in a kind of scanning electron microscope according to claim 3 is characterized in that: described element under test (4) is the microdevice of nano wire or nanosphere or nanotube or nano-scale.
4. according to original position electrical measurement device in claim 1 or claim 2 or the described a kind of scanning electron microscope of claim 3, it is characterized in that: described dielectric substrate (1) is glass or LaAlO
3Or aluminium oxide.
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| CN200810056407A CN100590440C (en) | 2008-01-18 | 2008-01-18 | Scanning electron microscope in situ electric measuring apparatus |
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| CN200810056407A CN100590440C (en) | 2008-01-18 | 2008-01-18 | Scanning electron microscope in situ electric measuring apparatus |
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| CN100590440C CN100590440C (en) | 2010-02-17 |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101776718B (en) * | 2009-12-25 | 2012-07-04 | 中国科学院上海微系统与信息技术研究所 | Method for fast representing phase-change materials and dielectric layers |
| CN101545872B (en) * | 2009-05-15 | 2012-08-22 | 北京工业大学 | Low-dimensional nano material microstructure and device and method for electrical performance testing |
| CN105140307A (en) * | 2015-08-06 | 2015-12-09 | 南京大学 | Nanomaterial in-situ photoelectric test chip of transmission electron microscope, chip fabrication method and application of chip |
| CN105136822A (en) * | 2015-08-06 | 2015-12-09 | 南京大学 | Nanometer material transmission electron microscope in-situ testing chip, preparation method and applications thereof |
| CN107275177A (en) * | 2017-06-12 | 2017-10-20 | 北京理工大学 | Detachable electric field arrangement for electronic streak electron microscope |
| CN107402333A (en) * | 2016-05-20 | 2017-11-28 | 清华大学 | The in-situ measurement device of carbon nano pipe array electrology characteristic |
-
2008
- 2008-01-18 CN CN200810056407A patent/CN100590440C/en not_active Expired - Fee Related
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101545872B (en) * | 2009-05-15 | 2012-08-22 | 北京工业大学 | Low-dimensional nano material microstructure and device and method for electrical performance testing |
| CN101776718B (en) * | 2009-12-25 | 2012-07-04 | 中国科学院上海微系统与信息技术研究所 | Method for fast representing phase-change materials and dielectric layers |
| CN105140307A (en) * | 2015-08-06 | 2015-12-09 | 南京大学 | Nanomaterial in-situ photoelectric test chip of transmission electron microscope, chip fabrication method and application of chip |
| CN105136822A (en) * | 2015-08-06 | 2015-12-09 | 南京大学 | Nanometer material transmission electron microscope in-situ testing chip, preparation method and applications thereof |
| CN105140307B (en) * | 2015-08-06 | 2017-04-26 | 南京大学 | Nanomaterial in-situ photoelectric test chip of transmission electron microscope, chip fabrication method and application of chip |
| CN105136822B (en) * | 2015-08-06 | 2018-03-06 | 南京大学 | A kind of nano material transmission electron microscope in-situ test chip, chip preparation method and its application |
| CN107402333A (en) * | 2016-05-20 | 2017-11-28 | 清华大学 | The in-situ measurement device of carbon nano pipe array electrology characteristic |
| CN107402333B (en) * | 2016-05-20 | 2020-07-10 | 清华大学 | In-situ measuring device for electrical characteristics of carbon nanotube array |
| CN107275177A (en) * | 2017-06-12 | 2017-10-20 | 北京理工大学 | Detachable electric field arrangement for electronic streak electron microscope |
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| CN100590440C (en) | 2010-02-17 |
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