CN115124225A - Processing method of quartz device - Google Patents
Processing method of quartz device Download PDFInfo
- Publication number
- CN115124225A CN115124225A CN202210856049.1A CN202210856049A CN115124225A CN 115124225 A CN115124225 A CN 115124225A CN 202210856049 A CN202210856049 A CN 202210856049A CN 115124225 A CN115124225 A CN 115124225A
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- CN
- China
- Prior art keywords
- quartz device
- processing
- quartz
- temperature
- pure oxygen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B20/00—Processes specially adapted for the production of quartz or fused silica articles, not otherwise provided for
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B23/00—Re-forming shaped glass
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
- C03C23/007—Other surface treatment of glass not in the form of fibres or filaments by thermal treatment
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a processing method of a quartz device. The processing method of the quartz device comprises the following steps: blowing pure oxygen into the damaged position under the condition that the temperature of the damaged position of the quartz device reaches 1400-1800 ℃, and repeatedly operating until the damaged position is bonded. The method can improve the dimensional accuracy, so that the dimensional accuracy of the damaged part reaches below 0.1mm and is far higher than that of the prior art by more than 1 cm; and long-time processing time can be avoided, and compared with the traditional method, the efficiency can be improved by 80 percent, and the cost is reduced.
Description
Technical Field
The invention relates to a processing method of a quartz device.
Background
In the integrated circuit photovoltaic diffusion process, a quartz tube is required to be used as a chamber, a quartz boat is required to be used as a carrier, and a quartz heat-insulating barrel is required to be used for heat insulation, so that the used quartz device is required to have higher precision. However, quartz devices often suffer from cracking due to temperature differences during oxyhydrogen flame processing.
In order to solve the problems, the conventional processing method is to directly blow open the crack of the quartz device by oxyhydrogen flame or fill and repair the quartz device by adopting a method of matching oxyhydrogen flame with a quartz welding rod after mechanical breach after stress is eliminated by annealing of the quartz device, but the processing method has long processing time and high cost.
Disclosure of Invention
The invention aims to overcome the defects of high dimensional accuracy, long processing time and high cost in the prior art when processing the broken part of the quartz device, thereby providing a processing method of the quartz device, which can avoid long-time processing time and reduce cost under the condition of ensuring high dimensional accuracy.
The invention solves the technical problems through the following technical scheme:
the invention provides a quartz device processing method, which comprises the following steps: and blowing pure oxygen into the damaged part of the quartz device under the condition that the temperature of the damaged part reaches 1400-1800 ℃.
In the present invention, the quartz device may be a quartz device having a purity of 99.9% or more.
In the present invention, the treatment method may be a repair method. The repairing method can bond the broken parts of the quartz device.
In the invention, the temperature of the damaged part can reach 1400-1800 ℃ through oxyhydrogen flame.
The baking time of the oxyhydrogen flame can be based on the fact that the quartz surface is red after being baked, preferably at least 10s, more preferably 10-40 s, such as 30 s.
In the present invention, the composition of the oxyhydrogen gas may be conventional in the art, and preferably, the oxyhydrogen gas in the oxyhydrogen flame is formed by mixing hydrogen gas and oxygen gas.
Wherein the volume ratio of the hydrogen to the oxygen is preferably 2: 1.
In the invention, the temperature of the damaged part is preferably 1400 ℃ or 1500-1800 ℃, such as 1500 ℃, 1600 ℃, 1700 ℃ or 1800 ℃, and further such as 1600 ℃.
In the present invention, the pure oxygen may have an oxygen purity of 2 or more and 9 or more, for example, 99.9%.
In the present invention, the flow rate of the pure oxygen can be 90-110L/h, such as 100L/h.
In the present invention, the blowing time of the pure oxygen may be 5 to 10 seconds.
In the invention, the step of blowing pure oxygen into the damaged part is repeatedly carried out under the condition that the temperature of the damaged part reaches 1400-1800 ℃ until the damaged part is completely bonded.
In the present invention, the damaged portion of the quartz device generally refers to a damage that damages the shape, structure, surface topography, etc. of the original quartz device, such as a crack.
When the breakage of the quartz device is a crack, the complete bonding is generally such that the crack at the breakage disappears.
Wherein, the bonding can also comprise annealing treatment.
On the basis of the common knowledge in the field, the above preferred conditions can be combined randomly to obtain the preferred embodiments of the invention.
The reagents and starting materials used in the present invention are commercially available.
The positive progress effects of the invention are as follows:
the invention enables the structure of the damaged part of the quartz device to be recombined under the environment of high temperature and oxygen enrichment, thereby repairing the quartz device. The method can avoid long-time processing time under the condition of ensuring high dimensional accuracy and enabling the dimensional accuracy of the damaged part to reach below 0.1mm, and compared with the traditional method, the method has the advantages that the efficiency can be improved by 80%, and the cost is reduced.
Drawings
FIG. 1 is a schematic view of the processing of example 1.
Detailed Description
The invention is further illustrated by the following examples, which are not intended to limit the scope of the invention. The experimental methods without specifying specific conditions in the following examples were selected according to the conventional methods and conditions, or according to the commercial instructions.
Example 1
The treatment method is adopted to repair the quartz boat with the transverse and longitudinal cracks of the groove rod, and comprises the following specific steps:
(1) baking the damaged part by oxyhydrogen flame with the ratio of hydrogen to oxygen of 2:1 until the temperature of the damaged part reaches 1600 ℃ and the baking time is about 30 s;
(2) after the flame is extinguished, pure oxygen with the concentration of 99.9 percent is rapidly blown into the damaged part at the flow rate of 100L/h, and the blowing time is about 5-10 s;
(3) repeating the steps until the damaged part is bonded;
(4) keeping the quartz boat at 1130 deg.C for 30min, and annealing.
The processing schematic diagram of the embodiment is shown in fig. 1, processes such as breaking or welding are not needed, and the processing time is greatly shortened to about 20% of that of the traditional process. And (4) carrying out precision test on the repaired quartz boat by using a vernier caliper, wherein the precision can reach below 0.1 mm.
Claims (10)
1. A method for processing a quartz device is characterized by comprising the following steps: and blowing pure oxygen into the damaged part of the quartz device under the condition that the temperature of the damaged part of the quartz device reaches 1400-1800 ℃.
2. The method for processing a quartz device according to claim 1, wherein the quartz device is a quartz device having a purity of 99.9% or more.
3. The method for processing a quartz device according to claim 1, wherein the temperature of the breakage is 1400 to 1800 ℃ by oxyhydrogen flame;
and/or the temperature of the damaged part is 1400 ℃ or 1500-1800 ℃.
4. The method for processing a quartz device according to claim 3, wherein the oxyhydrogen gas in the oxyhydrogen flame is formed by mixing hydrogen gas and oxygen gas;
and/or the temperature of the damaged part is 1500 ℃, 1600 ℃, 1700 ℃ or 1800 ℃;
and/or the baking time of the oxyhydrogen flame is at least 10 s.
5. The method for processing a quartz device according to claim 4, wherein the volume ratio of the hydrogen gas to the oxygen gas is 2: 1;
and/or the temperature at the breakage is 1600 ℃;
and/or the baking time of the oxyhydrogen flame is 10-40 s.
6. The method for treating a quartz device according to claim 5, wherein the baking time of the oxyhydrogen flame is 30 s.
7. The method for processing a quartz device according to claim 1, wherein the pure oxygen has an oxygen purity of 2 or more and 9 or more;
and/or the flow rate of the pure oxygen is 90-110L/h;
and/or the blowing time of the pure oxygen is 5-10 s.
8. The method of processing a quartz device according to claim 7, wherein the pure oxygen has an oxygen purity of 99.9%;
and/or the flow rate of the pure oxygen is 100L/h.
9. The method for processing a quartz device according to claim 1, wherein the step of blowing pure oxygen into the damaged portion is repeated until the damaged portion is completely bonded under a condition that the temperature of the damaged portion reaches 1400 to 1800 ℃.
10. The method of treating a quartz device according to claim 9, further comprising an annealing treatment after said bonding.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210856049.1A CN115124225A (en) | 2022-07-12 | 2022-07-12 | Processing method of quartz device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210856049.1A CN115124225A (en) | 2022-07-12 | 2022-07-12 | Processing method of quartz device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115124225A true CN115124225A (en) | 2022-09-30 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210856049.1A Pending CN115124225A (en) | 2022-07-12 | 2022-07-12 | Processing method of quartz device |
Country Status (1)
| Country | Link |
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| CN (1) | CN115124225A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR19980050935A (en) * | 1996-12-21 | 1998-09-15 | 양승택 | Vertical Self Aligning Flame Hydrolysis (FHD) Reaction Torch |
| CN108779014A (en) * | 2015-12-18 | 2018-11-09 | 贺利氏石英玻璃有限两合公司 | Quartz glass body is prepared in vertical sintered crucible |
| US20190092676A1 (en) * | 2015-12-18 | 2019-03-28 | Heraeus Quarzglas Gmbh & Co. Kg | Preparation of a quartz glass body in a hanging sinter crucible |
| CN111217532A (en) * | 2019-11-29 | 2020-06-02 | 上海富乐德智能科技发展有限公司 | Surface repairing method for quartz shielding plate for semiconductor equipment |
| US20210107799A1 (en) * | 2017-03-27 | 2021-04-15 | Xi Chu | Method, Apparatus, and System for Producing Silicon-Containing Product by Utilizing Silicon Mud Byproduct of Cutting Silicon Material with Diamond Wire |
-
2022
- 2022-07-12 CN CN202210856049.1A patent/CN115124225A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR19980050935A (en) * | 1996-12-21 | 1998-09-15 | 양승택 | Vertical Self Aligning Flame Hydrolysis (FHD) Reaction Torch |
| CN108779014A (en) * | 2015-12-18 | 2018-11-09 | 贺利氏石英玻璃有限两合公司 | Quartz glass body is prepared in vertical sintered crucible |
| US20190092676A1 (en) * | 2015-12-18 | 2019-03-28 | Heraeus Quarzglas Gmbh & Co. Kg | Preparation of a quartz glass body in a hanging sinter crucible |
| US20210107799A1 (en) * | 2017-03-27 | 2021-04-15 | Xi Chu | Method, Apparatus, and System for Producing Silicon-Containing Product by Utilizing Silicon Mud Byproduct of Cutting Silicon Material with Diamond Wire |
| CN111217532A (en) * | 2019-11-29 | 2020-06-02 | 上海富乐德智能科技发展有限公司 | Surface repairing method for quartz shielding plate for semiconductor equipment |
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