CN115122230A - Polishing head, polishing apparatus, and polishing method - Google Patents
Polishing head, polishing apparatus, and polishing method Download PDFInfo
- Publication number
- CN115122230A CN115122230A CN202110266654.9A CN202110266654A CN115122230A CN 115122230 A CN115122230 A CN 115122230A CN 202110266654 A CN202110266654 A CN 202110266654A CN 115122230 A CN115122230 A CN 115122230A
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- Prior art keywords
- wafer
- polishing
- vibration
- monitoring
- polishing head
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- 238000005498 polishing Methods 0.000 title claims abstract description 128
- 238000000034 method Methods 0.000 title claims abstract description 18
- 238000012544 monitoring process Methods 0.000 claims abstract description 54
- 238000007517 polishing process Methods 0.000 claims abstract description 25
- 230000003287 optical effect Effects 0.000 claims description 14
- 238000004891 communication Methods 0.000 claims description 6
- 239000013307 optical fiber Substances 0.000 claims description 4
- 239000000835 fiber Substances 0.000 claims description 2
- 230000035939 shock Effects 0.000 claims 1
- 239000000126 substance Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B41/00—Component parts such as frames, beds, carriages, headstocks
- B24B41/02—Frames; Beds; Carriages
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
Abstract
The invention provides a polishing head, a polishing device and a polishing method, wherein the polishing head comprises: a movable rod and a pressure plate; the movable rod is fixedly connected with the pressure plate, and the pressure plate is used for loading the wafer on one side of the pressure plate, which is far away from the movable rod; a vibration monitoring sensor is arranged in the pressure plate and used for monitoring the vibration condition of the wafer in the polishing process so as to obtain a vibration signal; and the polishing head is used for adjusting the pressure applied to the wafer according to the vibration signal. The invention can accurately control the pressure applied to the wafer by the polishing head.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a polishing head, a polishing device and a polishing method.
Background
As the design patterns on the wafer are gradually refined, the CMP (Chemical Mechanical Polishing) process is increasing for various purposes. Therefore, the control of the polishing thickness of the wafer in the CMP process becomes more important.
Most of the existing control methods regulate the pressure applied to the wafer by the polishing head by controlling the rotating speed of a motor, so as to further adjust the polishing thickness of the wafer. However, the method has low precision in adjusting the polishing thickness of the wafer, and the yield of the wafer is seriously reduced.
Disclosure of Invention
In order to solve the problems, according to the polishing head, the polishing device and the polishing method provided by the invention, the vibration condition of the wafer is monitored by arranging the vibration monitoring sensor in the polishing head, and the pressure applied to the wafer by the polishing head is adjusted according to the vibration condition of the wafer, so that the precision of adjusting the polishing thickness of the wafer can be improved, and the yield of the wafer is improved.
In a first aspect, the present invention provides a polishing head comprising: a movable rod and a pressure plate;
the movable rod is fixedly connected with the pressure plate, and the pressure plate is used for loading the wafer on one side of the pressure plate, which is far away from the movable rod;
a vibration monitoring sensor is arranged in the pressure plate and used for monitoring the vibration condition of the wafer in the polishing process so as to obtain a vibration signal;
and the polishing head is used for adjusting the pressure applied to the wafer according to the vibration signal.
Optionally, the platen is used to load the wafer along a polishing plane;
the vibration monitoring sensors are arrayed within the platen in a direction parallel to the polishing plane.
Optionally, the vibration monitoring sensor comprises: a plurality of concentric circular cables or a plurality of concentric oval cables;
the vibration monitoring sensor is used for monitoring the vibration condition of the wafer in the polishing process through a plurality of concentric circular cables or a plurality of concentric oval cables so as to obtain a vibration signal.
Optionally, the vibration monitoring sensor comprises: a fiber optic impact sensor;
the optical fiber impact sensor is used for sending an optical signal to the wafer and monitoring the vibration condition of the wafer in the polishing process according to the intensity of the light reflected by the wafer so as to obtain a vibration signal.
Optionally, a back membrane is arranged on one side surface of the pressing plate away from the movable rod;
the back film is used for abutting against the wafer in the process of polishing the wafer.
Optionally, a limiting ring is fixedly arranged on one side surface of the pressure plate, which is far away from the movable rod.
In a second aspect, the present invention provides a polishing apparatus comprising: a polishing table and a polishing head as described in any one of the above;
the movable rod is positioned on one side of the pressure plate, which is far away from the polishing table.
Optionally, the polishing apparatus further comprises: a control module;
the control module is in communication connection with the vibration monitoring sensor and is used for sending a regulation instruction to the polishing head according to the vibration signal so that the polishing head can adjust the pressure applied to the wafer according to the regulation instruction.
Optionally, the polishing apparatus further comprises: a display module;
the display module is in communication connection with the control module and is used for displaying the vibration signal.
In a third aspect, the present invention provides a polishing method comprising:
providing a polishing head and a polishing table;
the polishing head drives the wafer to polish on the polishing table;
monitoring the vibration condition of the wafer in the polishing process, and converting the vibration condition of the wafer into a vibration signal;
and adjusting the pressure applied to the wafer by the polishing head according to the vibration signal.
Optionally, the monitoring vibration of the wafer during the polishing process, and converting the vibration of the wafer into a vibration signal includes:
and sending an optical signal to the wafer, and monitoring the vibration condition of the wafer in the polishing process according to the intensity of the light reflected by the wafer so as to obtain a vibration signal.
Optionally, the sending the optical signal to the wafer and monitoring the vibration of the wafer during the polishing process according to the intensity of the light reflected by the received wafer to obtain the vibration signal includes:
sending an optical signal to the wafer through a vibration monitoring sensor, and monitoring the vibration condition of the wafer in the polishing process according to the intensity of the light reflected by the wafer so as to obtain a vibration signal;
wherein the vibration monitoring sensor is located within the polishing head.
According to the polishing head, the polishing device and the polishing method provided by the embodiment of the invention, the vibration condition of the wafer is monitored by arranging the vibration monitoring sensor in the polishing head, and the pressure applied to the wafer by the polishing head is adjusted according to the vibration condition of the wafer, so that the precision of adjusting the polishing thickness of the wafer can be improved, and the yield of the wafer is improved.
Drawings
FIG. 1 is a schematic cross-sectional view of a polishing head according to one embodiment of the present application;
fig. 2 is a structural view of a polishing apparatus according to an embodiment of the present application.
Reference numerals
1. A polishing table; 2. a polishing head; 21. a movable rod; 22. a platen; 23. a vibration monitoring sensor; 231. a cable; 24. a back film; 25. a limiting ring; 3. a nozzle; 4. a control module; 5. a display module; 6. and (5) a wafer.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all the embodiments. All other embodiments, which can be obtained by a person skilled in the art without making any creative effort based on the embodiments in the present invention, belong to the protection scope of the present invention.
Example one
The present embodiment provides a polishing head 2, and with reference to fig. 1, the polishing head 2 includes: a movable lever 21 and a pressure plate 22. The movable rod 21 is positioned above the pressure plate 22, the movable rod 21 is perpendicular to the pressure plate 22, and the bottom end of the movable rod 21 is fixedly connected with the pressure plate 22. Wherein, the platen 22 is used for loading the wafer 6 on the side of the platen 22 far away from the movable rod 21; the movable rod 21 is used for driving the pressure plate 22 to move.
A vibration monitoring sensor 23 is provided inside the platen 22. The vibration monitoring sensor 23 is used for monitoring the vibration condition of the wafer 6 in the polishing process to obtain a vibration signal; the polishing head 2 is used for adjusting the air pressure applied to the wafer 6 according to the vibration signal.
Further, the platen 22 is used to load the wafer 6 along the polishing plane. The vibration monitoring sensors 23 are arrayed in the platen 22 in a direction parallel to the polishing plane. In this embodiment, the polishing plane is a horizontal plane; the vibration monitoring sensor 23 is an optical fiber impact sensor; the optical fiber impact sensor is used for sending an optical signal to the wafer 6 and monitoring the vibration of the wafer 6 during the polishing process according to the intensity of the light reflected by the received wafer 6 to obtain a vibration signal.
Further, the vibration monitoring sensor 23 includes: a plurality of concentric circular cables 231 or a plurality of concentric oval cables 231. In the present embodiment, the vibration monitoring sensor 23 includes a plurality of concentric circular cables 231, and the vibration monitoring sensor 23 is configured to monitor the vibration of the wafer 6 during the polishing process through the plurality of concentric circular cables 231 to obtain a vibration signal.
In addition, a back film 24 is fixedly provided on the lower surface of the platen 22. The backing film 24 is used to contact the wafer 6 during polishing of the wafer 6. Specifically, the back film 24 is a film structure for pressing against the surface of the wafer 6, and is adapted to the surface of the wafer 6 to compensate for the unevenness of the surface of the wafer 6 and the particles on the surface of the wafer 6. The back film 24 may be specifically selected from a film structure similar to a silicone gel substance and having a small hole for vacuum-pumping.
A limiting ring 25 is fixedly arranged on one side surface of the pressure plate 22 away from the movable rod 21. The back film 24 is located in a limiting ring 25, and the limiting ring 25 is used for limiting the position of the wafer 6 in the horizontal direction.
In an optional embodiment, the pressure plate 22 and the back film 24 are made of transparent materials, or the pressure plate 22 and the back film 24 are both provided with light-transmitting holes, so that the transmission of optical signals is facilitated, the polishing precision is improved, and the polishing efficiency is improved.
Example two
The present embodiment provides a polishing apparatus, which, in combination with fig. 1 and 2, includes: polishing table 1, above-mentioned polishing head 2, nozzle 3, control module 4 and display module 5. In the present embodiment, the display module 5 is an EDP display.
Specifically, the movable lever 21 is located on a side of the platen 22 away from the polishing table 1. The polishing pad on top of the polishing table 1 is horizontally oriented toward the polishing head 2. The nozzle 3 is fixedly arranged above the polishing table 1. The control module 4 is in communication connection with the vibration monitoring sensor 23; the display module 5 is in communication connection with the control module 4; the nozzle 3 is used for spraying polishing liquid to the polishing pad on the top of the polishing table 1; the control module 4 is configured to send a regulation instruction to the polishing head 2 according to the vibration signal, so that the polishing head 2 adjusts the pressure applied to the wafer 6 according to the regulation instruction; the display module 5 is used for displaying the vibration signal, so that an operator can control the polishing head 2 by the control module 4 according to the displayed vibration signal.
When the polishing platform is used, the wafer 6 is positioned in the limiting ring 25, the back film 24 is pressed against the upper surface of the wafer 6, the lower surface of the wafer 6 is pressed against the polishing pad, and the polishing pad can polish the surface of the wafer 6 along with the rotation of the polishing pad driven by the polishing platform. In the process that the wafer 6 is polished by the polishing table 1, the vibration monitoring sensor 23 sends an optical signal to the wafer 6, and the intensity of light reflected by the wafer 6 is received; then, the vibration detection sensor calculates parameters such as the displacement of the wafer 6, the vibration amplitude of the wafer 6, the gap between the wafer 6 and the limiting ring 25, the gap between the wafer 6 and the polishing head 2 and the like, and sends the parameters to the control module 4 as vibration signals, and after the control module 4 analyzes the vibration signals, the analyzed vibration signals are sent to the display module 5 for displaying; an operator can send a control instruction to the control module 4 according to the display content of the display module 5, so that the control module 4 sends a regulation instruction to the polishing head 2; finally, the polishing head 2 adjusts the amount of air pressure applied to the wafer 6 according to the regulation and control instruction.
The polishing device monitors the vibration condition of the wafer 6 by arranging the vibration monitoring sensor 23 in the polishing head 2, and adjusts the pressure applied to the wafer 6 by the polishing head 2 according to the vibration condition of the wafer 6, so that the precision of adjusting the polishing thickness of the wafer 6 can be improved, and the yield of the wafer 6 is improved.
EXAMPLE III
Based on the above polishing apparatus, the present embodiment provides a polishing method including: providing a polishing head 2 and a polishing table 1; the wafer 6 is driven by the polishing head 2 to be polished on the polishing table 1; monitoring the vibration condition of the wafer 6 in the polishing process, and converting the vibration condition of the wafer 6 into a vibration signal; and adjusting the pressure applied by the polishing head 2 to the wafer 6 according to the vibration signal.
Further, monitoring the vibration of the wafer 6 during the polishing process and converting the vibration of the wafer 6 into a vibration signal includes: an optical signal is sent to the wafer 6, and the vibration of the wafer 6 during the polishing process is monitored according to the intensity of the light reflected by the wafer 6, so as to obtain a vibration signal.
Further, the sending of the optical signal to the wafer 6 and the monitoring of the vibration of the wafer 6 during the polishing process according to the intensity of the light reflected by the received wafer 6 to obtain the vibration signal include: an optical signal is sent to the wafer 6 through the vibration monitoring sensor 23, and the vibration of the wafer 6 during the polishing process is monitored according to the intensity of the light reflected by the received wafer 6, so as to obtain a vibration signal.
According to the polishing method, the vibration condition of the wafer 6 is monitored by using the vibration monitoring sensor 23, and the pressure applied to the wafer 6 by the polishing head 2 is adjusted according to the vibration condition of the wafer 6, so that the precision of adjusting the polishing thickness of the wafer 6 can be improved, and the yield of the wafer 6 is improved.
The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are also within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (12)
1. A polishing head, comprising: a movable rod and a pressure plate;
the movable rod is fixedly connected with the pressure plate, and the pressure plate is used for loading the wafer on one side of the pressure plate, which is far away from the movable rod;
a vibration monitoring sensor is arranged in the pressure plate and used for monitoring the vibration condition of the wafer in the polishing process so as to obtain a vibration signal;
and the polishing head is used for adjusting the pressure applied to the wafer according to the vibration signal.
2. The polishing head as set forth in claim 1 wherein the platen is for loading a wafer along a polishing plane;
the vibration monitoring sensors are arrayed within the platen in a direction parallel to the polishing plane.
3. The polishing head as set forth in claim 1 wherein the vibration monitoring sensor comprises: a plurality of concentric circular cables or a plurality of concentric oval cables;
the vibration monitoring sensor is used for monitoring the vibration condition of the wafer in the polishing process through a plurality of concentric circular cables or a plurality of concentric oval cables so as to obtain a vibration signal.
4. The polishing head as set forth in claim 1 wherein the vibration monitoring sensor comprises: a fiber optic shock sensor;
the optical fiber impact sensor is used for sending an optical signal to the wafer and monitoring the vibration condition of the wafer in the polishing process according to the intensity of the light reflected by the wafer so as to obtain a vibration signal.
5. The polishing head as claimed in claim 1, wherein a side of the platen remote from the movable bar is provided with a back film;
the back film is used for abutting against the wafer in the process of polishing the wafer.
6. The polishing head as set forth in claim 1 wherein a retaining ring is fixedly disposed on a side of the platen remote from the movable rod.
7. A polishing apparatus, comprising: a polishing table and a polishing head according to any one of claims 1 to 6;
the movable rod is positioned on one side of the pressure plate, which is far away from the polishing table.
8. The polishing apparatus as recited in claim 7, further comprising: a control module;
the control module is in communication connection with the vibration monitoring sensor and is used for sending a regulation and control instruction to the polishing head according to the vibration signal so that the polishing head can adjust the pressure applied to the wafer according to the regulation and control instruction.
9. The polishing apparatus according to claim 8, further comprising: a display module;
the display module is in communication connection with the control module and is used for displaying the vibration signal.
10. A method of polishing, comprising:
providing a polishing head and a polishing table;
the polishing head drives the wafer to polish on the polishing table;
monitoring the vibration condition of the wafer in the polishing process, and converting the vibration condition of the wafer into a vibration signal;
and adjusting the pressure applied to the wafer by the polishing head according to the vibration signal.
11. The polishing method as recited in claim 10, wherein the monitoring the vibration of the wafer during polishing and converting the vibration of the wafer into a vibration signal comprises:
and sending an optical signal to the wafer, and monitoring the vibration condition of the wafer in the polishing process according to the intensity of the light reflected by the wafer so as to obtain a vibration signal.
12. The method as claimed in claim 10, wherein the transmitting the optical signal to the wafer and monitoring the vibration of the wafer during the polishing process according to the intensity of the light reflected by the wafer to obtain the vibration signal comprises:
sending an optical signal to the wafer through a vibration monitoring sensor, and monitoring the vibration condition of the wafer in the polishing process according to the intensity of the light reflected by the wafer so as to obtain a vibration signal;
wherein the vibration monitoring sensor is located within the polishing head.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110266654.9A CN115122230A (en) | 2021-03-11 | 2021-03-11 | Polishing head, polishing apparatus, and polishing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110266654.9A CN115122230A (en) | 2021-03-11 | 2021-03-11 | Polishing head, polishing apparatus, and polishing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115122230A true CN115122230A (en) | 2022-09-30 |
Family
ID=83374991
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110266654.9A Pending CN115122230A (en) | 2021-03-11 | 2021-03-11 | Polishing head, polishing apparatus, and polishing method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115122230A (en) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20070023859A (en) * | 2005-08-25 | 2007-03-02 | 삼성코닝 주식회사 | Wafer carrier and monitoring apparatus for polishing of semiconductor wafer |
| CN205237796U (en) * | 2014-11-04 | 2016-05-18 | K.C.科技股份有限公司 | Chemical mechanical grinding device |
| KR20170000067A (en) * | 2015-06-23 | 2017-01-02 | 주식회사 케이씨텍 | Chemical mechanical polishing apparatus |
| CN206536347U (en) * | 2015-10-27 | 2017-10-03 | K.C.科技股份有限公司 | Chemical mechanical polishing device |
| CN108475627A (en) * | 2015-11-26 | 2018-08-31 | 胜高股份有限公司 | Polishing wafer method |
| CN109968190A (en) * | 2017-12-14 | 2019-07-05 | 凯斯科技股份有限公司 | Wafer grinding system |
| CN110193776A (en) * | 2019-06-11 | 2019-09-03 | 英特尔半导体(大连)有限公司 | Polish pressure control method, device and the equipment of polishing wafer |
-
2021
- 2021-03-11 CN CN202110266654.9A patent/CN115122230A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20070023859A (en) * | 2005-08-25 | 2007-03-02 | 삼성코닝 주식회사 | Wafer carrier and monitoring apparatus for polishing of semiconductor wafer |
| CN205237796U (en) * | 2014-11-04 | 2016-05-18 | K.C.科技股份有限公司 | Chemical mechanical grinding device |
| KR20170000067A (en) * | 2015-06-23 | 2017-01-02 | 주식회사 케이씨텍 | Chemical mechanical polishing apparatus |
| CN206536347U (en) * | 2015-10-27 | 2017-10-03 | K.C.科技股份有限公司 | Chemical mechanical polishing device |
| CN108475627A (en) * | 2015-11-26 | 2018-08-31 | 胜高股份有限公司 | Polishing wafer method |
| CN109968190A (en) * | 2017-12-14 | 2019-07-05 | 凯斯科技股份有限公司 | Wafer grinding system |
| CN110193776A (en) * | 2019-06-11 | 2019-09-03 | 英特尔半导体(大连)有限公司 | Polish pressure control method, device and the equipment of polishing wafer |
Non-Patent Citations (1)
| Title |
|---|
| 黎敏，廖延彪: "《光纤传感器及其应用技术》", 31 August 2008, 武汉：武汉大学出版社, pages: 105 - 107 * |
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