CN206536347U - Chemical mechanical polishing device - Google Patents
Chemical mechanical polishing device Download PDFInfo
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- CN206536347U CN206536347U CN201620998256.0U CN201620998256U CN206536347U CN 206536347 U CN206536347 U CN 206536347U CN 201620998256 U CN201620998256 U CN 201620998256U CN 206536347 U CN206536347 U CN 206536347U
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Abstract
The utility model provides a kind of chemical mechanical polishing device, its as a kind of chemical mechanical polishing device being ground, including：Grinding flat plate, it carries out rotation in the form of the grinding pad that the grinding layer of the wafer is contacted covers face thereon；Optical sensor, it is provided with light sending part and light receiver, multiple optical signals are exposed to the grinding layer of the wafer and form a region by the smooth sending part, the light receiver receives light receiving signal, and the light receiving signal is that the optical signal irradiated in the smooth sending part reflects in the grinding layer；Control unit, its light receiving signal received from the light receiver obtains the grinding layer thickness of the wafer, and the downside whether optical sensor is located at the wafer is perceived by the first light receiving signal, first light receiving signal is that a part of sense part from as the light receiver is obtained.
Description
Technical field
The utility model is related to a kind of chemical mechanical polishing device, and a kind of cmp dress is related in more detail
Put, the chemical mechanical polishing device in order to be measured in chemical mechanical milling tech to the thickness of wafer grinding layer, and
The evaluated error produced by the position of the light of irradiation is solved, and can more accurately be entered in terms of wafer grinding layer thickness is determined
Row signal transacting.
Background technology
Normally, cmp (Chemical Mechanical Polishing；CMP) technique is one kind with such as
Lower form causes the flat technique in the surface of substrate：Contacted to the state on the grinding flat plate of rotation and carried out with the substrate of wafer etc.
Mechanical lapping is carried out while rotation, so as to reach prespecified thickness.
Therefore, as shown in Fig. 1 a and Fig. 1 b, chemical mechanical polishing device is in grinding flat plate 10, to cause grinding pad 11 to cover
While being placed on state on the grinding flat plate 10 and carry out rotation, by grinding head 20 by wafer W to the surface of grinding pad 11
Rotated while pressurization, so as to flatly grind the surface of wafer.Therefore, being provided with so that adjustment disk
The adjuster (conditioner) 30 modified while the rotations of (conditioning disk) 31 (30r), and will hold
The lapping liquid of row chemical grinding is supplied to the surface of grinding pad 11 by lapping liquid supply unit 40, and the adjustment disk 31 is with defined
Plus-pressure (30F) pressurizes to the surface of grinding pad.
Now, the grinding layer thickness for carrying out the wafer of chemical mechanical milling tech is reaching final goal (target) thickness
In the state of must interrupt, therefore in chemical mechanical milling tech by thickness detecting sensor 50 constantly to wafer grind
The thickness of layer is monitored.Difference according to circumstances, passes through 50 pairs of crystalline substances of thickness detecting sensor in chemical mechanical milling tech
The grinding layer thickness distribution of member is measured, so as to can also be controlled in the form of thickness distribution is completed by control unit 70
System.
Although the thickness detecting sensor 50 is configured in different forms according to wafer grinding layer Le species,
It is that in the case of for optical sensor, wafer grinding layer Le can be all suitable for oxide skin(coating) and metal level.In wafer grinding layer
Le be oxide skin(coating) in the case of, can since the grinding initial stage stage from the thickness detecting sensor 50 formed by optical sensor
The thickness distribution of wafer grinding layer is obtained, while can also perceive grinding deadline point.And it is metal in wafer grinding layer Le
In the case of layer, grinding deadline point can be perceived.
In other words, as shown in Fig. 1 b and Fig. 2, it is being configured and is passing through in the form of being rotated together with grinding pad 11
During the downside of wafer, exposed to by optical signal Li after grinding layer Le, to entering in the grinding layer Le light receiving signal Lo reflected
Row is received, and light receiving signal Lo is sent into control unit 70, so as to perceive wafer W grinding layer Le thickness.Specifically
Ground, as shown in Figures 4 and 5, the optical signal Li irradiated from optical sensor 50 is while through wafer W downside, through from grinding
The light receiving signal Lo1 and grinding layer Le of the surface Se reflections of layer are ground, so that the interference signal or phase that pass through light receiving signal Lo2
Potential difference is distributed to obtain the thickness or thickness of grinding layer, and the light receiving signal Lo2 is reflected from the border Si with SiN layer,
The SiN layer is present in the inner side of oxide skin(coating).
But, as shown in Figures 4 and 5, for for making the wafer W of semiconductor element or component (package), grind
SiN layer boundary face Si on the inside of mill layer Le is uneven and is formed with bumps 99.In other words, for make semiconductor element or
Device (device) D of component region is formed with bumps 99, because device D intermediate region B is to be used to respectively enter device D
The line of cut of row segmentation, therefore do not need and additionally mounted can form tabular surface.
But, for optical sensor 50, its diameter wo is formed as below 2mm in very small form, so that by illumination
It is incident upon one place and obtains grinding layer thickness.Thus, as shown in figure 5, being worn in the optical signal Li that diameter is about 10~20 μm
Cross grinding layer Le surface and expose to S1, S2 in the case of the B of intermediate region, although light receiving signal Lo1, Lo2 are all connect
Receive to optical sensor 50, so as to determine grinding layer Le thickness exactly, if but optical signal Li passes through grinding layer Le table
Face and expose to device 99 jog 99 medial surface S3, then because reflection direction it is respectively different so as to lose light-receiving letter
The state of number Lo1, Lo2 a part is received, therefore there are the following problems, due to the position received to optical signal Li
S and cause the measure accuracy of wafer W grinding layer Le thickness to there is significant difference.
Thus, although attempt optical signal Li only exposing to the intermediate region B without forming apparatus D, but with certainly
The optical signal Li forms for only exposing to intermediate region B are controlled what is be very difficult in the wafer W turned plate face, and mesh
It is preceding to be realized in reality.
Utility model content
The utility model is used for the problem of solve as described above, it is therefore intended that in order in chemical mechanical milling tech to crystalline substance
The thickness of first grinding layer is measured, so as to solve evaluated error caused by the position due to the light of irradiation.
In addition, the purpose of this utility model is, in order to eliminate evaluated error caused by the position due to light, and compared with
In the case of the irradiated area of the earth amplification optical sensor, sensing (sensing) position of optical sensor is perceived exactly, and it is accurate
Really perceive the thickness distribution produced due to the position of wafer.
By as described above, the purpose of this utility model is, even if without complicated control, also can be exactly to wafer
Grinding layer thickness be measured.
The utility model is in order to reach purpose as described above there is provided a kind of chemical mechanical polishing device, the chemical machine
Tool lapping device is as a kind of in order to make multiple devices and described device to matching somebody with somebody in the form of the degree spacing of interval intermediate region
The chemical mechanical polishing device that the grinding layer for the wafer put is ground, the chemical mechanical polishing device is characterised by, is wrapped
Include：Grinding flat plate, it carries out rotation in the form of the grinding pad that the grinding layer of the wafer is contacted is covered in above；Light is passed
Sensor, it is fixed on the grinding flat plate and rotated together with the grinding flat plate, and is provided with light sending part and light-receiving
Multiple optical signals are exposed to the grinding layer of the wafer and form point (spot) region by portion, the smooth sending part, described
Light receiver receives light receiving signal, and the light receiving signal is the optical signal in the smooth sending part irradiation in the grinding layer
Reflection；Control unit, it obtains the grinding layer thickness of the wafer from the light receiving signal received in the light receiver,
And the downside whether optical sensor is located at the wafer, the first light-receiving letter are perceived by the first light receiving signal
Number it is that a part of sense part from as the light receiver is obtained.
As described above, following effect is can obtain, in being permitted that the light receiving signal to the reflected signal as light is received
It more than a part will be configured to sense part in many light receivers, it is described just to be sent out from the multiple light corresponding with the point region of expansion
Send what portion was irradiated, so as to perceive the downside whether light receiving signal is located at wafer, the light receiving signal is by being passed in light
The light that is irradiated in sensor and produce, so as to perceive the thickness of wafer grinding layer exactly by light receiving signal, the light connects
The collection of letters number is produced by coming from the light of the light sending part for the downside for being located at wafer, thus, even in optical sensor
A part is located at the outside of wafer, and an other parts are only located in the state of the downside of wafer, only select and produced by reflected light
Raw light receiving signal, the reflected light is in the reflection of wafer grinding layer, so as to also may be used in the fringe region of wafer
Accurately obtain the grinding layer thickness of wafer.
Here, the sense part is formed by a part for the light receiver, so as to compared with prior art, can perceive big
A part for the optical sensor of area is located at the state of the downside of the wafer.
Most of all, preferably, the point region of light is configured to form any one in width and length with described device
Compare bigger diameter more than individual, it is described just from the smooth sending part irradiation of the optical sensor.As described above so that
Optical signal is incident upon the grinding layer of wafer, and by the light point area of optical sensor with any one in the width and length than device
Bigger form is formed more than individual, and the optical sensor is received to the light receiving signal reflected in wafer, with this, due to
Also light receiving signal is definitely included in the light receiving signal that wafer grinding layer is reflected, the light receiving signal is in device institute
Region reflection, even if therefore because a part for optical signal incurs loss or diffusing reflection in the region where device
So as to being not received by light in optical sensor, also may be such that with the irradiation position of optical signal independently in light receiving signal by
The amount of the optical signal of loss or diffusing reflection without receiving becomes uniform, and then is incident in grinding layer from the area of amplification
And the light receiving signal reflected can perceive the thickness of grinding layer exactly.
Therefore, preferably, the point of the optical sensor is to may be such that the shape that a device is arranged inside the point
Shape.For example, the spot diameter of the optical sensor is formed as more than 1 inch.
In addition, the width of the optical signal is defined as adding up the width of described device and the width of the intermediate region
Size, the length of the optical signal may be designated as by the length of the length of described device and the intermediate region add up it is big
It is small.In the case, no matter optical signal is present in the optional position of wafer so that at least one device and an intermediate region are same
When be arranged at an inside.
In other words, it is desirable to which the width of the optical signal is defined as the width of described device and the middle area
The integral multiple for the size that the width in domain is added up, the length legislations of the optical signal are by the length of described device and the centre
The integral multiple for the size that the length in region is added up.By as described above, the point projected from optical sensor includes defined number
Device and intermediate region, incurred loss in a device or the amount of irreflexive light receiving signal is remained so as to may be such that
Necessarily.
Therefore, the optical signal is formed as the rectangle form similar to device form, rather than it is circular.It is more highly preferred to
Ground, the optical signal is with will abut against the shape synthesized one by one along width and length direction in the intermediate region of device
The rectangle of the similar form of shape.
In addition, the control unit can only be located at the downside of the wafer by the sense part in the optical sensor
Period is controlled in the form of receiving the light receiving signal to the optical sensor.Thus, obtaining brilliant due to not receiving
Institute's unwanted light receiving signal during the grinding layer thickness of member, therefore so that required when obtaining grinding layer thickness in control unit
The calculating wanted becomes to be more prone to.
In addition, the light receiver is received during grinding pad rotation is turned around to the light receiving signal；
The control unit is received by the sense part to be located at the time data of the downside of the wafer to the optical sensor,
And the light receiving signal received in the light receiver and the time data are mapped into (mapping) to identical
Time shaft, and only can also be felt by the optical sensor positioned at the light receiving signal of the part of the downside of the wafer
Know the thickness of the grinding layer.Thus, all to receive the information of shape to(for) wafer grinding layer thickness in light receiver
State obtains the thickness of wafer grinding layer, with this, when obtaining grinding layer thickness a part for required light receiving signal by
To loss the problem of can be solved, and can also be used in the state of grinding technics terminates to light receiving signal data carry out
Track and the variable of grinding technics is adjusted.
Also, the control unit of the chemical mechanical polishing device receives the light receiving signal of optical sensor and causes light-receiving
Aignal averating, so that the thickness of the grinding layer is perceived, the light-receiving of the large area thus reflected from the optical signal of amplification
Signal can perceive grinding layer thickness exactly.
As described above, the utility model can obtain following effect, enter in the light receiving signal to the reflected signal as light
It more than a part will be configured to sense part in many light receivers that row is received, it is described just from corresponding with the point region of expansion
Multiple smooth sending parts be irradiated, so as to perceive the downside whether light receiving signal is located at wafer, the light receiving signal
It is light by being irradiated in multiple smooth sending parts and produces, so as to only passes through the thickness that light receiving signal calculates wafer grinding layer
Degree, the light receiving signal is produced by coming from the light of the light sending part for the downside for being located at wafer, thus, by big
The optical sensor of area can also accurately obtain the grinding layer thickness of wafer fringe region.
Moreover, the utility model also can obtain following advantageous effect so that optical signal is incident upon the grinding of wafer
Layer, and the light point area of optical sensor is amplified to be formed in the bigger form of the size than device, the optical sensor to
The light receiving signal of wafer reflection is received, with this, by the light receiving signal that is reflected in wafer grinding layer also definitely
Including light receiving signal, the light receiving signal is reflected in the region where device, even if therefore due to optical signal
A part incurs loss in the region where device or diffusing reflection in optical sensor so as to being not received by, also may be such that with
The irradiation position of optical signal independently incurs loss in light receiving signal or diffusing reflection is without the optical signal that receives
Amount becomes uniform, and then perceives the thickness of grinding layer exactly from light receiving signal, and the light receiving signal is the face with amplification
What product was incident upon grinding layer and reflected.
By as described above, the utility model can obtain following effect, even if not believing the light projected from optical sensor
Number position intricately controlled, also can in chemical mechanical milling tech in the entire area through wafer exactly
To the thickness of grinding layer.
Brief description of the drawings
Fig. 1 a are the front elevations for showing common chemical mechanical polishing device,
Fig. 1 b are Fig. 1 a plans,
Fig. 2 is the enlarged drawing of Fig. 1 a " A " part,
Fig. 3 is the figure for the composition for showing wafer,
Fig. 4 is the enlarged drawing of Fig. 3 " B " part,
Fig. 5 is the sectional view of the line of cut V-V according to Fig. 4,
Fig. 6 is the front elevation for the composition for showing the chemical mechanical polishing device according to one embodiment of the present utility model,
Fig. 7 is Fig. 6 plan,
Fig. 8 is the enlarged drawing of Fig. 6 " B " part,
Fig. 9 a are the figures for the optical sensor arrangement for showing the line of cut C-C according to Fig. 8,
Fig. 9 b are to show the light sensing corresponding with the line of cut C-C of Figure 10 according to other embodiment of the present utility model
The figure of device arrangement,
Figure 10 is the figure that the point (spot) for the optical signal for showing optical sensor reaches the track of wafer,
Figure 11 a are Figure 10 a part of enlarged drawings,
Figure 11 b are the states for showing to reach wafer according to the point of the optical signal of other embodiments of the present utility model
Figure,
Figure 12 is the sectional view of the line of cut X-X according to Figure 11 a.
Embodiment
Hereinafter, the chemical mechanical polishing device 100 according to one embodiment of the present utility model is carried out in detail referring to the drawings
Describe in detail bright.But, when being illustrated to the utility model, in order that main idea of the present utility model it is apparent, omit for
The specific description of known function or composition.
Included according to the chemical mechanical polishing device 100 of one embodiment of the present utility model：Grinding flat plate 10, with wafer
The grinding pad 11 that the form that W abradant surface is ground is contacted is covered in the grinding flat plate 10；Grinding head 20, it is by wafer
While W is pressurizeed with being arranged at the state of bottom surface so that wafer W carries out rotation；Adjuster 30, it is provided with adjustment disk
31, the adjustment disk 31 with the state contacts of pressurization in the surface of grinding pad 11 and rotation (30r), so as to be carried out to grinding pad 11
Modification；Lapping liquid supply unit 40, it to wafer W in order to carry out chemical grinding, so as to supply lapping liquid；Optical sensor 500, it is consolidated
Surely grinding pad 11 is arranged at, and when through the bottom surface of adjustment disk 31, receives the grinding layer Le that optical signal Li is exposed to wafer W
And the light receiving signal Lo reflected, so that the thickness for perceiving grinding layer Le；Control unit 700, it is from optical sensor 500
The light receiving signal of reception perceives the thickness (including " thickness variation amount ") of grinding pad 11 and wafer grinding layer Le thickness (bag
Include " thickness variation amount ").
The state that the grinding flat plate 10 covers face thereon with grinding pad 11 carries out rotation driving.Such as Fig. 6 and Fig. 7 institutes
Show, optical sensor 500 is fixed on grinding flat plate 10 and is configured to rotate together with grinding pad 11.Due to optical sensor 500 with
Grinding pad 11 is rotated together with, therefore the control circuit of control unit 700 can also be rotated together with grinding flat plate 10, and can also be passed through
The known device of slip ring (slip ring) etc. will apply to the power supply of optical sensor 500 and come from optical sensor 500
Signal is sent to the control circuit of non-rotating state.
The grinding head 20 obtains rotary driving force from outside, so that so that wafer W to be located to the state of bottom surface by wafer W
Rotated while pressurization to grinding pad 11.Therefore, it has been internally formed pressure chamber (chamber) in grinding head 20, and
The plus-pressure pressurizeed to wafer W can be adjusted by adjusting the pressure of pressure chamber.
The state that the adjuster 30 stresses on grinding pad 11 with adjustment disk 31 is rotated (30r) driving, and is exchanged
Save disk 30 and carry out arm (arm) rotary motion (30d), the environment that lapping liquid can flow into the surface of grinding pad 11 is modified to this.
The lapping liquid supply unit 40 supplies lapping liquid to grinding pad 11, so that lapping liquid is by being formed at grinding pad
The small groove on 11 surface flows into wafer W.With this, wafer grinding layer Le carries out the chemical grinding technique by lapping liquid.
As shown in FIG. 6 and 7, the optical sensor 500 is fixed on grinding flat plate 10, and is together revolved with grinding pad 11
Turn, therefore be arranged along being rotated with the circular path P of defined radius length separately from the center of grinding pad 11
(50r).The optical sensor 500 of grinding flat plate 10 is arranged to set from the mutually different spacing distance in the center of grinding pad 11
It is multiple, while rotation in the position of each fixation, wafer grinding layer Le distribution is drawn in multiple paths.Herein
In the case of, optical sensor 500 receives light receiving signal Lo, the light receiving signal Lo during through wafer W underside areas
It is that the optical signal Li projected from optical sensor 500 reflexes to wafer grinding layer Le.But, of the present utility model other real
Apply in form, optical sensor 500 also can only set one.
As illustrated in fig. 9, each optical sensor 500 includes：Multiple smooth sending parts 510, light Li is exposed to wafer and ground by it
Multiple positions of layer；Light receiver 520, it is from multiple smooth sending parts that it, which receives light receiving signal Lo, the light receiving signal Lo,
What the light Li of 510 irradiations was reflected to form in wafer grinding layer Le；Sense part 530, it is to from one in multiple smooth sending parts 510
The light of irradiation is divided to be received, so as to perceive the relative wafer W of optical sensor 500 position.
For the optical sensor 500 illustrated in fig. 9 a, although light receiver 520 is configured at central portion, but as schemed
Illustrated in 9b, multiple light receivers 520 are configured in the form of being adjacent to multiple smooth sending parts 510, and can be to from light
The light receiving signal for the light Li that sending part 510 irradiates is received.
Also, the sense part 530 that is perceived to the relative wafer W of optical sensor 500 position, 520' match somebody with somebody in outermost
Be equipped with 2 to 4, and optical sensor 500 is entered to wafer W downside moment and optical sensor 550 under wafer W
The moment that side is moved to outside is perceived.
In addition, sense part 530 is due to receiving light receiving signal, therefore the part in multiple light receivers 520 can be set,
The light receiving signal is the retainer plate that the light irradiated from light sending part 510 reflexes to wafer grinding layer or grinding head 20
The light receiving signal of the bottom surface of (retainer ring).Therefore, sense part can be in identical optical sensor 500 in eachization
Learn the light receiver that mechanical milling tech may be set to diverse location.As described above, sense part is not only configured at optical sensor 500
Outermost, but also be configured at its inner side, thus, whether some parts that can perceive optical sensor 500 exactly are located at
Whether outside wafer W downside and some other parts (Fig. 9 b hatched example areas) of optical sensor 500 are located under wafer W
On the inside of side.
As noted previously, as the light in multiple smooth irradiations of sending parts 510 of optical sensor 500 only can be extracted in exactly
The light receiving signal Lo of wafer grinding layer Le reflections, therefore can eliminate in many light receiving signals because not anti-in wafer grinding layer
The light receiving signal penetrated and can not calculate accurate wafer grinding layer thickness it is existing the problem of.Particularly, it can obtain as follows
Advantageous effects, compared with prior art, due to being optical sensor 500 that width W5 more expands, therefore even in only light
A part for sensor 500 is located at wafer W downside, and an other parts, only will be in crystalline substance in the state of the outside of wafer
The light receiving signal of first grinding layer Le reflections, also can be in wafer as the light receiving signal for calculating wafer grinding layer thickness
Accurate grinding layer thickness is obtained in fringe region.
As described above, according to the optical sensor 500 of chemical mechanical polishing device 100 of the present utility model and prior art phase
Than, also can obtain following advantage, because its width W5 more expands, thus can automatically fill up wafer W device D and
The distortion phenomenon of the light receiving signal of intermediate region B reflections.
More specifically, optical signal Li is exposed to the wafer W of rotation rule from the light sending part 510 of optical sensor 500
The position of fixed radius length, and connect in 520 couples of light receiving signal Lo in wafer grinding layer Le reflections of light receiver
Receive.
Here, being formed as 10 μm from the optical signal Li of the irradiation of optical sensor 500 and in the prior art in very small form
Degree to 20 μm are different, as shown in figure 11, by proper alignment in wafer W device D with including more than one exaggerated
The point SP of size exposes to grinding layer Le.Here, in order to which device D is manufactured into semiconductor element or component, and referred to as installation
In wafer W unit.Thus, on device D surface, while by technique for making semiconductor subassembly, it is formed with use
In the structure for playing itself function, and form the surface with bumps 99.
Here, the point region SP irradiated from the light sending part 510 of optical sensor 500 diameter ds and device D width Wd
And more than any one in length Ld compare, formed in bigger form.Preferably, the point region SP of optical sensor 500 is formed
To may be such that a device D is arranged at the size of inside.
As described above, compared with device D area (Wd*Ld), the optical signal Li of optical sensor 500 point will be come from
Region SP size amplifies to be formed in bigger form, and is formed as may be such that a device D is wholy set in optical sensor
500 point region SP inside form and dimension (for example, a diameter of more than 1 inch circle or catercorner length for 1 inch with
On rectangle), with this, wafer grinding layer Le reflect light receiving signal Lo in be also definitely included in device D where area
The light receiving signal of domain reflection.Thus, though an optical signal Li part incurred loss in the region where device D or
Diffusing reflection and causing cannot function as light receiving signal Lo and receive to optical sensor, also cause unrelated with optical signal Li irradiation position
Ground incurs loss in light receiving signal Lo or the amount of optical signal of the diffusing reflection without receiving becomes uniform.
Thus, as shown in figure 11, can be from light receiving signal if the point region SP of the area of amplification is incident upon grinding layer Le
Lo perceives the thickness of grinding layer exactly, the light receiving signal Lo by the surface Se reflections in grinding layer Le reflected light Lo1
Constituted with the reflected light Lo2 of the inboard boundary Si reflections in grinding layer Le.
In addition, being circular situation in the optical signal Li irradiated from optical sensor 500 point region SP as shown in fig. 11a
Under, it can be caused the intermediate region B's being formed between device D somewhat to produce variation comprising width according to point SP position.As above
It is described, even if the intermediate region B's being formed at due to point SP position between device D somewhat produces variation comprising width, with
Prior art is compared, and grinding layer thickness can be also perceived exactly, but by a region SP form with similar to device D form
Form be formed as rectangle or form similarly, grinding layer thickness can more precisely be perceived with this.
Here, similar modal alteration is parallelogram form, or relative to the plate face of wafer, it is contemplated that optical signal
The track of Li movements and two sides (left and right side, or upper following) is shaped so as to curved surface.
For example, as shown in figure 11b, optical signal Li point region SP1' width dw can be defined as device D width
The size that Wd and intermediate region B width Wb are added up, and by optical signal Li point region SP1' length dl be defined as by
The size that device D length Ld and intermediate region Lb length are added up.In the case, no matter optical signal Li is present in wafer
The optional position of W plate faces, all causes at least one device D (including by separated altogether) and an intermediate region B (device D
Left and right with up and down in any one) while being arranged inside point SP'.
It is expanded, then the optical signal Li irradiated in optical sensor 500 point region SP1' width dw is defined as
By the integral multiple of device D width Wd and intermediate region B width the Wb sizes added up, and by optical signal Li point area
Domain SP1' length dl may be designated as the integral multiple of the device D length Ld and intermediate region B length Lb sizes added up.
As described above, by the optical signal Li projected from optical sensor 500 point region SP1' be formed as with device form
Similar rectangle form or parallelogram, or 2 facing sides are formed as the form replacement circle of curved surface, are passed from light
The point region SP1' that sensor 500 irradiates includes the device D and intermediate region B of defined number (being 1 in Figure 11 b) so that
Incurred loss in the region for being formed with device D or the amount of irreflexive light receiving signal remains certain, thus, it is possible to
Obtain the effect for the thickness that can more precisely obtain wafer grinding layer.
The control unit 700 is obtained exposing to wafer grinding layer Le back reflections with point region SP, SP' of amplification and received extremely
The light receiving signal Lo of the light receiver 520 of optical sensor 500 transmission so that the light receiving signal Lo reflected in large area
Value equalization, so as to perceive grinding layer Le thickness.Here, equalization be not limited to it is pair relative with point SP, SP' positions
The multiple light-receiving data answered carry out arithmetic average, but can carry out geometric average, or including by except maximum and most
Value beyond a part for small value is come to average concept to carry out the statistical method of arithmetic average or progress geometric average etc.
The known all methods extracted.
In addition, 700 pairs of the control unit is received to the first light receiving signal of the sense part 530 of optical sensor 500 and carried out
Receive, only in the state of optical sensor 500 is located at wafer W downside, to serve as from light sending part 510 so that light Li is carried out
The form of the starting device (trigger) of irradiation is controlled, and obtains receiving to the light receiving signal Lo of light receiver 520
Transmission, thus calculate wafer grinding layer thickness distribution.Accordingly, due to receiving to the light receiver of optical sensor 500
The 520 all signals reflected in wafer grinding layer of light receiving signal, therefore the thickness of wafer grinding layer can be accurately obtained.
Or, the control unit 700 will receive the first light receiving signal to the sense part 530 of optical sensor 500 with connecing
Receive to the light receiving signal of light receiver 520 and map to identical time shaft, so as to receive to many light of light receiver 520
Receive in signal only can also calculate wafer grinding thickness from the light receiving signal of the time bandwidth reflected in wafer grinding layer
Degree distribution.
In addition, as shown in figure 9b, situation about being uniformly dispersed in the sense part 530 of optical sensor 500 (including be not located at
The situation of central portion) under, the part (hatched example areas) for whether there was only optical sensor 500 can be perceived exactly to be located under wafer
Side.It can thus be concluded that to following advantageous effect, control unit 700 is only connect by the light in the light receiver 520 on the downside of wafer
Collect mail number, calculate the thickness of wafer, determined during thus initially entering the time to the downside of wafer with optical sensor 500
Light receiving signal based on, the grinding layer thickness in wafer fringe region can be accurately obtained.
As described above, available such as according to the chemical mechanical polishing device of the one embodiment of the present utility model constituted
Favourable effect down so that optical signal Li is incident upon wafer W grinding layer Le, and by the light point area SP of optical sensor 500,
SP' size amplifies to be formed in the bigger form of the size than device, and 500 pairs of the optical sensor connects in the wafer W light reflected
Collection of letters Lo is received, and is definitely included in this in the light receiving signal Lo that wafer grinding layer Le reflects where device
The light receiving signal of region reflection, thus, even if incurred loss in the region where device due to a part for optical signal or
Diffusing reflection is from without by light-receiving to optical sensor, also may be such that the irradiation position with optical signal Li is independently believed in light-receiving
Number Lo incurs loss or the amount of optical signal of the diffusing reflection without receiving becomes uniform, and in order in cmp
The thickness te of wafer grinding layer is measured in technique, and the position of light due to exposing to grinding layer Le can be eliminated and led
The existing error of generation measured value difference is caused, and grinding layer and the light receiving signal reflected are incident upon from the area of amplification
Lo perceives grinding layer Le thickness exactly.
In addition, in the utility model so that a part 530 for the light receiver 520,530 of optical sensor 500 be (Fig. 9 b's
520 part) downside that whether is located at wafer W to a certain extent to optical sensor 500 perceives, and only will be
The light receiving signal for the light that light sending part 510 positioned at wafer W downside irradiates is used to calculate grinding layer thickness, is obtained with this
Advantage is, in the overall region through the fringe region including wafer W, can accurately obtain the thickness of wafer grinding layer.
More than, preferred embodiment of the present utility model is illustrated, but scope of the present utility model is not only limited
Due to specific embodiment as described above, appropriate change can be carried out in the category described in claim.
Label declaration
10：Grinding flat plate 11：Grinding pad
20：Grinding head 30：Adjuster
40：Lapping liquid supply unit 500：Optical sensor
510：Light sending part 520：Light receiver
700：Control unit SP, SP'：Point region
W：Wafer Le：Grinding layer
D：Device B：Intermediate region
Li：Optical signal Lo：Light receiving signal
Claims (10)
1. a kind of chemical mechanical polishing device, its as in order to make multiple devices and to described device with interval intermediate region journey
The chemical mechanical polishing device that the grinding layer of the wafer of the form configuration of degree spacing is ground, the chemical mechanical polishing device
It is characterised by, including：
Grinding flat plate, it carries out rotation in the form of the grinding pad that the grinding layer of the wafer is contacted covers face thereon；
Optical sensor, it is fixed on the grinding flat plate and rotated together with the grinding flat plate, and is provided with light sending part
With light receiver, the smooth sending part exposes to multiple optical signals the grinding layer of the wafer, the multiple optical signal
The point region occupied is formed as with the width of described device diameter bigger compared with more than any one in length, and the light connects
Receipts portion receives light receiving signal, and the light receiving signal is that the optical signal irradiated in the smooth sending part reflects in the grinding layer
's；
Control unit, it obtains the grinding layer thickness of the wafer from the light receiving signal received in the light receiver, and
And the downside whether optical sensor is located at the wafer, first light receiving signal are perceived by the first light receiving signal
It is that a part of sense part from as the light receiver is obtained.
2. chemical mechanical polishing device according to claim 1, it is characterised in that
Whether the state for the downside for being located at the wafer is perceived a part of the sense part to the optical sensor.
3. chemical mechanical polishing device according to claim 1, it is characterised in that
The point region of light is configured to be formed with the width of described device diameter bigger compared with more than any one in length, institute
State what is just irradiated from the smooth sending part of the optical sensor.
4. chemical mechanical polishing device according to claim 1, it is characterised in that
The point region of light is that a device can be located to the shape inside the point, described just from described in the optical sensor
The irradiation of light sending part.
5. chemical mechanical polishing device according to claim 3, it is characterised in that
The spot diameter of light is more than 1 inch, described just from the smooth sending part irradiation of the optical sensor.
6. chemical mechanical polishing device according to claim 3, it is characterised in that
The width in described region is defined as the size for adding up the width of the width of described device and the intermediate region
Integral multiple, the length legislations of the point of the optical signal are to have added the length of the length of described device and the intermediate region
The integral multiple for the size come.
7. chemical mechanical polishing device according to claim 6, it is characterised in that
Described form of the optical signal is formed as similar to the rectangle by described device to the intermediate region altogether
Form.
8. chemical mechanical polishing device as claimed in any of claims 1 to 7, it is characterised in that
The control unit is controlled in following form to the optical sensor, by the sense part only in the optical sensor
The light receiving signal is received during the downside of the wafer.
9. chemical mechanical polishing device as claimed in any of claims 1 to 7, it is characterised in that
The light receiver is received during grinding pad rotation is turned around to the light receiving signal；
Also include：Control unit, it is located at the time number of the downside of the wafer to the optical sensor by the sense part
According to being received, and the light receiving signal received in the light receiver and the time data mapped to identical
Time shaft, and by the optical sensor be located at the wafer downside part the light receiving signal to perceive
State the thickness of grinding layer.
10. chemical mechanical polishing device as claimed in any of claims 1 to 7, it is characterised in that
Also include control unit, the control unit is received to the light receiving signal of the optical sensor so that light receiving signal
Equalization, so as to perceive the thickness of the grinding layer.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2015-0149349 | 2015-10-27 | ||
| KR1020150149349A KR101655076B1 (en) | 2015-10-27 | 2015-10-27 | Chemical mechanical polishing apparatus |
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| CN206536347U true CN206536347U (en) | 2017-10-03 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201620998256.0U Active CN206536347U (en) | 2015-10-27 | 2016-08-30 | Chemical mechanical polishing device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115122230A (en) * | 2021-03-11 | 2022-09-30 | 中国科学院微电子研究所 | Polishing head, polishing apparatus, and polishing method |
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| WO2023106517A1 (en) * | 2021-12-07 | 2023-06-15 | 에스케이실트론 주식회사 | Device for measuring wafer polishing amount, and measurement method therefor |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2001225262A (en) * | 2000-02-18 | 2001-08-21 | Nikon Corp | Polishing state measuring device and measuring method |
| JP2004363201A (en) * | 2003-06-03 | 2004-12-24 | Matsushita Electric Ind Co Ltd | Method and equipment for polishing wafer |
| KR101469437B1 (en) * | 2012-12-24 | 2014-12-05 | 주식회사 케이씨텍 | Device of measuring wafer metal layer thickness in chemical mechanical polishing apparatus and method thereof |
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| CN115122230A (en) * | 2021-03-11 | 2022-09-30 | 中国科学院微电子研究所 | Polishing head, polishing apparatus, and polishing method |
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| KR101655076B1 (en) | 2016-09-22 |
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