CN115117206A - Manufacturing method of photovoltaic module, battery string and photovoltaic module - Google Patents

Manufacturing method of photovoltaic module, battery string and photovoltaic module Download PDF

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Publication number
CN115117206A
CN115117206A CN202211044155.6A CN202211044155A CN115117206A CN 115117206 A CN115117206 A CN 115117206A CN 202211044155 A CN202211044155 A CN 202211044155A CN 115117206 A CN115117206 A CN 115117206A
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battery
crystalline silicon
manufacturing
temperature
photovoltaic module
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CN115117206B (en
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陈世庚
杨勇
葛启飞
韩卓振
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Suzhou Calf Automation Equipment Co ltd
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Suzhou Calf Automation Equipment Co ltd
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Priority to CN202211044155.6A priority Critical patent/CN115117206B/en
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Application granted granted Critical
Publication of CN115117206B publication Critical patent/CN115117206B/en
Priority to PCT/CN2023/088158 priority patent/WO2023138709A1/en
Priority to KR1020237020396A priority patent/KR102624958B1/en
Priority to EP23728573.9A priority patent/EP4246599A4/en
Priority to US18/333,238 priority patent/US11876146B2/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1876—Particular processes or apparatus for batch treatment of the devices
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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    • C09J7/00—Adhesives in the form of films or foils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/048—Encapsulation of modules
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/048—Encapsulation of modules
    • H01L31/0481—Encapsulation of modules characterised by the composition of the encapsulation material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
    • H01L31/0512—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module made of a particular material or composition of materials
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
    • H01L31/0516—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module specially adapted for interconnection of back-contact solar cells
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    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract

The invention provides a manufacturing method of a photovoltaic assembly, a battery module, a battery string and the photovoltaic assembly, wherein the manufacturing method comprises the steps of covering an isotropic polymer material layer on the outer surface of a crystalline silicon battery piece with a welding strip, and heating to enable the welding strip to be bonded on the crystalline silicon battery piece to obtain the battery module; and a battery array assembled by a plurality of battery modules realizes ohmic contact between the solder strip and the grid line through a laminating process, and meanwhile, the polymer material is converted into a filling layer to complete the encapsulation of the front and the rear sealing plates, so that the photovoltaic module is obtained. Compared with the prior art, the manufacturing method has the advantages that the bonding of the welding strip and the packaging of the photovoltaic module are realized by only using a thin membrane, the good bonding property and stability are ensured, the electrical connection performance between the welding strip and the crystalline silicon battery piece is not influenced, the front side and the back side are not required to be distinguished, the working procedures are simplified, the materials are saved, the cost is reduced, and the integral light transmission of the photovoltaic module is not influenced.

Description

Manufacturing method of photovoltaic module, battery string and photovoltaic module
Technical Field
The invention belongs to the field of solar cells, and relates to a manufacturing method of a photovoltaic module, a cell string and the photovoltaic module.
Background
At present, in the manufacturing process flow of a solar cell photovoltaic module, welding and lamination are two links; the welding refers to a process of serially assembling single battery plates (crystalline silicon battery plates) through welding strips (cross-linking strips), so that the overall output voltage of the assembly can be improved; and further connecting the welded battery strings in series and parallel to form a battery array, and then packaging through a laminating process to form the photovoltaic module.
In the process of manufacturing the series-connected battery pieces, the method for bonding the welding strip on the battery pieces by using the membrane has unique advantages, flexible connection can be formed, and compared with the common thermal welding in the prior art, the method is closer to a stress-free connection mode, so that the problems of battery piece cracking and battery piece hidden cracking cannot be caused in the manufacturing process; however, in the existing film bonding technology, the used films are all of a structure of two or more layers formed by stacking or connecting different polymers, wherein the innermost layer for directly contacting with the welding strip and the battery piece has high adhesiveness, and the outermost layer has low adhesiveness or no adhesiveness; therefore, when the membrane is used in the processing process of the battery string, the front side and the back side of the membrane need to be further distinguished, only one side with high adhesion can be bonded with the battery piece correctly, and the process is relatively complex. Moreover, the films formed from two or more layers of polymer materials used in the prior art are inherently expensive to manufacture and use, resulting in increased overall manufacturing costs for the photovoltaic module.
In view of this, it is urgently needed to develop a new technical scheme with low cost and simple operation, so that the welding strip and the battery piece are well adhered, the process is simplified, the cost is reduced, and the battery assembly with high yield is obtained.
Disclosure of Invention
In view of the problems in the prior art, the present invention aims to provide a method for manufacturing a photovoltaic module, a battery string and a photovoltaic module, wherein the method comprises the steps of covering an isotropic polymer material on the outer surface of a crystalline silicon battery piece with a solder strip, and heating to adhere the solder strip to the crystalline silicon battery piece to obtain the battery module; and a battery array assembled by a plurality of battery modules realizes ohmic contact between the solder strip and the grid line through a laminating process, and meanwhile, the polymer material is converted into a filling layer to complete the encapsulation of the front and the rear sealing plates, so that the photovoltaic module is obtained. Compared with the prior art, the manufacturing method has the advantages that the bonding of the solder strip and the packaging of the photovoltaic module are realized by only using the thin film, the good bonding property and stability are guaranteed, meanwhile, the electrical connection performance between the solder strip and the crystalline silicon battery piece is not influenced, the front side and the back side do not need to be distinguished, the working procedures are simplified, the materials are saved, the cost is reduced, and the integral light transmission of the photovoltaic module is not influenced.
In order to achieve the purpose, the invention adopts the following technical scheme:
in a first aspect, the present invention provides a method of manufacturing a photovoltaic module, the method comprising the steps of:
(1) arranging a welding strip at a position corresponding to the surfaces of one side or two sides of a crystalline silicon cell, covering a polymeric material on the outer surface of the crystalline silicon cell with the welding strip, heating at a first temperature to bond the polymeric material with the surface of the crystalline silicon cell, and fixing the welding strip on the crystalline silicon cell to obtain a cell module;
sequentially or simultaneously manufacturing a plurality of battery modules which are connected in series by the welding strips to form battery strings, and then connecting the plurality of battery strings in series and/or in parallel through bus bars to form a battery array;
the polymer material is an isotropic homogeneous membrane made of a single substance;
(2) respectively laying a front sealing plate and a rear sealing plate on the outer surfaces of the front side and the rear side of the battery array obtained in the step (1) to obtain a laminated body;
(3) laminating the laminated body obtained in the step (2) at a second temperature, melting the brazing layer of the welding strip, and welding the brazing layer with the grid line on the crystalline silicon battery piece to form ohmic contact; and forming the polymer material into a filling layer to encapsulate the cell array to obtain the photovoltaic module.
In the prior art, the film used in the bonding process is composed of two layers of materials with different materials, wherein the lower layer of material in contact with the solder strip has a higher viscosity than the upper layer of material, and the upper layer of material has a lower viscosity, so that it is necessary to continuously arrange an adhesive material layer for encapsulation on the upper layer of material before the subsequent lamination process. The manufacturing method can complete the bonding of the solder strip and the crystalline silicon battery piece and the subsequent sealing plate packaging only by arranging a layer of polymeric material, wherein the polymeric material is an isotropic homogeneous membrane formed by a single substance, namely, the physical properties such as viscosity, fluidity and the like do not change along with the size and the position in the membrane layer, and the bonding property of the front surface and the back surface of the membrane layer is the same; compared with the prior art, the thickness is effectively reduced, the cost is reduced, the front side and the back side do not need to be distinguished when the device is used, the complexity of the working procedures is reduced, the process error rate is reduced, the filling layer converted from a single polymer material after the laminating process has high uniformity and permeability, and the optical gain of the device is facilitated.
The manufacturing method of the invention does not need to set a process of welding the welding strip on the crystalline silicon cell, only needs to place the welding strip at the position of the grid line on the surface of the crystalline silicon cell and cover the polymeric material, and enables the polymeric material to simultaneously coat the welding strip and the crystalline silicon cell by heating, thereby enabling the welding strip to be effectively and firmly pre-bonded on the crystalline silicon cell and making a foundation for the polymeric material to form a filling layer in the subsequent lamination process; heating and applying pressure in the laminating process, melting the brazing layer on the surface layer of the welding strip and forming metallized connection with the grid line, extruding the polymer material by heating to generate crosslinking effect, increasing the fluidity and filling each gap inside, and completely bonding the front and rear sealing plates on the crystalline silicon battery piece to realize packaging; in the process, due to the fact that the pre-bonding of the welding strip is achieved in advance, the position of the welding strip is fixed, when pressure is applied again, the welding strip can only be attached to the surface of the main grid in the original position, deviation cannot be caused, the melted brazing layer can be in good ohmic contact with the grid line, the polymer material cannot easily enter the position between the welding strip and the crystalline silicon battery piece, and the problem of electrical insulation caused by poor contact of the welding strip due to the polymer material is solved.
It should be noted that, because the polymer material used in the manufacturing method of the present invention is an isotropic homogeneous material, and the adhesion of the surfaces on both sides is the same, in the actual production, it is preferable to perform multi-point mechanical gripping on the polymer material to realize the gripping and automatic production of the battery module, the battery string and the battery array; specifically, the multi-point mechanical gripping is multi-point contact gripping performed by a manipulator provided with an anti-adhesion coating; in the multi-point contact grabbing, the area of each contact point is less than or equal to 5% of the total area of the grabbing surface of the grabbing object, and the total contact area is greater than or equal to 85% of the total area of the grabbing surface of the grabbing object; the anti-sticking coating comprises any one or the combination of at least two of AF, FEP, FER, NXT, PFA, PTEE and ceramic coating; through the cooperation of multi-contact and antiseized layer, the adhesion of the face of grabbing and the mechanical tongs of better prevention polymerization material.
It should be further noted that the specific process sequence of manufacturing the battery string by using the battery modules in the present invention can be adjusted according to actual conditions, specifically, a plurality of independent battery modules can be prepared first, and then the battery modules are connected in series by using the welding strips to obtain the battery string; the crystal silicon battery plates which are sequentially arranged can be directly connected in series by directly using the welding strip, then corresponding polymer materials are arranged, and after uniform heating is carried out at the first temperature, the battery string is directly formed.
In a preferred embodiment of the present invention, the softening point of the polymer material is equal to or lower than the first temperature < the melting point of the brazing layer of the solder ribbon is equal to or lower than the second temperature.
When the softening point of the polymeric material is less than or equal to the first temperature, the polymeric material can generate certain heat adhesiveness by heating at the first temperature, the adhesion property of the polymeric material ensures that the polymeric material is adhered to the crystalline silicon battery piece and fixes the welding strip, and after the heating is finished, the polymeric material is gradually cooled, is recovered to the original crosslinking degree and is solidified, and the welding strip is firmly locked at the position corresponding to the grid line; because the polymeric material needs to be melted to have good fluidity during lamination, the melting point of the polymeric material is preferably equal to or lower than the second temperature so as to ensure the quality of the filling layer formed by lamination.
In a preferred embodiment of the present invention, the first temperature in step (1) is 70 to 130 ℃ and does not contain 130 ℃, for example, 70 ℃, 75 ℃, 80 ℃, 85 ℃, 90 ℃, 95 ℃, 100 ℃, 105 ℃, 110 ℃, 115 ℃, 120 ℃, 125 ℃, or 129 ℃, and the second temperature in step (3) is 130 to 170 ℃, for example, 130 ℃, 135 ℃, 140 ℃, 145 ℃, 150 ℃, 155 ℃, 160 ℃, 165 ℃, or 170 ℃, but is not limited to the values listed, and other values not listed in the above range of values are also applicable.
In order to ensure that the welding strip can be coated on the surface of the crystalline silicon battery piece by the polymeric material, so that good bonding is realized, and meanwhile, the contact condition of the welding strip and the crystalline silicon battery piece is not further damaged, the polymeric material is limited to be bonded at a low temperature, namely, the polymeric material is heated at the first temperature in the step (1) of the invention, preferably at a low temperature, and when the temperature is lower, the flowability of the polymeric material is very small, the polymeric material cannot enter a gap between the welding strip and the crystalline silicon battery piece, but the welding strip and the surface of the crystalline silicon battery piece can be well coated, so that the welding strip is bonded and fixed; the temperature of the low-temperature heating is preferably 70-130 ℃ and does not contain 130 ℃, correspondingly, the welding strip is a low-temperature welding strip, the melting point of a brazing layer of the low-temperature welding strip is 130-170 ℃, so that the brazing layer of the low-temperature welding strip is not melted at the first temperature, but can be melted at the second temperature of the step (3) and forms metallized connection with the corresponding grid line; accordingly, the polymeric material only develops some thermal adhesion at the first temperature to achieve effective bonding and secure the solder ribbon, and only melts and attains good flow at the second temperature to fill the gaps in the battery array.
The brazing layer of the low-temperature welding strip can be made of alloy formed by tin, lead, silver, bismuth, antimony and gallium, and the low-temperature welding strip has the advantage of low cost; or the tin-lead-indium-based solder alloy at least comprises tin, lead, indium and gallium, and has higher cost but lower melting point temperature; the low-temperature solder strip can be selected by a person skilled in the art according to actual conditions and needs, but the melting point temperature of the brazing layer of the selected low-temperature solder strip is 130-170 ℃.
In a preferred embodiment of the present invention, the heating at the first temperature in step (1) is performed for 1 to 5 seconds, for example, 1s, 1.2s, 1.4s, 1.6s, 1.8s, 2s, 2.2s, 2.4s, 2.6s, 2.8s, 3s, 3.2s, 3.4s, 3.6s, 3.8s, 4s, 4.2s, 4.4s, 4.6s, 4.8s, or 5s, but is not limited to the above-mentioned values, and other values not listed in the above-mentioned range of values are also applicable.
As a preferable technical solution of the present invention, the step (1) further includes applying a pressure to the polymer material toward the crystalline silicon battery piece during heating at the first temperature, and after the heating is completed, performing air-blowing cooling on the polymer material to complete the adhesion of the polymer material to the surface of the crystalline silicon battery piece.
It should be noted that, the higher the first temperature in step (1), the shorter the heating time should be, so as to prevent the degree of crosslinking and the flowability of the polymeric material from changing too much, and the polymeric material needs to be cooled immediately after the heating is completed, preferably, the polymeric material is cooled by blowing air, so that the polymeric material is rapidly restored to the original state, thereby achieving the rapid fixation of the solder strip, avoiding the problem that the solder strip moves due to the insecure bonding caused by slow cooling, and meanwhile, the rapid cooling is also beneficial to the smooth operation of the grabbing process of the battery module, and ensuring the stable and continuous production of the battery string and the battery array assembly process.
In a preferred embodiment of the present invention, before the cell array is obtained in step (1), the thickness of the polymer material on the same side of the cell module is 0.02 to 0.6mm, for example, 0.02mm, 0.03mm, 0.04mm, 0.05mm, 0.06mm, 0.07mm, 0.08mm, 0.09mm, 0.1mm, 0.15mm, 0.2mm, 0.25mm, 0.3mm, 0.35mm, 0.4mm, 0.45mm, 0.5mm, 0.55mm, or 0.6mm, but is not limited to the above-mentioned values, and other values not listed in the above-mentioned value range are also applicable.
The thicker the polymeric material used in the present invention is in the preferred range, the better the wrapping of the solder strip and the more secure the adhesion to the crystalline silicon cell, while better filling the area other than the overlap of the solder strip and the cell during lamination.
As a preferred technical solution of the present invention, the step (1) further comprises additionally laying the polymer material in the obtained battery array to achieve complete filling of the void.
Preferably, the complementary laying comprises arranging strips, blocks, nets of the polymeric material in the interstices and/or adding the entire sheet of the polymeric material to cover the surface of the battery array;
and after the polymer material is additionally laid, the total thickness of the polymer material on the same side in the battery array in the step (1) is 0.4-0.6 mm, such as 0.4mm, 0.42mm, 0.44mm, 0.46mm, 0.48mm, 0.5mm, 0.52mm, 0.54mm, 0.56mm, 0.58mm or 0.6mm, but is not limited to the values listed, and other values not listed in the above numerical range are also applicable.
In the step (1) of the invention, in a battery string composed of a plurality of battery modules and a battery array composed of a plurality of battery strings, one side or two side surfaces of each crystalline silicon battery piece, which is attached with a welding strip, are covered with the polymeric material, and meanwhile, the polymeric material is preferably additionally paved at the joint of the welding strip and/or the bus bar and the gap between the battery modules, so that a filling layer formed by the cross-linking and fusing of the polymeric material is more uniform and complete without redundant pores and bubbles in the subsequent lamination process; the additionally laid polymer material is preferably in a strip shape, a block shape, a net shape and the like so as to be filled in each gap, and is close to the horizontal height of the polymer material which is originally existed, the whole body is a layer, so that the material is saved and the cost is reduced, and/or a large sheet of whole layer of polymer material is additionally arranged to be covered and laid, and is positioned at the outer side of the polymer material which is originally existed, so as to form a layer of new polymer material; however, it should be emphasized that, no matter how the replenishment is performed, the total thickness of the polymeric materials on the same side should be limited, and preferably the total thickness is 0.4-0.6 mm, so that the finally formed filling layer is uniform and complete without being too thick, and unnecessary loss is caused; the above-mentioned polymeric materials are all isotropic homogeneous films made of a single substance, and are completely the same as the materials of the existing polymeric materials.
As a preferred technical scheme of the invention, the polymeric material in the step (1) comprises any one of PVB, EVA, POE, POM, PVD, TPO, TPU or PA; wherein PVB refers to polyvinyl butyral, EVA refers to ethylene-vinyl acetate copolymer, POE refers to polyolefin elastomer, POM refers to polyformaldehyde resin, PVD refers to polyvinylidene chloride, TPO refers to thermoplastic polyolefin, TPU refers to thermoplastic polyurethane elastomer, and PA refers to polyamide.
According to the invention, a thermoplastic resin material is preferably used as the polymeric material, such as a PVB adhesive film formed by PVB and a plasticizer, the PVB adhesive film has the characteristics of recyclability, secondary processing and reusability, and under the action of a certain pressure within the low-temperature bonding temperature range defined by the invention, the PVB adhesive film can keep the original form and cannot generate body type condensation polymerization, so that the problem of position movement of a welding strip caused by the film condensation polymerization due to heating during the preparation of a battery string or a photovoltaic module can be prevented.
As a preferable technical solution of the present invention, the step (3) further includes assembling the obtained battery assembly.
Preferably, the assembly comprises a mounting frame and a mounting junction box.
Preferably, the front sealing plate and the rear sealing plate in the step (2) are made of glass and/or high molecular polymer.
In a second aspect, the present invention provides a battery module produced according to the manufacturing method of the first aspect.
In a third aspect, the present invention provides a battery string produced by the manufacturing method according to the first aspect.
In a fourth aspect, the present invention provides a photovoltaic module produced according to the method of manufacture of the first aspect.
Compared with the prior art, the invention at least has the following beneficial effects:
(1) compared with the prior art, the invention only uses a layer of isotropic homogeneous polymer material formed by single substances as the bonding film, thereby effectively reducing the thickness and the cost, and when in use, the front and the back sides do not need to be distinguished, the high-quality bonding of the welding strip and the crystalline silicon battery piece is realized by lower cost and more simplified procedures, and the error of the bonding procedure is avoided;
(2) the manufacturing method does not need to set a process of welding the welding strip on the crystalline silicon battery piece, and directly utilizes a layer of polymer material to complete the bonding of the welding strip at low temperature and then carry out the laminating packaging of the device, thereby avoiding the insulation problem of the welding strip caused by the polymer material entering between the welding strip and the crystalline silicon battery piece while ensuring the bonding stability between the welding strip and the crystalline silicon battery piece; because the same polymer material is used for bonding and laminating, the high-temperature-resistant high-performance optical fiber has high uniformity and transmittance and is beneficial to improving the optical gain of a device.
Drawings
Fig. 1 is a view of a battery module obtained in step (1) of example 1 of the present invention, taken along the width direction of a solder ribbon;
fig. 2 is a schematic structural diagram of the battery string obtained in step (1) in example 1 of the present invention;
fig. 3 is a view of one cell module in the photovoltaic module obtained in step (3) of example 1 of the present invention along the width direction of the solder ribbon;
fig. 4 is a view of the battery module obtained in step (1) of example 2 of the present invention, taken along the width direction of the solder ribbon;
FIG. 5 is a view of the battery module obtained in step (1) of example 2 of the present invention, taken along the length of the solder ribbon;
fig. 6 is a schematic structural diagram of the battery string obtained in step (1) in example 2 of the present invention;
fig. 7 is a view of one cell module in the photovoltaic module obtained in step (3) of example 2 of the present invention, along the width direction of the solder ribbon;
FIG. 8 is a schematic representation of a PVB strip additionally laid in step (1) of example 3 of the present invention;
FIG. 9 is a schematic representation of a PVB web additionally laid in step (1) of example 4 of the present invention;
in the figure: the solar cell comprises a 1-crystalline silicon cell, 2-solder strips, 3-polymer materials, 4-filling layers, 5-front sealing plates and 6-rear sealing plates.
Detailed Description
The technical scheme of the invention is further explained by the specific implementation mode in combination with the attached drawings. It should be understood by those skilled in the art that the examples are only for the understanding of the present invention and should not be construed as the specific limitations of the present invention.
The front sides of the battery modules, the battery strings, the battery arrays and the photovoltaic modules are referred to as light receiving surfaces (light receiving surfaces), and the back sides or the back sides of the battery modules, the battery strings, the battery arrays and the photovoltaic modules are referred to as backlight surfaces opposite to the front sides.
The solder strips used in the following examples and comparative examples are the same solder strip; the melting point of a brazing layer of the welding strip is 138-169 ℃, the copper content of a base material is more than or equal to 99.96%, the welding strip is suitable for a low-temperature welding process of a cell, the hidden crack risk of the cell can be reduced, the welding strip is more suitable for a flaked and large-size silicon wafer, and the loss of a component can be reduced.
Example 1
The embodiment provides a manufacturing method of a photovoltaic module, which is suitable for manufacturing a solar cell with positive and negative electrodes respectively positioned on the front and back surfaces of a crystalline silicon cell piece, and the manufacturing method comprises the following steps:
(1) a bonding process: arranging welding strips on two main grid lines on the back surface of a crystalline silicon battery piece and two main grid lines on the front surface of the adjacent crystalline silicon battery piece in sequence, connecting the two adjacent crystalline silicon battery pieces in series, preparing 15 crystalline silicon battery pieces which are connected in series in sequence, covering a layer of isotropic homogeneous PVB membrane with the thickness of 0.5mm on the outer surface of each crystalline silicon battery piece at two sides, provided with the welding strips, directly contacting and heating the PVB membrane on the surface of the crystalline silicon battery piece by using a heating workpiece, and bonding the PVB membrane at the low temperature of 70 ℃ for 3s to obtain a battery string formed by connecting 15 battery modules in series; preparing 4 battery strings which are connected in parallel through a bus bar to form a battery array;
(2) a laminating step: respectively laying a corresponding glass front plate and a corresponding polymer back plate on the front side and the back side of the battery array to obtain a laminated body;
(3) a laminating step: laminating the laminated body in the step (2) for 360 seconds in a double-sided heating laminating machine at 160 ℃, melting a tin layer of the solder strip, then performing metalized connection with a grid line to form ohmic contact, and respectively forming a front filling layer and a back filling layer on the front side and the back side to finish the packaging of the glass front plate and the polymer back plate to obtain a photovoltaic module; and installing a frame on the peripheral edge of the photovoltaic module, and installing a junction box on the polymer backboard to obtain a final product.
Fig. 1 and fig. 2 are respectively schematic structural diagrams of a battery module and a battery string obtained in step (1) in this embodiment, in the battery module, welding strips 2 are respectively disposed on front and back surfaces of a crystalline silicon battery piece 1, and outer surfaces of the welding strips 2 on the front and back surfaces are respectively covered with a polymer material 3, so that the welding strips 2 are firmly attached and bonded to the crystalline silicon battery piece 1; the battery string comprises 15 battery modules (only 4 are shown in the figure) which are sequentially arranged along a straight line, and the back welding strip 2 of the former battery module is connected with the front welding strip 2 of the adjacent latter battery module, so that the battery modules are connected in series;
fig. 3 is a schematic structural diagram of a battery module in the photovoltaic module obtained in step (3) in this embodiment, and as can be seen from the diagram, after the lamination process, the battery module includes a crystalline silicon battery piece 1, solder strips 2 are respectively disposed on the front and back surfaces of the crystalline silicon battery piece 1, a filling layer 4 formed by the polymer material 3 is disposed on the outer surface of each of the front and back surfaces of the crystalline silicon battery piece 1, and the filling layer 4 covers the exposed solder strips 2 and crystalline silicon battery piece 1, wherein a front sealing plate 5 formed by glass covers the outer surface of the filling layer 4 on the front surface, and a rear sealing plate 6 formed by a high molecular polymer covers the outer surface of the filling layer 4 on the back surface.
Example 2
The embodiment provides a manufacturing method of a photovoltaic module, which is suitable for manufacturing a full back contact type solar cell with a positive electrode and a negative electrode positioned on the back surface of a crystalline silicon cell piece at the same time, and the manufacturing method comprises the following steps:
(1) a bonding process: respectively arranging welding strips on a negative electrode main grid line on the back surface of a crystalline silicon cell and an adjacent positive electrode main grid line on the back surface of the crystalline silicon cell, connecting the two adjacent crystalline silicon cells in series, preparing 10 crystalline silicon cells which are sequentially connected in series, covering a layer of isotropic homogeneous PVB membrane with the thickness of 0.38mm on the outer surface of the back surface of each crystalline silicon cell, directly contacting a heating workpiece with the back surface of the crystalline silicon cell for heating, and bonding at low temperature of 128 ℃ for 1s to obtain a cell string formed by 10 serially connected cell modules; preparing 4 battery strings which are connected in parallel through a bus bar to form a battery array; additionally laying isotropic homogeneous PVB (polyvinyl butyral) membranes with the thickness of 0.58mm and 0.2mm on the front surface and the back surface of the battery array respectively to cover the front surface and the back surface of the battery array;
(2) a laminating step: respectively arranging a corresponding glass front plate and a corresponding polymer back plate on the front surface and the back surface of the battery array after the PVB film is additionally laid, so as to obtain a laminated body;
(3) a laminating step: laminating the laminated body in the step (2) in a single-side heating laminating machine at the temperature of 140 ℃ for 900s, forming ohmic contact by metalized connection of a tin layer of the welding strip and a grid line after melting, and forming a front-side filling layer and a back-side filling layer on the front side and the back side respectively to finish the packaging of the glass front plate and the polymer back plate to obtain a photovoltaic module; and installing a frame on the peripheral edge of the photovoltaic module, and installing a junction box on the polymer backboard to obtain a final product.
The main difference between the single-sided heater in step (3) of this embodiment and the double-sided heater in step (3) of embodiment (1) is the difference between the thermal conduction speed and the heating time.
Fig. 4, fig. 5 are schematic structural diagrams of the battery module obtained in step (1) in the embodiment, and fig. 6 is a schematic structural diagram of the battery string obtained in step (1) in the embodiment, and it can be seen from the diagrams that only the back surface of the crystalline silicon battery piece 1 in the battery module is provided with the solder strip 2, and the outer surface of the solder strip 2 is covered with the polymeric material 3, so that the solder strip 2 and the crystalline silicon battery piece 1 are firmly attached and bonded; the battery string comprises 10 battery modules (only 4 are shown in the figure) which are sequentially arranged along a straight line and have gaps, and a positive main grid line of a previous battery module is connected with a negative main grid line of an adjacent next battery module through a welding strip 2, so that the battery modules are connected in series;
fig. 7 is a schematic structural diagram of a battery module in the photovoltaic module obtained in step (3) in this embodiment, and as can be seen from the diagram, after the lamination process, the battery module includes a crystalline silicon battery piece 1, solder strips 2 are disposed on the back surface of the crystalline silicon battery piece 1, filling layers 4 formed by the polymer materials 3 are respectively disposed on the outer surfaces of the front and back surfaces of the crystalline silicon battery piece 1, wherein the outer surface of the filling layer 4 on the front surface is covered with a front sealing plate 5 formed by glass, the filling layer 4 on the back surface covers the exposed solder strips 2 and crystalline silicon battery piece 1, and the outer surface is covered with a back sealing plate 6 formed by a high molecular polymer.
Example 3
The embodiment provides a manufacturing method of a photovoltaic module, which is suitable for manufacturing a full back contact type solar cell with a positive electrode and a negative electrode positioned on the back surface of a crystalline silicon cell piece at the same time, and the manufacturing method comprises the following steps:
(1) a bonding process: respectively placing two welding strips on a positive main grid line and a negative main grid line on the back surface of a crystalline silicon battery piece, covering a layer of isotropic homogeneous PVD membrane with the thickness of 0.02mm on the outer surface of the back surface of the crystalline silicon battery piece, performing non-contact remote heating by using an infrared lamp tube, wherein the heating power is 150W, the corresponding heating temperature is about 120 ℃, the height distance from the PVD membrane is about 20mm, and performing hot pressing on the PVD membrane and the crystalline silicon battery piece for 1.5s in the process to obtain a battery module; sequentially preparing 12 battery modules which are arranged along a straight line, communicating a positive electrode main grid line of a previous battery module with a negative electrode main grid line of an adjacent next battery module by using a welding strip to obtain 12 battery strings formed by the battery modules which are sequentially connected in series, and preparing 6 battery strings which are connected in parallel by a bus bar to form a battery array; additionally laying an isotropic PVB strip with the thickness of 0.02mm on the back of the battery array, covering the exposed welding strips and bus bars as shown in FIG. 8, and filling gaps among the battery modules; additionally laying isotropic homogeneous PVB films with the thickness of 0.4mm on the front and back surfaces of the battery array to cover the front and back surfaces of the battery array;
(2) a laminating step: respectively arranging a corresponding glass front plate and a corresponding polymer back plate on the front surface and the back surface of the battery array after the PVB film is additionally laid, so as to obtain a laminated body;
(3) a laminating step: laminating the laminated body in the step (2) for 600s in a single-side heating laminating machine at the temperature of 140 ℃, forming ohmic contact by metalized connection of a tin layer of the welding strip and a grid line after melting, and forming a front-side filling layer and a back-side filling layer on the front side and the back side respectively to finish the packaging of the glass front plate and the polymer back plate to obtain a photovoltaic module; and installing a frame on the peripheral edge of the photovoltaic module, and installing a junction box on the polymer backboard to obtain a final product.
In some embodiments, when the PVB membrane is heated remotely in a non-contact manner by using an infrared lamp tube, the heating power is preferably 150-170W, and the heating time can be reduced as the power is larger, but should be more than or equal to 1 s; when heating time is less than 1s, the PVD diaphragm is difficult for with the adhesion of crystal silicon battery piece, and when power exceeded 170W, the PVD diaphragm can be rapidly polycondensation and be difficult for will welding area and the adhesion of crystal silicon battery piece.
Example 4
The embodiment provides a manufacturing method of a photovoltaic module, which is suitable for manufacturing a solar cell with positive and negative electrodes respectively positioned on the front and back surfaces of a crystalline silicon cell piece, and the manufacturing method comprises the following steps:
(1) a bonding process: respectively placing four welding strips on two main grid lines on the front side and two main grid lines on the back side of a crystalline silicon cell, covering a layer of isotropic homogeneous TPU membrane with the thickness of 0.1mm on the outer surfaces of two sides of the crystalline silicon cell, where the welding strips are arranged, directly contacting and heating a heating workpiece with a polymer material on the surface of the crystalline silicon cell, and bonding at low temperature of 105 ℃ for 3s to obtain a battery module; sequentially preparing 14 battery modules which are arranged along a straight line, enabling welding strips to be sequentially connected with main grid lines on the front surface and the back surface of an adjacent battery module to obtain 14 battery strings formed by the battery modules which are sequentially connected in series, and preparing 5 battery strings which are connected in parallel through bus bars to form a battery array; additionally laying an isotropic PVB net with the thickness of 0.5mm on the front surface and the back surface of the battery array, covering the exposed welding strips and bus bars as shown in FIG. 9, and filling gaps among the battery modules;
(2) a laminating step: respectively arranging corresponding glass front plates and polymer back plates on the front surface and the back surface of the battery array after the PVB net is additionally laid, so as to obtain a laminated body;
(3) a laminating step: laminating the laminated body in the step (2) in a double-sided heating laminating machine at 160 ℃ for 600s, forming ohmic contact by metalized connection of a tin layer of the solder strip and a grid line after melting, and forming a front filling layer and a back filling layer on the front side and the back side respectively to finish the packaging of the glass front plate and the polymer back plate to obtain a photovoltaic module; and installing a frame on the peripheral edge of the photovoltaic module, and installing a junction box on the polymer backboard to obtain a final product.
In some embodiments, an infrared lamp tube can be selected to perform non-contact remote heating on the homogeneous TPU membrane, the height distance is about 20mm, the heating power is preferably 130-140W, the heating time can be reduced as the power is larger, when the heating power is 140W, the heating time is preferably 1s, and no bubble exists between the TPU membrane and the crystalline silicon cell.
Example 5
The embodiment provides a manufacturing method of a photovoltaic module, which is suitable for manufacturing a solar cell with positive and negative electrodes respectively positioned on the front and back surfaces of a crystalline silicon cell, and the manufacturing method is completely the same as the embodiment 1 except that the thickness of the PVB membrane in the step (1) is adjusted from 0.5mm to 0.2 mm.
Example 6
The embodiment provides a manufacturing method of a photovoltaic module, which is suitable for manufacturing a solar cell with positive and negative electrodes respectively positioned on the front and back surfaces of a crystalline silicon cell, and the manufacturing method is completely the same as the embodiment 1 except that the thickness of the PVB membrane in the step (1) is adjusted from 0.5mm to 0.8 mm.
Example 7
This example provides a method for manufacturing a photovoltaic module, which is suitable for manufacturing a solar cell having positive and negative electrodes respectively on the front and back surfaces of a crystalline silicon wafer, and the manufacturing method is identical to example 1 except that the low-temperature bonding at 70 ℃ in step (1) is adjusted to be performed at 55 ℃.
Example 8
This example provides a method for manufacturing a photovoltaic module, which is suitable for manufacturing a solar cell having positive and negative electrodes respectively disposed on the front and back surfaces of a crystalline silicon wafer, and the manufacturing method is exactly the same as example 1 except that the low-temperature bonding at 70 ℃ in step (1) is adjusted to be performed at 145 ℃.
Comparative example 1
The comparative example provides a manufacturing method of a photovoltaic module, which is suitable for manufacturing a solar cell with positive and negative electrodes respectively positioned on the front and back surfaces of a crystalline silicon cell, and comprises the following steps:
(1) a bonding process: respectively placing four welding strips on two main grid lines on the front side and two main grid lines on the back side of a crystalline silicon battery piece, covering a layer of isotropic homogeneous PVB membrane with the thickness of 0.25mm on the outer surfaces of two sides of the crystalline silicon battery piece, directly contacting and heating a heating workpiece and a polymer material on the surface of the crystalline silicon battery piece, and bonding at the low temperature of 70 ℃ for 3s to obtain a battery module; sequentially preparing 15 battery modules which are arranged along a straight line, enabling welding strips to be sequentially connected with main grid lines on the front and back surfaces of adjacent battery modules, enabling gaps to be reserved between the adjacent battery modules, obtaining battery strings formed by the battery modules which are sequentially connected in series, and preparing 4 battery strings which are connected in parallel through bus bars to form a battery array; and additionally laying isotropic homogeneous TPU (thermoplastic polyurethane) membranes with the thickness of 0.25mm on the front surface and the back surface of the battery array to cover the front surface and the back surface of the battery array.
(2) A laminating step: respectively arranging a glass front plate and a polymer back plate on the front side and the back side of the battery array to obtain a laminated body;
(3) a laminating step: laminating the laminated body in the step (2) for 360 seconds in a double-sided heating laminating machine at 160 ℃, melting a tin layer of the solder strip, then performing metalized connection with a grid line to form ohmic contact, and respectively forming a front filling layer and a back filling layer with the thickness of about 0.35mm on the front side and the back side to complete the packaging of the glass front plate and the polymer back plate, so as to obtain a photovoltaic module; and installing a frame on the peripheral edge of the photovoltaic module, and installing a junction box on the polymer backboard to obtain a final product.
Comparative example 2
The comparative example provides a manufacturing method of a photovoltaic module, which is suitable for manufacturing a solar cell with positive and negative electrodes respectively positioned on the front and back surfaces of a crystalline silicon cell piece, and comprises the following steps:
(1) a bonding process: respectively placing four welding strips on two main grid lines on the front side and two main grid lines on the back side of a crystalline silicon cell, covering a layer of EVA/PVB membrane with the thickness of 0.5mm on the outer surfaces of two sides of the crystalline silicon cell, wherein the EVA layer is in direct contact with the welding strips and the crystalline silicon cell, the thickness of the EVA layer is 0.25mm, and the thickness of the PVB layer is 0.25 mm; directly contacting a heating workpiece with a polymer material on the surface of a crystalline silicon cell, heating, and bonding at a low temperature of 70 ℃ for 3s to obtain a cell module; sequentially preparing 15 battery modules which are arranged along a straight line, enabling welding strips to be sequentially connected with main grid lines on the front and back surfaces of adjacent battery modules, enabling gaps to be reserved between the adjacent battery modules, obtaining battery strings formed by the battery modules which are sequentially connected in series, and preparing 4 battery strings which are connected in parallel through bus bars to form a battery array;
(2) a laminating step: respectively arranging a glass front plate and a polymer back plate on the front side and the back side of the battery array to obtain a laminated body;
(3) a laminating step: laminating the laminated body in the step (2) for 360 seconds in a double-sided heating laminating machine at 160 ℃, melting a tin layer of the solder strip, then performing metalized connection with a grid line to form ohmic contact, and respectively forming a front filling layer and a back filling layer with the thickness of about 0.35mm on the front side and the back side to complete the packaging of the glass front plate and the polymer back plate, so as to obtain a photovoltaic module; and installing a frame on the peripheral edge of the photovoltaic module, and installing a junction box on the polymer backboard to obtain a final product.
In the embodiments 1-4 of the invention, the bonding condition of the solder strip and the crystalline silicon battery piece is good, the separation and the insulation problem of the solder strip are avoided, obvious air bubbles and gaps are not formed in the filling layer, the front sealing plate and the rear sealing plate are firmly packaged, and the obtained photovoltaic module has excellent delivery quality; compared with the embodiment 1, the embodiments 5 and 6 respectively reduce and increase the thickness of the PVB membrane, and exceed the optimal thickness value of the polymeric material on the same side in the battery array by 0.4-0.6 mm, so that the amount of PVB in the embodiment 5 is too small, gaps in the battery array are not completely filled by the filling layer, the consumption of PVB in the embodiment 6 is too much, excessive polymeric material overflows, the cleaning is complicated, and the cost is increased; examples 7 and 8 respectively reduce and raise the heating temperature (low-temperature bonding) beyond the range of the preferred temperature of 70-130 ℃, the excessively low heating temperature in example 7 causes the PVB and the crystalline silicon battery piece to be bonded insecurely and the solder strip to move easily, and the excessively high heating temperature in example 8 causes the PVB to have higher fluidity, and the PVB enters the solder strip and the crystalline silicon battery piece to cause insulation along with the continuous increase of the temperature; comparative example 1 a second film made of a different material was additionally laid in step (1), and in comparative example 2 a film made of two materials was directly used, but although the total thickness of the polymeric materials on the same side in comparative example 1 and comparative example 2 was the same as that in example 1, the two different materials could not be fused during the lamination process, thereby affecting the light transmittance of the device.
The manufacturing method disclosed by the invention has the advantages that the bonding of the solder strip and the packaging of the photovoltaic module are realized by only using a thin membrane, the electric connection performance between the solder strip and the crystalline silicon battery piece is not influenced while the good bonding property and stability are ensured, the front side and the back side are not required to be distinguished, the working procedure is simplified, the material is saved, the cost is reduced, and the integral light transmission of the photovoltaic module is not influenced.
The present invention is described in detail by the above embodiments, but the present invention is not limited to the above detailed structural features, which means that the present invention must not be implemented by the above detailed structural features. It should be understood by those skilled in the art that any modifications of the present invention, equivalent substitutions of selected components of the present invention, additions of auxiliary components, selection of specific modes, etc., are within the scope and disclosure of the present invention.
The preferred embodiments of the present invention have been described in detail, however, the present invention is not limited to the specific details of the above embodiments, and various simple modifications may be made to the technical solution of the present invention within the technical idea of the present invention, and these simple modifications are all within the protection scope of the present invention.
It should be noted that the various technical features described in the above embodiments can be combined in any suitable manner without contradiction, and the invention is not described in any way for the possible combinations in order to avoid unnecessary repetition.
In addition, any combination of the various embodiments of the present invention can be made, and the same should be considered as the disclosure of the present invention as long as the idea of the present invention is not violated.

Claims (12)

1. A method of manufacturing a photovoltaic module, the method comprising the steps of:
(1) arranging a welding strip at a position corresponding to the surfaces of one side or two sides of a crystalline silicon cell, covering a polymeric material on the outer surface of the crystalline silicon cell with the welding strip, heating at a first temperature to bond the polymeric material with the surface of the crystalline silicon cell, and fixing the welding strip on the crystalline silicon cell to obtain a cell module;
sequentially or simultaneously manufacturing a plurality of battery modules which are connected in series by the welding strips to form battery strings, and then connecting the plurality of battery strings in series and/or in parallel through bus bars to form a battery array;
the polymer material is an isotropic homogeneous membrane made of a single substance;
(2) respectively laying a front sealing plate and a rear sealing plate on the outer surfaces of the front side and the rear side of the battery array obtained in the step (1) to obtain a laminated body;
(3) laminating the laminated body obtained in the step (2) at a second temperature, melting the brazing layer of the welding strip, and welding the brazing layer with the grid line on the crystalline silicon battery piece to form ohmic contact; and forming the polymer material into a filling layer to encapsulate the cell array to obtain the photovoltaic module.
2. The manufacturing method according to claim 1, wherein a softening point of the polymeric material is not less than the first temperature < a melting point of a brazing layer of the solder ribbon is not less than the second temperature.
3. The method according to claim 1 or 2, wherein the first temperature in the step (1) is 70 to 130 ℃ and does not contain 130 ℃, and the second temperature in the step (3) is 130 to 170 ℃.
4. The method according to claim 1, wherein the heating at the first temperature in step (1) is carried out for 1 to 5 seconds.
5. The manufacturing method according to claim 1, wherein the step (1) further comprises applying pressure to the polymer material towards the crystalline silicon battery piece during heating at the first temperature, and after heating is completed, performing air blowing cooling on the polymer material to complete bonding of the polymer material and the surface of the crystalline silicon battery piece.
6. The method of claim 1, wherein the thickness of the polymeric material on the same side of the battery module is 0.02 to 0.6mm before the battery array is obtained in step (1).
7. The method of manufacturing of claim 1, wherein step (1) further comprises additionally laying the polymeric material in the resulting battery array to achieve complete filling of the voids.
8. The manufacturing method according to claim 7, wherein the complementary laying comprises arranging a strip, block, mesh of the polymeric material in the voids and/or adding the entire sheet of the polymeric material to cover the surface of the battery array;
and after the polymer materials are additionally paved, the total thickness of the polymer materials on the same side in the battery array in the step (1) is 0.4-0.6 mm.
9. The method of manufacturing of claim 1, wherein the polymeric material of step (1) comprises any one of PVB, EVA, POE, POM, PVD, TPO, TPU, or PA.
10. A battery module produced by the production method according to any one of claims 1 to 7.
11. A battery string produced by the manufacturing method according to any one of claims 1 to 7.
12. A photovoltaic module produced according to the manufacturing method of any one of claims 1 to 7.
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