CN115117187A - Silicon-based germanium detector and manufacturing process thereof - Google Patents
Silicon-based germanium detector and manufacturing process thereof Download PDFInfo
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- CN115117187A CN115117187A CN202210650959.4A CN202210650959A CN115117187A CN 115117187 A CN115117187 A CN 115117187A CN 202210650959 A CN202210650959 A CN 202210650959A CN 115117187 A CN115117187 A CN 115117187A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 149
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 149
- 239000010703 silicon Substances 0.000 title claims abstract description 149
- 229910052732 germanium Inorganic materials 0.000 title claims abstract description 75
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 title claims abstract description 75
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 82
- 238000010521 absorption reaction Methods 0.000 claims abstract description 74
- 238000000034 method Methods 0.000 claims description 9
- 230000031700 light absorption Effects 0.000 abstract description 7
- 230000003287 optical effect Effects 0.000 description 9
- 239000000463 material Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Light Receiving Elements (AREA)
Abstract
The invention provides a silicon-based germanium detector and a manufacturing process thereof, wherein the silicon-based germanium detector comprises the following steps: a substrate layer; a silicon ridge waveguide layer disposed in a central portion of said substrate layer; a germanium absorption layer overlying the silicon ridge waveguide layer; a first electrode disposed on the germanium absorption layer, a second electrode and a third electrode disposed on the substrate layer. The problem of among the prior art, reduce the width of silicon waveguide layer in order to increase the bandwidth, and then lead to the absorption of light insufficient is solved.
Description
Technical Field
The invention relates to the field of photoelectric detectors, in particular to a silicon-based germanium detector and a manufacturing process thereof.
Background
With the development of optical fiber communication systems, the development of optical devices also faces opportunities and challenges, and how to develop optical devices with excellent performance and low price has become a primary problem. Silicon-based optoelectronic devices have the advantages of easy integration, low process cost and the like, and have attracted extensive attention of researchers in recent years. Silicon (Si) material is used as a traditional material in the field of microelectronics, has incomparable advantages of other materials in processing technology and manufacturing cost, and the silicon-based photoelectron integration technology is produced at the same time. The photodetector, one of the important representative elements in silicon-based optoelectronic integration technology, functions to convert an incident optical signal into an electrical signal for analysis by subsequent signal processing circuitry. The silicon-based germanium photoelectric detector is continuously optimized in structure and further improved in performance after being developed for more than ten years.
Currently, silicon-based germanium photodetectors are mainly in the form of an epitaxial germanium absorption layer on a silicon ridge waveguide. The region of the silicon waveguide is an epitaxial region of germanium. At present, a taper region is arranged at the front section of a general detector, and the width of a silicon waveguide in the detector is widened, so that a germanium absorption layer can absorb signal light more sufficiently and the optical field distribution is more uniform (the local optical field distribution is prevented from being too strong). Broadening of the silicon waveguide layer results in an increase in the parasitic capacitance of the detector, thereby reducing its bandwidth. According to the bandwidth formula determined by the RC constant, the bandwidth of the silicon waveguide is doubled when the width of the silicon waveguide is reduced by half. However, the reduction in the width of the silicon waveguide causes a problem that the absorption region reduces the light absorption insufficiently. It can be seen that the two factors have a mutually restrictive relationship.
In view of this, the present application is presented.
Disclosure of Invention
The invention discloses a silicon-based germanium detector and a manufacturing process thereof, and aims to solve the problem that in the prior art, the width of a silicon waveguide layer is reduced for increasing the bandwidth, so that the light absorption is insufficient.
In a first aspect, the present invention provides a silicon-based germanium detector, comprising:
a substrate layer;
a silicon ridge waveguide layer disposed in a central portion of said substrate layer;
a germanium absorption layer overlying the silicon ridge waveguide layer;
a first electrode disposed on the germanium absorption layer, a second electrode and a third electrode disposed on the substrate layer.
Preferably, the germanium absorption layer comprises a top absorption layer, a first side absorption layer, and a second side absorption layer;
wherein the top absorbing layer covers the top of the silicon ridge waveguide layer, the first side absorbing layer covers the first side of the silicon ridge waveguide layer, and the second side absorbing layer covers the second side of the silicon ridge waveguide layer.
Preferably, the first electrode is disposed on the top absorbing layer, the second electrode is disposed on a first side of the substrate layer, and the third electrode is disposed on a second side of the substrate layer, wherein the first and second sides of the substrate layer are symmetric with respect to the silicon ridge waveguide layer.
Preferably, the substrate layer is a silicon substrate.
A second aspect of the invention provides a process for manufacturing a silicon-based germanium detector as defined in any one of the preceding claims, comprising:
preparing a silicon substrate;
forming a silicon ridge waveguide on the silicon substrate;
growing germanium absorption layers on the top of the silicon ridge waveguide, on the silicon substrate corresponding to the first side part close to the silicon ridge waveguide and on the silicon substrate corresponding to the second side part close to the silicon ridge waveguide simultaneously;
and growing a first electrode on the germanium absorption layer at the top of the silicon ridge waveguide, and generating a second electrode and a third electrode on the substrate layer.
Preferably, the second electrode is disposed at a first side portion of the substrate layer, and the third electrode is disposed at a second side portion of the substrate layer, wherein the first and second side portions of the substrate layer are symmetrical with respect to the silicon ridge waveguide layer.
A third aspect of the invention provides a process for manufacturing a silicon-based germanium detector as defined in any of the above, comprising:
preparing a silicon substrate;
forming a silicon ridge waveguide on the silicon substrate;
growing a first germanium absorption layer on the silicon substrate corresponding to the first side part close to the silicon ridge waveguide, and growing a second germanium absorption layer on the silicon substrate corresponding to the second side part close to the silicon ridge waveguide until the first germanium absorption layer and the second germanium absorption layer are flush with the top plane of the silicon ridge waveguide to form a top plane;
generating a top germanium absorption layer on the top plane;
growing a first electrode on the top germanium absorption layer, and generating a second electrode and a third electrode on the substrate layer.
Preferably, the second electrode is disposed at a first side portion of the substrate layer, and the third electrode is disposed at a second side portion of the substrate layer, wherein the first and second side portions of the substrate layer are symmetrical with respect to the silicon ridge waveguide layer.
Based on the silicon-based germanium detector and the manufacturing process thereof provided by the invention, the silicon ridge waveguide layer is formed on the substrate layer, and the germanium absorption layer capable of covering the silicon ridge waveguide layer is generated on the silicon ridge waveguide layer, wherein the germanium absorption layer comprises a top absorption layer covering the top of the silicon ridge waveguide layer, a first side absorption layer covering the first side of the silicon ridge waveguide layer, and a second side absorption layer covering the second side of the silicon ridge waveguide layer, and the top absorption layer, the first side absorption layer and the second side absorption layer can absorb signal light, so that the problem that in the prior art, the width of the silicon waveguide layer is reduced for increasing the bandwidth, and thus the absorption of light is insufficient is solved.
Drawings
FIG. 1 is a schematic structural diagram of a silicon-based germanium detector provided by the present invention, which is generated by the manufacturing method provided by the second aspect;
fig. 2 is a schematic structural diagram of a silicon-based germanium detector provided by the invention, which is generated by the manufacturing method provided by the third aspect.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings of the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be obtained by a person skilled in the art without any inventive step based on the embodiments of the present invention, are within the scope of the present invention. Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be obtained by a person skilled in the art without any inventive step based on the embodiments of the present invention, are within the scope of the present invention.
The following detailed description of specific embodiments of the invention refers to the accompanying drawings.
The invention discloses a silicon-based germanium detector and a manufacturing process thereof, and aims to solve the problem that in the prior art, the width of a silicon waveguide layer is reduced for increasing the bandwidth, so that the light absorption is insufficient.
Referring to fig. 1 or fig. 2, a first aspect of the present invention provides a silicon-based germanium detector, including:
a substrate layer 6;
a silicon ridge waveguide layer 5 arranged in the central part of said substrate layer 6;
a germanium absorbing 4 layer overlying the silicon ridge waveguide layer 5;
a first electrode 2 arranged on the germanium absorption 4 layer, a second electrode 1 arranged on the substrate layer 6 and a third electrode 3.
It should be noted that, the inventor finds that, at present, a front section of a general detector has a taper region, a width of a silicon waveguide in the detector is widened, and a width of the silicon waveguide in the detector is widened, so that a germanium absorption 4 layer covering the silicon waveguide has more sufficient absorption on signal light and optical field distribution is more uniform (local optical field distribution is prevented from being too strong), however, the widening of the silicon waveguide layer may increase parasitic capacitance of the detector, thereby reducing a bandwidth thereof, and in order to increase the bandwidth, in an existing silicon-based germanium photodetector, the width of the silicon waveguide layer may be selectively reduced, thereby causing a problem that an absorption region reduces optical absorption insufficiently.
In the present embodiment, by configuring the silicon ridge waveguide layer 5 on the substrate layer 6 and covering the silicon ridge waveguide layer 5 with a germanium absorption 4 layer, in particular, in one possible embodiment of the present invention, the germanium absorption 4 layer may include a top absorption layer, a first side absorption layer, and a second side absorption layer;
wherein the top absorbing layer covers the top of the silicon ridge waveguide layer 5, the first side absorbing layer covers the first side of the silicon ridge waveguide layer 5, and the second side absorbing layer covers the second side of the silicon ridge waveguide layer 5
It should be noted that the top absorbing layer, the first side absorbing layer, and the second side absorbing layer can absorb the signal light, and the absorption of the detector to the signal light can be ensured on the premise that the width of the silicon ridge waveguide layer 5 is reduced in order to reduce the bandwidth of the detector, so that the problem of insufficient light absorption in the absorption region of the detector in the prior art is solved.
In one possible embodiment of the invention, the first electrode 2 is arranged on the top absorbing layer, the second electrode 1 is arranged on a first side of the substrate layer 6, and the third electrode 3 is arranged on a second side of the substrate layer 6, wherein the first and second sides of the substrate layer 6 are symmetrical with respect to the silicon ridge waveguide layer 5.
It should be noted that the first electrode 2, the second electrode 1, and the third electrode 3 are used to be electrically connected to an external current signal extraction device, and may be matched with electrodes to convert optical signals into current signals.
In one possible embodiment of the invention, said substrate layer 6 is a silicon substrate.
It should be noted that the substrate layer 6 may also be made of other materials, such as silicon dioxide, which may be selected according to practical situations, and is not specifically limited herein, but these solutions are within the scope of the present invention.
With continued reference to fig. 1, a second aspect of the present invention provides a process for fabricating a silicon-based germanium detector, comprising:
preparing a silicon substrate;
forming a silicon ridge waveguide on the silicon substrate;
growing a germanium absorption 4 layer on the top of the silicon ridge waveguide, on the corresponding silicon substrate close to the first side part of the silicon ridge waveguide and on the corresponding silicon substrate close to the second side part of the silicon ridge waveguide simultaneously;
growing a first electrode 2 on a germanium absorption 4 layer on top of the silicon ridge waveguide, and generating a second electrode 1 and a third electrode 3 on the substrate layer 6.
It should be noted that, in this embodiment, masks are provided on the substrate and the top surface of the silicon ridge waveguide, a window is opened at a portion to be grown, and a germanium absorption 4 layer is grown on the window, and it is noted that, in this embodiment, the germanium absorption 4 layer is grown simultaneously.
In one possible embodiment of the invention, the second electrode 1 is arranged at a first side of the substrate layer 6 and the third electrode 3 is arranged at a second side of the substrate layer 6, wherein the first and second sides of the substrate layer 6 are symmetrical with respect to the silicon ridge waveguide layer 5.
With continued reference to fig. 2, a third aspect of the present invention provides a process for fabricating a silicon-based germanium detector, including:
preparing a silicon substrate;
forming a silicon ridge waveguide on the silicon substrate;
growing a first germanium absorption 4 layer on the silicon substrate corresponding to the first side part close to the silicon ridge waveguide, and growing a second germanium absorption 4 layer on the silicon substrate corresponding to the second side part close to the silicon ridge waveguide until the first germanium absorption 4 layer and the second germanium absorption 4 layer are flush with the top plane of the silicon ridge waveguide to form a top plane 7;
generating a top germanium absorption 4 layer on the top plane 7;
growing a first electrode 2 on the top germanium absorption 4 layer, and generating a second electrode 1 and a third electrode 3 on the substrate layer 6.
It should be noted that, in this embodiment, a window is opened on the mask on the silicon substrate corresponding to the first side portion close to the silicon ridge waveguide, a window is opened on the mask on the silicon substrate corresponding to the second side portion close to the silicon ridge waveguide, germanium absorption 4 layers are performed on the two windows until the germanium absorption 4 layers of the two windows are flush with the top plane of the silicon ridge waveguide, a top plane 7 is formed, a window is opened on the mask on the top plane of the silicon ridge waveguide, and the growth of the germanium absorption 4 layers is continued.
In one possible embodiment of the invention, the second electrode 1 is arranged at a first side of the substrate layer 6 and the third electrode 3 is arranged at a second side of the substrate layer 6, wherein the first and second sides of the substrate layer 6 are symmetrical with respect to the silicon ridge waveguide layer 5.
Based on the silicon-based germanium detector and the manufacturing process thereof provided by the invention, the silicon ridge waveguide layer 5 is formed on the substrate layer 6, and the germanium absorption 4 layer capable of covering the silicon ridge waveguide layer 5 is generated on the silicon ridge waveguide layer 5, wherein the germanium absorption 4 layer comprises a top absorption layer covering the top of the silicon ridge waveguide layer 5, a first side absorption layer covering the first side of the silicon ridge waveguide, and a second side absorption layer covering the second side of the silicon ridge waveguide, and the top absorption layer, the first side absorption layer, and the second side absorption layer can absorb signal light, so that the problem that in the prior art, the width of the silicon waveguide layer is reduced for increasing the bandwidth, and further the absorption of light is insufficient is solved.
The above is only a preferred embodiment of the present invention, and the protection scope of the present invention is not limited to the above-mentioned embodiments, and all technical solutions belonging to the idea of the present invention belong to the protection scope of the present invention.
Claims (8)
1. A silicon-based germanium detector, comprising:
a substrate layer;
a silicon ridge waveguide layer disposed in a central portion of said substrate layer;
a germanium absorption layer overlying the silicon ridge waveguide layer;
a first electrode disposed on the germanium absorption layer, a second electrode and a third electrode disposed on the substrate layer.
2. A silicon-based germanium detector according to claim 1, wherein said germanium absorption layer comprises a top absorption layer, a first side absorption layer, and a second side absorption layer;
wherein the top absorbing layer covers the top of the silicon ridge waveguide layer, the first side absorbing layer covers the first side of the silicon ridge waveguide layer, and the second side absorbing layer covers the second side of the silicon ridge waveguide layer.
3. A silicon-based germanium detector according to claim 1, wherein said first electrode is arranged on said top absorbing layer, said second electrode is arranged on a first side of said substrate layer, and said third electrode is arranged on a second side of said substrate layer, wherein said first and second sides of said substrate layer are symmetrical with respect to said silicon ridge waveguide layer.
4. A silicon-based germanium detector according to claim 1, wherein said substrate layer is a silicon substrate.
5. A process for fabricating a silicon-based germanium detector according to any one of claims 1 to 4, comprising:
preparing a silicon substrate;
forming a silicon ridge waveguide on the silicon substrate;
growing germanium absorption layers on the top of the silicon ridge waveguide, on the silicon substrate corresponding to the first side part close to the silicon ridge waveguide and on the silicon substrate corresponding to the second side part close to the silicon ridge waveguide simultaneously;
and growing a first electrode on the germanium absorption layer at the top of the silicon ridge waveguide, and generating a second electrode and a third electrode on the substrate layer.
6. The fabrication process of claim 5, wherein the second electrode is disposed on a first side of the substrate layer and the third electrode is disposed on a second side of the substrate layer, wherein the first and second sides of the substrate layer are symmetric about the silicon ridge waveguide layer.
7. A process for fabricating a silicon-based germanium detector according to any one of claims 1 to 4, comprising:
preparing a silicon substrate;
forming a silicon ridge waveguide on the silicon substrate;
growing a first germanium absorption layer on the silicon substrate corresponding to the first side part close to the silicon ridge waveguide, and growing a second germanium absorption layer on the silicon substrate corresponding to the second side part close to the silicon ridge waveguide until the first germanium absorption layer and the second germanium absorption layer are flush with the top plane of the silicon ridge waveguide to form a top plane;
generating a top germanium absorption layer on the top plane;
growing a first electrode on the top germanium absorption layer, and generating a second electrode and a third electrode on the substrate layer.
8. The fabrication process of claim 7, wherein the second electrode is disposed on a first side of the substrate layer and the third electrode is disposed on a second side of the substrate layer, wherein the first and second sides of the substrate layer are symmetric about the silicon ridge waveguide layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210650959.4A CN115117187A (en) | 2022-06-10 | 2022-06-10 | Silicon-based germanium detector and manufacturing process thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210650959.4A CN115117187A (en) | 2022-06-10 | 2022-06-10 | Silicon-based germanium detector and manufacturing process thereof |
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| Publication Number | Publication Date |
|---|---|
| CN115117187A true CN115117187A (en) | 2022-09-27 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210650959.4A Pending CN115117187A (en) | 2022-06-10 | 2022-06-10 | Silicon-based germanium detector and manufacturing process thereof |
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| CN (1) | CN115117187A (en) |
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- 2022-06-10 CN CN202210650959.4A patent/CN115117187A/en active Pending
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