CN115108717A - Novel bismuth-erbium co-doped quartz optical fiber preform, application and preparation method - Google Patents
Novel bismuth-erbium co-doped quartz optical fiber preform, application and preparation method Download PDFInfo
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- CN115108717A CN115108717A CN202210625144.0A CN202210625144A CN115108717A CN 115108717 A CN115108717 A CN 115108717A CN 202210625144 A CN202210625144 A CN 202210625144A CN 115108717 A CN115108717 A CN 115108717A
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B37/00—Manufacture or treatment of flakes, fibres, or filaments from softened glass, minerals, or slags
- C03B37/01—Manufacture of glass fibres or filaments
- C03B37/012—Manufacture of preforms for drawing fibres or filaments
- C03B37/01205—Manufacture of preforms for drawing fibres or filaments starting from tubes, rods, fibres or filaments
- C03B37/01225—Means for changing or stabilising the shape, e.g. diameter, of tubes or rods in general, e.g. collapsing
- C03B37/01228—Removal of preform material
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B37/00—Manufacture or treatment of flakes, fibres, or filaments from softened glass, minerals, or slags
- C03B37/01—Manufacture of glass fibres or filaments
- C03B37/012—Manufacture of preforms for drawing fibres or filaments
- C03B37/014—Manufacture of preforms for drawing fibres or filaments made entirely or partially by chemical means, e.g. vapour phase deposition of bulk porous glass either by outside vapour deposition [OVD], or by outside vapour phase oxidation [OVPO] or by vapour axial deposition [VAD]
- C03B37/01446—Thermal after-treatment of preforms, e.g. dehydrating, consolidating, sintering
- C03B37/01453—Thermal after-treatment of preforms, e.g. dehydrating, consolidating, sintering for doping the preform with flourine
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B37/00—Manufacture or treatment of flakes, fibres, or filaments from softened glass, minerals, or slags
- C03B37/01—Manufacture of glass fibres or filaments
- C03B37/012—Manufacture of preforms for drawing fibres or filaments
- C03B37/014—Manufacture of preforms for drawing fibres or filaments made entirely or partially by chemical means, e.g. vapour phase deposition of bulk porous glass either by outside vapour deposition [OVD], or by outside vapour phase oxidation [OVPO] or by vapour axial deposition [VAD]
- C03B37/01466—Means for changing or stabilising the diameter or form of tubes or rods
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B37/00—Manufacture or treatment of flakes, fibres, or filaments from softened glass, minerals, or slags
- C03B37/01—Manufacture of glass fibres or filaments
- C03B37/02—Manufacture of glass fibres or filaments by drawing or extruding, e.g. direct drawing of molten glass from nozzles; Cooling fins therefor
- C03B37/025—Manufacture of glass fibres or filaments by drawing or extruding, e.g. direct drawing of molten glass from nozzles; Cooling fins therefor from reheated softened tubes, rods, fibres or filaments, e.g. drawing fibres from preforms
- C03B37/027—Fibres composed of different sorts of glass, e.g. glass optical fibres
Abstract
The application discloses a novel bismuth-erbium co-doped quartz optical fiber preform, application and a preparation method, and relates to the field of optical fibers. The novel bismuth-erbium co-doped silica optical fiber preform adopts the silica material co-doped with erbium ions and bismuth atoms in the core layer, and the silica material are interacted with each other, so that near-infrared luminescence is obtained, and a luminescence band is widened. The novel bismuth-erbium co-doped quartz optical fiber preform is made into a device, and is applied to an optical fiber amplifier and an optical fiber laser to obtain the optical fiber amplifier and the optical fiber laser with near infrared luminescence. The novel bismuth-erbium co-doped silica optical fiber preform is prepared by combining a chelate gas phase doping technology with an improved gas phase deposition technology, and has the advantages of simple structure and operation process and easy control.
Description
Technical Field
The application relates to the field of optical fiber materials, in particular to a novel bismuth-erbium co-doped silica optical fiber preform, application and a preparation method.
Background
With the rapid development of broadband services and the continuous improvement of optical fiber communication systems, the conventional erbium-doped fiber amplifier (EDFA) has difficulty in meeting the requirements of the current optical fiber communication systems because the gain bandwidth of the rare earth material erbium cannot exceed 100 nm. It is also not feasible to compensate for this deficiency by increasing the concentration of erbium, because the presence of excess Er tends to spontaneously form clusters, causing concentration quenching. In 2001, Fujimoto et al reported the broadband luminescence properties of bismuth-doped silica materials, after which extensive research on bismuth-doped fiber materials has been conducted. In 2008, Changdong et al doped bismuth atoms in erbium-doped silica fibers found that the presence of bismuth not only inhibits erbium ion clusters and greatly improves the concentration of doped erbium ions, but also widens the light-emitting band of the fibers. Therefore, the ultra-wide range light amplification of 1100-1600nm wave band can be realized by preparing the bismuth-erbium co-doped silica fiber, the inherent limit of the gain bandwidth of the erbium-doped fiber amplifier is overcome, and the bismuth-erbium co-doped silica fiber amplifier plays an important role in improving the communication capacity.
Although there are relatively good bismuth-erbium co-doped fibers being used according to current scientific research, there are several problems to be considered in the preparation of bismuth-doped fibers: (1) the mechanism of near-infrared luminescence of bismuth is not clear, controversial, and high-valence bismuth ions are decomposed at high temperature, so that a mixture containing multiple valence bismuth, such as Bi, may be obtained 2 O 3 Is unstable at high temperature and is easily decomposed into Bi-clusterics or micro-nano particles, so that the temperature condition should be controlled reasonably. (2) The addition of a reducing agent (such as CO) can increase the near infrared radiation of the bismuth-doped glass, and the high-temperature and oxidizing environment can cause the reduction of the near infrared radiation. (3) The increase of bismuth concentration not only causes the increase of the number of bismuth ions in a non-near infrared radiation wave band, but also causes the increase of the loss of the optical fiber, and the performance of the bismuth-doped optical fiber amplifier and the laser is seriously limited. Therefore, the preparation method and process of the bismuth-erbium co-doped optical fiber should be reasonably optimized, the doping concentration should be reasonably adjusted by combining the problems of erbium ions and bismuth atoms, and the realization of efficient near-infrared luminescence is an important problem in the preparation of the bismuth-erbium co-doped silica optical fiber at present.
Disclosure of Invention
It is an object of the present application to overcome the above problems or to at least partially solve or mitigate the above problems.
According to one aspect of the present application, there is provided a novel bismuth-erbium co-doped silica optical fiber preform, comprising:
an outer layer made of silicon dioxide; and
the core layer is made of silicon dioxide material co-doped with erbium ions and bismuth atoms, and near-infrared luminescence is obtained and a luminescence band is widened through interaction between the core layer and the silicon dioxide material.
Optionally, the near infrared light emitting wavelength is 1270nm and 1530 nm.
Optionally, the erbium ions and the bismuth atoms are doped in the high purity silicon dioxide material in the core layer.
According to another aspect of the application, the application of the novel bismuth-erbium co-doped silica optical fiber preform is provided, and the novel bismuth-erbium co-doped silica optical fiber preform is made into a device and applied to an optical fiber amplifier and an optical fiber laser.
According to another aspect of the present application, there is provided a method for preparing the novel bismuth-erbium co-doped silica optical fiber preform, which is characterized by the following steps:
step 200, polishing and drying of a deposition tube: use of sulfur hexafluoride SF in high temperature aerobic environments 6 Polishing the inner wall of the quartz tube to remove impurities such as organic matters on the inner wall of the quartz tube, and heating the deposition tube by using a blast lamp to keep the deposition tube dry;
step 300 cladding deposition: high purity fluorinated SiCl 4 And oxygen O 2 Introducing the mixed gas into a high-purity quartz glass tube, and performing high-temperature heating treatment by an oxyhydrogen flame burner to make the mixed gas in the quartz glass tube generate chemical reaction, so as to generate silicon dioxide SiO on the inner surface of the quartz tube 2 The particles are granulated, the step is repeated for a plurality of times,silicon dioxide SiO 2 After the particle bodies are accumulated to a certain thickness, the temperature is raised to gradually vitrify the particle bodies,
the chemical reaction of the mixed gas in step 300 is: SiCl 4 +O 2 →SiO 2 +2Cl 2 ；
Step 400 core region deposition: with oxygen O 2 Silicon chloride SiCl as carrier gas 4 The raw materials are fed into a deposition tube, Er (thd) 3 As a chelate precursor of Er ions, carrying the Er ions into a deposition tube by helium He, and oxidizing bismuth Bi under the carrying of the helium He 2 O 3 And also enters the deposition tube, simultaneously, carbon monoxide CO enters the deposition tube to be mixed with other raw materials, the gas flow of the oxyhydrogen flame burner is adjusted to ensure that the temperature is stabilized at 1800 ℃,
the chemical reaction of the mixed gas in step 400 is: SiCl 4 +O 2 →SiO 2 +2Cl 2 、2C 33 H 57 O 6 Er+90O 2 →Er 2 O 3 +66CO 2 +63H 2 O、Bi 2 O 3 +3CO→2Bi+3CO 2 ；
Step 500 high temperature collapse: stabilizing the oxyhydrogen flame temperature at 2100 ℃, maintaining the pressure in the fixed tube at positive pressure, gradually reducing the pressure in the collapse process, and finally contracting the fixed tube into a solid bismuth erbium-doped optical fiber preform in a negative pressure state;
step 600, sleeving a preform: a layer of high-purity quartz tube with proper thickness is covered outside the prefabricated rod formed in the step 400, a vacuum pump is utilized to ensure that enough negative pressure exists in the tube in the sleeve process, and finally the novel bismuth-erbium co-doped quartz optical fiber prefabricated rod with a preset core/package ratio is manufactured.
The utility model provides a novel bismuth erbium codoped quartz fiber perform because the sandwich layer adopts the silica material of codoped erbium ion and bismuth atom, through the interact between the two to obtain near-infrared luminous, and widen the light-emitting zone. The novel bismuth-erbium co-doped quartz optical fiber preform is made into a device, and is applied to an optical fiber amplifier and an optical fiber laser to obtain the optical fiber amplifier and the optical fiber laser with near infrared luminescence. The novel bismuth-erbium co-doped quartz optical fiber preform is prepared by combining a chelate gas phase doping technology with an improved gas phase deposition technology, and has the advantages of simple structure and operation process and easiness in control.
The above and other objects, advantages and features of the present application will become more apparent to those skilled in the art from the following detailed description of specific embodiments thereof, taken in conjunction with the accompanying drawings.
Drawings
Some specific embodiments of the present application will be described in detail hereinafter by way of illustration and not limitation with reference to the accompanying drawings. The same reference numbers in the drawings identify the same or similar elements or components. Those skilled in the art will appreciate that the drawings are not necessarily to scale. In the drawings:
FIG. 1 is a schematic block diagram of a novel bismuth-erbium co-doped silica optical fiber preform according to one embodiment of the present application;
FIG. 2 is a diagram of energy level transitions of a Si-O-Bi-Er structure of a novel bismuth-erbium co-doped silica fiber according to one embodiment of the present application;
FIG. 3 is a schematic diagram of a process for fabricating a novel bismuth-erbium co-doped silica optical fiber preform according to an embodiment of the present application.
The symbols in the figures represent the following:
100 novel bismuth-erbium co-doped quartz optical fiber prefabricated rod,
10 outer layers, 20 core layers,
A-SiCl 4
B-Er(tmhd) 3
C-Bi 2 O 3
001-O 2
002-first He
003-second He
004-CO
005-a deposition tube for the deposition of the metal,
the 006-oxyhydrogen flame blowtorch,
Detailed Description
FIG. 1 is a schematic block diagram of a novel bismuth-erbium co-doped silica optical fiber preform according to one embodiment of the present application. This embodiment provides a novel bismuth-erbium co-doped silica optical fiber preform 100, which may generally include: an outer layer 10 and a core layer 20. Wherein, the material of the outer layer 10 is silicon dioxide. The core layer 20 is made of silicon dioxide material co-doped with erbium ions and bismuth atoms, and near-infrared luminescence is obtained and a luminescence band is widened through interaction between the erbium ions and the bismuth atoms.
More specifically, a small amount of erbium ions and bismuth atoms are added into the quartz fiber, and the balance position of the erbium ions and the bismuth atoms in the quartz fiber is adjusted, so that the near infrared light-emitting wavelength is about 1270nm and 1530 nm.
More specifically, in the core layer, the erbium ions and the bismuth atoms are doped in a high purity silica material.
In the calculation of table 1, the bismuth-erbium co-doped silica optical fiber material of Si — Bi — Er structure was first tested, taking into account the formation energy of bismuth atoms and erbium ions at different positions in the silica optical fiber. By calculating the formation energy of the bismuth-erbium co-doped quartz optical fiber materials with a plurality of Si-Bi-Er structures, the inventor can find that the formation energy is basically distributed in the range of 6.3 eV-6.9 eV, and the average formation energy of the optical fiber materials with the Si-Bi-Er structures is 6.53eV by averaging the formation energy. Then, the inventor considers that erbium ions and bismuth atoms are doped in a quartz optical fiber in a mode of bridging one oxygen atom, so that a bismuth-erbium co-doped quartz optical fiber material with an Si-O-Bi-Er structure is designed, formation energy calculation is carried out on a plurality of bismuth-erbium co-doped quartz optical fiber materials with Si-O-Bi-Er structures, the inventor obtains that the formation energy of the optical fiber material is in a range of-1.7 eV to-1.2 eV, and the average formation energy of the optical fiber material with the Si-O-Bi-Er structure is-1.49 eV according to the average value of the formation energy. By comparing the bismuth-erbium co-doped silica fibers with the two structures, the inventor can clearly see that the fiber material with the Si-O-Bi-Er structure is easier to form and is more stable compared with the fiber material with the Si-Bi-Er structure.
TABLE 1 formation energies of different doping structures
FIG. 2 is a diagram of the energy level transitions of the Si-O-Bi-Er structure of a novel bismuth-erbium co-doped silica fiber according to one embodiment of the present application.In FIG. 2, the inventor calculates the energy level transition diagram of the Si-O-Bi-Er structure bismuth-erbium co-doped silica fiber, and the inventor can see that the corresponding luminescence is obtained by a pumping light source of about 500nm through the energy level diagram, which well explains the luminescence of 1270nm and 1530 nm. The inventors have found that Er is often used as Er in a structure of quartz or the like 3+ Is present and the electronic structure is [ Kr]4d 10 4f 11 5s 2 5p 6 . Since erbium has a partially filled f-layer and the f-layer electrons are located deep in the atoms, well shielded by the outer enclosed 6s and 5p electron layers, each degenerate energy level due to spin-spin and spin-orbit coupling in the incompletely filled 4f shell is split into multiple energy levels by Stark. And the electronic structure of the bismuth atom is [ Xe]4f 14 5d 10 6s 2 6p 3 With excited states formed by outer layers of electronic structures 6s 2 6p 3 And (4) calculating. According to the test data of the inventor, both atoms can generate stable near-infrared luminescence.
It can be found from the energy level diagram that under 500nm pumping, erbium ions can be excited to 2 H 11/2 And 4 S 3/2 excited state and then relaxed by rapid non-radiative relaxation to 4 I 9/2 Excited state, finally rapid non-radiative relaxation step by step to 4 I 13/2 Excited state in 4 I 13/2 Transition to ground state under excited state 4 I 15/2 And the near infrared light with the near infrared wavelength of about-1530 nm is generated. And bismuth atoms can be pumped to 500nm to excite 1 S 0 And 1 D 2 excited states which can then be relaxed by rapid non-radiative relaxation to 3 P 1 Excited state in 3 P 1 Transition of excited state to 3 P 0 Emitting near infrared light with the wavelength of 1270 nm.
Therefore, the novel bismuth-erbium co-doped silica optical fiber preform has the advantages that the core layer is made of silica materials co-doped with erbium ions and bismuth atoms, and near-infrared luminescence is obtained and a luminescence band is widened through interaction between the core layer and the silica materials.
The embodiment also provides an application of the novel bismuth-erbium co-doped silica optical fiber preform, and the novel bismuth-erbium co-doped silica optical fiber preform is made into a device and applied to an optical fiber amplifier and an optical fiber laser.
Therefore, the device is made of the novel bismuth-erbium co-doped quartz optical fiber preform and is applied to an optical fiber amplifier and an optical fiber laser to obtain the optical fiber amplifier and the optical fiber laser with near-infrared luminescence.
FIG. 3 is a schematic diagram of a process for fabricating a novel bismuth-erbium co-doped silica optical fiber preform according to an embodiment of the present application. As shown in FIG. 3, by doping a small amount of erbium ions and bismuth atoms into a silica optical fiber and controlling their equilibrium positions, light emissions of 1270nm and 1530nm can be obtained. The preform is prepared based on chelate vapor phase doping technology and improved chemical vapor deposition equipment, and the process is as follows:
Step 200, polishing and drying of a deposition tube: using SF in high temperature aerobic environment 6 The inner wall of the quartz tube was polished to remove impurities such as organic substances on the inner wall of the tube, and the deposition tube was heated by a torch to be kept dry.
Step 300 cladding deposition: high-purity silicon chloride SiCl 4 And oxygen O 2 Introducing the mixed gas into a high-purity quartz glass tube, and carrying out high-temperature heating treatment by an oxyhydrogen flame torch to make the mixed gas in the quartz glass tube generate chemical reaction, so that silicon dioxide SiO can be generated on the inner surface of the quartz glass tube 2 Granules, repeating this step a plurality of times, silica SiO 2 After the particles are accumulated to a certain thickness, the temperature is raised to gradually vitrify the particles.
The chemical reaction of the mixed gas in the step is as follows: SiCl 4 +O 2 →SiO 2 +2Cl 2
Step 400 core region deposition: as shown in FIG. 2, oxygen O is used 2 001 as carrier gas, silicon chloride SiCl 4 A feedstock is fed into a deposition tube 005, Er (thd) 3 B as chelate of Er ionThe precursor has the advantages of lower boiling point, higher saturated vapor pressure and the like, is carried by the first helium He 002 to enter the deposition tube, and is carried by the second helium He 003 to oxidize the bismuth Bi 2 O 3 C also enters the deposition tube, and the same carbon CO 004 enters the deposition tube and is mixed with other raw materials. The flow of the oxyhydrogen flame burner 006 was adjusted to stabilize the temperature at 1800 ℃.
The chemical reaction of the mixed gas in the step is as follows: SiCl 4 +O 2 →SiO 2 +2Cl 2 、2C 33 H 57 O 6 Er+90O 2 →Er 2 O 3 +66CO 2 +63H 2 O、Bi 2 O 3 +3CO→2Bi+3CO 2 。
Step 500 high temperature collapse: stabilizing the oxyhydrogen flame temperature at 2100 ℃, maintaining the pressure in the fixed tube at positive pressure, gradually reducing the pressure in the collapse process, and finally contracting the fixed tube into a solid bismuth erbium-doped optical fiber preform in a negative pressure state.
Step 600, sleeving a preform: considering that the core-cladding ratio of the preform formed in step 400 is not satisfactory, a layer of high-purity quartz tube with a suitable thickness needs to be covered outside the preform formed in step 400, and a vacuum pump is used to ensure that sufficient negative pressure exists in the tube during the sleeving process, so that the bismuth-erbium co-doped preform with the preset core/cladding ratio is finally manufactured.
It is to be noted that, unless otherwise specified, technical or scientific terms used herein shall have the ordinary meaning as understood by those skilled in the art to which this application belongs.
In the description of the present application, it is to be understood that the terms "central," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," "circumferential," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the present application and to simplify the description, and are not intended to indicate or imply that the referenced devices or elements must have a particular orientation, be constructed and operated in a particular orientation, and are therefore not to be considered limiting of the present application.
Furthermore, the terms "first," "second," and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or to implicitly indicate a number of the indicated technical features. In the description of the present application, "a plurality" means two or more unless specifically defined otherwise.
In this application, unless expressly stated or limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can include, for example, fixed connections, removable connections, or integral parts; can be mechanically or electrically connected; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art as appropriate.
In this application, unless expressly stated or limited otherwise, the first feature "on" or "under" the second feature may be directly contacting the first and second features or indirectly contacting the first and second features through intervening media. Also, a first feature "on," "over," and "above" a second feature may be directly or diagonally above the second feature, or may simply indicate that the first feature is at a higher level than the second feature. A first feature "under," "beneath," and "under" a second feature may be directly under or obliquely under the second feature, or may simply mean that the first feature is at a lesser elevation than the second feature.
The above description is only for the preferred embodiment of the present application, but the scope of the present application is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present application should be covered within the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.
Claims (5)
1. A novel bismuth-erbium co-doped silica optical fiber preform is characterized by comprising:
an outer layer made of silicon dioxide; and
the core layer is made of silicon dioxide material co-doped with erbium ions and bismuth atoms, and near-infrared luminescence is obtained and a luminescence band is widened through interaction between the core layer and the silicon dioxide material.
2. The novel bismuth-erbium co-doped silica optical fiber preform of claim 1, wherein the near infrared emission wavelength is 1270nm and 1530 nm.
3. A novel bismuth-erbium co-doped silica fiber preform according to claim 1 or 2, wherein said core layer, said erbium ions and said bismuth atoms are doped in a high purity silica material.
4. Use of a novel bismuth-erbium co-doped silica optical fiber preform according to any of claims 1-3, wherein the novel bismuth-erbium co-doped silica optical fiber preform is made into a device for use in optical fiber amplifiers and fiber lasers.
5. A method for preparing a novel bismuth-erbium co-doped silica optical fiber preform according to any one of claims 1 to 3, characterized by operating according to the following steps:
step 100, corrosion and cleaning of the deposition tube: selecting a quartz tube as a deposition tube, corroding the deposition tube by using hydrofluoric acid until the deposition tube reaches a preset diameter, and cleaning the deposition tube by using deionized water;
step 200, polishing and drying of a deposition tube: use of sulfur hexafluoride SF in high temperature aerobic environments 6 Polishing the inner wall of the quartz tube to remove impurities such as organic matters on the inner wall of the quartz tube, and heating the deposition tube by using a blast lamp to keep the deposition tube dry;
step 300 cladding deposition: high purity fluorinated SiCl 4 And oxygen O 2 Introducing the mixed gas into a high-purity quartz glass tube, passing throughHigh-temperature heating treatment with oxyhydrogen torch to make the mixed gas in the quartz glass tube chemically react to generate SiO on the inner surface of the quartz tube 2 Granules, repeating this step a plurality of times, silica SiO 2 After the particle bodies are accumulated to a certain thickness, the temperature is raised to gradually vitrify the particle bodies,
the chemical reaction of the mixed gas in step 300 is: SiCl 4 +O 2 →SiO 2 +2Cl 2 ；
Step 400 core region deposition: with oxygen O 2 Silicon chloride SiCl as carrier gas 4 The raw materials are fed into a deposition tube, Er (thd) 3 As a chelate precursor of Er ions, carrying the Er ions into a deposition tube by helium He, and oxidizing bismuth Bi under the carrying of the helium He 2 O 3 And also enters the deposition tube, simultaneously, carbon monoxide CO enters the deposition tube to be mixed with other raw materials, the gas flow of the oxyhydrogen flame burner is adjusted to ensure that the temperature is stabilized at 1800 ℃,
the chemical reaction of the mixed gas in step 400 is: SiCl 4 +O 2 →SiO 2 +2Cl 2 、2C 33 H 57 O 6 Er+90O 2 →Er 2 O 3 +66CO 2 +63H 2 O、Bi 2 O 3 +3CO→2Bi+3CO 2 ；
Step 500 high temperature collapse: stabilizing the oxyhydrogen flame temperature at 2100 ℃, maintaining the pressure in the fixed tube at positive pressure, gradually reducing the pressure in the collapse process, and finally contracting the fixed tube into a solid bismuth erbium-doped optical fiber preform in a negative pressure state;
step 600, sleeving a preform: a layer of high-purity quartz tube with proper thickness is covered outside the prefabricated rod formed in the step 400, a vacuum pump is utilized to ensure that enough negative pressure exists in the tube in the sleeve process, and finally the novel bismuth-erbium co-doped quartz optical fiber prefabricated rod with a preset core/package ratio is manufactured.
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