CN114180823B - Anti-irradiation ultra-wideband L-band erbium-doped fiber and preparation method and application thereof - Google Patents
Anti-irradiation ultra-wideband L-band erbium-doped fiber and preparation method and application thereof Download PDFInfo
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Abstract
The invention discloses an anti-radiation ultra-wideband L-band erbium-doped fiber and a preparation method and application thereof, wherein the preparation method comprises the following steps: depositing a Soot layer on the inner wall of the quartz tube by adopting an MCVD (plasma chemical vapor deposition) process; soaking a quartz tube with a Soot layer in Er-containing material3+、Al3+And regulating the doping solution of the component R, soaking for 3-4 h, then leading out the solution, and drying in a drying atmosphere to obtain a doped quartz tube; heating the doped quartz tube to 1700-1900 ℃ in an oxygen atmosphere, and sintering to obtain a doped quartz rod; and drawing the doped quartz rod by using a tube-rod method to obtain the anti-radiation ultra-wideband L-band erbium-doped fiber. Based on MCVD optical fiber preparation technology, the invention leads the broadband spectrum of the erbium-doped phosphorus aluminosilicate optical fiber to be adjustable and controllable by introducing a plurality of co-doping ions to modify Er3+Is/are as follows4I13/2‑4I15/2Energy level transition is carried out, and the broadband emission range of the L wave band is expanded; at the same time, by co-doping Ce3+And P5+The anti-radiation performance of the optical fiber is improved, so that the preparation of the ultra-wideband anti-radiation optical fiber is realized.
Description
Technical Field
The invention relates to the technical field of optical fiber preparation, in particular to an anti-radiation ultra-wideband L-band erbium-doped optical fiber and a preparation method and application thereof.
Background
Currently, with the development of space exploration technology and the continuous research of 6G communication, large-capacity space optical communication is becoming a research hotspot. The main goal of spatial optical communication is to increase transmission capacity and transmission distance, and the implementation of this goal depends to a large extent on optical amplification techniques. In spatial communication, strong amplification is required to reduce the error rate, and especially, weak signals at a receiving end are required. The appearance of the optical fiber amplifier effectively amplifies small signals, and the rapid development of space communication is accelerated. In recent years, Wavelength Division Multiplexing (WDM) technology developed for large-capacity optical fiber communication is being more and more widely applied to spatial optical communication. This also requires that the erbium doped fiber in WDM not only have ultra-wideband gain but also have radiation stability. Therefore, there is a need to develop ultra-wideband radiation-resistant erbium-doped fiber amplifiers for space applications.
From the perspective of gain bandwidth extension, the key of expanding the L-band gain region is to weaken the influence of signal excited state absorption on L-band amplification, and component optimization of multi-component silicate glass is an effective means for further improving the amplification performance of optical fibers. The phosphosilicate EDF shows a wide gain range from 1560 nm to 1610 nm in an L band, and the Zr-doped EDF can realize broadband amplification from 1530nm to 1600nm above 11 dB. For the EDF of tellurate matrix, the average output signal power of 18.5 dBm is amplified flatly in the range of 1535-1610 nm. In addition, introducing co-doping ions into the fiber core is also an effective method for promoting broadband amplification; for example, EDFs containing Bi ions also exhibit signal gain in excess of 20dB and NF <6.7dB, extending over 58 nm from 1554 nm to 1612 nm; the introduction of Sb into silicate fibers also extends the L-band gain region to 1620 nm.
Under high energy radiation conditions, high energy radiation causes a dramatic increase in fiber background loss, commonly referred to as Radiation Induced Absorption (RIA). The fiber containing Al in the fiber core is sensitive to radiation, so that radiation-induced absorption is high, and the gain of the EDF is greatly reduced. Although the existing commercial EDFs can expand the bandwidth to some extent by adopting the above measures, the requirements of radiation resistance and broadband amplification cannot be met at the same time. Therefore, a new doping preparation method is needed to solve the defects in the prior art.
Disclosure of Invention
The invention aims to provide an anti-irradiation ultra-wideband L-band erbium-doped fiber and a preparation method and application thereof, which are used for solving the problem that the existing doped EDF is difficult to maintain the ultra-wideband gain performance under the high-dose gamma ray irradiation condition.
In order to solve the above technical problems, a first solution provided by the present invention is: a preparation method of an anti-radiation ultra-wideband L-band erbium-doped fiber comprises the following steps: (1) depositing a Soot layer on the inner wall of the quartz tube by adopting an MCVD (modified chemical vapor deposition) process; (2) soaking a quartz tube with a Soot layer in Er-containing material3+、Al3+And regulating the doping solution of the component R, soaking for 3-4 h, then leading out the solution, and drying in a drying atmosphere to obtain a doped quartz tube; (3) heating the doped quartz tube to 1700-1900 ℃ in an oxygen atmosphere, and sintering to obtain a doped quartz rod; (4) drawing a doped quartz rod by using a tube-rod method to obtain an anti-radiation ultra-wideband L-band erbium-doped fiber; SiO with porous Soot layer2And depositing a layer.
Preferably, the doping solution contains Er3+And Al3+Respectively is ErCl3And AlCl3。
Preferably, Er is doped in the solution3+The preparation concentration of (A) is 0.01-0.35 mol/L, Al3+The preparation concentration of (A) is 0.5-4.5 mol/L.
Preferably, the regulatory component R comprises CeCl3，GeCl3，La(NO3)3Any one or more of them.
Preferably, the doping solution contains Ce3+Or La3+And adjusting the pH value of the doping solution and maintaining the pH value to 1-2.
Preferably, the doping solution contains Ce3+When (Ce)3+The concentration of (A) is 0.05-1.5 mol/L; the doping solution contains La3+While, La3+The concentration of (b) is 0.1-5 mol/L.
Preferably, the regulatory component R comprises a P ion or a Ge ion.
Preferably, the drying atmosphere is formed by mixing nitrogen and chlorine, wherein the flow rate of the chlorine is 1-300 Sccm, and the flow rate of the nitrogen is 100-1000 Sccm.
In order to solve the above technical problem, a second solution provided by the present invention is: an anti-radiation ultra-wideband L-band erbium-doped fiber is prepared by the preparation method of the anti-radiation ultra-wideband L-band erbium-doped fiber in the first solution.
In order to solve the above technical problem, a third solution provided by the present invention is: the application of the anti-radiation ultra-wideband L-band erbium-doped fiber adopts the anti-radiation ultra-wideband L-band erbium-doped fiber in the second solution scheme, the anti-radiation ultra-wideband L-band erbium-doped fiber is used as an anti-radiation fiber under the condition that the radiation dose is 500-1000 Gy, and the ultra-wideband gain range is 1560-1625 nm.
The invention has the beneficial effects that: based on MCVD optical fiber preparation technology, the invention leads the broadband spectrum of the erbium-doped phosphoaluminosilicate optical fiber to be adjustable and controllable by introducing a plurality of co-doping ions to modify Er, and modifies the Er3+Is/are as follows4I13/2-4I15/2Energy level transition is carried out, and the broadband emission range of the L wave band is expanded; at the same time, by co-doping Ce3+And P5+The anti-radiation performance of the optical fiber is improved, so that the preparation of the ultra-wideband anti-radiation optical fiber is realized.
Drawings
FIG. 1 is a schematic diagram of a system for testing an irradiation-resistant ultra-wideband L-band erbium-doped fiber according to the present invention;
FIG. 2 is a graph showing the comparison of the gain effects of examples 1 to 3 of the present invention;
FIG. 3 is a graph comparing the gain of example 2 of the present invention under different irradiation environments;
FIG. 4 is a graph comparing the gain of example 3 of the present invention under different irradiation environments;
in the figure: 1-L-band signal generator, 2-input ISO, 3-input WDM, 4-EDF erbium-doped fiber sample, 5-output WDM, 6-output ISO, 7-first LD, 8-second LD, 9-OSA photoelectric detection analyzer.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be obtained by a person skilled in the art without any inventive step based on the embodiments of the present invention, are within the scope of the present invention.
For the first solution provided by the invention, the preparation method of the radiation-resistant ultra-wideband L-band erbium-doped fiber comprises the following steps:
(1) adopting MCVD process on the inner wall of the quartz tubeAnd depositing a Soot layer. In the step, based on the thermophoresis effect of MCVD process, SiCl is used4Depositing SiO on the inner wall of a quartz reaction tube as a raw material2And forming a loose and porous Soot layer, and providing attachment sites for liquid-phase doped ions by utilizing a nano porous structure.
(2) Soaking a quartz tube with a Soot layer in Er-containing material3+、Al3+And regulating and controlling the component R in the doped solution, soaking for 3-4 h, then leading out the solution, and drying in a drying atmosphere to obtain the doped quartz tube. In the step, doping ions are infiltrated and attached to the porous Soot layer in a liquid phase doping mode, and Er passes through the porous Soot layer3+、Al3+Co-doping and introducing a regulating component R to Er3 +The micro environment of the doping site is regulated and controlled to improve Er3+The optical induced fluorescence performance and the quenching caused by the space irradiation are inhibited, and the ultra-wideband emission and the irradiation resistance of the quartz-based erbium-doped fiber in the L waveband are further realized. In this embodiment, the doping solution contains Er3+And Al3+Respectively as ErCl3And AlCl3Wherein Er3+The preparation concentration of (A) is preferably 0.01-0.35 mol/L, Al3 +The preparation concentration of (b) is preferably 0.5-4.5 mol/L.
In this embodiment, the regulatory component R mainly comprises:
a）Ce3+、La3+the corresponding raw materials are respectively CeCl3，La(NO3)3(ii) a Specifically, Ce is contained in the doping solution3+When (Ce)3+The concentration of (b) is preferably 0.05-1.5 mol/L; the doping solution contains La3+While, La3+The concentration of (b) is preferably 0.1 to 5 mol/L.
b) P ions, Ge ions and other components which are volatile at high temperature, and the volatile components and the easily hydrolyzed transition metal ions have a synergistic regulation effect on Er3+The micro environment of the doping sites is adjusted jointly, but the doping mode of P ions is different from the doping mode of the easily hydrolyzed transition metal ions, and the doping mode needs to be carried out in a gas phase doping mode, and the Soot layer has a porous structure and is not only liquid phase doping but also gas phase dopingThe adhesive composition can exhibit excellent adhesion.
In the step of drying, preferably, the drying atmosphere is formed by mixing nitrogen and chlorine, wherein the flow rate of the chlorine is 1-300 Sccm, the flow rate of the nitrogen is 100-1000 Sccm, and residual moisture and hydroxyl are removed through drying, so that subsequent high-temperature sintering is facilitated.
(3) And heating the doped quartz tube to 1700-1900 ℃ in an oxygen atmosphere, and sintering to obtain the doped quartz rod. In the step, the doped quartz tube is sintered at high temperature in an oxygen environment, so that the doped ions react with oxygen, and meanwhile, the gap collapse vitrification enables the doped ions to enter a glass structure, thereby obtaining the stable doped quartz rod.
(4) And drawing the doped quartz rod by using a tube-rod method to obtain the anti-radiation ultra-wideband L-band erbium-doped fiber. In the step, the obtained doped quartz rod is drawn into a single-clad optical fiber by adopting a conventional tube-rod method, so that the anti-radiation ultra-wideband L-band erbium-doped optical fiber is obtained.
For the second solution provided by the invention, the anti-radiation ultra-wideband L-band erbium-doped fiber is prepared by the preparation method of the anti-radiation ultra-wideband L-band erbium-doped fiber in the first solution, namely the structure and performance of the anti-radiation ultra-wideband L-band erbium-doped fiber in the first solution and the anti-radiation ultra-wideband L-band erbium-doped fiber in the second solution are consistent.
For the third solution provided by the invention, the anti-radiation ultra-wideband L-band erbium-doped fiber in the second solution is adopted to be used as an anti-radiation fiber under the condition that the radiation dose is 500-1000 Gy, the ultra-wideband gain range is 1560-1625 nm, and the erbium-doped fiber prepared under the high gamma ray radiation can still keep the ultra-wideband gain performance.
In particular, the mechanism and the advantages of the irradiation-resistant ultra-wideband L-band erbium-doped fiber are elaborated. In glass, Er3+The local coordination environment determines the characteristics of an emission spectrum, and particularly influences Er3+Factors of the ion emission spectrum include: the species of the surrounding coordinated ions, the symmetry of the specific sites, the symmetry of the overall material, and the coupling mode of the emission wavelength with the phonons in the material. In general, Er3+The electronegativity of surrounding anions can influence the intensity and position of an emission peak, and the strong electronegativity can improve Er3+The degeneracy of electronic states enables the emission spectrum to be wider; as the electronegativity of the surrounding anions decreases, the absolute position and bandwidth of the emission spectrum shifts to lower energies, e.g., Er3+In fluoride glasses4I13/2→4I15/2The emission peak is more likely to show a red shift phenomenon.
In the present invention, Er is used3+、Al3+Codoped quartz glass is used as a basic doping system, a regulating component R containing P, La, Ce, Ge and other elements is introduced, and Er is regulated by regulating the component R3+In coordination environment and improved Er3+Dispersibility in quartz glass and reduced Er3+Cluster effect of (2). When Er3+When the local coordination field environment of the doping site is changed, Er3+Will also change. Point defects are caused when the optical fiber is subjected to high-energy radiation, the point defects mainly comprise negative electron center and hole center pairs, and the optical fiber shows high radiation induced absorption due to the existence of the point defects; the invention regulates and controls P in the component R5+When volatile ions are radiated by gamma rays, different color centers can be generated, and Ce is introduced3+When the easily hydrolyzed transition metal ions are equal, Ce with one electron is arranged above the 4f layer3+Trapped Ce, tending to lose electrons to obtain a stable empty state3+Hole Centers (HC) are excited, and Ce4+The Electron Center (EC) can be captured as follows:
Ce3++HC→Ce4+
Ce4++EC→Ce3+
this process determines the combination of Ce ions and color centers and therefore also by introducing Ce3+Can improve Er3+The coordination environment is improved, and Er doping is further improved3+The radiation resistance of the optical fiber is improved, and Er doping is improved3+Environmental suitability of optical fibers under high-energy radiation conditions. Due to the special energy level structure, Ce3+The transition metal ions which are easy to hydrolyze can be used for increasing Er3+Emission efficiency of (2) andnow the broadband amplification of the L wave band is matched with the P5+When volatile ions are generated, Er can be generated3+The energy level is micro-controlled, namely Er can be regulated and controlled by regulating the species and the concentration of the introduced doping ions3+Emission properties in the near infrared band, especially the L band.
The irradiation-resistant ultra-wideband L-band erbium-doped fiber is tested and analyzed by the specific embodiment.
Example 1
The doping ions of the anti-irradiation ultra-wideband L-band erbium-doped fiber in the embodiment comprise Er3+、Al3+And La3+The ion is prepared by the following specific steps:
(1) based on the thermophoresis effect of the MCVD process, a porous Soot layer with the thickness of 500 mm is deposited on the inner wall of the quartz tube.
(2) Soaking a quartz tube with a Soot layer into a material containing Er3+、La3+And Al3+Doping solution of Er3+Has a concentration of 0.15mol/L, Al3+Has a concentration of 1.5mol/L, La3+The concentration of (2) is 0.3 mol/L.
(3) The solution was removed after 4 hours of immersion.
(4) And (3) placing the soaked quartz tube on a rotary tube type ventilation device, and drying in a drying atmosphere, wherein the drying atmosphere is formed by mixing nitrogen and chlorine, the flow of the chlorine is 1-300 Sccm, and the flow of the nitrogen is 100-1000 Sccm.
(5) After the drying is finished, the dried quartz tube is heated to 1500 ℃ and sintered into a transparent and compact doped quartz rod.
(6) And drawing the sintered doped quartz rod into the optical fiber by adopting a tube-rod method.
Example 2
The doping ions of the anti-irradiation ultra-wideband L-band erbium-doped fiber in the embodiment comprise Er3+、Al3+、La3+、Ge4+The ion is prepared by the following specific steps:
(1) based on the thermophoresis effect of the MCVD process, a porous Soot layer with the thickness of 500 mm is deposited on the inner wall of the quartz tube.
(2) Will have a Soot layerSoaking quartz tube with Er3+、La3+And Al3+Doping solution of Er3+Has a concentration of 0.15mol/L, Al3+Has a concentration of 1.5mol/L, La3+The concentration of (2) is 0.3 mol/L.
(3) The solution was removed after 4 hours of immersion.
(4) And (3) placing the soaked quartz tube on a rotary tube type ventilation device, and drying in a drying atmosphere, wherein the drying atmosphere is formed by mixing nitrogen and chlorine, the flow of the chlorine is 1-300 Sccm, and the flow of the nitrogen is 100-1000 Sccm.
(5) After drying, heating the quartz tube to 1100-1300 ℃ in an oxygen atmosphere, and introducing 100Sccm of GeCl4And Ge doping is carried out on the Soot layer.
(6) Heating the quartz tube to 1700-1900 ℃ in an oxygen atmosphere, and sintering to obtain the transparent dense doped quartz rod.
(7) And drawing the sintered doped quartz rod into the optical fiber by adopting a tube-rod method.
Example 3
The doping ions of the anti-irradiation ultra-wideband L-band erbium-doped fiber in the embodiment comprise Er3+、Al3+、La3+、Ce3+、Ge4+、P5+The ion is prepared by the following specific steps:
(1) based on the thermophoresis effect of the MCVD process, a porous Soot layer with the thickness of 500 mm is deposited on the inner wall of the quartz tube.
(2) Soaking a quartz tube with a Soot layer into a material containing Er3+、La3+、Al3+And Ce3+Doping solution of Er3+Has a concentration of 0.15mol/L, Al3+Has a concentration of 1.5mol/L and La3+Has a concentration of 0.3mol/L, Ce3+The concentration of (2) was 0.2 mol/L.
(3) The solution was removed after 3 hours of immersion.
(4) And (3) placing the soaked quartz tube on a rotary tube type ventilation device, and drying in a drying atmosphere, wherein the drying atmosphere is formed by mixing nitrogen and chlorine, the flow of the chlorine is 1-300 Sccm, and the flow of the nitrogen is 100-1000 Sccm.
(5) After drying, the quartz tube is heated to 1000 ℃ and sintered into a transparent and compact quartz glass rod, and 150Sccm of POCl is introduced into the quartz tube3Gas phase doping is carried out.
(6) Heating the quartz tube to 1100 deg.C, sintering to obtain transparent and dense quartz glass rod, and introducing 100Sccm GeCl4Gas is doped in gas phase and sintered into transparent and compact doped quartz rods.
(7) And drawing the sintered doped quartz rod into the optical fiber by adopting a tube-rod method.
Referring to fig. 1, fig. 1 is a schematic diagram of a testing system of an irradiation-resistant ultra-wideband L-band erbium-doped fiber according to the present invention, a sample prepared in examples 1 to 3 is tested with a small signal of-20 dBm, and a gain spectrum obtained is shown in fig. 2 and table 1, the sample prepared in example 1 obtains L-band high-gain flat emission within 1561 to 1611nm, the sample prepared in example 2 obtains L-band high-gain flat emission within 1564 to 1620nm, and the sample prepared in example 3 obtains L-band high-gain flat emission within 1560 to 1625 nm. By comparing the above 3 examples, it can be seen that different doping conditions all affect Er3+The emission performance in the near infrared has an important influence on the gain improvement of the L wave band, the gain of the L wave band can be improved by optimally selecting co-doped ions with different concentrations, and the gain range of the L wave band is widened, wherein the test effect of the samples of the embodiment 2 and the embodiment 3 is better.
Further, the irradiation tests of example 2 and example 3 were carried out by placing the two sets of optical fibers in the environment of gamma ray doses of 0Gy, 500Gy and 1000Gy, respectively, and the test results are shown in FIGS. 3 and 4, respectively. Example 2 the gain drops from the original 21dB to 15dB under 500Gy, and the gain drops to 2dB at 1000Gy dose. In example 3, the gain was reduced from 27dB to 26dB at 500Gy, and the gain continued to be reduced to 15.6dB at 1000 Gy. Compared with embodiment 2, the radiation resistance performance of embodiment 3 is more stable, and the expansion bandwidth is wider, so that in the above three embodiments, embodiment 3 can maintain better ultra-wideband gain performance under the high-dose gamma ray irradiation condition. The method is based on MCVD optical fiber preparation technology and introduces Er3+，Al3 +，La3+，Ge4+, P5+，Ce3+Co-doping ions, which can increase Er3+Diversity of coordination environment, further on Er3+The energy level of the erbium-doped phosphoaluminosilicate fiber is modified, so that the L-band gain can be improved, the L-band broadband can be expanded, and the broadband spectrum of the erbium-doped phosphoaluminosilicate fiber can be accurately regulated and controlled by adjusting the species and the concentration of doped ions; at the same time, by co-doping Ce3+And P5+The anti-radiation performance of the optical fiber is improved, and the ultra-wideband anti-radiation optical fiber with the wavelength of over 1625nm is prepared.
TABLE 1 tables for testing the gain effects of examples 1 to 3
Based on MCVD optical fiber preparation technology, the invention leads the broadband spectrum of the erbium-doped phosphoaluminosilicate optical fiber to be adjustable and controllable by introducing a plurality of co-doping ions to modify Er, and modifies the Er3+Is/are as follows4I13/2-4I15/2Energy level transition is carried out, and the broadband emission range of the L wave band is expanded; at the same time, by co-doping Ce3+And P5+The anti-radiation performance of the optical fiber is improved, so that the preparation of the ultra-wideband anti-radiation optical fiber is realized.
It should be noted that the above embodiments belong to the same inventive concept, and the description of each embodiment has a different emphasis, and reference may be made to the description in other embodiments where the description in individual embodiments is not detailed.
The above embodiments only express the embodiments of the present invention, and the description thereof is specific and detailed, but not to be understood as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (7)
1. A preparation method of an anti-radiation ultra-wideband L-band erbium-doped fiber is characterized by comprising the following steps:
(1) depositing a Soot layer on the inner wall of the quartz tube by adopting an MCVD (plasma chemical vapor deposition) process;
(2) soaking the quartz tube with the Soot layer in Er-containing material3+、Al3+And regulating the doping solution of the component R, soaking for 3-4 h, then leading out the solution, and drying in a drying atmosphere to obtain a doped quartz tube;
(3) heating the doped quartz tube to 1700-1900 ℃ in an oxygen atmosphere, and sintering to obtain a doped quartz rod;
(4) adopting a tube rod to manufacture the doped quartz rod to obtain an anti-irradiation ultra-wideband L-band erbium-doped fiber;
the Soot layer is SiO with a porous structure2Depositing a layer;
in the doping solution, Er3+The preparation concentration of (A) is 0.01-0.35 mol/L, Al3+The preparation concentration of (A) is 0.5-4.5 mol/L;
the regulatory component R comprises CeCl3，La(NO3)3Any one or more of; the doping solution contains Ce3+When (Ce)3+The concentration of (A) is 0.05-1.5 mol/L; the doping solution contains La3+While, La3+The concentration of (b) is 0.1-5 mol/L.
2. The method for preparing the irradiation-resistant ultra-wideband L-band erbium-doped fiber according to claim 1, characterized in that the regulating component R further comprises P ions or Ge ions and POCl is adopted3Gas or GeCl4Gas phase doping is carried out on the gas;
the step of gas phase doping is performed after the step (2) of obtaining the doped quartz tube and before the step (3) of sintering.
3. The method for preparing an irradiation-resistant ultra-wideband L-band erbium-doped fiber as claimed in claim 1, wherein the doping solution contains Er3+And Al3+Respectively as ErCl3And AlCl3。
4. The method for preparing the irradiation-resistant ultra-wideband L-band erbium-doped fiber according to claim 3, characterized in that the doping solution contains Ce3+Or La3+And adjusting the pH value of the doping solution and maintaining the pH value to 1-2.
5. The method for preparing the irradiation-resistant ultra-wideband L-band erbium-doped fiber according to claim 1, wherein the dry atmosphere is composed of a mixture of nitrogen and chlorine, wherein the flow rate of the chlorine is 1-300 Sccm, and the flow rate of the nitrogen is 100-1000 Sccm.
6. An anti-radiation ultra-wideband L-band erbium-doped fiber is characterized by being prepared by the preparation method of the anti-radiation ultra-wideband L-band erbium-doped fiber according to any one of claims 1 to 5.
7. The application of the anti-radiation ultra-wideband L-band erbium-doped fiber as claimed in claim 6, wherein the anti-radiation ultra-wideband L-band erbium-doped fiber is applied as an anti-radiation fiber under the condition of radiation dose of 500-1000 Gy, and the ultra-wideband gain range is 1560-1625 nm.
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