CN115102532B - Short-circuit overcurrent protection circuit and method for high-side output of MOS (Metal oxide semiconductor) tube and vehicle - Google Patents
Short-circuit overcurrent protection circuit and method for high-side output of MOS (Metal oxide semiconductor) tube and vehicle Download PDFInfo
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- CN115102532B CN115102532B CN202211013168.7A CN202211013168A CN115102532B CN 115102532 B CN115102532 B CN 115102532B CN 202211013168 A CN202211013168 A CN 202211013168A CN 115102532 B CN115102532 B CN 115102532B
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/04—Modifications for accelerating switching
- H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
- H03K17/0412—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/02—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess current
- H02H9/025—Current limitation using field effect transistors
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
Abstract
The application discloses short-circuit overcurrent protection circuit and protection method for high-side output of MOS (metal oxide semiconductor) tubes and a vehicle, wherein the protection circuit comprises an eighth resistor, a detection circuit, a control circuit, a delay circuit and a control end, the eighth resistor is connected with a first input end of the detection circuit, an input end of the control end is connected with a power pin of the detection circuit through the delay circuit, an output end of the control end is connected with a subsequent drive circuit of the MOS tubes, an output end of the detection circuit is connected with the control circuit, and the control circuit is suitable for changing output end voltage of the control end according to output voltage of the detection circuit. The MOS tube can be protected from being damaged by short circuit in real time; and the time delay of the time delay circuit is adjusted, which is equivalent to changing the magnitude of the output current of the MOS tube, thereby playing the role of starting and limiting the current.
Description
Technical Field
The application relates to the technical field of electronic circuits, in particular to a short-circuit overcurrent protection circuit and a short-circuit overcurrent protection method for high-side output of an MOS (metal oxide semiconductor) tube and a vehicle.
Background
Various light control on the car, the control of various electrical apparatus, and the protection of each way of current output in the power control box, etc., the scheme adopted at present is generally the scheme of intelligent MOS tube, but the intelligent MOS tube has the disadvantages of poor selectivity, high price, limited output power, etc.; before the intelligent MOS tube is adopted, the traditional control mode is that a relay is added with a fuse, and the mode has the defects of short service life of switch action, untimely protection and the like.
Adopt MOS pipe control to add the scheme of output protection, enable the existing advantage of intelligent MOS of whole circuit, have the output heavy current simultaneously, advantage such as with low costs, ordinary MOS pipe also can be applied to like the various light control of car, the control of various electrical apparatus, the protection of each way current output in the power control box etc. in addition, therefore the short-circuit protection of MOS pipe is the important guarantee of automobile parts normal operating, is that ordinary MOS pipe replaces the most crucial step of intelligent MOS pipe.
The MOS tube is used as the output mode of the switch and is divided into low-side output and high-side output, the low-side output is that a power supply is firstly connected with a load, the load is grounded through the MOS tube, the high-side output is that the power supply is firstly connected with the load through the MOS tube, and the load is grounded. For a circuit in which various loads are placed with a fixed power supply voltage, for example, in an environment in which the voltage of an automobile battery is fixed and the body GND is grounded, short-circuiting of the output is likely to occur, and detection of an abnormal state is suitably performed using a high-side switch, i.e., MOS transistor high-side output, which is easy to detect grounding. The NMOS tube is generally used as a low-side driving device, and the G-voltage is higher than the ground voltage and is higher than the breakover threshold voltage in a low-side output mode. The high-side output generally uses PMOS tubes, the high-side output driving of the PMOS tubes is also simpler, but the PMOS tubes are relatively complex to manufacture, high in cost and not beneficial to manufacturing high-power tubes, the PMOS tubes outputting more than 50A are few, the high-power MOS tubes are NMOS tubes, the maximum output current of the NMOS tubes can reach more than 300A, a plurality of manufacturers are provided, and the selectivity is high. Therefore, PMOS tubes are generally adopted for high-side output with low power, and NMOS tubes are generally adopted for high-side output with high power.
Therefore, it is necessary to design a short-circuit overcurrent protection circuit for the high-side outputs of the PMOS transistor and the NMOS transistor.
Disclosure of Invention
An object of this application lies in providing a short circuit overcurrent protection circuit of MOS pipe high limit output, and it can detect whether the load short circuit carries out MOS pipe start-up current-limiting, has simple structure, and intelligent MOS pipe is with low costs relatively, advantages such as output is big.
The second objective of the present application is to provide a short-circuit and overcurrent protection method for high-side output of MOS transistor, which can switch off the MOS transistor switch by changing the control signal according to the short-circuit or overcurrent of the load, and has the advantages of simple structure, low cost, large output power, etc.
The third objective of the present application is to provide a vehicle using the short-circuit over-current protection circuit or the protection method for high-side output of the MOS transistor.
In order to achieve one of the purposes, the technical scheme adopted by the application is as follows: the short-circuit overcurrent protection circuit with the high-side output of the MOS tube comprises an eighth resistor, a detection circuit, a control circuit, a delay circuit and a control end, wherein the eighth resistor is connected with a first input end of the detection circuit in parallel, an input end of the control end is connected with a power pin of the detection circuit through the delay circuit, an output end of the control end is connected with a subsequent drive circuit of the MOS tube, an output end of the detection circuit is connected with the control circuit, and the control circuit is connected with an output end of the control end.
Preferably, the input end of the control end is adapted to receive a control signal for controlling the switching of the MOS transistor, the control end includes a first resistor, the control signal is connected to the subsequent driving circuit of the MOS transistor through the first resistor, and the control circuit is a pull-down circuit and adapted to pull down the output voltage of the first resistor.
Furthermore, the control circuit comprises a first triode and a fifth resistor, the first resistor is connected with a collector or an emitter of the first triode, a base of the first triode is connected with an output end of the detection circuit and is grounded through the fifth resistor, and the other pole of the first triode is grounded.
Preferably, the detection circuit is a gate circuit, when the load is short-circuited, the first input terminal inputs a low voltage, and the detection circuit is adapted to output a high level or a low level.
Further, the gate circuit is an nand gate, the nand gate includes a first input end and a second input end, the first input end is connected to the eighth resistor, and the second input end is connected to the input end of the control end.
Preferably, the delay circuit is an RC delay circuit, the delay circuit includes a first capacitor and a sixth resistor, the control end is connected to the first end of the sixth resistor, the second end of the sixth resistor is connected to the first capacitor and the power pin of the detection circuit, and the first capacitor is grounded.
Preferably, the eighth resistor is connected in series with a seventh resistor, one end of the seventh resistor is connected to the output end of the MOS transistor, the other end of the seventh resistor is connected to the eighth resistor, and the eighth resistor is grounded.
In order to achieve the second purpose, the technical scheme adopted by the application is as follows: the short-circuit overcurrent protection method for high-side output of the MOS transistor comprises the following steps:
the detection circuit is started in a delayed mode to wait for the output voltage of the MOS tube to rise;
inputting the voltage of the high potential end of the eighth resistor into the detection circuit;
the detection circuit outputs high level or low level to the control circuit;
the control circuit pulls down the voltage of the output end of the control end to enable the MOS tube to be closed.
Preferably, the detection circuit is a nand gate, the control circuit includes a first triode, and the short-circuit and overcurrent protection method further includes the steps of:
inputting a control signal into the NAND gate;
when the load is short-circuited, the NAND gate outputs high level, and the first triode is conducted.
The voltage of the output end of the control end is pulled down by the first triode, and the MOS tube is closed.
In order to achieve the third purpose, the technical scheme adopted by the application is as follows: a vehicle uses the short-circuit overcurrent protection circuit or method of the MOS tube high-side output.
Compared with the prior art, the beneficial effect of this application lies in:
(1) The short-circuit overcurrent protection circuit for the high-side output of the MOS tube is a hardware protection circuit, and when the load at the output end of the MOS tube is short-circuited, the circuit can protect the MOS tube from being damaged in real time;
(2) The larger the load is, the longer the stable time of MOS pipe output level, and this application can adjust the delay time of delay circuit, is equivalent to the size that changes the MOS pipe output current of allowwing, plays the effect of starting the current-limiting.
(3) The protection circuit provided by the application is universal for the NMOS tube and the PMOS tube, the PMOS tube is simple in driving mode, the output power of the NMOS tube is high, and the protection circuit can be matched with different NMOS tubes or PMOS tubes to form MOS tube high-side output circuits with different characteristics; and adopt ordinary MOS pipe control to add the scheme of protection circuit, enable whole circuit to have the advantage of intelligent MOS promptly, have output heavy current simultaneously, advantage such as with low costs.
Drawings
FIG. 1 is a circuit diagram of a PMOS transistor high-side output and short-circuit over-current protection circuit.
FIG. 2 is a circuit diagram of a high side output and short circuit over-current protection circuit for an NMOS transistor.
In the figure: 1. a PMOS high-side output circuit; 2. a PMOS drive circuit; 01. an NMOS high side output circuit; 02. an NMOS drive circuit; 3. a short circuit overcurrent protection circuit; 4. a control end;
r1 and a first resistor; r2 and a second resistor; r3 and a third resistor; r4 and a fourth resistor; r5 and a fifth resistor; r6 and a sixth resistor; r7 and a seventh resistor; r8 and an eighth resistor; r9 and a ninth resistor; r10 and a tenth resistor; CON, a control signal; VC, supply voltage; OUT, output voltage of MOS tube; q1, a first triode; q2 and a second triode; q3, a third field effect transistor; t1, an MOS tube; d1, a diode; u1 and a NAND gate; DRVC and the drive voltage of an NMOS tube.
Detailed Description
The present application is further described below with reference to specific embodiments, and it should be noted that, without conflict, any combination between the embodiments or technical features described below may form a new embodiment.
In the description of the present application, it should be noted that, for the terms of orientation, such as "central", "lateral", "longitudinal", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", etc., it indicates that the orientation and positional relationship shown in the drawings are based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present application and simplifying the description, but does not indicate or imply that the device or element referred to must have a specific orientation, be constructed in a specific orientation, and be construed as limiting the specific scope of protection of the present application.
It is noted that the terms first, second and the like in the description and in the claims of the present application are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order.
The terms "comprises," "comprising," and "having," and any variations thereof, in the description and claims of this application, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed, but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
As shown in fig. 1 to fig. 2, the present application provides circuit diagrams of a short-circuit overcurrent protection circuit with high-side output of a MOS transistor when the short-circuit overcurrent protection circuit is matched with a PMOS and an NMOS, respectively.
In the first embodiment, as shown in fig. 1, the PMOS transistor high-side output and short-circuit overcurrent protection circuit includes a PMOS high-side output circuit 1, a PMOS driving circuit 2, and a short-circuit overcurrent protection circuit 3. The PMOS driving circuit 2 and the short-circuit overcurrent protection circuit 3 can share one control end 4 to control the output and the closing of the PMOS tube T1, the input end of the control end 4 can be connected with the MCU, the MCU sends a control signal CON, the MOS tube T1 is conducted and can be output when the control signal CON is at a high level, and the MOS tube T1 is closed when the control signal CON is at a low level.
The PMOS high-side output circuit 1 includes a power supply, an MOS transistor T1 and a load, the load is not shown in the figure, wherein the diode D1 is a relay diode, the S pole of the MOS transistor T1 is connected to the power supply, the D pole is connected to the load, the power supply voltage VC is set according to a corresponding vehicle control module, and may be a 12V system, a 24V system, or a 48V system, and the output voltage of the MOS transistor T1 is denoted as OUT.
PMOS transistor T1's the G utmost point connects PMOS drive circuit 2, it is specific, PMOS drive circuit 2 includes control end 4, second resistance R2, third resistance R3, fourth resistance R4, second triode Q2, wherein, the output of control end 4 is connected with second resistance R2 and second triode Q2's base, second resistance R2 ground connection, second triode Q2's projecting pole ground connection, third resistance R3 is connected to the collecting electrode, MOS pipe T1's the G utmost point is connected to third resistance R3, and establish ties fourth resistance R4, fourth resistance R4 is connected with mains voltage VC.
The short-circuit overcurrent protection circuit 3 comprises an eighth resistor R8 connected with the load in parallel, a detection circuit, a control circuit, a delay circuit and a control end 4, wherein the eighth resistor R8 is connected with a first input end B of the detection circuit, an input end of the control end 4 is connected with a power pin VCC of the detection circuit through the delay circuit, an output end of the control end 4 is connected with a subsequent drive circuit of a PMOS (P-channel metal oxide semiconductor) tube T1, an output end Y of the detection circuit is connected with the control circuit, and the control circuit is connected with an output end of the control end 4.
The working principle of the short-circuit overcurrent protection circuit 3 is as follows: when MCU sends control signal CON and opens MOS pipe T1, control signal CON passes through delay circuit conduction to detection circuitry's power pin VCC, detection circuitry time delay is opened in order to wait for MOS pipe T1 output voltage to rise, when the load short circuit, the voltage step-down that eighth resistance R8 divides into, the input of detection circuitry's first input B department is switched to the low-voltage by the high-voltage, make the output of detection circuitry output Y change, thereby control circuit begins work, change the output terminal voltage of control end 4 then and make the follow-up drive circuit of MOS pipe T1 can not drive MOS pipe T1.
Compared with the prior art, the short-circuit overcurrent protection circuit 3 is a hardware protection circuit, and can protect the MOS tube T1 from being damaged in real time when the load at the output end of the MOS tube T1 is short-circuited; because the load is bigger, the output level of the MOS transistor T1 is stable for a longer time, if the output level of the MOS transistor T1 is not stable, the detection circuit is started, the drive control circuit changes the voltage of the output end of the control end 4, namely, the magnitude of the output current of the MOS transistor T1 is allowed to be changed by setting the delay time, so that the effect of starting and limiting the current is achieved; the PMOS tube T1 has simple driving mode, and the whole PMOS high-side output and short-circuit overcurrent protection circuit has simple structure, and greatly reduces the use cost compared with an intelligent MOS.
The input end of the control end 4 is suitable for receiving a control signal CON for controlling the on/off of the MOS transistor T1, the control end 4 includes a first resistor R1, the control signal CON is connected with a subsequent driving circuit of the MOS transistor T1 through the first resistor R1, and the control circuit is a pull-down circuit and is suitable for pulling down the voltage at the output end of the first resistor R1.
Preferably, the detection circuit is a gate circuit, when the load is short-circuited, the first input terminal B inputs a low voltage, and the detection circuit is adapted to output a high level or a low level. The gate circuit has simple structure and low use cost.
When the control signal CON is at a high level, the first resistor R1 can provide a higher voltage to the subsequent PMOS driving circuit 2, so that the PMOS transistor T1 is turned on, when the load normally works, the detection circuit does not drive the pull-down circuit, the voltage at the two ends of the first resistor R1 is substantially unchanged, when the load is short-circuited, the eighth resistor R8 inputs a low voltage to the detection circuit, at this time, the detection circuit drives the pull-down circuit to operate, the pull-down circuit pulls down the voltage on the right side of the first resistor R1, so that the PMOS driving circuit 2 cannot turn on the PMOS transistor T1, that is, the PMOS transistor T1 is turned off through the voltage at the output end of the pull-down control end 4.
Further, the gate circuit is a nand gate U1, the nand gate U1 includes a first input terminal B and a second input terminal a, the first input terminal B is connected to the eighth resistor R8, the second input terminal a is connected to the input terminal of the control terminal 4, that is, the second input terminal a receives the control signal CON as one of the inputs.
The control circuit comprises a first triode Q1 and a fifth resistor R5, the first resistor R1 is connected with a collector or an emitter of the first triode Q1, a base of the first triode Q1 is connected with an output end Y of the detection circuit and is grounded through the fifth resistor R5, and the other pole of the first triode Q1 is grounded. When the output end Y of the NAND gate U1 outputs a high level, the first triode Q1 is conducted, and the voltage on the right side of the first resistor R1 becomes low.
Further, the first triode Q1 is an NPN type triode, a collector thereof is connected to the first resistor R1, and an emitter thereof is grounded.
The delay circuit is an RC delay circuit, the delay circuit comprises a first capacitor C1 and a sixth resistor R6, the control end 4 is connected with the first end of the sixth resistor R6, the second end of the sixth resistor R6 is connected with the first capacitor C1 and a power supply pin of the detection circuit, and the first capacitor is grounded. The RC delay circuit is convenient for calculating delay time and adjusting the delay time.
The eighth resistor R8 is connected with the seventh resistor R7 in series, one end of the seventh resistor R7 is connected with the output end of the MOS tube T1, the other end of the seventh resistor R7 is connected with the eighth resistor R8, and the eighth resistor R8 is grounded.
Because the power supply voltages VC of different automobile control modules may be 12V, 24V, 48V and the like, the eighth resistor R8 and the seventh resistor R7 are connected in series for voltage division, so that the condition that the input voltage B of the first input end of the detection circuit is too high can be avoided, and the detection circuit is protected.
In the second embodiment, the present application can further provide an NMOS high-side output and short-circuit overcurrent protection circuit, as shown in fig. 2, including an NMOS high-side output circuit 01, an NMOS driving circuit 02, and a short-circuit overcurrent protection circuit 3. The NMOS drive circuit 02 and the short-circuit overcurrent protection circuit 3 can share one control end 4 to control the output and the closing of the NMOS tube T1, the input end of the control end 4 is connected with the MCU, the MCU sends a control signal CON, the MOS tube T1 is conducted to be output when the control signal CON is at a high level, and the MOS tube T1 is closed when the control signal CON is at a low level.
The NMOS high-side output circuit 01 comprises a power supply, an NMOS tube T1 and a load, the S pole of the NMOS tube is connected with the load, the D pole of the NMOS tube is connected with the power supply, the G pole of the NMOS tube is connected with the NMOS drive circuit 02, the NMOS high-side output circuit 01 and the NMOS drive circuit 02 are different from the embodiment, and the short-circuit overcurrent protection circuit 3 has the same structure as the embodiment.
Specifically, the NMOS driving circuit 02 includes a control terminal 4, a second resistor R2, a third resistor R3, a fourth resistor R4, a ninth resistor R9, a tenth resistor R10, a second field-effect transistor Q2, and a third field-effect transistor Q3. The output end of the control end 4 is connected with the second resistor R2 and the G pole of the second field-effect tube Q2, the second resistor R2 is grounded, the S pole of the second field-effect tube Q2 is grounded, the D pole is connected with the third resistor R3, the third resistor R3 is connected with the fourth resistor R4 in series, the third resistor R3 is connected with the G pole of the third field-effect tube Q3, the S pole of the third field-effect tube Q3 and the fourth resistor R4 are connected with the driving voltage of the NMOS tube T1, the D pole of the third field-effect tube Q3 is grounded through the ninth resistor R9 and the tenth resistor R10 which are connected in series, and the ninth resistor R9 is connected with the G pole of the NMOS tube T1.
The short-circuit overcurrent protection circuit 3 is universal for NMOS and PMOS and can be matched with different NMOS or PMOS to form MOS high-side output circuits with different characteristics; and adopt ordinary MOS pipe T1 control to add short circuit overcurrent protection circuit 3's scheme, enable whole circuit to have the advantage of intelligent MOS promptly, have output heavy current simultaneously, advantage such as with low costs.
The application can also provide a short circuit overcurrent protection method of MOS high-side output, which comprises the following steps:
the detection circuit is started in a delayed mode to wait for the output voltage of the MOS transistor T1 to rise;
inputting the voltage at the high potential end of the eighth resistor R8 into the detection circuit;
the detection circuit outputs high level or low level to the control circuit;
the control circuit pulls down the voltage at the output end of the control end 4 to turn off the MOS transistor T1.
Preferably, the detection circuit is a nand gate U1, the control circuit includes a first triode Q1, and the short-circuit and overcurrent protection method further includes the steps of:
inputting a control signal CON into a NAND gate U1;
when the load is short-circuited, the NAND gate U1 outputs high level, and the first triode Q1 is conducted.
The voltage of the output end of the control end 4 is pulled down by the first triode Q1, and the MOS tube T1 is closed.
Further, the present application can also provide a vehicle using the short-circuit overcurrent protection circuit or method.
The foregoing has described the general principles, essential features, and advantages of the application. It will be understood by those skilled in the art that the present application is not limited to the embodiments described above, which are merely illustrative of the principles of the application, but that various changes and modifications may be made without departing from the spirit and scope of the application, and these changes and modifications are intended to be within the scope of the application as claimed. The scope of protection claimed by this application is defined by the following claims and their equivalents.
Claims (8)
1. The utility model provides a short circuit overcurrent protection circuit of MOS pipe high limit output which characterized in that: the detection circuit is an NAND gate, the NAND gate comprises a power pin, a first input end and a second input end, the first input end is connected with the eighth resistor, the second input end is connected with the input end of the control end, the input end of the control end is connected with the power pin of the NAND gate through the delay circuit, the output end of the control end is connected with a subsequent driving circuit of an MOS (metal oxide semiconductor) transistor, the output end of the NAND gate is connected with the control circuit, the control circuit is connected with the output end of the control end, and the control circuit is suitable for pulling down the output end voltage of the control end to close the MOS transistor.
2. The short-circuit over-current protection circuit of high-side output of MOS transistor of claim 1, characterized in that: the input end of the control end is suitable for receiving a control signal for controlling the on-off of the MOS tube, the control end comprises a first resistor, the control signal passes through the first resistor and is connected with a follow-up drive circuit of the MOS tube, and the control circuit is a pull-down circuit and is suitable for pulling down the output voltage of the first resistor.
3. The short-circuit over-current protection circuit of high-side output of MOS transistor of claim 2, characterized in that: the control circuit comprises a first triode and a fifth resistor, the first resistor is connected with a collector or an emitter of the first triode, a base of the first triode is connected with an output end of the detection circuit and is grounded through the fifth resistor, and the other pole of the first triode is grounded.
4. The MOS transistor high-side output short-circuit overcurrent protection circuit as set forth in any one of claims 1 to 3, wherein: the delay circuit is an RC delay circuit, the delay circuit comprises a first capacitor and a sixth resistor, the control end is connected with the first end of the sixth resistor, the second end of the sixth resistor is connected with the first capacitor and a power pin of the detection circuit, and the first capacitor is grounded.
5. The MOS transistor high-side output short-circuit overcurrent protection circuit as set forth in any one of claims 1 to 3, wherein: the eighth resistor is connected with the seventh resistor in series, one end of the seventh resistor is connected with the output end of the MOS tube, the other end of the seventh resistor is connected with the eighth resistor, and the eighth resistor is grounded.
6. A short-circuit overcurrent protection method of MOS tube high-side output is applied to the short-circuit overcurrent protection circuit of MOS tube high-side output according to any one of claims 1 to 5, and is characterized by comprising the following steps:
inputting a control signal into a power supply pin of the NAND gate through a delay circuit to delay and open the NAND gate to wait for the output voltage of the MOS tube to rise;
inputting the voltage at the high potential end of the eighth resistor and a control signal into the input end of the NAND gate;
the NAND gate outputs a high level to the control circuit;
the control circuit pulls down the voltage of the output end of the control end to enable the MOS tube to be closed.
7. The method of claim 6, wherein the control circuit comprises a first transistor, and the method further comprises:
when the load is short-circuited, the NAND gate outputs high level, and the first triode is conducted;
the voltage of the output end of the control end is pulled down by the first triode, and the MOS tube is closed.
8. A vehicle, characterized in that the short-circuit overcurrent protection circuit or method of the high-side output of the MOS transistor according to any one of claims 1 to 7 is used.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202211013168.7A CN115102532B (en) | 2022-08-23 | 2022-08-23 | Short-circuit overcurrent protection circuit and method for high-side output of MOS (Metal oxide semiconductor) tube and vehicle |
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| CN202211013168.7A CN115102532B (en) | 2022-08-23 | 2022-08-23 | Short-circuit overcurrent protection circuit and method for high-side output of MOS (Metal oxide semiconductor) tube and vehicle |
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| CN115102532A (en) | 2022-09-23 |
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