CN216355939U - High-side output circuit with protection - Google Patents

High-side output circuit with protection Download PDF

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Publication number
CN216355939U
CN216355939U CN202122355207.9U CN202122355207U CN216355939U CN 216355939 U CN216355939 U CN 216355939U CN 202122355207 U CN202122355207 U CN 202122355207U CN 216355939 U CN216355939 U CN 216355939U
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triode
resistor
main
circuit
voltage
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陈守和
李友全
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Huizhou Foryou General Electronics Co Ltd
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Huizhou Foryou General Electronics Co Ltd
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Abstract

The utility model relates to the technical field of circuit short-circuit protection, and provides a high-side output circuit with protection.A proper resistor, a proper capacitor and a proper triode are added on the basis of a high-side MOS (metal oxide semiconductor) tube circuit to form a switch control module and a short-circuit protection module, so that on one hand, a control signal of a main control end is transmitted through the switch control module to control the on-off of an output main loop between a main input end VIN and a main output end VOUT; and ON the other hand, the short-circuit protection module connected with the main output end is designed to detect whether the output main loop is short-circuited in real time, cut OFF the internal main loop of the switch control module in time when the short circuit is found, and disconnect the output main loop by blocking the control signal of ON/OFF of the main control end, so that the short-circuit protection function is realized.

Description

High-side output circuit with protection
Technical Field
The utility model relates to the technical field of circuit short-circuit protection, in particular to a high-side output circuit with protection.
Background
Inside the electronic product, the power supply needs to supply power to the load module. When the peripheral (external equipment) is in butt joint, power needs to be supplied to the peripheral, such as a computer USB interface, a television HDMI interface and the like. In a vehicle-mounted IVI (information entertainment system) product, a host part can be in butt joint with a plurality of peripheral devices, such as a radio antenna, a navigation antenna, 360 panoramas, a T-BOX (T-Box) BOX, a central control display screen and the like, wherein most of the peripheral devices need to be powered by a host end.
No matter the power supply design inside the product or the power supply design of the peripheral equipment, except that the basic requirements such as voltage, current and the like are required to be met, when the load (inside or outside) is in short circuit abnormality, the product cannot be damaged by devices, and cannot smoke or catch fire. When the short circuit disappears abnormally, the product can be recovered to be normal. Therefore, a short-circuit protection module is required to be disposed inside the electronic product.
However, the conventional short-circuit protection circuit generally adopts a power supply IC with short-circuit detection, which is expensive and cannot adjust the voltage value required for starting the low-voltage protection.
Therefore, the prior art is in need of further improvement.
Disclosure of Invention
The utility model provides a high-side output circuit with protection, which solves the technical problems that the conventional short-circuit protection circuit is expensive and cannot adjust a low-voltage protection threshold value.
In order to solve the technical problems, the utility model provides a high-side output circuit with protection, which comprises a main input end, a main output end and a main control end, and is characterized in that: the device also comprises a switch control module and a short-circuit protection module; the switch control module is provided with a signal input end, a signal output end and a control signal input end, wherein the signal input end is connected with the main input end, the signal output end is connected with the main output end, and the control signal input end is connected with the main control end; one end of the short-circuit protection module is connected into the internal main loop of the switch control module, and the other end of the short-circuit protection module is used as a short-circuit detection end to be connected with the main output end.
On one hand, the basic scheme is that on the basis of a high-side MOS tube circuit, appropriate resistors, capacitors and triodes are added to form a switch control module and a short-circuit protection module, and on the other hand, a control signal of a main control end is transmitted through the switch control module to control the on-off of an output main loop between a main input end and a main output end; and on the other hand, the short-circuit protection module connected with the main output end is designed to detect whether the output main loop is short-circuited in real time, cut off the internal main loop of the switch control module in time when the short circuit is found, and disconnect the output main loop by blocking the control signal of the main control end, so that the short-circuit protection function is realized.
In a further embodiment, the switch control module comprises a first triode, a second triode, a third triode, a first resistor, a second resistor, a third resistor, an eighth resistor and a high-side MOS transistor;
when the first triode, the second triode and the third triode are respectively an NPN type triode, a PNP type triode and an NPN type triode, and the high side MOS tube is a P channel MOS tube:
the base electrode of the first triode is connected with the main control end, the emitting electrode of the first triode is grounded, and the collector electrode of the first triode is connected with the base electrode of the second triode through the first resistor; an emitter of the second triode is connected with the main input end, and a collector of the second triode is connected with a base of the third triode through a second resistor; an emitter of the third triode is grounded, and a collector of the third triode is connected with the grid of the high-side MOS tube through a third resistor;
the drain electrode of the high-side MOS tube is connected with the main output end, and the source electrode of the high-side MOS tube is connected with the main input end; and the eighth resistor is connected between the grid and the source of the high-side MOS tube in parallel.
According to the scheme, the triodes connected in sequence form a multistage conducted signal switch, corresponding control signals can be output according to the control level of the main control end, the high-side MOS tube is driven to be conducted or cut off, and signal control of an output main loop is achieved.
In a further embodiment, the short protection module comprises a fourth triode, a fourth resistor, a first capacitor, a first diode;
when the fourth triode is an NPN triode: one end of the fourth resistor is connected with the collector of the second triode, and the other end of the fourth resistor is connected with the base of the fourth triode; a collector of the fourth triode is connected with a collector of the second triode, and an emitter of the fourth triode is connected with the main output end through the first diode; one end of the first capacitor is connected with the base electrode of the fourth triode, and the other end of the first capacitor is grounded.
The short-circuit protection module comprises a fourth triode, a fourth resistor, a first capacitor and a first diode, and the power supply of the main input end is obtained by utilizing the energy storage characteristic of the first capacitor, so that the base voltage requirement of the fourth triode is met; the first diode is connected to the main output end, and after the main output end is short-circuited to the ground, the negative electrode of the first diode is pulled down to the ground, so that the fourth triode is conducted; and the fourth triode connected with the switch control module pulls down the base voltage of the third triode to cut off the base voltage, namely, a cut-off signal is output, so that the high-side MOS tube is cut off to cut off the output main loop, and short circuit control is realized through the discrete element, thereby not only effectively protecting the short-circuited main loop, but also reducing the short circuit protection cost.
In a further embodiment, the low-voltage protection circuit further comprises a low-voltage protection module connected in series with an inner main loop of the switch control module, wherein the low-voltage protection module comprises a sixth resistor and a seventh resistor; one end of the sixth resistor is connected with a collector of the second triode, the other end of the sixth resistor is connected with a collector of the fourth triode, one end of the seventh resistor is connected between the sixth resistor and the second resistor, and the other end of the seventh resistor is grounded.
The scheme is provided with the low-voltage protection module, and when the voltage of the output main loop is lower (lower than a preset threshold), the base voltage of the third triode is pulled down through voltage division, so that the automatic turn-off of the circuit is realized; and the self-defined adjustment of the voltage starting value of the low-voltage protection is realized by adjusting the resistors of the sixth resistor and the seventh resistor, namely, the voltage threshold value of the low-voltage protection is adjusted by adjusting the low-voltage protection module, so that the cost is low, and the effect is obvious.
In a further embodiment, the switch control module further comprises a surge protection capacitor connected in parallel between the source and the gate of the high-side MOS transistor.
The scheme sets the surge protection capacitor connected with the high-side MOS tube in parallel, and the energy storage characteristic of the surge protection capacitor is utilized, so that the impact of transient current on the preceding stage and the MOS tube can be effectively reduced.
In a further embodiment, the present invention further comprises a leakage module electrically connected to the short-circuit protection module; the current leakage module comprises a fifth resistor, a ninth resistor, a fifth triode and a sixth triode:
when the fifth triode and the sixth triode are both NPN type triodes:
the base electrode of the fifth triode is connected with the main control end, the collector electrode of the fifth triode is connected with the base electrode of the sixth triode and is connected with a power supply end through the ninth resistor, and the emitting electrode of the fifth triode is grounded;
and the collector electrode of the sixth triode is connected with the base electrode of the fourth triode through the fifth resistor.
The leakage module is designed according to the scheme and used for discharging the charges stored in the first capacitor when the high-side MOS tube is shut down, so that after the output of the high-side MOS tube is avoided being closed, the base voltage of the fourth triode exceeds the voltage of the main output end which is still rising and is not established due to the fact that the charges in the first capacitor are not discharged completely, the fourth triode is conducted before the high-side MOS tube, and normal starting of the circuit is guaranteed.
In a further embodiment, the present invention further includes a main control module and a voltage dividing circuit connected to the main output terminal, wherein the voltage dividing circuit includes a first voltage dividing resistor and a second voltage dividing resistor connected in series; one end of the first voltage-dividing resistor is connected with the main output end, one end of the second voltage-dividing resistor is grounded, and an AD port of the main control module is connected to a voltage-dividing point between the first voltage-dividing resistor and the second voltage-dividing resistor.
According to the scheme, a voltage division circuit consisting of a first voltage division resistor and a second voltage division resistor is additionally arranged at the main output end, and the voltage abnormality of the loop can be conveniently recorded by accessing a voltage division point between the first voltage division resistor and the second voltage division resistor to an AD port of a main control module.
Drawings
Fig. 1 is a hardware circuit diagram of a high-side output circuit with protection according to embodiment 1 of the present invention;
fig. 2 is a hardware circuit diagram of a high-side output circuit with protection according to embodiment 2 of the present invention;
fig. 3 is a hardware circuit diagram of a high-side output circuit with protection according to embodiment 3 of the present invention;
fig. 4 is a hardware circuit diagram of a high-side output circuit with protection according to embodiment 4 of the present invention;
wherein: the high-side MOS transistor M1, a main control end ON/OFF, a main input end VIN, a main output end VOUT, a first triode Q1-a sixth triode Q6, a first resistor R1-a ninth resistor R9, a first capacitor C1, a surge protection capacitor C2, a first diode D1, a first divider resistor R10, a second divider resistor R11, an equivalent load resistor R (L) and an equivalent load capacitor C (L).
Detailed Description
The embodiments of the present invention will be described in detail below with reference to the accompanying drawings, which are given solely for the purpose of illustration and are not to be construed as limitations of the utility model, including the drawings which are incorporated herein by reference and for illustration only and are not to be construed as limitations of the utility model, since many variations thereof are possible without departing from the spirit and scope of the utility model.
Example 1
The high-side output circuit with protection provided by the embodiment, as shown in fig. 1, includes a main input terminal VIN, a main output terminal VOUT, a main control terminal ON/OFF, a switch control module, and a short-circuit protection module; the switch control module is provided with a signal input end, a signal output end and a control signal input end, wherein the signal input end is connected with the main input end VIN, the signal output end is connected with the main output end VOUT, and the control signal input end is connected with the main control end ON/OFF; one end of the short-circuit protection module is connected into an internal main loop of the switch control module, and the other end of the short-circuit protection module is used as a short-circuit detection end and is connected with a main output end VOUT.
In fig. 1, the resistor r (l) and the capacitor c (l) respectively represent an equivalent load resistor and an equivalent load capacitor.
In this embodiment, the switch control module includes a first transistor Q1, a second transistor Q2, a third transistor Q3, a first resistor R1, a second resistor R2, a third resistor R3, an eighth resistor R8, and a high-side MOS transistor M1;
preferably, the switch control module further comprises a surge protection capacitor C2 connected in parallel between the source and the gate of the high-side MOS transistor.
The embodiment utilizes the energy storage characteristic of the surge protection capacitor C2, and can effectively reduce the impact of transient current on the preceding stage and the MOS tube.
When the first triode Q1, the second triode Q2, and the third triode Q3 are respectively an NPN type triode, a PNP type triode, and an NPN type triode, and the high side MOS transistor is a P channel MOS transistor:
the base electrode of the first triode Q1 is connected with the ON/OFF of the main control end, the emitter electrode is grounded, and the collector electrode is connected with the base electrode of the second triode Q2 through a first resistor R1; an emitter of the second triode Q2 is connected with the main input end VIN, and a collector of the second triode Q2 is connected with a base of the third triode Q3 through a second resistor R2; an emitter electrode of the third triode Q3 is grounded, and a collector electrode of the third triode Q3 is connected with a grid electrode G of the high-side MOS transistor M1 through a third resistor R3;
the drain D of the high-side MOS transistor M1 is connected with the main output end, and the source S is connected with the main input end; the eighth resistor R8 is connected in parallel between the gate G and the source S of the high-side MOS transistor M1.
In the embodiment, a plurality of sequentially connected triodes are designed to form a multi-stage conducted signal switch, and a corresponding control signal can be output according to the control level of the ON/OFF of the main control end to drive the high-side MOS transistor M1 to be conducted or disconnected, so that the signal control of the output main loop is realized.
In this embodiment, the short-circuit protection module includes a fourth transistor Q4, a fourth resistor R4, a first capacitor C1, and a first diode D1;
when the fourth transistor Q4 is an NPN transistor: one end of a fourth resistor R4 is connected with the collector of the second triode Q2, and the other end is connected with the base of a fourth triode Q4; the collector of the fourth triode Q4 is connected with the collector of the second triode Q3, and the emitter is connected with the main output terminal VOUT through a first diode D1; one end of the first capacitor C1 is connected to the base of the fourth transistor Q4, and the other end is grounded.
In this embodiment, a short-circuit protection module including a fourth transistor Q4, a fourth resistor R4, a first capacitor C1, and a first diode D1 is designed, and the energy storage characteristic of the first capacitor C1 is utilized to obtain the power supply of a main input terminal VIN, so as to meet the requirement of a base voltage of the fourth transistor Q4; the first diode D1 is designed to be connected to the main output terminal VOUT, and after the main output terminal VOUT is shorted to ground, its negative pole is pulled down to ground, thereby turning on the fourth transistor Q4; and the fourth triode Q4 connected to the switch control module pulls down the base voltage of the third triode Q3 to cut off the base voltage, namely, outputs a turn-off signal, so that the high-side MOS transistor M1 cuts off the output main loop, and realizes short-circuit control through discrete elements, thereby not only effectively protecting the short-circuited main loop, but also reducing the short-circuit protection cost.
Embodiment 2 as shown in fig. 2, the embodiment of the present invention is different from embodiment 1 in that it further includes a low voltage protection module formed by a sixth resistor R6 and a seventh resistor R7; one end of a sixth resistor R6 is connected with the collector of the second triode Q2, the other end of the sixth resistor R6 is connected with the collector of the fourth triode Q4, one end of a seventh resistor R7 is connected between the sixth resistor R6 and the second resistor R2, and the other end of the seventh resistor R7 is grounded.
In the embodiment, the low-voltage protection module is arranged, and when the voltage of the output main loop is lower (lower than a preset threshold), the base voltage of the third triode Q3 is pulled down through voltage division, so that the automatic turn-off of the circuit is realized; the self-defined adjustment of the voltage starting value of the low-voltage protection is realized by adjusting the resistances of the sixth resistor R6 and the seventh resistor R7, namely, the voltage threshold of the low-voltage protection is adjusted by adjusting the low-voltage protection module, so that the cost is low, and the effect is obvious.
Example 3
As shown in fig. 3, the embodiment of the present invention is different from the above embodiment 2 in that the present invention further includes a drain module connected to the base of the fourth transistor Q4, where the drain module includes a fifth resistor R5, a ninth resistor R9, a fifth transistor Q5, and a sixth transistor Q6:
when the fifth transistor Q5 and the sixth transistor Q6 are both NPN transistors:
the base electrode of the fifth triode Q5 is connected with the ON/OFF of the main control end, the collector electrode of the fifth triode Q5 is connected with the base electrode of the sixth triode Q6 and is connected with the power supply end through a ninth resistor R9, and the emitting electrode of the fifth triode Q5 is grounded;
the collector of the sixth transistor Q6 is connected to the base of the fourth transistor Q4 through a fifth resistor R5.
The current leakage module is designed in this embodiment to drain the charges stored in the first capacitor C1 when the circuit is turned off, so as to prevent the base voltage of the fourth triode Q4 from exceeding the voltage of the main output terminal VOUT that is still rising and is not yet established due to incomplete discharge of the charges in the first capacitor C1 after the high-side MOS transistor M1 is turned off, so that the fourth triode Q4 is turned on before the high-side MOS transistor M1, thereby ensuring normal start of the circuit.
Example 4
As shown in fig. 4, the embodiment of the present invention is different from the embodiments 1, 2, and 3 in that, on the basis of any one of the output protection circuits of the embodiments 1, 2, and 3, a main control module and a voltage dividing circuit connected to a main output terminal VOUT are added, where the voltage dividing circuit includes a first voltage dividing resistor R10 and a second voltage dividing resistor R11 connected in series; one end of the first voltage-dividing resistor R10 is connected with the main output terminal VOUT, one end of the second voltage-dividing resistor R11 is grounded, and the AD port of the main control module is connected to a voltage-dividing point between the first voltage-dividing resistor R10 and the second voltage-dividing resistor R11.
In this embodiment, a voltage dividing circuit formed by a first voltage dividing resistor R10 and a second voltage dividing resistor R11 is added to the main output terminal VOUT, and the voltage abnormality of the loop is conveniently recorded by accessing an AD port MCU-AD of the main control module to a voltage dividing point between the first voltage dividing resistor R10 and the second voltage dividing resistor R11.
Taking embodiment 4 in which a main control module and a voltage dividing circuit connected to the main output terminal VOUT are added in embodiment 3 as an example, the working process of the high-side output circuit with protection of the present invention is described as follows:
(1) when the circuit is working normally.
After the control signal of the main control end ON/OFF changes to high level (for example, 3.3V), the first triode Q1, the second triode Q2, the third triode Q3 and the high-side MOS tube M1 are sequentially conducted, and output VOUT is established, wherein VOUT is approximately equal to VIN.
At this time, the main input terminal VIN charges the first capacitor C1 through the second transistor Q2 and the fourth resistor R4, and the base voltage V (b) of the fourth transistor Q4Q4Rise, but because the voltage at the main output VOUT is higher than V (b)Q4Therefore, the fourth transistor Q4 is always in the off state.
In V (b)Q4During the rising process, when the voltage exceeds a certain value (the voltage divided by the sixth resistor R6 and the seventh resistor R7) and further exceeds the voltage drop V (bc) of the b and c of the fourth triode Q4Q4After (for example, 0.7V), only the b and c junctions are conducted, and the fourth triode Q4 is still in a cut-off state;
when V (b)Q4After stabilization, the fourth transistor Q4 is in the off state and the first diode D1 has no current.
Meanwhile, when the main control terminal ON/OFF is at a high level, the fifth transistor Q5 is turned ON, and the sixth transistor Q6 is turned OFF, so that the operation of the fourth transistor Q4 is not affected.
(2) When the circuit is short-circuited (after the main output terminal VOUT is short-circuited to the ground).
The cathode of the first diode D1 is pulled to ground, the fourth transistor Q4 is turned on, and the voltage VF1 at the F1 point is clamped at VD1+ V (ce)Q4It is called V (off)Q3Order V (off)Q3Less than V (on)Q3(by selecting the second resistor R2, the V (on) which can turn on the third triode Q3 is determined)Q3). Namely: when the main output terminal VOUT is short-circuited, the voltage at the point F1 is pulled down by the fourth transistor Q4, so that the voltage VF1 is not enough to turn on the third transistor Q3, the third transistor Q3 is cut off, the high-side MOS transistor M1 is cut off, the output main loop is closed, and the high-side MOS transistor M1 is protected.
The third transistor Q3 may also be a transistor without internal resistance, which only needs to divide the voltage applied to its base so that the base voltage V (b) of the third transistor Q3 is lower than the conducting voltage (e.g. 0.7V) when the output is short-circuited, i.e. Q3.
(3) When the circuit is shut down.
When the main control terminal ON/OFF is at a low level, the fifth transistor Q5 is turned OFF, the sixth transistor Q6 is turned ON, the charge stored in the first capacitor C1 is drained to ground through the fifth resistor R5,thereby avoiding the base voltage V (b) of the fourth triode Q4 caused by the possible incomplete discharge of the charges in the first capacitor C1 after the output of the high side MOS transistor M1 is turned offQ4When the voltage of the not-yet-established main output terminal VOUT exceeds the voltage still rising to make the fourth transistor Q4 conduct before the high side MOS transistor M1, the voltage VF1 of F1 will be clamped at VD1+ V (ce)Q4And is about VD1, thereby causing the high side MOS to not conduct and the output voltage VOUT to not build.
On the one hand, the embodiment of the utility model transmits a control signal of a main control end through the switch control module to control the on-off of an output main loop between a main input end VIN and a main output end VOUT; and ON the other hand, the short-circuit protection module connected with the main output end is designed to detect whether the output main loop is short-circuited in real time, cut OFF the internal main loop of the switch control module in time when the short circuit is found, and disconnect the output main loop by blocking the control signal of ON/OFF of the main control end, so that the short-circuit protection function is realized.
The above embodiments are preferred embodiments of the present invention, but the present invention is not limited to the above embodiments, and any other changes, modifications, substitutions, combinations, and simplifications which do not depart from the spirit and principle of the present invention should be construed as equivalents thereof, and all such changes, modifications, substitutions, combinations, and simplifications are intended to be included in the scope of the present invention.

Claims (7)

1. The utility model provides a high limit output circuit of area protection, includes main input end, main output end, main control end, its characterized in that: the device also comprises a switch control module and a short-circuit protection module; the switch control module is provided with a signal input end, a signal output end and a control signal input end, wherein the signal input end is connected with the main input end, the signal output end is connected with the main output end, and the control signal input end is connected with the main control end; one end of the short-circuit protection module is connected into the internal main loop of the switch control module, and the other end of the short-circuit protection module is used as a short-circuit detection end to be connected with the main output end.
2. The protected high-side output circuit of claim 1, wherein: the switch control module comprises a first triode, a second triode, a third triode, a first resistor, a second resistor, a third resistor, an eighth resistor and a high-side MOS (metal oxide semiconductor) tube;
when the first triode, the second triode and the third triode are respectively an NPN type triode, a PNP type triode and an NPN type triode, and the high side MOS tube is a P channel MOS tube:
the base electrode of the first triode is connected with the main control end, the emitting electrode of the first triode is grounded, and the collector electrode of the first triode is connected with the base electrode of the second triode through the first resistor; an emitter of the second triode is connected with the main input end, and a collector of the second triode is connected with a base of the third triode through a second resistor; an emitter of the third triode is grounded, and a collector of the third triode is connected with the grid of the high-side MOS tube through a third resistor;
the drain electrode of the high-side MOS tube is connected with the main output end, and the source electrode of the high-side MOS tube is connected with the main input end; and the eighth resistor is connected between the grid and the source of the high-side MOS tube in parallel.
3. The protected high-side output circuit of claim 2, wherein the short-circuit protection module comprises a fourth triode, a fourth resistor, a first capacitor, a first diode;
when the fourth triode is an NPN triode: one end of the fourth resistor is connected with the collector of the second triode, and the other end of the fourth resistor is connected with the base of the fourth triode; a collector of the fourth triode is connected with a collector of the second triode, and an emitter of the fourth triode is connected with the main output end through the first diode; one end of the first capacitor is connected with the base electrode of the fourth triode, and the other end of the first capacitor is grounded.
4. A protected high-side output circuit according to claim 3, wherein: the low-voltage protection module is connected in series with an internal main loop of the switch control module and comprises a sixth resistor and a seventh resistor; one end of the sixth resistor is connected with the collector of the second triode, the other end of the sixth resistor is connected with the collector of the fourth triode, one end of the seventh resistor is connected between the sixth resistor and the second resistor, and the other end of the seventh resistor is grounded.
5. The protected high-side output circuit of claim 2, wherein: the switch control module further comprises a surge protection capacitor connected in parallel between the source electrode and the grid electrode of the high-side MOS tube.
6. The protected high-side output circuit according to claim 3, further comprising a current-draining module, wherein the current-draining module is electrically connected to the short-circuit protection module; the current leakage module comprises a fifth resistor, a ninth resistor, a fifth triode and a sixth triode:
when the fifth triode and the sixth triode are both NPN type triodes:
the base electrode of the fifth triode is connected with the main control end, the collector electrode of the fifth triode is connected with the base electrode of the sixth triode and is connected with a power supply end through the ninth resistor, and the emitting electrode of the fifth triode is grounded;
and the collector of the sixth triode is connected with the short-circuit protection module through the fifth resistor.
7. A protected high-side output circuit as claimed in claim 1, 4 or 6, wherein: the voltage divider circuit comprises a first voltage divider resistor and a second voltage divider resistor which are connected in series; one end of the first voltage-dividing resistor is connected with the main output end, one end of the second voltage-dividing resistor is grounded, and an AD port of the main control module is connected to a voltage-dividing point between the first voltage-dividing resistor and the second voltage-dividing resistor.
CN202122355207.9U 2021-09-27 2021-09-27 High-side output circuit with protection Active CN216355939U (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115102532A (en) * 2022-08-23 2022-09-23 宁波兴为汽车电子有限公司 Short-circuit overcurrent protection circuit and method for high-side output of MOS (Metal oxide semiconductor) tube and vehicle

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115102532A (en) * 2022-08-23 2022-09-23 宁波兴为汽车电子有限公司 Short-circuit overcurrent protection circuit and method for high-side output of MOS (Metal oxide semiconductor) tube and vehicle
CN115102532B (en) * 2022-08-23 2022-11-15 宁波兴为汽车电子有限公司 Short-circuit overcurrent protection circuit and method for high-side output of MOS (Metal oxide semiconductor) tube and vehicle

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