CN115101581A - Flexible semiconductor structure, system and forming method thereof - Google Patents
Flexible semiconductor structure, system and forming method thereof Download PDFInfo
- Publication number
- CN115101581A CN115101581A CN202210750557.1A CN202210750557A CN115101581A CN 115101581 A CN115101581 A CN 115101581A CN 202210750557 A CN202210750557 A CN 202210750557A CN 115101581 A CN115101581 A CN 115101581A
- Authority
- CN
- China
- Prior art keywords
- flexible
- sandwich structure
- semiconductor
- strip
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 105
- 238000000034 method Methods 0.000 title claims abstract description 20
- 239000010409 thin film Substances 0.000 claims abstract description 37
- 230000008859 change Effects 0.000 claims abstract description 7
- 239000000758 substrate Substances 0.000 claims description 57
- 239000010410 layer Substances 0.000 claims description 29
- 239000010408 film Substances 0.000 claims description 16
- 229920001721 polyimide Polymers 0.000 claims description 11
- 239000004642 Polyimide Substances 0.000 claims description 6
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000002356 single layer Substances 0.000 claims description 2
- 238000010276 construction Methods 0.000 claims 1
- 239000000463 material Substances 0.000 description 26
- 229910052751 metal Inorganic materials 0.000 description 14
- 239000002184 metal Substances 0.000 description 14
- 229920002120 photoresistant polymer Polymers 0.000 description 10
- 230000009471 action Effects 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 238000005452 bending Methods 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000004205 dimethyl polysiloxane Substances 0.000 description 2
- 238000007687 exposure technique Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000002313 adhesive film Substances 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005090 crystal field Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- -1 polydimethylsiloxane Polymers 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
Abstract
A flexible semiconductor structure, a system and a method of forming the same are provided. The flexible semiconductor structure comprises a flexible multistable three-dimensional microstructure (1) and a semiconductor thin film (2), wherein the flexible multistable three-dimensional microstructure comprises a sandwich structure (12), the sandwich structure (12) is a plane structure capable of buckling and deforming in a first direction and a second direction which are intersected with each other, and the semiconductor thin film (2) is formed on one side of the sandwich structure (12) in a third direction which is perpendicular to the first direction and the second direction and deforms along with the deformation of the sandwich structure (12) so as to change the energy gap of the semiconductor thin film (2). By adopting the technical scheme, the flexible semiconductor structure capable of adjusting the conductive performance can be obtained.
Description
Technical Field
The present application relates to the field of engineering material manufacturing technologies, and in particular, to a flexible semiconductor structure, a system thereof, and a method for forming the same.
Background
Currently, the electrical conductivity of semiconductors can be enhanced by introducing biaxial strain to the semiconductor material through the substrate or uniaxial strain to the semiconductor material through other semiconductor processes to enhance carrier mobility. This process of using strain to manipulate the physical properties of a material is referred to as "strain engineering". Strain engineering has been widely used in the field of regulating semiconductor energy bands and the like.
The energy gap, one of the intrinsic properties of semiconductor materials, arises from a stable periodic crystal potential field within the material. When the crystal lattice of the crystal is strained and distorted, the original stable periodic crystal field is changed, and the energy gap of the material is correspondingly changed. The physical parameters and the geometric parameters of the material can be designed to change the energy band structure of the material and regulate and control the energy gap size of the material so as to optimize the electrical and optical properties of the semiconductor and obtain a new device material with more excellent performance.
The way in which semiconductor materials are stressed has been mainly achieved by epitaxy, i.e. the intrinsic internal stress is obtained by dislocations caused by the lattice mismatch of the growing material and the substrate. The method is simple and easy to realize, but the obtained stress has no gradient distribution, so the stress magnitude direction cannot be changed. This approach is limited where the conductive properties of the semiconductor material need to be adjusted. Therefore, there is a need for a flexible semiconductor structure that can adjust the conductive properties.
Disclosure of Invention
The present application has been made in view of the above-mentioned state of the art and it is an object of the present application to provide a flexible semiconductor structure capable of adjusting the conductive properties, and a system and method of forming the same.
A first aspect of the present application provides a flexible semiconductor structure including a flexible multistable three-dimensional microstructure and a semiconductor thin film, the flexible multistable three-dimensional microstructure including a sandwich structure which is a planar structure capable of buckling deformation in a first direction and a second direction intersecting each other, the semiconductor thin film being formed on one side of the sandwich structure in a third direction perpendicular to the first direction and the second direction and deformed with deformation of the sandwich structure to change an energy gap of the semiconductor thin film.
In at least one embodiment, the sandwich structure comprises a first end strip extending along the first direction, a second end strip, and a plurality of connecting strips connected at one end to the first end strip and at the other end to the second end strip, the first end strip and the second end strip being arranged spaced apart along the second direction,
at least one of the first end strap, the second end strap, and the plurality of connection straps can be electromagnetically energized with an ampere force.
In at least one embodiment, the sandwich structure is buckling deformed in the first direction before the ampere force is applied, and the sandwich structure is buckling deformed in the second direction after the ampere force is applied.
In at least one embodiment, the flexible multistable three-dimensional microstructure further comprises a flexible substrate capable of tensile deformation, the flexible substrate being pre-strained in the first direction and pre-strained in the second direction, the flexible substrate being connected to the sandwich structure of planar structures, the flexible substrate being located on the opposite side of the sandwich structure from the semiconductor thin film in the third direction.
In at least one embodiment, the sandwich structure comprises two substrate layers overlapping in the third direction and one electrically conductive layer located between the two substrate layers,
the first end strip, the second end strip, and one or more of the plurality of connection strips have the conductive layer disposed therein so that an electric current can be applied thereto.
In at least one embodiment, the base layer is made of polyimide, the thickness of the single layer of the base layer is 5-15 microns,
the conductive layer is made of gold and has a thickness of 200-400 nm,
the semiconductor film is made of indium tin oxide and has a thickness of 200-400 nm.
A second aspect of the present application provides a flexible semiconductor structure system comprising:
the flexible semiconductor structure according to the above-mentioned technical solution;
a strain applying portion for stretching the flexible substrate and releasing the stretching of the flexible substrate; a current applying section for applying a current to the sandwich structure; and
a magnetic field applying section for applying a magnetic field to the sandwich structure.
In a third aspect of the application, a method for forming a flexible semiconductor structure is provided, which comprises forming a semiconductor film on a flexible multistable three-dimensional microstructure,
the flexible multistable three-dimensional microstructure includes a sandwich structure which is a planar structure capable of buckling deformation in a first direction and a second direction intersecting each other, and the semiconductor thin film is formed on one side of the sandwich structure in a third direction perpendicular to the first direction and the second direction and deformed with deformation of the sandwich structure to change an energy gap of the semiconductor thin film.
In at least one embodiment, the flexible multistable three-dimensional microstructure comprises a flexible substrate pre-strained in a first direction and pre-strained in a second direction,
the forming method comprises the following steps: connecting the sandwich structure to the flexible substrate to which the first pre-strain and the second pre-strain are applied.
In at least one embodiment, a method of forming a flexible semiconductor structure includes:
releasing the first pre-strain applied to the flexible substrate, causing both sides of the sandwich structure in the second direction to bulge in the third direction;
applying a magnetic field to the sandwich structure;
applying an electric current to the sandwich structure, so that part of the sandwich structure is applied with an ampere force under the action of electromagnetism; and
releasing a second pre-strain applied to the flexible substrate to bring both sides of the sandwich structure in the second direction close to each other in the second direction,
the sandwich structure comprising a first end strip extending along the first direction, a second end strip, and a plurality of connecting strips connected at one end to the first end strip and at the other end to the second end strip, the first and second end strips being arranged spaced apart along the second direction,
wherein an energy gap of a semiconductor thin film formed on the first end strap and the second end strap is adjusted by changing a magnitude of the first pre-strain,
adjusting an energy gap of the semiconductor thin film formed on the connection pad by changing the second pre-strain, and/or adjusting an energy gap of the semiconductor thin film formed on the connection pad by adjusting a direction of the current.
By adopting the technical scheme, the flexible semiconductor structure capable of adjusting the conductive performance can be obtained.
Drawings
Fig. 1 shows a schematic view of a flexible semiconductor structure according to an embodiment of the present application.
Fig. 2 shows a cross-sectional view of a sandwich structure according to an embodiment of the present application.
FIG. 3 shows a schematic diagram of steps for fabricating a flexible semiconductor structure according to one embodiment of the present application.
Fig. 4 shows a schematic perspective view of a flexible semiconductor structure when only the first direction pre-stretching of the flexible substrate is released, according to an embodiment of the present application.
Fig. 5 illustrates a schematic perspective view of a flexible semiconductor structure switched to a first stable structure according to one embodiment of the present application.
Fig. 6 illustrates a perspective view of a flexible semiconductor structure switched to a second stable structure according to an embodiment of the present application.
Fig. 7 illustrates a perspective view of a flexible semiconductor structure switched to a third stable structure according to one embodiment of the present application.
Fig. 8 illustrates a perspective view of a flexible semiconductor structure switched to a fourth stable structure according to one embodiment of the present application.
Detailed Description
Exemplary embodiments of the present application are described below with reference to the accompanying drawings. It should be understood that the detailed description is only intended to teach one skilled in the art how to practice the present application, and is not intended to be exhaustive or to limit the scope of the application.
The technical idea of the present application is briefly described below. The application provides a flexible semiconductor structure, a flexible semiconductor structure system and a forming method of the flexible semiconductor structure. The flexible semiconductor structure comprises a flexible multistable three-dimensional microstructure 1 and a semiconductor thin film 2. The semiconductor film 2 is formed on the flexible multistable three-dimensional microstructure 1 and deforms along with the deformation of the flexible multistable three-dimensional microstructure 1 so as to change the energy gap of the semiconductor film 2. According to the present application, the conductive property of the semiconductor thin film 2 can be changed by changing the energy gap of the semiconductor thin film 2.
Unless otherwise specified, the first direction in the present application refers to the x direction shown in fig. 1, the second direction refers to the y direction shown in fig. 1, and the third direction refers to the z direction shown in fig. 1.
As shown in fig. 1, the flexible multistable three-dimensional microstructure 1 of the present application comprises a flexible substrate 11 and a sandwich structure 12. Wherein the flexible substrate 11 is a planar structure that is stretchable in a first direction and a second direction, possibly with a tensile strain epsilon in the first direction x Having a tensile strain epsilon in a second direction y . The sandwich structure 12 is also planarStructured and attached to the flexible substrate 11 in a state where the flexible substrate 11 is stretched in the first direction and the second direction. The flexible substrate 11 is located on one side in the third direction of the sandwich structure 12.
In this embodiment mode, the material of the flexible substrate 11 may be PDMS (polydimethylsiloxane). The highly elastic flexible substrate 11 can be prepared by using a standing casting method.
Furthermore, as shown in fig. 2, the sandwich structure 12 comprises a first end strip 121, a second end strip 122 and two connecting strips 123, 124. The first end strip 121 and the second end strip 122 each extend along a first direction, and the first end strip 121 and the second end strip 122 are arranged spaced apart along a second direction. The connecting straps 123, 124 are connected at one end to the first end strap 121 and at the other end to the second end strap 122. Here, the connection strip may be a straight strip or a curved strip.
Further, first end connection portions 121a, 121b as end connection portions may be provided at both ends of the first end strap 121, and second end connection portions 122a, 122b as end connection portions may be provided at both ends of the second end strap 122 to be connected to the flexible substrate 11.
Further, the sandwich structure 12 includes two substrate layers and one conductive layer stacked in the third direction. Wherein the conductive layer is located between the two substrate layers. In this embodiment, the material of the base layer may be polyimide, and the material of the conductive layer may be metal, as shown in step S8 of fig. 3. Here, the conductive layer may extend to the first and second end connection parts 121a and 121b and 122a and 122b so that current can be applied thereto via the first and second end connection parts 121a and 121b and 122a and 122 b.
Specifically, as shown in the shaded area of fig. 2, the conductive layer includes a plurality of individual conductive lines 12a1, 12a 2. The lead 12a1 extends from one end of the first end strap 121 to one end of the second end strap 122 via the connecting strap 123. The conductor 12a2 extends from the other end of the first end strap 121 to the other end of the second end strap 122 via the connecting strap 124.
Further, as shown in fig. 1 and 4, the semiconductor thin film 2 is formed on the side of the sandwich structure 12 opposite to the flexible substrate 11 in the third direction by deposition or the like. That is, in the third direction, the sandwich structure 12 is located between the semiconductor thin film 2 and the flexible substrate 11. The shape of the semiconductor film 2 may be the same as the shape of the sandwich structure 2 constituted by the first end strip 121, the second end strip 122 and the connection strips 123, 124.
Here, the third direction may be considered as a thickness direction of the flexible substrate 11 or the flexible semiconductor structure.
The principle of adjusting the electrical conductivity of the flexible semiconductor structure is explained below.
The conductivity characteristics, such as carrier mobility, of the semiconductor material are determined by the energy band of the semiconductor material. When the energy gap in the energy band is small, transition of energy is easily performed, and thus carrier mobility is larger. The energy gap of a semiconductor material can be altered by altering the strain of the material, thereby altering the conductive properties of the semiconductor material.
In the present embodiment, the formula of the strain at the top position when the strip is arched is:
where ε is the total strain at the top position of the strip, ε membrane Strain, epsilon, of the semiconductor film 2 at the top position of the strip bending Is the bending strain at the top position of the strip, A is the camber height of the strip, h is the thickness of the strip, L 0 Is the initial length of the strip in its natural state. Here, the strip includes the sandwich structure 12 and the semiconductor thin film 2 formed on the sandwich structure 12.
Generally, epsilon membrane Is much smaller than epsilon bending So that ε consists essentially of bending And (4) determining. Thus, it can be seen from the above equation that if ε is to be increased bending Increasing the camber height A, increasing the thickness h, and decreasing the initial length L may be used 0 The method (1). In general, for convenience of adjustmentA manner of increasing the arching height a is employed. In addition, when a is greater than 0, the top of the strip is tensile strained, the energy gap is reduced, and the carrier mobility is greater. When A is less than 0, the top of the strip is in compressive strain, the energy gap is increased, and the carrier mobility is smaller.
Hereinafter, a process of adjusting the conductive performance of the flexible semiconductor structure of the present application will be described.
The flexible substrate 11 is biaxially pre-stretched by being held on a biaxial stretching table. Specifically, the arching height a of the first end strip 121 and the second end strip 122 may be set by setting a first pre-strain of the flexible substrate 11 in the first direction, thereby adjusting the strain of the semiconductor films formed on the first end strip 121 and the second end strip 122. Further, the arching height a of the connection strips 123, 124 may be set by setting a second pre-strain of the flexible substrate 11 in the second direction, thereby adjusting the strain of the semiconductor thin films formed on the connection strips 123, 124.
Then, the sandwich structure 12 is transferred from the silicon wafer onto the biaxially pre-stretched flexible substrate 11, and the sandwich structure 12 is bonded to the flexible substrate 11 with an adhesive at the first end connection portions 121a, 121b and the second end connection portions 122a, 122b, as shown in fig. 1.
Then, the pre-stretching strain of the flexible substrate 11 in the first direction is released, and the pre-stretching strain in the second direction is kept unchanged. At this time, the sandwich structure 12 is deformed from a planar structure to a raised three-dimensional structure by buckling and buckling due to the compressive strain in the first direction, as shown in fig. 4.
Then, a permanent magnet as a magnetic field applying portion is arranged so that its magnetic field direction is along a third direction. The three-dimensional structure of the bumps is placed in a magnetic field B and current is applied to the two wires 12a1, 12a2 in sandwich 2 by an applied current source. When the power is on, the conducting wire is subjected to ampere force in a magnetic field, so that the connecting strip is correspondingly deformed. Subsequently, releasing the second direction pre-tensile strain of the flexible substrate 11 will cause the sandwich structure 2 to further buckle into a variety of stable configurations. In the present embodiment, since the two connection strips 123 and 124 are included, the sandwich structure 2 can be switched among the following four stable states by regulating the direction of the applied current. Here, the direction of the applied current and the direction of the magnetic field B input to the sandwich structure 12 determine the arching direction of the connection strips 123, 124, i.e. determine whether the top positions of the connection strips 123, 124 are in tensile strain or compressive strain.
The following describes four steady-state configurations of the present application.
First stable state structure
As shown in fig. 5, an upward magnetic field B is applied to the flexible semiconductor structure, connecting the wire on the left side of the sandwich structure 12 to an applied current I. The electrode at the left end of the first end strip 121 is connected to the negative electrode of the power supply, the electrode at the left end of the second end strip 122 is connected to the positive electrode of the power supply, and it can be determined from F ═ I × B that the connecting strip 123 is recessed inward under the action of ampere force. In addition, the right side of the sandwich structure 12 is wired to an external current source. The electrode at the right end of the first end strip 121 is connected to the positive electrode of the power supply, the electrode at the right end of the second end strip 122 is connected to the negative electrode of the power supply, and it can be determined from F ═ I × B that the connecting strip 124 is recessed inward under the action of ampere force. Releasing the second direction pre-tensioning strain of the flexible substrate 11 and bringing the first end strap 121 and the second end strap 122 closer together causes the sandwich structure 12 to flex further into the first stable configuration shown in fig. 5. At this time, the top positions of the connection stripes 123 and 124 are both compressive strain, and the carrier mobility is small.
Second steady state configuration
As shown in fig. 6, an upward magnetic field B is applied to the flexible semiconductor structure, and the wire on the left side of the sandwich structure 12 is connected to an applied current I. The electrode at the left end of the first end strip 121 is connected to the negative electrode of the power supply, the electrode at the left end of the second end strip 122 is connected to the positive electrode of the power supply, and it can be determined from F ═ I × B that the connecting strip 123 is recessed inward under the action of ampere force. In addition, the wires on the right side of the sandwich structure 12 are connected to an external current source. The electrode at the right end of the first end strip 121 is connected to the negative electrode of the power supply, the electrode at the right end of the second end strip 122 is connected to the positive electrode of the power supply, and it can be determined from F ═ I × B that the connecting strip 124 is convex outward by the action of the ampere force. Releasing the second direction pre-tensioning strain of the flexible substrate 11 and bringing the first end strap 121 and the second end strap 122 closer together causes the sandwich structure 12 to flex further into a second stable configuration as shown in fig. 6. At this time, the top position of the connection stripe 123 is compressive strain and the carrier mobility is small, and the top position of the connection stripe 124 is tensile strain and the carrier mobility is large.
Third Steady State configuration
As shown in fig. 7, an upward magnetic field B is applied to the flexible semiconductor structure, and the wire on the left side of the sandwich structure 12 is connected to an applied current I. The electrode at the left end of the first end stripe 121 is connected to the positive electrode of the power supply, and the electrode at the left end of the second end stripe 122 is connected to the negative electrode of the power supply, and it can be determined from F ═ I × B that the connection stripe 123 protrudes outward under the action of an ampere force. In addition, the right side of the sandwich structure 12 is wired to an external current source. The electrode at the right end of the first end strip 121 is connected to the negative electrode of the power supply, the electrode at the right end of the second end strip 122 is connected to the positive electrode of the power supply, and it can be determined from F ═ I × B that the connecting strip 124 is convex outward by the action of the ampere force. Releasing the second direction pre-tensioning strain of the flexible substrate 11 and the first end strap 121 and the second end strap 122 approaching each other causes the sandwich structure 12 to flex further into a third stable configuration as shown in fig. 7. At this time, the top positions of the connection stripes 123 and 124 are tensile strain, and the carrier mobility is large.
Fourth Stable configuration
As shown in fig. 8, an upward magnetic field B is applied to the flexible semiconductor structure, and a current I is applied to the wire on the left side of the sandwich structure 12. The left electrode of the first end strip 121 is connected to the positive electrode of the power supply, the left electrode of the second end strip 122 is connected to the negative electrode of the power supply, and it can be determined from F ═ I × B that the left connecting strip protrudes outward under the action of ampere force. In addition, the right side of the sandwich structure 12 is wired to an external current source. The electrode at the right end of the first end strip 121 is connected to the positive electrode of the power supply, the electrode at the right end of the second end strip 122 is connected to the negative electrode of the power supply, and it can be determined from F ═ I × B that the right connecting strip is concave inward under the action of ampere force. Releasing the second direction pre-tensioning strain of the flexible substrate 11 and the first end strap 121 and the second end strap 122 approaching each other will cause the sandwich structure 12 to flex further into a fourth stable configuration as shown in fig. 8. At this time, the top position of the connection stripe 123 is tensile strain and has a large carrier mobility, and the top position of the connection stripe 124 is compressive strain and has a small carrier mobility.
Hereinafter, a method for forming a flexible semiconductor structure according to the present application will be described with reference to fig. 3.
In step S1, a silicon wafer with a suitable size is taken, a suitable amount of Polyimide (PI) is spin-coated on the silicon wafer to form a polyimide film of 5-15 μm as a first substrate film, the silicon wafer is then pre-cured on a hot stage, and finally the silicon wafer is placed in an oven to be heated and cured in a step heating manner. Here, the thickness of the polyimide film may preferably be 10 μm.
In step S2, the silicon wafer with the cured polyimide is cooled to room temperature, and a metal thin film as a conductive thin film is deposited by electron beam evaporation, wherein the film thickness may be 200 to 400 nm. Here, the metal may be gold. Here, the film thickness may preferably be 300 nm.
In step S3, a photoresist is spin-coated on the deposited metal film, a reticle with a designed pattern is mounted on a lithography machine, and the coated photoresist is exposed and developed to leave a patterned photoresist. Here, the pattern may correspond to a first pattern formed by each conductive line of the conductive layer.
In step S4, the metal not protected by the photoresist is etched using a metal etching solution to form a conductive layer, and then the photoresist is removed using acetone or a double exposure technique.
In step S5, a polyimide film as a second base film, a deposited metal as an adhesive film, and a photoresist are sequentially formed on the polyimide film on which the conductive layer is formed. And mounting the mask with the designed pattern on a photoetching machine, and carrying out secondary exposure and development on the coated photoresist to leave the patterned photoresist. Here, the pattern may correspond to the second pattern formed by the base layer, and the metal may be copper.
In step S6, the metal not protected by the photoresist of step S5 is etched using a metal etching liquid to form a metal pattern in conformity with the reticle pattern of step S5.
In step S7, the photoresist is removed using acetone or a double exposure technique. Next, reactive ion etching was performed to etch the portions of the polyimide film in steps S1 and S5 that were not protected by the metal pattern of step S6.
In step S8, the metal pattern is etched using the metal etching solution to obtain the final "base layer-conductive layer-base layer" sandwich structure 12.
In step S9, an indium tin oxide film is prepared using a magnetron sputtering system. On the basis of the sandwich structure 12, Direct Current (DC) or Radio Frequency (RF) power supply is used for Ar/O 2 Plasma is generated in the mixed gas to bombard the target material, causing the cathode target material to rapidly deposit onto the sandwich structure 12. The thickness of the indium tin oxide film after deposition is controlled to be 200nm to 400nm, for example 300 nm.
Some advantageous effects of the above-described embodiments of the present application will be briefly described below.
(1) According to the flexible semiconductor structure of the application, the semiconductor thin film 2 is formed on the flexible multistable three-dimensional microstructure 1, the energy gap of the semiconductor thin film 2 can be adjusted by changing the deformation of the flexible multistable three-dimensional microstructure 1, and therefore the conducting performance of the semiconductor thin film 2 is adjusted.
(2) According to the flexible semiconductor structure of the present application, the strain formed at the top position of the semiconductor thin film described above can be adjusted by setting the arching height of the first end strap and the second end strap or the arching height of the connection strap by setting the pre-strain of the flexible substrate in the first direction or the second direction. The type of strain at the top position of the connection strip can also be determined by changing the direction of the current applied to the conductive layer. Therefore, the conductivity of the semiconductor material can be flexibly adjusted in various ways.
It is to be understood that, in the present application, when the number of the parts or members is not particularly limited, the number thereof may be one or more, and the plurality herein means two or more. Where the number of parts or elements shown in the drawings and/or described in the specification is a specific number, e.g. two, three, four, etc., this specific number is generally exemplary and not limiting, and it can be understood that it is plural, i.e. two or more, but it is not meant to exclude one from the present application.
It should be understood that the above embodiments are merely exemplary, and are not intended to limit the present application. Various modifications and alterations of the above-described embodiments may be made by those skilled in the art in light of the teachings of this application without departing from the scope thereof.
(i) For example, although the semiconductor thin film is formed on the opposite side of the flexible substrate in the third direction of the sandwich structure in this embodiment mode, it is not limited thereto. The semiconductor thin film may also be formed on the same side of the sandwich structure as the flexible substrate in the third direction.
(ii) For example, although the material of the semiconductor thin film is indium tin oxide in this embodiment mode, other semiconductor materials and two-dimensional materials, such as graphene and perovskite, may be used.
(iii) For example, although the conductive layer includes two conductive lines in this embodiment mode, the number of the conductive lines may be more than two without being limited thereto.
(iv) For example, although the first end connection portion and the second end connection portion are provided at both ends of the first end band and the second end band, respectively, in the present embodiment, the present invention is not limited to this, and the ends of the first end band and the second end band may be directly connected to the flexible substrate 11 without providing the first end connection portion and the second end connection portion.
(v) For example, although in the present embodiment, the first direction and the second direction are perpendicular to each other, it is not limited thereto. The first direction and the second direction may also intersect each other at an acute angle or an obtuse angle.
(vi) For example, although the connection strap is deformed by an ampere force in the present embodiment, it is not limited thereto. The first end strap and the second end strap may also be deformable under an ampere force.
(vii) For example, although in the present embodiment, the flexible multistable three-dimensional structure includes a flexible substrate, it is not limited thereto. The sandwich structure may also be strained directly by the micro device.
Claims (10)
1. A flexible semiconductor structure is characterized by comprising a flexible multistable three-dimensional microstructure (1) and a semiconductor thin film (2), wherein the flexible multistable three-dimensional microstructure comprises a sandwich structure (12), the sandwich structure (12) is a plane structure capable of buckling deformation in a first direction and a second direction which are intersected with each other, and the semiconductor thin film (2) is formed on one side of the sandwich structure (12) in a third direction which is perpendicular to the first direction and the second direction and deforms along with the deformation of the sandwich structure (12) so as to change the energy gap of the semiconductor thin film (2).
2. The flexible semiconductor structure of claim 1,
the sandwich structure (12) comprising a first end strip (121), a second end strip (122) extending along the first direction, and a plurality of connecting strips (123, 124) connected at one end to the first end strip (121) and at the other end to the second end strip (122), the first end strip (121) and the second end strip (122) being arranged spaced apart along the second direction,
at least one of the first end strap (121), the second end strap (122), and the plurality of connecting straps (123, 124) is capable of being electromagnetically energized with an ampere force.
3. The flexible semiconductor structure of claim 2,
the sandwich structure (12) is buckling deformed in the first direction before the ampere force is applied, and the sandwich structure (12) is buckling deformed in the second direction after the ampere force is applied.
4. The flexible semiconductor structure of any one of claims 1 to 3,
the flexible multistable three-dimensional microstructure (1) further comprises a flexible substrate (11) capable of tensile deformation, the flexible substrate (11) is pre-strained in a first direction and pre-strained in a second direction, the flexible substrate (11) which is pre-strained in the first direction and pre-strained in the second direction is connected with the sandwich structure (12) of a planar structure, and the flexible substrate (11) is positioned on the opposite side of the sandwich structure (12) in the third direction from the semiconductor thin film (2).
5. The flexible semiconductor structure of claim 2 or 3,
the sandwich structure (12) comprising two substrate layers overlapping in the third direction and one electrically conductive layer located between the two substrate layers,
the first end strip (121), the second end strip (122) and one or more of the plurality of connection strips (123, 124) have the conductive layer disposed therein so as to be capable of being applied with an electric current.
6. The flexible semiconductor structure of claim 5,
the base layer is made of polyimide, the thickness of the single-layer base layer is 5-15 microns,
the conducting layer is made of gold and has a thickness of 200-400 nm,
the semiconductor film is made of indium tin oxide and has a thickness of 200-400 nm.
7. A flexible semiconductor construction system, comprising:
the flexible semiconductor structure of claim 4;
a strain applying portion for stretching the flexible substrate (11) and releasing the stretching of the flexible substrate (11);
a current application portion for applying a current to the sandwich structure (12); and
a magnetic field applying portion for applying a magnetic field to the sandwich structure (12).
8. A method for forming a flexible semiconductor structure is characterized by comprising the steps of forming a semiconductor film (2) on a flexible multistable three-dimensional microstructure (1),
the flexible multistable three-dimensional microstructure comprises a sandwich structure (12), wherein the sandwich structure (12) is a plane structure capable of buckling deformation in a first direction and a second direction which are intersected with each other, the semiconductor thin film (2) is formed on one side of the sandwich structure (12) in a third direction which is perpendicular to the first direction and the second direction, and deforms along with the deformation of the sandwich structure (12) so as to change the energy gap of the semiconductor thin film (2).
9. The method of forming a flexible semiconductor structure according to claim 8,
the flexible multistable three-dimensional microstructure (1) comprising a flexible substrate (11) pre-strained first in the first direction and pre-strained second in the second direction,
the forming method comprises the following steps: -connecting the sandwich structure (12) to the flexible substrate (11) to which the first and second pre-strains are applied.
10. The method of forming a flexible semiconductor structure according to claim 9, comprising:
releasing the first pre-strain applied to the flexible substrate (11) such that both sides of the sandwich structure (12) in the second direction bulge in the third direction;
applying a magnetic field to the sandwich structure (12);
applying an electric current to the sandwich structure (12) such that a portion of the sandwich structure (12) is electromagnetically subjected to an ampere force; and
releasing the second pre-strain applied to the flexible substrate (11) such that both sides of the sandwich structure (12) in the second direction are brought closer to each other in the second direction,
the sandwich structure (12) comprising a first end strip (121), a second end strip (122) extending along the first direction, and a plurality of connecting strips (123, 124) connected at one end to the first end strip (121) and at the other end to the second end strip (122), the first end strip (121) and the second end strip (122) being arranged spaced apart along the second direction,
wherein the energy gap of the semiconductor thin film (2) formed on the first end strip (121) and the second end strip (122) is adjusted by changing the magnitude of the first pre-strain,
adjusting an energy gap of the semiconductor thin film (2) formed on the connection strip (123, 124) by changing the second pre-strain and/or adjusting an energy gap of the semiconductor thin film (2) formed on the connection strip (123, 124) by adjusting a direction of the current.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210750557.1A CN115101581B (en) | 2022-06-28 | 2022-06-28 | Flexible semiconductor structure, system and forming method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210750557.1A CN115101581B (en) | 2022-06-28 | 2022-06-28 | Flexible semiconductor structure, system and forming method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN115101581A true CN115101581A (en) | 2022-09-23 |
| CN115101581B CN115101581B (en) | 2023-06-16 |
Family
ID=83294411
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210750557.1A Active CN115101581B (en) | 2022-06-28 | 2022-06-28 | Flexible semiconductor structure, system and forming method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115101581B (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040192082A1 (en) * | 2003-03-28 | 2004-09-30 | Sigurd Wagner | Stretchable and elastic interconnects |
| US20170200679A1 (en) * | 2004-06-04 | 2017-07-13 | The Board Of Trustees Of The University Of Illinois | Stretchable Form of Single Crystal Silicon for High Performance Electronics on Rubber Substrates |
| CN107240600A (en) * | 2017-06-26 | 2017-10-10 | 京东方科技集团股份有限公司 | A kind of flexible display apparatus |
-
2022
- 2022-06-28 CN CN202210750557.1A patent/CN115101581B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040192082A1 (en) * | 2003-03-28 | 2004-09-30 | Sigurd Wagner | Stretchable and elastic interconnects |
| US20170200679A1 (en) * | 2004-06-04 | 2017-07-13 | The Board Of Trustees Of The University Of Illinois | Stretchable Form of Single Crystal Silicon for High Performance Electronics on Rubber Substrates |
| CN107240600A (en) * | 2017-06-26 | 2017-10-10 | 京东方科技集团股份有限公司 | A kind of flexible display apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| CN115101581B (en) | 2023-06-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20200206765A1 (en) | Mask and method of manufacturing mask assembly including the same | |
| US7451596B2 (en) | Multiple degree of freedom micro electro-mechanical system positioner and actuator | |
| US20080042543A1 (en) | Multiple shadow mask structure for deposition shadow mask protection and method of making and using same | |
| EP3594377B1 (en) | Mask assembly, deposition apparatus having the same, and method of fabricating display device using the same | |
| WO2007120322A2 (en) | Ground shields for semiconductors | |
| EP0410106B1 (en) | System for magnification correction of conductive x-ray lithography mask substrates | |
| KR101521205B1 (en) | Selective continuous transferring apparatus using contact control | |
| KR102123419B1 (en) | Sheet for controlling gap between device and method of controlling gap between device using the same | |
| KR20190115609A (en) | Fabrication of rigid islands on stretchable layer with low Young's modulus and applications to stretchable electronics platform thereof | |
| CN115101581B (en) | Flexible semiconductor structure, system and forming method thereof | |
| JP5549495B2 (en) | Optical element, method for producing the same, and method for using the same | |
| US8034208B2 (en) | Deformation moderation method | |
| KR101509282B1 (en) | A system for patterning flexible foils | |
| EP2066147B1 (en) | Micro-heaters, micro-heater arrays, methods for manufacturing the same and electronic devices using the same | |
| CN114955975B (en) | Flexible multistable three-dimensional microstructure and system and method of forming the same | |
| CN114496350B (en) | Electrode, electronic device and device | |
| US11358868B2 (en) | Device comprising physical properties controlled by microstructure and method of manufacturing the same | |
| JP3842727B2 (en) | Stencil mask and manufacturing method thereof | |
| US11879170B2 (en) | Stress patterning systems and methods for manufacturing free-form deformations in thin substrates | |
| JP7413713B2 (en) | Vapor deposition mask manufacturing method and vapor deposition mask | |
| JPH06284750A (en) | Laminated electrostatic actuator | |
| US11098955B2 (en) | Micro-scale wireless heater and fabrication method and applications thereof | |
| JP4341296B2 (en) | Method for producing photonic crystal three-dimensional structure | |
| Bonderover et al. | Amorphous silicon thin film transistors on kapton fibers | |
| TW201933591A (en) | Imaging element mounting substrate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |