CN114955975B - Flexible multistable three-dimensional microstructure and system and method of forming the same - Google Patents

Flexible multistable three-dimensional microstructure and system and method of forming the same Download PDF

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Publication number
CN114955975B
CN114955975B CN202210441385.XA CN202210441385A CN114955975B CN 114955975 B CN114955975 B CN 114955975B CN 202210441385 A CN202210441385 A CN 202210441385A CN 114955975 B CN114955975 B CN 114955975B
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end strip
sandwich structure
strip
flexible
dimensional microstructure
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CN114955975A (en
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冯雪
简巍
焦阳
王鹏
王锦阳
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Tsinghua University
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Tsinghua University
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0035Constitution or structural means for controlling the movement of the flexible or deformable elements
    • B81B3/0059Constitution or structural means for controlling the movement not provided for in groups B81B3/0037 - B81B3/0056
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0062Devices moving in two or more dimensions, i.e. having special features which allow movement in more than one dimension
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00134Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00523Etching material
    • B81C1/00539Wet etching

Abstract

A flexible multistable three-dimensional microstructure and system and method of forming the same are provided. The flexible multistable three-dimensional microstructure comprises a sandwich structure, which is a planar structure capable of buckling deformation in a first direction and a second direction intersecting each other, the sandwich structure comprising a first end strip, a second end strip and a plurality of intermediate strips, the first end strip and the second end strip each extending along the first direction and the first end strip and the second end strip being arranged at a distance along the second direction, one end of each intermediate strip being connected to the first end strip and the other end being connected to the second end strip, the first end strip, the second end strip and one or more of the plurality of intermediate strips being capable of buckling deformation under the influence of an electromagnetic force, the sandwich structure buckling deformation in the first direction being performed before the buckling deformation occurs, and the sandwich structure buckling deformation in the second direction being performed after the buckling deformation occurs.

Description

Flexible multistable three-dimensional microstructure and system and method of forming the same
Technical Field
The application relates to the technical field of engineering material preparation, and in particular relates to a flexible multistable three-dimensional microstructure, a system and a forming method thereof.
Background
Three-dimensional structures that change shape and size upon external excitation are widely used in many fields. For example, in the medical field, pressure sensors capable of adapting to the size of the gastrointestinal tract can reduce mechanical damage to the human body by endoscopes, and vascular stents capable of expanding and expanding can eliminate thrombi during implantation surgery. In the field of communications, miniature antennas can be deployed in space in time to collect energy and transmit signals.
At this stage, the deformation of the three-dimensional structure is driven remotely, mainly by means of mechanical actuation. However, when a three-dimensional structure is driven by a remote mechanical actuation method, the switchable shape is limited and cannot be applied to a scene requiring a plurality of changes in shape. And, as the size of the structure is reduced to millimeter and sub-millimeter dimensions, the driving force is rapidly reduced compared to the rigidity possessed by the whole structure, resulting in difficulty in realizing large driving deformation in a small dimension. Therefore, there is a need for a three-dimensional structure that can be remotely switched to various shapes and that can drive a small-scale structure of greater rigidity.
Disclosure of Invention
The present application has been made in view of the state of the art described above. The application aims to provide a flexible multistable three-dimensional microstructure capable of switching a three-dimensional structure into various stable structures, and a system and a forming method thereof.
A first aspect of the present application provides a flexible multistable three-dimensional microstructure comprising a sandwich structure being a planar structure capable of buckling deformation in a first direction and a second direction intersecting each other,
the sandwich structure comprising a first end strip, a second end strip, and a plurality of intermediate strips, each of the first and second end strips extending along the first direction and the first and second end strips being arranged spaced apart along the second direction, each of the intermediate strips being connected at one end to the first end strip and at the other end to the second end strip,
one or more of the first end strip, the second end strip and the plurality of intermediate strips are capable of undergoing induced deformation under the influence of electromagnetic forces,
before the induced deformation occurs, the sandwich structure flexes in the first direction, and after the induced deformation occurs, the sandwich structure flexes in the second direction.
In at least one embodiment, the flexible multistable three-dimensional microstructure further comprises a flexible substrate, the flexible substrate being capable of tensile deformation in the first direction and the second direction, and the flexible substrate being connected to the sandwich structure of planar structure in a state of being stretched along the first direction and the second direction.
In at least one embodiment, the sandwich structure comprises two substrate layers overlapping in a third direction, and one conductive layer between the two substrate layers, the third direction being perpendicular to the first and second directions,
the conductive layer is disposed in one or more of the first end strip, the second end strip, and the plurality of intermediate strips so as to be capable of being applied with an electric current.
In at least one embodiment, end connections are provided at both ends of the first end strip and/or at both ends of the second end strip, respectively, by means of which end connections the sandwich structure is connected to the flexible substrate.
In at least one embodiment, the conductive layer extends to the end connection so that current can be applied to the conductive layer via the end connection.
In at least one embodiment, the base layer has a thickness of 5 to 15 microns and the conductive layer has a thickness of 200 to 400 nanometers.
A second aspect of the present application provides a flexible multistable three-dimensional microstructure system comprising:
a flexible multistable three-dimensional microstructure according to any of the preceding claims;
a strain applying section for stretching the flexible substrate and releasing the stretching of the flexible substrate; a current application section for applying a current to the sandwich structure; and
and a magnetic field applying section for applying a magnetic field to the sandwich structure.
A third aspect of the present application provides a method of forming a flexible multistable three-dimensional microstructure comprising forming a sandwich structure into a planar structure capable of buckling deformation in first and second directions intersecting each other,
the sandwich structure comprises a first end strip, a second end strip and a plurality of intermediate strips, wherein the first end strip and the second end strip extend along the first direction, the first end strip and the second end strip are arranged at intervals along the second direction, one end of each intermediate strip is connected to the first end strip, the other end is connected to the second end strip, one or more strips of the first end strip, the second end strip and the plurality of intermediate strips can be induced to deform under the action of electromagnetism, and
before the induced deformation occurs, the sandwich structure is deformed to flex in the first direction, and after the induced deformation occurs, the sandwich structure is deformed to flex in the second direction.
In at least one embodiment, comprising attaching the sandwich structure of planar structure to a flexible substrate in a state stretched along the first direction and the second direction.
In at least one embodiment, the method comprises:
releasing the stretching of the flexible substrate in the first direction, causing the first and second end strips of the sandwich structure to bulge in a third direction;
applying a magnetic field to the flexible multistable three-dimensional microstructure;
applying an electrical current to the sandwich structure to induce deformation of the first end strip, the second end strip, and one or more of the plurality of intermediate strips under the influence of electromagnetic force; and
releasing the stretching of the flexible substrate in the second direction, bringing the first and second end strips of the sandwich structure closer to each other in the second direction.
In at least one embodiment, the step of preparing the sandwich structure comprises:
forming a first base film on the surface of a carrier;
forming a conductive film on the surface of the first base film;
forming a photoresist on the surface of the conductive film and etching the photoresist into a first pattern;
removing the part of the conductive film which is not covered by the photoresist, thereby forming a conductive layer;
sequentially forming a second substrate film, a paste film and photoresist on the surfaces of the first substrate film and the conductive layer, and etching the photoresist into a second pattern;
removing the part of the adhesive film which is not covered by the photoresist;
removing portions of the first and second base films not covered by the adhesive film; and
and removing the adhesive film.
By adopting the technical scheme, the three-dimensional structure shape can be regulated and controlled under the synergistic effect of machinery and electromagnetism, so that the three-dimensional structure shape regulating device can be applied to various scenes in which the structure shape and the size need to be changed.
Drawings
Fig. 1 shows a schematic view of a sandwich structure according to an embodiment of the present application when it is connected to a flexible substrate.
Fig. 2 shows a cross-sectional view of a sandwich structure according to an embodiment of the present application.
Fig. 3 shows a schematic diagram of steps for preparing a sandwich structure according to an embodiment of the present application.
Fig. 4 shows a schematic perspective view of a sandwich structure when pretensioning in a first direction of a flexible substrate is released only according to one embodiment of the present application.
Fig. 5 shows a schematic perspective view of a sandwich structure switched to a first steady state structure according to an embodiment of the present application.
Fig. 6 shows a schematic perspective view of a sandwich structure switched to a second steady state structure according to an embodiment of the present application.
Fig. 7 shows a schematic perspective view of a sandwich structure switched to a third steady state structure according to an embodiment of the present application.
Fig. 8 shows a schematic perspective view of a sandwich structure switched to a fourth steady state structure according to an embodiment of the present application.
Detailed Description
Exemplary embodiments of the present application are described below with reference to the accompanying drawings. It should be understood that these specific descriptions are merely illustrative of how one skilled in the art may practice the present application and are not intended to be exhaustive of all of the possible ways of practicing the present application nor to limit the scope of the present application.
The technical idea of the present application is schematically described below. The application provides a flexible multistable three-dimensional microstructure, a flexible multistable three-dimensional microstructure system and a forming method of the flexible multistable three-dimensional microstructure. The flexible multistable three-dimensional microstructure system comprises a flexible multistable three-dimensional microstructure, a current application part, a magnetic field application part and a strain application part. The flexible multistable three-dimensional microstructure comprises a flexible substrate 1 and a sandwich structure 2. According to the present application, the sandwich structure 2 in a planar state is first subjected to unidirectional compression to buckling by releasing the pretensioning strain of the flexible substrate 1, forming a raised three-dimensional structure. Further, a magnetic field is applied to the three-dimensional structure through the magnetic field application part, and a current is applied to the conductive layer in the three-dimensional structure through the current application part, so that the conductive layer is correspondingly deformed under the action of ampere force. Under the induction of the deformation, the three-dimensional structure is deformed into a desired shape by buckling in an unstable manner as a whole after releasing the pretensioning strain in the other direction of the flexible substrate 1.
The first direction in this application refers to the x-direction shown in fig. 1, the second direction refers to the y-direction shown in fig. 1, and the third direction refers to the z-direction shown in fig. 1, unless otherwise specified.
As shown in fig. 1, the flexible multistable three-dimensional microstructure of the present application comprises a flexible substrate 1 and a sandwich structure 2. Wherein the flexible substrate 1 is a planar structure capable of stretching in a first direction and a second direction, and has a tensile strain ε in the first direction x Has a tensile strain epsilon in a second direction y . The sandwich structure 2 is also a planar structure and is connected to the flexible substrate 1 in a state in which the flexible substrate 1 is stretched in the first direction and the second direction.
Specifically, in the present embodiment, the material of the flexible substrate 1 may be PDMS (polydimethylsiloxane). The flexible substrate 1 having great elasticity can be prepared by adopting a static pouring mode. First, the mass of liquid PDMS corresponding to the thickness of the desired flexible substrate 1 is calculated using the formula m=ρsh, where m is mass, ρ is density, S is cross-sectional area of the curing vessel, and H is thickness. In this embodiment, the thickness may be 3mm. Then, the bulk of the liquid PDMS and the curing agent are mixed uniformly in a ratio of, for example, 10:1, the calculated mass of PDMS mixed liquid is weighed, and the PDMS mixed liquid is placed in a curing container and cured for two days at room temperature, so that PDMS with a thickness of 3mm is formed. The cured PDMS, i.e., the flexible substrate 1, was placed on a biaxial stretching stage as an example of a strain applying section, kept about 20% biaxial pre-strain, and in a stretched state.
Here, the flexible substrate 1 is stretched in the first direction and the second direction on a biaxial stretching stage, with pre-strain in both directions.
Furthermore, as shown in fig. 1, the sandwich structure 2 comprises a first end strip 21, a second end strip 22 and two intermediate strips 23, 24. The first end strip 21 and the second end strip 22 each extend along a first direction, and the first end strip 21 and the second end strip 22 are arranged at intervals along a second direction. The intermediate straps 23, 24 are connected at one end to the first end strap 21 and at the other end to the second end strap 22. Here, the intermediate strip may be a straight strip or a curved strip.
Further, first end connection portions 21a, 21b as end connection portions may be provided at both ends of the first end strip 21, and second end connection portions 22a, 22b as end connection portions may be provided at both ends of the second end strip 22 to be connected to the flexible substrate 1.
Further, the sandwich structure 2 includes two base layers and one conductive layer laminated in the third direction. Wherein the conductive layer is located between the two substrate layers. In this embodiment, the material of the base layer may be polyimide, and the material of the conductive layer may be metal, as shown in step S8 of fig. 3. Here, the conductive layer may extend to the first end connection portions 21a, 21b and the second end connection portions 22a, 22b, so that a current can be applied to the conductive layer via the first end connection portions 21a, 21b and the second end connection portions 22a, 22 b.
Specifically, as shown in the hatched area of fig. 2, the conductive layer comprises a plurality of individual wires 3, 4. The wire 3 extends from one end of the first end strip 21 to one end of the second end strip 22 via the intermediate strip 23. The wire 4 extends from the other end of the first end strip 21 to the other end of the second end strip 22 via the intermediate strip 24.
A method of forming the sandwich structure 2 of the present application will be described below with reference to fig. 3.
In the step S1, a silicon wafer with proper size is taken, a proper amount of Polyimide (PI) is spin-coated on the silicon wafer to form a polyimide film with the thickness of 5-15 mu m as a first substrate film, then the silicon wafer is placed on a heat table for pre-curing, and finally the silicon wafer is placed in an oven for heating and curing in a step heating mode. Here, the thickness of the polyimide film may preferably be 10 μm.
In step S2, the silicon wafer of the cured polyimide is cooled to room temperature, and a metal thin film as a conductive thin film is deposited by electron beam evaporation, and the film thickness may be 200 to 400nm. Here, the metal material may be gold. Here, the film thickness may preferably be 300nm.
In step S3, photoresist is spin-coated on the deposited metal film, a reticle with a designed pattern is mounted on a photolithography machine, and the coated photoresist is exposed and developed, leaving the patterned photoresist. Here, the pattern is a first pattern formed by the respective wires of the conductive layer.
In step S4, the metal not protected by the photoresist is etched using a metal etching solution to form a conductive layer, and then the photoresist is removed using acetone or a secondary exposure technique.
In step S5, a polyimide film as a second base film, a deposited metal as a paste film, and a photoresist are sequentially formed on the polyimide film on which the conductive layer is formed. The mask plate with the designed pattern is installed on a photoetching machine, and the coated photoresist is subjected to secondary exposure and development, so that the patterned photoresist is left. Here, the pattern is a second pattern formed by the base layer, and the metal is copper.
In step S6, the metal not protected by the photoresist of step S5 is etched using a metal etching solution to form a metal pattern conforming to the mask pattern of step S5.
In step S7, the photoresist is removed using acetone or a double exposure technique. Next, reactive ion etching is performed to etch the portions of the polyimide film in step S1 and step S5 that are not protected by the metal pattern of step S6.
In step S8, the metal pattern is etched using a metal etching liquid, resulting in the final "base layer-conductive layer-base layer" sandwich structure 2.
The following describes the use of the flexible multistable three-dimensional microstructure of the present application.
The flexible substrate 1 was held on a biaxial stretching stage to perform biaxial stretching, so that the pre-strain of the flexible substrate 1 in both the first direction and the second direction was maintained at 20%. The sandwich structure 2 is then transferred from the silicon wafer to the biaxially pre-stretched flexible substrate 1 and the sandwich structure 2 is bonded to the flexible substrate 1 with an adhesive at the first end connections 21a, 21b and the second end connections 22a, 22b, as shown in fig. 1.
Next, the pretensioning strain of the flexible substrate 1 in the first direction is released, and the pretensioning strain in the second direction is kept unchanged. At this time, the sandwich structure 2 is deformed from a planar structure to a three-dimensional structure of a bulge due to buckling caused by compressive strain in the first direction, as shown in fig. 4.
Then, a permanent magnet as a magnetic field applying portion is disposed so that the magnetic field direction thereof is along the third direction. The above-mentioned raised three-dimensional structure is placed in a magnetic field B and an electric current is applied to the two wires 3, 4 in the sandwich structure 2 by means of two externally applied current sources, respectively. The conductive wire when energized is subjected to an ampere force in the magnetic field, so that the middle strip is correspondingly deformed. The pre-stretching strain in the second direction of the flexible substrate 1 is then released, which will cause the sandwich structure 2 to further flex into a variety of steady-state structures. In this embodiment, since two intermediate strips are included, the sandwich structure 2 can be switched in the following four steady-state structures by adjusting the magnitude and direction of the applied current.
First steady state Structure
As shown in fig. 5, an upward magnetic field B is applied to the sandwich structure 2, and a current I is applied to the left-hand wire of the sandwich structure 2. The electrode at the left end of the first end strip 21 is connected to the negative electrode of the power supply, the electrode at the left end of the second end strip 22 is connected to the positive electrode of the power supply, and it can be determined that the middle strip 23 is concave inwards under the action of ampere force by f=i×b. In addition, the right-hand wire of the sandwich structure 2 is connected to an external current source. The electrode at the right end of the first end strip 21 is connected to the positive electrode of the power supply, the electrode at the right end of the second end strip 22 is connected to the negative electrode of the power supply, and it can be determined that the middle strip 24 is concave inwards under the action of ampere force by f=i×b. Releasing the pretensioned strain in the second direction of the flexible substrate 1, the first end strip 21 and said second end strip 22 being close to each other, will cause the sandwich structure 2 to buckle further into the first stable configuration as shown in fig. 5.
Second steady state structure
As shown in fig. 6, an upward magnetic field B is applied to the sandwich structure 2, and a current I is applied to the left-hand wire of the sandwich structure 2. The electrode at the left end of the first end strip 21 is connected to the negative electrode of the power supply, the electrode at the left end of the second end strip 22 is connected to the positive electrode of the power supply, and it can be determined that the middle strip 23 is concave inwards under the action of ampere force by f=i×b. In addition, the right-hand wire of the sandwich structure 2 is connected to an external current source. The electrode at the right end of the first end strip 21 is connected to the negative electrode of the power supply, the electrode at the right end of the second end strip 22 is connected to the positive electrode of the power supply, and it can be determined that the middle strip 24 protrudes to the outside under the action of ampere force by f=i×b. Releasing the pretensioned strain in the second direction of the flexible substrate 1, the first end strip 21 and said second end strip 22 being close to each other, will cause the sandwich structure 2 to buckle further into the second stable configuration as shown in fig. 6.
Third steady state Structure
As shown in fig. 7, an upward magnetic field B is applied to the sandwich structure 2, and a current I is applied to the left-hand wire of the sandwich structure 2. The electrode at the left end of the first end strip 21 is connected to the positive electrode of the power supply, the electrode at the left end of the second end strip 22 is connected to the negative electrode of the power supply, and it can be determined that the middle strip 23 protrudes to the outside under the action of ampere force by f=i×b. In addition, the right-hand wire of the sandwich structure 2 is connected to an external current source. The electrode at the right end of the first end strip 21 is connected to the negative electrode of the power supply, the electrode at the right end of the second end strip 22 is connected to the positive electrode of the power supply, and it can be determined that the middle strip 24 protrudes to the outside under the action of ampere force by f=i×b. Releasing the pretensioned strain in the second direction of the flexible substrate 1, the first end strip 21 and said second end strip 22 being close to each other, will cause the sandwich structure 2 to buckle further into a third steady-state configuration as shown in fig. 7.
Fourth steady state structure
As shown in fig. 8, an upward magnetic field B is applied to the sandwich structure 2, and a current I is applied to the left-hand wire of the sandwich structure 2. The electrode at the left end of the first end strip 21 is connected to the positive electrode of the power supply, the electrode at the left end of the second end strip 22 is connected to the negative electrode of the power supply, and it can be determined that the middle strip at the left side protrudes to the outside under the action of ampere force by f=i×b. In addition, the right-hand wire of the sandwich structure 2 is connected to an external current source. The electrode at the right end of the first end strip 21 is connected to the positive electrode of the power supply, the electrode at the right end of the second end strip 22 is connected to the negative electrode of the power supply, and f=i×b can determine that the middle strip on the right side is concave inwards under the action of ampere force. Releasing the pretensioned strain in the second direction of the flexible substrate 1, the first end strip 21 and said second end strip 22 being close to each other, will cause the sandwich structure 2 to buckle further into a fourth steady-state structure as shown in fig. 8.
Some of the advantageous effects of the above-described embodiments of the present application are briefly described below.
(1) The invention realizes the regulation and control of the three-dimensional structure shape through the cooperation of the machinery and the electromagnetism, so as to be applied to the scene needing to change the structure shape and the size. For example, when applied to a micro antenna that needs to be deployed into various postures to collect signals in the communication field, the shape of the three-dimensional structure can be adjusted by controlling the direction, the size, etc. of the external current source to meet the communication demand.
(2) The stable structure after buckling and unstability of the three-dimensional structure can be switched by remotely regulating the magnitude and the direction of current in the metal wire. For example, when applied to a sensor of an adaptive gastrointestinal size, the current input/output of the sensor can be controlled by a remote operation device, so that the shape of the three-dimensional structure is controlled, and the gastrointestinal tract is prevented from being scratched.
(3) By releasing the pretensioning strain in one direction, then generating structural deformation with the function of inducing the deformation direction through electromagnetic action, and finally releasing the pretensioning strain in the other direction, the required shape can be obtained more accurately, and larger driving deformation can be realized for the structure with small scale and larger rigidity.
It is to be understood that in the present application, when the number of parts or members is not particularly limited, the number may be one or more, and the number herein refers to two or more. For the case where the number of parts or members is shown in the drawings and/or described in the specification as a specific number such as two, three, four, etc., the specific number is generally illustrative and not restrictive, it may be understood that a plurality, i.e., two or more, but this does not mean that the present application excludes one.
It should be understood that the above embodiments are merely exemplary and are not intended to limit the present application. Those skilled in the art can make various modifications and changes to the above-described embodiments without departing from the scope of the present application.
(i) For example, although the conductive layer includes two wires in the present embodiment, the number of wires may be more than two without being limited thereto.
(ii) For example, in the present embodiment, the first end portion connecting portion and the second end portion connecting portion are provided at both ends of the first end portion strip and the second end portion strip, respectively, but the present invention is not limited thereto, and the first end portion connecting portion and the second end portion connecting portion may be not provided, and may be directly connected to the flexible substrate 1 through the end portions of the first end portion strip and the second end portion strip.
(iii) For example, although in the present embodiment, the first direction and the second direction are perpendicular to each other, this is not a limitation. The first direction and the second direction may also intersect each other at an acute or obtuse angle.
(iv) For example, although the intermediate strip is deformed by the action of ampere force in the present embodiment, it is not limited thereto. The first and second end straps may also deform under the force of an ampere force.
(v) For example, although in the present embodiment, the flexible multistable three-dimensional structure includes a flexible substrate, it is not limited thereto. The strain may also be applied directly to the sandwich structure by micro devices.

Claims (8)

1. A flexible multistable three-dimensional microstructure comprising a sandwich structure (2), the sandwich structure (2) being a planar structure capable of buckling deformation in a first direction and a second direction intersecting each other,
the sandwich structure (2) comprises a first end strip (21), a second end strip (22) and a plurality of intermediate strips (23, 24), the first end strip (21) and the second end strip (22) each extending along the first direction and the first end strip (21) and the second end strip (22) being arranged spaced apart along the second direction, one end of each intermediate strip being connected to the first end strip (21) and the other end being connected to the second end strip (22),
-said first end strip (21), said second end strip (22) and one or more of said plurality of intermediate strips (23, 24) being capable of undergoing induced deformation under the effect of an electromagnetic field,
before the induced deformation occurs, the sandwich structure (2) is deformed in buckling in the first direction, after the induced deformation occurs, the sandwich structure (2) is deformed in buckling in the second direction,
the sandwich structure (2) comprises two substrate layers and a conductive layer, the two substrate layers overlap in a third direction, the conductive layer is located between the two substrate layers, the third direction is perpendicular to the first direction and the second direction,
the first end strip (21), the second end strip (22) and one or more of the plurality of intermediate strips (23, 24) are provided with the conductive layer so as to be able to be supplied with an electric current.
2. A flexible multistable three-dimensional microstructure according to claim 1 wherein,
the flexible multistable three-dimensional microstructure further comprises a flexible substrate (1), the flexible substrate (1) being capable of tensile deformation in the first direction and the second direction, and the flexible substrate (1) being connected with the sandwich structure (2) of planar structure in a state of being stretched along the first direction and the second direction.
3. A flexible multistable three-dimensional microstructure according to claim 2 wherein,
end connections are provided at both ends of the first end strip (21) and/or at both ends of the second end strip (22), respectively, by means of which end connections the sandwich structure (2) is connected to the flexible substrate (1).
4. A flexible multistable three-dimensional microstructure according to claim 3 wherein,
the conductive layer extends to the end connection so that a current can be applied to the conductive layer via the end connection.
5. A flexible multistable three-dimensional microstructure according to claim 3 or 4 wherein,
the thickness of the substrate layer is 5-15 micrometers, and the thickness of the conductive layer is 200-400 nanometers.
6. A flexible multistable three-dimensional microstructure system comprising:
a flexible multistable three-dimensional microstructure according to any of claims 2 to 5;
a strain applying section for stretching the flexible substrate (1) and releasing the stretching of the flexible substrate (1);
a current application section for applying a current to the sandwich structure (2); and
and a magnetic field applying section for applying a magnetic field to the sandwich structure (2).
7. A method of forming a flexible multistable three-dimensional microstructure, characterized in that it comprises forming a sandwich structure (2) into a planar structure capable of buckling deformation in a first direction and a second direction intersecting each other,
the sandwich structure (2) comprises a first end strip (21), a second end strip (22) and a plurality of intermediate strips (23, 24), the first end strip (21) and the second end strip (22) each extending along the first direction and the first end strip (21) and the second end strip (22) being arranged at intervals along the second direction, one end of each intermediate strip being connected to the first end strip (21) and the other end to the second end strip (22) such that one or more of the first end strip (21), the second end strip (22) and the plurality of intermediate strips (23, 24) are capable of being induced to deform under the influence of an electromagnetic force, and
buckling deformation of the sandwich structure (2) in the first direction before the induced deformation occurs, buckling deformation of the sandwich structure (2) in the second direction after the induced deformation occurs,
the method for forming the flexible multistable three-dimensional microstructure further comprises the following steps:
-connecting the sandwich structure (2) of planar structure to a flexible substrate (1) in a state stretched along the first direction and the second direction;
releasing the stretching of the flexible substrate (1) in the first direction, causing the first (21) and second (22) end strips of the sandwich structure (2) to bulge in a third direction;
applying a magnetic field to the flexible multistable three-dimensional microstructure;
-applying an electric current to the sandwich structure (2) causing an induced deformation of one or more of the first end strip (21), the second end strip (22) and the plurality of intermediate strips (23, 24) under the influence of an electromagnetic force; and
-releasing the stretching of the flexible substrate (1) in the second direction, bringing the first end strip (21) and the second end strip (22) of the sandwich structure (2) close to each other in the second direction.
8. The method of forming a flexible multistable three-dimensional microstructure according to claim 7 wherein,
the preparation steps of the sandwich structure (2) comprise:
forming a first base film on the surface of a carrier;
forming a conductive film on the surface of the first base film;
forming a photoresist on the surface of the conductive film and etching the photoresist into a first pattern;
removing the part of the conductive film which is not covered by the photoresist, thereby forming a conductive layer;
sequentially forming a second substrate film, a paste film and photoresist on the surfaces of the first substrate film and the conductive layer, and etching the photoresist into a second pattern;
removing the part of the adhesive film which is not covered by the photoresist;
removing portions of the first and second base films not covered by the adhesive film; and
and removing the adhesive film.
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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107240600A (en) * 2017-06-26 2017-10-10 京东方科技集团股份有限公司 A kind of flexible display apparatus
CN109166847A (en) * 2018-08-27 2019-01-08 清华大学 Flexible electronic device and its manufacturing method
CN111952322A (en) * 2020-08-14 2020-11-17 电子科技大学 Flexible semiconductor film with periodically adjustable buckling structure and preparation method thereof

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7491892B2 (en) * 2003-03-28 2009-02-17 Princeton University Stretchable and elastic interconnects
US7521292B2 (en) * 2004-06-04 2009-04-21 The Board Of Trustees Of The University Of Illinois Stretchable form of single crystal silicon for high performance electronics on rubber substrates

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107240600A (en) * 2017-06-26 2017-10-10 京东方科技集团股份有限公司 A kind of flexible display apparatus
CN109166847A (en) * 2018-08-27 2019-01-08 清华大学 Flexible electronic device and its manufacturing method
CN111952322A (en) * 2020-08-14 2020-11-17 电子科技大学 Flexible semiconductor film with periodically adjustable buckling structure and preparation method thereof

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