CN115096946A - Method for testing aluminum oxide HTCC metallization sheet resistance and via hole resistance - Google Patents
Method for testing aluminum oxide HTCC metallization sheet resistance and via hole resistance Download PDFInfo
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- 238000001465 metallisation Methods 0.000 title claims abstract description 67
- 238000012360 testing method Methods 0.000 title claims abstract description 53
- 238000000034 method Methods 0.000 title claims abstract description 47
- SWPMTVXRLXPNDP-UHFFFAOYSA-N 4-hydroxy-2,6,6-trimethylcyclohexene-1-carbaldehyde Chemical compound CC1=C(C=O)C(C)(C)CC(O)C1 SWPMTVXRLXPNDP-UHFFFAOYSA-N 0.000 title claims abstract description 40
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 title claims abstract description 31
- 230000008569 process Effects 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 238000007639 printing Methods 0.000 claims abstract description 11
- 238000005259 measurement Methods 0.000 claims abstract description 8
- 238000004519 manufacturing process Methods 0.000 claims abstract description 6
- 238000012545 processing Methods 0.000 claims abstract description 5
- 239000000919 ceramic Substances 0.000 claims description 11
- 229910052573 porcelain Inorganic materials 0.000 claims description 11
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 9
- 239000010410 layer Substances 0.000 claims description 8
- 230000007547 defect Effects 0.000 claims description 4
- 238000004080 punching Methods 0.000 claims description 3
- 239000002356 single layer Substances 0.000 claims description 3
- 238000007689 inspection Methods 0.000 claims description 2
- 238000003860 storage Methods 0.000 claims 1
- 238000010998 test method Methods 0.000 claims 1
- 238000013461 design Methods 0.000 abstract description 8
- 238000004100 electronic packaging Methods 0.000 abstract description 2
- 239000000523 sample Substances 0.000 description 19
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 5
- 229910052721 tungsten Inorganic materials 0.000 description 5
- 239000010937 tungsten Substances 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 239000002002 slurry Substances 0.000 description 4
- PCEXQRKSUSSDFT-UHFFFAOYSA-N [Mn].[Mo] Chemical compound [Mn].[Mo] PCEXQRKSUSSDFT-UHFFFAOYSA-N 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 238000003475 lamination Methods 0.000 description 3
- 238000000691 measurement method Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 238000010344 co-firing Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000007619 statistical method Methods 0.000 description 1
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- 238000003466 welding Methods 0.000 description 1
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- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
- G01N2001/2893—Preparing calibration standards
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Abstract
The invention belongs to the technical field of electronic packaging, and provides a method for testing an aluminum oxide HTCC metallized sheet resistance and a via resistance, which comprises the following steps: s1, designing a standard sample layout based on a six-inch or eight-inch aluminum oxide HTCC substrate process; s2, processing according to a standard aluminum oxide HTCC substrate process to manufacture a standard sample to be tested; s3, measuring the resistors to be measured in the standard sample in sequence by adopting a Kelvin method and recording the resistance value; s4, establishing an equation set to solve simultaneously according to the resistance expression to be tested established in S1 and the test data obtained in S3; the metallization sheet resistance and the via resistance can be obtained by solving by eliminating the same sub-resistance elements. The method comprehensively considers the influence of factors such as the width, the thickness and the direction of a printing line in the HTCC process on the metallization sheet resistance in the design of the standard sample, reduces the test error and the system error through the measurement data of the large sample, and establishes the statistical rule of the parameters to be measured.
Description
Technical Field
The invention relates to the technical field of electronic packaging, in particular to a method for testing the metallization sheet resistance and the via resistance of aluminum oxide HTCC.
Background
The High-temperature co-fired multilayer ceramic is widely applied to the industries of microwave, wireless communication, space navigation, weapons, power electronics and the like, and is typically applied to optical transceiver modules in the optical communication industry, microwave power amplifier shells in radar and wireless communication, substrates of microwave transceiver components, diodes for power electronics, MOS (metal oxide semiconductor) tubes, optical coupler shells and the like.
The aluminum oxide HTCC substrate is a three-dimensional circuit wiring technology which takes aluminum oxide as a dielectric layer and takes high-melting-point metal such as tungsten or molybdenum manganese as a metalized conductor material. In the processing stage of the green porcelain, tungsten metallization patterns and metallization through holes are manufactured on a single aluminum oxide green porcelain strip by adopting the processes of punching, hole filling and printing, and then a plurality of layers of green porcelain strip laminations are laminated to form a three-dimensional wiring structure with a certain interconnection relation. The green porcelain lamination is sintered at a high temperature of more than 1550 ℃ to form a firm and stable cooked porcelain. The porcelain is further processed into a required substrate or shell product by the following processes of nickel plating, brazing, nickel plating, gold plating and the like. Tungsten is used as a metallization material to be sintered with ceramics synchronously, so the name of high-temperature co-firing is also obtained. The surface of the porcelain product can be printed with tungsten or molybdenum-manganese metallization slurry again to form metallization through post-firing.
The tungsten or molybdenum-manganese metallization pattern in an alumina HTCC substrate serves two main functions. The first is to transmit electric signals, and the second is to be used as a transition layer to realize welding with metal parts. When used as the first function, it is desirable to have a lower resistivity. Therefore, when the aluminum oxide HTCC technology is used to design related products, such as the housing of a high-voltage and high-current power electronic device or the substrate of a hybrid circuit module with complicated wiring, the metallization square resistance and the via resistance are usually the main criteria for designing the electrical parameters of the product.
According to the design rules issued by related companies such as Kyocera, NTK, Adtech and the like and the literature data about metallization, the metallization sheet resistance of the aluminum oxide HTCC substrate surface after gold plating is about 5m omega/□ -7m omega/□; the square resistance of the non-plated layer or the embedded metallization is about 10 mO/□ -20 mO/□; the resistance of a single layer metallized via (e.g., 0.25mm diameter and 0.25mm thickness) is about 3m omega to about 6m omega. Therefore, the metallized sheet resistance and the via hole resistance belong to the low resistance value range, the requirement on measurement is high, and a conventional double-line direct current resistance measurement method is easy to introduce large measurement errors and even cannot accurately measure. Even with the kelvin measurement method, there is a large fluctuation in the measurement result. This is because the aluminum oxide HTCC substrate is a thick film circuit fabricated by a printing process, and the magnitude of the metallization sheet resistance is affected by a number of process factors, including: the thickness of the printing silk screen photosensitive resist, the width of the printing lines, the direction of the printing lines, the solid content and viscosity of the metallization slurry and the like, and in addition, other technological parameters of the HTCC such as the thickness of the green tape, the shrinkage rate of the green ceramic, the lamination pressure, the sintering parameters and the like all have certain influence on the metallization state.
Whether for the electrical parameter design of a new product, or for the work of evaluating the stability of the HTCC process and researching the formula of the metallization paste, it is necessary to obtain accurate values of the metallization sheet resistance and the metallization via. At present, there are few relevant papers and patents on the method for measuring the metallization sheet resistance and the via resistance of the alumina high-temperature co-fired ceramic. It is necessary to develop an accurate, efficient and high-precision measurement method.
Disclosure of Invention
The invention is to solve the problems in the prior art, namely, the invention provides a method for testing the metallization sheet resistance and the via resistance of the alumina HTCC, and the method for testing the metallization sheet resistance and the via resistance of the alumina HTCC reduces the influence of secondary factors on the classification performance; the dimension is reduced, the redundant information of data is reduced, and the operation amount is reduced; the detection precision is improved.
In order to solve the technical problems, the invention provides the following technical scheme:
a method for testing the metallization sheet resistance and the via resistance of an aluminum oxide HTCC,
and S1, designing a layout of the standard sample based on the six-inch or eight-inch aluminum oxide HTCC substrate process. The standard sample comprises a series of resistors to be tested consisting of metalized lines and through holes. According to the physical meaning, each resistor to be tested can be decomposed into linear combination of sub-resistor elements such as 'test point (Pad) contact resistor', 'metallization line (Trace) resistor' and 'Via hole (Via) resistor', and accordingly the resistors to be tested can be named one by one and a resistance expression can be written.
And S2, processing and manufacturing the standard sample to be tested according to the standard aluminum oxide high-temperature co-fired multilayer ceramic substrate process. Generally comprises the following steps: preparing raw alumina ceramic tape, perforating, filling holes, printing, laminating, cutting, sintering, leveling, electroplating and the like.
And S3, sequentially measuring the resistors to be measured in the standard sample by adopting a Kelvin method and recording the resistance value. And marking or eliminating abnormal test data after the test process and the test are completed.
S4, establishing an equation set to solve simultaneously according to the resistance expression to be tested established in S1 and the test data obtained in S3; the metallization sheet resistance and the via resistance can be obtained by solving by eliminating the same sub-resistance elements.
Specifically, the specific steps of S1 are,
the S11 standard sample can be made of four alumina green porcelain strips with the thickness of 0.15mm-0.42mm, and the green porcelain strips are sequentially named as Layer1, Layer2, Layer3 and Layer4 from bottom to top. When the standard sample is manufactured, through holes Via are placed in each layer of ceramic, namely, corresponding punching and hole filling screen plates are designed; only the lower surface of Layer1 and the upper surface of Layer4 are provided with metalized patterns, namely corresponding printing screens are designed and named MLeye 0 and MLeye 4 respectively;
s12, manufacturing test points (Pad) at two ends of all the resistors to be tested on the MLayer 4. "test points (Pad)" are the same pattern, such as a square or a circle with a side length or a diameter of 0.8mm to 1.5 mm;
s13, the width of the metallization line (Trace) in the resistor to be tested is in an equal ratio series, such as (0.15mm,0.30mm,0.60mm), (0.20mm,0.40mm,0.80 mm); the length of the metallized line (Trace) is in an arithmetic progression, such as (1.5mm,3.0mm,4.5mm,6mm, …); the directions of the metallization lines (Trace) comprise horizontal, vertical and 45-degree inclination.
S14, connecting one or more via holes in the single-layer ceramic in parallel through HTCC three-dimensional wiring, connecting the via holes in series in adjacent ceramic layers, and connecting the via holes by combining a metallization line (Trace) to form the resistor to be tested with different resistance values and certain regularity of resistance value difference.
Further, in S3, the resistance to be measured having a printing defect such as a graphic defect is marked by appearance inspection before the test to avoid measurement; marking the test data with the same geometric constitution but with obvious difference of test resistance values and rejecting the test data.
In step S1, the resistor to be tested includes R1 ═ Rx + (1.5mm/0.15mm) × Rsq ═ Rx +10 × Rsq; r2 ═ Rx + (1.35mm/0.15) × Rsq where Rx is "sum of contact resistances of test points (Pad) at both ends", Rsq is square resistance of the metallization line to be solved.
In step S1, the resistor to be measured includes Ra ═ Rx + Rt +8 × Rvia; rb + Rx +3 Rt +16 Rvia; rc +5 Rt +24 Rvia, where Rx is the "sum of the contact resistances of the two end test points (Pad), and Rt is the resistance of a particular metallization line. Rvia is the resistance of the via to be sought.
The method for testing the metallization sheet resistance and the via hole resistance of the aluminum oxide HTCC provided by the invention has the beneficial effects that:
a series of regular resistors to be tested are designed and manufactured in a six-inch or eight-inch aluminum oxide HTCC substrate, relevant material factors and process factors influencing the metallization sheet resistance and the via hole resistance are taken into consideration, and then the statistical regularity of the relation between the parameters to be tested and the influencing factors can be found out through analysis and solution of large sample test data. The metallization sheet resistance and the via hole resistance obtained by the method have the characteristics of comprehensiveness, high efficiency, accuracy and high precision, and can provide powerful guidance for the design of new product electrical parameters. In addition, the method of the invention can also achieve better effect if used for the characteristic study of the metallization slurry and the monitoring of the state stability of the HTCC process.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention. In the drawings:
FIG. 1 is an eight inch alumina HTCC metallization sheet resistance and via test standard layout;
FIG. 2 is a schematic diagram of metallization routing for a 20mm by 20mm standard;
FIG. 3 is a schematic diagram of metallization line resistance measurement;
FIG. 4 is a schematic diagram of a metallized via resistance measurement;
FIG. 5 is a schematic flow chart of the method of the present invention.
Detailed Description
The invention is further described below with reference to the accompanying drawings.
As shown in fig. 5, a method for testing the metallization sheet resistance and the via resistance of an aluminum oxide HTCC includes the following steps:
s1, making a standard sample layout, and designing the standard sample layout based on a six-inch or eight-inch aluminum oxide HTCC substrate process;
s2, manufacturing a standard sample to be tested, and processing the standard sample to be tested according to a standard aluminum oxide HTCC substrate process;
s3, measuring the resistance to be measured, sequentially measuring the resistance to be measured in the standard sample by adopting a Kelvin method and recording the resistance value;
s4, solving the metallized square resistor and the via hole resistance value, and establishing simultaneous solution of an equation set according to the resistance expression to be tested established in S1 and the test data obtained in S3; the metallization sheet resistance and the via resistance can be obtained by solving by eliminating the same sub-resistance elements.
Example 1
As shown in fig. 1, an eight-inch aluminum oxide HTCC metallization sheet resistance and via hole test standard layout is provided, 36 20mm by 20mm standard samples can be designed and manufactured on one layout at a time, and each standard sample includes 20 to 40 resistors to be tested with similar characteristics and a certain rule.
Fig. 2 shows a representative 20mm by 20mm standard sample selected from fig. 1, wherein P2 is a metallization line (Trace) having a width of 0.15mm, and the standard sample comprises a set of metallization lines having lengths in an arithmetic series of 1.5mm,3.0mm,4.5mm, etc. P1 is the "test point Pad" at both ends of the metallization line, i.e. the position where the test probe is lapped, and the size of P1 is 1.0mm × 1.0 mm; p3 is a metalized via with a diameter of 0.20mm, and 1-3 vias can be connected in parallel under each Pad.
Fig. 3 is a schematic diagram illustrating resistance test of the metallization line. The probe on the "test point Pad" used a kelvin four-wire probe. R1 is a resistor having a width of 0.15mm and a length of 1.5mm, R2 is a resistor having a width of 0.15mm and a length of 10.5mm, it is clear that: resistance R1 ═ Rx + (1.5mm/0.15mm) × Rsq ═ Rx +10 ═ Rsq; the resistance R2 ═ Rx + (1.35mm/0.15) × Rsq ═ Rx +90 × Rsq, where Rx is "sum of contact resistances of the test points (Pad) at both ends", and Rsq is the square resistance of the metallization line to be solved. The two equations are combined, Rsq ═ R2-R1)/80.
The resistance to be measured of the metallized Via is shown in fig. 4, and it is apparent that: resistance Ra + Rt +8 × Rvia; resistance Rb + Rx +3 Rt +16 Rvia; and the resistance Rc +5 Rt +24 Rvia, wherein Rx is the sum of the contact resistances of the test points (Pad) at two ends, and Rt is the resistance of a specific metallization line. The Rvia is the resistance of the metallized through hole to be solved, and the value of the Rvia can be obtained by three equations in a simultaneous manner.
Through resistance testing of large samples of series resistance in 36 standard samples on an eight-inch layout and statistical analysis, a relation rule between influence factors such as metallization square resistance and line width, length, thickness and direction can be found.
Obviously, according to the design idea of embodiment 1, by changing the geometric dimensions of the layout design elements to combine and match, further embodiments can be derived, and all of them should be within the protection scope claimed by the claims of this patent.
In summary, a series of regular resistors to be tested are designed and manufactured in a six-inch or eight-inch aluminum oxide HTCC substrate, relevant material factors and process factors affecting metallization sheet resistance and via hole resistance are taken into consideration, and then statistical regularity of the relationship between the parameters to be tested and the affecting factors can be found out through analysis and solution of large sample test data. The metallization sheet resistance and the via hole resistance obtained by the method have the characteristics of comprehensiveness, high efficiency, accuracy and high precision, and can provide powerful guidance for the design of new product electrical parameters. In addition, the method of the invention can also achieve better effect if used for the characteristic study of the metallization slurry and the monitoring of the state stability of the HTCC process.
Although the present invention has been described in detail with reference to the foregoing embodiments, it will be apparent to those skilled in the art that changes may be made in the embodiments and/or equivalents thereof without departing from the spirit and scope of the invention. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (8)
1. A method for testing the metallization sheet resistance and the via resistance of an aluminum oxide HTCC is characterized by comprising the following steps: the method comprises the following steps:
s1, making a standard sample layout, and designing the standard sample layout based on a six-inch or eight-inch aluminum oxide HTCC substrate process;
s2, manufacturing a standard sample to be tested, and processing the standard sample to be tested according to a standard aluminum oxide HTCC substrate process;
s3, measuring the resistance to be measured, sequentially measuring the resistance to be measured in the standard sample by adopting a Kelvin method and recording the resistance value;
s4, solving the metallized square resistor and the via resistance value, and establishing simultaneous solution of an equation set according to the resistance to be tested expression established in S1 and the test data obtained in S3; the metallization sheet resistance and the via resistance can be obtained by solving by eliminating the same sub-resistance elements.
2. The method for testing the metallization sheet resistance and the via resistance of the aluminum oxide HTCC according to claim 1, wherein: the specific steps of S1 are,
s11, preparing a standard sample from four alumina green porcelain tapes with the thickness of 0.15-0.42 mm, wherein the green porcelain tapes are sequentially named as Layer1, Layer2, Layer3 and Layer4 from bottom to top; when the standard sample is manufactured, a through hole Via is placed in each layer of ceramic, namely a corresponding punching and hole filling screen plate is designed; only the lower surface of Layer1 and the upper surface of Layer4 are provided with metalized patterns, namely corresponding printing screens are designed and are respectively named MLeye 0 and MLeye 4;
s12, manufacturing test points at two ends of all resistors to be tested on the MLeye 4;
s13, the width of the metallization line in the resistor to be tested is in an equal ratio array, the length of the metallization line is in an equal difference array, and the direction of the metallization line comprises horizontal, vertical and 45-degree inclination;
and S14, connecting one or more via holes in the single-layer ceramic in parallel through HTCC three-dimensional wiring, connecting a plurality of via holes in series in adjacent ceramic layers, and connecting the via holes by combining metallization lines to form the resistor to be tested with different resistance values and certain regularity of resistance value difference.
3. The method for testing the metallization sheet resistance and the via resistance of the aluminum oxide HTCC according to claim 2, wherein: the "test points" in S12 are the same pattern.
4. The method for testing the metallization sheet resistance and the via resistance of the aluminum oxide HTCC according to claim 3, wherein: the shape of the "test point" in S12 is a square or circle with a side length or diameter of 0.8mm to 1.5 mm.
5. The method for testing the metallization sheet resistance and the via resistance of the aluminum oxide HTCC according to claim 1, wherein: in S1, the resistor to be tested includes R1 ═ Rx +10 ═ Rsq; r2 ═ Rx +90 × Rsq; wherein Rx is the sum of the contact resistances of the test points at two ends, and Rsq is the square resistance of the metallization line to be solved.
6. The method for testing the metallization sheet resistance and the via resistance of the aluminum oxide HTCC according to claim 1, wherein: in S1, the resistor to be measured includes Ra ═ Rx + Rt +8 × Rvia; rb + Rx +3 Rt +16 Rvia; rc +5 Rt +24 Rvia, where Rx is "the sum of the contact resistances of the test points at both ends", Rt is the resistance of a specific metallization line, and Rvia is the resistance of the via to be determined.
7. The method for testing the metallization sheet resistance and the via resistance of the aluminum oxide HTCC according to claim 1, wherein: in S3, before testing, the resistance to be tested with printing defects such as pattern defects is marked out to avoid measurement through appearance inspection; marking the test data with the same geometric constitution but with obvious difference of test resistance values and rejecting the test data.
8. A computer readable storage medium having stored therein at least one instruction, at least one program, a set of codes, or a set of instructions, which is loaded and executed by a processor to implement the method of testing square resistance and via resistance of alumina HTCC metallization according to any one of claims 1 to 7.
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