CN115084369A - Gating tube material, gating tube unit and preparation method thereof - Google Patents
Gating tube material, gating tube unit and preparation method thereof Download PDFInfo
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- 239000000463 material Substances 0.000 title claims abstract description 125
- 238000002360 preparation method Methods 0.000 title claims abstract description 8
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 21
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 19
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 18
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 16
- 229910052706 scandium Inorganic materials 0.000 claims abstract description 16
- 229910052727 yttrium Inorganic materials 0.000 claims abstract description 16
- 229910052785 arsenic Inorganic materials 0.000 claims abstract description 15
- 239000000126 substance Substances 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims description 24
- 238000004544 sputter deposition Methods 0.000 claims description 13
- 238000002425 crystallisation Methods 0.000 claims description 8
- 230000008025 crystallization Effects 0.000 claims description 8
- 229910001215 Te alloy Inorganic materials 0.000 claims description 7
- 230000007704 transition Effects 0.000 claims description 7
- 230000001052 transient effect Effects 0.000 claims description 6
- 238000000231 atomic layer deposition Methods 0.000 claims description 5
- 238000005229 chemical vapour deposition Methods 0.000 claims description 5
- 238000001704 evaporation Methods 0.000 claims description 5
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 5
- 238000004549 pulsed laser deposition Methods 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 2
- 230000000694 effects Effects 0.000 claims description 2
- 230000008020 evaporation Effects 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 abstract description 8
- 229910052738 indium Inorganic materials 0.000 abstract description 6
- 239000010410 layer Substances 0.000 description 55
- 239000002346 layers by function Substances 0.000 description 26
- 239000010936 titanium Substances 0.000 description 18
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 10
- 230000008859 change Effects 0.000 description 9
- 230000015654 memory Effects 0.000 description 8
- 150000004770 chalcogenides Chemical class 0.000 description 7
- 238000009826 distribution Methods 0.000 description 7
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 229910052697 platinum Inorganic materials 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 5
- 229910052721 tungsten Inorganic materials 0.000 description 5
- 239000010937 tungsten Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000004088 simulation Methods 0.000 description 4
- 230000006399 behavior Effects 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 241000282414 Homo sapiens Species 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000001351 cycling effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000008204 material by function Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000001537 neural effect Effects 0.000 description 1
- 238000005191 phase separation Methods 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 230000000946 synaptic effect Effects 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0623—Sulfides, selenides or tellurides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3464—Sputtering using more than one target
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/305—Sulfides, selenides, or tellurides
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of the switching material, e.g. layer deposition
- H10N70/026—Formation of the switching material, e.g. layer deposition by physical vapor deposition, e.g. sputtering
Abstract
The invention discloses a gate tube material, a gate tube unit and a preparation method thereof, and belongs to the technical field of micro-nano electronics. The gating tube material is a compound containing In, Te and M, wherein M is a doping element and is at least one of C, Si, N, As, Sc, Ti, Ga, Hf and Y. The chemical general formula of the gating tube material is In x Te y M 100‑x‑y Wherein x and y are atomic percent of elements, x is more than or equal to 10 and less than or equal to 45, y is more than or equal to 55 and less than or equal to 90, and 0 and less than or equal to 100-x-y are less than or equal to 15. The gate tube material consists of In, Te and doping elements, is doped on the basis of an In-Te compound, has relatively simple components, is easy to regulate and control, has high thermal stability and small leakage current, and can pass throughOne-step element doping can improve the durability, the thermal stability and the on-state current density.
Description
Technical Field
The invention belongs to the technical field of micro-nano electronics, and particularly relates to a gate tube material, a gate tube unit and a preparation method thereof.
Background
With the continuous progress of technology, the amount of information and data required by human beings is increasing, and the data is exponentially increased, so that the huge data needs a larger capacity and a higher density memory to be accessed and processed. To date, researchers have proposed many new types of memories to solve this problem, such as phase change memory, ferroelectric memory, and resistive random access memory. Among them, the phase change memory based on rapid and reversible switching between amorphous phase and crystalline phase is one of the most promising candidates for large-scale industrialization, and has stimulated the interest of the researchers.
In 2015, intel and meiguang successfully commercialized a 3DXPoint phase change memory based on a crossbar array technology, and a leap-type increase in the density of phase change memory was realized. This three-dimensional stacking technique usually uses a "half V" operation method to read and write data, but this method may cause non-ideal current path of adjacent cells, causing crosstalk current. The non-ideal current path not only increases power consumption, but also causes device read-write errors, and is not beneficial to large-scale three-position integration. Therefore, a gating device needs to be connected in series with each phase change memory cell to suppress leakage current. The array size is expanded. Among them, the most promising gate tube not based on amorphous chalcogenide material is mo. Chalcogenide gating materials may be applied to neuronal synaptic simulation in addition to their use to suppress leakage currents. Therefore, a gate material with low leakage current is a necessary condition for achieving low power consumption. Therefore, there is a need for the research of amorphous chalcogenide gating materials.
Since the first discovery of materials with threshold transition characteristics in the last 60 th century, a series of chalcogenide materials with threshold transition characteristics have been discovered so far. The mainstream chalcogenide gating material at present comprises GeAsSiSe, GeAsSiTe and other materials, but has the defects of complex components, easy phase separation, large leakage current and the like. The search for a gating material which is simple in component and excellent in performance is an urgent problem to be solved.
Disclosure of Invention
Aiming at the defects of the prior art, the invention aims to provide a gating tube material, a gating tube unit and a preparation method thereof, and aims to solve the problems that the mainstream chalcogenide gating material is complex in component, easy to phase separate and large in leakage current.
In order to achieve the above object, In a first aspect, the present invention provides a gate tube material, wherein the gate tube material has a chemical formula of In x Te y M 100-x-y Wherein M is a doping material, the doping material comprises at least one of C, Si, N, As, Sc, Ti, Ga, Hf and Y, x is more than or equal to 5 and less than or equal to 50, Y is more than or equal to 50 and less than or equal to 95, and 0 is more than or equal to 100-x-Y is less than or equal to 25.
In an alternative example, the gate tube material is doped with an In-Te alloy as a base material, and the doping element M is used to improve at least one of crystallization temperature, thermal stability, durability, leakage current, or cycling characteristics of the In-Te alloy material.
In an alternative example, 10 ≦ x ≦ 45, 55 ≦ y ≦ 90, 0 ≦ 100-x-y ≦ 15.
In an alternative example, the gate tube material may be operable by an electrical signal to effect a transient transition from a high impedance state to a low impedance state, the gate tube material being transiently and spontaneously returned to the high impedance state upon removal of the electrical signal.
In a second aspect, the present invention provides a gate pipe unit, including:
a gate tube material layer comprising a gate tube material as provided in the first aspect;
the bottom electrode layer is positioned on the lower surface of the gate tube material layer;
and the top electrode layer is positioned on the upper surface of the gate tube material layer.
In an optional example, the thickness of the gate tube material layer is 10nm to 120 nm.
In an optional example, the thickness of the bottom electrode layer is 100nm to 160 nm; the thickness of the top electrode layer is 40 nm-100 nm.
In a third aspect, the invention provides a preparation method of a gate tube unit, which comprises the following steps:
preparing a bottom electrode layer on a substrate;
preparing the gate tube material mentioned in the first aspect on the bottom electrode layer to form a gate tube material layer;
and preparing a top electrode layer on the gate tube material layer.
In an alternative example, the method for preparing the bottom electrode layer, the gate tube material layer and the top electrode layer is one of a chemical vapor deposition method, an atomic layer deposition method, a sputtering method, a pulsed laser deposition method, an evaporation method or a molecular beam epitaxy method.
In an alternative example, by doping the elemental M target, InTe 9 Co-sputtering the target and the In target to prepare a gating tube material, and adjusting the sputtering power of different targets to prepare gating tube materials with different components; the doping material of the doping element M target comprises at least one of C, Si, N, As, Sc, Ti, Ga, Hf and Y.
Generally, compared with the prior art, the above technical solution conceived by the present invention has the following beneficial effects:
the gate tube material provided by the invention is a compound based on In-Te alloy, and because In-Te can form a strong and stable bond, the material system has high thermal stability, large band gap and small leakage current. Such as In 2 Te 3 The band gap of the crystal material is about 1.0eV, the amorphous band gap is larger, and the crystallization temperature is about 230 ℃.
The gating tube material provided by the invention can further improve the thermal stability, leakage current, cycle performance and durability of the device by further introducing at least one of elements such As C, Si, N, As, Sc, Ti, Ga, Hf and Y into an In-Te alloy compound system. For example, C, Si can be introduced to form strong short bonds and tetrahedrons to improve thermal stability, and As can be introduced to reduce the movement capability of system atoms to improve durability.
Compared with the existing sulfur system gating tube material, the gating tube material provided by the invention has simple components and is easy to regulate and control.
Drawings
Fig. 1 is a schematic structural diagram of a gate tube unit provided in an embodiment of the present invention;
FIG. 2 shows In according to an embodiment of the present invention x Te y M 100-x-y The structure schematic diagram of the gate tube unit;
fig. 3 is a flowchart of a method for manufacturing a gate tube unit according to an embodiment of the present invention;
FIG. 4 shows In according to the present invention 2 Te 3 Experimental R-T plots;
FIG. 5 shows In according to an embodiment of the present invention 2 Te 3 The correlation distribution diagram of the doped Si/As;
FIG. 6 shows In according to an embodiment of the present invention 2 Te 3 Coordination number distribution plot of doped Si/As;
FIG. 7 shows In according to an embodiment of the present invention 2 Te 3 Doping a sequence parameter curve of Si in Si;
FIG. 8 shows In according to an embodiment of the present invention 2 Te 3 A tetrahedral distribution map of Si in doped Si;
FIG. 9 shows In according to an embodiment of the present invention 2 Te 3 Doping Si/As square displacement curve;
the same reference numbers will be used throughout the drawings to refer to the same elements or structures, wherein: 101 is a bottom electrode layer, 102 is a gate tube material functional layer, and 103 is a top electrode layer.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
In order to meet the requirements of developing an amorphous chalcogenide gate tube material which is simple in components, high in stability, low in leakage current and environment-friendly, the embodiment of the invention provides a novel gate tube material, a gate tube unit and a manufacturing method of the gate tube unit. The technical scheme is as follows:
on one hand, the embodiment of the invention provides a material of a gate tube, wherein the chemical general formula of the material of the gate tube is represented as In x Te y M 100-x-y Wherein the M element is at least one of C, Si, N, As, Sc, Ti, Ga, Hf and Y, x is more than or equal to 5 and less than or equal to 50, Y is more than or equal to 50 and less than or equal to 95, and 0 is more than or equal to 100-x-Y and less than or equal to 25.
Preferably, In x Te y M 100-x-y In the formula, x is more than or equal to 10 and less than or equal to 45, y is more than or equal to 55 and less than or equal to 90, and 0-x-y is more than or equal to 100-x-y and less than or equal to 15.
Preferably, the gate material in this general chemical range is electrically operable to achieve a transient transition from a high resistance state to a low resistance state, and when the voltage is removed, the material returns to the initial high resistance state.
Schematic formula In according to the general chemical formula x Te y M 100-x-y (wherein, M element is at least one of C, Si, N, As, Sc, Ti, Ga, Hf and Y) and the gating tube material can be prepared by chemical vapor deposition, atomic layer deposition, sputtering, pulsed laser deposition, evaporation and molecular beam epitaxy.
Because the gate tube material is doped by taking In-Te alloy as a base material, and an In-Te bond has strong polarity and bond energy, the material system has larger band gap and crystallization temperature, and can greatly improve the leakage current of a device. In addition, by introducing the doping element M (at least one of C, Si, N, As, Sc, Ti, Ga, Hf, and Y), the performance of the device, such As crystallization temperature, thermal stability, durability, leakage current, cycle characteristics, and the like, can be further improved. For example, C, Si elements are introduced to form strong short bonds and tetrahedrons, C, Si atoms have weaker movement capability, the atom movement capability of a system can be reduced to a certain extent, the cycle capability and the thermal stability of the device can be improved, and the device can bear higher working temperature and working current. As element is introduced, the connectivity of an amorphous network is enhanced, the atomic motion capability of a system is reduced, and the durability and the cycle characteristic of the device can be improved. The M element can be introduced by means of multi-target co-sputtering, ion implantation, thermal diffusion, patch sputtering and the like.
On the other hand, an embodiment of the present invention further provides a gate tube unit, where the gate tube unit includes:
the bottom electrode layer, a gate tube material functional layer positioned on the bottom electrode layer and a top electrode layer positioned on the gate tube material, wherein the gate tube material of the gate tube material layer is a compound comprising In, Te and M, and the general formula of the gate tube material is In x Te y M 100-x-y Wherein, the M element is at least one of C, Si, N, As, Sc, Ti, Ga, Hf and Y, x is more than or equal to 5 and less than or equal to 50, Y is more than or equal to 50 and less than or equal to 95, and 0 is more than or equal to 100-x-Y and less than or equal to 25.
Preferably, in the gate tube functional layer, x is more than or equal to 10 and less than or equal to 45, y is more than or equal to 55 and less than or equal to 90, and 0 and less than or equal to 100-x-y is less than or equal to 15.
Optionally, the bottom electrode layer is made of one or more of titanium nitride, titanium, platinum, aluminum, tungsten, gold, silver and copper, and the thickness of the bottom electrode layer is 100nm to 160 nm.
Optionally, the thickness of the gate tube material functional layer is 10nm to 120 nm.
Optionally, the material of the top electrode layer includes one or more of titanium nitride, titanium, platinum, aluminum, tungsten, gold, silver and copper, and the thickness of the top electrode layer is 40nm to 100 nm.
On the other hand, the embodiment of the invention also provides a preparation method of the gate tube unit, which comprises the following steps:
in Si/SiO 2 Forming a bottom electrode layer on the substrate;
forming a gate tube material functional layer on the bottom electrode layer,the functional layer material is a compound containing In, Te and M, wherein M is at least one of C, Si, N, As, Sc, Ti, Ga, Hf and Y. The chemical general formula of the gating tube material is In x Te y M 100-x-y Wherein x is more than or equal to 5 and less than or equal to 50, y is more than or equal to 50 and less than or equal to 95, and 0-x-y is more than or equal to 100 and less than or equal to 25;
preferably, in the gate tube functional layer, x is more than or equal to 10 and less than or equal to 45, y is more than or equal to 55 and less than or equal to 90, and 0 and less than or equal to 100-x-y is less than or equal to 15.
And forming a top electrode on the gate tube material functional layer.
Optionally, a method for forming the bottom electrode layer, the gate material functional layer, and the top electrode layer is one of a chemical vapor deposition method, an atomic layer deposition method, a sputtering method, a pulsed laser deposition method, an evaporation method, and a molecular beam epitaxy method.
Fig. 1 is a schematic structural diagram of a gate tube unit according to an embodiment of the present invention. The gate tube unit comprises a bottom electrode layer 101, a gate tube material functional layer 102 on the bottom electrode layer 101, and a top electrode layer 103 on the gate tube material functional layer.
FIG. 2 shows In according to an embodiment of the present invention x Te y M 100-x-y The structure of the gate tube unit is schematically shown, wherein the gate tube material of the gate tube material functional layer 102 is a compound containing In, Te and M, and the chemical formula of the gate tube material is In x Te y M 100-x-y Wherein M can be at least one element selected from C, Si, N, As, Sc, Ti, Ga, Hf and Y, x is more than or equal to 5 and less than or equal to 50, Y is more than or equal to 50 and less than or equal to 95, and 0 is more than or equal to 100-x-Y and less than or equal to 25.
SiO in FIG. 2 2 The insulating layer is used for isolating different gate tube units so as to prepare a plurality of gate tube units made of the same material in batches.
Preferably, in the gate tube functional layer, x is more than or equal to 10 and less than or equal to 45, y is more than or equal to 55 and less than or equal to 90, and 0 and less than or equal to 100-x-y is less than or equal to 15;
it should be noted that the gate tube material can realize the instantaneous transition from the high-resistance state to the low-resistance state under the operation of the electric signal, and can instantaneously and spontaneously return to the high-resistance state when the operation of the electric signal is removed.
Optionally, the material of the bottom electrode layer 101 is made of one or more of titanium nitride, titanium, platinum, aluminum, tungsten, gold, silver, and copper, and the thickness of the bottom electrode layer is 100nm to 160 nm.
In some embodiments, the thickness of the bottom electrode layer 101 is 100 nm. In other embodiments, the thickness of the bottom electrode layer 101 may be 110nm, 120nm, 130nm, 140nm, 150nm, 160nm, or the like.
Optionally, the thickness of the gate tube material functional layer 102 is 10nm to 120 nm.
In some embodiments, the gate tube material functional layer is 100nm thick. In other embodiments, the thickness of the gate tube material functional layer may be 10nm, 20nm, 30nm, 40nm, 50nm, 60nm, 70nm, 80nm, 90nm, 110nm, 120nm, or the like.
Preferably, the material of the top electrode layer comprises one or more of titanium nitride, titanium, platinum, aluminum, tungsten, gold, silver and copper, and the thickness of the top electrode layer is 40nm to 100 nm.
In some embodiments, the thickness of the top electrode layer 103 is 100 nm. In other embodiments, the thickness of the top electrode layer 103 may be 40nm, 50nm, 60nm, 70nm, 80nm, 90nm, or the like.
An embodiment of the present invention further provides a method for manufacturing a gate tube unit, and fig. 3 is a flowchart of the method for manufacturing a gate tube unit according to the embodiment of the present invention, as shown in fig. 3, the method includes:
s11: in Si/SiO 2 Forming a bottom electrode layer on the substrate;
s12: forming a gate tube material functional layer on the formed bottom electrode layer;
the gate tube material of the gate tube material functional layer is a compound containing In, Te and M, wherein M is at least one of C, Si, N, As, Sc, Ti, Ga, Hf and Y, and the chemical general formula is In x Te y M 100-x-y Wherein x is more than or equal to 5 and less than or equal to 50, y is more than or equal to 50 and less than or equal to 95, and 0-x-y is more than or equal to 100 and less than or equal to 25;
preferably, in the gate tube functional layer, x is more than or equal to 10 and less than or equal to 45, y is more than or equal to 55 and less than or equal to 90, and 0 and less than or equal to 100-x-y is less than or equal to 15;
it should be noted that the gate tube material can realize the transient transition from the high impedance state to the low impedance state under the operation of the electric signal, and the material can return to the original high impedance state after the voltage signal is removed.
S13: a top electrode layer is formed on the gate tube material functional layer.
Optionally, the method for forming the bottom electrode layer, the gate material functional layer, and the top electrode layer is one of a chemical vapor deposition method, an atomic layer deposition method, a sputtering method, a pulsed laser deposition method, an evaporation method, and a molecular beam epitaxy method.
The gate tube unit is described below by way of a specific embodiment.
The following are examples:
example 1
The embodiment provides a gate tube material, which is characterized in that: the chemical general formula of the gating tube material is In x Te y M 100-x-y (M is at least one of C, Si, N, As, Sc, Ti, Ga, Hf and Y), x and Y are atomic percent of elements, x is more than or equal to 5 and less than or equal to 50, Y is more than or equal to 50 and less than or equal to 95, and 0 is more than or equal to 100-x-Y is less than or equal to 25;
preferably, in the gate tube functional layer, x is more than or equal to 10 and less than or equal to 45, y is more than or equal to 55 and less than or equal to 90, and 0 and less than or equal to 100-x-y is less than or equal to 15;
specifically, a doping element M target (M is at least one of C, Si, N, As, Sc, Ti, Ga, Hf and Y) and InTe are used 9 Co-sputtering the target and the In target to prepare a functional layer material, and adjusting the sputtering power to prepare functional materials with different components.
Specifically, the thickness of the functional layer of the gate tube material is 10 nm-120 nm.
Preferably, in this embodiment, the thickness of the gate tube material functional layer is 100 nm; of course, in other embodiments, the thickness of the gate tube material may also be 10nm, 20nm, 30nm, 40nm, 50nm, 60nm, 70nm, 80nm, 90nm, 110nm, or 120nm, etc.
Specifically, FIG. 4 shows In 2 Te 3 R-T plot of (A), shows In 2 Te 3 After the temperature of the material exceeds 200 ℃, the resistance drops suddenly, and the material has phase change characteristics. More specifically, there is a preexisting gate for the same material systemThe characteristics have phase change characteristics, and only the specific components can show specific properties (shown as phase change characteristics), so that the material properties can be further regulated and controlled through regulating and controlling the components of a system or doping, and further the material is difficult to crystallize under the electrical operation, and shows gating performance.
Specifically, the material In of the gate tube x Te y M 100-x-y The gating characteristics of (a) are: the transient change from high impedance state to low impedance state can be realized under the operation of a certain electric signal, and the transient spontaneous return to the initial high impedance state can be realized after the electric signal is removed.
Example 2
As shown In FIG. 2, the present embodiment provides a gate tube In using the gate tube In of embodiment 1 x Te y M 100-x-y The gate tube device structure is made of materials.
A bottom electrode layer;
a functional layer of gate pipe material;
a top electrode layer.
Specifically, the bottom electrode layer and the top electrode layer are both made of inert metal materials, the inert metal materials are made of one or more of titanium nitride, titanium, platinum, aluminum, tungsten, gold, silver and copper, and the thicknesses of the bottom electrode layer and the top electrode layer are 100 nm-160 nm and 40 nm-100 nm respectively.
Preferably, the bottom electrode layer and the top electrode layer are both titanium nitride electrodes, and are both 100nm thick.
Example 3
This example provides In doped with Si/As element 2 Te 3 Amorphous system simulation.
Specifically, In is doped with Si/As As shown In FIG. 5 2 Te 3 The system is plotted As a function of the correlation distribution, the ordinate in fig. 5 represents the number of bonds formed, the abscissa represents the length of the bonds formed, and it can be seen from fig. 5 that shorter bonds (shown by dotted lines in fig. 5) are introduced after doping, which indicates that doping with Si/As elements can introduce shorter and stronger bonds and enhance the thermal stability of the material system.
Specifically, As shown In FIG. 6, Si/As is doped with In 2 Te 3 The coordination number distribution diagram of the system, in fig. 6, the ordinate represents the proportion, the abscissa represents the coordination number, which indicates that the Si element is mainly 4-coordination, the As element is mainly 3, 4-coordination, and high coordination atoms are introduced for Si/As doping, so that the connectivity of the amorphous network can be enhanced, and the stability of the amorphous system can be further improved.
Specifically, fig. 7 calculates the q-parameter distribution of Si atoms, the ordinate in fig. 7 indicates the number and the abscissa indicates the local structural sequence parameter, and in general, we consider clusters with the sequence parameter q lying between 0.8 and 1.0 as tetrahedral cluster structures, indicating that Si atoms form mainly tetrahedral structures in amorphous systems, with a ratio of 82.8%. FIG. 8 shows In according to an embodiment of the present invention 2 Te 3 As shown in FIG. 8, the distribution diagram of the tetrahedron of Si in doped Si shows that Si atoms in the system are mainly in a tetrahedral structure, and the tetrahedron can effectively improve the stability of the material and inhibit crystallization behavior.
Specifically, this example simulates In doped with Si/As 2 Te 3 The dynamic properties before and after the system are shown in fig. 9, the ordinate represents the mean square displacement, the abscissa represents the simulation time, and the slope of the curve can represent the movement capacity of atoms. The results in fig. 9 show that the atoms have weaker motion capability after the doping of Si/As, which can effectively reduce the atom movement, inhibit the crystallization behavior of the system, and enhance the stability and durability.
In addition, the applicant finds through experimental research that C, N doping can introduce short bonds and reduce the atomic motion capability of a system, Ga doping is mainly introduced into tetrahedrons, and Hf, Y, Sc and Ti are introduced into polyhedral structures. Can effectively improve the stability or durability of the system.
Specifically, the simulation result shows that the doping element M introduced into the In-Te system can effectively inhibit crystallization behavior, enhance the stability of the system and is beneficial to the expression of the gating performance of the system.
It will be understood by those skilled in the art that the foregoing is only a preferred embodiment of the present invention, and is not intended to limit the invention, and that any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (10)
1. The material of the gate tube is characterized In that the chemical general formula of the material of the gate tube is In x Te y M 100-x-y Wherein M is a doping material, the doping material comprises at least one of C, Si, N, As, Sc, Ti, Ga, Hf and Y, x is more than or equal to 5 and less than or equal to 50, Y is more than or equal to 50 and less than or equal to 95, and Y is more than or equal to 0 and less than or equal to 100-x-Y and less than or equal to 25.
2. The gate tube material as claimed In claim 1, wherein the gate tube material is doped with an In-Te alloy as a base material, and the doping element M is used to improve at least one of crystallization temperature, thermal stability, durability, leakage current or cycle characteristics of the In-Te alloy material.
3. The gate tube material as claimed in claim 1, wherein x is 10. ltoreq. x.ltoreq.45, y is 55. ltoreq. y.ltoreq.90, 0. ltoreq.100-x-y. ltoreq.15.
4. The gate tube material of any one of claims 1 to 3, wherein the gate tube material is operable to effect a transient transition from a high impedance state to a low impedance state upon operation of an electrical signal, the gate tube material transiently returning to the high impedance state spontaneously upon removal of the electrical signal.
5. A gate tube unit, comprising:
a gate tube material layer comprising a gate tube material as claimed in any one of claims 1 to 4;
the bottom electrode layer is positioned on the lower surface of the gate tube material layer;
and the top electrode layer is positioned on the upper surface of the gate tube material layer.
6. The gate tube unit of claim 5, wherein the gate tube material layer has a thickness of 10nm to 120 nm.
7. The gate tube unit of claim 5, wherein the thickness of the bottom electrode layer is 100nm to 160 nm; the thickness of the top electrode layer is 40 nm-100 nm.
8. The preparation method of the gate tube unit is characterized by comprising the following steps of:
preparing a bottom electrode layer on a substrate;
preparing the gate tube material of any one of claims 1 to 4 on the bottom electrode layer to form a gate tube material layer;
and preparing a top electrode layer on the gate tube material layer.
9. The method of claim 8, wherein the bottom electrode layer, the gate tube material layer, and the top electrode layer are formed by one of chemical vapor deposition, atomic layer deposition, sputtering, pulsed laser deposition, evaporation, or molecular beam epitaxy.
10. The method of claim 8 or 9, characterized by doping the elemental M target, InTe 9 Co-sputtering the target and the In target to prepare a gating tube material, and adjusting the sputtering power of different targets to prepare gating tube materials with different components; the doping material of the doping element M target comprises at least one of C, Si, N, As, Sc, Ti, Ga, Hf and Y.
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