CN115083942A - Wafer state detection method, system, storage medium and detection device - Google Patents
Wafer state detection method, system, storage medium and detection device Download PDFInfo
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- CN115083942A CN115083942A CN202210980344.8A CN202210980344A CN115083942A CN 115083942 A CN115083942 A CN 115083942A CN 202210980344 A CN202210980344 A CN 202210980344A CN 115083942 A CN115083942 A CN 115083942A
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Abstract
The invention discloses a wafer state detection method, a wafer state detection system, a storage medium and a detection device, wherein the method comprises the following steps: sequentially dividing a first range, a second range and a third range from bottom to top in a region between two adjacent groups of wafer grooves in the wafer loading box; scanning the first range, the second range and the third range in sequence through vertical up-and-down movement of the sensor, and judging the position distribution of the wafer in the wafer loading box according to whether the signal of the sensor changes; the first range and the third range are scanned to judge whether wafers and laminated wafers exist in the wafer groove between the first range and the third range, and the second range is scanned to judge whether inclined wafers exist in the wafer groove between the first range and the third range. According to the change of the signal and the pulse counting value of the thickness of the wafer, the distribution states of the wafer, the laminated wafer and the inclined wafer in the wafer groove can be accurately judged, and the wafer and equipment are prevented from being damaged due to judgment errors.
Description
Technical Field
The invention relates to the field of wafer detection, in particular to a wafer state detection method, a wafer state detection system, a storage medium and a wafer state detection device.
Background
The safe access and transportation of the wafer is a very important technical index of a large production line of the integrated circuit, in the production process, the times of wafer transmission, wafer placement and wafer taking required by each production process are many, and the wafer breakage rate caused by transportation equipment is usually required to be less than one ten-thousandth, so that the requirements on the safety and reliability of the wafer transmission, the wafer placement and the wafer taking are higher.
At present, a manipulator is widely used in the technical field of semiconductor integrated circuit manufacturing, and the manipulator is an important device in a wafer transmission system, is used for storing and transporting wafers before and after process treatment, can receive an instruction, and is accurately positioned to a certain point on a three-dimensional or two-dimensional space to pick and place the wafers, so that the manipulator can pick and place a single wafer and can also pick and place a plurality of wafers.
However, when the robot is used to pick and place the wafer, especially when the wafer is in a protruding state or in a stacked, inclined or non-stacked state on the wafer cassette due to thermal deformation caused by the wafer during the transportation process or the thermal treatment process, the wafer or the device is damaged due to collision, which results in irreparable loss.
Disclosure of Invention
In order to overcome the problems that in the prior art, when the wafer is in a protruding state or in a lamination, oblique sheet or no sheet state on the wafer loading box due to the thermal deformation and the like caused in the transmission process or the heat treatment process of the wafer, the wafer or equipment is damaged due to collision when the manipulator carries out picking and placing operation on the wafer in the wafer loading box, and the irreparable loss is caused, the invention aims to provide a wafer state detection system, a wafer state detection method, a storage medium and a detection device.
In order to achieve the above purpose, the technical scheme adopted by the invention is as follows:
in a first aspect of the present invention, a wafer state detection method is provided, which includes the following steps:
dividing a region between two adjacent groups of wafer grooves (including regions in the two groups of wafer grooves) in the wafer loading box into a first range, a second range and a third range from bottom to top in sequence;
scanning the first range, the second range and the third range in sequence through vertical up-and-down movement of the sensor, and judging the position distribution of the wafer in the wafer loading box according to whether the signal of the sensor changes;
the first range and the third range are scanned to judge whether wafers and laminated wafers exist in the wafer groove between the first range and the third range, and the second range is scanned to judge whether inclined wafers exist in the wafer groove between the first range and the third range.
Sequentially dividing a region between two adjacent groups of wafer grooves (including regions in the two groups of wafer grooves) in the wafer loading box from bottom to top into a first range, a second range and a third range, namely determining the position range of the wafer, sequentially scanning the first range, the second range and the third range through vertical up-down uniform motion of a sensor, and judging the position distribution of the wafer in the wafer loading box according to whether pulse signals generated by the sensor change or not; the first range and the third range are scanned to judge whether wafers and laminated wafers exist in the wafer groove between the first range and the third range, and the second range is scanned to judge whether inclined wafers exist in the wafer groove between the first range and the third range. Then, according to the change of the signal and the pulse counting value of the thickness of the wafer, the distribution states of the wafer, the laminated wafer and the inclined wafer in the wafer groove can be accurately judged, and the damage of the wafer and equipment caused by the judgment error of a manipulator is prevented.
In some possible embodiments, the determining the first range by the upper position pulse count value of the first range and the lower position pulse count value of the first range specifically includes the following steps:
s1, sequentially placing N wafers into a wafer loading box, and carrying out scanning test on the wafers in the wafer loading box through a sensor;
s2, when the sensor blocks the lower surface of the current nth wafer, a lower surface position pulse value is stored through a rising edge, when the sensor leaves the upper surface of the current nth wafer, an upper surface position pulse value is stored through a falling edge, the thickness pulse count value of the nth wafer is calculated,
according to the formula: the absolute value of the thickness pulse count value of the nth wafer = (the pulse value of the upper surface position of the nth wafer-the pulse value of the lower surface position of the nth wafer);
s3, calculating the thickness pulse count value of each wafer in the remaining N-1 wafers in sequence according to S1 and S2, adding the thickness pulse count values of each wafer in the N wafers, and dividing by N to obtain the average thickness pulse count value of each wafer in the N wafers;
s4, calculating the pulse count value of the center position of the nth wafer according to the formula: the pulse count value of the center position of the nth wafer is = (the pulse count value of the upper surface of the nth wafer plus the pulse count value of the lower surface of the nth wafer)/2;
s5, determining an upper position pulse count value of a first range and a lower position pulse count value of the first range;
according to the formula: the upper position pulse count value in the first range = the pulse count value at the center of the nth wafer +1.5 × N wafers, and the pulse count average value of the thickness of each wafer + the redundancy value; according to the formula: the lower position pulse count value of the first range = center position pulse count value of the nth wafer-1.5 × average value of thickness pulse count per wafer in the N wafers-redundancy value.
In some possible embodiments, the determining the third range by using the upper position pulse count value of the third range and the lower position pulse count value of the third range specifically includes the following steps:
s1, when the sensor shields the lower surface of the current n +/-1 wafer, storing a lower surface position pulse value through the rising edge, when the sensor leaves the upper surface of the current n +/-1 wafer, storing an upper surface position pulse value through the falling edge, calculating the thickness pulse count value of the n +/-1 wafer,
according to the formula: the absolute value of the pulse count value of the thickness of the nth +/-1 wafer = (the pulse value of the upper surface position of the nth +/-1 wafer-the pulse value of the lower surface position of the nth +/-1 wafer);
s2, calculating the pulse count value of the center position of the nth +/-1 wafer according to the formula: the pulse count value of the center position of the nth +/-1 wafer is = (the pulse count value of the upper surface of the nth +/-1 wafer plus the pulse count value of the lower surface of the nth +/-1 wafer)/2;
s3, determining an upper position pulse count value of a third range and a lower position pulse count value of the third range;
according to the formula: the upper position pulse count value of the third range = the pulse count value at the center position of the nth ± 1 wafer +1.5 × N wafers, the pulse count average value of the thickness of each wafer + the redundancy value; according to the formula: the lower position pulse count value of the third range = N ± 1 wafer center position pulse count value-1.5 × N wafers thickness pulse count average-redundancy value.
In some possible embodiments, the determination of the redundancy value is specifically as follows: the method comprises the steps that a sensor scans and tests a wafer loading box for a plurality of times, the minimum value and the maximum value of the interval pulse counting values of two adjacent wafers are calculated, and the minimum value is subtracted from the maximum value to obtain a redundancy value;
the calculation formula of the distance between the two adjacent wafers comprises the following steps: subtracting the pulse values of the two upper surface positions of the two adjacent wafers, namely the absolute value of the spacing pulse count value = (the pulse value of the upper surface position of the nth wafer-the pulse value of the upper surface position of the nth +/-1 wafer) of the nth wafer and the n +/-1 wafer.
In some possible embodiments, the calculation formula of the distance between two adjacent wafers further includes: subtracting the pulse values of the two lower surface positions of the two adjacent wafers, namely the absolute value of the spacing pulse count value = (the pulse value of the lower surface position of the nth wafer-the pulse value of the lower surface position of the nth +/-1 wafer) of the nth wafer and the (n +/-1) th wafer.
In some possible embodiments, the calculation formula of the distance between two adjacent wafers further includes: subtracting the pulse count values of the two central positions of the two adjacent wafers, namely the spacing pulse count value = (the pulse count value of the central position of the nth wafer-the pulse count value of the central position of the nth +/-1 wafer) of the nth wafer and the (n +/-1) th wafer.
In some possible embodiments, the second range is determined by an upper position pulse count value of the first range and a lower position pulse count value of a third range,
according to the formula: the lower position pulse count value of the second range = the upper position pulse count value of the first range + the first fractional amount;
according to the formula: the upper position pulse count value of the second range = the lower position pulse count value of the third range — the second fractional amount;
the pulse count value of the first micro-scale and the pulse count value of the second micro-scale are both more than or equal to 10, and the upper position pulse count value in the second range minus the lower position pulse count value in the second range is more than or equal to 20;
or the like, or, alternatively,
the determination of the second range simultaneously satisfies the following condition:
the upper position pulse count value of the second range = the upper position pulse count value of the first range + the second fractional amount; the lower position pulse count value of the second range = the upper position pulse count value of the first range + the first fractional amount;
the value range of the first micro-scale is as follows: the first shrinkage is more than or equal to 10 and less than or equal to 50, and the value range of the second shrinkage is as follows: the second shrinkage is more than or equal to 30 and less than or equal to 150;
the lower position pulse count value of the third range-the upper position pulse count value of the second range is not less than 10; the upper position pulse count value of the second range-the lower position pulse count value of the second range is ≧ 20.
In some possible embodiments, the "determining the presence or absence of the wafer and the laminated wafer in the wafer groove between the first range and the third range" specifically includes:
when the movement position of the sensor is in a first range and a third range, if the sensor signal is not changed, judging that no wafer exists in the first range and the third range; if the sensor signal changes, judging that wafers exist in the first range and the third range, comparing the current wafer thickness pulse count value obtained through pulse counting with the maximum value and the minimum value of the wafer thickness pulse count values in the N wafers to judge whether the wafers are single wafers or laminated wafers, wherein the specific judging mode is as follows: if the current wafer thickness pulse count value is larger than the maximum value of the wafer thickness pulse count values in the N wafers, judging the wafer to be a laminated wafer; and if the current wafer thickness pulse count value is within the range of the maximum value and the minimum value of the wafer thickness pulse count values in the N wafers, judging the wafer to be a single wafer.
In some possible embodiments, the "determining whether there is a bevel wafer in the wafer slot between the first range and the third range" specifically includes:
when the movement position of the sensor is in the second range, if the signal of the sensor is not changed, judging that no wafer with inclined slices exists between the first range and the third range; and if the sensor signal changes, counting pulses, and judging that the wafer with the inclined slices is arranged between the first range and the third range.
In a second aspect of the invention, a wafer condition detection system is provided, comprising
A sensor: the wafer loading box is arranged on the sensor bracket, scans the wafer loading box in real time through vertical up-and-down motion and generates pulse signals, and a region (comprising regions in two groups of wafer grooves) between two adjacent groups of wafer grooves in the wafer loading box is divided into a first range, a second range and a third range from bottom to top in sequence;
a first judgment module: judging whether wafers and laminated wafers exist or not in the wafer grooves between the first range and the third range,
a second judging module: judging whether the wafer with the inclined plate exists or not in the wafer groove between the first range and the third range;
in some possible embodiments, the determining the first range by the upper position pulse count value of the first range and the lower position pulse count value of the first range specifically includes the following steps:
s1, sequentially placing N wafers into a wafer loading box, and carrying out scanning test on the wafers in the wafer loading box through a sensor;
s2, when the sensor blocks the lower surface of the current nth wafer, a lower surface position pulse value is stored through a rising edge, when the sensor leaves the upper surface of the current nth wafer, an upper surface position pulse value is stored through a falling edge, the thickness pulse count value of the nth wafer is calculated,
according to the formula: the absolute value of the thickness pulse count value of the nth wafer = (the pulse value of the upper surface position of the nth wafer-the pulse value of the lower surface position of the nth wafer);
s3, calculating the thickness pulse count value of each wafer in the remaining N-1 wafers in sequence according to S1 and S2, adding the thickness pulse count values of each wafer in the N wafers, and dividing by N to obtain the average thickness pulse count value of each wafer in the N wafers;
s4, calculating the pulse count value of the center position of the nth wafer according to the formula: the pulse count value of the center position of the nth wafer = (the pulse count value of the upper surface of the nth wafer + the pulse count value of the lower surface of the nth wafer)/2;
s5, determining an upper position pulse count value of a first range and a lower position pulse count value of the first range;
according to the formula: the upper position pulse count value in the first range = the pulse count value at the center of the nth wafer +1.5 × N wafers, and the pulse count average value of the thickness of each wafer + the redundancy value; according to the formula: the lower position pulse count value of the first range = center position pulse count value of the nth wafer-1.5 × average value of thickness pulse count per wafer in the N wafers-redundancy value.
In some possible embodiments, the third range is determined by the upper position pulse count values of the third range and the lower position pulse count values of the third range, which includes the following steps:
s1, when the sensor blocks the lower surface of the current n + -1 wafer, a lower surface position pulse value is stored through the rising edge, when the sensor leaves the upper surface of the current n + -1 wafer, an upper surface position pulse value is stored through the falling edge, the thickness pulse count value of the n + -1 wafer is calculated,
according to the formula: the absolute value of the pulse count value of the thickness of the nth +/-1 wafer = (the pulse value of the upper surface position of the nth +/-1 wafer-the pulse value of the lower surface position of the nth +/-1 wafer);
s2, calculating the pulse count value of the center position of the nth +/-1 wafer according to the formula: the pulse count value of the center position of the nth +/-1 wafer is = (the pulse count value of the upper surface of the nth +/-1 wafer plus the pulse count value of the lower surface of the nth +/-1 wafer)/2;
s3, determining an upper position pulse count value of a third range and a lower position pulse count value of the third range;
according to the formula: the upper position pulse count value of the third range = the pulse count value at the center position of the nth ± 1 wafer +1.5 × N wafers, the pulse count average value of the thickness of each wafer + the redundancy value; according to the formula: the lower position pulse count value of the third range = N ± 1 wafer center position pulse count value-1.5 × N wafers thickness pulse count average-redundancy value.
In some possible embodiments, the determination of the redundancy value is specifically as follows: the method comprises the following steps of carrying out a plurality of scanning tests on a wafer loading box by a sensor, calculating the minimum value and the maximum value of the interval pulse counting values of two adjacent wafers, and subtracting the minimum value from the maximum value to obtain a redundancy value;
the calculation formula of the distance between the two adjacent wafers comprises the following steps: subtracting the pulse values of the two upper surface positions of the two adjacent wafers, namely the absolute value of the spacing pulse count value = (the pulse value of the upper surface position of the nth wafer-the pulse value of the upper surface position of the nth +/-1 wafer) of the nth wafer and the n +/-1 wafer.
In some possible embodiments, the calculation formula of the distance between two adjacent wafers further includes: subtracting the pulse values of the two lower surface positions of the two adjacent wafers, namely the absolute value of the spacing pulse count value = (the pulse value of the lower surface position of the nth wafer-the pulse value of the lower surface position of the nth +/-1 wafer) of the nth wafer and the (n +/-1) th wafer.
In some possible embodiments, the calculation formula of the distance between two adjacent wafers further includes: subtracting the pulse count values of the two central positions of the two adjacent wafers, namely the absolute value of the spacing pulse count value = (the pulse count value of the central position of the nth wafer-the pulse count value of the central position of the nth ± 1 wafer) of the nth wafer and the n ± 1 wafer.
In some possible embodiments, the second range is determined by an upper position pulse count value of the first range and a lower position pulse count value of a third range,
according to the formula: the lower position pulse count value of the second range = the upper position pulse count value of the first range + the first fractional amount;
according to the formula: the upper position pulse count value of the second range = the lower position pulse count value of the third range — the second fractional amount;
the pulse count value of the first micro-scale and the pulse count value of the second micro-scale are both more than or equal to 10, and the upper position pulse count value in the second range minus the lower position pulse count value in the second range is more than or equal to 20;
or the like, or, alternatively,
the determination of the second range simultaneously satisfies the following condition:
the upper position pulse count value of the second range = the upper position pulse count value of the first range + the second fractional amount; the lower position pulse count value of the second range = the upper position pulse count value of the first range + the first decrement;
the value range of the first micro-scale is as follows: the first shrinkage is more than or equal to 10 and less than or equal to 50, and the value range of the second shrinkage is as follows: the second shrinkage is more than or equal to 30 and less than or equal to 150;
the lower position pulse count value of the third range-the upper position pulse count value of the second range is not less than 10; the upper position pulse count value of the second range-the lower position pulse count value of the second range is ≧ 20.
In some possible embodiments, the "determining the presence or absence of the wafer and the laminated wafer in the wafer groove between the first range and the third range" specifically includes:
when the movement position of the sensor is in a first range and a third range, if the sensor signal is not changed, judging that no wafer exists in the first range and the third range; if the sensor signal changes, judging that wafers exist in the first range and the third range, comparing the current wafer thickness pulse count value obtained through pulse counting with the maximum value and the minimum value of the wafer thickness pulse count values in the N wafers to judge whether the wafers are single wafers or laminated wafers, wherein the specific judging mode is as follows: if the current wafer thickness pulse count value is larger than the maximum value of the wafer thickness pulse count values in the N wafers, judging the wafer to be a laminated wafer; and if the current wafer thickness pulse count value is within the range of the maximum value and the minimum value of the wafer thickness pulse count values in the N wafers, judging the wafer to be a single wafer.
In some possible embodiments, the "determining whether there is a bevel wafer in the wafer slot between the first range and the third range" specifically includes:
when the movement position of the sensor is in the second range, if the signal of the sensor is not changed, judging that no wafer with inclined slices exists between the first range and the third range; and if the sensor signal changes, counting pulses, and judging that the wafer with the inclined slices is arranged between the first range and the third range.
In a third aspect of the present invention, a computer storage medium is provided, and a computer program is stored on the computer readable storage medium, and when being executed by a processor, the computer program implements the steps of the wafer state detection method or the wafer state detection system.
In a fourth aspect of the present invention, a detection apparatus is provided, where the detection apparatus includes the wafer state detection system.
The invention has the beneficial effects that: sequentially dividing a first range, a second range and a third range from bottom to top in a region between two adjacent groups of wafer grooves in the wafer loading box; scanning the first range, the second range and the third range in sequence through vertical up-and-down movement of the sensor, and judging the position distribution of the wafer in the wafer loading box according to whether the signal of the sensor changes; the first range and the third range are scanned to judge whether wafers and laminated wafers exist in the wafer groove between the first range and the third range, and the second range is scanned to judge whether inclined wafers exist in the wafer groove between the first range and the third range. According to the change of the signal and the wafer thickness pulse count value, the distribution states of the wafer, the laminated wafer and the inclined wafer in the wafer groove can be accurately judged, and the damage of the wafer and equipment caused by judgment errors is prevented; according to the invention, different wafer states are judged through the first range, the second range and the third range, and compared with the prior art that whether wafers, laminated sheets or inclined sheets exist or not is judged only through detecting the shielding duration of the sensor, the calculation amount of stored data is reduced, the calculation time is shortened, and the wafer transmission efficiency is improved.
Drawings
FIG. 1 is a schematic view of a wafer cassette according to an embodiment of the present invention;
FIG. 2 is a flowchart illustrating the steps for determining a first range in an embodiment of the present invention;
FIG. 3 is a flowchart illustrating the steps for determining a third range in an embodiment of the present invention;
FIG. 4 is a schematic diagram illustrating a left tilted state of a wafer with a tilted plate according to an embodiment of the present invention;
FIG. 5 is a schematic diagram illustrating a right-angled state of a bevel wafer according to an embodiment of the present invention;
fig. 6 is a schematic structural diagram of a position of a correlation sensor in an embodiment of the invention.
Detailed Description
The following detailed description of the preferred embodiments of the present invention, taken in conjunction with the accompanying drawings, will make the advantages and features of the invention easier to understand by those skilled in the art, and thus will clearly and clearly define the scope of the invention.
The technical problems solved by the invention are as follows: the safe access and transportation of the wafer is a very important technical index of a large production line of the integrated circuit, in the production process, the times of wafer transmission, wafer placement and wafer taking required by each production process are many, and the wafer breakage rate caused by transportation equipment is usually required to be less than one ten-thousandth, so that the requirements on the safety and reliability of the wafer transmission, the wafer placement and the wafer taking are higher.
However, when the robot is used to pick and place the wafer, especially when the wafer is in a protruding state or in a stacked, inclined or non-stacked state on the wafer cassette due to thermal deformation caused by the wafer during the transportation or thermal treatment process, the wafer or the device is damaged due to collision, which results in irreparable loss.
Referring to fig. 1, the present invention provides an embodiment to solve the above technical problem, and the embodiment provides a wafer state detection method, including the following steps:
the method comprises the following steps: dividing a region between two adjacent groups of wafer grooves in the wafer loading box into a first range, a second range and a third range from bottom to top in sequence;
step two: scanning the first range, the second range and the third range in sequence through vertical up-and-down movement of the sensor, and judging the position distribution of the wafer in the wafer loading box according to whether the signal of the sensor changes;
the first range and the third range are scanned to judge whether wafers and laminated wafers exist in the wafer groove between the first range and the third range, and the second range is scanned to judge whether inclined wafers exist in the wafer groove between the first range and the third range.
In the method for detecting a wafer state provided in this embodiment, a region (including a region in two sets of wafer slots) between two adjacent sets of wafer slots in a wafer loading cassette is sequentially divided into a first range, a second range and a third range from bottom to top; scanning the first range, the second range and the third range in sequence through vertical up-and-down movement of the sensor, and judging the position distribution of the wafer in the wafer loading box according to whether the signal of the sensor changes; the first range and the third range are scanned to judge whether wafers and laminated wafers exist in the wafer groove between the first range and the third range, and the second range is scanned to judge whether inclined wafers exist in the wafer groove between the first range and the third range. According to the change of the signal and the pulse count value of the thickness of the wafer, the distribution states of the wafer, the laminated wafer and the inclined wafer in the wafer groove can be accurately judged, and the damage of the wafer and equipment caused by the judgment error of a manipulator is prevented; according to the invention, different wafer states are judged through the first range, the second range and the third range, and compared with the prior art that whether wafers, laminated sheets or inclined sheets exist or not is judged only through detecting the shielding duration of the sensor, the calculation amount of stored data is reduced, the calculation time is shortened, and the wafer transmission efficiency is improved.
On the basis of the above embodiment, the determining of the first range by the upper position pulse count value of the first range and the lower position pulse count value of the first range is specifically performed with reference to fig. 1 and fig. 2, and includes the following steps:
s1, sequentially placing N wafers into the wafer loading box, and carrying out scanning test on the wafers in the wafer loading box through a sensor, wherein 25 wafers are taken out;
s2, when the sensor blocks the lower surface of the current first wafer, a lower surface position pulse value is stored through a rising edge, when the sensor leaves the upper surface of the current first wafer, an upper surface position pulse value is stored through a falling edge, the first wafer thickness pulse count value is calculated,
according to the formula: a first wafer thickness pulse count value = (upper surface position pulse numerical value of first wafer-lower surface position pulse numerical value of first wafer) absolute value;
s3, calculating the thickness pulse count value of each wafer in the remaining N-1 wafers according to S1 and S2 in sequence, adding the thickness pulse count values of each wafer in 25 wafers, and dividing by N to obtain the average thickness pulse count value of each wafer in the N wafers;
s4, calculating the pulse count value of the center position of the first wafer according to the formula: the pulse count value of the center position of the first wafer = (the pulse count value of the upper surface of the first wafer + the pulse count value of the lower surface of the first wafer)/2;
s5, determining an upper position pulse count value of a first range and a lower position pulse count value of the first range;
according to the formula: the upper position pulse count value in the first range = the pulse count value at the center of the first wafer +1.5 × N wafers, the pulse count average value of the thickness of each wafer + the redundancy value; according to the formula: the lower position pulse count value of the first range = first wafer center position pulse count value-1.5 × N wafers thickness pulse count average-redundancy value.
On the basis of the foregoing embodiment, the determining the third range by using the upper position pulse count value of the third range and the lower position pulse count value of the third range specifically includes the following steps, referring to fig. 3:
s1, when the sensor shields the lower surface of the current second wafer, a lower surface position pulse value is stored through a rising edge, when the sensor leaves the upper surface of the current second wafer, an upper surface position pulse value is stored through a falling edge, the thickness pulse count value of the second wafer is calculated,
according to the formula: a second wafer thickness pulse count value = (second wafer upper surface position pulse value-second wafer lower surface position pulse value) absolute value;
s2, calculating the pulse count value of the central position of the second wafer according to the formula: the pulse count value of the central position of the second wafer = (the pulse count value of the upper surface of the second wafer + the pulse count value of the lower surface of the second wafer)/2;
s3, determining an upper position pulse count value of a third range and a lower position pulse count value of the third range;
according to the formula: the upper position pulse count value in the third range = the pulse count value at the center position of the second wafer +1.5 × N wafers, the pulse count average value of the thickness of each wafer + the redundancy value; according to the formula: the lower position pulse count value of the third range = the pulse count value at the central position of the second wafer-1.5 × N wafers, the average value of the pulse count of the thickness of each wafer-redundancy value;
the determination process of the redundancy value is as follows: the data obtained through a plurality of times of scanning can calculate the minimum value and the maximum value of the interval pulse counting value of two adjacent wafers, and the redundancy value can be obtained by subtracting the minimum value from the maximum value.
The method for calculating the distance between two adjacent wafers comprises the following three methods:
1. subtracting the pulse values of the two upper surface positions of the two adjacent wafers, namely the absolute value of the spacing pulse count value = (the pulse value of the upper surface position of the first wafer-the pulse value of the upper surface position of the second wafer) of the first wafer and the second wafer.
2. Subtracting the pulse values of the two lower surface positions of the two adjacent wafers, namely the absolute value of the spacing pulse count value = (the pulse value of the lower surface position of the first wafer-the pulse value of the lower surface position of the second wafer) of the first wafer and the second wafer.
3. Subtracting the pulse count values of the two central positions of the two adjacent wafers, namely the absolute value of the spacing pulse count value = (the pulse count value of the central position of the first wafer-the pulse count value of the central position of the second wafer) of the first wafer and the second wafer.
The redundancy value is used for being compatible with the thickness error of the same type of wafers and the processing error of the wafer Slot in the wafer loading box. Through setting up redundancy value, can reduce the wafer and cause detection error when taking place tiny deformations such as warpage, unsmooth to and detection device's measurement accuracy brings measurement error, improved the measuring precision.
On the basis of the above-described embodiment, the second range is determined by the upper position pulse count values of the first range and the lower position pulse count values of the third range,
according to the formula: the lower position pulse count value of the second range = the upper position pulse count value of the first range + the first fractional amount;
according to the formula: the upper position pulse count value of the second range = the lower position pulse count value of the third range — the second fractional amount;
the pulse count value of the first scale and the pulse count value of the second scale are both greater than or equal to 10, and the upper position pulse count value in the second range minus the lower position pulse count value in the second range is greater than or equal to 20.
In another embodiment, the second range is determined while satisfying the following condition:
the upper position pulse count value of the second range = the upper position pulse count value of the first range + the second fractional amount; the lower position pulse count value of the second range = the upper position pulse count value of the first range + the first fractional amount;
the value range of the first micro-scale is as follows: the first shrinkage is more than or equal to 10 and less than or equal to 50, and the value range of the second shrinkage is as follows: the second shrinkage is more than or equal to 30 and less than or equal to 150;
the lower position pulse count value of the third range-the upper position pulse count value of the second range is not less than 10; the upper position pulse count value of the second range-the lower position pulse count value of the second range is ≧ 20.
The purpose of setting the minification is to better isolate different judgment ranges, ensure that the second range is between the position on the first range and the position under the third range, and prevent the interference between data, wherein the interference between data refers to: assuming that the range value of the first range is 0-10, the minimum value of the range value of the second range cannot be less than 10, otherwise the first range interferes with the second range.
The second range is only used to determine whether there is a wafer with a bevel wafer in the wafer slot between the first range and the third range, and as shown in fig. 1, the second range is between the first range and the third range, and the range value of the real second range is not the upper position pulse count value next to the first range and the lower position pulse count value next to the third range in the figure. The actual range value of the second range is further scaled between the upper position pulse count value of the first range and the lower position pulse count value of the third range, for example: the first reduction is preferably 40 and the second reduction is preferably 120, then under the above conditions:
the lower position pulse count value of the second range = the upper position pulse count value of the first range + the first decrement 40;
the upper position pulse count value of the second range = the upper position pulse count value of the first range + the second decrement 120;
the range value of the second range = the absolute value of the difference between the upper position pulse count value of the second range and the lower position pulse count value of the second range, whereby it can be derived that the range value of the second range is 80.
Scanning the first range, the second range and the third range in the wafer loading box in sequence through the vertical up-down uniform motion of the sensor, and judging the position distribution of the wafer in the wafer loading box according to whether the signal of the sensor changes;
the first range and the third range are scanned to judge whether wafers and laminated wafers exist in the wafer groove between the first range and the third range, and the second range is scanned to judge whether inclined wafers exist in the wafer groove between the first range and the third range.
The step of judging whether wafers and laminated wafers exist or not in the wafer grooves between the first range and the third range specifically comprises the following steps:
when the movement position of the sensor is in a first range and a third range, if the sensor signal is not changed, judging that no wafer exists in the first range and the third range; if the sensor signal changes, judging that wafers exist in the first range and the third range, comparing the current wafer thickness pulse count value obtained through pulse counting with the maximum value and the minimum value of the wafer thickness pulse count values in the N wafers to judge whether the wafers are single wafers or laminated wafers, wherein the specific judging mode is as follows: if the current wafer thickness pulse count value is larger than the maximum value of the wafer thickness pulse count values in 25 wafers, judging the wafer to be a laminated wafer; and if the current wafer thickness pulse count value is within the range of the maximum value and the minimum value of the wafer thickness pulse count values in the N wafers, judging the wafer to be a single wafer.
This is because the wafer has a thickness error, and the thickness of the wafer may be greater than or less than the average value of the pulse count per wafer thickness in the N wafers, i.e., the thickness of the wafer is between the maximum value and the minimum value of the pulse count per wafer thickness in the N wafers. The current wafer thickness pulse count value can only be compared to the (range of minimum and maximum values) of the wafer thickness pulse count values in the N wafers.
The test data of the wafer with or without wafer and the laminated wafer in the wafer slot between the first range and the third range are shown in table one,
table one: test data for wafer presence, absence and laminated wafer in wafer slot between the first range and the third range
According to the first table, it can be observed that the counting sizes of the single wafer and the laminated wafer are obviously different, because the wafer thickness pulse counting values of the single wafer and the laminated wafer are different, the shielding time of the sensor is different, and the pulse counting is different. The above data size is counted by a system internal counter, and is not related to the slice thickness, and the counting value of the system counter is related to the slice thickness value obtained by the pulse position in two counting modes, and the two values are not related to each other.
The step of judging whether the wafer with the inclined plate exists or not in the wafer groove between the first range and the third range specifically comprises the following steps:
when the movement position of the sensor is in the second range, if the signal of the sensor is not changed, judging that no wafer with inclined slices exists between the first range and the third range; and if the sensor signal changes, counting pulses, judging that a wafer with a bevel sheet exists between the first range and the third range, and when the wafer with the bevel sheet exists between the first range and the third range, taking the signal change and the counting in the second range as the highest priority, clearing the counting and judging results in the first range and the third range, and setting the wafer Slot in the first range and the wafer Slot in the third range as the bevel sheet state.
The counting size of the second range has no practical significance, and as long as signals change in the second range, the wafer with the inclined slices between the first range and the third range can be judged; the purpose of the counting is for the detection of the judgment of stability. The test data for determining the presence or absence of the wafer with the inclined plate in the wafer slot between the first range and the third range is shown in the second table. Referring to fig. 4 and 5, the bevel-blade wafer is divided into a left bevel and a right bevel according to a distribution state.
Table two: test data for wafer with or without bevel wafer in wafer slot between the first range and the third range
As can be seen from the test data in Table two, the data for the left skew and the right skew are substantially equal. The above data size is counted by a system internal counter, and is not related to the slice thickness, and the counting value of the system counter is related to the slice thickness value obtained by the pulse position in two counting modes, and the two values are not related to each other.
Referring to fig. 6, the sensor is a correlation sensor, and the sensor is installed in such a way that the emitting end and the receiving end are horizontally installed on the sensor bracket, so that the light from the emitting end can reach the receiving end in the horizontal direction. The transmitting end and the receiving end move up and down in the same direction and at the same speed.
The present embodiment further provides a wafer state detection system, wherein the wafer state detection method is executed when the system runs, and the wafer state detection system includes:
a sensor: the wafer loading box is arranged on the sensor bracket, scans the wafer loading box in real time through vertical up-and-down uniform motion and generates pulse signals, and a first range, a second range and a third range are sequentially divided in a region between two adjacent groups of wafer grooves (including regions in the two groups of wafer grooves) in the wafer loading box from bottom to top; the first range, the second range and the third range are determined as described in the wafer status inspection method in the above embodiment.
A first judgment module: judging whether wafers and laminated wafers exist or not in the wafer grooves between the first range and the third range, and specifically:
when the movement position of the sensor is in a first range and a third range, if the sensor signal is not changed, judging that no wafer exists in the first range and the third range; if the sensor signal changes, judging that wafers exist in the first range and the third range, comparing the current wafer thickness pulse count value obtained by pulse counting with the maximum value and the minimum value of the wafer thickness pulse count values in N wafers, and judging whether the wafers are single wafers or laminated wafers, wherein the specific judging mode is as follows: if the current wafer thickness pulse count value is larger than the maximum value of the wafer thickness pulse count values in the N wafers, judging that the wafer is a laminated wafer; and if the current wafer thickness pulse count value is within the range of the maximum value and the minimum value of the wafer thickness pulse count values in the N wafers, judging the wafer to be a single wafer.
A second judging module: judging whether the wafer with the inclined plate exists or not in the wafer groove between the first range and the third range, which comprises the following steps:
when the movement position of the sensor is in the second range, if the signal of the sensor is not changed, judging that no wafer with inclined slices exists between the first range and the third range; and if the sensor signal changes, counting pulses, and judging that the wafer with the inclined slices is arranged between the first range and the third range.
The present embodiment also provides a computer storage medium, wherein the computer storage medium stores a computer program, and the computer program, when executed by a processor, implements the steps of the wafer state detection method or executes the wafer state detection system.
The storage medium stores program instructions capable of implementing all the methods described above, wherein the program instructions may be stored in the storage medium in the form of a software product, and include instructions for causing a computer device (which may be a personal computer, a server, a network device, or the like) or a processor (processor) to execute all or part of the steps of the methods according to the embodiments of the present invention. And the aforementioned storage medium includes: various media capable of storing program codes, such as a usb disk, a mobile hard disk, a Read-Only Memory (ROM), a Random Access Memory (RAM), a magnetic disk or an optical disk, or terminal devices, such as a computer, a server, a mobile phone, and a tablet.
The processor may also be referred to as a CPU (Central Processing Unit). The processor may be an integrated circuit chip having signal processing capabilities. The processor may be:
DSP (Digital Signal Processor, DSP is a Processor composed of large-scale or super-large-scale integrated circuit chips and used for completing certain Signal processing task, it is gradually developed for adapting to the need of high-speed real-time Signal processing task
An ASIC (Application Specific Integrated Circuit) refers to an Integrated Circuit designed and manufactured according to the requirements of a Specific user and the requirements of a Specific electronic system.
An FPGA (Field Programmable Gate Array) is a product of further development based on Programmable devices such as PAL (Programmable Array Logic) and GAL (generic Array Logic). The circuit is a semi-custom circuit in the field of Application Specific Integrated Circuits (ASIC), not only overcomes the defects of the custom circuit, but also overcomes the defect that the number of gate circuits of the original programmable device is limited.
A general purpose processor, which may be a microprocessor or the processor may be any conventional processor or the like.
Other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components, and the like.
The embodiment also provides a detection device, which comprises the wafer state detection system, wherein the steps of the wafer state detection method are realized when the wafer state detection system operates.
The above embodiments are merely illustrative of the technical concepts and features of the present invention, and the present invention is not limited to the embodiments, which should be construed as limiting the scope of the present invention
Changes and modifications are also intended to be included within the scope of the present invention.
Claims (16)
1. The wafer state detection method is characterized by comprising the following steps:
dividing a region between two adjacent groups of wafer grooves in the wafer loading box into a first range, a second range and a third range from bottom to top in sequence;
the first range is determined by an upper position pulse count value of the first range and a lower position pulse count value of the first range; the third range is determined by an upper position pulse count value of the third range and a lower position pulse count value of the third range; the second range is determined by an upper position pulse count value of the first range and a lower position pulse count value of a third range, wherein the lower position of the second range and the upper position of the first range do not overlap, and the upper position of the second range and the lower position of the third range do not overlap;
scanning the first range, the second range and the third range in sequence through vertical up-and-down movement of the sensor, and judging the position distribution of the wafer in the wafer loading box according to whether the signal of the sensor changes, wherein the scanning of the first range and the third range is used for judging whether the wafer and the laminated wafer exist in the wafer groove between the first range and the third range, and the scanning of the second range is used for judging whether the wafer with the inclined piece exists in the wafer groove between the first range and the third range;
the determination of the existence or non-existence of the wafer and the laminated wafer in the wafer groove between the first range and the third range is as follows: when the movement position of the sensor is in a first range and a third range, if the sensor signal is not changed, judging that no wafer exists in the first range and the third range; if the sensor signal changes, judging that wafers exist in the first range and the third range, comparing the current wafer thickness pulse count value obtained through pulse counting with the maximum value and the minimum value of the wafer thickness pulse count values in the N wafers to judge whether the wafers are single wafers or laminated wafers, wherein the specific judging mode is as follows: if the current wafer thickness pulse count value is larger than the maximum value of the wafer thickness pulse count values in the N wafers, judging the wafer to be a laminated wafer; if the current wafer thickness pulse count value is within the range of the maximum value and the minimum value of the wafer thickness pulse count values in the N wafers, judging the wafer to be a single wafer;
the scanning of the second range is used for judging whether the wafer with the inclined plate or not in the wafer groove between the first range and the third range specifically as follows: when the movement position of the sensor is in the second range, if the sensor signal is not changed, judging that no wafer with inclined slices exists between the first range and the third range; and if the sensor signal changes, counting pulses, and judging that the wafer with the inclined slices is arranged between the first range and the third range.
2. A wafer state detection method according to claim 1, wherein the first range is determined by an upper position pulse count value of the first range and a lower position pulse count value of the first range, and the method specifically comprises the following steps:
s1, sequentially placing N wafers into a wafer loading box, and carrying out scanning test on the wafers in the wafer loading box through a sensor;
s2, when the sensor blocks the lower surface of the current nth wafer, a lower surface position pulse value is stored through a rising edge, when the sensor leaves the upper surface of the current nth wafer, an upper surface position pulse value is stored through a falling edge, the thickness pulse count value of the nth wafer is calculated,
according to the formula: the absolute value of the thickness pulse count value of the nth wafer = (the pulse value of the upper surface position of the nth wafer-the pulse value of the lower surface position of the nth wafer);
s3, calculating the thickness pulse count value of each wafer in the remaining N-1 wafers in sequence according to S1 and S2, adding the thickness pulse count values of each wafer in the N wafers, and dividing by N to obtain the average thickness pulse count value of each wafer in the N wafers;
s4, calculating the pulse count value of the center position of the nth wafer according to the formula: the pulse count value of the center position of the nth wafer is = (the pulse count value of the upper surface of the nth wafer plus the pulse count value of the lower surface of the nth wafer)/2;
s5, determining an upper position pulse count value of a first range and a lower position pulse count value of the first range;
according to the formula: the upper position pulse count value in the first range = the pulse count value at the center of the nth wafer +1.5 × N wafers, and the pulse count average value of the thickness of each wafer + the redundancy value; according to the formula: the lower position pulse count value of the first range = center position pulse count value of the nth wafer-1.5 × average value of thickness pulse count per wafer in the N wafers-redundancy value.
3. A wafer state detection method according to claim 2, wherein the third range is determined by an upper position pulse count value of the third range and a lower position pulse count value of the third range, and the method specifically comprises the following steps:
s1, when the sensor blocks the lower surface of the current n + -1 wafer, a lower surface position pulse value is stored through the rising edge, when the sensor leaves the upper surface of the current n + -1 wafer, an upper surface position pulse value is stored through the falling edge, the thickness pulse count value of the n + -1 wafer is calculated,
according to the formula: the absolute value of the pulse count value of the thickness of the nth +/-1 wafer = (the pulse value of the upper surface position of the nth +/-1 wafer-the pulse value of the lower surface position of the nth +/-1 wafer);
s2, calculating the pulse count value of the center position of the nth +/-1 wafer according to the formula: the pulse count value of the center position of the nth +/-1 wafer is = (the pulse count value of the upper surface of the nth +/-1 wafer plus the pulse count value of the lower surface of the nth +/-1 wafer)/2;
s3, determining an upper position pulse count value of a third range and a lower position pulse count value of the third range;
according to the formula: the upper position pulse count value of the third range = the pulse count value at the center position of the nth ± 1 wafer +1.5 × N wafers, the pulse count average value of the thickness of each wafer + the redundancy value; according to the formula: the lower position pulse count value of the third range = N ± 1 wafer center position pulse count value-1.5 × N wafers thickness pulse count average-redundancy value.
4. The wafer state detection method as claimed in claim 3, wherein the determination of the redundancy value is as follows: the method comprises the steps that a sensor scans and tests a wafer loading box for a plurality of times, the minimum value and the maximum value of the interval pulse counting values of two adjacent wafers are calculated, and the minimum value is subtracted from the maximum value to obtain a redundancy value;
the calculation formula of the distance between the two adjacent wafers comprises the following steps: subtracting the pulse values of the two upper surface positions of the two adjacent wafers, namely the absolute value of the spacing pulse count value = (the pulse value of the upper surface position of the nth wafer-the pulse value of the upper surface position of the nth +/-1 wafer) of the nth wafer and the n +/-1 wafer.
5. The method as claimed in claim 4, wherein the calculation formula of the distance between two adjacent wafers further comprises: subtracting the pulse values of the two lower surface positions of the two adjacent wafers, namely the absolute value of the spacing pulse count value = (the pulse value of the lower surface position of the nth wafer-the pulse value of the lower surface position of the nth +/-1 wafer) of the nth wafer and the (n +/-1) th wafer.
6. The method as claimed in claim 4, wherein the calculation formula of the distance between two adjacent wafers further comprises: subtracting the pulse count values of the two central positions of the two adjacent wafers, namely the absolute value of the spacing pulse count value = (the pulse count value of the central position of the nth wafer-the pulse count value of the central position of the nth ± 1 wafer) of the nth wafer and the n ± 1 wafer.
7. The wafer condition detecting method according to claim 3,
the second range is determined by the upper position pulse count value of the first range and the lower position pulse count value of the third range,
according to the formula: the lower position pulse count value of the second range = the upper position pulse count value of the first range + the first fractional amount;
according to the formula: the upper position pulse count value of the second range = the lower position pulse count value of the third range — the second fractional amount;
the pulse count value of the first micro-scale and the pulse count value of the second micro-scale are both more than or equal to 10, and the upper position pulse count value in the second range minus the lower position pulse count value in the second range is more than or equal to 20;
or the like, or, alternatively,
the determination of the second range simultaneously satisfies the following condition:
the upper position pulse count value of the second range = the upper position pulse count value of the first range + the second fractional amount; the lower position pulse count value of the second range = the upper position pulse count value of the first range + the first fractional amount;
the value range of the first micro-scale is as follows: the first shrinkage is more than or equal to 10 and less than or equal to 50, and the value range of the second shrinkage is as follows: the second shrinkage is more than or equal to 30 and less than or equal to 150;
the lower position pulse count value of the third range-the upper position pulse count value of the second range is not less than 10; the upper position pulse count value of the second range-the lower position pulse count value of the second range is ≧ 20.
8. The wafer state detection system is characterized by comprising
A sensor: the wafer loading box is arranged on the sensor bracket, scans the wafer loading box in real time through vertical up-and-down motion and generates pulse signals, and the region between two adjacent groups of wafer grooves in the wafer loading box is divided into a first range, a second range and a third range from bottom to top in sequence; the first range is determined by an upper position pulse count value of the first range and a lower position pulse count value of the first range; the third range is determined by an upper position pulse count value of the third range and a lower position pulse count value of the third range; the second range is determined by an upper position pulse count value of the first range and a lower position pulse count value of a third range, wherein the lower position of the second range and the upper position of the first range do not overlap, and the upper position of the second range and the lower position of the third range do not overlap;
a first judging module: judging whether wafers and laminated wafers exist or not in the wafer grooves between the first range and the third range, and specifically: when the movement position of the sensor is in a first range and a third range, if the sensor signal is not changed, judging that no wafer exists in the first range and the third range; if the sensor signal changes, judging that wafers exist in the first range and the third range, comparing the current wafer thickness pulse count value obtained through pulse counting with the maximum value and the minimum value of the wafer thickness pulse count values in the N wafers to judge whether the wafers are single wafers or laminated wafers, wherein the specific judging mode is as follows: if the current wafer thickness pulse count value is larger than the maximum value of the wafer thickness pulse count values in the N wafers, judging the wafer to be a laminated wafer; if the current wafer thickness pulse count value is within the range of the maximum value and the minimum value of the wafer thickness pulse count values in the N wafers, judging the wafer to be a single wafer;
a second judging module: judging whether the wafer with the inclined plate exists or not in the wafer groove between the first range and the third range, which comprises the following steps: when the movement position of the sensor is in the second range, if the sensor signal is not changed, judging that no wafer with inclined slices exists between the first range and the third range; and if the sensor signal changes, counting pulses, and judging that the wafer with the inclined slices is arranged between the first range and the third range.
9. The wafer state detection system of claim 8, wherein the first range is determined by an upper position pulse count value of the first range and a lower position pulse count value of the first range, comprising:
s1, sequentially placing N wafers into a wafer loading box, and carrying out scanning test on the wafers in the wafer loading box through a sensor;
s2, when the sensor blocks the lower surface of the current nth wafer, a lower surface position pulse value is stored through a rising edge, when the sensor leaves the upper surface of the current nth wafer, an upper surface position pulse value is stored through a falling edge, the thickness pulse count value of the nth wafer is calculated,
according to the formula: the absolute value of the thickness pulse count value of the nth wafer = (the pulse value of the upper surface position of the nth wafer-the pulse value of the lower surface position of the nth wafer);
s3, calculating the thickness pulse count value of each wafer in the remaining N-1 wafers in sequence according to S1 and S2, adding the thickness pulse count values of each wafer in the N wafers, and dividing by N to obtain the average thickness pulse count value of each wafer in the N wafers;
s4, calculating the pulse count value of the center position of the nth wafer according to the formula: the pulse count value of the center position of the nth wafer is = (the pulse count value of the upper surface of the nth wafer plus the pulse count value of the lower surface of the nth wafer)/2;
s5, determining an upper position pulse count value of a first range and a lower position pulse count value of the first range;
according to the formula: the upper position pulse count value in the first range = the pulse count value at the center of the nth wafer +1.5 × N wafers, and the pulse count average value of the thickness of each wafer + the redundancy value; according to the formula: the lower position pulse count value of the first range = center position pulse count value of the nth wafer-1.5 × average value of thickness pulse count per wafer in the N wafers-redundancy value.
10. The wafer state detection system of claim 9, wherein the third range is determined by an upper position pulse count value of the third range and a lower position pulse count value of the third range, comprising:
s1, when the sensor blocks the lower surface of the current n + -1 wafer, a lower surface position pulse value is stored through the rising edge, when the sensor leaves the upper surface of the current n + -1 wafer, an upper surface position pulse value is stored through the falling edge, the thickness pulse count value of the n + -1 wafer is calculated,
according to the formula: the absolute value of the pulse count value of the thickness of the nth +/-1 wafer = (the pulse value of the upper surface position of the nth +/-1 wafer-the pulse value of the lower surface position of the nth +/-1 wafer);
s2, calculating the pulse count value of the center position of the nth +/-1 wafer according to the formula: the pulse count value of the center position of the nth +/-1 wafer is = (the pulse count value of the upper surface of the nth +/-1 wafer plus the pulse count value of the lower surface of the nth +/-1 wafer)/2;
s3, determining an upper position pulse count value of a third range and a lower position pulse count value of the third range;
according to the formula: the upper position pulse count value of the third range = the pulse count value at the center position of the nth ± 1 wafer +1.5 × N wafers, the pulse count average value of the thickness of each wafer + the redundancy value; according to the formula: the lower position pulse count value of the third range = N ± 1 wafer center position pulse count value-1.5 × N wafers thickness pulse count average-redundancy value.
11. The wafer state detection system of claim 10, wherein the redundancy value is determined as follows: the method comprises the following steps of carrying out a plurality of scanning tests on a wafer loading box by a sensor, calculating the minimum value and the maximum value of the interval pulse counting values of two adjacent wafers, and subtracting the minimum value from the maximum value to obtain a redundancy value;
the calculation formula of the distance between the two adjacent wafers comprises the following steps: subtracting the pulse values of the two upper surface positions of the two adjacent wafers, namely the absolute value of the spacing pulse count value = (the pulse value of the upper surface position of the nth wafer-the pulse value of the upper surface position of the nth +/-1 wafer) of the nth wafer and the n +/-1 wafer.
12. The wafer state detection system of claim 11, wherein the calculation formula of the distance between two adjacent wafers further comprises: subtracting the pulse values of the two lower surface positions of the two adjacent wafers, namely the absolute value of the spacing pulse count value = (the pulse value of the lower surface position of the nth wafer-the pulse value of the lower surface position of the nth +/-1 wafer) of the nth wafer and the (n +/-1) th wafer.
13. The wafer state detection system of claim 11, wherein the calculation formula of the distance between two adjacent wafers further comprises: subtracting the pulse count values of the two central positions of the two adjacent wafers, namely the absolute value of the spacing pulse count value = (the pulse count value of the central position of the nth wafer-the pulse count value of the central position of the nth ± 1 wafer) of the nth wafer and the n ± 1 wafer.
14. The wafer condition detecting system of claim 10,
the second range is determined by the upper position pulse count value of the first range and the lower position pulse count value of the third range,
according to the formula: the lower position pulse count value of the second range = the upper position pulse count value of the first range + the first fractional amount;
according to the formula: the upper position pulse count value of the second range = the lower position pulse count value of the third range — the second fractional amount;
the pulse count value of the first micro-scale and the pulse count value of the second micro-scale are both more than or equal to 10, and the upper position pulse count value in the second range minus the lower position pulse count value in the second range is more than or equal to 20;
or the like, or, alternatively,
the determination of the second range simultaneously satisfies the following condition:
the upper position pulse count value of the second range = the upper position pulse count value of the first range + the second fractional amount; the lower position pulse count value of the second range = the upper position pulse count value of the first range + the first fractional amount;
the value range of the first micro-scale is as follows: the first shrinkage is more than or equal to 10 and less than or equal to 50, and the value range of the second shrinkage is as follows: the second shrinkage is more than or equal to 30 and less than or equal to 150;
the lower position pulse count value of the third range-the upper position pulse count value of the second range is not less than 10; the upper position pulse count value of the second range-the lower position pulse count value of the second range is ≧ 20.
15. A computer storage medium, characterized in that the computer readable storage medium has stored thereon a computer program which, when being executed by a processor, implements the steps of the wafer condition inspection method according to any one of claims 1 to 7 or executes the wafer condition inspection system according to any one of claims 8 to 14.
16. A detection apparatus, characterized in that the detection apparatus comprises a wafer condition detection system according to any one of claims 8 to 14.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116659593A (en) * | 2023-08-01 | 2023-08-29 | 浙江果纳半导体技术有限公司 | Wafer storage detection method |
| CN117174625A (en) * | 2023-11-02 | 2023-12-05 | 浙江果纳半导体技术有限公司 | Wafer state detection mechanism, detection method and wafer transmission equipment |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04345049A (en) * | 1991-05-22 | 1992-12-01 | Mitsubishi Electric Corp | Wafer arrangement pattern detection equipment and its detection method |
| JPH09159422A (en) * | 1995-12-05 | 1997-06-20 | Dainippon Screen Mfg Co Ltd | Device for detecting circumferential shape of wafer |
| US6043502A (en) * | 1997-12-30 | 2000-03-28 | Samsung Electronics Co., Ltd. | Apparatus and method for sensing an insertion state of a wafer in a cassette |
| US6452201B1 (en) * | 2000-07-13 | 2002-09-17 | Industrial Technology Research Institute | Wafer-mapping method of wafer load port equipment |
| JP2006135094A (en) * | 2004-11-05 | 2006-05-25 | Toshiba Corp | Substrate detection apparatus |
| CN102903657A (en) * | 2011-07-29 | 2013-01-30 | 东京毅力科创株式会社 | Heat treatment apparatus and method of transferring substrates to the same |
| CN108107812A (en) * | 2016-11-24 | 2018-06-01 | 沈阳芯源微电子设备有限公司 | Wafer position condition checkout gear and method in wafer case based on PLC controls |
| CN111415889A (en) * | 2020-04-08 | 2020-07-14 | 上海果纳半导体技术有限公司 | Wafer state detection method and semiconductor device |
| CN112038252A (en) * | 2020-09-10 | 2020-12-04 | 无锡卓海科技有限公司 | Signal fuzzy control filter for wafer detection device |
| CN113053773A (en) * | 2019-12-26 | 2021-06-29 | 沈阳新松机器人自动化股份有限公司 | Wafer state online identification detection method, device and system |
-
2022
- 2022-08-16 CN CN202210980344.8A patent/CN115083942B/en active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04345049A (en) * | 1991-05-22 | 1992-12-01 | Mitsubishi Electric Corp | Wafer arrangement pattern detection equipment and its detection method |
| JPH09159422A (en) * | 1995-12-05 | 1997-06-20 | Dainippon Screen Mfg Co Ltd | Device for detecting circumferential shape of wafer |
| US6043502A (en) * | 1997-12-30 | 2000-03-28 | Samsung Electronics Co., Ltd. | Apparatus and method for sensing an insertion state of a wafer in a cassette |
| US6452201B1 (en) * | 2000-07-13 | 2002-09-17 | Industrial Technology Research Institute | Wafer-mapping method of wafer load port equipment |
| JP2006135094A (en) * | 2004-11-05 | 2006-05-25 | Toshiba Corp | Substrate detection apparatus |
| CN102903657A (en) * | 2011-07-29 | 2013-01-30 | 东京毅力科创株式会社 | Heat treatment apparatus and method of transferring substrates to the same |
| CN108107812A (en) * | 2016-11-24 | 2018-06-01 | 沈阳芯源微电子设备有限公司 | Wafer position condition checkout gear and method in wafer case based on PLC controls |
| CN113053773A (en) * | 2019-12-26 | 2021-06-29 | 沈阳新松机器人自动化股份有限公司 | Wafer state online identification detection method, device and system |
| CN111415889A (en) * | 2020-04-08 | 2020-07-14 | 上海果纳半导体技术有限公司 | Wafer state detection method and semiconductor device |
| CN112038252A (en) * | 2020-09-10 | 2020-12-04 | 无锡卓海科技有限公司 | Signal fuzzy control filter for wafer detection device |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116659593A (en) * | 2023-08-01 | 2023-08-29 | 浙江果纳半导体技术有限公司 | Wafer storage detection method |
| CN116659593B (en) * | 2023-08-01 | 2023-10-20 | 浙江果纳半导体技术有限公司 | Wafer storage detection method |
| CN117174625A (en) * | 2023-11-02 | 2023-12-05 | 浙江果纳半导体技术有限公司 | Wafer state detection mechanism, detection method and wafer transmission equipment |
| CN117174625B (en) * | 2023-11-02 | 2024-02-06 | 浙江果纳半导体技术有限公司 | Wafer state detection mechanism, detection method and wafer transmission equipment |
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