CN115065330A - Miniature high-power microwave amplitude limiter based on passive detection bias circuit and micro-assembly - Google Patents
Miniature high-power microwave amplitude limiter based on passive detection bias circuit and micro-assembly Download PDFInfo
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- H03G11/00—Limiting amplitude; Limiting rate of change of amplitude ; Clipping in general
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Abstract
The invention provides a micro high-power microwave amplitude limiter based on a passive detection bias circuit and a micro assembly. The invention does not need external power-up, realizes miniaturization, and greatly reduces the volume by 1 order of magnitude compared with the prior art. Compared with the prior art, the invention has the advantages that the power bearing capacity is improved by 1 order of magnitude, the power bearing capacity is high, the response speed is high, and the problems of high leakage power, high power consumption of the diode and low power bearing capacity caused by external high-power microwave injection are solved.
Description
Technical Field
The invention belongs to the technical field of electronic information, and particularly relates to a micro high-power microwave amplitude limiter based on a passive detection bias circuit and micro-assembly.
Background
The radio frequency front-end limiter designs that are widely used at present are usually based on multi-stage PIN diodes, the primary and final diodes having successively decreasing I-layer thicknesses, the thicker the I-layer, the higher the power-carrying capacity. The circuit is simple in structure, but the main problem is that the switching time from cut-off to conduction of the primary high-power PIN diode is long, when external high-power microwave injection is encountered, the leakage power is large, the power consumption of the diode is large, and the power bearing capacity is low. Therefore, it is necessary to develop a novel limiter with small size, high power endurance capability and fast response speed for high-power microwave protection.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: a micro high-power microwave amplitude limiter based on a passive detection bias circuit and a micro assembly is provided and used for protecting high-power microwaves.
The technical scheme adopted by the invention for solving the technical problems is as follows: the micro high-power microwave amplitude limiter based on the passive detection bias circuit and the micro assembly comprises a pulse amplitude limiting circuit, a self-detection driving amplitude limiting circuit and a low-power amplitude limiting circuit which are connected in series; the pulse amplitude limiting circuit comprises a first high-impedance transmission line TL1, a second high-impedance transmission line TL2 and a bidirectional TVS diode V1, wherein the first high-impedance transmission line TL1 and the second high-impedance transmission line TL2 are connected in series, one end of the bidirectional TVS diode V1 is connected with a series point of the first high-impedance transmission line TL1 and the second high-impedance transmission line TL2, and the other end of the bidirectional TVS diode V1 is grounded; the self-detection driving amplitude limiting circuit comprises a high-power amplitude limiting sub-circuit, a self-detection driving sub-circuit and a transmission line TL 3; the high-power amplitude-limiting sub-circuit comprises an input end blocking capacitor C2, a first high-power amplitude-limiting diode V3 and a second high-power amplitude-limiting diode V4; the first high-power amplitude limiting diode V3 and the second high-power amplitude limiting diode V4 are connected in parallel, one end of the parallel circuit is connected with the input end blocking capacitor C2, and the other end of the parallel circuit is grounded; the self-detection driving sub-circuit comprises a detector circuit formed by connecting a detection diode V2, a detection capacitor C1 and a matching resistor R1 in parallel, and further comprises a coupler W1 and a bias inductor L1; the coupler W1 is connected between the detection diode V2 and the detection capacitor C1, and the anodes of the first high-power limiting diode V3 and the second high-power limiting diode V4; the transmission line TL3 is connected with the anodes of the first high-power limiting diode V3 and the second high-power limiting diode V4 and the output end of the self-detection driving limiting circuit; the low-power amplitude limiting circuit comprises a middle-stage blocking capacitor C3, a final-stage amplitude limiting diode V5, an output-end blocking capacitor C4 and a follow current inductor L2; the intermediate-stage direct-current blocking capacitor C3 is connected with the output-end direct-current blocking capacitor C4 in series, and the final-stage amplitude limiting diode V5 and the follow current inductor L2 are connected between the grounding point and the series point of the intermediate-stage direct-current blocking capacitor C3 and the output-end direct-current blocking capacitor C4 in parallel; the freewheeling inductor L2 is the freewheeling path of the last clipping diode V5.
According to the scheme, the impedances of the first high-impedance transmission line TL1 and the second high-impedance transmission line TL2 are both 65 omega, the widths are both 0.25mm, and the lengths are both 0.5 mm; the bidirectional TVS diode V1 adopts a miniature packaged TVS diode with 0.62mm x 0.31mm, the self capacitance is less than 0.2pF, and the series inductance is less than 0.2 nH.
According to the scheme, the input end blocking capacitor C2 adopts a metal-nitride-silicon MNS microwave chip capacitor, the volume is 0.5mm x 0.2mm, and the metal-nitride-silicon MNS microwave chip capacitor is used for reducing high-frequency loss, reducing the volume and improving the temperature stability;
according to different used frequency bands, the input end blocking capacitor C2 selects different values:
when the frequency band of 0.1 GHz-1 GHz is used, 390pF is selected as the input end blocking capacitor C2;
when the frequency band of 1 GHz-2 GHz is used, 47pF is selected as the input end blocking capacitor C2;
when the frequency band of 2 GHz-8 GHz is used, the input end blocking capacitor C2 is 22 pF;
when the frequency band of 8 GHz-10 GHz is used, the input end blocking capacitor C2 is 18 pF;
when the frequency band of 8 GHz-18 GHz is used, the input end blocking capacitor C2 is 15 pF.
According to the scheme, the first high-power amplitude limiting diode V3 and the second high-power amplitude limiting diode V4 both adopt high-power PIN amplitude limiting diodes with the thickness of 20-30 μm of an I layer, the breakdown voltage of 200-300V, the internal resistance of 0.6 omega and the junction capacitance of not more than 0.3pF, and are used for bearing 100W continuous waves and pulse waves with the pulse width of 1000W and 20us and the duty ratio of 1 percent; the first high-power limiting diode V3 and the second high-power limiting diode V4 both adopt bare chips without external packaging, and the volume of the bare chips is 0.4mm by 0.2 mm.
According to the scheme, the circuit board further comprises a substrate used as a carrier of the circuit; the substrate is an AlN ceramic substrate and comprises a surface metal layer, an intermediate medium layer and a bottom metal layer; the thickness of the surface metal layer is 100-150 μm, and the material is copper; the thickness of the middle dielectric layer is 508 μm, and the material is aluminum nitride; the thickness of the bottom metal layer is 100-150 μm, and the material is copper; the surface metal layer and the bottom metal layer are electrically connected by adopting a solid metal through hole, the height of the through hole is consistent with the thickness of the substrate, and the diameter is 350-400 mu m.
Furthermore, a high-voltage electrode at the top of the input end blocking capacitor C2 is interconnected with anodes at the tops of the first high-power amplitude limiting diode V3 and the second high-power amplitude limiting diode V4 by a bonding gold band with the width of 100-150 mu m and the thickness of 10-15 mu m; the anodes of the first high-power amplitude limiting diode V3 and the second high-power amplitude limiting diode V4 are interconnected with the transmission line TL3 by adopting a bonding gold band with the width of 100-150 mu m and the thickness of 10-15 mu m; the low-voltage electrode at the bottom of the input end blocking capacitor C2 is welded at the tail end of the second high-impedance transmission line TL 2; cathodes at the bottoms of the first high-power amplitude limiting diode V3 and the second high-power amplitude limiting diode V4 are welded on a surface metal layer of the substrate by conductive silver paste for grounding.
Furthermore, the detection efficiency of the detector circuit is 40% -58%; the detector diode V2 adopts a zero-bias detector diode bare chip without external packaging and with 5 parallel Schottky junctions, and the size is 0.35mm by 0.15 mm; the capacitance value of the detection capacitor C1 is 27 pF; the matching resistor R1 is equivalent to the internal resistance of a power supply, and the resistance value is 220 omega; the cathode at the bottom of the detection diode V2 and the low-voltage electrode at the bottom of the detection capacitor C1 are welded on the ground metal layer on the surface of the substrate by conductive silver paste; the linear distance from the detection diode V2 to the detection capacitor C1 on the substrate is 0.9 mm-1.2 mm, and 2-4 bonding wires with the diameter of 20 mu m are used for interconnection from the detection diode V2 to the detection capacitor C1; the coupler W1 comprises a gold bonding wire between the detection diode V2 and the detection capacitor C1, a gold bonding strip of the anodes of the first high-power amplitude limiting diode V3 and the second high-power amplitude limiting diode V4, and is used for replacing a microstrip coupling circuit and reducing the occupied area; the coupling degree of the coupler W1 is 15 dB; the bias inductor L1 adopts a hollow spiral inductor; the bias inductance L1 is selected to have different values according to the frequency band used:
when the frequency band of 0.1 GHz-1 GHz is used, 680nH is selected as the bias inductor L1;
when a frequency band of 1-2 GHz is used, 68nH is selected as the offset inductor L1;
when a frequency band of 2-8 GHz is used, 47nH is selected as the bias inductor L1;
when the frequency band of 8-10 GHz is used, 27nH is selected as the offset inductor L1;
when the frequency band of 8-18 GHz is used, 22nH is selected as the offset inductor L1.
According to the scheme, the middle-stage blocking capacitor C3 and the output-end blocking capacitor C4 adopt metal-nitride-silicon MNS microwave chip capacitors, the size of the capacitors is 0.5mm x 0.2mm, and the capacitors are used for reducing high-frequency loss, reducing the size and providing temperature stability; the last-stage amplitude limiting diode V5 adopts a high-power PIN amplitude limiting diode with the thickness of 2-5 mu m, the breakdown voltage of 20-50V and the junction capacitance of less than 0.3pF, and adopts a bare chip without external packaging, and the volume of the bare chip is 0.4mm by 0.2 mm; the freewheeling inductor L2 is a spiral planar inductor fabricated by photolithography and thin film processes, with inductance of 20 nH-100 nH and size of 1.1mm 0.3 mm.
A micro high-power microwave amplitude limiting method based on a passive detection bias circuit and micro-assembly comprises the following steps:
s1: after a high-power radio-frequency signal enters the pulse amplitude limiting circuit from the input end, firstly, the high-power radio-frequency signal is subjected to amplitude limiting through a bidirectional TVS diode V1;
s2: then the radio frequency signal is coupled to a detector circuit by a coupler W1 of the self-detection driving amplitude limiting circuit;
s3: a voltage signal detected by the detector circuit is added to the first high-power amplitude limiting diode V3 and the second high-power amplitude limiting diode V4 through a bias inductor L1, so that the first high-power amplitude limiting diode V3 and the second high-power amplitude limiting diode V4 are conducted, and the final-stage amplitude limiting diode V5 is protected.
The beneficial effects of the invention are as follows:
1. according to the micro high-power microwave amplitude limiter based on the passive detection bias circuit and the micro assembly, the self-detection circuit drives the switching diode so as to conduct the switching diode, the purpose of amplitude limiting is achieved, and the function of protecting high-power microwaves is achieved.
2. The invention does not need external power-up, realizes miniaturization, and greatly reduces the volume by 1 order of magnitude compared with the prior art.
3. Compared with the prior art, the power bearing capacity of the invention is improved by 1 order of magnitude, the power bearing capacity is high, the response speed is high, and the problems of high leakage power, high power consumption of the diode and low power bearing capacity caused by external high-power microwave injection are solved.
Drawings
Fig. 1 is a circuit configuration diagram of an embodiment of the present invention.
Fig. 2 is a circuit schematic of an embodiment of the invention.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and specific embodiments.
Referring to fig. 1 and 2, the embodiment of the invention includes a pulse amplitude limiting circuit, a self-detection driving amplitude limiting circuit and a low-power amplitude limiting circuit, and is used for realizing the functions of high-power amplitude limiting and protecting a receiver circuit.
The circuit board is designed by adopting an AlN ceramic substrate, the circuit board has good heat-conducting property and is suitable for a high-power circuit, and the substrate has high dielectric constant and is suitable for miniaturization. The substrate is divided into three layers, namely a surface metal layer, a middle dielectric layer and a bottom metal layer; the thickness of the surface metal layer is 100-150 μm, and the material is copper; the thickness of the middle dielectric layer is about 508 μm, and the material is aluminum nitride; the thickness of the bottom metal layer is 100-150 μm, and the material is copper; the part needing to be electrically connected between the surface metal layer and the bottom metal layer adopts a solid metal through hole, the height of the through hole is consistent with the thickness of the substrate, and the diameter is 350-;
the pulse amplitude limiting circuit comprises high-impedance transmission lines TL1 and TL2, a bidirectional TVS diode V1; TL1 and TL2 had impedances of 65 ohms, widths of 0.25mm, and lengths of 0.5 mm; the diode V1 adopts a miniature packaged TVS diode with 0.62mm x 0.31mm, the self capacitance is less than 0.2pF, and the series inductance is less than 0.2 nH;
the self-detection driving amplitude limiting circuit comprises a high-power amplitude limiting sub-circuit, a self-detection driving sub-circuit and a transmission line TL 3;
the high-power amplitude limiting sub-circuit comprises an input end blocking capacitor C2, and 2 high-power amplitude limiting diodes V3 and V4 which are connected in parallel; the input end blocking capacitor C2 adopts a metal-nitride-silicon (MNS) microwave chip capacitor, and the volume is about 0.5mm x 0.2mm, so that low high-frequency loss, small volume and high temperature stability are realized; according to different frequency bands used by the amplitude limiter, the blocking capacitor at the input end selects different values: 390pF is selected from 0.1 to 1 GHz; selecting 47pF for 1-2 GHz; selecting 22pF at 2-8 GHz; selecting 18pF at 8-10 GHz; selecting 15pF at 8-18 GHz; the high-power amplitude limiting diode adopts a high-power PIN amplitude limiting diode with the thickness of 20-30 mu m of an I layer, the breakdown voltage of 200-300V, the internal resistance of 0.6 omega and the junction capacitance of not more than 0.3pF, and can bear 100W continuous waves and 1000W (20us pulse width and 1% duty ratio) pulse waves; the diode uses a bare chip without external packaging, and the volume is about 0.4mm 0.2 mm. A high-voltage electrode on the top of the input end blocking capacitor and an anode on the top of the high-power amplitude limiting diode are interconnected by a bonding gold band with the width of 100-150 mu m and the thickness of 10-15 mu m; the anodes of the tops V3 and V4 of the high-power amplitude limiting diodes are interconnected with the transmission line TL3 by adopting a bonding gold strip with the width of 100-; the low-voltage electrode at the bottom of the input end blocking capacitor is welded at the tail end of the transmission line TL 2; and the cathode at the bottom of the primary high-power amplitude limiting diode is welded on the ground metal layer on the surface of the substrate by utilizing conductive silver paste.
The self-detection driving sub-circuit comprises a detection diode V2, a detection capacitor C1, a matching resistor R1, a coupler W1 and a bias inductor L1; wherein the detector circuit consists of V2, C1 and R1, and the detection efficiency of the detector is 40-58%; the detector diode V2 adopts a zero-bias detector diode bare chip without external packaging and with 5 parallel Schottky junctions, and the size is about 0.35mm by 0.15 mm; the capacitance value of the detection capacitor C1 is about 27 pF; the matching resistor R1 is equivalent to the internal resistance of a power supply, and the resistance value is about 220 omega; the cathode at the bottom of the detection diode V2 and the low-voltage electrode at the bottom of the detection capacitor C1 are soldered to the ground metal layer on the surface of the substrate by conductive silver paste. The linear distance from the detection diode to the detection capacitor is 0.9-1.2 mm; 2-4 bonding gold wires with the diameter of 20 mu m are used for interconnection from the detection diode to the detection capacitor; the coupler W1 is composed of a gold bonding wire between the detection diode and the detection capacitor and a gold bonding belt at the anode of the high-power amplitude limiting diode, and replaces a generally adopted microstrip coupling circuit, so that the area occupied by the coupling circuit is greatly reduced; the coupling degree of the coupler W1 is designed to be 15 dB; the bias inductor L1 is an air-core spiral inductor, and the values are selected as follows: 680nH is selected as the frequency band inductor of 0.1-1 GHz; 68nH is selected as the frequency band inductor of 1-2 GHz; 47nH is selected as the 2-8 GHz frequency band inductor; 27nH is selected as the frequency band inductor of 8-10 GHz; 22nH is selected as the frequency band inductor of 8-18 GHz;
the low-power amplitude limiting circuit comprises a middle-stage blocking capacitor C3, a final-stage amplitude limiting diode V5, an output end blocking capacitor C4 and a follow current inductor L2; the intermediate-stage blocking capacitor C3 and the output-end blocking capacitor C4 adopt metal-nitride-silicon (MNS) microwave chip capacitors with the volume of about 0.5mm 0.2mm, so that low high-frequency loss, small volume and high temperature stability are realized; the final-stage amplitude limiting diode V5 is a high-power PIN amplitude limiting diode with the thickness of 2-5 mu m of an I layer, the breakdown voltage of 20-50V and the junction capacitance of less than 0.3 pF. The diode adopts a bare chip without external packaging, and the volume of the diode is about 0.4mm by 0.2 mm; the freewheeling inductor L2 is a spiral planar inductor fabricated by photolithography and thin film processes, with inductance of 20 nH-100 nH and size of 1.1mm 0.3 mm.
When a high-power radio-frequency signal enters from an input end, the high-power radio-frequency signal firstly passes through amplitude limiting of a bidirectional TVS diode V1, then enters a self-detection driving amplitude limiting circuit coupler W1 and is coupled with a radio-frequency signal to a detector (a detector circuit consisting of V2, C1 and R1), a voltage signal detected by the detector is added to switching diodes V3 and V4 through an inductor L1, so that the switching diodes V3 and V4 are conducted, and the rear-stage low-power amplitude limiting tube V5 is protected. L2 is the free-wheeling path of the limiter tube V5, and C2, C3 and C4 are blocking capacitors.
If the input power is 100W continuous wave, the power output to the detector by the coupler with the coupling degree of 15dB is about 3.2W, the direct current power output by the detector is about 1.28W according to the detection efficiency of 40%, and the current applied to the switch diode is about 145mA, so that the switch diode is sufficiently conducted.
If the input power is 1000W (20us pulse width, 1% duty ratio), the power coupled and output to the detector is about 0.32W, the direct current power after the detection output is 0.128W, and the current added to the switch diode is about 46mA, which is also enough to lead the switch diode to be conducted according to the detection efficiency of 40%, thereby protecting the rear-stage passive limiting tube.
The design is that the self-detection circuit drives the switch diode so as to lead the switch diode to be conducted to achieve the purpose of amplitude limiting without external power-up.
The above embodiments are only used for illustrating the design idea and features of the present invention, and the purpose of the present invention is to enable those skilled in the art to understand the content of the present invention and implement the present invention accordingly, and the protection scope of the present invention is not limited to the above embodiments. Therefore, all equivalent changes and modifications made in accordance with the principles and concepts disclosed herein are intended to be included within the scope of the present invention.
Claims (9)
1. Miniature high power microwave amplitude limiter based on passive detection bias circuit and little equipment which characterized in that: the pulse amplitude limiting circuit, the self-detection driving amplitude limiting circuit and the low-power amplitude limiting circuit are connected in series;
the pulse amplitude limiting circuit comprises a first high-impedance transmission line TL1, a second high-impedance transmission line TL2 and a bidirectional TVS diode V1, wherein the first high-impedance transmission line TL1 and the second high-impedance transmission line TL2 are connected in series, one end of the bidirectional TVS diode V1 is connected with the series point of the first high-impedance transmission line TL1 and the second high-impedance transmission line TL2, and the other end of the bidirectional TVS diode V1 is grounded;
the self-detection driving amplitude limiting circuit comprises a high-power amplitude limiting sub-circuit, a self-detection driving sub-circuit and a transmission line TL 3; the high-power amplitude-limiting sub-circuit comprises an input end blocking capacitor C2, a first high-power amplitude-limiting diode V3 and a second high-power amplitude-limiting diode V4; the first high-power amplitude limiting diode V3 and the second high-power amplitude limiting diode V4 are connected in parallel, one end of the parallel circuit is connected with the input end blocking capacitor C2, and the other end of the parallel circuit is grounded;
the self-detection driving sub-circuit comprises a detector circuit formed by connecting a detection diode V2, a detection capacitor C1 and a matching resistor R1 in parallel, and further comprises a coupler W1 and a bias inductor L1; the coupler W1 is connected between the detection diode V2 and the detection capacitor C1, and the anodes of the first high-power limiting diode V3 and the second high-power limiting diode V4; the transmission line TL3 is connected with the anodes of the first high-power limiting diode V3 and the second high-power limiting diode V4 and the output end of the self-detection driving limiting circuit;
the low-power amplitude limiting circuit comprises a middle-stage blocking capacitor C3, a final-stage amplitude limiting diode V5, an output-end blocking capacitor C4 and a follow current inductor L2; the intermediate-stage blocking capacitor C3 is connected with the output-end blocking capacitor C4 in series, and the final-stage amplitude limiting diode V5 and the freewheeling inductor L2 are connected between the grounding point and the series point of the intermediate-stage blocking capacitor C3 and the output-end blocking capacitor C4 in parallel; the freewheeling inductor L2 is the freewheeling path of the last clipping diode V5.
2. The miniature high-power microwave limiter based on the passive detection bias circuit and the micro-assembly of claim 1, wherein:
the impedance of the first high-impedance transmission line TL1 and the impedance of the second high-impedance transmission line TL2 are both 65 omega, the width of each high-impedance transmission line TL1 and the length of each high-impedance transmission line TL2 are both 0.25mm, and the lengths of each high-impedance transmission line TL1 and the length of each high-impedance transmission line TL2 are both 0.5 mm;
the bidirectional TVS diode V1 adopts a miniature packaged TVS diode with 0.62mm x 0.31mm, the self capacitance is less than 0.2pF, and the series inductance is less than 0.2 nH.
3. The micro high-power microwave limiter based on the passive detection bias circuit and the micro-assembly of claim 1, wherein:
the input end blocking capacitor C2 adopts a metal-nitride-silicon MNS microwave chip capacitor, has the volume of 0.5mm 0.2mm, and is used for reducing high-frequency loss, reducing volume and improving temperature stability;
according to different used frequency bands, the input end blocking capacitor C2 selects different values:
when the frequency band of 0.1 GHz-1 GHz is used, 390pF is selected as the input end blocking capacitor C2;
when the frequency band of 1 GHz-2 GHz is used, 47pF is selected as the input end blocking capacitor C2;
when the frequency band of 2 GHz-8 GHz is used, the input end blocking capacitor C2 is 22 pF;
when the frequency band of 8 GHz-10 GHz is used, the input end blocking capacitor C2 is 18 pF;
when the frequency band of 8 GHz-18 GHz is used, the input end blocking capacitor C2 is 15 pF.
4. The micro high-power microwave limiter based on the passive detection bias circuit and the micro-assembly of claim 1, wherein:
the first high-power amplitude limiting diode V3 and the second high-power amplitude limiting diode V4 both adopt high-power PIN amplitude limiting diodes with the thickness of an I layer being 20-30 mu m, the breakdown voltage being 200-300V, the internal resistance being 0.6 omega and the junction capacitance being not more than 0.3pF, and are used for bearing 100W continuous waves and pulse waves with the pulse width of 1000W and 20us and the duty ratio of 1 percent;
the first high-power limiting diode V3 and the second high-power limiting diode V4 both adopt bare chips without external packaging, and the volume of the bare chips is 0.4mm by 0.2 mm.
5. The micro high-power microwave limiter based on the passive detection bias circuit and the micro-assembly of claim 1, wherein: the substrate is used as a carrier of the circuit; the substrate is an AlN ceramic substrate and comprises a surface metal layer, an intermediate medium layer and a bottom metal layer; the thickness of the surface metal layer is 100-150 μm, and the material is copper; the thickness of the middle dielectric layer is 508 μm, and the material is aluminum nitride; the thickness of the bottom metal layer is 100-150 μm, and the material is copper; the surface metal layer and the bottom metal layer are electrically connected by adopting a solid metal through hole, the height of the through hole is consistent with the thickness of the substrate, and the diameter is 350-400 mu m.
6. The micro high-power microwave limiter based on the passive detection bias circuit and the micro-assembly of claim 5, wherein:
a high-voltage electrode at the top of the input end blocking capacitor C2 is interconnected with anodes at the tops of the first high-power amplitude limiting diode V3 and the second high-power amplitude limiting diode V4 by a bonding gold belt with the width of 100-150 mu m and the thickness of 10-15 mu m; the anodes of the first high-power amplitude limiting diode V3 and the second high-power amplitude limiting diode V4 are interconnected with the transmission line TL3 by adopting a bonding gold band with the width of 100-150 mu m and the thickness of 10-15 mu m; the low-voltage electrode at the bottom of the input end blocking capacitor C2 is welded at the tail end of the second high-impedance transmission line TL 2; cathodes at the bottoms of the first high-power amplitude limiting diode V3 and the second high-power amplitude limiting diode V4 are welded on a surface metal layer of the substrate by conductive silver paste for grounding.
7. The micro high-power microwave limiter based on the passive detection bias circuit and the micro-assembly of claim 5, wherein:
the detection efficiency of the detector circuit is 40-58%; the detector diode V2 adopts a zero-bias detector diode bare chip without external packaging and with 5 parallel Schottky junctions, and the size is 0.35mm by 0.15 mm; the capacitance value of the detection capacitor C1 is 27 pF; the matching resistor R1 is equivalent to the internal resistance of a power supply, and the resistance value is 220 omega; the cathode at the bottom of the detection diode V2 and the low-voltage electrode at the bottom of the detection capacitor C1 are welded on the ground metal layer on the surface of the substrate by conductive silver paste; the linear distance from the detection diode V2 to the detection capacitor C1 on the substrate is 0.9 mm-1.2 mm, and 2-4 bonding wires with the diameter of 20 mu m are used for interconnection from the detection diode V2 to the detection capacitor C1;
the coupler W1 comprises a gold bonding wire between the detection diode V2 and the detection capacitor C1, a gold bonding strip of anodes of a first high-power amplitude limiting diode V3 and a second high-power amplitude limiting diode V4, and is used for replacing a micro-strip coupling circuit and reducing the occupied area; the coupling degree of the coupler W1 is 15 dB;
the bias inductor L1 adopts a hollow spiral inductor; the bias inductance L1 is selected to have different values according to the frequency band used:
when the frequency band of 0.1 GHz-1 GHz is used, 680nH is selected as the bias inductor L1;
when a frequency band of 1-2 GHz is used, 68nH is selected as the offset inductor L1;
when a frequency band of 2-8 GHz is used, 47nH is selected as the bias inductor L1;
when the frequency band of 8-10 GHz is used, 27nH is selected as the offset inductor L1;
when the frequency band of 8-18 GHz is used, 22nH is selected as the offset inductor L1.
8. The miniature high-power microwave limiter based on the passive detection bias circuit and the micro-assembly of claim 1, wherein:
the intermediate-stage blocking capacitor C3 and the output-end blocking capacitor C4 adopt metal-nitride-silicon MNS microwave chip capacitors, the size of the capacitors is 0.5mm by 0.2mm, and the capacitors are used for reducing high-frequency loss, reducing the size and providing temperature stability; the last-stage amplitude limiting diode V5 adopts a high-power PIN amplitude limiting diode with the thickness of 2-5 mu m, the breakdown voltage of 20-50V and the junction capacitance of less than 0.3pF, and adopts a bare chip without external packaging, and the volume of the bare chip is 0.4mm by 0.2 mm; the freewheeling inductor L2 is a spiral planar inductor fabricated by photolithography and thin film processes, with inductance of 20 nH-100 nH and size of 1.1mm 0.3 mm.
9. The amplitude limiting method of the micro high-power microwave amplitude limiter based on the passive detection bias circuit and the micro assembly as claimed in any one of claims 1 to 8, wherein: the method comprises the following steps:
s1: after a high-power radio-frequency signal enters the pulse amplitude limiting circuit from the input end, firstly, the high-power radio-frequency signal is subjected to amplitude limiting through a bidirectional TVS diode V1;
s2: then the radio frequency signal is coupled to a detector circuit by a coupler W1 of the self-detection driving amplitude limiting circuit;
s3: a voltage signal detected by the wave detector circuit is added to the first high-power amplitude limiting diode V3 and the second high-power amplitude limiting diode V4 through a bias inductor L1, so that the first high-power amplitude limiting diode V3 and the second high-power amplitude limiting diode V4 are conducted, and the final-stage amplitude limiting diode V5 is protected.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115664364A (en) * | 2022-12-22 | 2023-01-31 | 四川斯艾普电子科技有限公司 | High-power amplitude limiter based on thick-film circuit and implementation method |
| CN115866936A (en) * | 2023-03-01 | 2023-03-28 | 四川斯艾普电子科技有限公司 | Method for realizing multilayer circuit board by adopting thick-film process |
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2022
- 2022-06-08 CN CN202210644307.XA patent/CN115065330A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115664364A (en) * | 2022-12-22 | 2023-01-31 | 四川斯艾普电子科技有限公司 | High-power amplitude limiter based on thick-film circuit and implementation method |
| CN115664364B (en) * | 2022-12-22 | 2023-02-28 | 四川斯艾普电子科技有限公司 | High-power amplitude limiter based on thick-film circuit and implementation method |
| CN115866936A (en) * | 2023-03-01 | 2023-03-28 | 四川斯艾普电子科技有限公司 | Method for realizing multilayer circuit board by adopting thick-film process |
| CN115866936B (en) * | 2023-03-01 | 2023-05-30 | 四川斯艾普电子科技有限公司 | Method for realizing multilayer circuit board by adopting thick film technology |
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