CN216531290U - Radio frequency circuit based on single-pole triple-throw switch - Google Patents
Radio frequency circuit based on single-pole triple-throw switch Download PDFInfo
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- CN216531290U CN216531290U CN202220084236.8U CN202220084236U CN216531290U CN 216531290 U CN216531290 U CN 216531290U CN 202220084236 U CN202220084236 U CN 202220084236U CN 216531290 U CN216531290 U CN 216531290U
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Abstract
The utility model relates to a radio frequency circuit based on a single-pole three-throw switch, which comprises two single-pole three-throw switch modules with the same function; the single-pole three-throw switch module comprises three identical switch selection circuits, a radio frequency input end and a radio frequency output end; the radio frequency input end is connected with each switch selection circuit, and the output end of each switch selection circuit is connected with the radio frequency output end. The utility model has the advantages that: compared with the prior art, the working frequency band of the single-pole three-throw switch radio frequency circuit can be increased, and the power bearing capacity of the single-pole three-throw switch radio frequency circuit is greatly improved.
Description
Technical Field
The utility model relates to the technical field of electronics, in particular to a radio frequency circuit based on a single-pole triple-throw switch.
Background
The technical scheme is applied to the transmitting system of the active phased array radar, realizes the switching of the antenna units, completes the gating and the turn-off of high-power transmitting signals, and has the characteristics of high bearing power (peak value 4KW) and wide working frequency band (P + L wave band). In the switch selection circuit of the prior art, the series PIN diode only comprises a primary diode circuit, the cathode of the series diode is connected with the radio frequency input end, and the anode of the series diode is connected with the first bias circuit. The power bearing capacity and the working frequency band of the PIN diode are limited by parameters such as thermal resistance, junction capacitance and the like of the PIN diode, and the requirements of the application background are difficult to meet.
SUMMERY OF THE UTILITY MODEL
The utility model aims to overcome the defects in the prior art, provides a radio frequency circuit based on a single-pole three-throw switch, and solves the defects in the prior art.
The purpose of the utility model is realized by the following technical scheme: a radio frequency circuit based on a single-pole three-throw switch comprises two single-pole three-throw switch modules with the same function; the single-pole three-throw switch module comprises three identical switch selection circuits, a radio frequency input end and a radio frequency output end; the radio frequency input end is connected with each switch selection circuit, and the output end of each switch selection circuit is connected with the radio frequency output end.
Further, the switch selection circuit comprises a series PIN diode, a parallel PIN diode and a bias circuit; the radio frequency input end is sequentially connected with the serial PIN diode, the parallel PIN diode and the bias circuit; the bias circuit is connected with the radio frequency output end.
Further, the series PIN diode includes a first parallel diode circuit and a second parallel diode circuit connected in series; the radio frequency input end is connected with the cathode of a diode of the first parallel diode circuit, and the anode of the diode of the first parallel diode circuit is connected with the anode of a diode of the second parallel diode circuit; the first parallel diode circuit and the second parallel diode circuit both comprise two diodes which are connected in parallel in the same direction.
Further, the bias circuit includes a first bias circuit and a second bias circuit; the first bias circuit is connected between the first parallel diode circuit and the second parallel diode circuit, and the second bias circuit is connected between the negative electrode of the second parallel diode circuit and the radio frequency output end.
Further, the parallel PIN diode is connected between the cathode of the second parallel diode circuit and the second bias circuit, and the other end of the parallel PIN diode is grounded.
Further, the radio frequency inductor and the radio frequency capacitor are connected in parallel, and the other end of the radio frequency inductor is grounded; and a radio frequency inductor and a radio frequency capacitor are connected between the cathode of the second parallel diode circuit and the parallel PIN diode and between the second bias circuit and the radio frequency output end.
Further, the first bias circuit and the second bias circuit each comprise a resistor, an inductor and a capacitor; the resistor is connected in series with the inductor and then connected in parallel with the capacitor, and the other end of the capacitor is grounded.
The utility model has the following advantages:
according to the technical scheme, the series PIN diode comprises a first parallel diode circuit and a second parallel diode circuit which are connected in series, the circuit can reduce the influence of junction capacitance parameters of the PIN diode on the working frequency band of the circuit in a two-stage cascade mode, and the application requirement of a P + L waveband is met.
According to the technical scheme, the first parallel diode circuit and the second parallel diode circuit respectively comprise two diodes which are connected in parallel in the same direction, the circuit can reduce the influence of the thermal resistance parameter of the PIN diode on the power bearing capacity of the circuit in a parallel connection mode in the same direction, the power bearing level of the circuit is improved, and the application requirement of a peak value of 4KW is met.
Drawings
Fig. 1 is a circuit diagram of a single pole, triple throw switch module.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all the embodiments. The components of the embodiments of the present application, generally described and illustrated in the figures herein, can be arranged and designed in a wide variety of different configurations. Thus, the following detailed description of the embodiments of the present application, as presented in the figures, is not intended to limit the scope of the claimed application, but is merely representative of selected embodiments of the application. All other embodiments, which can be derived by a person skilled in the art from the embodiments of the present application without making any creative effort, shall fall within the protection scope of the present application. The utility model is further described below with reference to the accompanying drawings.
As shown in fig. 1, a rf circuit based on a single-pole-three-throw switch includes two single-pole-three-throw switch modules with the same function; the single-pole three-throw switch module comprises three identical switch selection circuits, a radio frequency input end and a radio frequency output end; the radio frequency input end is connected with each switch selection circuit, and the output end of each switch selection circuit is connected with the radio frequency output end.
Furthermore, the radio frequency input end is JX-0, and the radio frequency output ends are JX-1, JX-2 and JX-3; the radio frequency input end JX-0 is connected with a three-way switch selection circuit which is respectively connected with the radio frequency output ends JX-1, JX-2 and JX-3.
The switch selection circuit comprises a serial PIN diode, a parallel PIN diode and a bias circuit; the radio frequency input end is sequentially connected with the serial PIN diode, the parallel PIN diode and the bias circuit; the bias circuit is connected with the radio frequency output end. The circulation of the circuit is increased by serially connecting PIN diodes, and the isolation purpose is realized by parallelly connecting the PIN diodes.
The series PIN diode comprises a first parallel diode circuit and a second parallel diode circuit which are connected in series; the radio frequency input end is connected with the cathode of a diode of the first parallel diode circuit, and the anode of the diode of the first parallel diode circuit is connected with the anode of a diode of the second parallel diode circuit; the first parallel diode circuit and the second parallel diode circuit both comprise two diodes which are connected in parallel in the same direction.
The bias circuit comprises a first bias circuit and a second bias circuit; the first bias circuit is connected between the first parallel diode circuit and the second parallel diode circuit, and the second bias circuit is connected between the negative electrode of the second parallel diode circuit and the radio frequency output end.
And the parallel PIN diode is connected between the negative electrode of the second parallel diode circuit and the second bias circuit, and the other end of the parallel PIN diode is grounded.
The radio frequency inductor and the radio frequency capacitor are connected in parallel, and the other end of the radio frequency inductor is grounded; and a radio frequency inductor and a radio frequency capacitor are connected between the cathode of the second parallel diode circuit and the parallel PIN diode and between the second bias circuit and the radio frequency output end.
The first bias circuit and the second bias circuit respectively comprise a resistor, an inductor and a capacitor; the resistor is connected in series with the inductor and then connected in parallel with the capacitor, and the other end of the capacitor is grounded. The other end of the resistor in the bias circuit is connected with the low-frequency part.
Because the peak power which needs to be borne by the utility model is more than 4KW, components in the circuit can generate heat due to equivalent resistance, so the design selection is that the parameters of the equivalent resistance, breakdown voltage and the like need to be comprehensively considered for each component, so that the low heat productivity under the high-power condition is ensured, and the normal work of the components and the circuit is ensured.
Firstly, selecting a dielectric substrate: the radio frequency circuit of the utility model adopts the form that the microstrip circuit is combined with the series-parallel PIN diode core, therefore, the dielectric substrates of the microstrip circuit and the diode core are respectively selected: firstly, a microstrip line transmission medium substrate is adopted, and a TC600 substrate with the thickness of 1.0mm is selected in consideration of the power borne by a strip line to reduce the dissipation power and the heat productivity of the strip line; one of the thicknesses is selected to realize the wider 50 omega microstrip line, increase the radiating surface of the microstrip line, reduce the equivalent resistance of the circuit and reduce the heat productivity; the thickness of the two substrates can realize higher breakdown voltage, and the substrate with 1.0mm can realize 93KV breakdown, so that the circuit is not broken down under the power condition. And secondly, the dielectric substrate of the PIN tube core is adopted, and because the tube core is a heating power device, the BeO ceramic substrate with extremely high heat transfer coefficient is selected as a transmission medium and a heat dissipation substrate of the PIN tube core, and in practical application, the thickness of the selected BeO ceramic substrate is 1mm in order to further increase the heat dissipation area of the microstrip line and reduce the equivalent resistance and the dissipation power of the circuit.
Secondly for diode selection: by integrating the requirements of switching power, switching time and isolation, under the condition of meeting the radio frequency performance indexes, the PIN tube core needs to select the tube core with smaller radio frequency resistance to reduce the heat productivity of a heat source, and simultaneously selects the tube core with a thicker I layer to improve the reverse breakdown voltage, and most importantly, the tube core with smaller heat resistance is selected to increase the heat dispersion performance of the heat source. A high-power chip die with the model number of WPX0038HB is selected as the PIN die of the utility model. The series resistance of the PIN tube core is only 0.45ohm, so that the PIN tube core has very low heat productivity when applied to a power condition, and meanwhile, the thermal resistance of the PIN tube core is only 6 ℃/W, so that the PIN tube core has good heat dissipation performance, the thickness of an I layer of the PIN tube core is 145um, the corresponding reverse breakdown voltage is more than 1500V, and the application of KW-level power condition can be met.
Unlike a conventional diode, the PIN die also has operating characteristics that are largely affected by the dc reverse bias voltage. Under high power application conditions, when the reverse bias voltage is insufficient, the insertion loss of a circuit is caused to increase rapidly, the uncontrolled insertion loss is easy to cause permanent short circuit of the PIN die, and the failure mode is called an injection mode damage mechanism and is a problem needing to be considered preferentially in the practical design and application of the PIN die. Experiments prove that the insertion loss changes along with the reverse bias voltage, and the damage can be avoided when the reverse bias voltage is increased. But the reverse bias voltage can not be increased without limit, and when the radio frequency voltage plus the reverse bias voltage is greater than the reverse breakdown voltage of the PIN die, the nonlinear insertion loss can be caused, so that the PIN die is damaged. Therefore, in most practical cases, the reverse bias voltage is kept between 10% and 20% of the diode reverse breakdown voltage, below which injection mode tends to occur, causing permanent shorting of the PIN die, and beyond which reverse breakdown is highly likely. In order to ensure that the PIN die withstands the radio frequency power, the maximum radio frequency rated voltage is also recommended to be less than half of the reverse breakdown voltage of the PIN die in practical use.
Reverse bias voltage VBIASThe calculation formula is as follows, and the calculation value is the minimum value, and when the calculation value is larger than the minimum value, the injection mode can be effectively avoided.
Wherein Freq represents the operating frequency in MHz; i represents the thickness of the diode I layer in unit mil; vpeak represents the radio frequency peak voltage in units of V; duty represents the rf signal Duty cycle.
Calculating V when the working frequency is P wave band according to the formulaBIAS232.79V, when the working frequency is L bandBIAS67.99V. Therefore, the reverse bias voltage we finally choose at design time is-250V, which is about 16.7% of the reverse breakdown voltage of the diode. The bias voltage can effectively avoid the injection mode when the full-band work is carried out, and can avoid the damage caused by exceeding reverse breakdown voltage when the bias voltage is superposed with radio frequency voltage.
The utility model bears the peak power of 4KW, and the highest radio frequency peak voltage borne by the PIN tube core under the power condition is as follows: vp1 ═ 1.414 (R)0×P)1/2632.3V, plus-250V for the DC reverse bias voltage of the PIN die, 882.3V for the actual Vp 2V +632.3V of the PIN die, and more than 1500V for the reverse breakdown voltage of the PIN die, thus meeting the class II derating requirement of the reverse voltage in the component derating rule.
The working principle of the utility model is as follows:
the utility model comprises three identical switch selection circuits, one of the three circuits can be selected at will when the circuit works, and the other two circuits are in a turn-off state. Taking the gating state from the radio frequency input end JX-0 to the radio frequency output end JX-1 as an example, the bias voltage provided by the first bias circuit of JX-1 is +5V, so that the serial PIN diode (comprising the first parallel diode circuit and the second parallel diode circuit which are connected in series) is in a forward conduction state, and the corresponding radio frequency signal is in conduction; the bias voltage provided by the second bias circuit of the JX-1 is-250V, so that the parallel PIN diode is in a reverse cut-off state, and the corresponding radio frequency signal is turned on. At the moment, the bias voltage provided by the first bias circuits of the JX-2 and the JX-3 is-250V, so that the serial PIN diode (comprising the first parallel diode circuit and the second parallel diode circuit which are connected in series) is in a reverse cut-off state, and the corresponding radio frequency signal is turned off; the bias voltage provided by the second bias circuits of the JX-2 and the JX-3 is +5V, so that the parallel PIN diodes are in a forward conduction state, and the corresponding radio frequency signals are turned off.
Namely, the corresponding bias voltage is controlled, so that the radio frequency input end JX-0 to the radio frequency output end JX-1 is in a gating state, and the radio frequency input end JX-0 to the radio frequency output ends JX-2 and JX-3 are in a switching-off state. Similarly, the gate from the radio frequency input end JX-0 to the radio frequency output end JX-2 or from the radio frequency input end JX-0 to the radio frequency output end JX-3 can be realized by changing each bias voltage.
The foregoing is illustrative of the preferred embodiments of this invention, and it is to be understood that the utility model is not limited to the precise form disclosed herein and that various other combinations, modifications, and environments may be resorted to, falling within the scope of the concept as disclosed herein, either as described above or as apparent to those skilled in the relevant art. And that modifications and variations may be effected by those skilled in the art without departing from the spirit and scope of the utility model as defined by the appended claims.
Claims (7)
1. A radio frequency circuit based on single-pole triple-throw switch is characterized in that: the single-pole three-throw switch comprises two single-pole three-throw switch modules with the same function; the single-pole three-throw switch module comprises three identical switch selection circuits, a radio frequency input end and a radio frequency output end; the radio frequency input end is connected with each switch selection circuit, and the output end of each switch selection circuit is connected with the radio frequency output end.
2. The rf circuit of claim 1, wherein: the switch selection circuit comprises a series PIN diode, a parallel PIN diode and a bias circuit; the radio frequency input end is sequentially connected with the serial PIN diode, the parallel PIN diode and the bias circuit; the bias circuit is connected with the radio frequency output end.
3. The rf circuit of claim 2, wherein: the series PIN diode comprises a first parallel diode circuit and a second parallel diode circuit which are connected in series; the radio frequency input end is connected with the cathode of a diode of the first parallel diode circuit, and the anode of the diode of the first parallel diode circuit is connected with the anode of a diode of the second parallel diode circuit; the first parallel diode circuit and the second parallel diode circuit both comprise two diodes which are connected in parallel in the same direction.
4. The RF circuit of claim 3, wherein: the bias circuit comprises a first bias circuit and a second bias circuit; the first bias circuit is connected between the first parallel diode circuit and the second parallel diode circuit, and the second bias circuit is connected between the negative electrode of the second parallel diode circuit and the radio frequency output end.
5. The RF circuit of claim 4, wherein: the parallel PIN diode is connected between the negative electrode of the second parallel diode circuit and the second bias circuit, and the other end of the parallel PIN diode is grounded.
6. The RF circuit of claim 5, wherein: the radio frequency inductor and the radio frequency capacitor are connected in parallel, and the other end of the radio frequency inductor is grounded; and a radio frequency inductor and a radio frequency capacitor are connected between the cathode of the second parallel diode circuit and the parallel PIN diode and between the second bias circuit and the radio frequency output end.
7. A radio frequency circuit based on a single pole three throw switch according to any one of claims 4 to 6, wherein: the first bias circuit and the second bias circuit respectively comprise a resistor, an inductor and a capacitor; the resistor is connected in series with the inductor and then connected in parallel with the capacitor, and the other end of the capacitor is grounded.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202220084236.8U CN216531290U (en) | 2022-01-13 | 2022-01-13 | Radio frequency circuit based on single-pole triple-throw switch |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202220084236.8U CN216531290U (en) | 2022-01-13 | 2022-01-13 | Radio frequency circuit based on single-pole triple-throw switch |
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| Publication Number | Publication Date |
|---|---|
| CN216531290U true CN216531290U (en) | 2022-05-13 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202220084236.8U Active CN216531290U (en) | 2022-01-13 | 2022-01-13 | Radio frequency circuit based on single-pole triple-throw switch |
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| Country | Link |
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| CN (1) | CN216531290U (en) |
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- 2022-01-13 CN CN202220084236.8U patent/CN216531290U/en active Active
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