CN115064602A - Single photon avalanche photodiode and manufacturing method thereof - Google Patents
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- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
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- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
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Abstract
The invention provides a single photon avalanche photodiode and a manufacturing method thereof. The self-adaptive resistance structure with the first resistance state and the second resistance state is integrated on the single photon avalanche photodiode structure, bias voltage applied to two ends of the self-adaptive resistance structure can be used for switching between the first resistance state and the second resistance state back and forth, the self-adaptive resistance structure is enabled to be in the first resistance state with larger resistance when the single photon avalanche photodiode structure discharges, avalanche current of the single photon avalanche photodiode structure can be quenched quickly, the self-adaptive resistance structure is enabled to be in the second resistance state with smaller resistance when the single photon avalanche photodiode structure charges, reset time can be shortened greatly, and the maximum counting rate of the single photon avalanche photodiode structure in a free running mode can be improved.
Description
Technical Field
The invention relates to the technical field of detector chip manufacturing, in particular to a single photon avalanche photodiode and a manufacturing method thereof.
Background
Single Photon Avalanche Diodes (SPADs) based on semiconductor p-n junctions are attractive as a compact, efficient, room temperature technology for applications involving three-dimensional imaging and ranging using time-of-flight methods, such as autonomous lidar, attitude recognition, three-dimensional scanning, quantum communication, and medical fluoroscopy. In the application, the SPAD works in a free running mode, the bias voltage is always kept in a Geiger state above the breakdown voltage, and photons with unknown arrival time can be detected. Avalanche is triggered upon detection of a photon signal, however the avalanche process is a self-sustaining process and does not extinguish actively. To prevent the temperature rise from burning out the SPAD, a quenching circuit is needed to terminate the avalanche multiplication process and reset the device bias voltage.
The adoption of passive quenching is the simplest method, the avalanche current rapid quenching is realized by integrating a resistor with large enough and connecting the resistor with the SPAD in series, and the resistor with a large fixed resistance value (such as CrSi, NiCr, a-Si and other materials) is generally adopted in the prior art, so that the long reset time is caused due to the RC delay of the SPAD depletion capacitance charging, and is usually in the range of 1-10 microseconds. Although the time constant of the RC delay can be reduced by reducing the optical sensing area of the detector to reduce the junction capacitance, it reduces the sensitivity and has no significant effect.
Therefore, a technical scheme for shortening the reset time and increasing the counting rate of the single photon avalanche photodiode in the free running mode while maintaining the simple structure of passive quenching is needed at present.
Disclosure of Invention
In view of the above drawbacks of the prior art, an object of the present invention is to provide a solution for a single photon avalanche photodiode with integrated adaptive resistance, so as to solve the above technical problems.
In order to achieve the above objects and other related objects, the present invention provides the following technical solutions.
A single photon avalanche photodiode comprising:
the single photon avalanche photodiode structure comprises a back surface and a front surface which are oppositely arranged, wherein a first electrode and an incident light window are led out from the back surface, a second electrode is led out from the front surface, and a third electrode is also arranged on the front surface;
the self-adaptive resistance structure is arranged on the front surface of the single photon avalanche photodiode structure, one end of the self-adaptive resistance structure is connected with the second electrode, and the other end of the self-adaptive resistance structure is connected with the third electrode;
the adaptive resistance structure is provided with a first resistance state and a second resistance state, the resistance of the first resistance state is larger than that of the second resistance state, the adaptive resistance structure is in the first resistance state when the single photon avalanche photodiode structure discharges, and the adaptive resistance structure is in the second resistance state when the single photon avalanche photodiode structure charges.
Optionally, the single photon avalanche photodiode structure comprises:
a substrate comprising oppositely disposed back and front sides;
a buffer layer disposed on a front side of the substrate;
a multiplication layer disposed on the buffer layer;
a charge layer disposed on the multiplication layer;
a graded layer disposed on the charge layer;
an absorption layer disposed on the graded layer;
a cap layer disposed on the absorber layer;
a contact layer disposed on the cap layer;
the passivation layer is filled in a groove and is flush with the contact layer, and the groove sequentially penetrates through the contact layer, the cap layer, the absorption layer, the gradual change layer, the charge layer, the multiplication layer and the buffer layer to the substrate;
a dielectric layer disposed on the contact layer and the passivation layer;
the incident light window is arranged on the back surface of the substrate;
the first electrode is arranged on the back surface of the substrate;
the second electrode penetrates through the dielectric layer and is connected with the contact layer;
the third electrode is arranged on the dielectric layer.
Optionally, the first electrode is a ring electrode, the first electrode is disposed around the incident light window, and an antireflection film is disposed on the incident light window.
Optionally, the adaptive resistance structure comprises:
the inert metal layer is arranged on the dielectric layer and is connected with the second electrode;
a metal oxide layer disposed on the inert metal layer;
and a diffusion metal layer disposed on the metal oxide layer and connected to the third electrode.
Optionally, the material of the inert metal layer at least includes titanium and platinum, the material of the metal oxide layer at least includes hafnium oxide, tantalum pentoxide and copper oxide, and the material of the diffusion metal layer at least includes tantalum, silver and gold.
Optionally, the thickness of the inert metal layer is 10-100 nm, the thickness of the metal oxide layer is 5-10 nm, and the thickness of the diffusion metal layer is 10-100 nm.
Optionally, the resistance value range of the first resistance state is 500k Ω to 5000M Ω, and the resistance value range of the second resistance state is 100 Ω to 30k Ω.
A method of fabricating a single photon avalanche photodiode, comprising:
forming a single photon avalanche photodiode structure, wherein the single photon avalanche photodiode structure comprises a back surface and a front surface which are oppositely arranged, a first electrode and an incident light window are led out from the back surface of the single photon avalanche photodiode structure, a second electrode is led out from the front surface of the single photon avalanche photodiode structure, and a third electrode is further arranged on the front surface of the single photon avalanche photodiode structure;
forming an adaptive resistance structure on the front surface of the single photon avalanche photodiode structure, wherein one end of the adaptive resistance structure is connected with the second electrode, and the other end of the adaptive resistance structure is connected with the third electrode;
the self-adaptive resistance structure is provided with a first resistance state and a second resistance state, the resistance of the first resistance state is larger than that of the second resistance state, the self-adaptive resistance structure is in the first resistance state when the single photon avalanche photodiode structure is discharged, and the self-adaptive resistance structure is in the second resistance state when the single photon avalanche photodiode structure is charged.
Optionally, the step of forming a single photon avalanche photodiode structure includes:
providing a substrate, wherein the substrate comprises a back surface and a front surface which are oppositely arranged;
sequentially forming a buffer layer, a multiplication layer, a charge layer, a gradient layer, an absorption layer, a cap layer and a contact layer on the front surface of the substrate;
forming a groove, wherein the groove sequentially penetrates through the contact layer, the cap layer, the absorption layer, the gradient layer, the charge layer, the multiplication layer and the buffer layer to the substrate;
forming a passivation layer, wherein the passivation layer is filled in the groove and is flush with the contact layer;
forming a dielectric layer, wherein the dielectric layer covers the passivation layer and the contact layer;
forming the second electrode and the third electrode, wherein the second electrode penetrates through the dielectric layer to be connected with the contact layer, and the third electrode is arranged on the dielectric layer;
thinning the substrate from the back side;
forming an antireflection film at the position of an incident light window on the back surface of the substrate;
and forming a first electrode on the back surface of the substrate, wherein the first electrode is arranged around the antireflection film.
Optionally, the step of forming an adaptive resistance structure on the front side of the single photon avalanche photodiode structure comprises:
forming an inert metal layer on the dielectric layer, wherein the inert metal layer is connected with the second electrode;
forming a metal oxide layer on the inert metal layer;
and forming a diffusion metal layer on the metal oxide layer, wherein the diffusion metal layer is connected with the third electrode.
As described above, the single photon avalanche photodiode and the manufacturing method thereof provided by the present invention have at least the following beneficial effects:
the self-adaptive resistance structure integrated with the single photon avalanche photodiode structure has a first resistance state and a second resistance state, the first resistance state and the second resistance state can be switched back and forth through bias voltages applied to a second electrode and a third electrode at two ends of the self-adaptive resistance structure, the self-adaptive resistance structure is enabled to be in the first resistance state with larger resistance when the single photon avalanche photodiode structure discharges, avalanche current of the single photon avalanche photodiode structure can be rapidly quenched, the self-adaptive resistance structure is enabled to be in the second resistance state with smaller resistance when the single photon avalanche photodiode structure charges, reset time can be greatly shortened, and the maximum counting rate of the single photon avalanche photodiode structure in a free running mode can be improved.
Drawings
Fig. 1 is a schematic structural diagram of a single photon avalanche photodiode integrated with an adaptive resistor according to the present invention.
Fig. 2 is a schematic structural diagram of the adaptive resistance structure 2 in fig. 1.
Fig. 3 is a schematic diagram showing the variation of the post-pulse probability with dead time of a single photon avalanche photodiode integrated with a self-adaptive resistor and a single photon avalanche photodiode integrated with a fixed resistance value resistor.
Figure 4 is a graph of the maximum count rate of the adaptive resistance versus different fixed resistance values for two single photon avalanche photodiodes.
FIG. 5 is a schematic diagram of the steps of the method of manufacturing a single photon avalanche photodiode integrated with adaptive resistance according to the present invention.
Fig. 6-15 are process flow diagrams of a method of fabricating a single photon avalanche photodiode in accordance with the present invention.
Detailed Description
As mentioned in the background section above, the inventors have studied to find out that for avalanche quenching of a single photon avalanche diode: at present, a resistor with a large fixed resistance value is generally integrated to be connected in series with a single photon avalanche diode to achieve rapid quenching of avalanche current, however, due to the RC delay of charging of a depletion capacitor in the single photon avalanche diode, a long reset time is caused, generally within a range of 1-10 microseconds, the counting rate of the single photon avalanche diode can be reduced by prolonging the reset time, although the junction capacitance can be reduced by reducing the optical sensing area of a detector, and further the time constant of the RC delay is reduced, the sensitivity of the single photon avalanche diode can be reduced, and the time constant reduction effect is not obvious, and the technical scheme is not preferable.
Based on the technical scheme, the invention provides a technical scheme of a single photon avalanche diode integrated with a self-adaptive resistor, which comprises the following steps: the self-adaptive resistance structure is integrated on the single photon avalanche photodiode structure in series, the self-adaptive resistance structure is provided with a first resistance state and a second resistance state, bias voltage applied to two ends of the self-adaptive resistance structure is switched back and forth between the first resistance state and the second resistance state, the self-adaptive resistance structure is enabled to be in the first resistance state with larger resistance when the single photon avalanche photodiode structure discharges, avalanche current of the single photon avalanche photodiode structure is rapidly quenched, the self-adaptive resistance structure is enabled to be in the second resistance state with smaller resistance when the avalanche single photon photodiode structure charges, reset time is shortened, and counting rate of the single photon avalanche photodiode structure is improved.
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
Please refer to fig. 1 to 15. It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the present invention, and the components related to the present invention are only shown in the drawings rather than drawn according to the number, shape and size of the components in actual implementation, and the type, quantity and proportion of the components in actual implementation may be changed freely, and the layout of the components may be more complicated. The structures, proportions, sizes, and other dimensions shown in the drawings and described in the specification are for understanding and reading the present disclosure, and are not intended to limit the scope of the present disclosure, which is defined in the claims, and are not essential to the art, and any structural modifications, changes in proportions, or adjustments in size, which do not affect the efficacy and attainment of the same are intended to fall within the scope of the present disclosure.
First, as shown in fig. 1, the present invention provides a single photon avalanche photodiode, comprising:
the single photon avalanche photodiode structure 1 comprises a back surface and a front surface which are oppositely arranged, wherein an incident light window 100 and a first electrode 101 are led out from the back surface, a second electrode 102 is led out from the front surface, and a third electrode 103 is further arranged on the front surface;
the self-adaptive resistance structure 2 is arranged on the front surface of the single photon avalanche photodiode structure 1, one end of the self-adaptive resistance structure is connected with the second electrode 102, and the other end of the self-adaptive resistance structure is connected with the third electrode 103;
the self-adaptive resistance structure 2 has a first resistance state and a second resistance state, the resistance of the first resistance state is larger than that of the second resistance state, the self-adaptive resistance structure 2 is in the first resistance state when the single photon avalanche photodiode structure 1 discharges, and the self-adaptive resistance structure 2 is in the second resistance state when the single photon avalanche photodiode structure 1 charges.
In an alternative embodiment of the present invention, as shown in fig. 1, a single photon avalanche photodiode structure 1 includes:
a substrate 104 comprising oppositely disposed back and front sides;
a buffer layer 105 disposed on the front surface of the substrate 104;
a multiplication layer 106 provided on the buffer layer 105;
a charge layer 107 provided on the multiplication layer 106;
a graded layer 108 disposed on the charge layer 107;
an absorption layer 109 provided on the graded layer 108;
a cap layer 110 disposed on the absorber layer 109;
a contact layer 111 disposed on the cap layer 110;
a passivation layer 112 filled in the groove and flush with the contact layer 111, wherein the groove sequentially passes through the contact layer 111, the cap layer 110, the absorption layer 109, the graded layer 108, the charge layer 107, the multiplication layer 106 and the buffer layer 105 to the substrate 104;
a dielectric layer 113 disposed on the contact layer 111 and the passivation layer 112;
an incident light window 100 disposed on the back surface of the substrate 104;
a first electrode 101 provided on the back surface of the substrate 104;
a second electrode 102 connected to the contact layer 111 through the dielectric layer 113;
and a third electrode 103 disposed on the dielectric layer 113.
In detail, as shown in fig. 1, the first electrode 101 is a ring electrode, the first electrode 101 is disposed around the incident light window 100, and an antireflection film 114 is disposed on the incident light window 100.
The single photon avalanche photodiode structure 1 shown in fig. 1 is a mesa structure, but the specific structure of the single photon avalanche photodiode structure 1 is not limited to this, and may include other optional structures such as a planar structure, and the like, and is not limited thereto.
In an alternative embodiment of the present invention, as shown in fig. 1-2, the adaptive resistance structure 2 includes:
an inert metal layer 201 disposed on the dielectric layer 113 and connected to the second electrode 102;
a metal oxide layer 202 disposed on the inert metal layer 201;
and a diffusion metal layer 203 disposed on the metal oxide layer 202 and connected to the third electrode 103.
The material of the inert metal layer 201 at least includes titanium (Ti) and platinum (Pt), and the material of the metal oxide layer 202 at least includes hafnium oxide (HfO) x ) Tantalum pentoxide (Ta) 2 O 5 ) And dielectric metal oxides such as copper oxide (CuO), and the material of the diffusion metal layer 203 includes at least metals that are easily diffused in metal oxides such as tantalum (Ta), silver (Ag), and gold (Au); therefore, the materials of the three structural layers in the adaptive resistance structure 2 may be specifically: Pt/HfO x /Au，Pt/Ta 2 O 5 and/Ta, TiPt/CuO/AuAg, etc., without limitation.
In an optional embodiment of the invention, the thickness of the inert metal layer 201 is 10 to 100nm, the thickness of the metal oxide layer 202 is 5 to 10nm, the thickness of the diffusion metal layer 203 is 10 to 100nm, and the total thickness of the adaptive resistance structure 2 is 25 to 210 nm.
In detail, as shown in fig. 2, the adaptive resistance structure 2 has two states, a first resistance state (high resistance state) and a second resistance state (low resistance state), the resistance of the first resistance state being greater than the resistance of the second resistance state, and the first resistance state and the second resistance state are switched back and forth by a bias voltage (voltage difference) applied across the adaptive resistance structure 2: when the voltage on the third electrode is greater than the voltage on the second electrode, the voltage difference forces the diffusion metal layer 203 to diffuse, so that a part of the metal diffusion layer 203 diffuses into the metal oxide layer 202 to form a conductive channel, the resistance of the adaptive resistance structure 2 is reduced, and the adaptive resistance structure 2 is switched from the first resistance state to the second resistance state; when the voltage on the third electrode is less than or equal to the voltage on the second electrode, the diffusion phenomenon of the diffusion metal layer 203 is almost negligible, the conductive channel disappears, the resistance of the adaptive resistance structure 2 rises, and the adaptive resistance structure 2 returns to the first resistance state.
In detail, as shown in fig. 1, based on the adaptive resistance structure 2, the resistance value of the whole single photon avalanche photodiode can be adaptively switched in different working states: when the single photon avalanche photodiode structure 1 discharges, the self-adaptive resistance structure 2 is in a first resistance state with larger resistance, and can rapidly quench the avalanche current of the single photon avalanche photodiode structure 1; when the single photon avalanche photodiode structure 1 is charged, the self-adaptive resistor junction 2 is in a second resistance state with smaller resistance, so that the reset time can be shortened, and the counting rate of the single photon avalanche photodiode structure 1 can be improved.
In an optional embodiment of the present invention, the resistance in the first resistance state ranges from 500k Ω to 5000M Ω, and the resistance in the second resistance state ranges from 100 Ω to 30k Ω.
It should be emphasized that, in the adaptive resistance structure 2, the smaller the contact area between the metal oxide layer 202 at the middle position and the inert metal layer 201 at the bottom position (or the diffusion metal layer 203 at the top position), the smaller the parasitic capacitance, the shorter the charge recovery time of the whole single photon avalanche photodiode, but the contact area also affects the resistance value finally presented by the adaptive resistance structure 2, and therefore, the size of the contact area needs to be designed in combination with the resistance value of the adaptive resistance structure 2A compromise is required with the charge recovery time of the entire single photon avalanche photodiode. In an alternative embodiment of the present invention, the contact area may be 0.01 μm 2 ～10000μm 2 。
In an optional embodiment of the present invention, to verify the technical effect of the single photon avalanche photodiode integrated with the adaptive resistor in the present invention, a comparison experiment is performed between the single photon avalanche photodiode integrated with the adaptive resistor in the present invention and the single photon avalanche photodiode integrated with the fixed resistance resistor in the prior art, and the experimental comparison result is shown in fig. 3 and 4.
In detail, as shown in fig. 3, after-pulse probabilities along with dead time are compared, when the single photon avalanche photodiode integrated with the adaptive resistor has a dead time of about 100ns, the after-pulse probability is already close to a normal value, and the dead time of the single photon avalanche photodiode integrated with the fixed resistance resistor is about 1 μ s. Therefore, the recovery time of the single photon avalanche photodiode integrated with the self-adaptive resistor is far shorter than that of the single photon avalanche photodiode integrated with the fixed resistance resistor, and the reset time of the single photon avalanche photodiode is greatly shortened.
In detail, as shown in fig. 4, comparison is performed based on the maximum count rate, the maximum count rate of the single photon avalanche photodiode integrated with the adaptive resistor is greatly increased relative to the integrated fixed resistor, and the maximum count rate of the single photon avalanche photodiode integrated with the fixed resistor is gradually decreased as the resistance value increases, so that the maximum on-off count rate of the single photon avalanche photodiode integrated with the adaptive resistor is obviously increased.
Although the adaptive resistance structure 2 shown in fig. 1 to 2 has a three-layer structure, the structure of the adaptive resistance structure 2 is not limited to a three-layer structure, and may be a four-layer structure, a five-layer structure, or the like based on the three-layer structure, and the adaptive resistance structure may be optimally designed by adding a buffer layer, a transition layer, or the like, but is not limited thereto.
Next, as shown in fig. 5, the present invention further provides a method for manufacturing a single photon avalanche photodiode, which includes the steps of:
s1, forming a single photon avalanche photodiode structure 1, wherein the single photon avalanche photodiode structure 1 comprises a back surface and a front surface which are oppositely arranged, a first electrode 101 and an incident light window 100 are led out from the back surface of the single photon avalanche photodiode structure 1, a second electrode 102 is led out from the front surface of the single photon avalanche photodiode structure 1, and a third electrode 103 is further arranged on the front surface of the single photon avalanche photodiode structure 1;
s2, forming an adaptive resistance structure 2 on the front surface of the single photon avalanche photodiode structure 1, wherein one end of the adaptive resistance structure 2 is connected with the second electrode 102, and the other end of the adaptive resistance structure 2 is connected with the third electrode 103;
the self-adaptive resistance structure 2 has a first resistance state and a second resistance state, the resistance of the first resistance state is larger than that of the second resistance state, the self-adaptive resistance structure 2 is in the first resistance state when the single photon avalanche photodiode structure 1 discharges, and the self-adaptive resistance structure 2 is in the second resistance state when the single photon avalanche photodiode structure 1 charges.
In an alternative embodiment of the present invention, the single photon avalanche photodiode structure 1 is a mesa structure, as shown in fig. 6 to 12, the step S1 of forming the single photon avalanche photodiode structure 1 further includes:
s11, as shown in fig. 6, providing a substrate 104, the substrate including a back side and a front side oppositely disposed;
s12, as shown in fig. 6, a buffer layer 105, a multiplication layer 106, a charge layer 107, a gradation layer 108, an absorption layer 109, a cap layer 110, and a contact layer 111 are formed in this order on the front surface of a substrate 104;
s13, as shown in fig. 7, forming a groove T1 and a groove T2, wherein the groove T1 and the groove T2 sequentially pass through the contact layer 111, the cap layer 110, the absorption layer 109, the graded layer 108, the charge layer 107, the multiplication layer 106 and the buffer layer 105 to the substrate 104;
s14, as shown in fig. 8, forming a passivation layer 112, the passivation layer 112 filling the grooves T1 and T2, and the passivation layer 112 being flush with the contact layer 111;
s15, as shown in fig. 9, forming a dielectric layer 113, wherein the dielectric layer 113 covers the passivation layer 112 and the contact layer 111;
s16, as shown in fig. 10, forming a second electrode 102 and a third electrode 103, wherein the second electrode 102 is connected to the contact layer 111 through the dielectric layer 113, and the third electrode 103 is disposed on the dielectric layer 113;
s17, as shown in fig. 11, thinning the substrate 104 from the back side;
s18, as shown in FIG. 11, forming an antireflection film 114 on the back surface of the substrate 104 at the position of the incident light window 100;
s19, as shown in fig. 12, a first electrode 101 is formed on the back surface of the substrate 104, the first electrode 101 being disposed around the antireflection film 114.
In detail, in step S11, the substrate 104 is an InP material with a material concentration of 2 × 10 17 cm -3 The thickness of the substrate 104 is 2 μm to 3 μm.
In detail, in step S12, the buffer layer 105, the multiplication layer 106, the charge layer 107, the graded layer 108, the absorption layer 109, the cap layer 110, and the contact layer 111 are sequentially deposited on the substrate 104 using a metal organic chemical vapor deposition process (MOCVD) or a molecular beam epitaxy process (MBE).
Wherein the buffer layer 105 is InP material with a concentration of 5 × 10 17 cm -3 The thickness of the buffer layer 105 is 0.1 μm to 1 μm; the multiplication layer 106 is InP material with concentration less than 1 × 10 15 cm -3 The thickness of the multiplication layer 106 is 0.8-1.6 μm; the charge layer 107 is InP material with a concentration of 4 × 10 17 cm -3 The thickness of the charge layer 107 is 0.1 to 0.3 μm; the gradient layer 108 is made of InGaAsP material, and the thickness of the gradient layer 108 is 0.05-0.1 μm; the absorption layer 109 is InGaAs (P) material with a material concentration of less than 1 × 10 15 cm -3 The thickness of the absorption layer 109 is 1 μm to 3 μm; the cap layer 110 is InP material with a concentration of more than 1 × 10 18 cm -3 The cap layer 110 has a thickness of 1 μm to 3 μm; the contact layer 111 is InGaAs material with a material concentration greater than 5 × 10 18 cm -3 The thickness of the contact layer 111 is 0.5 μm to 2 μm.
In detail, in step S13, first, ions are used before forming the groove T1 and the groove T2 by etchingA dielectric layer (not shown) is formed on the contact layer 111 by bulk enhanced chemical vapor deposition (PECVD), such as
The SiNx dielectric film) is manufactured into a circular pattern with the diameter of 50 microns through a photoetching process, and etching positions of the grooves T1 and T2 are positioned; secondly, carrying out wet etching along the etching position by adopting non-selective etching solution saturated bromine water, and etching the table top to the substrate 104 to form a groove T1 and a groove T2, wherein the side wall of the groove T1 (or the groove T2) is a smooth and continuous table top; finally, the inner walls of the groove T1 and the groove T2 are cleaned (such as cleaned by acetone and ethanol and washed by water) and dried.
In detail, in step S14, before forming the passivation layer 112, a layer of hexamethyldisilazane is spin-coated on the inner wall surfaces of the grooves T1 and T2 to form a dielectric layer (not shown), then benzocyclobutene (BCB) is coated and filled into the grooves T1 and T2, the mesa is passivated and planarized, and the temperature is gradually raised to 260 ℃ in the nitrogen protection for curing; finally, the residual dielectric layer on the contact layer 111 is removed.
In detail, in step S15, a dielectric layer 113 (e.g., a dielectric layer formed by a pecvd process) is formed
SiNx dielectric film) and the dielectric layer 113 covers the passivation layer 112 and the contact layer 111.
In detail, in step S16, first, the dielectric layer 113 is subjected to photolithography to form electrode holes (e.g., circular holes with a diameter of 20 μm) of the second electrode 102; secondly, preparing a photoresist stripping film, and defining a second electrode 102 and a third electrode 103; thirdly, preparing a TiPtAu metal layer with the thickness of 550nm by adopting a magnetron sputtering process; finally, the peeling adhesive film is removed, and the remaining portion of the TiPtAu metal layer forms the second electrode 102 and the third electrode 103.
In detail, in step S17, the substrate 104 is thinned to 100 μm to 200 μm from the back surface of the substrate 104 by chemical mechanical polishing.
In detail, in step S18, an antireflection film 114 with a wavelength of 1064nm/1550nm is grown and formed on the back surface of the thinned substrate 104 at the position of the incident light window 100.
In detail, in step S19, first, an electrode hole of the first electrode 101 is lithographically and defined; and thirdly, preparing an AuGeNi/Au metal layer by adopting a thermal evaporation process to obtain the first electrode 101 which is arranged around the antireflection film 114 and is connected with the substrate 104.
In an alternative embodiment of the present invention, as shown in fig. 13-15, the step S2 of forming the adaptive resistance structure 2 on the front surface of the single photon avalanche photodiode structure 1 further includes:
s21, as shown in fig. 13, forming an inert metal layer 201 on the dielectric layer 113, wherein the inert metal layer 201 is connected to the second electrode 102;
s22, as shown in fig. 14, forming a metal oxide layer 202 on the inert metal layer 201;
s23, as shown in fig. 15, the diffusion metal layer 203 is formed on the metal oxide layer 202, and the diffusion metal layer 203 is connected to the third electrode 103.
In detail, in step S21, a stripping adhesive film pattern of the inert metal layer 201 is prepared, then an electron beam evaporation process is used to form a TiPt alloy layer with a thickness of 50nm, and finally, an unnecessary portion is stripped off, and the inert metal layer 201 connected to the second electrode 102 is formed on the dielectric layer 113.
In detail, in step S22, a copper film (CuO) is grown on the inert metal layer 201 and subjected to an oxidation treatment, resulting in a metal oxide layer 202 of CuO material.
In detail, in step S23, first, a contact region of 1 μm × 1 μm is etched and defined on the metal oxide layer 202, then, a stripper film pattern of the diffusion metal layer 203 is prepared, then, an AuAg alloy layer having a thickness of 100nm is formed by using an electron beam evaporation process, and finally, an unnecessary portion is stripped off, and the metal oxide layer 202 connected to the third electrode 103 is formed on the metal oxide layer 202.
It should be noted that, as shown in fig. 6 to fig. 12, the manufacturing process of the single photon avalanche photodiode structure 1 with the mesa structure is shown, and the specific structure of the single photon avalanche photodiode structure 1 is not limited thereto, but may also include other optional structures such as a planar structure, and the corresponding manufacturing process changes accordingly, and is not described herein again; in addition, the process sequence of the single photon avalanche photodiode structure 1 and the adaptive resistance structure 2 in the present invention is not limited to this, except for the case that the adaptive resistance structure 2 is formed after the single photon avalanche photodiode structure 1 is formed, the adaptive resistance structure 2 may also be formed in the process of forming the single photon avalanche photodiode structure 1, for example, after the second electrode 102 and the third electrode 103 of the single photon avalanche photodiode structure 1 are prepared, the adaptive resistance structure 2 is continuously prepared on the front side of the avalanche single photon photodiode structure 1, and finally the antireflection film 114 and the first electrode 101 are prepared on the back side of the single photon avalanche photodiode structure 1. The invention does not limit the sequence of partial processes of the single photon avalanche photodiode structure 1 and the self-adaptive resistance structure 2.
In summary, the single photon avalanche photodiode and the manufacturing method thereof provided by the present invention integrate an adaptive resistance structure having a first resistance state and a second resistance state on the single photon avalanche photodiode structure, and can switch back and forth between the first resistance state and the second resistance state through a bias voltage applied at two ends of the adaptive resistance structure, so that the adaptive resistance structure presents the first resistance state with a larger resistance when the single photon avalanche photodiode structure discharges, which is beneficial to rapidly quenching the avalanche current of the single photon avalanche photodiode structure, and presents the adaptive resistance structure presents the second resistance state with a smaller resistance when the single photon avalanche photodiode structure charges, which can greatly shorten the reset time and is beneficial to increasing the maximum count rate of the single photon avalanche photodiode structure in a free running mode.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (10)
1. A single photon avalanche photodiode comprising:
the single photon avalanche photodiode structure comprises a back surface and a front surface which are oppositely arranged, wherein a first electrode and an incident light window are led out from the back surface, a second electrode is led out from the front surface, and a third electrode is also arranged on the front surface;
the self-adaptive resistance structure is arranged on the front surface of the single photon avalanche photodiode structure, one end of the self-adaptive resistance structure is connected with the second electrode, and the other end of the self-adaptive resistance structure is connected with the third electrode;
the self-adaptive resistance structure is provided with a first resistance state and a second resistance state, the resistance of the first resistance state is larger than that of the second resistance state, the self-adaptive resistance structure is in the first resistance state when the single photon avalanche photodiode structure is discharged, and the self-adaptive resistance structure is in the second resistance state when the single photon avalanche photodiode structure is charged.
2. The single photon avalanche photodiode according to claim 1, wherein the single photon avalanche photodiode structure comprises:
a substrate comprising oppositely disposed back and front sides;
a buffer layer disposed on a front surface of the substrate;
a multiplication layer disposed on the buffer layer;
a charge layer disposed on the multiplication layer;
a graded layer disposed on the charge layer;
an absorption layer disposed on the graded layer;
a cap layer disposed on the absorber layer;
a contact layer disposed on the cap layer;
the passivation layer is filled in a groove and is flush with the contact layer, and the groove sequentially penetrates through the contact layer, the cap layer, the absorption layer, the gradual change layer, the charge layer, the multiplication layer and the buffer layer to the substrate;
a dielectric layer disposed on the contact layer and the passivation layer;
the incident light window is arranged on the back surface of the substrate;
the first electrode is arranged on the back surface of the substrate;
the second electrode penetrates through the dielectric layer and is connected with the contact layer;
the third electrode is arranged on the dielectric layer.
3. The single photon avalanche photodiode according to claim 2, wherein said first electrode is a ring electrode, said first electrode being disposed around said entrance window, said entrance window being provided with an antireflection film.
4. The single photon avalanche photodiode according to claim 1 or 3, wherein said adaptive resistance structure comprises:
the inert metal layer is arranged on the dielectric layer and is connected with the second electrode;
a metal oxide layer disposed on the inert metal layer;
and the diffusion metal layer is arranged on the metal oxide layer and is connected with the third electrode.
5. The single photon avalanche photodiode according to claim 4, wherein said inert metal layer comprises titanium and platinum, said metal oxide layer comprises hafnium oxide, tantalum pentoxide and copper oxide, and said diffusion metal layer comprises tantalum, silver and gold.
6. The single photon avalanche photodiode according to claim 4, wherein said inert metal layer has a thickness of 10 to 100nm, said metal oxide layer has a thickness of 5 to 10nm, and said diffusion metal layer has a thickness of 10 to 100 nm.
7. The single photon avalanche photodiode according to claim 6, wherein the resistance of said first resistive state ranges from 500k Ω to 5000M Ω and the resistance of said second resistive state ranges from 100 Ω to 30k Ω.
8. A method of fabricating a single photon avalanche photodiode, comprising:
forming a single photon avalanche photodiode structure, wherein the single photon avalanche photodiode structure comprises a back surface and a front surface which are oppositely arranged, a first electrode and an incident light window are led out from the back surface of the single photon avalanche photodiode structure, a second electrode is led out from the front surface of the single photon avalanche photodiode structure, and a third electrode is further arranged on the front surface of the single photon avalanche photodiode structure;
forming a self-adaptive resistance structure on the front surface of the single photon avalanche photodiode structure, wherein one end of the self-adaptive resistance structure is connected with the second electrode, and the other end of the self-adaptive resistance structure is connected with the third electrode;
the self-adaptive resistance structure is provided with a first resistance state and a second resistance state, the resistance of the first resistance state is larger than that of the second resistance state, the self-adaptive resistance structure is in the first resistance state when the single photon avalanche photodiode structure is discharged, and the self-adaptive resistance structure is in the second resistance state when the single photon avalanche photodiode structure is charged.
9. The method of manufacturing a single photon avalanche photodiode of claim 8, wherein said step of forming a single photon avalanche photodiode structure comprises:
providing a substrate, wherein the substrate comprises a back surface and a front surface which are oppositely arranged;
sequentially forming a buffer layer, a multiplication layer, a charge layer, a gradient layer, an absorption layer, a cap layer and a contact layer on the front surface of the substrate;
forming a groove, wherein the groove sequentially penetrates through the contact layer, the cap layer, the absorption layer, the gradient layer, the charge layer, the multiplication layer and the buffer layer to the substrate;
forming a passivation layer, wherein the passivation layer is filled in the groove and is flush with the contact layer;
forming a dielectric layer, wherein the dielectric layer covers the passivation layer and the contact layer;
forming the second electrode and the third electrode, wherein the second electrode penetrates through the dielectric layer to be connected with the contact layer, and the third electrode is arranged on the dielectric layer;
thinning the substrate from the back side;
forming an antireflection film at the position of an incident light window on the back surface of the substrate;
and forming a first electrode on the back surface of the substrate, wherein the first electrode is arranged around the antireflection film.
10. The method of manufacturing a single photon avalanche photodiode according to claim 8 or 9, wherein said step of forming an adaptive resistance structure on the front side of said single photon avalanche photodiode structure comprises:
forming an inert metal layer on the dielectric layer, wherein the inert metal layer is connected with the second electrode;
forming a metal oxide layer on the inert metal layer;
and forming a diffusion metal layer on the metal oxide layer, wherein the diffusion metal layer is connected with the third electrode.
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Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1131824A (en) * | 1994-11-04 | 1996-09-25 | 佳能株式会社 | Photovoltaic element and method for producing the same |
| CN1802758A (en) * | 2003-05-31 | 2006-07-12 | 哈恩-迈特纳研究所柏林有限公司 | Parameterised semiconductor structure comprising integrated doping channels, method for producing said structure and use thereof |
| US20100065939A1 (en) * | 2007-05-07 | 2010-03-18 | Peter Steven Bui | Thin active layer fishbone photodiode with a shallow n+ layer and method of manufacturing the same |
| WO2012042897A1 (en) * | 2010-10-01 | 2012-04-05 | パナソニック株式会社 | Method for manufacturing non-volatile memory element and nonvolatile memory element |
| CN104465853A (en) * | 2014-12-24 | 2015-03-25 | 中国科学院半导体研究所 | Avalanche photodiode and manufacturing method thereof |
| CN104737304A (en) * | 2012-10-18 | 2015-06-24 | 浜松光子学株式会社 | Photodiode array |
| CN106098836A (en) * | 2016-08-19 | 2016-11-09 | 武汉华工正源光子技术有限公司 | Communication avalanche photodide and preparation method thereof |
| CN111312835A (en) * | 2020-02-19 | 2020-06-19 | 中国电子科技集团公司第四十四研究所 | Single electron transmission avalanche photodiode structure and manufacturing method |
| CN111916526A (en) * | 2020-08-10 | 2020-11-10 | 中国电子科技集团公司第四十四研究所 | Negative feedback type single photon avalanche photodiode and manufacturing method thereof |
| WO2021178434A1 (en) * | 2020-03-04 | 2021-09-10 | The University Of Chicago | Avalanche photodiodes with adaptive quenching of photocurrent |
-
2022
- 2022-06-29 CN CN202210761277.0A patent/CN115064602B/en active Active
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1131824A (en) * | 1994-11-04 | 1996-09-25 | 佳能株式会社 | Photovoltaic element and method for producing the same |
| CN1437270A (en) * | 1994-11-04 | 2003-08-20 | 佳能株式会社 | Photoelectric elements and prosucing method thereof |
| CN1802758A (en) * | 2003-05-31 | 2006-07-12 | 哈恩-迈特纳研究所柏林有限公司 | Parameterised semiconductor structure comprising integrated doping channels, method for producing said structure and use thereof |
| US20100065939A1 (en) * | 2007-05-07 | 2010-03-18 | Peter Steven Bui | Thin active layer fishbone photodiode with a shallow n+ layer and method of manufacturing the same |
| WO2012042897A1 (en) * | 2010-10-01 | 2012-04-05 | パナソニック株式会社 | Method for manufacturing non-volatile memory element and nonvolatile memory element |
| CN104737304A (en) * | 2012-10-18 | 2015-06-24 | 浜松光子学株式会社 | Photodiode array |
| CN104465853A (en) * | 2014-12-24 | 2015-03-25 | 中国科学院半导体研究所 | Avalanche photodiode and manufacturing method thereof |
| CN106098836A (en) * | 2016-08-19 | 2016-11-09 | 武汉华工正源光子技术有限公司 | Communication avalanche photodide and preparation method thereof |
| CN111312835A (en) * | 2020-02-19 | 2020-06-19 | 中国电子科技集团公司第四十四研究所 | Single electron transmission avalanche photodiode structure and manufacturing method |
| WO2021178434A1 (en) * | 2020-03-04 | 2021-09-10 | The University Of Chicago | Avalanche photodiodes with adaptive quenching of photocurrent |
| CN111916526A (en) * | 2020-08-10 | 2020-11-10 | 中国电子科技集团公司第四十四研究所 | Negative feedback type single photon avalanche photodiode and manufacturing method thereof |
Non-Patent Citations (2)
| Title |
|---|
| LUNGHI, TOMMASO 等: "Free-running single-photon detection based on a negative feedback InGaAs APD", 《JOURNAL OF MODERN OPTICS》, vol. 59, no. 17, pages 1481 - 1488 * |
| 蔡建旺, 赵见高, 詹文山, 沈保根: "磁电子学中的若干问题", 物理学进展, no. 02, pages 3 - 33 * |
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