CN115064602B - Single photon avalanche photodiode and method of manufacturing the same - Google Patents
Single photon avalanche photodiode and method of manufacturing the same Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 229910052751 metal Inorganic materials 0.000 claims description 51
- 239000002184 metal Substances 0.000 claims description 51
- 239000000758 substrate Substances 0.000 claims description 45
- 230000003044 adaptive effect Effects 0.000 claims description 42
- 239000000463 material Substances 0.000 claims description 26
- 229910044991 metal oxide Inorganic materials 0.000 claims description 26
- 150000004706 metal oxides Chemical class 0.000 claims description 26
- 238000009792 diffusion process Methods 0.000 claims description 21
- 238000002161 passivation Methods 0.000 claims description 19
- 238000010521 absorption reaction Methods 0.000 claims description 15
- 230000008859 change Effects 0.000 claims description 10
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 7
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 5
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 5
- 239000010936 titanium Substances 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 230000002745 absorbent Effects 0.000 claims description 3
- 239000002250 absorbent Substances 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 3
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 3
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 239000005751 Copper oxide Substances 0.000 claims description 2
- 229910000431 copper oxide Inorganic materials 0.000 claims description 2
- 238000000034 method Methods 0.000 description 20
- 230000008569 process Effects 0.000 description 15
- 238000010791 quenching Methods 0.000 description 8
- 230000000171 quenching effect Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- -1 niCr Inorganic materials 0.000 description 3
- 238000011084 recovery Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910019974 CrSi Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- JGJLWPGRMCADHB-UHFFFAOYSA-N hypobromite Inorganic materials Br[O-] JGJLWPGRMCADHB-UHFFFAOYSA-N 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 238000002366 time-of-flight method Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides a single photon avalanche photodiode and a manufacturing method thereof. The self-adaptive resistance structure with the first resistance state and the second resistance state is integrated on the single photon avalanche photodiode structure, bias voltage applied to two ends of the self-adaptive resistance structure can be switched back and forth between the first resistance state and the second resistance state, the self-adaptive resistance structure presents the first resistance state with larger resistance when the single photon avalanche photodiode structure discharges, avalanche current of the single photon avalanche photodiode structure is favorably quenched rapidly, the self-adaptive resistance structure presents the second resistance state with smaller resistance when the single photon avalanche photodiode structure charges, reset time can be greatly shortened, and maximum counting rate of the single photon avalanche photodiode structure in a free running mode is favorably improved.
Description
Technical Field
The invention relates to the technical field of detector chip manufacturing, in particular to a single photon avalanche photodiode and a manufacturing method thereof.
Background
Single Photon Avalanche Diodes (SPADs) based on semiconductor p-n junctions are attractive as a compact, efficient, room temperature technology for applications including three-dimensional imaging and ranging (e.g., autopilot lidar, gesture recognition, three-dimensional scanning, quantum communication, and medical fluorescence monitoring) using time-of-flight methods. In the application, the SPAD works in a free running mode, the bias voltage is always kept in a Geiger state above the breakdown voltage, and the photon with unknown arrival time can be detected. Once a photon signal is detected, it triggers an avalanche, however the avalanche process is a self-sustaining process and does not actively quench. To prevent the temperature rise from burning out SPAD, a quenching circuit is required to terminate the avalanche multiplication process and reset the device bias voltage.
The passive quenching is the simplest method, and avalanche current is rapidly quenched by integrating a resistor which is large enough and is connected in series with the SPAD, while the prior art generally adopts a resistor with a larger fixed resistance value (such as CrSi, niCr, a-Si and other materials), and long reset time is usually in the range of 1-10 microseconds due to RC delay of charging of the SPAD depletion capacitor. While the junction capacitance and thus the time constant of the RC delay can be reduced by reducing the optical sensing area of the detector, it reduces sensitivity and does not have a significant effect.
Therefore, a technical solution is needed to shorten the reset time and increase the count rate of the single photon avalanche photodiode in the free running mode while maintaining a simple passive quenching structure.
Disclosure of Invention
In view of the above-mentioned drawbacks of the prior art, an object of the present invention is to provide a single photon avalanche photodiode technical solution with integrated adaptive resistors, so as to solve the above-mentioned technical problems.
In order to achieve the above object and other related objects, the present invention provides the following technical solutions.
A single photon avalanche photodiode comprising:
the single photon avalanche photodiode structure comprises a back surface and a front surface which are oppositely arranged, wherein a first electrode and an incident light window are led out of the back surface, a second electrode is led out of the front surface, and a third electrode is also arranged on the front surface;
the self-adaptive resistor structure is arranged on the front surface of the single photon avalanche photodiode structure, one end of the self-adaptive resistor structure is connected with the second electrode, and the other end of the self-adaptive resistor structure is connected with the third electrode;
the self-adaptive resistance structure has a first resistance state and a second resistance state, the resistance of the first resistance state is larger than that of the second resistance state, the self-adaptive resistance structure presents the first resistance state when the single photon avalanche photodiode structure discharges, and the self-adaptive resistance structure presents the second resistance state when the single photon avalanche photodiode structure charges.
Optionally, the single photon avalanche photodiode structure comprises:
a substrate comprising oppositely disposed back and front surfaces;
a buffer layer disposed on a front surface of the substrate;
the multiplication layer is arranged on the buffer layer;
a charge layer disposed on the multiplication layer;
the gradual change layer is arranged on the charge layer;
the absorption layer is arranged on the gradual change layer;
a cap layer disposed on the absorbent layer;
a contact layer disposed on the cap layer;
the passivation layer is filled in the groove and is flush with the contact layer, and the groove sequentially penetrates through the contact layer, the cap layer, the absorption layer, the gradual change layer, the charge layer, the multiplication layer and the buffer layer to the substrate;
the dielectric layer is arranged on the contact layer and the passivation layer;
the incident light window is arranged on the back surface of the substrate;
the first electrode is arranged on the back surface of the substrate;
the second electrode penetrates through the dielectric layer and is connected with the contact layer;
the third electrode is arranged on the dielectric layer.
Optionally, the first electrode is an annular electrode, the first electrode is disposed around the incident light window, and an antireflection film is disposed on the incident light window.
Optionally, the adaptive resistive structure includes:
the inert metal layer is arranged on the dielectric layer and is connected with the second electrode;
a metal oxide layer disposed on the inert metal layer;
and a diffusion metal layer disposed on the metal oxide layer and connected to the third electrode.
Optionally, the material of the inert metal layer at least comprises titanium and platinum, the material of the metal oxide layer at least comprises hafnium oxide, tantalum pentoxide and copper oxide, and the material of the diffusion metal layer at least comprises tantalum, silver and gold.
Optionally, the thickness of the inert metal layer is 10-100 nm, the thickness of the metal oxide layer is 5-10 nm, and the thickness of the diffusion metal layer is 10-100 nm.
Optionally, the resistance of the first resistance state ranges from 500kΩ to 5000mΩ, and the resistance of the second resistance state ranges from 100 Ω to 30kΩ.
A method of manufacturing a single photon avalanche photodiode, comprising:
forming a single-photon avalanche photodiode structure, wherein the single-photon avalanche photodiode structure comprises a back surface and a front surface which are oppositely arranged, a first electrode and an incident light window are led out of the back surface of the single-photon avalanche photodiode structure, a second electrode is led out of the front surface of the single-photon avalanche photodiode structure, and a third electrode is further arranged on the front surface of the single-photon avalanche photodiode structure;
forming an adaptive resistance structure on the front surface of the single photon avalanche photodiode structure, wherein one end of the adaptive resistance structure is connected with the second electrode, and the other end of the adaptive resistance structure is connected with the third electrode;
the self-adaptive resistance structure has a first resistance state and a second resistance state, the resistance of the first resistance state is larger than that of the second resistance state, the self-adaptive resistance structure presents the first resistance state when the single photon avalanche photodiode structure discharges, and the self-adaptive resistance structure presents the second resistance state when the single photon avalanche photodiode structure charges.
Optionally, the step of forming a single photon avalanche photodiode structure includes:
providing a substrate, wherein the substrate comprises a back surface and a front surface which are oppositely arranged;
sequentially forming a buffer layer, a multiplication layer, a charge layer, a gradual change layer, an absorption layer, a cap layer and a contact layer on the front surface of the substrate;
forming a groove which sequentially passes through the contact layer, the cap layer, the absorption layer, the gradual change layer, the charge layer, the multiplication layer and the buffer layer to the substrate;
forming a passivation layer, wherein the passivation layer is filled in the groove and is flush with the contact layer;
forming a dielectric layer, wherein the dielectric layer covers the passivation layer and the contact layer;
forming the second electrode and the third electrode, wherein the second electrode penetrates through the dielectric layer to be connected with the contact layer, and the third electrode is arranged on the dielectric layer;
thinning the substrate from the back side;
forming an antireflection film on the position of an incident light window on the back surface of the substrate;
a first electrode is formed on the back surface of the substrate, the first electrode being disposed around the antireflection film.
Optionally, the step of forming an adaptive resistive structure on the front side of the single photon avalanche photodiode structure includes:
forming an inert metal layer on the dielectric layer, wherein the inert metal layer is connected with the second electrode;
forming a metal oxide layer on the inert metal layer;
and forming a diffusion metal layer on the metal oxide layer, wherein the diffusion metal layer is connected with the third electrode.
As described above, the single photon avalanche photodiode and the method for manufacturing the same provided by the invention have at least the following beneficial effects:
the self-adaptive resistor structure integrated with the single photon avalanche photodiode structure is provided with a first resistor state and a second resistor state, bias voltages applied to the second electrode and the third electrode at two ends of the self-adaptive resistor structure can be switched back and forth between the first resistor state and the second resistor state, the self-adaptive resistor structure is enabled to be in the first resistor state with larger resistance when the single photon avalanche photodiode structure discharges, the rapid quenching of the avalanche current of the single photon avalanche photodiode structure is facilitated, the self-adaptive resistor structure is enabled to be in the second resistor state with smaller resistance when the single photon avalanche photodiode structure charges, the reset time can be greatly shortened, and the maximum counting rate of the single photon avalanche photodiode structure in a free running mode is facilitated to be improved.
Drawings
Fig. 1 is a schematic diagram of a single photon avalanche photodiode integrated with an adaptive resistor in accordance with the present invention.
Fig. 2 is a schematic structural diagram of the adaptive resistor structure 2 in fig. 1.
Fig. 3 is a schematic diagram showing the post-pulse probability of a single photon avalanche photodiode integrated with an adaptive resistor and a single photon avalanche photodiode integrated with a fixed resistance resistor over dead time.
Fig. 4 is a graph of the maximum count rate versus the adaptive resistance of two single photon avalanche photodiodes versus different fixed resistance values.
Fig. 5 is a schematic diagram showing steps of a method for manufacturing a single photon avalanche photodiode with an adaptive resistor integrated therein according to the present invention.
Fig. 6-15 are process flow diagrams of a method of fabricating a single photon avalanche photodiode in accordance with the present invention.
Detailed Description
As mentioned in the foregoing background, for avalanche quenching of single photon avalanche diodes, the inventors have studied to find: at present, a resistor with a larger fixed resistance value is generally integrated to be connected in series with a single photon avalanche diode to realize rapid quenching of avalanche current, however, because of RC delay of depletion capacitor charging in the single photon avalanche diode, a longer reset time is caused, usually in the range of 1-10 microseconds, the extension of the reset time can reduce the counting rate of the single photon avalanche diode, although the junction capacitance can be reduced by reducing the optical sensing area of a detector, and further the time constant of the RC delay is reduced, the sensitivity of the single photon avalanche diode can be reduced, and the time constant reduction effect is not obvious, so that the technical scheme is not preferable.
Based on the above, the invention provides a technical scheme of a single photon avalanche diode integrated with an adaptive resistor, which comprises the following steps: the self-adaptive resistor structure is integrated on the single photon avalanche photodiode structure in series, the self-adaptive resistor structure is provided with a first resistance state and a second resistance state, bias voltage applied to two ends of the self-adaptive resistor structure is switched back and forth between the first resistance state and the second resistance state, the self-adaptive resistor structure is enabled to be in the first resistance state with larger resistance when the single photon avalanche photodiode structure discharges, so that avalanche current of the single photon avalanche photodiode structure is quenched rapidly, and the self-adaptive resistor structure is enabled to be in the second resistance state with smaller resistance when the single photon avalanche photodiode structure charges, so that reset time is shortened, and counting rate of the single photon avalanche photodiode structure is improved.
Other advantages and effects of the present invention will become apparent to those skilled in the art from the following disclosure, which describes the embodiments of the present invention with reference to specific examples. The invention may be practiced or carried out in other embodiments that depart from the specific details, and the details of the present description may be modified or varied from the spirit and scope of the present invention.
Please refer to fig. 1 to 15. It should be noted that, the illustrations provided in the present embodiment merely illustrate the basic concept of the present invention by way of illustration, and only the components related to the present invention are shown in the drawings and are not drawn according to the number, shape and size of the components in actual implementation, and the form, number and proportion of the components in actual implementation may be arbitrarily changed, and the layout of the components may be more complex. The structures, proportions, sizes, etc. shown in the drawings attached hereto are for illustration purposes only and are not intended to limit the scope of the invention, which is defined by the claims, but rather by the claims.
First, as shown in fig. 1, the present invention provides a single photon avalanche photodiode including:
a single photon avalanche photodiode structure 1, which comprises a back surface and a front surface which are oppositely arranged, wherein the back surface leads out an incident light window 100 and a first electrode 101, the front surface leads out a second electrode 102, and a third electrode 103 is also arranged on the front surface;
an adaptive resistive structure 2 disposed on the front surface of the single photon avalanche photodiode structure 1, and having one end connected to the second electrode 102 and the other end connected to the third electrode 103;
the self-adaptive resistance structure 2 has a first resistance state and a second resistance state, wherein the resistance of the first resistance state is larger than that of the second resistance state, the self-adaptive resistance structure 2 presents the first resistance state when the single photon avalanche photodiode structure 1 discharges, and the self-adaptive resistance structure 2 presents the second resistance state when the single photon avalanche photodiode structure 1 charges.
In an alternative embodiment of the present invention, as shown in fig. 1, a single photon avalanche photodiode structure 1 includes:
a substrate 104 comprising oppositely disposed back and front sides;
a buffer layer 105 disposed on the front surface of the substrate 104;
a multiplication layer 106 disposed on the buffer layer 105;
a charge layer 107 disposed on the multiplication layer 106;
a gradation layer 108 provided on the charge layer 107;
an absorption layer 109 disposed on the gradation layer 108;
a cap layer 110 disposed on the absorbent layer 109;
a contact layer 111 disposed on the cap layer 110;
a passivation layer 112 filled in the recess and flush with the contact layer 111, the recess passing through the contact layer 111, the cap layer 110, the absorption layer 109, the graded layer 108, the charge layer 107, the multiplication layer 106 and the buffer layer 105 in this order to the substrate 104;
a dielectric layer 113 disposed on the contact layer 111 and the passivation layer 112;
an incident light window 100 disposed on the back surface of a substrate 104;
a first electrode 101 disposed on the back surface of the substrate 104;
a second electrode 102 connected to the contact layer 111 through the dielectric layer 113;
the third electrode 103 is disposed on the dielectric layer 113.
In detail, as shown in fig. 1, the first electrode 101 is a ring-shaped electrode, the first electrode 101 is disposed around the incident light window 100, and an antireflection film 114 is disposed on the incident light window 100.
Note that, the single photon avalanche photodiode structure 1 shown in fig. 1 is a mesa structure, but the specific structure of the single photon avalanche photodiode structure 1 is not limited thereto, and may include other optional structures such as a planar structure, and is not limited thereto.
In an alternative embodiment of the present invention, as shown in fig. 1-2, an adaptive resistive structure 2 includes:
an inert metal layer 201 disposed on the dielectric layer 113 and connected to the second electrode 102;
a metal oxide layer 202 disposed on the inert metal layer 201;
a diffusion metal layer 203 disposed on the metal oxide layer 202 and connected to the third electrode 103.
Wherein the material of the inert metal layer 201 at least comprises inert metals such as titanium (Ti) and platinum (Pt), and the material of the metal oxide layer 202 at least comprises hafnium oxide (HfO) x ) Tantalum pentoxide (Ta) 2 O 5 ) And dielectric metal oxide such as copper oxide (CuO), and the material of the diffusion metal layer 203 includes at least metals that are easily diffused in the metal oxide such as tantalum (Ta), silver (Ag), and gold (Au); thus, the materials of the three structural layers in the adaptive resistive structure 2 may be specifically: pt/HfO x /Au，Pt/Ta 2 O 5 Ta, tiPt/CuO/AuAg, etc., are not limited herein.
In an alternative embodiment of the present invention, the inert metal layer 201 has a thickness of 10-100 nm, the metal oxide layer 202 has a thickness of 5-10 nm, the diffusion metal layer 203 has a thickness of 10-100 nm, and the adaptive resistive structure 2 has a total thickness of 25-210 nm.
In detail, as shown in fig. 2, the adaptive resistive structure 2 has two states, a first resistive state (high-resistance state) and a second resistive state (low-resistance state), the resistance of the first resistive state is greater than that of the second resistive state, and the bias voltage (voltage difference) applied across the adaptive resistive structure 2 is switched back and forth between the first resistive state and the second resistive state: when the voltage on the third electrode is greater than the voltage on the second electrode, the voltage difference forces the diffusion metal layer 203 to diffuse, so that a part of the metal diffusion layer 203 diffuses into the metal oxide layer 202 to form a conductive channel, the resistance of the adaptive resistance structure 2 is reduced, and the adaptive resistance structure 2 is switched from the first resistance state to the second resistance state; when the voltage on the third electrode is less than or equal to the voltage on the second electrode, the diffusion phenomenon of the diffusion metal layer 203 is almost negligible, the conductive path disappears, the resistance of the adaptive resistive structure 2 increases, and the adaptive resistive structure 2 returns to the first resistive state.
In detail, as shown in fig. 1, based on the adaptive resistance structure 2, the resistance value of the whole single photon avalanche photodiode can be adaptively switched in different working states: when the single photon avalanche photodiode structure 1 discharges, the self-adaptive resistance structure 2 presents a first resistance state with larger resistance, and can quench the avalanche current of the single photon avalanche photodiode structure 1 rapidly; when the single photon avalanche photodiode structure 1 is charged, the self-adaptive resistance junction 2 is in a second resistance state with smaller resistance, so that the reset time can be shortened, and the counting rate of the single photon avalanche photodiode structure 1 can be improved.
In an alternative embodiment of the present invention, the first resistance state has a resistance ranging from 500kΩ to 5000mΩ, and the second resistance state has a resistance ranging from 100 kΩ to 30kΩ.
It should be emphasized that, in the adaptive resistive structure 2, the smaller the contact area between the metal oxide layer 202 at the middle position and the inert metal layer 201 at the bottom position (or the diffusion metal layer 203 at the top position), the smaller the parasitic capacitance, and the shorter the subsequent charge recovery time of the whole single photon avalanche photodiode, but the contact area will affect the final resistance value presented by the adaptive resistive structure 2, so the size of the contact area needs to be considered in a compromise between the design requirement of the resistance value of the adaptive resistive structure 2 and the charge recovery time of the whole single photon avalanche photodiode. In an alternative embodiment of the invention, the contact area may be 0.01 μm 2 ～10000μm 2 。
In an alternative embodiment of the present invention, to verify the technical effect of the single photon avalanche photodiode with the adaptive resistor integrated therein, a comparison experiment of the single photon avalanche photodiode with the adaptive resistor integrated therein and the single photon avalanche photodiode with the fixed resistor integrated therein in the prior art is performed, and the comparison result of the experiment is shown in fig. 3 and fig. 4.
In detail, as shown in fig. 3, the probability of the post pulse with the dead time is compared, the dead time of the single photon avalanche photodiode integrated with the self-adaptive resistor is about 100ns, the probability of the post pulse is already close to the normal value, and the dead time of the single photon avalanche photodiode integrated with the fixed resistance resistor is about 1 μs. It can be seen that the recovery time of the single photon avalanche photodiode integrated with the adaptive resistor is far less than that of the single photon avalanche photodiode integrated with the fixed resistance resistor, and the reset time of the single photon avalanche photodiode is greatly shortened.
In detail, as shown in fig. 4, the maximum count rate of the single photon avalanche photodiode integrated with the adaptive resistor is greatly increased relative to the integrated fixed resistor, while the maximum count rate of the single photon avalanche photodiode integrated with the fixed resistor is gradually decreased as the resistance value increases, and thus, the maximum switch count rate of the single photon avalanche photodiode integrated with the adaptive resistor is significantly increased.
It should be noted that, as shown in fig. 1-2, the adaptive resistor structure 2 is a three-layer structure, but the structure of the adaptive resistor structure 2 is not limited to a three-layer structure, and may be a four-layer structure, a five-layer structure, or the like based on the three-layer structure, for example, an optimal design condition such as adding one buffer layer, a transition layer, or the like may be added, which is not limited herein.
Next, as shown in fig. 5, the present invention also provides a method for manufacturing a single photon avalanche photodiode, which includes the steps of:
s1, forming a single photon avalanche photodiode structure 1, wherein the single photon avalanche photodiode structure 1 comprises a back surface and a front surface which are oppositely arranged, a first electrode 101 and an incident light window 100 are led out of the back surface of the single photon avalanche photodiode structure 1, a second electrode 102 is led out of the front surface of the single photon avalanche photodiode structure 1, and a third electrode 103 is further arranged on the front surface of the single photon avalanche photodiode structure 1;
s2, forming an adaptive resistance structure 2 on the front surface of the single photon avalanche photodiode structure 1, wherein one end of the adaptive resistance structure 2 is connected with a second electrode 102, and the other end of the adaptive resistance structure 2 is connected with a third electrode 103;
the self-adaptive resistance structure 2 has a first resistance state and a second resistance state, wherein the resistance of the first resistance state is larger than that of the second resistance state, the self-adaptive resistance structure 2 presents the first resistance state when the single photon avalanche photodiode structure 1 discharges, and the self-adaptive resistance structure 2 presents the second resistance state when the single photon avalanche photodiode structure 1 charges.
In an alternative embodiment of the present invention, the single photon avalanche photodiode structure 1 is a mesa structure, as shown in fig. 6 to 12, and the step S1 of forming the single photon avalanche photodiode structure 1 further includes:
s11, as shown in FIG. 6, providing a substrate 104, wherein the substrate comprises a back surface and a front surface which are oppositely arranged;
s12, as shown in fig. 6, a buffer layer 105, a multiplication layer 106, a charge layer 107, a graded layer 108, an absorption layer 109, a cap layer 110, and a contact layer 111 are sequentially formed on the front surface of the substrate 104;
s13, as shown in FIG. 7, forming a groove T1 and a groove T2, wherein the groove T1 and the groove T2 sequentially penetrate through the contact layer 111, the cap layer 110, the absorption layer 109, the graded layer 108, the charge layer 107, the multiplication layer 106 and the buffer layer 105 to the substrate 104;
s14, as shown in fig. 8, forming a passivation layer 112, wherein the passivation layer 112 is filled in the grooves T1 and T2, and the passivation layer 112 is level with the contact layer 111;
s15, as shown in fig. 9, a dielectric layer 113 is formed, and the dielectric layer 113 covers the passivation layer 112 and the contact layer 111;
s16, as shown in FIG. 10, forming a second electrode 102 and a third electrode 103, wherein the second electrode 102 is connected with the contact layer 111 through the dielectric layer 113, and the third electrode 103 is arranged on the dielectric layer 113;
s17, as shown in FIG. 11, thinning the substrate 104 from the back side;
s18, as shown in FIG. 11, an antireflection film 114 is formed on the back surface of the substrate 104 at the position of the incident light window 100;
s19, as shown in fig. 12, the first electrode 101 is formed on the back surface of the substrate 104, and the first electrode 101 is disposed around the antireflection film 114.
In detail, in step S11, the substrate 104 is InP material with a material concentration of 2×10 17 cm -3 The thickness of the substrate 104 is 2 μm to 3 μm.
In detail, in step S12, a buffer layer 105, a multiplication layer 106, a charge layer 107, a gradation layer 108, an absorption layer 109, a cap layer 110, and a contact layer 111 are sequentially deposited on the substrate 104 using a Metal Organic Chemical Vapor Deposition (MOCVD) process or a Molecular Beam Epitaxy (MBE) process.
Wherein the buffer layer 105 is made of InP material with a material concentration of 5×10 17 cm -3 The thickness of the buffer layer 105 is 0.1 μm to 1 μm; the multiplication layer 106 is InP material with a material concentration of less than 1×10 15 cm -3 The thickness of the multiplication layer 106 is 0.8 μm to 1.6 μm; the charge layer 107 is an InP material with a concentration of 4×10 17 cm -3 The thickness of the charge layer 107 is 0.1 μm to 0.3 μm; the graded layer 108 is made of InGaAsP material, and the thickness of the graded layer 108 is 0.05-0.1 μm; the absorption layer 109 is of InGaAs (P) material with a material concentration of less than 1×10 15 cm -3 The thickness of the absorption layer 109 is 1 μm to 3 μm; cap layer 110 is InP material with a material concentration greater than 1×10 18 cm -3 The thickness of the cap layer 110 is 1 μm to 3 μm; the contact layer 111 is made of InGaAs material with a material concentration of more than 5×10 18 cm -3 The thickness of the contact layer 111 is 0.5 μm to 2 μm.
In detail, in step S13, first, before etching to form the grooves T1 and T2, a dielectric layer (not shown, for example, a dielectric layer is formed on the contact layer 111 by using an ion-enhanced chemical vapor deposition processThe SiNx dielectric film) of the substrate is manufactured into a circular pattern with the diameter of 50 mu m by a photoetching process, and etching positions of the groove T1 and the groove T2 are positioned; secondly, adopting non-selective etching solution to saturate bromine water, carrying out wet etching along the etching position, etching the table top to the substrate 104 to form a groove T1 and a groove T2,the side wall of the groove T1 (or the groove T2) is a smooth continuous table surface; finally, the inner walls of the grooves T1 and T2 are cleaned (such as by washing with acetone and ethanol) and dried.
In detail, in step S14, before forming the passivation layer 112, a layer of hexamethyldisilazane is spin-coated on the inner wall surfaces of the grooves T1 and T2 to form a dielectric layer (not shown), then benzocyclobutene (BCB) is filled in the grooves T1 and T2, the mesa is subjected to passivation and planarization, and the mesa is cured by gradually heating to 260 ℃ under nitrogen protection; finally, the dielectric layer remaining on the contact layer 111 is removed.
In detail, in step S15, the dielectric layer 113 is formed by an ion-enhanced chemical vapor deposition process (e.g.SiNx dielectric film of (a), dielectric layer 113 covers passivation layer 112 and contact layer 111.
In detail, in step S16, first, the dielectric layer 113 is subjected to photolithography to form an electrode hole (e.g., a circular hole with a diameter of 20 μm) of the second electrode 102; secondly, preparing a photoresist stripping film, and defining a second electrode 102 and a third electrode 103; thirdly, preparing a TiPtAu metal layer with the thickness of 550nm by adopting a magnetron sputtering process; finally, the lift-off film is removed, and the remaining portions of the TiPtAu metal layer form the second electrode 102 and the third electrode 103.
In detail, in step S17, the substrate 104 is thinned to 100 μm to 200 μm from the back surface of the substrate 104 by chemical mechanical polishing.
In detail, in step S18, an antireflection film 114 having a wavelength of 1064nm/1550nm is grown on the back surface of the thinned substrate 104 at the position of the incident light window 100.
In detail, in step S19, first, the electrode hole of the first electrode 101 is lithographically defined; again, a thermal evaporation process is used to prepare an AuGeNi/Au metal layer, resulting in a first electrode 101 disposed around the anti-reflection film 114 and connected to the substrate 104.
In an alternative embodiment of the present invention, as shown in fig. 13-15, the step S2 of forming the adaptive resistive structure 2 on the front surface of the single photon avalanche photodiode structure 1 further comprises:
s21, as shown in FIG. 13, an inert metal layer 201 is formed on the dielectric layer 113, and the inert metal layer 201 is connected with the second electrode 102;
s22, as shown in fig. 14, forming a metal oxide layer 202 on the inert metal layer 201;
s23, as shown in fig. 15, a diffusion metal layer 203 is formed on the metal oxide layer 202, and the diffusion metal layer 203 is connected to the third electrode 103.
In detail, in step S21, a lift-off film pattern of the inert metal layer 201 is first prepared, then an electron beam evaporation process is used to form a 50nm thick layer of the TiPt alloy, and finally, unnecessary portions are lifted off, and the inert metal layer 201 connected to the second electrode 102 is formed on the dielectric layer 113.
In detail, in step S22, a copper film (CuO) is grown on the inert metal layer 201 and subjected to an oxidation treatment to obtain a metal oxide layer 202 of CuO material.
In detail, in step S23, firstly, a contact region of 1 μm×1 μm is etched and defined on the metal oxide layer 202, secondly, a lift-off film pattern of the diffusion metal layer 203 is prepared, and again, an AuAg alloy layer having a thickness of 100nm is formed by an electron beam evaporation process, and finally, unnecessary portions are lifted off, and the metal oxide layer 202 connected to the third electrode 103 is formed on the metal oxide layer 202.
It should be noted that, as shown in fig. 6-12, the manufacturing process of the single photon avalanche photodiode structure 1 with a mesa structure is not limited to this, and the specific structure of the single photon avalanche photodiode structure 1 may also include other optional structures such as a planar structure, and the corresponding manufacturing process changes accordingly, which is not described herein again; in addition, the process sequence of the single photon avalanche photodiode structure 1 and the adaptive resistor structure 2 in the present invention is not limited to this, and besides the case that the adaptive resistor structure 2 is formed after the single photon avalanche photodiode structure 1 is formed, the adaptive resistor structure 2 may be formed during the process of forming the single photon avalanche photodiode structure 1, for example, after the second electrode 102 and the third electrode 103 of the single photon avalanche photodiode structure 1 are prepared, the adaptive resistor structure 2 is continuously prepared on the front surface of the single photon avalanche photodiode structure 1, and finally the antireflection film 114 and the first electrode 101 are prepared on the back surface of the single photon avalanche photodiode structure 1. The invention does not limit the partial process sequence of the single photon avalanche photodiode structure 1 and the self-adaptive resistance structure 2.
In summary, according to the single photon avalanche photodiode and the manufacturing method thereof provided by the invention, the self-adaptive resistance structure with the first resistance state and the second resistance state is integrated on the single photon avalanche photodiode structure, the bias voltage applied at two ends of the self-adaptive resistance structure can be switched back and forth between the first resistance state and the second resistance state, the self-adaptive resistance structure can be enabled to be in the first resistance state with larger resistance when the single photon avalanche photodiode structure discharges, the avalanche current of the single photon avalanche photodiode structure can be quickly quenched, the self-adaptive resistance structure can be enabled to be in the second resistance state with smaller resistance when the single photon avalanche photodiode structure charges, the reset time can be greatly shortened, and the maximum count rate of the single photon avalanche photodiode structure in the free running mode can be improved.
The above embodiments are merely illustrative of the principles of the present invention and its effectiveness, and are not intended to limit the invention. Modifications and variations may be made to the above-described embodiments by those skilled in the art without departing from the spirit and scope of the invention. It is therefore intended that all equivalent modifications and changes made by those skilled in the art without departing from the spirit and technical spirit of the present invention shall be covered by the appended claims.
Claims (5)
1. A single photon avalanche photodiode, comprising:
the single photon avalanche photodiode structure comprises a back surface and a front surface which are oppositely arranged, wherein a first electrode and an incident light window are led out of the back surface, a second electrode is led out of the front surface, and a third electrode is also arranged on the front surface;
the self-adaptive resistor structure is arranged on the front surface of the single photon avalanche photodiode structure, one end of the self-adaptive resistor structure is connected with the second electrode, and the other end of the self-adaptive resistor structure is connected with the third electrode;
the self-adaptive resistance structure has a first resistance state and a second resistance state, the resistance of the first resistance state is larger than that of the second resistance state, the self-adaptive resistance structure presents the first resistance state when the single photon avalanche photodiode structure discharges, and the self-adaptive resistance structure presents the second resistance state when the single photon avalanche photodiode structure charges;
the single photon avalanche photodiode structure includes:
a substrate comprising oppositely disposed back and front surfaces;
a buffer layer disposed on a front surface of the substrate;
the multiplication layer is arranged on the buffer layer;
a charge layer disposed on the multiplication layer;
the gradual change layer is arranged on the charge layer;
the absorption layer is arranged on the gradual change layer;
a cap layer disposed on the absorbent layer;
a contact layer disposed on the cap layer;
the passivation layer is filled in the groove and is flush with the contact layer, and the groove sequentially penetrates through the contact layer, the cap layer, the absorption layer, the gradual change layer, the charge layer, the multiplication layer and the buffer layer to the substrate;
the dielectric layer is arranged on the contact layer and the passivation layer;
the incident light window is arranged on the back surface of the substrate;
the first electrode is arranged on the back surface of the substrate;
the second electrode penetrates through the dielectric layer and is connected with the contact layer;
the third electrode is arranged on the dielectric layer;
the adaptive resistor structure includes:
the inert metal layer is arranged on the dielectric layer and is connected with the second electrode;
a metal oxide layer disposed on the inert metal layer;
a diffusion metal layer disposed on the metal oxide layer and connected to the third electrode;
the material of the inert metal layer at least comprises titanium and platinum, the material of the metal oxide layer at least comprises hafnium oxide, tantalum pentoxide and copper oxide, and the material of the diffusion metal layer at least comprises tantalum, silver and gold.
2. The single photon avalanche photodiode according to claim 1, wherein the first electrode is a ring electrode, the first electrode is disposed around the incident light window, and an anti-reflection film is disposed on the incident light window.
3. The single photon avalanche photodiode according to claim 1, wherein the inert metal layer has a thickness of 10 to 100nm, the metal oxide layer has a thickness of 5 to 10nm, and the diffusion metal layer has a thickness of 10 to 100nm.
4. The single photon avalanche photodiode according to claim 3, wherein the first resistance state has a resistance ranging from 500kΩ to 5000mΩ and the second resistance state has a resistance ranging from 100 Ω to 30kΩ.
5. A method of manufacturing a single photon avalanche photodiode, applied in the manufacture of a single photon avalanche photodiode according to any of claims 1 to 4, comprising:
providing a substrate, wherein the substrate comprises a back surface and a front surface which are oppositely arranged;
sequentially forming a buffer layer, a multiplication layer, a charge layer, a gradual change layer, an absorption layer, a cap layer and a contact layer on the front surface of the substrate;
forming a groove which sequentially passes through the contact layer, the cap layer, the absorption layer, the gradual change layer, the charge layer, the multiplication layer and the buffer layer to the substrate;
forming a passivation layer, wherein the passivation layer is filled in the groove and is flush with the contact layer;
forming a dielectric layer, wherein the dielectric layer covers the passivation layer and the contact layer;
forming the second electrode and the third electrode, wherein the second electrode penetrates through the dielectric layer to be connected with the contact layer, and the third electrode is arranged on the dielectric layer;
thinning the substrate from the back side;
forming an antireflection film on the position of an incident light window on the back surface of the substrate;
forming a first electrode on the back surface of the substrate, the first electrode being disposed around the antireflection film;
forming an inert metal layer on the dielectric layer, wherein the inert metal layer is connected with the second electrode;
forming a metal oxide layer on the inert metal layer;
and forming a diffusion metal layer on the metal oxide layer, wherein the diffusion metal layer is connected with the third electrode.
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Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1131824A (en) * | 1994-11-04 | 1996-09-25 | 佳能株式会社 | Photovoltaic element and method for producing the same |
| CN1802758A (en) * | 2003-05-31 | 2006-07-12 | 哈恩-迈特纳研究所柏林有限公司 | Parameterised semiconductor structure comprising integrated doping channels, method for producing said structure and use thereof |
| WO2012042897A1 (en) * | 2010-10-01 | 2012-04-05 | パナソニック株式会社 | Method for manufacturing non-volatile memory element and nonvolatile memory element |
| CN104465853A (en) * | 2014-12-24 | 2015-03-25 | 中国科学院半导体研究所 | Avalanche photodiode and manufacturing method thereof |
| CN104737304A (en) * | 2012-10-18 | 2015-06-24 | 浜松光子学株式会社 | Photodiode array |
| CN106098836A (en) * | 2016-08-19 | 2016-11-09 | 武汉华工正源光子技术有限公司 | Communication avalanche photodide and preparation method thereof |
| CN111312835A (en) * | 2020-02-19 | 2020-06-19 | 中国电子科技集团公司第四十四研究所 | Single electron transmission avalanche photodiode structure and manufacturing method |
| CN111916526A (en) * | 2020-08-10 | 2020-11-10 | 中国电子科技集团公司第四十四研究所 | Negative feedback type single photon avalanche photodiode and manufacturing method thereof |
| WO2021178434A1 (en) * | 2020-03-04 | 2021-09-10 | The University Of Chicago | Avalanche photodiodes with adaptive quenching of photocurrent |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8766392B2 (en) * | 2007-05-07 | 2014-07-01 | Osi Optoelectronics, Inc. | Thin active layer fishbone photodiode with a shallow N+ layer and method of manufacturing the same |
-
2022
- 2022-06-29 CN CN202210761277.0A patent/CN115064602B/en active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1131824A (en) * | 1994-11-04 | 1996-09-25 | 佳能株式会社 | Photovoltaic element and method for producing the same |
| CN1437270A (en) * | 1994-11-04 | 2003-08-20 | 佳能株式会社 | Photoelectric elements and prosucing method thereof |
| CN1802758A (en) * | 2003-05-31 | 2006-07-12 | 哈恩-迈特纳研究所柏林有限公司 | Parameterised semiconductor structure comprising integrated doping channels, method for producing said structure and use thereof |
| WO2012042897A1 (en) * | 2010-10-01 | 2012-04-05 | パナソニック株式会社 | Method for manufacturing non-volatile memory element and nonvolatile memory element |
| CN104737304A (en) * | 2012-10-18 | 2015-06-24 | 浜松光子学株式会社 | Photodiode array |
| CN104465853A (en) * | 2014-12-24 | 2015-03-25 | 中国科学院半导体研究所 | Avalanche photodiode and manufacturing method thereof |
| CN106098836A (en) * | 2016-08-19 | 2016-11-09 | 武汉华工正源光子技术有限公司 | Communication avalanche photodide and preparation method thereof |
| CN111312835A (en) * | 2020-02-19 | 2020-06-19 | 中国电子科技集团公司第四十四研究所 | Single electron transmission avalanche photodiode structure and manufacturing method |
| WO2021178434A1 (en) * | 2020-03-04 | 2021-09-10 | The University Of Chicago | Avalanche photodiodes with adaptive quenching of photocurrent |
| CN111916526A (en) * | 2020-08-10 | 2020-11-10 | 中国电子科技集团公司第四十四研究所 | Negative feedback type single photon avalanche photodiode and manufacturing method thereof |
Non-Patent Citations (2)
| Title |
|---|
| Free-running single-photon detection based on a negative feedback InGaAs APD;LUNGHI, Tommaso 等;《Journal of modern optics》;第59卷(第17期);1481-1488 * |
| 磁电子学中的若干问题;蔡建旺, 赵见高, 詹文山, 沈保根;物理学进展(第02期);3-33 * |
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