CN1802758A - Parameterised semiconductor structure comprising integrated doping channels, method for producing said structure and use thereof - Google Patents
Parameterised semiconductor structure comprising integrated doping channels, method for producing said structure and use thereof Download PDFInfo
- Publication number
- CN1802758A CN1802758A CNA200480015110XA CN200480015110A CN1802758A CN 1802758 A CN1802758 A CN 1802758A CN A200480015110X A CNA200480015110X A CN A200480015110XA CN 200480015110 A CN200480015110 A CN 200480015110A CN 1802758 A CN1802758 A CN 1802758A
- Authority
- CN
- China
- Prior art keywords
- layer
- composite construction
- semiconductor
- parameter
- tempos
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 190
- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 239000002131 composite material Substances 0.000 claims abstract description 83
- 239000011248 coating agent Substances 0.000 claims abstract description 46
- 238000000576 coating method Methods 0.000 claims abstract description 46
- 238000005530 etching Methods 0.000 claims abstract description 37
- 230000005855 radiation Effects 0.000 claims abstract description 33
- 239000004020 conductor Substances 0.000 claims abstract description 29
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical class C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 claims abstract description 28
- 239000011148 porous material Substances 0.000 claims abstract description 27
- 239000002800 charge carrier Substances 0.000 claims abstract description 25
- 229910003472 fullerene Inorganic materials 0.000 claims abstract description 23
- 230000001105 regulatory effect Effects 0.000 claims abstract description 10
- 239000000126 substance Substances 0.000 claims abstract description 10
- 230000005012 migration Effects 0.000 claims abstract description 9
- 238000013508 migration Methods 0.000 claims abstract description 9
- 239000000463 material Substances 0.000 claims description 120
- 238000010276 construction Methods 0.000 claims description 81
- 239000000758 substrate Substances 0.000 claims description 79
- 150000002500 ions Chemical class 0.000 claims description 71
- 238000009413 insulation Methods 0.000 claims description 64
- 229910052710 silicon Inorganic materials 0.000 claims description 48
- 239000010703 silicon Substances 0.000 claims description 47
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 44
- 238000000034 method Methods 0.000 claims description 38
- 230000008859 change Effects 0.000 claims description 29
- 239000007789 gas Substances 0.000 claims description 27
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 20
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 19
- 239000003990 capacitor Substances 0.000 claims description 17
- 239000011810 insulating material Substances 0.000 claims description 17
- 238000009826 distribution Methods 0.000 claims description 16
- 230000005611 electricity Effects 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 16
- 238000012545 processing Methods 0.000 claims description 14
- 210000005239 tubule Anatomy 0.000 claims description 14
- 230000015572 biosynthetic process Effects 0.000 claims description 11
- 150000001875 compounds Chemical class 0.000 claims description 11
- 239000012212 insulator Substances 0.000 claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 229910003460 diamond Inorganic materials 0.000 claims description 8
- 239000010432 diamond Substances 0.000 claims description 8
- 230000010355 oscillation Effects 0.000 claims description 8
- 230000003287 optical effect Effects 0.000 claims description 7
- 239000002159 nanocrystal Substances 0.000 claims description 6
- 229910021387 carbon allotrope Inorganic materials 0.000 claims description 5
- 230000002950 deficient Effects 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 230000000295 complement effect Effects 0.000 claims description 4
- 238000011049 filling Methods 0.000 claims description 4
- 229920002120 photoresistant polymer Polymers 0.000 claims description 4
- 229920000642 polymer Polymers 0.000 claims description 4
- 239000004642 Polyimide Substances 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 238000005452 bending Methods 0.000 claims description 3
- 230000012010 growth Effects 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 239000002070 nanowire Substances 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229920001721 polyimide Polymers 0.000 claims description 3
- 235000010489 acacia gum Nutrition 0.000 claims description 2
- 238000005229 chemical vapour deposition Methods 0.000 claims description 2
- 239000002808 molecular sieve Substances 0.000 claims description 2
- 229920000128 polypyrrole Polymers 0.000 claims description 2
- 150000003377 silicon compounds Chemical class 0.000 claims description 2
- -1 silicon oxynitride Chemical class 0.000 claims description 2
- URGAHOPLAPQHLN-UHFFFAOYSA-N sodium aluminosilicate Chemical compound [Na+].[Al+3].[O-][Si]([O-])=O.[O-][Si]([O-])=O URGAHOPLAPQHLN-UHFFFAOYSA-N 0.000 claims description 2
- 229920000084 Gum arabic Polymers 0.000 claims 1
- 239000000205 acacia gum Substances 0.000 claims 1
- 229910052798 chalcogen Inorganic materials 0.000 claims 1
- 150000001787 chalcogens Chemical class 0.000 claims 1
- 229910044991 metal oxide Inorganic materials 0.000 claims 1
- 150000004706 metal oxides Chemical class 0.000 claims 1
- 230000001419 dependent effect Effects 0.000 abstract description 3
- 230000005693 optoelectronics Effects 0.000 abstract description 3
- 239000012777 electrically insulating material Substances 0.000 abstract description 2
- 230000001953 sensory effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 116
- 230000006870 function Effects 0.000 description 33
- 230000000694 effects Effects 0.000 description 20
- 230000004888 barrier function Effects 0.000 description 12
- 238000005516 engineering process Methods 0.000 description 12
- 238000005259 measurement Methods 0.000 description 12
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 11
- 239000002105 nanoparticle Substances 0.000 description 11
- 238000000151 deposition Methods 0.000 description 10
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 9
- 230000008569 process Effects 0.000 description 9
- 229910052709 silver Inorganic materials 0.000 description 9
- 239000004332 silver Substances 0.000 description 9
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 8
- 230000008021 deposition Effects 0.000 description 8
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 7
- 230000008901 benefit Effects 0.000 description 7
- 238000002347 injection Methods 0.000 description 7
- 239000007924 injection Substances 0.000 description 7
- 230000005865 ionizing radiation Effects 0.000 description 7
- 230000035945 sensitivity Effects 0.000 description 7
- 238000004088 simulation Methods 0.000 description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 239000004411 aluminium Substances 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 229910052799 carbon Inorganic materials 0.000 description 6
- 230000005669 field effect Effects 0.000 description 6
- 230000006698 induction Effects 0.000 description 6
- 239000011159 matrix material Substances 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- 239000011800 void material Substances 0.000 description 6
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 230000003321 amplification Effects 0.000 description 5
- 238000004891 communication Methods 0.000 description 5
- 230000008878 coupling Effects 0.000 description 5
- 238000010168 coupling process Methods 0.000 description 5
- 238000005859 coupling reaction Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- 239000001257 hydrogen Substances 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 230000005291 magnetic effect Effects 0.000 description 5
- 238000003199 nucleic acid amplification method Methods 0.000 description 5
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 239000012071 phase Substances 0.000 description 5
- 230000002441 reversible effect Effects 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical group F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 238000011161 development Methods 0.000 description 4
- 230000018109 developmental process Effects 0.000 description 4
- 230000002349 favourable effect Effects 0.000 description 4
- 230000001976 improved effect Effects 0.000 description 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 4
- 230000005622 photoelectricity Effects 0.000 description 4
- 230000004044 response Effects 0.000 description 4
- 239000000523 sample Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 230000007704 transition Effects 0.000 description 4
- 101710158075 Bucky ball Proteins 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
- 239000004793 Polystyrene Substances 0.000 description 3
- 238000013459 approach Methods 0.000 description 3
- 238000005253 cladding Methods 0.000 description 3
- 239000000084 colloidal system Substances 0.000 description 3
- 230000001143 conditioned effect Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 3
- 239000012776 electronic material Substances 0.000 description 3
- 239000002360 explosive Substances 0.000 description 3
- 239000000945 filler Substances 0.000 description 3
- 239000012530 fluid Substances 0.000 description 3
- 230000004907 flux Effects 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- 238000004020 luminiscence type Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 238000005036 potential barrier Methods 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 230000001052 transient effect Effects 0.000 description 3
- 229910052720 vanadium Inorganic materials 0.000 description 3
- 206010034972 Photosensitivity reaction Diseases 0.000 description 2
- 241000700605 Viruses Species 0.000 description 2
- 229910003481 amorphous carbon Inorganic materials 0.000 description 2
- 238000009529 body temperature measurement Methods 0.000 description 2
- JJWKPURADFRFRB-UHFFFAOYSA-N carbonyl sulfide Chemical compound O=C=S JJWKPURADFRFRB-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 239000003792 electrolyte Substances 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 238000007667 floating Methods 0.000 description 2
- 125000005842 heteroatom Chemical group 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- XZWYZXLIPXDOLR-UHFFFAOYSA-N metformin Chemical compound CN(C)C(=N)NC(N)=N XZWYZXLIPXDOLR-UHFFFAOYSA-N 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000002090 nanochannel Substances 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 230000036211 photosensitivity Effects 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 229920000548 poly(silane) polymer Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 229910021426 porous silicon Inorganic materials 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 229910052714 tellurium Inorganic materials 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 241000894006 Bacteria Species 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 241000196324 Embryophyta Species 0.000 description 1
- 102000004190 Enzymes Human genes 0.000 description 1
- 108090000790 Enzymes Proteins 0.000 description 1
- 241000233866 Fungi Species 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 241000220317 Rosa Species 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 229910052770 Uranium Inorganic materials 0.000 description 1
- 239000001785 acacia senegal l. willd gum Substances 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 125000003158 alcohol group Chemical group 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- JRBRVDCKNXZZGH-UHFFFAOYSA-N alumane;copper Chemical compound [AlH3].[Cu] JRBRVDCKNXZZGH-UHFFFAOYSA-N 0.000 description 1
- 230000003698 anagen phase Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 239000004566 building material Substances 0.000 description 1
- XQPRBTXUXXVTKB-UHFFFAOYSA-M caesium iodide Chemical compound [I-].[Cs+] XQPRBTXUXXVTKB-UHFFFAOYSA-M 0.000 description 1
- DVRDHUBQLOKMHZ-UHFFFAOYSA-N chalcopyrite Chemical compound [S-2].[S-2].[Fe+2].[Cu+2] DVRDHUBQLOKMHZ-UHFFFAOYSA-N 0.000 description 1
- 229910052951 chalcopyrite Inorganic materials 0.000 description 1
- 239000003610 charcoal Substances 0.000 description 1
- 230000019771 cognition Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000011258 core-shell material Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000013016 damping Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 239000000806 elastomer Substances 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 230000005686 electrostatic field Effects 0.000 description 1
- 238000004146 energy storage Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 230000010358 mechanical oscillation Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- GDOPTJXRTPNYNR-UHFFFAOYSA-N methyl-cyclopentane Natural products CC1CCCC1 GDOPTJXRTPNYNR-UHFFFAOYSA-N 0.000 description 1
- 238000005065 mining Methods 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 239000003345 natural gas Substances 0.000 description 1
- 230000006855 networking Effects 0.000 description 1
- 239000002581 neurotoxin Substances 0.000 description 1
- 231100000618 neurotoxin Toxicity 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen(.) Chemical compound [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000008447 perception Effects 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 108090000623 proteins and genes Proteins 0.000 description 1
- 102000004169 proteins and genes Human genes 0.000 description 1
- 238000013139 quantization Methods 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 210000002345 respiratory system Anatomy 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 239000011265 semifinished product Substances 0.000 description 1
- 230000035807 sensation Effects 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- GOLXNESZZPUPJE-UHFFFAOYSA-N spiromesifen Chemical compound CC1=CC(C)=CC(C)=C1C(C(O1)=O)=C(OC(=O)CC(C)(C)C)C11CCCC1 GOLXNESZZPUPJE-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000009182 swimming Effects 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000002341 toxic gas Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 239000002912 waste gas Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
- G01N27/129—Diode type sensors, e.g. gas sensitive Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02203—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being porous
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02258—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by anodic treatment, e.g. anodic oxidation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/60—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation in which radiation controls flow of current through the devices, e.g. photoresistors
- H10K30/65—Light-sensitive field-effect devices, e.g. phototransistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
- H10K85/211—Fullerenes, e.g. C60
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/311—Phthalocyanine
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02115—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material being carbon, e.g. alpha-C, diamond or hydrogen doped carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H01L21/0214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Nanotechnology (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Electrochemistry (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Electromagnetism (AREA)
- Inorganic Chemistry (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Thin Film Transistor (AREA)
- Weting (AREA)
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
Abstract
Known parameterised semiconductor composite structures operate in a monofunctional manner. To obtain the greatest degree of flexibility and maximise its universal applicability, the inventive parameterised semiconductor composite structure (TEMPOS) has nanoscalar pores (VP) acting as doping channels and a high-ohmic coating of electrically conductive material (ECM), which also extends between the pores (VP), on the surface of the layer (EIL) that consists of an electrically insulating material. An electric resistance is generated, said resistance supporting the vertical migration of additional charge carriers into the semiconductor composite structure (PSC) but preventing horizontal migration between the equilateral electrodes (o, w). Fundamental parameters for regulating the function of the semiconductor composite structure (TEMPOS), which can also comprise a differentially negative resistance behaviour (NERPOS), relate to the configuration of the pores (VP) and the electrically conductive material (ECM). Preferably, the pores (VP) can be created by ion irradiation and subsequent etching, the etching duration determining the pore depth and pore diameter. The conductive material (ECM) preferably consists of conductive nanoclusters (DNP) or moisture-sensitive fullerenes (MOSBIT). Areas of application for the invention include electronic, optoelectronic, hygroscopic electronic and sensory semiconductor components with active and passive, thermal, resistive, capacitive, frequency-dependent, chemical and/or radiation-resistant behaviour and an analogue or digital configuration.
Description
The parameter that the present invention relates to have at least one Semiconductor substrate is determined the semiconductor composite construction, this Semiconductor substrate has selectable p and mixes or n doping and conductive capability and adjacent planar layer, this plane layer is made of the material with the integrated doped channel of perpendicular of electric insulation, electric conducting material with selectable conductive capability is placed in the raceway groove, wherein charge carrier moves in the semiconductor composite construction, this composite construction also has the electric contact structure (Kontakierung) that is made of a plurality of electrodes that are provided with on the layer that is made of electrical insulating material and Semiconductor substrate, the invention still further relates to method and its application of being used for its manufacturing.
The semiconductor composite construction of realizing in modem semi-conductor devices is indispensable in daily life.All be applied in their most of equipment in data processing, communication, multimedia and daily life.The microminiaturization of the semiconductor device in integrated circuit has realized that the computer of today communicates by letter with modern data.In addition, the semiconductor composite construction is that high-velocity electrons and optoelectronics develop.And the microminiaturization of the semiconductor composite construction of development also causes new effect.Because have the small size of the structure of several nanometers, the direct quantization of the charge carrier in these structures can be observed.
Disclose different semiconductor composite constructions in the prior art, they can be classified according to its simple function.One big class has constituted field effect transistor FET, and they are identified with " J " for compound under the situation of semiconductor composite construction.(" floating ") control source electrode-drain current on this one or more grid voltages control ground or indefinitely.Has only a current path.The gate electrode with the nanometer gate form that embeds in source electrode-drain channel can improve the JFET function.
JFET with improved mutual conductance is disclosed in US-PS 5 359 214, wherein on silicon substrate, deposited the other silicon layer (" epitaxial loayer ") of other doping, it comprises the silicon raceway groove of conduction as hole (Poren), and wherein all holes all are positioned on the identical current potential.Therefore the semiconductor composite construction that wherein relates to (the n N-type semiconductor N/p N-type semiconductor N that has hole) or (the p N-type semiconductor N/n N-type semiconductor N that has hole) type.The hole lining is only realized by the commentaries on classics doping (Umdotierung) of backing material and epitaxial film materials.The principal direction of electric charge induction is in the distribution in the radial direction towards hole.Stretch into silicon layer by hole, though the mutual conductance change is big, yet conductor cross-section is reduced on the other hand, and has improved hole resistance equally thus.The purpose of the hole in the semiconductor composite construction of the disclosure is to open or close at the source electrode-drain channel of the conduction in the silicon by induction by space charge induction, in the hole environment.Also disclose a kind of JFET among the US-PS 5 111 254, its charge carrier punctures (" avalanche breakdown ") and is modified.The structure that in the semiconductor composite construction of the disclosure, relates to (dielectric substrate/semiconductor that has hole) type.Thus, hole is used as in the semiconductor channel of " grid that floats " introducing conduction.Described a kind of JFET in US-PS 4 482 907 at last, wherein the influence of gate electrode should be modified by the little tubular prolongation in its source electrode-drain channel of extremely conducting electricity.Relate to the structure of (dielectric substrate/semiconductor that has hole) type at this.Therefore hole is introduced into as control medium (Steuermittel) in the source electrode-drain channel of conduction of semiconductor layer.
In second largest based semiconductor composite construction, different electric devices such as diode, capacitor or resistance, and are positioned on the identical current potential by in parallel simply thus with number arbitrarily.This semiconductor composite construction shows as a matrix and is positioned at wherein conducting element, particularly nano wire (Nanodrahte).When between matrix and nano wire, also having a thin insulating barrier, then obtain capacitor.When matrix is n type conduction and nm-class conducting wire when being the semiconductor (perhaps opposite) of p type conduction, then work as diode in the interface between matrix and nm-class conducting wire.This can be converted by in simple FET gate electrode being set.
This conception of species is disclosed with the form of nanometer synthetic (Nanokomposit) in US 2002/0192441 A1, and it is made by electric conducting material is introduced in the porous material.By pure electric contact structure is set, should realize different functions, yet wherein have only the nano-structured thin layer of a single electrical activity.Particularly inorganic semiconductor lead is embedded in the matrix that is made of other organic semiconductor (type of organic substrate/inorganic hole).In described FET, source electrode one drain channel is used as a plurality of parallel silicon pin designs.The preferred orientations of the pin of conduction is not illustrated, yet all should there be a continuous electrical connection to external electrode in each zone of nanometer synthetic.US 2003/0057451 A1 discloses a kind of photoelectric device in addition, should make full use of electroluminescence and luminescence generated by light therein.In a kind of manufacture method of costliness, the nanoneedle of identical appearance is come out by etching from silicon substrate for this reason, and wherein all silicon pins work as diode connected in parallel and have identical current potential.Wherein, at the etching process that is used for making the silicon pin, the insulating barrier that at first deposits on silicon substrate has only satisfied temporary transient miscellaneous function.Possible has afterwards only realized silicon pin embedding insulating barrier at the defencive function that pollutes and destroy.Disclose in US-PS 5 705 321 at last, the nm-class conducting wire that is made of silicon in the quantum structure in cycle, Nanosurface and other nanostructure are for example made for laser.Wherein used the lithographic method that comprises interference technique and engraving method.US 6,201 291 B1 disclose a kind of composite construction in addition, and it is at the SiO of electric insulation
2Have in the layer and be arranged on conductive traces on the semiconductor body, metal (Leitspuren).Yet this layout just is electrical connection service different, that be integrated in the device in the semiconductor body.At this, be integrated in SiO
2Diffusion barrier in the layer is used for stoping carrier mobility to enter semiconductor body especially.Finally disclose a kind of similar semiconductor composite construction in WO 02/08900 A2, in this structure, the lead track is applied in the electric insulation layer that is arranged on the semiconductor body equally.Here, lead track pure ohm of also just being used for being integrated in the electronic circuit of semiconductor body connects.Vertical connection for a plurality of circuit plane also discloses similar structure.
In the 3rd based semiconductor composite construction, designed different transducers.Wherein the responsive material of induction is embedded in the matrix of insulation.This lamination layer structure is open (referring to H.L ü th and other people publication I " Biochemical sensors withstructured and porous silicon capacitors " in the field of biology sensor, material science and engineering B69-70 (2000) 104-108, perhaps M.J.Sch ning and other peoples' publication II " Recent advances inbiologically field-effect transistors (BioFETs) ", Analysts, 2002,127,1137-1151).In these publications, on the principle traditional transistor notion (for example FET) is interconnected, they have different pH value (ion selectivity FET=ISFET) just by inserting the addition thereto in a kind of electrolyte by it and distinguish mutually with traditional notion in gate electrode in this electrolyte.For the purpose of transducer, the silicon of porous is used in transistor in these transducers, and its mesopore is not directly used.Exactly, the surface of porous silicon is by with SiO
2And Si
3N
4Cover, form a capacitor arrangement thin, that be folded (semiconductor-insulator-semiconductor type) so in this way, it has very large surface.At Si
3N
4The surface on the material that deposits for example biological nature changed its surface charge.By this method, under fixing voltage, the electric capacity of capacitor increases.This increase or directly measured perhaps is used to trigger traditional FET.The hole that is arranged in backing material (Si) thus is not used in charge carrier injection or extraction in disclosed structure.Transducer based on the aluminium oxide of porous is disclosed among the US2002/0118027 A1 in addition.The aluminium oxide of porous has very high void density, and high temperature resistant.Otherwise it is very responsive for alkalescence and acidity, and this has limited the possibility that sensor material deposits in hole, and has forbidden the availability in non-neutral liquid to a great extent.The aluminium oxide of porous is very frangible in addition, and a firm substrate must be arranged in abominable application like this.In order to change resistance an integrated small-sized thermistor can be set.Transducer is just driven by resistive ground.In order to make transducer, disclose equally among US 6 278 231 B1 by in the combination of the different materials of hole inside and make Al
2O
3In nanoaperture.And designed simple resistor sensor construction with simple surfaces contact at this.
Disclose the transducer that is used to detect magnetic radiation among the DE-PS 33 37 049, it is made of the solid with anisotropic conductive features.Wherein the characteristic of the solid of whole insulation all is changed and produces maximum anisotropy in one direction conductively by the high radiation dose that is used for phase transition.Must use a kind of very special unbodied insulator that is rich in metal thus, it is destroyed in this wise along ion trajectory, makes that metallic atom is discharged partly.By annealing, they are assembled subsequently.
Described the semiconductor composite construction that the silicon substrate that mixed by the p with adjacent silicon dioxide layer constitutes among these external DE 101 21 011 A1, vertical doped channel is integrated in this silicon dioxide layer as position wire contact (Bitleitungskontakte) with the form of the contact hole that links up.Contact hole is filled up with a kind of metal, and the electronics in this silicon substrate can move like this.The parameter of disclosed semiconductor structure is determined to be undertaken by the injection of mixing.In order to realize semiconductor device, for example DRAM is provided with the contacting that has electrode that is not continued to illustrate.By this disclosed semiconductor composite construction, only realized simple ohmic contact.Other semiconductor device particularly has these semiconductor components and devices of other physical function, can not be implemented.Also have all other by disclosed, the similar semiconductor structure that is implemented of prior art, be inflexible about its structure, building material and design aspect, between single semiconductor structure, have big inconsistency and difference like this.Equally also be applicable to corresponding method of manufacture.
Task of the present invention thus is that further structure begins the definite semiconductor structure of parameter that part is described type in this wise, makes about constructable semiconductor device and very big flexibility and the versatility of its physical function aspect existence.At this, in all semiconductor components and devices that can form, the semiconductor composite construction texturally remains consistent and has as far as possible little difference at it.And the semiconductor composite construction still should be able to be simply and make as far as possible at an easy rate, and this also is applicable to preferred manufacture method.The semiconductor components and devices of being constructed should only have inappreciable difference subsequently in its essential structure.The solution of this aspect task illustrates in main claim.Preferred manufacture method according to the definite semiconductor structure of parameter of the present invention provides in claim to a method.Favourable form of implementation illustrates in the corresponding dependent claims.Preferably being applied in of determining according to parameter of the present invention in the application rights requirement of semiconductor structure provides at last.
Though disclose a series of semiconductor composite constructions (seeing above-mentioned) that have with the similar outward appearance of the present invention in the prior art, yet their the functional different in principle implication that has shown the corresponding structure structure.As illustrating below, big flexibility in semiconductor structure, in accordance with the present invention and generality do not realize in disclosed structure.
In semiconductor composite construction according to the present invention, only to determine to realize about the flexibility that will reach of the realization of components and parts by the parameter of new construction, big consistency appears between attainable components and parts by this method.Wherein notion " parameter is determined (Parametrierung) " should be understood that the selectable setting of the different parameters of structure.Semiconductor composite construction according to the present invention can be widely used in the basic layout as unified raw material.By the structural parameters of inside, as the optional setting of bed thickness and substrate doping, can cause known effect.By the number and the configuration of electrode, different components and parts also can be with the form of electrical couplings, and for example the multilevel logic components and parts are designed.The selection of the voltage that passes through to be applied, the electric current of input or ambient temperature can be set up according to the indicatrix of semiconductor composite construction of the present invention and the working point of part as the parameter that applies of outside.Each point or each hole in semiconductor composite construction according to the present invention all have different current potentials.In the present invention, the important parameter that the functional characteristic of semiconductor composite construction according to the present invention is had a significant impact especially shows as the geometric configuration and the distribution of the coating of hole and conduction.This influence even be stretched over physical function according to semiconductor composite construction of the present invention, electronics so not only, and characteristic photoelectricity and/or sensation can be displayed, and do not lose according to the big consistency of semiconductor composite construction of the present invention.Conclusively in parameter is determined be that (vertical conductive capability is than horizontal conductive capability high at least 10 by the material function anisotropic conductive characteristic given, that manifest strongly that constitute, that be equipped with the hole of vertical conduction and heterogeneous thus anisotropic layer of electric insulation all the time
6) be set up.Wherein anisotropy can be intrinsic or manually apply.
When semiconductor composite construction according to the present invention is called as " TEMPOS " structure, the meaning that parameter is determined can also be emphasized that wherein TEMPO is the acronym of title " Tunable ElectronicMaterial with Pores On Semiconductors ".From this title, can clearly be seen that; hole in electric insulation layer (special oxide skin(coating)) (" Tracks " in ion trajectory or the English) is new things basically in the TEMPOS structure; by them, charge carrier can be extracted by the substrate under being arranged in it (special silicon) or inject wherein.Functional characteristic flexibly, the particularly switching characteristic of TEMPOS structure displays by the application of this charge carrier except the charge carrier that is affected of traditional semiconductor composite construction, additional especially, wherein Fu Jia charge carrier not only can be complementary charge carrier, and can be the charge carrier of same type.Realized that wherein additional charge carrier invention constitutionally in the TEMPOS structure is not only from hole but also particularly also from the surface of the layer of the electric insulation between single hole and to the migration on this surface.At this according to the present invention, be provided with the coating that constitutes by the material that conducts electricity equally, yet this coating is owing to material self or by its inducible high resistance that distributes, between electrode, show enough big resistance, make the additional migration of only mentioning to some extent just may be implemented, and the short circuit between electrode is prevented reliably.The low resistive that substitutes on described surface will cause the short circuit between electrode, and like this, the TEMPOS structure can only realize as diode or the extremely limited function of transducer.In contrast, low resistive in hole is an acceptable, wherein enforceable function directly depends on the definite order of magnitude of the resistance of formation: when enough hour of resistance, can cause a kind of opposite characteristic of semiconductor, it also occurs when having very large diameter showing when hole.On the other hand, under very little hole resistance situation, produce direct short circuit between surface and conductive substrates, surface potential directly is coupled with the current potential of conductive substrates by hole like this.When sheet resistance was bigger than resistance substrate, this was a normal condition, and then the electric work of TEMPOS structure can realize passing through the function of the controlled resistance of base contact so basically only by the resistance substrate decision at this.
Except the advantage of determining for the parameter widely of the TEMPOS structure that realizes maximum application flexibility, also there is extraordinary radiation hardness (advantage of Strahlungsh rte).Therefore by components and parts manufactured in the TEMPOS structure is the radioresistance influence.When one be rich in the particle of energy, for example from the narrow oxide surface of the particle penetration FET structure of the part of the high energy of cosmic ray or solar wind, then it is along the track of an electric charge of its motion path generation, and the path of this electric charge is electrical conductivity thus.May occur thus puncturing, these puncture and may damage transistor owing to very high streaming current and the temperature peak that links therewith.Therefore for space travel, in reactor, military affairs or high-energy environment (for example bullet train), research emphasizes to improve diode and transistorized radiation resistance.The conductive path (typically about 10 that forms at the multiple hole that covers with electric conducting material, be passed in the TEMPOS structure dielectric layer that the material by electric insulation constitutes
7/ cm
2) original existence in the reason of radiation resistance as can be seen, single like this, other radiation-induced path does not cause basic change.Though the Ion paths of the temporary transient TEMPOS structure than the filling that has its high resistant in this new path more can be conducted electricity significantly, works as the electric current gauge automatically yet have its superficial layer high-resistance, additional, that conduct electricity, short circuit current is prevented from like this.Small and the temporary transient change of the I-E characteristic that unique visible effect is components and parts.Naturally work as this breakdown events and cause long short circuit, then this means, small change described, in characteristic exists for a long time.Because by " buffering " of internal circuit that is connected generation of the many high resistants in surface and hole, the important shortcoming of traditional structure has been avoided reliably.
In the present invention, the forming of coating that is made of the material of the high resistant of the conduction between hole internally and outwardly provides a series of different parameters to use, and they have determined the functional characteristic of TEMPOS structure.Wherein in order to realize predetermined electric potential relation, the distribution of material plays an important role.According to applicable cases and surely, the material of conduction can have continuous or structurized distribution smooth or island shape or some shape, wherein also may be to mix shape.Therefore can stipulate advantageously that the material of conduction is configured and is placed in the hole with selectable minute bulk density with nanocluster (Nanoclustern) form with selectable size, and be applied on the layer that constitutes by electrical insulating material.At this, nanocluster can (polydispersion) be deposited with bunch-bunch distance that changes in vast quantitative range.Because its each different size arranges and distance that this " has erased " the actual quantum electronic effect of being expected in the nanocluster interface, can observe like this " classical " electronic effect.Predetermined electric potential relation can be provided with simply by its distribution.Distance bigger between these bunches causes big Ohmic resistance each other, and this has prevented flowing through of short circuit current especially, and high cluster density has determined to have the low resistance of high charge density, and this can realize the best migration of charge carrier.Therefore parameter in the application of cluster is its size, its combination and its distribution.Wherein different parameters to the influence of the functional characteristic of TEMPOS structure for the professional person be understand easily and may in different application, realize.
When all nanoclusters of material of conduction all are positioned at identical selected magnitude range, form and have the coating of characteristic especially uniformly.Monodispersed and equidistant nanocluster also can be introduced in conversion ground in the track of TEMPOS structure He on the surface, the quantum effect in each single track is all clearly visible and be superimposed upon on the indicatrix of classics like this.By monodispersed phenotype, the even distribution of cluster can not have the opposite to realize simply contiguously, so can cause corresponding characteristic uniformly yet.The nanocluster that is classified subsequently works as the parallel chain that is made of quantum dot along course bearing, and produce step-like I-E characteristic, these characteristics are by being determined in that the conductive capability of the dual potential barrier structure of the resonance tunnel of considering coulomb blockade effect and single electronics is theoretical.Thus, significantly expanded based on the application kind of the components and parts of TEMPOS structure.
As the metal-doped porphyry molecule of also having of nanoparticle (Porphyren-Molek ü le), they are monodispersed on its size distribution, and are more or less arranged equidistantly in etched ion trajectory.Whether do not decide ground there to be metal not paired or that have not paired spin to be doped on these molecules, the resistance of this nanocluster chain has different temperature dependencies.In first situation, resistance rises with temperature linearity ground, and in second situation, it descends at first soon, rises then and faintly.Produce the temperature dependent possibility that another works out the TEMPOS structure thus.
Cluster can be made relatively simply, and can be changed simply in its size and combination.As in the method for making monodispersed and equidistant nanocluster on the smooth ion trajectory surface and on the ion trajectory surface in inside, for example have:
● make the structure of self-organizing, they can be realized by the interaction between moistening and nonwetting liquid (for example monomer, polymer solution etc.)
● deposit the colloidal solution of monodispersed golden cluster
● (monodispersed relatively-7 ± 3nm's) CuO in the deposition liquid phase
2Nanocluster
● with the deposited iron nanoparticle of clocklike arranging
● deposition is by Pd
561Ni
nThe orderly lead that core-shell particle constitutes
● gas phase deposit gold under low-down (liquid nitrogen-) temperature; The coating that has organic film that has the front
Except nanoparticle, in hole, can also construct the nanometer tubule (Baji-tube) that constitutes by fullerene (Fullerenen), wherein preferably, the nickel nanocrystal is used as plumule and is applied on the Semiconductor substrate of being exposed the front with electroplating, and growing nano tubule in etched ion trajectory thereon.Wherein the nanometer tubule preferably is not from arc discharge, but by other technology, for example from plasma, be deposited, with the deposition that reduces additional amorphous carbon layer and can realize this plasma structure, nanometer tubule deposition is preferably carried out in etched ion trajectory.But wherein the nanometer tubule can grow out from hole according to the mode of fluffing (Haaren).TEMPOS structure with the Baji-tube that is integrated not only has common TEM-POS characteristic, and the machinery and the characteristic electron of the nanometer tubule that also has been coupled thus.For example each motion of nanometer tubule all can cause the electric capacity of whole components and parts to change, and this can be used to switching process.Can for example measure the most small acceleration and air-flow (for example using) thus as the probe in the human respiratory system; These components and parts can be used as the nanometer balance and use (for example being used for virus, protein etc.), and wherein each nanometer tubule is used as the balance beam use.If tubule covers at local insulated body, then can determine electrostatic field thus; The part that is made of magnetic material covers the transducer that then these components and parts can be become magnetic field.
In ion trajectory, also can introduce the nm-class conducting wire that constitutes by selenium, tellurium or other material.The mechanical alteration of flexible lead can be obtained as electronic signal by capacitive coupling.Particularly advantageous at this is that Se and Te are piezoelectricity.
Be applicable to the material of the sufficiently high conduction of any resistance for coating.Under the situation of too high intrinsic conduction ability, if for example this material will cause short circuit in directly using, as metal, then conductive capability can on purpose be reduced, make that this material is not same quality, but be deposited with the cluster or the pipe of dispersion disconnected from each other on the space.Subsequently the conductive capability of this material by Schottky emission, wear tunnel or similar fashion is caused, and hang down the order of magnitude of Duoing very much than the original conductive capability in homogeneity applies.Wherein particularly advantageously be, the material of this conduction is a kind of metal (for example silver, tungsten, copper or aluminium copper) of dispersed and distributed, semiconducting compound (for example III/V family semiconductor such as GaAs or II/IV family semiconductor such as CdS), carbon allotrope (as diamond, graphite, class graphitic carbon, amorphous carbon and fullerene (bucky-ball and Baji-tube)), the semiconductor of oxide (ZnO for example, TiO
2, SnO), the oxide of conduction (for example ITO (indium tin oxide)) or a kind of mixed form wherein.Iron content fluid (Ferrofluide) can use owing to the colloid structure of the conduction of difference on its electricity.Particularly silver can be deposited and can provide a large amount of additional charge carriers for using simply with the cluster form.The mixed form of different metals combines the good characteristic of single component.Under the enough little situation of conductive capability, under the promptly sufficiently high resistance situation, substitute the electric conducting material of the cluster form of dispersed and distributed, also can use the layer that runs through of very high-resistance material such as fullerene.
In addition, the coating that is made of the material that conducts electricity also plays an important role to the function shaping of semiconductor structure, in accordance with the present invention.Wherein the material of this conduction can be by replenishing or substitute a kind of special material, the particularly material with conductive capability to moisture and vapor sensitive (sensoraktiv), the inducing function of TEMPOS structure can be formed like this, has opened up the whole new set of applications field for the TEMPOS structure thus.By for example in the formation of metal coating or ITO coating, by with sensor material-this also may be in the additional materials and with any mixed form of electric conducting material combination-or replenish to the replacement of electric conducting material, suitable environmental impact can be so that the direct change of the on off state of TEMPOS structure, and need not the circuit that for this reason also will add.Can give an example at this:
A) make the coating of the conduction that constitutes by discrete palladium (Pd)-nanocrystal: because the Ohmic resistance of Pd depends on the hydrogen concentration of injection, so the TEMPOS structure is converted into hydrogen sensor.Its medium sensitivity can also be improved by layer of polycarbonate ionizing radiation and etched by deposition, because it has the characteristic to the hydrogen sensitivity equally.Hydrogen sensor for example has application possibility in the Hydrogen Energy holder.
B) by bucky-ball fullerene (C
60) application that constitute, high-resistance, conductive cladding: because C not only
60Ohmic resistance, and the electric capacity of Fullerene layer all depends on ambient moisture, temperature and light radiation, so the TEMPOS structure can for example become moisture detector, hygrosensor, alcohol detector, acetone detector and/or photodetector by using fullereneization.At this, the major part of these single parameters not only can be separated ground, and can side by side be detected, because they can be based on the different influence of corresponding part characteristic is differentiated mutually.Additionally also may be at this with corresponding components and parts as voltage source (photocell, " humidity battery ", " organic batteries ") use because it is illumination is gone into after or after the charging, by humidity or organically gas set up about+0.5V or-voltage of 0.5V.
C) equally also may, the conductive capability of fullerene coating by ionizing radiation partly or fully from n type conductor to the conversion of p type conductor, and foundation and the on purpose adjustment of characteristic by additional pn knot of TEMPOS structure like this.The temperature sensor of combination and humidity sensor be in industry and family, in wet environment, be applied in many Electrical and Electronics instrument and the machine very much, for example at washing machine, air conditioner, water pump, aboard ship, in swimming pool, chemical plant or the like.
D) application of the coating of the high-resistance conduction that constitutes by carbon nanometer tubule (" Baji-tube "): because the layer of the felt shape that constitutes by Baji-tube in its mechanical deformation not only resistance but also electric capacity all be changed, so may be in pressure sensor, acoustic sensor and movable sensor with the TEMPOS structure applications at this.This transducer for example is applied in vacuum technique and high pressure technique, sound equipment industry, medicine and auto industry.Because Baji-tube also may use as transistor or photophore, thus this with the combination of TEMPOS structure in other application in addition.
E) in the coating of conduction, inject not by radiation or by the phthalocyanine of radiation (Ptc) layer.The TEMPOS structure can be used as the transducer of alcohol, methane, natural gas and similar substance with deciding and uses on the planning of Ptc layer thus.In gas industry, application possibility is all arranged from mining phase to family's stage.
F) coat the inwall of ion trajectory etched, longer, that tilt to inject as hole (referring to hereinafter) with electron multiplication material such as cesium iodide (C siumjodid).Etched thus ion trajectory can be used as photoelectric multiplier and use, and can make up the multi-channel amplifier dish with corresponding TEMPOS structure like this, and wherein whole dimension is with respect to scaled one or two order of magnitude of present commercially available commodity.The electronics that occurs by the etched ion trajectory to the substrate (silicon passage) of conduction is clustered in the electronic impulse that is converted into simulation in the affiliated components and parts circuit, and it can be used as the radiation detector use like this.Significant size reduces for the satellite application in the cosmic space and meaningful especially for portable system.In the requirement that can reduce as the mean free path length electronics in the ion trajectory of electron multiplication passage, that reduce owing to littler size affiliated vacuum system, this has caused further cost savings and weight to reduce.In addition, the duration of electronic impulse is reduced in the picosecond range thus, can realize express measurement electronic equipment by this new detector type like this.
G) add the induction raw material with the form that is closed (verkapseln).When these contacts are also sealed well simultaneously, according to the transducer of making of the present invention also in liquid medium, for example like reaching good function in the solution of water.Thus, application can significantly be enlarged.
H) in etched track, inject to embed (fluessigkeitseingebetteten) the iron content fluid of fluid or magnetic nanometer particles as hole.Because in ion trajectory, ferromagnetic colloid becomes chain or more the connection and the orientation thereof of the shape of higher-dimension depend on the magnetic field that the outside applies sensitively, this causes the ohmic and capacitive change according to semiconductor composite construction of the present invention from its that aspect, might construct novel magnetic sensor at this.Yet still must be closed in this case, by the ion trajectory of liquid filling.This for example can realize by covering wax nanoparticle layer outwardly and then it being melted into isolated film continuous, sealing.Because the little thickness of wax layer has guaranteed the enough capacitive current couplings in low frequency operation in this case at least.
I) with exciter material (Aktuator-Material), for example lead zirconate titanate, PZT, foam of polymers (Ploymersch umen), elastomer and liquid crystal (nematisch) gel-filled ion trajectory and the surface that covers the TEMPOS structure to row.Relate generally to piezoelectric at this, they for example can be according to the Sol-Gel method or from gas phase (for example by vapor deposition or similar approach) precipitated.By introducing the exciter material in the hole and placing on the surface, the input signal based on the components and parts of TEMPOS structure directly can be converted on the one hand the distortion or the motion (for example being converted to sound) (perhaps reverse conversion) of machinery, the exciter layer also can be realized pressure or voice signal are converted to electronic signal on the other hand.At this, the advantage of the combination of exciter and TEMPOS structure is the ability of TEMPOS structure, because its complexity, it works as dielectric object between different physical quantitys, so that carry out so direct conversion, for example from sound to light, from light to pressure, from temperature to motion, from humidity to distortion, from sound to modulated radio frequency or similar conversion, and synchronous signal is continued to handle all the time electronically.
J) in addition, but the conductive cladding that is used for identification chemistry, biological and medical science of switch and defence transducer is interesting for safe practice particularly, and these transducers can be integrated in the components and parts with TEMPOS structure that parameter determines in a similar fashion.Corresponding coating itself also can have very high resistance, and this has expanded the selection of admissible material significantly.For example can in track, add MoO from solution as sensor material
3-polypyrrole compound, it is as for multiple waste gas, for example for the transducer of formaldehyde resin (Formaldehyd), methyl alcohol, ethanol.Can in hole, embed (thermoresponsible) gel of thermal response in addition.Be customized the adjustable ability in ground based on it, promptly under critical temperature, expand, it can stop the function of TEMPOS structure up to a definite critical temperature by the dead-end pore in this way to a certain extent, and only just makes it movable on this temperature.This transducer can be for example as flame detector and be used for household equipment and use.Combine with suitable exciter, can make the siren or the similar products of miniaturization by this way.
K) by the parallel right sensors material that uses in components and parts common, that have the TEMPOS structure, can be not only with ohmic but also measure predetermined measuring amount (for example temperature, pressure, humidity, light or chemical substance) simultaneously with capacitive approach.In the prior art (referring to the publication III " Dualamperometric-potentiometric biosensor detection system for monitoringorganophosphorus neurotoxins " of J.Wang etc., Analytica Chimica Acta 49 (2002) 197-203) a kind of resistive or capacitive measurement with conversion of two kinds of different measurement configurations only disclosed, in these configurations, two kinds of measurement approach that separate compare mutually under requiring, to realize better response sensitivity by overlapping thus.Hole can have about 10 with what be made of Arabic gum and chromic salts in addition
-6The synthetic of the conductive capability of S/cm is filled.
The working method that has on the principle of the biology sensor TEMPOS structure, possible that parameter determines for example can followingly be carried out.Special fluorescence molecule, for example be combined in that this is structural, (konjugiert) that give birth to polymeric light suppressed by the molecule of determining that is integrated (" quencher (Quencher) ").If suitable biomolecule, a for example antibody contact with quencher, then they interosculate and together discharge fluorescence molecule, and this molecule begins luminous subsequently.By in selection for the fluorescence molecule in the laminated suitable wave-length coverage of electric insulation, and by using special silicon oxynitride layer (being referred to below as " SiON "), the luminescence generated by light of SiON is utilized, the light that has begun like this to be reinforced is launched, and it has further improved biological detection sensitivity.Photronic gross efficiency correspondingly improves.But after the detection of success, this sensor type must be activated again by connecting new quencher molecule.For the realization in components and parts with TEMPOS structure, in SiON the etched ion trajectory in taper ground recommend bigger external diameter (＞＞1um) within it can the combined with fluorescent molecule on the wall, and can temporarily lean on thereon in the inner biomolecule of its cell association (Zellverbandes).The structure that the taper of track is stretched plays a part so on the other hand, and promptly to the boundary face of substrate layer, for example silicon, the fluorescence that is generated is concentrated, and can realize high luminous efficiency like this.
In order to survey biological weapons, and be employed making up the identical notion of TEMPOS structure as biology sensor ,-difference is that corresponding quencher must be customized on corresponding virus, bacterium, the fungi etc.At explosive weapon, the TEMPOS structure can be used as " artificial nose " and use.At this, the characteristic of the explosive that all are common all is utilized, because it has the metastable organonitrogen compound of high-load and at room temperature has certain steam pressure all the time, can be proved to be by its emitted exhaust products on their principles like this.Promptly when the TEMPOS structure is equipped with corresponding a, emitted exhaust products and is connected to receiver on it, and have enough the significantly change of its electrical characteristic (for example resistance, dielectric constant, polarity, state of charge) in aspect that at it at this receiver, then can correspondingly make explosive detector.Poison gas also is suitable for identical principle.In all cases, in order to improve reaction sensitivity, correspondingly the TEMPOS structure of revising with receiver can be set to it on this best working point.This working point is usually located at the border in such zone, uses local negativity differential resistor (face as follows) in this zone.Subsequently, the very little change of the operating voltage that causes owing to the existence of weapon material can be passed characteristic in the negativity zone of part, and the result produces very large signal like this.
Set out from the foregoing description, the parameter group of second largest class is also clear.Relate to the size and the distribution of the hole in electric insulation layer at this.Also have except the distribution density pore diameter, hole that can change enter the degree of depth (hole can penetratingly or as " basic hole " structure) and hole profile (hole can be column type or also can be that taper ground stretches) to the layer.Be clear that for the professional person the corresponding planning by these parameters can produce different respectively transition relationships, they can cause the different in principle function of composite construction.The parameter of other of TEMPOS structure is arranged in the scope and the Semiconductor substrate of electric insulation layer.According to another kind of invention form of implementation, advantageously, electrical insulating material is a kind of silicon compound, particularly silicon oxynitride, perhaps a kind of carbon allotrope or a kind of condensate, particularly photoresist or polyimides.Wherein SiON demonstrates the special photoluminescence property of having referred to especially, and this launches owing to electroluminescence causes powerful light in application.Belong to the fullerene that also has of carbon allotrope, it can be doped in special mode, and the layer of diamond layer and diamond like carbon.Photoresist or polyimides have provided traditional insulating barrier early, but they can be constructed simply.According to next invention expansion scheme, Semiconductor substrate can be the silicon of rare oxygen or cut krousky-silicon (Czochralski-Silizium) in addition.Particularly its high compensation ability for oxygen is significant in the latter.Substrate can correspondingly be doped according to the function regulation in addition.
Yet the material of many coating that form as the high resistance ground of conduction in the TEMPOS structure and/or void filler use is not only for a physical-chemical amount, and all has sensor characteristics for wherein many.Thus may be very difficult under suspicious situation, will belong to definite source clearly by the electrical signal that the single TEMPOS structure in components and parts is sent.In this case, according to following a kind of invention expansion scheme advantageously, that different parameters is determined, particularly the zone about the selection of electric conducting material is adjacent to be arranged on the common Semiconductor substrate, these zones cover various scope of different physical-chemical amounts respectively.Thus, a plurality of TEMPOS structures with different coating settings can be compared as transducer use and its signal simultaneously mutually.Wherein it is also important that, note the symbol of corresponding sensor-signal.The coating (Bel ge) of combination can be provided with corresponding assessment electronics, forms Multifunction Sensor (" artificial sense ") so in this way, and they can simultaneously and have the gamut that high reliability ground covers different physical-chemical amounts.A simple example is the TEMPOS structure with silver-colored cluster layer, and they are light activated.Relative therewith, but the TEMPOS structure of Fullerene layer with high value of conduction is responsive for light, humidity, alcohol and acetone steam, wherein humidity causes positive signal, and light and organic vapor cause negative signal on the contrary.When a fullerene TEMPOS structure, promptly a MOSBIT structure provides a negative signal, and when a silver-colored cluster TEMPOS structure did not provide signal simultaneously, then the source can be defined as organic vapor clearly, gets rid of light incident as reason.If opposite, then in two transducers, be assumed to be light incident assuredly in the response; Additionally exist organic vapor also possible now, but do not be sure of.The a kind of the 3rd, at this transducer of mentioning for relatively purpose, for example have the TEMPOS structure of SnO coating, can be used for determining ratio.When it responds, then also there is alcohol vapor except light incident.In addition may be with other parameter, for example void density, by change regionally.
Other parameter is the configuration in the structure of the lip-deep conductive cladding of the layer that is made of electrical insulating material.Wherein to mention such form of implementation especially, wherein the coating between two surface contact is fully disconnected, like this conduction that runs through between two surface contact connect can only by near the interface of the layer that constitutes by electrical insulating material, conducting channel buried in Semiconductor substrate provides.This raceway groove passes the ion trajectory ground Be Controlled of remaining surface coating and conduction.Also relate to the structure that can move in this shaping, its characteristic curve is consumingly similar in appearance to the general-purpose diode characteristic curve, and can be moved by applying a grid voltage.That this mode is constructed, outstanding so that very strong photosensitivity to be arranged based on the components and parts of TEMPOS structure.Under the radiation at sunshine, it, is not hidden with respect to light incident in this buried conducting channel major part because different with most of traditional TEMPOS structures optically blocking direction with regard to conducting electricity very doughtily, but expose to the open air.According to the working point and surely, they can use these structures as light resistance or as optical diode or photocell, different with traditional light-sensitive element, their respond can be passed through the grid voltage Be Controlled that applied.
The another one parameter is the material of the dielectric layer on Semiconductor substrate.Not only can consider silicon dioxide, silicon oxynitride, diamond, polymer or the like as the insulating material on Semiconductor substrate (generally being silicon), and also have Woelm Alumina (Al
2O
3).For this reason, aluminium for example can be applied on the Silicon Wafer by sputtering sedimentation, and this layer is subsequently by the oxidation of anode ground.In the oxidation of aluminium, grow a kind of well-regulated material of arranging with extremely parallel hole, its representative diameter is 20nm to 200nm.When aluminium is exhausted on the silicon, this Al
2O
3Growth stops.In this case, no longer need ion subsequently to inject and etching process.Yet Al
2O
3Hole be not through to Semiconductor substrate; Also have remaining aluminium lamination and thin al oxide layer thereon.Because the latter can be used as tunnel barrier and works, so it is not necessarily harmful, but on the contrary may be just in time be useful for the generation of the quantum electronic devices and components (seeing below) on the basis of TEMPOS structure.In the hole of aluminium oxide, can as usually, introduce different materials again.Though can bear very high treatment temperature to this, yet can not bear the medium of acidity or alkalescence, because they can decomposing oxidation aluminium.In addition, at Al
2O
3The for example Baji-tube of can growing in the hole, it can be used as transducer or similar device uses (seeing above).
Substitute SiO with the etched ion trajectory that is introduced into
2Layer or SiON layer also can deposits so-called " molecular sieve " on semi-conducting material, the silicon dioxide of for example mesoporous (mesopores), and it comprises the regular pattern that is made of the wide hole of 2.7nm.(partly) material of conduction can be introduced in these nano-channels, for example passes through electro-plating method.Whether according to nano-channel can (by in conjunction with corresponding organic membrane) be networked or can not surely, be formed nm-class conducting wire or nano-pearl chain (" nanometer necklace ") by networking, and they have the different parameters dependence of its conductive capability.On principle, porphyry (Porphyrene) also can be used for this reason.
In this external definite structural arrangement; particularly under the situation of narrow relatively pore diameter, metal cluster or chalcopyrite (Chalkopyrit) cluster (for example Ag nanoparticle or CdS nanoparticle), in the hole of the layer that constitutes by electrical insulating material and lip-deep TEMPOS structure have local instability's property of its I-E characteristic.This effect may be that the consequence of quantum electronic effect and usually launching with light is coupled.This unsteadiness can be used as slight noise and noticeable, and this noise sounds on certain current strength.Be made of the little spike in characteristic at this noise, they tend to littler voltage under higher electric current.Sometimes the spike of these in I-E characteristic shows by force especially at certain point.This is the very close characteristic of characteristic a kind of and Esaki diode or tunnel diode.At last, also on a definite critical voltage, it is big that electric current significantly becomes, and do not settle out on a higher value.Electrorheological is accompanied by the reduction to a certain degree of voltage greatly, and components and parts have a negativity differential resistor very strong, that occur like this.In the working point that is provided with by direct voltage or direct current in electronic circuit, though resistance is positive, when little (difference) voltage rose, electric current still descended.For fraction overlapping alternating current or alternating voltage, corresponding components and parts work as a little negativity resistance.These have local negativity differential resistor, can be based on the structure of hole rightly with acronym: " NERPOS " (" NEgative Resistance of Pores in Oxide onSemiconductors ") expression.Each structure with local negativity differential resistor can be used to make up for example amplifier, the trigger that uses and oscillator publicly in digital technology.Because on market, mainly have only Esaki diode or common tunnel diode so far as components and parts, so these application facet also are retained so far with negativity resistance.This field also can be had the active NERPOS components and parts developing of nanoparticle now.
The other parameter of TEMPOS structure is the electrode profile.In basic the layout, in two positions on the surface of TEMPOS structure and a position overleaf be provided with electrode and be used for contact.Like this Gou Zao semiconductor composite construction can be used as subsequently based on the TEMPOS structure, determine that according to parameter the components and parts can adjust function are used.In addition about arrangement of electrodes possible be that the field effect-transistor notion of classics is combined with the notion of TEMPOS structure.For this reason must be only a source electrode (Source-Elektrode) and drain electrode (Drain-Elektrode) be set again at the upper surface of TEMPOS structure.These electrodes can directly be set on the Semiconductor substrate that is doped on the one hand, and its mode is at first layer adjacency, that be made of electrical insulating material, that have high value coating (for example nanocrystal of fullerene or dispersion) to be removed there.Yet as in the FET transistor, this requires additionally to mix in source electrode contact structures and drain electrode contact structures, so that form a conductive region there in semiconductor.In the time of in source electrode and the drain electrode ion trajectory by high conduction in the layer that constitutes at the material by electric insulation, thin directly is integrated into based on the components and parts of TEMPOS structure, this expense can be avoided, because the induction by the intrinsic charge carrier in oxide skin(coating) of silicon boundary layer becomes has conducted electricity.By mentioned combination, the characteristic of two components and parts can be unified valuably.Electric current from source electrode to drain electrode can be controlled as control electrode by each of three primary electrode v, w and/or o (grid) like this.Also influence source electrode-drain current in capacitive character or ohmic change based on the layer of the high resistant conduction of the upper surface of the components and parts of TEMPOS structure.Conversely, can influence the TEMPOS characteristic by the charge carrier injection of source electrode or drain electrode.This can realize the very structure of complicated logic circuits in single components and parts.
In addition, hole in the layer that is made of electrical insulating material, that fill with semiconductive or electric conducting material is also adjacent with layer thin, electric insulation, can form tunnel barrier like this, and the nano-component of quantum electronics can obtain based on tunnel effect.Wherein Bao insulator layer can be made by different way.
After the surface etching of the ion trajectory that runs through in the layer that constitutes by electrical insulating material, the Semiconductor substrate, for example silicon that in ion trajectory, are exposed, oxidized under the temperature and time of determining, forming an oxidation film extremely thin, that determine thickness in the zone at ion trajectory on the substrate surface like this, thickness is typically between 1nm and 5nm.Under more farm labourer in normal atmosphere did, the Semiconductor substrate that the quilt in the bottom of etched ion trajectory exposes can be converted into enough thick oxide skin(coating) by the erosion process of nature.Substitute on Semiconductor substrate and produce thin insulator layer by oxidation; whole etched ion trajectory can also cover with 1 to 5nm thick insulator film, and this for example can be by being undertaken by the deposition of the resist of poly-how dicarboxylate (PAN), polymethyl methacrylate (PMMA), polystyrene (PS) or similar material formation.In addition, ion trajectory in the layer that is made of electrical insulating material (dielectric) can not run through and is etched to Semiconductor substrate, but etching process is stopped in the time will running through, between track tip and Semiconductor substrate, leave the distance (" basic hole hole ") of about 1nm to 5nm like this.This distance can be controlled by the measurement of the electric capacity between the ion trajectory of Semiconductor substrate and etched dose of filling in etching process.As other manufacturing replacement scheme, this dielectric also can be configured double-deckly, the thick layer of 1nm to 5nm that wherein is located on the Semiconductor substrate is difficult to etched (for example being made of silicon oxynitride SiON), and position layer thereon, significantly thicker is (for example by SiO
2Constitute) easier etching.Stop when arriving the boundary layer by the track etching process of weak etchant subsequently, formation has the etched track of the residue insulator layer before the Semiconductor substrate like this.
Next, the hole of the structure of making is like this filled with electric conducting material.This material can be high value or low resistance.The surface of this structure with the electric conducting material of high resistant be capped-preferably to cover, if it is a high value with identical materials in etched track.The use of the material of good conductive causes other current/voltage characteristic.The selected resistance of visual material and surely, structure can have different characteristic electrons thus.Contact can be carried out in an identical manner by two contacts and the contact of the reverse side on silicon (R ü ckontakt) on the surface of structure, as cross described in the different components and parts of TEMPOS structure.When the conductor that embeds is made of nanocrystal that disperse, (partly) conduction, had other manufacturing possibility in etched ion trajectory.Nanocrystal can be insulated layer and surround (nucleocapsid structure) before being filled to ion trajectory, next they can directly not contact with Semiconductor substrate conductively like this.In this case, in track, can not make up tunnel layer.When making up basic hole hole (seeing above), the conduction nanocluster, for example by ion deposition be integrated between hole and the Semiconductor substrate, that constitute by electrical insulating material, remaining run through the layer in the time, the structure of tunnel layer also can be omitted.Form a tunnel barrier respectively in the above and below of nanocluster subsequently about position hole thereon.By this measure, the structure of single electron transistor (SET) can be integrated in the TEMPOS structure.In this way, the characteristic of each single track becomes clearly manyly, like this, can fundamentally be duplicated better based on the overall permanence of the components and parts of TEMPOS structure.This is specially adapted to have TEMPOS components and parts negativity, differential resistor.In this case, the control of traditional grid is born by the Combination Control of the contact by two existence.
In this case, when promptly layer is made of a kind of electrical insulating material that is made of diamond or polysilane (Polysilanen), (ion trajectory has an intrinsic conductive capability like this, promptly no longer need fill with electric conducting material), can only use double-deck dielectric (1nm to the 5nm SiO for making
2, SiON photoresist or similar material) and (constituting) thicker layer by diamond, polysilane or similar material.After heavy ion radiation, the ion trajectory of double-deck layer has structure: (SiO
2, SiON or similar material)/(comprise sp
2Carbon, SiC or similar material), therefore constitute by the thin insulator film between the ion trajectory of the conductivity of Semiconductor substrate and difference.
So by different way at the thin insulator layer of Semiconductor substrate and the 1nm to 5nm that between the conducting channel that makes up on the Semiconductor substrate, introduced as the raceway groove potential barrier.Its theory discloses many decades; Over about ten years, they become the focus of electronics research.In above-mentioned suggestion, relate to such strategy, promptly in the zero dimension of (partly) conduction or one-dimentional structure, insert tunnel barrier, to obtain tunneling effect or coulomb blockade completely in this way.These structures can only realize (this is for being used to realize that the nanoelectronic equipment of high density of components is favourable) in single ion trajectory on the one hand, also can be that a plurality of contacts by a kind of checkerboard in a pixel (Pixel) are mentioned, perhaps have very many (typically several 10
6To 10
8/ cm
2) similarly components and parts be combined concurrently and contacted simultaneously.
Simultaneously, what be disclosed in addition is, is introduced into that defective in the Baji-tube for example bends or similar defective works as tunnel barrier.In the Baji-tube with two adjacent defectives (for example two bendings), coulomb blockade can be implemented, and can construct tunnel diode like this.Mentioned the growth of the Baji-tube in hole in the above.Can on purpose tunnel barrier be introduced wherein by during its growth phase suitable, in Baji-tube, constructing defective (for example in its growth course, introducing heteroatom to tubule ground a middle or short term) by vapor deposition.Subsequently based on Baji-tube, can in ion trajectory, generate tunnel diode or the similar structure of SET thus.Alternatively, Baji-tube can be bent and is touched outwardly after it grows out from etched ion trajectory (perhaps other hole) in order to make tunnel effect.Wherein Baji-tube can grow the length until μ m or mm from ion trajectory.It can be used as on the one hand and is used for the very short microwave or the unusual ultrared antenna of long wave subsequently, is used for the very ultrasonic wave of high frequency as trickle resonator on the other hand.In in the end a kind of situation, mechanical oscillation is converted into electrical signal and carries out (the Baji-tube contact in ion trajectory) by the electric capacity change of system.Last Baji-tube also can be covered by the object of nanometer or microcosmic (for example cell or enzyme), and this causes the change of the natural mode shape of nanometer tubule.But this frequency shift is electronic measurements in principle.Baji-tube-ion trajectory components and parts can be used as biology sensor and use (referring to above) thus.
Be used for the definite TEMPOS structure of Fabrication parameter and comprise following process steps basically:
The layer that I. will be made of the material of electric insulation is applied on the Semiconductor substrate of a p type or the doping of n type
II. in the layer that the material by electric insulation constitutes, generate doped channel
III. in doped channel and on the layer that the material by electric insulation constitutes, apply the coating that constitutes by the material that conducts electricity, and
IV. the material by electric insulation constitute the layer on and Semiconductor substrate on depositing electrode.
Wherein single processing step can be with disclosed method execution.Processing step I particularly, wherein the oxide skin(coating) of electric insulation can be by traditional thermal oxidation manufacturing, yet also can be preferably by carrying out under the process temperature of PCVD in 200 ℃ to 300 ℃ temperature range.In this deposition technique, promptly wherein material is precipitated from plasmoid, and suitable temperature range causes significant energy saving.Can determine stoichiometrical composition preferably to be made, radiative SiON layer by regulating plasma parameter exactly at this, but this not only determines the etching that needs in case of necessity, but also determined luminous quantity.Needing no vacuum technology and clean room's technology are used to make the TEMPOS structure in addition, and this reduces expense equally.
Doped channel in processing step II for example can be traditionally by the lithographic method that mask and no mask are arranged, for example with the electron ray manufacturing, the following structure boundary in this can realize the 100nm scope wherein.Therefore in order to form doped channel as nano level hole, process II can be preferably by carry out by the layer that the material of electric insulation constitutes nextly with Heavy Ion Radiation, wherein these holes have distribution in the layer that the material by electric insulation constitutes, selectable, statistics, and have selectable pore diameter, the hole degree of depth and pore shape, wherein these hole parameters can be regulated by the selection of radiation parameter.By using ionizing radiation, have particularly that high-precision nano level hole can be made relatively simply and on industrial standard, produce in a large number in advance.Wherein on the one hand can directly the non electrically conductive material in pore region be converted into electric conducting material by the ionizing radiation realization, for example with nonconducting, have a sp
3The carbon of structure (diamond lattic structure) is converted into the sp that has of conduction
2In the situation of the carbon of structure (graphite-like structure).In addition according to favourable improvement project of the present invention, in method, also can consider, in order to form doped channel, follow the etching of the ion trajectory after radiation closely in processing step II, its mesopore parameter can be regulated by selecting etching parameter, particularly etching duration.The hole parameter not only can be by radiation thus, but also can be conditioned by etching.
At structure, for example SiO that the layer by substrate that conducts electricity and electric insulation is constituted
2/ Si or SiON/Si structure be during with Heavy Ion Radiation, and the selection of ion place and ion energy has been considered as track geometry hole to be made, that will reach by ensuing etching and has decided.Wherein this be noted that (bevorratende) semi-finished product manufacturing that ionizing radiation that the hole manufacturing can be by needing particle accelerator is advanced by storage and shockingly-particularly traditional relatively manufacture method-carry out at an easy rate.For example one typical, to have radiant flux be 10
9On the heavy ion avcceleration of ion/s, when per hour radiated time is 1000 Euros, be used for the wafer with 10cm diameter is carried out radiation to produce every cm in the expense of hypothesis
210
7Individual ion trajectory, expense only are about 20 Europe branches.Under very heavy projected ion (Projektilionen) (for example Xe, Au) and high-energy (approximately hundreds of MeV is to several GeV) situation, can be by the ensuing hole that in suitable material, as the etching among the SiON, generates with near cylindrical geometry, under the projected ion (for example Ar, Kr) and little energy (about tens MeV are to about 100MeV) situation of medium atomic number, etch structures becomes aciculiform (taper) or infundibulate.With very light projected ion, the outside etching (Heraus tzen) of special structure is impossible.According to application and surely, ionizing radiation can or cover whole surface or is configured two-dimensionally by photoetching technique.At this, this structure for example can design distributes to the electrode of waiting to be placed on the layer that the material by electric insulation constitutes with hole.Ion trajectory in case of necessity, in the follow-up etching, etchant is hydrofluoric acid normally, the selection of etchant concentration and etching duration is according to treating etched material (SiO for example
2, SiON) and their definite chemical composition determine.Decide ground on using, ion trajectory can be by etching duration variation on whole length, promptly etched up to substrate edge interlayer ground, perhaps just partly as the etching of pin type cavity ground surface, perhaps ion trajectory can be opened with different diameters.If hole does not fully penetrate the layer of electric insulation, then charge carrier injects and mainly carries out at electric insulation layer, and this light that causes especially raising in SiON is exported.This notion is specially adapted to photoelectric component thus.Etching duration has determined the therefrom function of the structure of exploitation by pore length and pore diameter thus, for example as npn transistor npn npn or pnp transistor npn npn.Therefore, in the TEMPOS structure, can make for the first time with by the different typical structure of the doping of heteroatom.
In the components and parts based on the TEMPOS structure, for microminiaturization extremely and higher void density, in the future accurate hole location is indispensable; Common statistical distribution of pores in the TEMPOS structure is not enough at this.For example can or use nanoimprinting technology for this reason; Each ion is individually write on suitable steering on the components and parts based on the TEMPOS structure, and perhaps the aluminium oxide of porous directly or as mask is used, and is used for the ionizing radiation to the dielectric layer on Semiconductor substrate.
Particularly at SiO
2But on layer or the SiON layer and the layer that in etched ion trajectory, applies the high resistant of conduction, for example can be undertaken by silver-colored evaporation or silver or other the chemical vapor deposition of electric conducting material according to processing step III.Also possible is deposit from liquid phase on the colloid that is set up accordingly.In deposition, coating should be provided with in its conductive capability like this, make its on the one hand can by ion trajectory realize good, to the electric charge injection that is arranged in the Si it under, and having very important resistance on the other hand from the teeth outwards, repeatedly contact so from the teeth outwards also can not have short circuit (" partially conductive ability ") between these contacts.Nanocluster for example dispersed and distributed, that be made of metal or conductive oxide such as indium tin oxide (ITO) may be as suitable conductive layer, and the latter is because the transparent optical application that is used in particular for of ITO.The partially conductive layer can-according to application and surely-or cover whole sample, perhaps constructed two-dimensionally by photoetching technique.Then in processing step IV, manufactured TEMPOS structure with disclosed mode with for desired function and strategically suitable position contacts and is electrically connected.According to the geometrical arrangements of hole, conductive layer and electric contact and surely, can carry out from simple analog or digital circuit engineering to the transition of multilevel logic components and parts thus.
With combination TEMPOS similar with local reformed parameter, according to a kind of method expansion scheme also advantageously, in processing step III, be applied in the doped channel and be applied on the layer that the material by electric insulation constitutes by the different coating that constitutes of material of conduction.Thus, in its parameter, almost can make the TEMPOS structure of optional and continuous and/or discontinuous stretching, extension.
A special advantage of the TEMPOS structure that parameter is determined is its significant generality and flexibility, and this causes forming very different components and parts, also has different physical function principles, yet still has unified outward appearance.New TEMPOS structure is as unified original material, be applicable to nano level in the practice, in active and passive and the electronics in simulation and form of implementation numeral and the realization of the basic components and parts of photoelectron, transistor for example, SET (single electrode transistor), FET (field effect transistor also has the JFET that unites), amplifier, generator, oscillator, flip-flop storage, resistance, current control resistor, electric capacity, diode, the S-tunnel diode, thermistor, temperature-sensitive electric capacity, light resistance, photocapacitance, photodiode, ambipolar (photosensitive) transistor, photocell, light-emitting diode, humistor, humicap, wet quick diode, wet quick battery, organic gas resistance, organic gas electric capacity, organic gas diode and organic gas battery.A kind of favourable application characteristic of the TEMPOS structure that parameter is determined is thus, in the simple circuit arrangement of an extra switch element with the least possible number as electronics, the function of active or passive components and parts, particularly with as transistor, capacitor, resistance, the function of the configuration of amplifier or oscillation circuit (high-frequency component), function as photoelectric cell, particularly with function as the structure of optical transmitting set or photodetector, function as wet electronic component, particularly with function as the structure of wet quick battery, perhaps as the function of the structure of the element of transducer, particularly with function as the structure of transducer cell, function as digital element, particularly as the function of trigger, perhaps as the function of the combination of these components and parts, wherein the formation of function corresponding is determined by the parameter of TEMPOS structure, particularly by with partly the regulating and the formation of arranging by electrode of the formation of the doped channel of hole and coating form and the variation of passing through applied amount by the working point, wherein coating is made of the electric conducting material with the nanocluster form.Special embodiment will partly provide in special description.
In principle, the TEMPOS structure not only shows passive characteristic, but also shows active characteristic.In the electronic devices and components with sourceless characteristic that are implemented, the signal of existence is modified under the normal decay of passing through of signal, and signal is generated and produces the amplifier function in active element.With respect to traditional circuit arrangement, the demand to additional circuit element in the circuit that all are implemented significantly diminishes.The TEMPOS structural table reveals real transistor effect.The TEMPOS structure advantageously not only can be used as active according to its structural layout but also can be used as passive electronic component and uses thus.Also have parameter combinations (for example to exist: the SiON of the no luminescence generated by light on p type Si; Ion trajectory 50s is etched, has the Ag cluster), they cause having the characteristic of strong negativity resistance.This parameter combinations is that light is anti-, i.e. light incident means I
V/ V
VWThe foundation of characteristic, amplification coefficient becomes big consumingly like this.Since a critical light intensity, for example between the light of daylight and 1mW laser, resistance is just becoming and the amplification coefficient collapse.Because very precipitous characteristic, element reacts extremely sensitively for the minimum difference in light intensity, provides highstrung photometric structure at this like this.Other application possibility is by utilizing simulation and two-way amplifier numeral sloping portion, that have the TEMPOS structure that characteristic curve changes as going damping portion (Entd mpfungsglied) on tunnel diode or the Esaki diode meaning.This amphicheirality has provided a special advantage: with a traditional transistor, circuit can only be in one-way only operation, for example from microphone to loud speaker.With the element based on the TEMPOS structure, this rightabout from the loud speaker to the microphone also can be used.A kind of other application examples that comes from the activated amplifier function is an oscillator in this way.In addition based on resistance (NERPOS) the TEMPOS structure, that have closely, have the difference negativity with form of implementation part metal or the hole that semiconductor clusters is filled.By this characteristic, element, for example trigger and the memory of numeral can be designed, and digital technology also can be considered as the application of TEMPOS structure like this.
Structural form of the present invention is further understood in following accompanying drawing detailed description by summary for it.Wherein:
Fig. 1 in the cross section, illustrated have the column type hole that runs through, according to the principle structure of semiconductor composite construction of the present invention (TEMPOS structure),
Fig. 2 shows the SEM shooting figure of the TEMPOS structure of making according to Fig. 1,
Fig. 3 shows the principle structure with TEMPOS structure that do not run through, the taper hole,
Fig. 4 shows the principle schematic of electronic working principle of the TEMPOS structure of expansion, wherein integrated source contact and drain contact,
Fig. 5 shows first equivalent network of the element that is made of the TEMPOS structure,
Fig. 5 A shows second equivalent network of the element that is made of the TEMPOS structure that has the negativity differential resistor,
Fig. 6 shows the conduct indicatrix of the TEMPOS structure of nonlinear resistance at room temperature,
Fig. 7 shows the indicatrix as the TEMPOS structure of the nonlinear resistance under the ambient temperature that raises,
Fig. 8 shows the characteristic family as the TEMPOS structure of npn transistor npn npn,
Fig. 9 shows the characteristic family as the TEMPOS structure of pnp transistor npn npn,
Figure 10 shows the characteristic family as the TEMPOS structure of npn phototransistor,
Figure 11 shows electric capacity and the conductivity as the TEMPOS structure of the photodiode of the light intensity that depends on incident,
Figure 12 shows first characteristic family of the tectal TEMPOS structure with the interruption that is made of silver-colored cluster,
Figure 13 shows second characteristic family of the tectal TEMPOS structure with the interruption that is made of silver-colored cluster,
Figure 14 shows the characteristic family as the TEMPOS structure of humidity sensor,
Figure 15 shows the characteristic family that has the TEMPOS structure of noise on a definite voltage threshold,
Figure 16 shows the characteristic family of the TEMPOS structure with local negativity differential resistor that forms,
Figure 17 shows the characteristic family of the TEMPOS structure with strong negativity differential resistor,
Figure 18 shows the pedigree of TEMPOS structure, and
Figure 19 shows the parameter list of TEMPOS structure
And following accompanying drawing shows the circuit arrangement of application of the TEMPOS structure of the nanocluster with conduction, and wherein the TEMPOS structure is applied to:
Figure 20 temperature-sensitive capacitance sensor-oscillator,
The photosensitive capacitor remote control of Figure 21 local oscillator,
Figure 22 low-frequency noise source,
Figure 23 photo resistance transducer,
Figure 24 photosensitive capacitor transducer,
The photosensitive capacitor remote control that Figure 25 band is logical,
The photosensitive capacitor remote control of Figure 26 low pass,
The photosensitive capacitor remote control of Figure 27 high pass,
Figure 28 signal frequency multiplier,
Figure 29 amplitude modulator,
The unsettled multivibrator of Figure 30,
Figure 31 thermistor (temperature) sensor,
Figure 32 photistor level,
The radiation of Figure 33 photoelectric nano cluster, and
Figure 34 oscillation circuit
And following accompanying drawing shows the circuit arrangement of the application of the TEMPOS structure with negativity resistance (NERPOS), and wherein the TEMPOS structure is applied to:
That Figure 35 simulates, two-way amplifier (first is a circuit structure, and second is a voltage amplifier, and M1 is the voltage curve of input, and M2 is the output signal after the amplifier),
The simple NERPOS oscillator that Figure 36 compares with traditional transistor electronic equipment (descending) (on),
Compound (the Tandem)-two-in-series of Figure 37 low-frequency oscillator,
(first is a circuit structure to the oscillator of Figure 38 amplitude modulation(PAM), and second is the signal change curve, M
NFBe modulation signal, M
AMBe modulated carrier frequency),
Figure 39 saw-toothed wave generator (first is a circuit structure, and second is a saw-toothed output) and conduct
The trigger of Figure 40 photoelectricity (first is a circuit structure, and second is the change in voltage curve)
And following accompanying drawing shows the circuit arrangement of application of the TEMPOS structure of the fullerene (MOSBIT) with humidity sensitive, and wherein the TEMPOS structure is applied to:
(frequenzdigitale) gas sensor of Figure 41 frequency numeral,
Figure 42 simulates the gas sensor amplifier of conduction,
Gas-electric current-the switching amplifier of Figure 43 simulation,
Figure 44 simulation-ohmic gas sensor amplifier,
Gas-voltage-the switching amplifier of Figure 45 simulation,
Figure 46 gas-voltage battery, and conduct
Figure 47 solar cell
Mention in the above, usually can represent as the abbreviation of " Tunable Electronic Material with Pores OnSemiconductors " with " TEMPOS " according to semiconductor composite construction of the present invention.Similarly, yet the TEMPOS structure that has as fullerene coating, that have humidity sensitive of the high resistant of the conduction on the layer of electric insulation can wherein relate to the abbreviation of title " MOisture Sensoringwith Buckminsterfullerene in Ion Tracks " with abbreviation " MOSBIT " expression.The TEMPOS structure that has local negativity differential resistor in addition can be represented as the abbreviation of " NEgativeResistance of Pores in Oxide on Semiconductors " with " NERPOS ".And by use these notions do not limit the present invention to specific, cause on the form of implementation that this notion selects.
Fig. 1 summarily shows the TEMPOS structure that the parameter of the adjacent layer EIL that has Semiconductor substrate SCS and be made of the material of electric insulation is determined in sectional view.The TEMPOS structure is electrically contacted by three electrode o, v, w (with " terminal " or " tap " same meaning on electricity).The doped channel of the vertical orientation of integrated nano level hole VP form in the EIL layer that the material by electric insulation constitutes.The distribution of its mesopore VP, pore diameter, the hole degree of depth and pore shape can freely be selected.In selected embodiment, the hole VP of column type is illustrated in groups different sizes, that be assigned to top electrode o, w, and these holes VP runs through the EIL layer that the material by electric insulation constitutes and the simple migration that particularly enters Semiconductor substrate SCS of the charge carrier that can realize like this adding fully.These additional charge carriers can be provided by a kind of electric conducting material ECM, and this material is applied in the hole VP with the form of the nanoparticle DNP that disperses in an illustrated embodiment and is applied on the surface of the EIL layer that the material by electric insulation constitutes.Wherein the nanoparticle DNP of Fen Saning forms the resistance gradient of high resistant between electrode o, w, has prevented short circuit at this like this.And the EIL layer that additional charge carrier can constitute by the material by electric insulation substantially perpendicularly moves.Hole VP with nanoparticle NP of dispersion has showed a large amount of especially aciculiform semiconductor interfaces in the TEMPOS structure, the TEMPOS structure can be called as " multi-stylus end diode is arranged (Mulitspitzendiodenanordnung) " like this.It can be represented by the equivalent circuit diagram with respective diode layout on the electricity.
Figure 2 illustrates shooting figure by grating electron microscope SEM.Can see the layer that the material by electric insulation constitutes above, be SiO at this
2, the hole of many different-diameters is integrated in wherein with the distribution that disperses.Dark zone line in hole represents to be positioned at the Semiconductor substrate under it, is Si at this.In an illustrated embodiment, hole is to run through etched.Bright edge around hole shows the stretching, extension of its taper.The white point that can see in SEM shooting figure is the cluster that constitutes of material by conduction, be silver at this, it be applied in the hole and be applied in that material by electric insulation constitutes layer the surface on.
The similar summary of Fig. 3 and Fig. 1 shows the sectional view of the TEMPOS structure that parameter determines, yet has the hole VP that taper is extended at this, and these holes VP does not run through the EIL layer that the material by electric insulation constitutes fully.In this scheme, additional charge carrier is migration in the layer that the material by electric insulation constitutes more.For example relate to photosensitive silicon oxynitride SiON at this, it becomes the light emission enlargedly in the light radiation of TEMPOS structure, and this light emission can correspondingly be used in measurement.
Fig. 4 shows the principle schematic of the electronic working principle of TEMPOS structure.Competing mutually with many vertical current paths (seeing insertion portion) of at least two levels wherein forms diode in the interface.Each current path is distinguished than mutual by different current potentials.There is shown: the cover layer T of high resistant, the layer A of anisotropic conductive, Semiconductor substrate S, the conducting channel C among near the semiconductor S the A-S boundary layer, two top contact K
o, K
w, a below contact K
vSource contact K
sWith drain contact K
DUnder the condition of usage level raceway groove C, be expressed alternatively for additional integrated controlled transistorized structured configurations.The anisotropy of layer A in the TEMPOS structure usually by directed parallel to each other in insulator layer, mainly be that vertical conductive path generates.Those paths can be like this: a) by be filled in the etched ion trajectory that comprises in the insulator with (partly) electric conducting material, b) if potential ion trajectory conducts electricity, then pass through these potential ion trajectories, and c) by the self-organizing structures of similar structure, be formed.Thus on the principle except heterogeneous combining structure, can also use heterogeneous and single structure homogeneous according to the present invention, they present the strong anisotropy of its conductivity, and (the highest abreast with their surface is very little, the conductivity of electric insulation nearly, and vertical or have an angle direction to present with their surface to exceed 10 at least
6The conductivity of the factor.)
The theoretical description of TEMPOS structure.People have carried out first and have attempted, for the operation principle of new TEMPOS structure is carried out the explanation of physics.Supposed equivalent network for this reason, yet wherein only related to a kind of special circumstances (thyrite) of TEMPOS structural extended scheme according to Fig. 5.For other of great value characteristic (for example negativity differential resistor characteristic) of TEMPOS structure, set up other equivalent network with the other physical viewpoint in the quantum effect field particularly.However, in the special circumstances of thyrite, also can obtain the understanding basis and that point the direction.With the equivalent network according to Fig. 5, for example the current path from contact o to contact w or v can be tracked.Electric current or can directly flow to w by surface coating perhaps can flow into the silicon that is positioned under it by the track that is arranged under it.Track can pass through resistance R
oAnd has a leakage current resistance R
OxDiode D
OxDescribe.Under oxide skin(coating), can set up enhancement region, barren district or zones of inversions.Near the voltage that applies, the existence of a this layer (being called as " raceway groove ") depends on the leakage characteristics of oxide, and this can pass through the track resistance R
tWith diode parameters D
OxAnd R
OxDescribe.R for low-resistance
t, D
OxAnd R
Ox, pass through C
OxOn field effect, can have only a little or do not have electric charge control at all.Channel resistance passes through R
cDescribe.Under the bias condition of determining, must overcome potential barrier to the electric current of terminal v direction from raceway groove to base silicon, this is by having bleeder resistance R
LAdditional diode D
LDescribe.For relatively, traditional disclosed, mos capacitance of not having track is at diode D
LThe position illustrate by the electric capacity that depends on bias voltage, this electric capacity for example provides by the transition region from reverse layer to base silicon, because do not flow through direct current here.Have in the opposed polarity voltage condition at contact o and w place, also must consider on silicon face, to have an additional pn knot.
By this way, the contribution of discrete component can be estimated.Making us interested especially at this is the track resistance R
t, because its size controlled the existence of the layer with free carrier or do not existed, i.e. oppositely layer or enriched layer, and also control R thus
c, D
LAnd R
LValue.I according to this model
V-V
VWThe detailed description of characteristic provides at least on matter and has observed consistent result.Must be distinguished in these two kinds of situations, they are with Class1 or type 2 signs.In Class1, track only a little ground is etched, like this R
tVery big.Type 2 is corresponding to less R
tSituation, this can rule of thumb be implemented by longer track etching duration.In Class1 and type 2, the role swap in electronics and hole, complementary characteristic appears like this.As can be seen, decide ground on the voltage that applies, element or can be regarded as weak nonlinear resistance perhaps can be regarded as by the sensed pn knot in the field of side direction.In characteristic, often occur violent asymmetric, and crooked and/or precipitous rising.Not only barren district, and zones of inversions and enhancement region can each be generated below surface contact according to the voltage that is applied in, so just possible, with electric current from a contacting to another.On certain working point, semiconductor composite construction according to the present invention has the negativity differential resistor, and it comprises pnp transistor npn npn (in Class1) or npn type (in type 2) characteristics of transistor like this.Be observed the power amplification coefficient power amplification ratio that reaches the factor 24 so far at this.Transistor effect can be reappeared and often be followed the light emission of point-like.
The first basic rough approximation relation of attempting having provided for current/voltage characteristic for the operation principle of TEMPOS structure according to the present invention by means of the theory of deriving according to the equivalent network of Fig. 5:
I
O＝β(R/(R+2))(V
V+V
W)(V
O-V
W)
β=C wherein
OXμ W/L, R are resistance ratio R
c/ R
t, μ is the charge carrier mobility, and W is a channel width, and L is a channel length, and V
V, V
O, V
WBe the voltage that applies at contact v, o and W place.This relation only is applicable to small voltage V
V, constant because R is assumed that.Yet owing to the electric charge that in raceway groove, produces by field effect, R
cAlong with the voltage V that increases
VAnd reduce, it is non-linear that this causes being observed.At very strong negative voltage V
OwDown, by the field effect that increases, it is parabola shaped that the current/voltage characteristic of Class1 becomes, like this with regard to the characteristic near traditional MOS transistor.
Fig. 5 A shows second equivalent network, by means of it, and should be more deep for explanation according to the characteristic electron of of the present invention, TEMPOS structure (NERPOS) in special tectonic with negativity differential resistor.The ash colour specification be direct other thin and silver layer high value of above nitrogen oxide, it has also filled up ion trajectory.This discussion only clearly is limited to the simplest situation, promptly uses p type substrate.This advantage that has is, in employed voltage range, substrate is maintained in the deposit (Akkumulation), and need not to consider the additional concurrent situation that produces owing to the reverse appearance of layer.The equivalent electric circuit of simplifying is by the band that links to each other with the contact v resistance R of p-Si
v, basically band resistance R along the diffusion of the electric current of oxide interface described
wAnd R
o, Schottky diode D
wAnd D
oAnd the resistance of the band in metallized nuclear track (Kemspuren) (Bahnwiderstand) R
KoAnd R
Kv(not being illustrated of back) constitutes.The Schottky characteristic of the silver on p type silicon prove known and for example by Smith and Rhoderick record.When at the o place be negative voltage and at the v place under the situation of positive voltage, diode D
oBe switched on (offen), form an electric current band v-o, it has the characteristic of ohm owing to this band resistance.Supposition is negative voltage at o place, and when at the v place being the situation of little positive voltage, then demonstrate negative voltage examining under the track w, like this diode D
wBe reversed polarization.A point occurs along with the positive voltage of the v that increases, the voltage to decline under this some w of place is positive.Diode D
wConducting.In adjacent p type zone, injected minority carrier (electronics).Be noted that resistance R
wBasically concentrate on around the nuclear track in the silicon on the zone of hole (Austrittsloch).This situation can be compared with the current potential trend (Potenzialverlauf) of metal tip on leaning against semiconductor.The minority carrier that is injected into causes resistance R
wReduction and cause the rising of the positive voltage on the diode thus.Diode refills more electric current or the like.In the ideal case, the band resistance " is flooded " (ü berschwemmt) in this wise by injecting, and promptly its disappearance and electric current are just also by diode limits.Occurred the switching effect that is made of high-impedance state in low resistive state like this, its makes own as the indicatrix that drives in the wrong direction or difference negativity resistance and noticeable.
Following observation explanation, switching voltage v is along with negative voltage o reduces.For diode D
wIn the silicon under the w, use same positive voltage, with its connection always.The reduction of switching voltage v can only mean thus, little and " conveying " current potential v better of the band resistive in silicon.This reduces in this way realizes, promptly when voltage o is lowered, at diode D
oThe forward voltage that adjusted is higher.Diode injects more strongly thus.The prerequisite of this thought is the band resistance R in ion trajectory
KBand resistance than silicon is bigger.Be noted that D
wInjection not only in resistance R
wAnd R
vLast employing, but also at R
oLast employing.By diode D
wConnection, at diode D
oOn voltage drop also change; It is continued to connect and employ thus D
wOn the injection of raising.
Explanation is so far carried out for p type silicon.Yet also disclosed is to have silver metallized n type silicon and also have Schottky characteristic (for example in the article of Rhoderick and Williams).Can suppose also have similar switching characteristic thus for the semiconductor composite construction with the substrate that constitutes by n section bar material according to the present invention.
Figure 6 illustrates measure under the room temperature RT, at indicatrix as the TEMPOS structure of etching duration in the scheme of controlled semiconductor resistor, that have 3min.In the measurement of I-E characteristic, the typical I, the U characteristic curve that demonstrate the barrier layer semiconductor components and devices change.Its temperature dependency can prove that Fig. 7 shows when ambient temperature is 60 ℃ according to Fig. 7, and having etching duration is the indicatrix of the TEMPOS structure of 3min.Obviously can see the planarization of being expected of indicatrix.Here be noted that to control and attempt carrying out, yet this structure does not have hole with similar semiconductor composite construction.They do not illustrate the described characteristic of TEMPOS structure, but be the characteristic of common high resistant resistance, this has indicated the existence of the hole of the conduction in the layer of the basic particularly electric insulation in the scheme of etched ion trajectory, in the TEMPOS structure of the present invention.
Fig. 8 shows the characteristic family of the npn transistor npn npn made from 7 minutes etching duration (etching is 7 minutes in hydrofluoric acid solution HF) from the TEMPOS structure, in this transistor, the electrode v on the back side of lip-deep two electrode o, w that the silver of TEMPOS structure covers and aluminium coating thereon is that the silver conduction is pasted (silberleitkleberkontaktiert) that contacts.In should using, in the Control current loop of realizing the npn transistor npn npn between electrode v, the w and between electrode o, w, realize the load current loop of npn transistor npn npn.Along with the voltage U ow that increases in load current loop, load current Io also increases, and in addition can be by the control voltage U
VWControl.This npn transistor npn npn function provides with the simple diode equivalent circuit diagram of the structure that illustrates equally in Fig. 8, and this equivalence circuit is made of three multi-stylus peak diode complexs (Multispitzendiodenkomplexen) in principle.Similarly, according to Fig. 9, carry out comparable laboratory research in the load current zone an expansion in a TEMPOS structure with 10min etching duration, the result is that the etching duration that can only pass through to prolong with the constant contact of TEMPOS structure generates and make the pnp transistor npn npn.Corresponding to equivalent circuit diagram, semiconductor composite construction-bipolar transistor is combined by three multi-stylus peak diode complexs in first approximation equally considering under the polarity.
Figure 10 illustrates have photosensitive electric insulation layer, for example SiON, as the characteristic family of the TEMPOS structure in the form of npn type phototransistor.In order to support photosensitivity, etching duration HF has only 5min, and taper, that do not run through like this hole is generated.Light is gone into jet and is represented with Φ.It can be seen that obviously indicatrix rises along with becoming big light incident.Figure 11 shows has the electric capacity change that etching duration HF is the luminous power TEMPOS structure, that depend on incident of 10min in the form as photodiode.This also can try to achieve by the measurement of variable voltage in optical sensor.
Figure 12 illustrates according to the photosensitive TEMPOS structure of the present invention (silicon that p mixes, the just dark current that illustrates) characteristic family (current-voltage-characteristic) is as the curve that the coating at the interruption between two surface contact on the body structure surface (seeing interpolation place) draws.Only connect thus by providing in the conduction that runs through between two surface contact near the buried conducting channel in the Semiconductor substrate of the interface of the layer that constitutes to material by electric insulation.This raceway groove passes the ion trajectory ground Be Controlled of remaining surface coating and conduction.These indicatrixes are very similar to common diode characteristics curve and can separate by applying grid voltage.Figure 13 shows the characteristic family according to photosensitive TEMPOS structure Figure 12, that p mixes, and it is controlled by the radiation with the visible light of varying strength.First curve shows the dark current that relies on voltage.Additionally, applied grid voltage.The characteristic of formed element is as photodiode or photocell.When not applying grid voltage, the characteristic of the element of formation performance photo resistance.Figure 13 illustrates the influence of light to the indicatrix of the TEMPOS structure of surface coating with interruption.It can be seen, light with Figure 12 in different mode indicatrix is descended, the influence of humidity and light can distinguish mutually significantly like this.Draw and the similar characteristic family of light for TEMPOS structure as organic gas sensor.As ethanol or acetone gas and light indicatrix is descended.Yet these two kinds of gases can not only distinguish with the TEMPOS structure with fullerene mutually.In order to make this become possibility, must measurement conform to a detector other, that for example ethanol is specific (for example having the SnO coating of high resistant and the semiconductor composite construction of void filler).
Figure 14 illustrates at the characteristic family as the TEMPOS structure in the form of humidity sensor, wherein this humidity sensor has material high resistant, conduction as the coating on the layer that is made of the material of electric insulation and the void filler (MOSBIT) that is made of fullerene.Indicatrix has the variation of diode-type.It can be seen that obviously indicatrix rises along with the humidity that increases.Wherein when having humidity, the voltage that does not apply and the own electric current of electric current flows this means, having the TEMPOS structure of fullerene can own generation voltage and as energy storage device.Its reason is at fullerene and poor as the contact potential of the dependence environment between the silicon of substrate.
Based on the element of TEMPOS structure in the structural configuration of determining, particularly in the unsteadiness of using metal cluster and under electric field strength higher, that be applied in, having its I-E characteristic.Figure 15 shows the characteristic family to the characteristic of the TEMPOS structure with slight noise, and this noise begins on certain current strength.At this, this noise is made of the little spike in characteristic, and these spikes make and tend to littler voltage when higher electric current.Figure 16 shows a characteristic (at V
Ow=2V and V
OvDuring=10V), wherein these spikes are formed extremely doughtily at a definite some place.Relate to a characteristic at this, it is closely similar with the characteristic of Esaki diode that uses in digital technology or tunnel diode.Last Figure 17 shows an I-E characteristic, and wherein electric current enlarges markedly on a definite threshold voltage, rather than stable again at a higher value place.Electric current increases certain the reducing that is accompanied by voltage, and the element based on the TEMPOS structure has very strong significant negativity differential resistor (abbreviation " NERPOS "=" NEgative Resistance of Pores inOxide on Semiconductors ") like this.
Figure 18 shows the diagrammatic sketch of a test, it has been expressed in a pedigree by different parameters and has determined different possible TEMPOS structure family (genealogische) relation each other that can generate, needs only that be disclosed their today or under development.Different open arrows shows therein the also main region of expectation expansion in the future.In Figure 19, organize together with the parameter that can freely select of form with the TEMPOS structure.What be credited to also has and its material that is fit to and its application.This form is corresponding to the current state of cognition and show the space of expansion in the future.
In the temperature dependency of the 3min HF TEMPOS structure shown in Fig. 6 and Fig. 7 can be in 10min HF TEMPOS structure be installed into functional circuit and application circuit according to Figure 20 very simply as the element (temperature-sensitive electric capacity) of determining frequency about its internal capacitance (temperature-sensitive electric capacity) and inner parallel resistance (thermistor), and used by practice ground, wherein Figure 20 shows the electrical circuit figure of the transducer-oscillator of the temperature-sensitive electric capacity with 10min HF TEMPOS structure.The frequency of this transducer-oscillator is direct, digital measuring for temperature to be measured.Can be like this on the measuring technique between room temperature and 80 ℃ of ambient temperatures, in corresponding analyzer frequency spectrum, determine the oscillator frequency difference of 190kHz.In the application of 7min HF semiconductor composite construction, draw the oscillator frequency difference of 201kHz, and in the application of 5min HF TEMPOS structure, draw the oscillator frequency difference of 188kHz, draw about 3kHz/ ℃ temperature sensor sensitivity like this for this temperature measurement range.Figure 21 illustrates the circuit diagram of Long-distance Control of the photocapacitance (optokapazitiven) of a local oscillator.The photoelectric effect that wherein has etching duration HF and be the TEMPOS structure of 10min is used in the structure of photoelectricity npn transistor npn npn level.If forbid direct current (open circuit) in this structure, then when the input (Einkopplung) of light radiation about the measurement result of capacitive change according to Figure 11 at electrode o, w or v, w place according to the order of magnitude be identified.This special characteristic of photoelectricity TEMPOS structure is applied in by a 10minHF semiconductor composite construction according to Figure 21 technically is used for having the functional circuit of control of photocapacitance that frequency is the local oscillator of f=3.88756MHz.Keep in the frequency adjustment region less, that about centesimal electric capacity changes at one, when fundamental frequency f=3.88756MHz, the frequency shift of this local oscillator is Δ f=16.5kHz.
Figure 22 shows and has predetermined etching duration the application of the TEMPOS structure of (can correspondingly select) for the low frequency noise source here and in the circuit arrangement according to the accompanying drawing of back, wherein the high local electric field strength in the TEMPOS structure causes electrical discharge at random, frequent and recombinant (Rekombination), and therefore produces measurable noise voltage at breakout.As the measurement according to Figure 10 illustrates, input Φ, λ along with light radiation, slope in I, U characteristic family also changes, and promptly the difference electricity resistance (photo resistance) of semiconductor composite construction also changes, and feasible application as the photo resistance transducer becomes possibility according to Figure 23.The change of the light radiation of input causes that at this electric current changes in current circuit, and causes that thus available correspondent voltage changes at the electrode place.In application as the photosensitive capacitor transducer according to Figure 24, the semiconductor composite construction as photodiode by series capacitance C
1No direct current ground no-load running (leerlaufbetrieben) in the change of photosensitive capacitor, and input light radiation to be measured is converted into isarithmic numerical frequency at two breakouts.Except the communication technology according to Figure 21 is used, the communication technology of semiconductor composite construction use can also by these types practice ground of optical coupling realize being used for according to the photosensitive capacitor of the band pass filter of Figure 25 Long-distance Control, be used for according to the low pass filter of Figure 26 with according to the Long-distance Control of the photosensitive capacitor of the high pass filter of Figure 27, so that the alien influence of the electromagnetism that disturbs of total ban advantageously.
Regulate according to as according to Figure 28, by the direct voltage that in the zone of big indicatrix bending, on TEMPOS structure, is applied as bipolar transistor, during as the I of the application of signal frequency multiplier, U working point, the signal voltage distortion of input and its frequency, signal frequency are doubled and are that two electrodes can be used.Used according to the working point of Figure 10 according to the application of Figure 29 and to have regulated, be used for two signal voltages being multiplied each other in the mixing of additivity, this is corresponding to practice, the simple realization of amplitude modulator, and wherein modulation voltage can be the further processing and utilizing of the communication technology subsequently at two electrode places.If selected as the I in the application in the semiconductor composite construction of npn type tunnel transistor, U working point, then the tunnel effect by flexural property curve sign is conditioned out (S-tunnel diode) when about 2V/1mA.In connection, draw application subsequently, and produce radio-frequency oscillator and two-way high-frequency amplifier as the next development phase by this semiconductor components and devices as the unsettled multivibrator in tunnel effect according to the TEMPOS structure of Figure 30.
TEMPOS structure transistor that a working point is conditioned is shown as thermistor according to the other application in temperature measurement technology of Figure 31, i.e. thermistor transducer, its output voltage at two electrode places are the direct tolerance to the temperature of input.Application according to Figure 32 shows a kind of phototransistor level, and its output voltage at two electrode places is the direct yardstick to the radiation of input, as typically being measured for the element that is made of the TEMPOS structure according to Figure 10.Application according to Figure 33 relates to the TEMPOS structure of a kind of SiON/n-Si (II) and SiON/p-Si (I) as color photoelectric nanocluster radiator, their corresponding wavelength X=4*n*1 depend on the corresponding length or the degree of depth 1 of refractive index n and hole raceway groove, and wherein these two kinds of structures are powered with about 15mA between terminal o, w.Wherein sample (Probe) (1) for example produces the light radiant flux of about 1.4nW with the nanocluster of about 150 radiation.In this was used, corresponding TEMPOS structure was reacted as photodiode when additional input light radiant flux, in next development procedure, can realize based on the structure TEMPOS structure, that be used for the optoelectronic transceivers of communication technology application like this.Figure 34 illustrates the application as the oscillation circuit of changeable frequency of TEMPOS structure.The variation (voltage-controlled nanocluster electric capacity) of passing through the voltage that applied can realize confirmable oscillation circuit in down between high-frequency range 500MHz and the 800MHz at least.The TEMPOS structure also can be used for high frequency thus.
Figure 35 shows a kind of simple amplifier that has based on the element of the TEMPOS structure that has the negativity differential resistor (NERPOS structure).Show the result of voltage amplification coefficient in the latter half of figure.For an amplifier, only need be based on two contacts (for example v and o) of the element of NERPOS structure; The 3rd contact (for example w) is placed on the current potential of adjacent contacts especially or is changed to zero potential in order not produce undefined electric potential relation.Such fact promptly as long as two contact structures based on the new element of NERPOS structure (Kontaktiemngen) just enough realize amplifying circuit, is compared the wiring of greatly having simplified circuit with transistor circuit (seeing below).Because according to needs the 3rd contact not in the amplifier circuit of Figure 35, has such possibility on the one hand, be about to upward be arranged on whole insulator surface in large area (for the contact (v) doing too) of reverse side, to form high performance element in the contact of unique needs at the hole face (for example o) of element.Unwanted in amplifier circuit on the other hand, be used as such based on the 3rd contact (for example w) of the element of NERPOS structure, make with realize by contact v and o according to the amplifier of Figure 35 abreast, drive one second amplifier of the same type by contact v and w.In this compound amplifier circuit, can walk abreast based on the element of NERPOS structure and to finish two different tasks.In this case, though owing to beat (Schwebung) may occur in the capacitive coupling of element internal, yet the layout of the suitable structure that it can be by the NERPOS structure is minimized.
Above mentioning the special advantage that has according to the element of semiconductor composite construction of the present invention, the circuit under promptly need significantly still less add ons and traditional relatively thus circuit by structure significantly more simplifiedly.Figure 36 illustrates simple, have based on the comparison between the pierce circuit of the element of NERPOS structure and the traditional pierce circuit with transistor electronic equipment.The circuit (last figure) that has based on the element of NERPOS structure only needs four elements, and (figure below) needs the element of twice quantity in traditional circuit.
Also can make up oscillator by the NERPOS structure.Still only need in the standard implementation form two in three contacts in this case, so also may make up compound oscillator (referring to Figure 37).The formation that also is noted that beat in this case is combined in the planning based on the element of NERPOS structure by suitable capacitor decoupling and has been prevented from.Nature, also can modulate by the vibration that the element based on the NERPOS structure generates by the signal that the outside applies, as (last figure is a circuit structure in Figure 38, figure below is the signal change curve) shown in the situation of the low-frequency oscillator (=radio transmitter) of amplitude modulation(PAM) like that, show so in principle all types of at the transmitter place, based on the application of the element of NERPOS structure.
Figure 39 has indicated with the circuit diagram (last figure) of saw-toothed wave generator in addition, not only can realize the sinusoid vibration, but also can realize other oscillation form with the NERPOS structure, as sawtooth waveforms vibration (figure below is the signal change curve).
The negativity differential resistor of last NERPOS structure can also realize driving digital electronic device, as among Figure 40 by optical trigger (not having light incident also can drive a common electronic trigger) shown (S/R set/reset).The latter half at Figure 40 shows current-voltage characteristic curve.Suppose that the working point is at A
1Go up (FF opens trigger).Subsequent working point by a weak point (this: negative) pulse is to moving to left, it enters the range of instability and only at A like this
2Place's (SF closes trigger) settles out again, and wherein the position of A2 can be regulated by non-essential resistance.Similarly, Duan positive pulse can be pushed the working point to A again
1Switching time is very little; It is at the order of magnitude of psec.Can also realize the circuit of bistable with the NERPOS structure, as disclosed already in having transistorized digital electronic device.Thus in principle may, based on TEMPOS structure, be so-called NERPOS structure, for there not being transistorized computer construction active element with negativity differential resistor.Significantly littler element and wiring expense can be so that the computer that this mode makes up has competitiveness in corresponding crystal pipe circuit for switching time that is exceedingly fast and ratio.
Ensuing Figure 41 to 47 relates to the MOSBIT structure, promptly constitute by electrical insulating material the layer the surface on fullerene as the conduction material and the TEMPOS structure of in hole, arranging.Similar with light incident, the MOSBIT structure also produces a voltage when having humidity, and this voltage disappears again when humidity reduces.Because the sensor material C of humidity sensitive
60(fullerene) applied by very thin surface ground, and is not as thick-layer, so the diffusion process of the steam in fullerene is reduced to minimum degree, like this this transducer have very short, less than one second response time.The reason of the voltage of this wet quick battery based on the MOSBIT structure can belong to the C that depends on environment
60/ Si touch voltage.This characteristic can be used in structure humidity voltage driver.When wet quick battery was placed in ethanol or the acetone damp steam, it produced voltage equally, yet its symbol is opposite.Thus, the humidity of organic gas steam can be distinguished.As the TEMPOS structure with nanocluster realized, the MOSBIT structure also can be discerned the sensor characteristics of resistance, inductance and electric capacity.Correspondingly, not only can Production Example such as humidity-resistive-transducer, humidity-inductive-transducer, but also can make humidity-capacitive character-transducer.At last, it is significant capacitive variation being converted to frequency change.The variation of the conductive capability of last MOSBIT structure also can be used to produce the humidity current conversion.
Figure 41 illustrates a kind of frequency numeral gas sensor, wherein with fullerene (C60) by surface-coated and do not have direct current ground MOSBIT structure driving, that have nanocluster with its electric capacity that depends on gas at MHz scope inner control oscillation circuit.Are direct digital metrics two available frequencies of oscillation in breakout place thus for gas concentration.
Figure 42 illustrates an analog electrical perception gas sensor amplifier, it will be converted into measurable voltage with the change of the electric conductivity value MOSBIT structure, that the depend on gas concentration C60 covering surfaces, that have nanocluster, and offer two breakouts.
Figure 43 illustrates the gas-electric current-switching amplifier of a simulation, it will be converted into measurable voltage with (generatorisch) short circuit current of generation in the MOSBIT structure C60 covering surfaces, that have nanocluster, that depend on gas concentration and offer two breakouts.
Figure 44 illustrates a resistive gas sensor amplifier of analog electrical, it will be converted into measurable voltage with the resistance change MOSBIT structure, that the depend on gas concentration C60 covering surfaces, that have nanocluster, and offer two breakouts.
Figure 45 illustrates the gas-voltage-switching amplifier of a simulation, but the surface that it will cover with C60, have nanocluster the MOSBIT structure, that depend on gas concentration and the floating voltage load low-resistance that generates offer two breakouts.
Figure 46 illustrates the gas voltage battery with the MOSBIT structure C60 surface coverage, that have nanocluster, it is being used under the bigger gas concentration situation and can be applied to the electric current supply by the working voltage branch road.
Figure 47 illustrates solar cell with the MOSBIT structure C60 surface coverage, that have nanocluster, it input during light radiation not only as radiation receiver, and can supply be employed as electric current by the working voltage branch road.Moving of indicatrix appearred when (representing by φ) in light incident.When identical incident intensity, this moves relevant with wavelength (representing by λ), can realize not having the structure of the spectrometer of optics movable part, novel compactness so thus.
In general, however describe in front, be not in the kind of the semiconductor components and devices that is considered as finishing, widely as can be seen according to the huge flexibility of semiconductor composite construction of the present invention and unified application form thereof.Combine with novel semi-conductor structure according to the present invention, also can provide new, inexpensive thus, simply can make and the kind of controllable semiconductor components and devices.Do not consider that large-scale accelerator is used to generate ion trajectory, the manufacturing of these structures only needs wet-chemical, and need not clean room's condition and vacuum condition.
List of reference characters
The DNP nanoparticle
The ECM conductive material
The adjoining course that EIL is made of electrically insulating material
MOSBIT has the wet sensitivities of bucky-ball fullerene in ion trajectory
NERPOS on semiconductor at the negativity resistance of oxide mesopore
O, v, w electrode, terminal
The SCS Semiconductor substrate
TEMPOS has hole, adjustable electronic material at semiconductor
The VP hole
Claims (23)
1. the semiconductor composite construction determined of parameter, has at least one Semiconductor substrate, this Semiconductor substrate has the layer on the plane of selectable p type or the doping of n type and a conductive capability and an adjacency, the layer on this plane is by electric insulation, material with the integrated doped channel of perpendicular constitutes, a kind of electric conducting material with selectable conductive capability is placed in these doped channels, wherein charge carrier moves in this semiconductor composite construction, and this composite construction also has by a plurality of on the described layer that is made of electrical insulating material and the electric contact structure that constitutes of the electrode that is provided with on described Semiconductor substrate
It is characterized in that, these doped channels are constructed to have selectable distribution in the layer (EIL) that described material by electric insulation constitutes, and has a selectable pore diameter, the nano level hole (VP) of the hole degree of depth and pore shape, and described material by electric insulation constitute the layer (EIL) the surface with insert in these holes (VP) material or with other, the material (ECM) that still shows the high resistant characteristic of conduction covers under the situation that produces a selectable resistance, this resistance has stoped charge carrier to be positioned on the layer (EIL) that described material by electric insulation constitutes at two, be provided with separatedly mutually, structurized top electrode (o, substantially horizontal migration v), between these two electrodes, selectable applying by different current potentials produces a selectable potential change, yet this resistance is supported in the middle charge carrier of this semiconductor composite construction (PSC) to being set on this Semiconductor substrate, the migration of the perpendicular of structurized bottom electrode (w).
2. the semiconductor composite construction definite according to the parameter of claim 1, it is characterized in that, the material of this conduction (ECM) is configured with selectable size with the form of nanocluster (DNC), and is placed in the described hole (VP) and is applied on the layer (EIL) that described material by electric insulation constitutes with selectable minute bulk density.
3. the semiconductor composite construction of determining according to the parameter of claim 2 is characterized in that, all nanoclusters (DNC) of the material of this conduction (ECM) are positioned at identical selecteed size range and/or are provided with by the ground that distributes equidistantly.
4. the semiconductor composite construction definite according to the parameter of one of claim 1 to 3, it is characterized in that the material of this conduction (ECM) is the oxide of a kind of equally distributed or the metal of dispersed and distributed, a kind of semi-conducting material or its compound, a kind of chalcogen (Chalkogen) or its compound, a kind of carbon allotrope, a kind of oxide semiconductor, a kind of conduction, metal-doped porphyry compound or polypyrrole compound, a kind of actuator material, a kind of mixture that is made of acacia gum and a kind of slaine or their a kind of mixed form.
5. the semiconductor composite construction definite according to the parameter of one of claim 1 to 4, it is characterized in that, such nanocluster (DNC) is set in some narrow holes (VP), makes the indicatrix of the semiconductor composite construction that this parameter is determined demonstrate local difference negative resistance property.
6. the semiconductor composite construction of determining according to the parameter of one of claim 1 to 5 is characterized in that, the material of this conduction (ECM) is replenished or substitutes material specific material sensitive, that have conductive capability by a kind of.
7. the semiconductor composite construction of determining according to the parameter of claim 6 is characterized in that this specific material is humidity, steam or a kind of gas.
8. the semiconductor composite construction definite according to the parameter of one of claim 4 to 7, it is characterized in that, the nanometer tubule is grown out by the fullerene in these holes (VP), wherein this growth can by nickel-nanocrystal begin and surpass these holes (VP) the edge advance.
9. the definite semiconductor composite construction of parameter according to Claim 8 is characterized in that, these nanometer tubules have bending or other defective in predetermined position.
10. the semiconductor composite construction of determining according to the parameter of one of claim 4 to 7 is characterized in that the flexible nano wire that is made of a kind of metal or a kind of semiconductor is placed in these holes (VP).
11. the semiconductor composite construction definite according to the parameter of one of claim 1 to 10, it is characterized in that, the surface of the layer (EIL) that described material by electric insulation constitutes covers with material (ECM) the island ground of this conduction, and wherein (o, v) the coating between is disconnected fully at these two top electrodes.
12. the semiconductor composite construction definite according to the parameter of one of claim 1 to 11, it is characterized in that, the material of this electric insulation (EIL) is a kind of silicon compound, particularly silicon oxynitride, perhaps a kind of carbon allotrope, particularly diamond, perhaps a kind of polymer, particularly photoresist or polyimides.
13. the semiconductor composite construction according to the parameter of one of claim 1 to 12 is determined is characterized in that the material of this electric insulation (EIL) is constructed to the metal oxide of porous, particularly aluminium oxide, perhaps is constructed to molecular sieve, particularly mesopore silicon oxide.
14. the semiconductor composite construction according to the parameter of one of claim 1 to 13 is determined is characterized in that this Semiconductor substrate (SCS) is the silicon of rare oxygen or cuts krousky-silicon.
15. the semiconductor composite construction definite according to the parameter of one of claim 1 to 14, it is characterized in that, cover respectively different physical-chemical parameters scope, particularly be adjacent to be arranged on the common Semiconductor substrate (SCS) in the zone that different parameters aspect the selection of the material (ECM) of this conduction is determined.
16. the semiconductor composite construction definite according to the parameter of one of claim 1 to 15, it is characterized in that, from the teeth outwards except two top electrode (o, a v) outer source electrode and drain electrode of also being provided with, wherein they or have with the direct of doped regions in this Semiconductor substrate and contact, perhaps the hole that forms by low-resistance ground contacts with unadulterated Semiconductor substrate, and these three electrode (o, v one of w) additionally is constructed to control electrode.
17. the semiconductor composite construction definite according to the parameter of one of claim 1 to 16, it is characterized in that, with layer and this Semiconductor substrate (SCS) adjacency thin, electric insulation, layer wherein should be thin, electric insulation is constructed to sull or insulator film to described hole of filling with material semiconductive or conduction in the layer that the material by described electric insulation constitutes, being constructed to the rest layers of the layer (EIL) that described material by electric insulation constitutes or being constructed to have one can easily etched layer and double-deck a layer of being difficult to etched layer.
18. the semiconductor composite construction according to the parameter of one of claim 1 to 17 is determined is characterized in that, in these holes (VP), conduct electricity or semiconductive nanocluster (DNC) centered on a kind of shell of electric insulation.
19. the semiconductor composite construction definite according to the parameter of one of claim 1 to 18, it is characterized in that, described material by electric insulation constitute the layer (EIL) in not penetratingly the structure and conduction or the semiconductive hole that is filled (VP) and this Semiconductor substrate (SCS) between deposited metal cluster.
20. be used for particularly according to claim 1 to 19, the method of the semiconductor composite construction that Fabrication parameter is determined, this semiconductor composite construction has at least one Semiconductor substrate, this Semiconductor substrate has the layer on the plane of selectable p type or the doping of n type and a conductive capability and an adjacency, the layer on this plane is by electric insulation, material with the integrated doped channel of perpendicular constitutes, a kind of electric conducting material with selectable conductive capability is placed in these doped channels, its complementary carrier mobility enters in this Semiconductor substrate, this composite construction also has by a plurality of on the described layer that is made of electrical insulating material and the electric contact structure that constitutes of the electrode that is provided with on this Semiconductor substrate, has these processing steps:
I. the layer that a material by electric insulation is constituted is applied on the Semiconductor substrate of a p type or the doping of n type
II. in the layer that this material by electric insulation constitutes, produce doped channel
III. in these doped channels and on the layer that this material by electric insulation constitutes, apply a coating that constitutes by the material that conducts electricity, and
IV. this material by electric insulation constitute the layer on and on this Semiconductor substrate, apply electrode,
It is characterized in that processing step I carries out under temperature range is technological temperature in 200 ℃ to 300 ℃ by a kind of plasma chemical vapor deposition, and/or
Processing step II carries out with Heavy Ion Radiation by the layer (EIL) that described material by this electric insulation is constituted, doped channel is configured to nano level hole (VP), these holes have selectable distribution in the layer (EIL) that the material by electric insulation constitutes, and have selectable pore diameter, the hole degree of depth and pore shape, wherein these hole parameters can be regulated by the selection of radiation parameter.
21. method according to claim 20, it is characterized in that, in order to construct doped channel, follow the etching that ion trajectory is carried out in described radiation afterwards in described processing step II, wherein these hole parameters can be regulated by the selection of the selection of etching parameter, particularly etching duration.
22. the method according to claim 20 or 21 is characterized in that, in described processing step III, is applied in these doped channels and is applied on the layer that this material by electric insulation constitutes by the different coating that constitutes of material of conduction.
23. particularly according to one of in the claim 1 to 19, the application of the semiconductor composite construction that parameter is determined, wherein this semiconductor composite construction has at least one Semiconductor substrate, this Semiconductor substrate has the layer on the plane of selectable p type or the doping of n type and a conductive capability and an adjacency, the layer on this plane is by electric insulation, material with the integrated doped channel of perpendicular constitutes, electric conducting material with selectable conductive capability is placed in these doped channels, its complementary carrier mobility enters in this Semiconductor substrate, this composite construction also has by a plurality of on the described layer that is made of electrical insulating material and the electric contact structure that constitutes of the electrode that is provided with on Semiconductor substrate, it is characterized in that a kind of function, this function is: simple at one, have in the circuit arrangement of additional switch element of the least possible quantity as electronics, active or passive element, particularly as transistor, capacitor, resistance, in the structure of amplifier or oscillation circuit, as photoelectric cell, particularly in structure as optical transmitting set or photodetector, as wet electronic component, particularly in structure as wet quick battery, perhaps as the element of transducer, particularly in structure as sensor battery, as digital element, particularly as trigger, perhaps as these combination of elements, wherein the formation of function corresponding is determined by the parameter of this semiconductor composite construction (PSC), the particularly formation of the doped channel by hole (VP) and coating form and pass through the working point, the partly adjusting of the variation by applying parameter and by structuring with by electrode (o, v, w) configuration constitutes, and wherein coating is made of the electric conducting material (ECM) with nanocluster (DNC) form.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE10325150.2 | 2003-05-31 | ||
| DE10325150A DE10325150A1 (en) | 2003-05-31 | 2003-05-31 | Parameterized semiconductor composite structure with integrated doping channels, process for the production and use thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1802758A true CN1802758A (en) | 2006-07-12 |
Family
ID=33482463
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA200480015110XA Pending CN1802758A (en) | 2003-05-31 | 2004-05-18 | Parameterised semiconductor structure comprising integrated doping channels, method for producing said structure and use thereof |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP1629270A2 (en) |
| JP (1) | JP2006526279A (en) |
| KR (1) | KR20060017826A (en) |
| CN (1) | CN1802758A (en) |
| DE (1) | DE10325150A1 (en) |
| WO (1) | WO2004109807A2 (en) |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101950793A (en) * | 2010-08-10 | 2011-01-19 | 电子科技大学 | Photodiode and preparation method thereof |
| CN103258958A (en) * | 2013-05-13 | 2013-08-21 | 北京大学 | Organic resistive random access memory and manufacturing method thereof |
| CN103376283A (en) * | 2013-07-22 | 2013-10-30 | 中国科学院苏州纳米技术与纳米仿生研究所 | Detection method of trace quantity H2O in ionic liquid |
| CN105474006A (en) * | 2013-05-29 | 2016-04-06 | Csir公司 | Field-effect transistor and gas detector comprising a plurality of field-effect transistors |
| CN106556627A (en) * | 2015-01-22 | 2017-04-05 | 江西师范大学 | Sensor based on nano material |
| CN101925994B (en) * | 2008-01-21 | 2017-05-17 | 硅绝缘技术公司 | Method of fabricating composite structure with stable bonding layer of oxide |
| CN107664624A (en) * | 2016-07-29 | 2018-02-06 | 重庆医科大学 | The other near-infrared spectral analytical method of mammalian is differentiated based on gas |
| CN107750403A (en) * | 2015-06-19 | 2018-03-02 | 德累斯顿工业技术大学 | Organic photodetector and its production method |
| CN109082084A (en) * | 2018-07-04 | 2018-12-25 | 温州大学 | A kind of polymeric membrane and preparation method thereof with nano pore |
| CN111051871A (en) * | 2017-08-01 | 2020-04-21 | 伊鲁米纳公司 | Field effect sensor |
| CN112687826A (en) * | 2020-12-25 | 2021-04-20 | 北京量子信息科学研究院 | Preparation method of quantum dot device and quantum dot device |
| CN112909116A (en) * | 2021-01-18 | 2021-06-04 | 华中科技大学 | Field-effect tube photoelectric detector based on dielectric layer response |
| CN115064602A (en) * | 2022-06-29 | 2022-09-16 | 中国电子科技集团公司第四十四研究所 | Single photon avalanche photodiode and manufacturing method thereof |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4792695B2 (en) * | 2003-11-28 | 2011-10-12 | 株式会社豊田中央研究所 | Quantum device and manufacturing method thereof |
| DE102005043397B3 (en) * | 2004-08-13 | 2007-01-11 | Hahn-Meitner-Institut Berlin Gmbh | Electronic active sensor with nano-pore array, e.g. for selective detection of magnetic fields, has high impedance conductive layer on surface of dielectric and ferrous fluid in nano-pores |
| DE102005015276B4 (en) * | 2005-03-26 | 2006-12-07 | Hahn-Meitner-Institut Berlin Gmbh | Device for cleaning liquids |
| DE102005040294A1 (en) * | 2005-08-21 | 2007-02-22 | Hahn-Meitner-Institut Berlin Gmbh | Capacitive nano-sensor, e.g. for measuring capacitance between capacitor surfaces, has capacitively active sensor material applied to dielectric surfaces and in voids |
| DE102005040293B3 (en) * | 2005-08-21 | 2006-09-21 | Hahn-Meitner-Institut Berlin Gmbh | Sound sensor has magnetoresistive sensor whereby sensor material of magnetoresistive sensor is an electrically anisotropic conductor, whereby the electric field and the magnetic field is applied to sensor material |
| DE102005040297B3 (en) * | 2005-08-21 | 2007-02-08 | Hahn-Meitner-Institut Berlin Gmbh | Micro-channel plate used in a portable miniaturized electron microscope comprises micro-pores completely penetrated by a dielectric support layer which is held as a freely supported membrane in a semiconductor substrate |
| FR2890438B1 (en) * | 2005-09-08 | 2007-11-30 | Peugeot Citroen Automobiles Sa | SENSOR STRUCTURE, IN PARTICULAR FOR A SEVERE ENVIRONMENT IN A MOTOR VEHICLE AND PREHEATING PLUG COMPRISING SUCH A SENSOR |
| GB0611560D0 (en) * | 2006-06-12 | 2006-07-19 | Univ Belfast | Improvements relating to plasmonic coupling devices |
| DE102006047358A1 (en) * | 2006-09-29 | 2008-04-10 | Hahn-Meitner-Institut Berlin Gmbh | Switching configuration for voltage pulse generation has full bridge structure applied with voltage ramp at input and which includes two resistances arranged in two arms at one side of diagonals for generating voltage pulse |
| DE102007052565A1 (en) * | 2007-11-03 | 2009-05-20 | Fahrner, Wolfgang R., Prof. Dr. | Two-dimensional position-sensitive radiation sensor for detection of position and radiant power, has nano-scaled tunable electronic material with pores on silicon-radiation sensor material |
| JP5505609B2 (en) * | 2009-09-15 | 2014-05-28 | 一般財団法人ファインセラミックスセンター | Zeolite and process for producing the same |
| CN102142461B (en) * | 2011-01-07 | 2013-01-30 | 清华大学 | Grid controlled Schottky junction tunneling field effect transistor and forming method thereof |
| DE102011015942B3 (en) | 2011-04-02 | 2012-02-16 | Karlsruher Institut für Technologie | Pressure probe for detection of natural methane hydrate in sediments at bottom of sea water, has temperature sensor and permittivity sensor provided in thermal contact with each other, and provided with insulation layer at surface |
| DE102011054501A1 (en) * | 2011-10-14 | 2013-04-18 | Heinrich-Heine-Universität Düsseldorf | Sensor and method for manufacturing a sensor |
| DE102012108997A1 (en) * | 2012-09-24 | 2014-03-27 | Heinrich-Heine-Universität Düsseldorf | Sensor arrangement and method for producing a sensor arrangement |
| EP3101695B1 (en) | 2015-06-04 | 2021-12-01 | Nokia Technologies Oy | Device for direct x-ray detection |
| EP3206235B1 (en) | 2016-02-12 | 2021-04-28 | Nokia Technologies Oy | Method of forming an apparatus comprising a two dimensional material |
| KR101983848B1 (en) * | 2017-11-22 | 2019-05-29 | 부경대학교 산학협력단 | Oscillating circuit based on 2-terminal unit device and measuring method of temperature and pressure using the oscillating circuit |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2501913A1 (en) * | 1981-03-10 | 1982-09-17 | Thomson Csf | PLANAR TYPE FIELD EFFECT TRANSISTOR COMPRISING METALLIZED WELL ELECTRODES AND METHOD OF MANUFACTURING THE TRANSISTOR |
| US5111254A (en) * | 1990-08-17 | 1992-05-05 | Gte Laboratories Incorporated | Floating gate array transistors |
| US5329214A (en) * | 1992-08-28 | 1994-07-12 | Compaq Computer Corporation | Motor drive circuit |
| US5705321A (en) * | 1993-09-30 | 1998-01-06 | The University Of New Mexico | Method for manufacture of quantum sized periodic structures in Si materials |
| US6734451B2 (en) * | 1993-11-02 | 2004-05-11 | Matsushita Electric Industrial Co., Ltd. | Aggregate of semiconductor micro-needles and method of manufacturing the same, and semiconductor apparatus and method of manufacturing the same |
| JP3902883B2 (en) * | 1998-03-27 | 2007-04-11 | キヤノン株式会社 | Nanostructure and manufacturing method thereof |
| US6705152B2 (en) * | 2000-10-24 | 2004-03-16 | Nanoproducts Corporation | Nanostructured ceramic platform for micromachined devices and device arrays |
| EP1096569A1 (en) * | 1999-10-29 | 2001-05-02 | Ohnesorge, Frank, Dr. | Quantum wire array, uses thereof, and methods of making the same |
| US6919119B2 (en) * | 2000-05-30 | 2005-07-19 | The Penn State Research Foundation | Electronic and opto-electronic devices fabricated from nanostructured high surface to volume ratio thin films |
| DE10123876A1 (en) * | 2001-05-16 | 2002-11-28 | Infineon Technologies Ag | Nanotube array comprises a substrate, a catalyst layer having partial regions on the surface of the substrate, nanotubes arranged on the surface of the catalyst layer parallel |
-
2003
- 2003-05-31 DE DE10325150A patent/DE10325150A1/en not_active Withdrawn
-
2004
- 2004-05-18 WO PCT/DE2004/001070 patent/WO2004109807A2/en active Application Filing
- 2004-05-18 CN CNA200480015110XA patent/CN1802758A/en active Pending
- 2004-05-18 JP JP2006508111A patent/JP2006526279A/en active Pending
- 2004-05-18 EP EP04738540A patent/EP1629270A2/en not_active Withdrawn
- 2004-05-18 KR KR1020057022827A patent/KR20060017826A/en not_active Application Discontinuation
Cited By (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101925994B (en) * | 2008-01-21 | 2017-05-17 | 硅绝缘技术公司 | Method of fabricating composite structure with stable bonding layer of oxide |
| CN101950793A (en) * | 2010-08-10 | 2011-01-19 | 电子科技大学 | Photodiode and preparation method thereof |
| CN101950793B (en) * | 2010-08-10 | 2012-05-30 | 电子科技大学 | Photodiode and preparation method thereof |
| CN103258958B (en) * | 2013-05-13 | 2015-09-23 | 北京大学 | Organic resistive random access memory and preparation method thereof |
| CN103258958A (en) * | 2013-05-13 | 2013-08-21 | 北京大学 | Organic resistive random access memory and manufacturing method thereof |
| CN105474006A (en) * | 2013-05-29 | 2016-04-06 | Csir公司 | Field-effect transistor and gas detector comprising a plurality of field-effect transistors |
| CN103376283A (en) * | 2013-07-22 | 2013-10-30 | 中国科学院苏州纳米技术与纳米仿生研究所 | Detection method of trace quantity H2O in ionic liquid |
| CN103376283B (en) * | 2013-07-22 | 2015-10-28 | 中国科学院苏州纳米技术与纳米仿生研究所 | Trace H in a kind of ionic liquid 2the detection method of O |
| CN106556627A (en) * | 2015-01-22 | 2017-04-05 | 江西师范大学 | Sensor based on nano material |
| CN107750403A (en) * | 2015-06-19 | 2018-03-02 | 德累斯顿工业技术大学 | Organic photodetector and its production method |
| CN107664624A (en) * | 2016-07-29 | 2018-02-06 | 重庆医科大学 | The other near-infrared spectral analytical method of mammalian is differentiated based on gas |
| CN111051871A (en) * | 2017-08-01 | 2020-04-21 | 伊鲁米纳公司 | Field effect sensor |
| CN109082084A (en) * | 2018-07-04 | 2018-12-25 | 温州大学 | A kind of polymeric membrane and preparation method thereof with nano pore |
| CN112687826A (en) * | 2020-12-25 | 2021-04-20 | 北京量子信息科学研究院 | Preparation method of quantum dot device and quantum dot device |
| CN112687826B (en) * | 2020-12-25 | 2024-06-07 | 北京量子信息科学研究院 | Preparation method of quantum dot device and quantum dot device |
| CN112909116A (en) * | 2021-01-18 | 2021-06-04 | 华中科技大学 | Field-effect tube photoelectric detector based on dielectric layer response |
| CN112909116B (en) * | 2021-01-18 | 2023-08-04 | 华中科技大学 | Field effect transistor photoelectric detector based on dielectric layer response |
| CN115064602A (en) * | 2022-06-29 | 2022-09-16 | 中国电子科技集团公司第四十四研究所 | Single photon avalanche photodiode and manufacturing method thereof |
| CN115064602B (en) * | 2022-06-29 | 2023-11-14 | 中国电子科技集团公司第四十四研究所 | Single photon avalanche photodiode and method of manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| EP1629270A2 (en) | 2006-03-01 |
| WO2004109807A2 (en) | 2004-12-16 |
| DE10325150A1 (en) | 2004-12-30 |
| KR20060017826A (en) | 2006-02-27 |
| JP2006526279A (en) | 2006-11-16 |
| WO2004109807A3 (en) | 2005-02-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN1802758A (en) | Parameterised semiconductor structure comprising integrated doping channels, method for producing said structure and use thereof | |
| Lin et al. | Piezo‐phototronic effect for enhanced flexible MoS2/WSe2 van der Waals photodiodes | |
| Huang et al. | Gallium nitride nanowire nanodevices | |
| Cheng et al. | Mutlicolor electroluminescent Si quantum dots embedded in SiO x thin film MOSLED with 2.4% external quantum efficiency | |
| EP0887867B1 (en) | Semiconductor device comprising an aggregate of semiconductor micro-needles | |
| Dufouleur et al. | P-doping mechanisms in catalyst-free gallium arsenide nanowires | |
| Pearton et al. | The promise and perils of wide‐bandgap semiconductor nanowires for sensing, electronic, and photonic applications | |
| Pradel et al. | Optoelectronic properties of solution grown ZnO np or pn core–shell nanowire arrays | |
| US20070235738A1 (en) | Nanowire light emitting device and method of fabricating the same | |
| US20130134440A1 (en) | High-resolution Parallel-detection Sensor Array Using Piezo-Phototronics Effect | |
| Chan et al. | Electroluminescence from ZnO-nanofilm/Si-micropillar heterostructure arrays | |
| Du et al. | Recent Progress on Piezotronic and Piezo‐Phototronic Effects in III‐Group Nitride Devices and Applications | |
| CN103760336A (en) | Linear array ZnO (zinc oxide) nanowire heterojunction LED (light emitting diode) biosensor and preparation method thereof | |
| CN108550593A (en) | A kind of double-colored optical detector of graphene-quantum dot and preparation method thereof based on composite construction | |
| Wang et al. | Strongly enhanced tunable photoluminescence in polymorphous silicon carbon thin films via excitation-transfer mechanism | |
| Lai et al. | Multicolor ${\rm ITO}/{\rm SiO} _ {x}/{\rm p}\hbox {-}{\rm Si}/{\rm Al} $ Light Emitting Diodes With Improved Emission Efficiency by Small Si Quantum Dots | |
| Ogura et al. | Multilayer in-plane heterostructures based on transition metal dichalcogenides for advanced electronics | |
| Ou et al. | Spatial Control of Dynamic p–i–n Junctions in Transition Metal Dichalcogenide Light-Emitting Devices | |
| Yang et al. | Native oxide seeded spontaneous integration of dielectrics on exfoliated black phosphorus | |
| Kuhs et al. | In situ photoluminescence of colloidal quantum dots during gas exposure—the role of water and reactive atomic layer deposition precursors | |
| Chen et al. | Passivated interfacial traps of monolayer MoS2 with bipolar electrical pulse | |
| Fan et al. | Negative Electro-Conductance in Suspended 2D WS2 Nanoscale Devices | |
| Zhang et al. | Observation of single-electron transport and charging on individual point defects in atomically thin WSe2 | |
| Lin et al. | Synthesis of Si nanopyramids at SiOx∕ Si interface for enhancing electroluminescence of Si-rich SiOx | |
| Kim et al. | Electroluminescence of atoms in a graphene nanogap |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |