CN115064199B - 用于非易失性存储器的用户可配置的耗损均衡的系统、方法和设备 - Google Patents

用于非易失性存储器的用户可配置的耗损均衡的系统、方法和设备 Download PDF

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CN115064199B
CN115064199B CN202210572068.1A CN202210572068A CN115064199B CN 115064199 B CN115064199 B CN 115064199B CN 202210572068 A CN202210572068 A CN 202210572068A CN 115064199 B CN115064199 B CN 115064199B
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memory
wear
leveling
sectors
wear leveling
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CN115064199A (zh
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马克·麦克莱恩
威利·奥伯莱纳
瑞纳·赫勒尔
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Infineon Technology Co ltd
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Infineon Technology Co ltd
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/349—Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
    • G11C16/3495—Circuits or methods to detect or delay wearout of nonvolatile EPROM or EEPROM memory devices, e.g. by counting numbers of erase or reprogram cycles, by using multiple memory areas serially or cyclically
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0602—Interfaces specially adapted for storage systems specifically adapted to achieve a particular effect
    • G06F3/0614—Improving the reliability of storage systems
    • G06F3/0616—Improving the reliability of storage systems in relation to life time, e.g. increasing Mean Time Between Failures [MTBF]
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
    • G06F12/023—Free address space management
    • G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
    • G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/06—Addressing a physical block of locations, e.g. base addressing, module addressing, memory dedication
    • G06F12/0646—Configuration or reconfiguration
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
    • G06F3/0638—Organizing or formatting or addressing of data
    • G06F3/064—Management of blocks
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
    • G06F3/0638—Organizing or formatting or addressing of data
    • G06F3/0644—Management of space entities, e.g. partitions, extents, pools
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
    • G06F3/0646—Horizontal data movement in storage systems, i.e. moving data in between storage devices or systems
    • G06F3/0647—Migration mechanisms
    • G06F3/0649—Lifecycle management
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
    • G06F3/0653—Monitoring storage devices or systems
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0668—Interfaces specially adapted for storage systems adopting a particular infrastructure
    • G06F3/0671—In-line storage system
    • G06F3/0673—Single storage device
    • G06F3/0679—Non-volatile semiconductor memory device, e.g. flash memory, one time programmable memory [OTP]
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0668—Interfaces specially adapted for storage systems adopting a particular infrastructure
    • G06F3/0671—In-line storage system
    • G06F3/0683—Plurality of storage devices
    • G06F3/0688—Non-volatile semiconductor memory arrays
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/10—Providing a specific technical effect
    • G06F2212/1041—Resource optimization
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/72—Details relating to flash memory management
    • G06F2212/7201—Logical to physical mapping or translation of blocks or pages
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/72—Details relating to flash memory management
    • G06F2212/7211—Wear leveling

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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Human Computer Interaction (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Memory System (AREA)
CN202210572068.1A 2016-10-03 2017-08-09 用于非易失性存储器的用户可配置的耗损均衡的系统、方法和设备 Active CN115064199B (zh)

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US201662403340P 2016-10-03 2016-10-03
US62/403,340 2016-10-03
US15/388,892 US10489064B2 (en) 2016-10-03 2016-12-22 Systems, methods, and devices for user configurable wear leveling of non-volatile memory
US15/388,892 2016-12-22
CN201780056864.7A CN109716281B (zh) 2016-10-03 2017-08-09 用于非易失性存储器的用户可配置的耗损均衡的系统、方法和设备
PCT/US2017/046142 WO2018067230A1 (en) 2016-10-03 2017-08-09 Systems, methods, and devices for user configurable wear leveling of non-volatile memory
CN202210572068.1A CN115064199B (zh) 2016-10-03 2017-08-09 用于非易失性存储器的用户可配置的耗损均衡的系统、方法和设备

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JP (2) JP6816253B2 (https=)
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Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10489064B2 (en) * 2016-10-03 2019-11-26 Cypress Semiconductor Corporation Systems, methods, and devices for user configurable wear leveling of non-volatile memory
US10832753B2 (en) * 2017-07-31 2020-11-10 General Electric Company Components including structures having decoupled load paths
US10198195B1 (en) * 2017-08-04 2019-02-05 Micron Technology, Inc. Wear leveling
US10409716B2 (en) 2017-10-11 2019-09-10 Western Digital Technologies, Inc. Non-volatile memory with adaptive wear leveling
US11056206B2 (en) * 2017-10-11 2021-07-06 Western Digital Technologies, Inc. Non-volatile memory with dynamic wear leveling group configuration
US10656844B2 (en) 2017-10-11 2020-05-19 Western Digital Technologies, Inc. Non-volatile memory with regional and inter-region wear leveling
US10620867B2 (en) * 2018-06-04 2020-04-14 Dell Products, L.P. System and method for performing wear leveling at a non-volatile firmware memory
CN110187999B (zh) * 2019-05-09 2021-04-27 新华三技术有限公司 地址映射数据备份方法及装置
US11436153B2 (en) * 2020-05-26 2022-09-06 Western Digital Technologies, Inc. Moving change log tables to align to zones
US11314446B2 (en) * 2020-06-25 2022-04-26 Micron Technology, Inc. Accelerated read translation path in memory sub-system
JP2022074450A (ja) * 2020-11-04 2022-05-18 キオクシア株式会社 メモリカード、メモリシステム、及びファイルの断片化解消方法
CN113127377B (zh) * 2021-04-08 2022-11-25 武汉导航与位置服务工业技术研究院有限责任公司 一种非易失存储器件写擦除的磨损均衡方法
DE102021120381A1 (de) 2021-08-05 2023-02-09 Harman Becker Automotive Systems Gmbh Vorrichtung und Verfahren zur Verwaltung eines Speichers
US20230073503A1 (en) * 2021-09-07 2023-03-09 Micron Technology, Inc. Security file system for a memory system
JP2023153674A (ja) 2022-04-05 2023-10-18 キオクシア株式会社 メモリシステム
US12009038B2 (en) * 2022-04-20 2024-06-11 Micron Technology, Inc. Memory device wear leveling

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101794256A (zh) * 2009-02-04 2010-08-04 超捷公司 非易失性存储器子系统及其存储器控制器
CN103176752A (zh) * 2012-07-02 2013-06-26 晶天电子（深圳）有限公司 带有耐用转换层及临时文件转移功能从而实现闪速存储器磨损降低的超耐用固态驱动器
CN105934748A (zh) * 2013-10-18 2016-09-07 桑迪士克科技有限责任公司 用于储存系统中的损耗均衡的偏置

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6230233B1 (en) 1991-09-13 2001-05-08 Sandisk Corporation Wear leveling techniques for flash EEPROM systems
US20060282610A1 (en) * 2005-06-08 2006-12-14 M-Systems Flash Disk Pioneers Ltd. Flash memory with programmable endurance
CN100533409C (zh) * 2005-07-29 2009-08-26 松下电器产业株式会社 存储器控制器，非易失性存储设备，非易失性存储系统，和非易失性存储器地址管理方法
US20070174549A1 (en) * 2006-01-24 2007-07-26 Yevgen Gyl Method for utilizing a memory interface to control partitioning of a memory module
US7710777B1 (en) * 2006-12-20 2010-05-04 Marvell International Ltd. Semi-volatile NAND flash memory
US7804718B2 (en) 2007-03-07 2010-09-28 Mosaid Technologies Incorporated Partial block erase architecture for flash memory
WO2009100149A1 (en) * 2008-02-10 2009-08-13 Rambus, Inc. Segmentation of flash memory for partial volatile storage
JP4522464B2 (ja) * 2008-04-22 2010-08-11 シャープ株式会社 帯電装置および画像形成装置
JP4439569B2 (ja) * 2008-04-24 2010-03-24 株式会社東芝 メモリシステム
US9123422B2 (en) 2012-07-02 2015-09-01 Super Talent Technology, Corp. Endurance and retention flash controller with programmable binary-levels-per-cell bits identifying pages or blocks as having triple, multi, or single-level flash-memory cells
US8135907B2 (en) * 2008-06-30 2012-03-13 Oracle America, Inc. Method and system for managing wear-level aware file systems
FR2933803B1 (fr) * 2008-07-08 2010-09-24 Thales Sa Dispositif et procede de sauvegarde de donnees sur des supports de memoire non volatile, de type flash nand, destines a des calculateurs embarques
US8995197B1 (en) 2009-08-26 2015-03-31 Densbits Technologies Ltd. System and methods for dynamic erase and program control for flash memory device memories
US9104547B2 (en) * 2011-08-03 2015-08-11 Micron Technology, Inc. Wear leveling for a memory device
US8832506B2 (en) 2012-01-20 2014-09-09 International Business Machines Corporation Bit error rate based wear leveling for solid state drive memory
JP5788369B2 (ja) * 2012-09-12 2015-09-30 株式会社東芝 メモリシステム、コンピュータシステム、およびメモリ管理方法
US8902669B2 (en) 2012-11-08 2014-12-02 SanDisk Technologies, Inc. Flash memory with data retention bias
KR20150068747A (ko) * 2013-12-12 2015-06-22 삼성전자주식회사 비휘발성 메모리 시스템, 이를 포함하는 모바일 장치 및 비휘발성 메모리 시스템의 동작방법
JP2015204073A (ja) * 2014-04-16 2015-11-16 キヤノン株式会社 情報処理装置、情報処理端末、情報処理方法およびプログラム
JP6107802B2 (ja) * 2014-12-15 2017-04-05 コニカミノルタ株式会社 不揮発性メモリ制御装置、不揮発性メモリ制御方法及びプログラム
US20160179428A1 (en) 2014-12-22 2016-06-23 Sandisk Technologies Inc. Dynamic programming adjustments in memory for non-critical or low power mode tasks
US10255191B2 (en) * 2015-08-13 2019-04-09 Advanced Micro Devices, Inc. Logical memory address regions
CN109358804B (zh) * 2015-09-29 2022-03-29 华为技术有限公司 一种数据处理方法、装置及闪存设备
US10489064B2 (en) * 2016-10-03 2019-11-26 Cypress Semiconductor Corporation Systems, methods, and devices for user configurable wear leveling of non-volatile memory

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101794256A (zh) * 2009-02-04 2010-08-04 超捷公司 非易失性存储器子系统及其存储器控制器
CN103176752A (zh) * 2012-07-02 2013-06-26 晶天电子（深圳）有限公司 带有耐用转换层及临时文件转移功能从而实现闪速存储器磨损降低的超耐用固态驱动器
CN105934748A (zh) * 2013-10-18 2016-09-07 桑迪士克科技有限责任公司 用于储存系统中的损耗均衡的偏置

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JP2021061028A (ja) 2021-04-15
WO2018067230A1 (en) 2018-04-12
US10489064B2 (en) 2019-11-26
US20180095678A1 (en) 2018-04-05
CN109716281A (zh) 2019-05-03
CN109716281B (zh) 2022-06-17
CN115064199A (zh) 2022-09-16
US11256426B2 (en) 2022-02-22
JP2019533213A (ja) 2019-11-14
JP7209684B2 (ja) 2023-01-20
JP6816253B2 (ja) 2021-01-20
US20200192583A1 (en) 2020-06-18
DE112017005020T5 (de) 2019-08-01

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