JP2021061028A5 - - Google Patents
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- JP2021061028A5 JP2021061028A5 JP2020213887A JP2020213887A JP2021061028A5 JP 2021061028 A5 JP2021061028 A5 JP 2021061028A5 JP 2020213887 A JP2020213887 A JP 2020213887A JP 2020213887 A JP2020213887 A JP 2020213887A JP 2021061028 A5 JP2021061028 A5 JP 2021061028A5
- Authority
- JP
- Japan
- Prior art keywords
- memory
- wear leveling
- sectors
- partition
- sector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000005192 partition Methods 0.000 claims description 53
- 238000013507 mapping Methods 0.000 claims description 12
- 238000000034 method Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 208000010378 Pulmonary Embolism Diseases 0.000 description 1
- 241000324401 Superba Species 0.000 description 1
- 239000004784 Superba Substances 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000002372 labelling Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201662403340P | 2016-10-03 | 2016-10-03 | |
| US62/403,340 | 2016-10-03 | ||
| US15/388,892 US10489064B2 (en) | 2016-10-03 | 2016-12-22 | Systems, methods, and devices for user configurable wear leveling of non-volatile memory |
| US15/388,892 | 2016-12-22 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019503550A Division JP6816253B2 (ja) | 2016-10-03 | 2017-08-09 | 不揮発性メモリのユーザ設定可能なウェアレベリング用のシステム、方法、及びデバイス |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2021061028A JP2021061028A (ja) | 2021-04-15 |
| JP2021061028A5 true JP2021061028A5 (https=) | 2021-05-27 |
| JP7209684B2 JP7209684B2 (ja) | 2023-01-20 |
Family
ID=61758166
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019503550A Active JP6816253B2 (ja) | 2016-10-03 | 2017-08-09 | 不揮発性メモリのユーザ設定可能なウェアレベリング用のシステム、方法、及びデバイス |
| JP2020213887A Active JP7209684B2 (ja) | 2016-10-03 | 2020-12-23 | 不揮発性メモリのユーザ設定可能なウェアレベリング用のシステム、方法、及びデバイス |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019503550A Active JP6816253B2 (ja) | 2016-10-03 | 2017-08-09 | 不揮発性メモリのユーザ設定可能なウェアレベリング用のシステム、方法、及びデバイス |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US10489064B2 (https=) |
| JP (2) | JP6816253B2 (https=) |
| CN (2) | CN115064199B (https=) |
| DE (1) | DE112017005020T5 (https=) |
| WO (1) | WO2018067230A1 (https=) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10489064B2 (en) * | 2016-10-03 | 2019-11-26 | Cypress Semiconductor Corporation | Systems, methods, and devices for user configurable wear leveling of non-volatile memory |
| US10832753B2 (en) * | 2017-07-31 | 2020-11-10 | General Electric Company | Components including structures having decoupled load paths |
| US10198195B1 (en) * | 2017-08-04 | 2019-02-05 | Micron Technology, Inc. | Wear leveling |
| US10409716B2 (en) | 2017-10-11 | 2019-09-10 | Western Digital Technologies, Inc. | Non-volatile memory with adaptive wear leveling |
| US11056206B2 (en) * | 2017-10-11 | 2021-07-06 | Western Digital Technologies, Inc. | Non-volatile memory with dynamic wear leveling group configuration |
| US10656844B2 (en) | 2017-10-11 | 2020-05-19 | Western Digital Technologies, Inc. | Non-volatile memory with regional and inter-region wear leveling |
| US10620867B2 (en) * | 2018-06-04 | 2020-04-14 | Dell Products, L.P. | System and method for performing wear leveling at a non-volatile firmware memory |
| CN110187999B (zh) * | 2019-05-09 | 2021-04-27 | 新华三技术有限公司 | 地址映射数据备份方法及装置 |
| US11436153B2 (en) * | 2020-05-26 | 2022-09-06 | Western Digital Technologies, Inc. | Moving change log tables to align to zones |
| US11314446B2 (en) * | 2020-06-25 | 2022-04-26 | Micron Technology, Inc. | Accelerated read translation path in memory sub-system |
| JP2022074450A (ja) * | 2020-11-04 | 2022-05-18 | キオクシア株式会社 | メモリカード、メモリシステム、及びファイルの断片化解消方法 |
| CN113127377B (zh) * | 2021-04-08 | 2022-11-25 | 武汉导航与位置服务工业技术研究院有限责任公司 | 一种非易失存储器件写擦除的磨损均衡方法 |
| DE102021120381A1 (de) | 2021-08-05 | 2023-02-09 | Harman Becker Automotive Systems Gmbh | Vorrichtung und Verfahren zur Verwaltung eines Speichers |
| US20230073503A1 (en) * | 2021-09-07 | 2023-03-09 | Micron Technology, Inc. | Security file system for a memory system |
| JP2023153674A (ja) | 2022-04-05 | 2023-10-18 | キオクシア株式会社 | メモリシステム |
| US12009038B2 (en) * | 2022-04-20 | 2024-06-11 | Micron Technology, Inc. | Memory device wear leveling |
Family Cites Families (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6230233B1 (en) | 1991-09-13 | 2001-05-08 | Sandisk Corporation | Wear leveling techniques for flash EEPROM systems |
| US20060282610A1 (en) * | 2005-06-08 | 2006-12-14 | M-Systems Flash Disk Pioneers Ltd. | Flash memory with programmable endurance |
| CN100533409C (zh) * | 2005-07-29 | 2009-08-26 | 松下电器产业株式会社 | 存储器控制器,非易失性存储设备,非易失性存储系统,和非易失性存储器地址管理方法 |
| US20070174549A1 (en) * | 2006-01-24 | 2007-07-26 | Yevgen Gyl | Method for utilizing a memory interface to control partitioning of a memory module |
| US7710777B1 (en) * | 2006-12-20 | 2010-05-04 | Marvell International Ltd. | Semi-volatile NAND flash memory |
| US7804718B2 (en) | 2007-03-07 | 2010-09-28 | Mosaid Technologies Incorporated | Partial block erase architecture for flash memory |
| WO2009100149A1 (en) * | 2008-02-10 | 2009-08-13 | Rambus, Inc. | Segmentation of flash memory for partial volatile storage |
| JP4522464B2 (ja) * | 2008-04-22 | 2010-08-11 | シャープ株式会社 | 帯電装置および画像形成装置 |
| JP4439569B2 (ja) * | 2008-04-24 | 2010-03-24 | 株式会社東芝 | メモリシステム |
| US9123422B2 (en) | 2012-07-02 | 2015-09-01 | Super Talent Technology, Corp. | Endurance and retention flash controller with programmable binary-levels-per-cell bits identifying pages or blocks as having triple, multi, or single-level flash-memory cells |
| US8135907B2 (en) * | 2008-06-30 | 2012-03-13 | Oracle America, Inc. | Method and system for managing wear-level aware file systems |
| FR2933803B1 (fr) * | 2008-07-08 | 2010-09-24 | Thales Sa | Dispositif et procede de sauvegarde de donnees sur des supports de memoire non volatile, de type flash nand, destines a des calculateurs embarques |
| US20100199020A1 (en) * | 2009-02-04 | 2010-08-05 | Silicon Storage Technology, Inc. | Non-volatile memory subsystem and a memory controller therefor |
| US8995197B1 (en) | 2009-08-26 | 2015-03-31 | Densbits Technologies Ltd. | System and methods for dynamic erase and program control for flash memory device memories |
| US9104547B2 (en) * | 2011-08-03 | 2015-08-11 | Micron Technology, Inc. | Wear leveling for a memory device |
| US8832506B2 (en) | 2012-01-20 | 2014-09-09 | International Business Machines Corporation | Bit error rate based wear leveling for solid state drive memory |
| CN103176752A (zh) * | 2012-07-02 | 2013-06-26 | 晶天电子(深圳)有限公司 | 带有耐用转换层及临时文件转移功能从而实现闪速存储器磨损降低的超耐用固态驱动器 |
| JP5788369B2 (ja) * | 2012-09-12 | 2015-09-30 | 株式会社東芝 | メモリシステム、コンピュータシステム、およびメモリ管理方法 |
| US8902669B2 (en) | 2012-11-08 | 2014-12-02 | SanDisk Technologies, Inc. | Flash memory with data retention bias |
| US9298608B2 (en) * | 2013-10-18 | 2016-03-29 | Sandisk Enterprise Ip Llc | Biasing for wear leveling in storage systems |
| KR20150068747A (ko) * | 2013-12-12 | 2015-06-22 | 삼성전자주식회사 | 비휘발성 메모리 시스템, 이를 포함하는 모바일 장치 및 비휘발성 메모리 시스템의 동작방법 |
| JP2015204073A (ja) * | 2014-04-16 | 2015-11-16 | キヤノン株式会社 | 情報処理装置、情報処理端末、情報処理方法およびプログラム |
| JP6107802B2 (ja) * | 2014-12-15 | 2017-04-05 | コニカミノルタ株式会社 | 不揮発性メモリ制御装置、不揮発性メモリ制御方法及びプログラム |
| US20160179428A1 (en) | 2014-12-22 | 2016-06-23 | Sandisk Technologies Inc. | Dynamic programming adjustments in memory for non-critical or low power mode tasks |
| US10255191B2 (en) * | 2015-08-13 | 2019-04-09 | Advanced Micro Devices, Inc. | Logical memory address regions |
| CN109358804B (zh) * | 2015-09-29 | 2022-03-29 | 华为技术有限公司 | 一种数据处理方法、装置及闪存设备 |
| US10489064B2 (en) * | 2016-10-03 | 2019-11-26 | Cypress Semiconductor Corporation | Systems, methods, and devices for user configurable wear leveling of non-volatile memory |
-
2016
- 2016-12-22 US US15/388,892 patent/US10489064B2/en active Active
-
2017
- 2017-08-09 JP JP2019503550A patent/JP6816253B2/ja active Active
- 2017-08-09 CN CN202210572068.1A patent/CN115064199B/zh active Active
- 2017-08-09 WO PCT/US2017/046142 patent/WO2018067230A1/en not_active Ceased
- 2017-08-09 CN CN201780056864.7A patent/CN109716281B/zh active Active
- 2017-08-09 DE DE112017005020.0T patent/DE112017005020T5/de active Pending
-
2019
- 2019-10-16 US US16/655,091 patent/US11256426B2/en active Active
-
2020
- 2020-12-23 JP JP2020213887A patent/JP7209684B2/ja active Active
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