CN115058621A - 一种双相高耐蚀铜箔及其制备方法 - Google Patents
一种双相高耐蚀铜箔及其制备方法 Download PDFInfo
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 95
- 239000011889 copper foil Substances 0.000 title claims abstract description 60
- 238000002360 preparation method Methods 0.000 title claims abstract description 21
- 239000010949 copper Substances 0.000 claims abstract description 40
- 238000003723 Smelting Methods 0.000 claims abstract description 34
- 229910052802 copper Inorganic materials 0.000 claims abstract description 34
- 238000004544 sputter deposition Methods 0.000 claims abstract description 24
- 239000002245 particle Substances 0.000 claims abstract description 23
- 229910052796 boron Inorganic materials 0.000 claims abstract description 20
- 238000005260 corrosion Methods 0.000 claims abstract description 19
- 239000000956 alloy Substances 0.000 claims abstract description 17
- 230000007797 corrosion Effects 0.000 claims abstract description 17
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 14
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 13
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052684 Cerium Inorganic materials 0.000 claims abstract description 12
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 12
- 239000010439 graphite Substances 0.000 claims abstract description 12
- 239000000463 material Substances 0.000 claims abstract description 12
- 239000002994 raw material Substances 0.000 claims abstract description 12
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000010936 titanium Substances 0.000 claims abstract description 11
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 11
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 10
- 239000012300 argon atmosphere Substances 0.000 claims abstract description 6
- 230000003647 oxidation Effects 0.000 claims abstract description 6
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 6
- 238000005303 weighing Methods 0.000 claims abstract description 6
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000011573 trace mineral Substances 0.000 claims abstract description 5
- 235000013619 trace mineral Nutrition 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 22
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 12
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 10
- 230000008018 melting Effects 0.000 claims description 7
- 238000002844 melting Methods 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 6
- 229910052786 argon Inorganic materials 0.000 claims description 5
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 5
- 150000002910 rare earth metals Chemical class 0.000 claims description 5
- 238000007670 refining Methods 0.000 abstract description 3
- 230000007613 environmental effect Effects 0.000 abstract description 2
- 239000011159 matrix material Substances 0.000 abstract description 2
- 239000007769 metal material Substances 0.000 abstract description 2
- 239000013078 crystal Substances 0.000 abstract 2
- 239000013077 target material Substances 0.000 description 7
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 4
- 239000011888 foil Substances 0.000 description 4
- 229910052744 lithium Inorganic materials 0.000 description 4
- 239000002131 composite material Substances 0.000 description 3
- 238000009749 continuous casting Methods 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 238000005096 rolling process Methods 0.000 description 3
- 238000004381 surface treatment Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 229910000570 Cupronickel Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000013543 active substance Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- FZQBLSFKFKIKJI-UHFFFAOYSA-N boron copper Chemical compound [B].[Cu] FZQBLSFKFKIKJI-UHFFFAOYSA-N 0.000 description 1
- SKEYZPJKRDZMJG-UHFFFAOYSA-N cerium copper Chemical compound [Cu].[Ce] SKEYZPJKRDZMJG-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- WCCJDBZJUYKDBF-UHFFFAOYSA-N copper silicon Chemical compound [Si].[Cu] WCCJDBZJUYKDBF-UHFFFAOYSA-N 0.000 description 1
- IUYOGGFTLHZHEG-UHFFFAOYSA-N copper titanium Chemical compound [Ti].[Cu] IUYOGGFTLHZHEG-UHFFFAOYSA-N 0.000 description 1
- 239000007822 coupling agent Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 239000012046 mixed solvent Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000003075 superhydrophobic effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/02—Making non-ferrous alloys by melting
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0005—Separation of the coating from the substrate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
- C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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Abstract
本发明涉及一种双相高耐蚀铜箔及其制备方法，属于金属材料领域，该铜箔组分是在纯铜的基础上添加微量元素铈和硼，制备步骤包括按质量百分比称取原料，采用石墨坩埚在真空熔炼炉中熔炼，将高纯Cu块、高纯B颗粒、高纯Ce颗粒放在真空熔炼炉中的石墨坩埚中，关闭炉门并抽真空，采用氩气气氛保护防止氧化，控制熔炼电流至合金块全部熔化，随后浇注于圆形铜模具中，加工成圆饼状，利用磁控溅射设备溅射到钛板上得到铜箔。本发明能得到厚度为1‑10μm的铜箔，基体为铜，该铜箔的晶界上分布着非晶态的硼颗粒，其耐蚀性得到大幅度提升，Ce对铜箔组织起到晶粒细化的作用。本发明双相铜箔材料是一种新型高耐蚀铜箔材料，其制备方法具有环保、制备简单等优点。
Description
技术领域
本发明涉及一种双相高耐蚀铜箔及其制备方法，属于金属材料技术领域。
背景技术
电解铜箔广泛应用于芯片封装、印刷电路和新能源等领域，是封装基板、印制线路板和 锂电池集流体等产品的关键基础材料。对于芯片封装铜箔，具备超低轮廓度和高剥离强度是 保障信号传输完整性和可靠性的基本要求；对于高性能锂电池铜箔，同时拥有高抗拉强度和 高延伸率是确保锂电池制备过程中活性物质与集流体之间紧密接触，并提高锂电池安全性的 基本条件。随着印制电路板、覆铜板行业对高性能铜箔越来越高的要求，现有铜箔的耐腐蚀 性已不能满足印刷电路板的要求，特别是12μm以下的铜箔在刻蚀高精细线路时会出现边部 腐蚀现象，严重时会出现板材掉线条问题。中国专利文件201811300168.9提出了一种提高电 解铜箔耐腐蚀性的表面处理方法，该处理方法包括生箔预处理、固化镀液、钝化处理、喷涂 偶联剂等步骤。中国专利文件201610692961.2提出了一种耐蚀抗雾低黏附铜基超疏水表面的 制备方法，以氨水的水和无水乙醇(体积比1:1)的混合溶剂溶液作为浸泡液，将铜箔进行浸泡 及氟化处理，制备了耐蚀抗雾低黏附铜箔材料。以上方法均是从表面处理角度提高铜箔的耐 蚀性，通过在镀液中加入添加剂，改善处理层的形貌结构和组织性能，整个表面处理工艺流 程长、工序步骤多，既增加了生产的成本，也制约了产品的品质。
本发明旨在通过在纯铜的基础上添加微量元素铈(Ce)和硼(B)制备一种双相高耐蚀铜 箔。中国专利文件201911370681.X提及了一种用于板式换热器的耐蚀铜合金材料及其制备方 法，该制备方法以铜、锌为主要原料通过向其中加入铝、硼、铈、锡、磷等微量元素，通过 上引连铸依次结合挤压、轧制、退火等工序获得了强度高、导热性能好且耐腐蚀性能突出的 铜合金材料。中国专利文件202011432939.7提及了一种无镍白色铜合金带箔材的制备方法， 该方法以纯锌、纯锰、纯铝、纯锡、铜-钛中间合金、铜-硅中间合金、铜-硼中间合金、铜- 铈中间合金及电解铜为原料，通过水平连铸结合轧制、退火等工艺获得了厚度为0.04-0.1mm 的无镍白色铜合金带箔材。以上方法是通过熔炼结合金属塑性加工法获得所需的性能的铜合 金材料，采用连铸加轧制工艺，将熔炼得到的铜合金轧制成一定厚度的原箔，此方法工艺复 杂，流程长，铸造速度慢，生产效率低，成本较高，且轧制得到原箔的极限厚度和宽度受到 限制，难以满足极薄铜箔厚度的要求。
发明内容
针对现有技术的不足，本发明提供一种高效环保、制备工艺简单的双相高耐蚀铜箔及其 制备方法。本发明采用真空熔炼结合物理气相沉积法制备了厚度为1-10μm的双相高耐蚀铜 箔，其中Ce对铜箔组织起到晶粒细化的作用，且非晶态硼存在于晶界使得耐蚀性得到大幅度 提升。
本发明的技术方案如下：
一种双相高耐蚀铜箔，其厚度为1-10μm，该铜箔组分是在纯铜的基础上添加微量元素铈 (Ce)和硼(B)，各主要元素的质量百分比为：B 0.2-1，Ce 0.01-0.03，其余为铜。
一种双相高耐蚀铜箔制备方法，包括以下步骤：
(1)按质量百分比称取原料，铜98.97-99.79％，纯硼0.2-1％，稀土Ce 0.01-0.03％；
(2)采用石墨坩埚在真空熔炼炉中熔炼，将纯度为99.99％的Cu块、纯度为99.9％的B 颗粒、纯度为99.9％的Ce颗粒放在真空熔炼炉中的石墨坩埚中，关闭炉门并抽真空至1×10-2Pa 以下，采用氩气气氛保护防止氧化，控制熔炼电流直至合金块全部熔化，在真空熔炼炉中将 铜合金熔体浇注于圆形铜模具中；
(3)将浇注的胚料加工成圆饼状；
(4)将圆饼状材料利用磁控溅射设备溅射到钛板上；
(5)将溅射得到的铜箔从钛板上取下。
优选的，步骤(1)中，三种原料以纯度为99.99％的铜块、纯度为99.9％的B颗粒和纯 度为99.9％的Ce颗粒的形式加入。
优选的，步骤(2)中，控制熔炼电流在500A以上直至合金块全部熔化，在450A熔炼电流下保温3分钟，随后在真空熔炼炉中将铜合金熔体浇注于圆形铜模具中。
优选的，步骤(4)中，根据现场磁控溅射效果，设置真空度为4×10-4Pa，工作气压0.6Pa， 氩气流量50sccm，溅射功率100W，溅射时间60-240min，加热温度100-170℃。
本发明的有益效果在于：
铜箔可采用电沉积或者磁控溅射的方法制得。在电解铜箔制备过程中，通过向电解液中 引入添加剂可以改变镀层的微观结构和形貌，有利于提升电解铜箔的某种性能。但是采用物 理气相沉积法制备极薄铜箔的过程中，磁控溅射靶材多采用纯铜靶材或者使用纯金属靶材进 行多个靶位多次溅射，难以将其他元素引入铜箔产品中对铜箔的性能进行改善。实践证明， 采用真空感应熔炼的方法制备溅射复合靶材，并将其作为镀膜材料用是可以应用于生产的。 本发明使用真空熔炼技术，在纯铜靶材的基础上引入少量的Ce、B元素，制备了铜合金的复 合靶材，使用复合靶材进行单靶一次溅射，使用磁控溅射方法，得到厚度为1-10μm的极薄铜 箔，利用本方法制备的铜箔晶界上有非晶态硼的存在，使其耐蚀性得到大幅度提升，且Ce 溅射在铜基体上，对铜箔组织起到晶粒细化作用。本发明双相铜箔材料是一种新型高耐蚀铜 箔材料，其制备方法具有环保、制备简单等优点。
具体实施方式
下面通过实施例对本发明做进一步说明，但不限于此。
实施例1：
一种双相高耐蚀铜箔，该铜箔组分是在纯铜的基础上添加微量元素铈(Ce)和硼(B)， 各主要元素的质量百分比为：B 0.2，Ce 0.01，其余为铜。
实施例2：
一种双相高耐蚀铜箔，该铜箔组分是在纯铜的基础上添加微量元素铈(Ce)和硼(B)， 各主要元素的质量百分比为：B为1，Ce为0.03，其余为铜。
实施例3：
一种制备实施例1所述双相高耐蚀铜箔的制备方法，包括以下步骤：
(1)按质量百分比称取原料，铜99.79％，纯硼0.2％，稀土Ce 0.01％，其中三种原料以 纯度为99.99％的高纯铜块、纯度为99.9％的B颗粒和纯度为99.9％的Ce颗粒的形式加入；
(2)采用石墨坩埚在真空熔炼炉中熔炼，将纯度为99.99％的Cu块、纯度为99.9％的B 颗粒、纯度为99.9％的Ce颗粒放在真空熔炼炉中的石墨坩埚中，关闭炉门并抽真空至9.9×10-3Pa，采用氩气气氛保护防止氧化，控制熔炼电流在500A直至合金块全部熔化，在450A 熔炼电流下保温3分钟，随后在真空熔炼炉中将铜合金熔体浇注于圆形铜模具中；
(3)将浇注的胚料加工成圆饼状；
(4)将圆饼状材料利用磁控溅射设备溅射到钛板上，真空度为4×10-4Pa，工作气压0.6Pa， 氩气流量50sccm，溅射功率100W，溅射时间60min，加热温度120℃。
(5)将溅射得到的铜箔从钛板上取下，即得到厚度为1μm的双相耐蚀铜箔。
实施例4：
一种制备实施例2所述双相高耐蚀铜箔的制备方法，包括以下步骤：
(1)按质量百分比称取原料，铜98.97％，纯硼1％，稀土Ce 0.03％，其中三种原料以纯 度为99.99％的高纯铜块、纯度为99.9％的B颗粒和纯度为99.9％的Ce颗粒的形式加入；
(2)采用石墨坩埚在真空熔炼炉中熔炼，将纯度为99.99％的Cu块、纯度为99.9％的B 颗粒、纯度为99.9％的Ce颗粒放在真空熔炼炉中的石墨坩埚中，关闭炉门并抽真空至9.9×10-3Pa，采用氩气气氛保护防止氧化，控制熔炼电流在500A直至合金块全部熔化，在450A 熔炼电流下保温3分钟，随后在真空熔炼炉中将铜合金熔体浇注于圆形铜模具中；
(3)将浇注的胚料加工成圆饼状；
(4)将圆饼状材料利用磁控溅射设备溅射到钛板上，真空度为4×10-4Pa，工作气压0.6Pa， 氩气流量50sccm，溅射功率100W，溅射时间240min，加热温度170℃；
(5)将溅射得到的铜箔从钛板上取下，即得到厚度为10μm的双相耐蚀铜箔。
实施例5：
一种双相高耐蚀铜箔的制备方法，包括以下步骤：
(1)按质量百分比称取原料，铜99.18％，纯硼0.8％，稀土Ce 0.02％，其中三种原料以 纯度为99.99％的高纯铜块、纯度为99.9％的B颗粒和纯度为99.9％的Ce颗粒的形式加入；
(2)采用石墨坩埚在真空熔炼炉中熔炼，将纯度为99.99％的Cu块、纯度为99.9％的B 颗粒、纯度为99.9％的Ce颗粒放在真空熔炼炉中的石墨坩埚中，关闭炉门并抽真空至9.9×10-3Pa，采用氩气气氛保护防止氧化，控制熔炼电流在500A直至合金块全部熔化，在450A 熔炼电流下保温3分钟，随后在真空熔炼炉中将铜合金熔体浇注于圆形铜模具中；
(3)将浇注的胚料加工成圆饼状；
(4)将圆饼状材料利用磁控溅射设备溅射到钛板上，真空度为4×10-4Pa，工作气压0.6Pa， 氩气流量50sccm，溅射功率100W，溅射时间180min，加热温度150℃；
(5)将溅射得到的铜箔从钛板上取下。
实施例6：
一种双相高耐蚀铜箔的制备方法，步骤如实施例5所述，所不同的是，步骤(4)中，加 热温度为100℃。
Claims (5)
1.一种双相高耐蚀铜箔，其特征在于，其厚度为1-10μm，该铜箔组分是在纯铜的基础上添加微量元素铈(Ce)和硼(B)，各元素的质量百分比为：B 0.2-1，Ce 0.01-0.03，其余为铜。
2.一种双相高耐蚀铜箔的制备方法，其特征在于，包括以下步骤：
(1)按质量百分比称取原料，铜98.97-99.79％，纯硼0.2-1％，稀土Ce 0.01-0.03％；
(2)采用石墨坩埚在真空熔炼炉中熔炼，将纯度为99.99％的Cu块、纯度为99.9％的B颗粒、纯度为99.9％的Ce颗粒放在真空熔炼炉中的石墨坩埚中，关闭炉门并抽真空至1×10- 2Pa以下，采用氩气气氛保护防止氧化，控制熔炼电流直至合金块全部熔化，在真空熔炼炉中将铜合金熔体浇注于圆形铜模具中；
(3)将浇注的胚料加工成圆饼状；
(4)将圆饼状材料利用磁控溅射设备溅射到钛板上；
(5)将溅射得到的铜箔从钛板上取下。
3.根据权利要求2所述的双相高耐蚀铜箔的制备方法，其特征在于，步骤(1)中，三种原料以纯度为99.99％的铜块、纯度为99.9％的B颗粒和纯度为99.9％的Ce颗粒的形式加入。
4.根据权利要求2所述的双相高耐蚀铜箔的制备方法，其特征在于，步骤(2)中，控制熔炼电流在500A以上直至合金块全部熔化，在450A熔炼电流下保温3分钟，随后在真空熔炼炉中将铜合金熔体浇注于圆形铜模具中。
5.根据权利要求2所述的双相高耐蚀铜箔的制备方法，其特征在于，步骤(4)中，设置真空度为4×10-4Pa，工作气压0.6Pa，氩气流量50sccm，溅射功率100W，溅射时间60-240min，加热温度100-170℃。
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