CN115048803B - Establishment method of temperature distribution map library and acquisition method of wafer surface temperature - Google Patents
Establishment method of temperature distribution map library and acquisition method of wafer surface temperature Download PDFInfo
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- 238000009826 distribution Methods 0.000 title claims abstract description 131
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Abstract
The embodiment of the application discloses a method for establishing a temperature distribution map library and a method for acquiring the surface temperature of a wafer, wherein the method for establishing the temperature distribution map library acquires the surface temperature distribution condition of the wafer through a temperature test, performs wafer simulation analysis to determine candidate simulation parameters which enable a simulation result to be matched with the temperature test result, changes the boundary condition of the temperature test, performs the temperature test again, brings the candidate simulation parameters into the changed boundary condition, performs the simulation analysis again to determine a group of matched simulation parameters which enable the simulation result to be matched with the temperature test result, obtains the surface temperature distribution condition of the wafer under different boundary conditions based on the matched simulation parameters, and establishes and acquires the temperature distribution map library. The temperature distribution chart base can be used for determining the temperature distribution condition of the surface of the wafer more accurately and quickly, multiple temperature tests are avoided, and the acquisition cost of the temperature of the surface of the wafer can be reduced.
Description
Technical Field
The invention relates to the field, in particular to a method for establishing a temperature distribution map library and a method for acquiring the surface temperature of a wafer.
Background
The demand for silicon carbide devices in the field of new energy automobiles is increasing day by day. A very large number of complex processes are required from the wafer of the silicon carbide substrate to the fabrication of the silicon carbide devices, wherein the cost of growing an epitaxial layer of silicon carbide on the silicon carbide substrate by Chemical Vapor Deposition (CVD) is the highest. During the growth process of the silicon carbide substrate, the influence of the inconsistency of the temperature distribution of the surface of the wafer on the process is larger and larger.
At present, no method can accurately acquire the surface temperature distribution condition of the wafer, and no clear algorithm and parameter are suitable for the simulation analysis of the fluid-solid-thermal coupling field of the silicon carbide epitaxial high-temperature reaction chamber.
Disclosure of Invention
In a first aspect, the present invention provides a method for creating a temperature distribution map library, including:
obtaining the surface temperature distribution condition of the wafer through a temperature test;
carrying out wafer simulation analysis according to the multiple sets of set simulation parameters to determine at least one set of candidate simulation parameters which enable the simulation result to be matched with the temperature test result;
changing the boundary condition of the temperature test, carrying out the temperature test again, substituting the at least one group of candidate simulation parameters into the changed boundary condition, and carrying out simulation analysis again to determine a group of fit simulation parameters which fit the simulation result with the temperature test result;
and obtaining the surface temperature distribution condition of the wafer under different boundary conditions based on the fitting simulation parameters so as to establish and obtain a temperature distribution map library.
In an alternative embodiment, the obtaining the surface temperature distribution of the wafer through the temperature test includes:
arranging a plurality of temperature measuring ceramic rings on the surface of the wafer;
determining the corresponding temperature according to the deformation of the temperature measuring ceramic ring;
and determining the surface temperature distribution condition of the wafer based on the temperatures and the positions of the corresponding temperature measurement ceramic rings.
In an optional embodiment, the performing wafer simulation analysis according to the set multiple sets of simulation parameters to determine at least one set of candidate simulation parameters that make the simulation result and the temperature test result fit includes:
carrying out simulation analysis on the fluid-solid-thermal coupling physical field based on the set multiple groups of simulation parameters to obtain multiple simulation results;
and when the difference value between the simulation result and the temperature test result is within a preset range, determining the simulation parameter corresponding to the simulation result as a candidate simulation parameter.
In an alternative embodiment, the bringing the at least one set of candidate simulation parameters into the changed boundary conditions for simulation analysis again includes:
carrying out simulation analysis again by substituting the at least one group of candidate simulation parameters into the changed boundary conditions to obtain at least one simulation result;
and comparing the temperature test result under the changed boundary condition with at least one corresponding simulation result.
In an optional embodiment, the obtaining of the surface temperature distribution of the wafer under different boundary conditions based on the fitting simulation parameter includes:
determining at least one corresponding surface temperature distribution cloud picture according to the fit simulation parameters and the surface temperature distribution conditions corresponding to different boundary conditions;
storing the different boundary conditions and the surface temperature distribution cloud pictures in a one-to-one correspondence manner;
and establishing a temperature distribution map library based on the at least one surface temperature distribution cloud map.
In an alternative embodiment, the simulation parameter includes at least one of a parameter of graphite and a thermal insulating material in the high temperature reaction chamber, a parameter of a reaction gas, pressure information inside the reaction chamber, and a parameter of a quartz material maintaining a difference in pressure between inside and outside.
In a second aspect, the present invention provides a method for obtaining a surface temperature of a wafer, including:
inputting a process formula of a target wafer;
determining a surface temperature distribution cloud map of the target wafer from the temperature distribution map library obtained by the method of any one of the foregoing embodiments according to the boundary condition corresponding to the process recipe.
In a third aspect, the present invention provides an apparatus for creating a temperature distribution map library, the apparatus comprising:
the surface temperature acquisition module is used for acquiring the surface temperature distribution condition of the wafer through a temperature test;
the candidate simulation parameter acquisition module is used for carrying out wafer simulation analysis according to the set multiple groups of simulation parameters so as to determine at least one group of candidate simulation parameters which enable the simulation result to be matched with the temperature test result;
the fit simulation parameter determining module is used for changing the boundary condition of the temperature test, carrying out the temperature test again, substituting the at least one group of candidate simulation parameters into the changed boundary condition, and carrying out simulation analysis again to determine a group of fit simulation parameters which enable the simulation result to fit with the temperature test result;
and the temperature distribution map library establishing module is used for obtaining the surface temperature distribution conditions of the wafer under different boundary conditions based on the fit simulation parameters so as to establish and obtain a temperature distribution map library.
In a fourth aspect, the present invention provides a terminal device, including a memory and a processor, where the memory stores a computer program, and the computer program executes, when running on the processor, the method for establishing the temperature distribution map library according to any one of the foregoing embodiments or the method for acquiring the wafer surface temperature according to the foregoing embodiments.
In a fifth aspect, the present invention provides a readable storage medium, which stores a computer program, and the computer program executes the method for creating a temperature distribution map library according to any one of the foregoing embodiments or the method for acquiring the wafer surface temperature according to the foregoing embodiments when the computer program runs on a processor.
The embodiment of the application has the following beneficial effects:
the embodiment of the application discloses a method for establishing a temperature distribution map library and a method for acquiring the surface temperature of a wafer, wherein the method for establishing the temperature distribution map library acquires the surface temperature distribution condition of the wafer through a temperature test, performs wafer simulation analysis according to a plurality of sets of set simulation parameters to determine at least one set of candidate simulation parameters which enable a simulation result to be matched with the temperature test result, changes the boundary condition of the temperature test, performs the temperature test again, brings the at least one set of candidate simulation parameters into the changed boundary condition, performs the simulation analysis again to determine a set of matched simulation parameters which enable the simulation result to be matched with the temperature test result, and obtains the surface temperature distribution condition of the wafer under different boundary conditions based on the matched simulation parameters to establish and obtain the temperature distribution map library. According to the temperature distribution chart library established by the temperature test and simulation analysis combined mode, the temperature distribution chart library can be used for determining the temperature distribution condition of the surface of the wafer more accurately and quickly, multiple temperature tests are avoided, and the acquisition cost of the surface temperature of the wafer can be reduced.
Drawings
In order to more clearly illustrate the technical solution of the present invention, the drawings required to be used in the embodiments will be briefly described below, and it should be understood that the following drawings only illustrate some embodiments of the present invention, and therefore should not be considered as limiting the scope of the present invention. Like components are numbered similarly in the various figures.
Fig. 1 is a schematic flowchart illustrating a method for creating a temperature distribution map library according to an embodiment of the present disclosure;
fig. 2 is a schematic flow chart illustrating a process of obtaining a temperature distribution condition of a wafer surface in a method for establishing a temperature distribution map library according to an embodiment of the present disclosure;
fig. 3 is a schematic diagram illustrating a temperature curve of a wafer surface along a flow direction in a method for creating a temperature distribution map library according to an embodiment of the present disclosure;
fig. 4 is a schematic flow chart illustrating a process of determining candidate simulation parameters in a method for building a temperature distribution map library according to an embodiment of the present application;
fig. 5 is a schematic flow chart illustrating determining fit simulation parameters in a method for establishing a temperature distribution map library according to an embodiment of the present application;
fig. 6 shows a schematic diagram of a temperature distribution map library obtained in a method for establishing a temperature distribution map library according to an embodiment of the present application;
fig. 7 is a schematic flow chart illustrating temperatures corresponding to a temperature distribution condition of a wafer surface in a method for establishing a temperature distribution map library according to an embodiment of the present disclosure;
fig. 8 is a schematic flowchart illustrating a method for obtaining a wafer surface temperature according to an embodiment of the present disclosure;
fig. 9 is a schematic structural diagram illustrating a device for creating a temperature distribution map library according to an embodiment of the present disclosure.
Description of the main element symbols:
10-a device for establishing a temperature distribution map library; 11-a surface temperature acquisition module; 12-candidate simulation parameter acquisition module; 13-fitting simulation parameter determination module; and 14, establishing a temperature distribution map library.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments.
The components of embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations. Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments of the present invention without making any creative effort, shall fall within the protection scope of the present invention.
Hereinafter, the terms "including", "having", and their derivatives, which may be used in various embodiments of the present invention, are only intended to indicate specific features, numbers, steps, operations, elements, components, or combinations of the foregoing, and should not be construed as first excluding the existence of, or adding to, one or more other features, numbers, steps, operations, elements, components, or combinations of the foregoing.
Furthermore, the terms "first," "second," "third," and the like are used solely to distinguish one from another and are not to be construed as indicating or implying relative importance.
Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which various embodiments of the present invention belong. Terms such as those defined in commonly used dictionaries should be interpreted as having a meaning that is the same as the meaning of context in the relevant art and will not be interpreted as having an idealized or overly formal meaning unless expressly so defined herein.
Example 1
Referring to fig. 1, an embodiment of the present application provides a method for establishing a temperature distribution map library, exemplarily, the method for establishing a temperature distribution map library includes steps S100 to S400:
step S100: and obtaining the surface temperature distribution condition of the wafer through a temperature test.
In this embodiment, the temperature distribution of the surface of the wafer can be obtained by designing a temperature test, and the temperature distribution of the surface of the wafer in different processes can be obtained by changing the process through the temperature test. As shown in fig. 2, the step S100 includes the following sub-steps:
substep S110: and arranging a plurality of temperature measuring ceramic rings on the surface of the wafer.
And laying a certain number of temperature measuring ceramic rings at different positions on the surface of the wafer. In other words, after the temperature measuring ceramic ring is placed in the high-temperature reaction chamber for a period of time, because the temperatures corresponding to different positions in the high-temperature reaction chamber are different and the positions where the temperature measuring ceramic ring is laid are different, the temperature measuring ceramic ring generates different deformation amounts due to the temperature difference, and the deformation amounts can be kept for a certain period of time at normal temperature.
Substep S120: and determining the corresponding temperature according to the deformation of the temperature measuring ceramic ring.
By comparing the deformation of each temperature measuring ceramic ring with the standard deformation card and referring to the corresponding temperature conversion table, the temperature of each temperature measuring ceramic ring corresponding to the high-temperature reaction chamber can be determined through the ring diameter of the temperature measuring ceramic ring.
Substep S130: and determining the surface temperature distribution condition of the wafer based on the temperatures and the positions of the corresponding temperature measurement ceramic rings.
The test result of the wafer at a certain process temperature can be determined through the temperature corresponding to each temperature measuring ceramic ring and the laying position corresponding to each temperature measuring ceramic ring, namely the surface temperature distribution condition of the wafer under the boundary condition corresponding to the process is determined. The temperature profile of the surface of the wafer in the flow direction under a certain process is shown in fig. 3, where the middle temperature of the wafer is higher than the edge temperature.
The heating condition of the surface of the wafer can be accurately measured by using the ceramic temperature measuring ring in the embodiment, the surface temperature distribution condition of the measured wafer can be more accurately obtained by paving the temperature measuring ceramic ring at different positions, and a basis can be provided for subsequent simulation split bodies.
Step S200: and carrying out wafer simulation analysis according to the multiple sets of set simulation parameters to determine at least one set of candidate simulation parameters which enable the simulation result to be matched with the temperature test result.
In this embodiment, after the temperature distribution of the wafer surface is obtained by using the temperature measuring ceramic ring, simulation analysis is performed under the same boundary conditions as the temperature test to obtain at least one set of candidate simulation parameters. When simulation analysis is carried out, a plurality of groups of simulation parameters are set to be determined by simulation analysis. The boundary conditions include information such as heating power of the graphite part, reaction gas flow, temperature of an infrared temperature measuring point, equipment heat exchange amount, and rotation speed of wafer rotation. As shown in fig. 4, step S200 includes the following sub-steps:
substep S210: and carrying out simulation analysis on the fluid-solid-thermal coupling physical field based on the set multiple groups of simulation parameters to obtain multiple simulation results.
It can be understood that when the simulation analysis of the fluid-solid-thermal coupling physical field is performed on the surface temperature distribution condition of the wafer in the high-temperature reaction chamber under the same boundary condition as the temperature test, various simulation analysis parameters have certain influence on the numerical solution result of the simulation analysis, and therefore, when the simulation analysis is performed, a large amount of numerical simulation work is required to be performed for determination. In other words, a plurality of simulation results are obtained by setting a plurality of sets of simulation parameters for simulation analysis, and the surface temperature distribution conditions of the wafer corresponding to different simulation parameters are obtained.
The multiple sets of simulation parameters are obtained by continuously debugging the simulation parameters and the simulation parameter combination. The simulation parameters include at least one of parameters, such as parameters of graphite and heat insulating materials in the high-temperature reaction chamber, such as density, thermal conductivity, heat capacity, emissivity and other physical information; parameters of the reaction gas, such as physical information of density, thermal conductivity, heat capacity, compressibility, and the like; the pressure information in the reaction chamber and the parameters of the quartz material for keeping the pressure difference between the inside and the outside, such as the physical information of density, heat conductivity coefficient, heat capacity, radiance, optical parameters and the like; the gas flows in the reaction chamber and the graphite part is inductively heated to generate heat; information such as initial flow rate and initial temperature of the reaction gas; thermal resistance and radiation information between the solid and the solid contact wall surface; and when the step of grid discretization before solving and setting is carried out, selecting the type of the grid, the size of the grid size and the like.
Substep S220: and when the difference value between the simulation result and the temperature test result is within a preset range, determining the simulation parameter corresponding to the simulation result as a candidate simulation parameter.
After obtaining a plurality of simulation results corresponding to a plurality of sets of simulation parameters, comparing the plurality of simulation results with the temperature test result obtained through the temperature test, and when the difference between the temperature test result and the simulation result is within a preset range, in other words, when the temperature test result is closer to the simulation result, considering that the simulation result is in fit with the temperature test result, so as to determine that the simulation parameters corresponding to the simulation result are candidate simulation parameters. If the difference value between at least one simulation result and the temperature test result is within the preset range, at least one group of simulation parameters can be determined to be candidate simulation parameters.
During simulation, variables capable of changing the temperature distribution of the wafer surface are taken as independent variables, such as parameters of gas and solid materials, contact states between wall surfaces, degree of grid discretization and the like, and the same gas inlet/outlet flow and other known parameters as those in the test are taken, so that the condition of the temperature distribution of the wafer surface can be obtained. When a plurality of independent variables exist simultaneously, a fixed solution is obtained, namely, when the temperature distribution of the surface of the wafer obtained by the test is obtained, different solutions can exist in each independent variable. At this time, at least one set of candidate simulation parameters is obtained, and the same result can be obtained under specific boundary conditions. The specific equation corresponds to the following:
y＝f(a、b、c、d、e......)
wherein a, b, c, d, e 1 ＝f(a、b、c、d、e......)。
There is at least one set of solutions to the equation, such as (a) 1 、b 1 、c 1 、d 1 、e 1 ......)、(a 2 、b 2 、c 2 、d 2 、e 2 ......)、......(a n 、b n 、c n 、d n 、e n ......)。
Namely, all the solutions are taken as candidate simulation parameters to be stored.
Step S300: changing the boundary condition of the temperature test, carrying out the temperature test again, substituting at least one group of candidate simulation parameters into the changed boundary condition, carrying out simulation analysis again, and determining a group of fit simulation parameters which enable the simulation result to be fit with the temperature test result.
In this embodiment, different conditions correspond to different process recipes, that is, different boundary conditions, and the boundary conditions are changed, that is, the process recipe of the wafer is changed. The temperature test is performed again under the changed boundary conditions, and the temperature test result corresponding to the changed boundary conditions is obtained, in other words, under different working conditions, that is, when the gas introduction amount, the heating power and the like are different, the corresponding temperature test result is obtained through measurement. If the boundary conditions of the temperature test are changed for a plurality of times, a plurality of temperature test results will be obtained.
And substituting at least one group of candidate simulation parameters into the changed boundary conditions for simulation analysis again to obtain at least one simulation result. Comparing the temperature test result corresponding to the changed boundary condition with at least one corresponding simulation result, and if only the simulation result corresponding to a group of candidate simulation parameters is in fit with the temperature test result, determining the group of candidate simulation parameters as fit simulation parameters; if the simulation result corresponding to at least one group of simulation parameters is determined to be fit with the temperature test result under the boundary condition, the boundary condition is changed again, and the temperature test is carried out under the changed boundary condition until a group of candidate simulation parameters which enable the temperature test result to be fit with the corresponding simulation result are determined, wherein the candidate simulation parameters are fit simulation parameters. As shown in fig. 5, the step of performing simulation analysis again by bringing at least one set of candidate simulation parameters into the changed boundary conditions includes the following sub-steps:
substep S310: and substituting at least one group of candidate simulation parameters into the changed boundary conditions for simulation analysis again to obtain at least one simulation result.
And substituting the obtained at least one group of candidate simulation parameters into the changed boundary conditions for simulation analysis again to obtain at least one corresponding simulation result. If the boundary conditions are changed for multiple times, at least one group of candidate simulation parameters is respectively brought into multiple changed different boundary conditions for simulation analysis, and at least one simulation result corresponding to each changed boundary condition is obtained.
Exemplarily, the wafer surface temperature distribution y obtained by the temperature test after changing the boundary condition 2 ＝f(a、b、c、d、e......)。
The changed boundary condition and at least one set of candidate simulation parameters obtained above, such as (a) 1 、b 1 、c 1 、d 1 、e 1 ......)、(a 2 、b 2 、c 2 、d 2 、e 2 ......)、......(a n 、b n 、c n 、d n 、e n Substituting the parameters into an equation, wherein each group of candidate simulation parameters corresponds to a result, namely the temperature distribution of the surface of the wafer obtained through simulation is as follows:
Y 1 ＝f(a 1 、b 1 、c 1 、d 1 、e 1 ......)
Y 2 ＝f(a 2 、b 2 、c 2 、d 2 、e 2 ......)
......
Y n ＝f(a n 、b n 、c n 、d n 、e n ......)。
substep S320: and comparing the temperature test result under the changed boundary condition with at least one corresponding simulation result.
And comparing the temperature test result obtained under the changed boundary condition with at least one corresponding simulation result, and when the temperature test result is matched with the at least one simulation result under the changed boundary condition, in other words, when the difference value between the at least one simulation result under the boundary condition and the corresponding temperature test result is within a preset range, changing the boundary condition again and carrying out the temperature test under the corresponding temperature condition until only one simulation result under the same boundary condition is matched with the temperature test result, and determining candidate simulation parameters corresponding to the simulation result as matched simulation parameters. The fit simulation parameter is considered to be applicable to all the working conditions, that is, the fit simulation parameter is applicable to all the boundary conditions.
The embodiment can finally determine simulation analysis parameters of the fluid-solid-thermal coupling physical field integrating radiation, convection and heat conduction as heat exchange modes and a gas flow mode mainly comprising turbulent flow. After the fitting simulation parameters are determined, the fitting simulation parameters are solidified, for example, physical parameters of graphite parts, heat insulating materials, quartz and gas in the reaction chamber are determined, the pressure in the reaction chamber is determined, the flowing state of the gas is determined, the type and size of the mesh are determined, and thermal resistance and radiation information between wall surfaces are determined. The embodiment can optimize the internal structure of the wafer reaction chamber through simulation analysis, and reduce the frequency of temperature tests, so that the cost is low and the period is short.
Step S400: and obtaining the surface temperature distribution condition of the wafer under different boundary conditions based on the fit simulation parameters so as to establish a temperature distribution map library.
After fit simulation parameters with universality and accuracy are determined, the surface temperature distribution conditions of the wafers under different boundary conditions can be determined through the fit simulation parameters, and a large number of results of the surface temperature distribution conditions of the wafers are summarized, so that a temperature distribution map library of a fixed process is established for rapidly calling out temperature cloud maps corresponding to the surface temperature distribution conditions of the wafers when different process formulas are called out. As shown in fig. 6, step S400 includes the following sub-steps:
substep S410: and determining at least one corresponding surface temperature distribution cloud picture by fitting the simulation parameters and the surface temperature distribution conditions corresponding to different boundary conditions.
And inputting the finally determined fitting simulation parameters into numerical simulation software, and obtaining surface temperature distribution cloud pictures of the wafer under different boundary conditions in the numerical simulation software after changing the boundary conditions. In other words, the surface temperature distribution cloud map of the wafer is determined by calculation, which is the condition of the surface temperature distribution of the wafer under boundary conditions such as different gas flow rates, heating powers, temperature measuring point temperatures, and outside cooling water flow rates. Wherein, a surface temperature distribution cloud chart of the wafer under the boundary condition corresponding to a certain process recipe is shown in fig. 7, and different positions of the wafer surface have a certain temperature difference, namely, the center temperature is higher than the edge temperature.
Substep S420: and storing different boundary conditions and surface temperature distribution cloud pictures in a one-to-one correspondence manner.
And (3) corresponding the boundary condition of each input numerical simulation software to the corresponding surface temperature distribution cloud pictures one by one, and storing the corresponding surface temperature distribution cloud pictures into a memory.
Substep S430: and establishing a temperature distribution map library based on at least one surface temperature distribution cloud map.
And summarizing the results of the boundary conditions and the corresponding surface temperature distribution cloud pictures to be obtained through at least one stored boundary condition and the corresponding surface temperature distribution cloud picture, and establishing a temperature distribution picture library for obtaining the fixed process.
This application not only can shorten the determination time of wafer surface temperature distribution condition through the temperature distribution gallery, avoids carrying out the temperature test many times to can be more accurate, quick determination wafer surface temperature distribution condition, can also reduce the acquisition cost of wafer surface temperature.
Example 2
As shown in fig. 8, the present application further provides a method for obtaining a wafer surface temperature, which includes the following steps:
step S10: inputting a process recipe of the target wafer.
Step S20: and determining the surface temperature distribution cloud picture of the target wafer from the temperature distribution picture library obtained by adopting the method according to the boundary condition corresponding to the process recipe.
It can be understood that, during process verification, after a process recipe corresponding to a target wafer is input, that is, a boundary condition corresponding to the process recipe is input, a wafer surface temperature distribution cloud map corresponding to the boundary condition in the memory is obtained for guiding process development and analysis. Wherein, the memory stores the temperature distribution map library obtained by the method.
In this embodiment, the temperature distribution map library obtained by the method can quickly determine the surface temperature distribution cloud map corresponding to the process recipe of the input target wafer, and can quickly analyze the influence of other factors on the process result without considering the influence of the wafer surface temperature on the process, so that the verification period of the process recipe is shorter and the verification cost is lower.
Based on the method for establishing the temperature distribution map library in the foregoing embodiment, fig. 9 shows a schematic structural diagram of the device 10 for establishing the temperature distribution map library provided in the embodiment of the present application. The device 10 for creating a temperature distribution map library includes:
and the surface temperature acquisition module 11 is used for acquiring the surface temperature distribution condition of the wafer through a temperature test.
The candidate simulation parameter obtaining module 12 is configured to perform wafer simulation analysis according to the multiple sets of set simulation parameters to determine at least one set of candidate simulation parameters that enable the simulation result to be matched with the temperature test result.
And the fit simulation parameter determining module 13 is used for changing the boundary condition of the temperature test, performing the temperature test again, substituting at least one group of candidate simulation parameters into the changed boundary condition, and performing simulation analysis again to determine a group of fit simulation parameters which enable the simulation result to be fit with the temperature test result.
And the temperature distribution map library establishing module 14 is configured to obtain the surface temperature distribution conditions of the wafer under different boundary conditions based on the fitting simulation parameters, so as to establish a temperature distribution map library.
In addition, the present application further provides a computer device, which includes a memory and a processor, where the memory stores a computer program, and the computer program executes the method for establishing the temperature distribution map library or the method for acquiring the wafer surface temperature in the foregoing embodiment when running on the processor.
The present embodiment also provides a readable storage medium, which stores a computer program, and the computer program executes the method for establishing the temperature distribution map library or the method for acquiring the wafer surface temperature of the foregoing embodiments when running on a processor.
In the embodiments provided in the present application, it should be understood that the disclosed apparatus and method can be implemented in other ways. The apparatus embodiments described above are merely illustrative and, for example, the flowchart and block diagrams in the figures illustrate the architecture, functionality, and operation of possible implementations of apparatus, methods and computer program products according to various embodiments of the present invention. In this regard, each block in the flowchart or block diagrams may represent a module, segment, or portion of code, which comprises one or more executable instructions for implementing the specified logical function(s). It should also be noted that, in alternative implementations, the functions noted in the block may occur out of the order noted in the figures. For example, two blocks shown in succession may, in fact, be executed substantially concurrently, or the blocks may sometimes be executed in the reverse order, depending upon the functionality involved. It will also be noted that each block of the block diagrams and/or flowchart illustration, and combinations of blocks in the block diagrams and/or flowchart illustration, can be implemented by special purpose hardware-based systems which perform the specified functions or acts, or combinations of special purpose hardware and computer instructions.
In addition, each functional module or unit in each embodiment of the present invention may be integrated together to form an independent part, or each module may exist separately, or two or more modules may be integrated to form an independent part.
The functions, if implemented in the form of software functional modules and sold or used as a stand-alone product, may be stored in a computer readable storage medium. Based on such understanding, the technical solution of the present invention or a part of the technical solution that contributes to the prior art in essence can be embodied in the form of a software product, which is stored in a storage medium and includes instructions for causing a computer device (which may be a smart phone, a personal computer, a server, or a network device, etc.) to execute all or part of the steps of the method according to the embodiments of the present invention. And the aforementioned storage medium includes: a U-disk, a removable hard disk, a Read-Only Memory (ROM), a Random Access Memory (RAM), a magnetic disk, or an optical disk, and various media capable of storing program codes.
The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present invention, and the changes or substitutions should be covered within the scope of the present invention.
Claims (9)
1. A method for establishing a temperature distribution map library, comprising:
arranging a plurality of temperature measuring ceramic rings on the surface of the wafer; determining the corresponding temperature according to the deformation of the temperature measuring ceramic ring; determining the surface temperature distribution condition of the wafer based on the temperatures and the positions of the corresponding temperature measuring ceramic rings;
carrying out wafer simulation analysis according to the set multiple groups of simulation parameters to determine at least one group of candidate simulation parameters which enable the simulation result to be fit with the temperature test result;
changing the boundary condition of the temperature test, carrying out the temperature test again, substituting the at least one group of candidate simulation parameters into the changed boundary condition, and carrying out simulation analysis again to determine a group of fit simulation parameters which enable the simulation result to fit with the temperature test result;
and obtaining the surface temperature distribution condition of the wafer under different boundary conditions based on the fit simulation parameters so as to establish a temperature distribution map library.
2. The method for creating a temperature distribution map library according to claim 1, wherein the performing wafer simulation analysis according to the set plurality of sets of simulation parameters to determine at least one set of candidate simulation parameters that fit the simulation result with the temperature test result comprises:
carrying out simulation analysis on the fluid-solid-thermal coupling physical field based on the set multiple groups of simulation parameters to obtain multiple simulation results;
and when the difference value between the simulation result and the temperature test result is within a preset range, determining the simulation parameter corresponding to the simulation result as a candidate simulation parameter.
3. The method for building a temperature distribution map library according to claim 1, wherein the step of performing simulation analysis again by substituting the at least one set of candidate simulation parameters into the changed boundary conditions comprises:
carrying out simulation analysis again by substituting the at least one group of candidate simulation parameters into the changed boundary conditions to obtain at least one simulation result;
and comparing the temperature test result under the changed boundary condition with at least one corresponding simulation result.
4. The method for establishing the temperature distribution map library according to claim 1, wherein the obtaining of the surface temperature distribution of the wafer under different boundary conditions based on the fitting simulation parameters comprises:
determining at least one corresponding surface temperature distribution cloud picture according to the fit simulation parameters and the surface temperature distribution conditions corresponding to different boundary conditions;
storing the different boundary conditions and the surface temperature distribution cloud pictures in a one-to-one correspondence manner;
and establishing a temperature distribution map library based on the at least one surface temperature distribution cloud map.
5. The method for creating a temperature distribution library according to claim 1, wherein the simulation parameter includes at least one of parameters of graphite and a heat insulating material in the high temperature reaction chamber, parameters of a reaction gas, information on an internal pressure of the reaction chamber, and parameters of a quartz material for maintaining a pressure difference between the inside and the outside.
6. A method for acquiring the surface temperature of a wafer is characterized by comprising the following steps:
inputting a process formula of a target wafer;
determining a surface temperature distribution cloud chart of the target wafer from the temperature distribution chart library obtained by the method of any one of claims 1 to 5 according to the boundary condition corresponding to the process recipe.
7. An apparatus for creating a temperature distribution map library, the apparatus comprising:
the surface temperature acquisition module is used for arranging a plurality of temperature measurement ceramic rings on the surface of the wafer; determining the corresponding temperature according to the deformation of the temperature measuring ceramic ring; determining the surface temperature distribution condition of the wafer based on the temperatures and the positions of the corresponding temperature measuring ceramic rings;
the candidate simulation parameter acquisition module is used for carrying out wafer simulation analysis according to the set multiple groups of simulation parameters so as to determine at least one group of candidate simulation parameters which enable the simulation result to be matched with the temperature test result;
the fit simulation parameter determining module is used for changing the boundary condition of the temperature test, carrying out the temperature test again, substituting the at least one group of candidate simulation parameters into the changed boundary condition, and carrying out simulation analysis again to determine a group of fit simulation parameters which enable the simulation result to fit with the temperature test result;
and the temperature distribution map library establishing module is used for obtaining the surface temperature distribution condition of the wafer under different boundary conditions based on the fit simulation parameters so as to establish and obtain a temperature distribution map library.
8. A terminal device comprising a memory and a processor, wherein the memory stores a computer program, and the computer program executes the method for creating a temperature distribution map library according to any one of claims 1 to 5 or the method for acquiring a wafer surface temperature according to claim 6 when the computer program runs on the processor.
9. A readable storage medium storing a computer program which, when executed on a processor, executes the method for creating a temperature distribution map library according to any one of claims 1 to 5 or the method for acquiring a wafer surface temperature according to claim 6.
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| CN202210758164.5A CN115048803B (en) | 2022-06-29 | 2022-06-29 | Establishment method of temperature distribution map library and acquisition method of wafer surface temperature |
| PCT/CN2022/136250 WO2024001047A1 (en) | 2022-06-29 | 2022-12-02 | Method for establishing temperature distribution map library and method for acquiring wafer surface temperature |
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| CN111695287A (en) * | 2020-04-22 | 2020-09-22 | 山东天岳先进材料科技有限公司 | Method and equipment for predicting overall temperature field in SiC single crystal furnace |
| CN112115628A (en) * | 2020-08-18 | 2020-12-22 | 河海大学 | Hot spot temperature detection method based on distribution calculation of temperature field of oil-immersed transformer |
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| JP2010219462A (en) * | 2009-03-19 | 2010-09-30 | Renesas Electronics Corp | Device, method and program for simulating wafer temperature |
| CN102411259A (en) * | 2011-11-28 | 2012-04-11 | 上海华力微电子有限公司 | Method and device for performing optical proximity correction on photomask design layout |
| CN113158589B (en) * | 2021-02-07 | 2022-09-16 | 中国第一汽车股份有限公司 | Simulation model calibration method and device of battery management system |
| CN114154433A (en) * | 2021-11-17 | 2022-03-08 | 北京航天试验技术研究所 | Fluid simulation method based on data comparison analysis |
| CN115048803B (en) * | 2022-06-29 | 2023-04-07 | 深圳市纳设智能装备有限公司 | Establishment method of temperature distribution map library and acquisition method of wafer surface temperature |
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| US11170145B1 (en) * | 2019-03-15 | 2021-11-09 | Ansys, Inc. | Method and system to generate thermophysical property for finite element based solvers |
| CN111695287A (en) * | 2020-04-22 | 2020-09-22 | 山东天岳先进材料科技有限公司 | Method and equipment for predicting overall temperature field in SiC single crystal furnace |
| CN112115628A (en) * | 2020-08-18 | 2020-12-22 | 河海大学 | Hot spot temperature detection method based on distribution calculation of temperature field of oil-immersed transformer |
| CN112507574A (en) * | 2020-10-14 | 2021-03-16 | 北京烁科中科信电子装备有限公司 | Method for evaluating and optimizing wafer surface temperature in ion implantation process based on numerical analysis |
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