CN112507574A - Method for evaluating and optimizing wafer surface temperature in ion implantation process based on numerical analysis - Google Patents
Method for evaluating and optimizing wafer surface temperature in ion implantation process based on numerical analysis Download PDFInfo
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- CN112507574A CN112507574A CN202011106155.5A CN202011106155A CN112507574A CN 112507574 A CN112507574 A CN 112507574A CN 202011106155 A CN202011106155 A CN 202011106155A CN 112507574 A CN112507574 A CN 112507574A
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Abstract
The invention provides a method for evaluating and optimizing the surface temperature of a wafer in an ion implantation process based on numerical analysis, which comprises the following steps: establishing a geometric model, dividing a grid into the model, and verifying the independence of the grid; secondly, calculating according to the current value collected by the Faraday cup, and fitting to obtain a mathematical model of the heat source distribution corresponding to the ion beam; performing equivalent conversion on the movement between the wafer and the ion beam, programming the cyclic reciprocating movement of a specified heat source, and simulating the actual ion implantation working condition; fourthly, programming and appointing the thermal physical property parameters of gas change at different positions for heat transfer numerical analysis based on the heat transfer mechanism of the rarefied gas between the wafer and the electrostatic chuck which is more critical to the heat dissipation of the wafer; fifthly, transient thermal simulation calculation is carried out by adopting finite element analysis software, and the change rule of the temperature field of the wafer along with time is obtained; sixthly, performing test testing on the surface temperature of the wafer under the same working condition, and correcting the constructed thermal simulation model by comparing test results, so that the accuracy of the simulation model is improved; and seventhly, performing single-factor optimization analysis based on the corrected thermal simulation model, and accordingly adjusting the process parameters to optimize the heat dissipation of the wafer, thereby improving the yield of products and realizing cost reduction and efficiency improvement.
Description
Technical Field
The invention discloses a method for evaluating and optimizing the surface temperature of a wafer in an ion implantation process based on numerical analysis, and belongs to the field of semiconductor processing.
Background
The ion implanter is one of core equipment for manufacturing integrated circuits, is mainly used for forming basic units of the integrated circuits such as PN junctions and the like, and is indispensable doping process equipment.
In recent years, with the emergence of demand for high-end general chips and the expansion of the scale, the power of the implanted ion beam is gradually increased, the problem of heat dissipation of the wafer is gradually highlighted, and the temperature becomes an important factor which restricts the yield and the yield of the chips. By adopting an improper model design scheme, the wafer temperature may be too high, so that the wafer is damaged, or unnecessary manpower and financial investment is caused, and the cost, the design difficulty and the project period are increased. Therefore, the accurate estimation of the surface temperature of the wafer under different ion implantation processes is very important. At present, the evaluation and optimization of the wafer temperature corresponding to the model design scheme of the mass production injection machine mainly depend on experimental tests, but the method has the disadvantages of high cost and long experimental period, and meanwhile, when the heat dissipation of the wafer is optimized, the process parameters which change in a large range can possibly cause the damage of experimental equipment, increase of trial and error cost and the like.
Disclosure of Invention
Aiming at the defects of the method, the method for evaluating and optimizing the surface temperature of the wafer in the ion implantation process based on the numerical analysis is provided, the thermal simulation model of the wafer in the ion implantation process is constructed, the temperature distribution rule of the surface of the wafer can be subjected to the numerical analysis, the accurate prediction and optimization of the temperature of the wafer in the high vacuum environment are realized, and the process is guided. The method comprises the following steps:
establishing a geometric model, dividing a grid into the model, and verifying the independence of the grid;
secondly, calculating according to the current value collected by the Faraday cup, and fitting to obtain a mathematical model of the heat source distribution corresponding to the ion beam;
performing equivalent conversion on the motion between the wafer and the ion beam, and programming the cyclic reciprocating motion of a specified heat source;
fourthly, programming and appointing the thermal physical property parameters of gas change at different positions for heat transfer numerical analysis based on the heat transfer mechanism of the rarefied gas between the wafer and the electrostatic chuck which is more critical to the heat dissipation of the wafer;
fifthly, transient thermal simulation calculation is carried out by adopting finite element analysis software, and the change rule of the temperature field of the wafer along with time is obtained;
sixthly, performing test testing on the surface temperature of the wafer under the same working condition, and correcting the constructed thermal simulation model by comparing test results;
and seventhly, changing relevant process parameters to calculate based on the corrected thermal simulation model, obtaining the influence of the parameters on the temperature change rule of the wafer, and adjusting the process parameters to optimize the heat dissipation of the wafer.
In the first step:
(1) the established model comprises a geometric model of the wafer and the electrostatic chuck, a cooling gas model between the wafer and the electrostatic chuck and a cooling water model in the electrostatic chuck;
(2) when meshing a fluid, boundary layer meshes are inserted at the surface of the fluid domain in contact with the solid domain.
And in the second step, calculating to obtain the heat flux density of the corresponding position by combining process parameters according to the current values of a plurality of positions in the ion beam in the actual injection process collected by the Faraday cup, and fitting by adopting a least square method to obtain a mathematical model of the heat source distribution corresponding to the ion beam.
In the third step:
(1) the equivalent conversion is that the wafer is set to be static, and the ion beam performs up-and-down scanning movement;
(2) and calculating to obtain a mathematical model of the movement of the central point of the heat source based on the process parameters such as the scanning speed, the over-scanning time and the like during the actual ion implantation, determining the circular reciprocating motion track of the heat source under different pass, and programming the process.
In the fourth step, according to literature research, the flowing rule of the rarefied gas between the wafer and the electrostatic chuck and a special heat transfer pattern are obtained, a mathematical model of the physical property parameters of the back gas in the whole wafer range about the pressure and the radius is determined based on the flowing rule and the special heat transfer pattern, and the thermal physical property of the specified gas changing at different positions is programmed and used for heat transfer numerical analysis.
And the fifth step is to establish a simulation model based on finite element software for heat transfer numerical analysis, and comprises the following steps:
(1) adding physical parameters of materials, and setting geometric attributes;
(2) calling the programs written in the third step and the fourth step, wherein the flow rate and the temperature are given to the inlet of the cooling water, and the pressure outlet is adopted as the outlet;
(3) and performing solving setting and post-processing to obtain the change rule of the surface temperature of the wafer in the whole ion implantation process.
And in the seventh step, based on the corrected thermal simulation model, a single variable control mode is adopted, relevant process parameters are changed for simulation calculation, corresponding wafer temperature change rules when different parameters are taken, relevant parameters in the ion implantation process are adjusted, the process is guided, and therefore heat dissipation of the wafer is optimized.
The invention can accurately evaluate and optimize the temperature of the surface of the wafer under high vacuum based on a numerical analysis model, and has the following beneficial effects:
(1) compared with a test method, the method has the advantages of greatly reducing the required cost, shortening the test period, being simple and feasible, simulating various working conditions according to the requirements, and avoiding the damage to wafers, equipment and the like.
(2) The actual heat source distribution is considered, the implantation process is really simulated, the cyclic reciprocating scanning motion of the ion beam equivalent to the ion implantation process is realized through programming, and the real distribution of the back gas thermophysical parameters at different positions which are more critical to the heat dissipation of the wafer is specified. An accurate thermal simulation model is established, the model is corrected by comparing experimental results, the corrected model can accurately predict the temperature distribution of the wafer, meanwhile, the heat dissipation of the wafer can be optimized based on the model, and the temperature of the wafer is controlled within the range of process requirements.
(3) The constructed numerical analysis model can accurately evaluate the temperature distribution of the wafer corresponding to different model schemes, avoids the damage of the wafer in the process or the unnecessary investment of a large amount of equipment and expenses, and has decisive guiding significance on the design of the whole machine. The method has the advantages of optimizing the heat dissipation of the wafer in a high vacuum environment, providing good theoretical support for the selection of a processing technology, providing practical and effective suggestions for the production of chips, contributing to the cost reduction and the efficiency improvement in the processing process of high-performance chips, and having important significance for promoting the development of electronic equipment such as an ion implanter and the like.
Drawings
FIG. 1 is a flow chart of evaluating and optimizing wafer surface temperature in an ion implantation process based on numerical analysis;
FIG. 2 is a heat source distribution diagram corresponding to an ion beam implanted on a wafer, wherein the heat flux density is Gaussian along the beam height direction;
fig. 3 is a diagram illustrating the scanning motion of the ion beam after an equivalent translation of the motion between the wafer and the ion beam.
Detailed description of the preferred embodiments
The invention is further illustrated with reference to the accompanying drawings and specific embodiments. It should be understood by those skilled in the art that the embodiments are only for the understanding of the present invention and should not be construed as the specific limitations of the present invention.
As shown in fig. 1, the present embodiment provides a method for evaluating and optimizing a wafer surface temperature in an ion implantation process based on numerical analysis, which includes the following specific steps:
the method comprises the steps of firstly, establishing a geometric model of a wafer and an electrostatic chuck required by simulation, wherein the diameter of the wafer is 200mm, and generating a cooling gas model between the wafer and the electrostatic chuck and a cooling water model in the electrostatic chuck. And dividing grids for each part, inserting boundary layer grids on the surface of a cooling water area in contact with the base, and selecting 5 groups of grid sizes for carrying out grid independence verification.
And secondly, calculating to obtain the heat flux density of a plurality of positions in the beam according to the current value of 64 multiplied by 24 points in the actually injected ion beam collected by the Faraday cup, the beam voltage, the area of the Faraday cup and the like, and obtaining a mathematical model of the heat source distribution corresponding to the ion beam by adopting least square fitting, wherein the heat flux density is in Gaussian distribution along the beam height direction as shown in figure 2.
Thirdly, in order to facilitate the simulation calculation, the movement between the wafer and the ion beam is equivalently converted, as shown in fig. 3, the wafer is set to be stationary, and the ion beam performs the up-and-down scanning movement. Calculating to obtain the motion track of the central point of the heat source based on the process parameters such as the scanning speed, the over-scanning time and the like during the actual Ion implantation, determining the mathematical model of the heat source movement corresponding to different pass, and programming to realize the implantation dosage of 1E16 Ion/cm2A cyclic reciprocating scanning motion of the ion beam.
And fourthly, acquiring a flowing rule of lean gas between the wafer and the electrostatic chuck and a special heat transfer form according to literature research, determining a mathematical model of physical parameters of back gas in a full wafer range about pressure, temperature and radius based on the flowing rule, and programming the thermal physical properties of the specified gas changed at different positions by combining the position of gas flow state transition for heat transfer numerical analysis.
And fifthly, establishing a simulation model based on finite element software to perform heat transfer numerical analysis, calling a program for specifying heat source movement and thermophysical property change written in the third step and the fourth step, adding thermophysical parameters such as thermal conductivity, specific heat and the like of the material, and setting geometric attributes. The inlet temperature of the cooling water is set to be 15 ℃, the inlet flow speed and turbulence parameters are set simultaneously, and the outlet adopts a pressure outlet; setting a convergence residual error, initializing, setting an initial temperature to be 25 ℃, and finally setting a time step and a total simulation time. And carrying out post-processing on the simulation result to obtain temperature distribution cloud pictures of the wafer surface at different moments and a time-dependent change curve of the highest temperature of the wafer surface in the whole ion implantation process.
And sixthly, performing test testing on the surface temperature of the wafer under the same working condition, uniformly selecting a plurality of points on the surface of the wafer, comparing and analyzing simulation calculation and test testing results, and adjusting related parameters to correct the thermal simulation model.
And seventhly, based on the corrected thermal simulation model, calculating by changing the pressure intensity of cooling gas, beam parameters and the like in a single variable control mode, acquiring the corresponding wafer temperature change rules when different parameters are taken, analyzing the influence of the process parameters on the heat dissipation of the wafer by combining simulation results, changing the related parameters of the ion implantation process, guiding the process, and optimizing the temperature of the surface of the wafer.
Claims (7)
1. A method for evaluating and optimizing wafer surface temperature in an ion implantation process based on numerical analysis, comprising the steps of: establishing a geometric model, dividing a grid into the model, and verifying the independence of the grid; secondly, calculating according to the current value collected by the Faraday cup, and fitting to obtain a mathematical model of the heat source distribution corresponding to the ion beam; performing equivalent conversion on the motion between the wafer and the ion beam, and programming the specified heat source to circularly reciprocate; fourthly, programming and appointing the thermal physical property parameters of gas change at different positions based on a heat transfer mechanism of rarefied gas between the wafer and the electrostatic chuck which is more critical to the heat dissipation of the wafer; fifthly, transient thermal simulation calculation is carried out by adopting finite element analysis software, and the change rule of the temperature field of the wafer along with time is obtained; sixthly, performing test testing on the surface temperature of the wafer under the same working condition, and correcting the constructed thermal simulation model by comparing test results; and seventhly, changing relevant process parameters to calculate based on the corrected thermal simulation model, obtaining the influence of the parameters on the wafer temperature change rule, and adjusting the process to optimize the wafer temperature.
2. The method for evaluating and optimizing a wafer surface temperature in an ion implantation process based on numerical analysis as set forth in claim 1, wherein in the first step:
(1) the established model comprises a geometric model of the wafer and the electrostatic chuck, a cooling gas model between the wafer and the electrostatic chuck and a cooling water model in the electrostatic chuck;
(2) when meshing a fluid, boundary layer meshes are inserted at the surface of the fluid domain in contact with the solid domain.
3. The method for evaluating and optimizing a wafer surface temperature in an ion implantation process based on numerical analysis as claimed in claim 1, wherein in the second step, a mathematical model of a heat source distribution corresponding to the ion beam is obtained by least square fitting by calculating a heat flux density at a corresponding position in combination with process parameters according to current values at a plurality of places in the ion beam in an actual implantation process collected by a faraday cup.
4. The method for evaluating and optimizing a wafer surface temperature in an ion implantation process based on numerical analysis as set forth in claim 1, wherein in the third step:
(1) the equivalent conversion is that the wafer is set to be static, and the ion beam performs up-and-down scanning movement;
(2) and calculating to obtain a mathematical model of the movement of the central point of the heat source based on the process parameters such as the scanning speed, the over-scanning time and the like during the actual ion implantation, determining the circular reciprocating motion track of the heat source under different pass, and programming the process.
5. The method of claim 1, wherein in the fourth step, the lean gas flow regime and the more specific heat transfer profile between the wafer and the electrostatic chuck are obtained from literature research, based on which mathematical models of pressure and radius are determined for the physical parameters of the backside gas over the entire wafer, and the thermal physical properties of the given gas at different locations are programmed to be used for the numerical analysis of heat transfer.
6. The method for evaluating and optimizing a wafer surface temperature in an ion implantation process based on numerical analysis as claimed in claim 1, wherein said fifth step is a heat transfer numerical analysis based on a finite element software created simulation model, comprising the steps of:
(1) adding physical parameters of materials, and setting geometric attributes;
(2) calling the programs written in the third step and the fourth step, wherein the flow rate and the temperature are given to the inlet of the cooling water, and the pressure outlet is adopted as the outlet;
(3) and performing solving setting and post-processing to obtain the change rule of the surface temperature of the wafer in the whole ion implantation process.
7. The method for evaluating and optimizing the surface temperature of a wafer in an ion implantation process based on numerical analysis according to claim 1, wherein in the seventh step, based on the corrected thermal simulation model, a single variable control mode is adopted to change relevant process parameters for simulation calculation, a wafer temperature change rule corresponding to values of different parameters is obtained, relevant parameters in the ion implantation process are adjusted, and the process is guided, thereby optimizing the heat dissipation of the wafer.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113591349A (en) * | 2021-07-23 | 2021-11-02 | 中科新松有限公司 | Temperature estimation method based on mechanical arm steady-state heat transfer model |
| CN113985122A (en) * | 2021-11-01 | 2022-01-28 | 苏州亿马半导体科技有限公司 | SiC power analysis method based on SolidWorks Flow Simulation |
| CN115048803A (en) * | 2022-06-29 | 2022-09-13 | 深圳市纳设智能装备有限公司 | Establishment method of temperature distribution map library and acquisition method of wafer surface temperature |
| CN115292986A (en) * | 2022-07-08 | 2022-11-04 | 中国市政工程华北设计研究总院有限公司 | Performance evaluation method of liquefied natural gas air-temperature gasifier |
| CN115480598A (en) * | 2022-08-15 | 2022-12-16 | 北京空间机电研究所 | Optical mirror surface temperature control method and measurement and control system in ion beam machining process |
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2020
- 2020-10-14 CN CN202011106155.5A patent/CN112507574A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113591349A (en) * | 2021-07-23 | 2021-11-02 | 中科新松有限公司 | Temperature estimation method based on mechanical arm steady-state heat transfer model |
| CN113985122A (en) * | 2021-11-01 | 2022-01-28 | 苏州亿马半导体科技有限公司 | SiC power analysis method based on SolidWorks Flow Simulation |
| CN115048803A (en) * | 2022-06-29 | 2022-09-13 | 深圳市纳设智能装备有限公司 | Establishment method of temperature distribution map library and acquisition method of wafer surface temperature |
| CN115048803B (en) * | 2022-06-29 | 2023-04-07 | 深圳市纳设智能装备有限公司 | Establishment method of temperature distribution map library and acquisition method of wafer surface temperature |
| WO2024001047A1 (en) * | 2022-06-29 | 2024-01-04 | 深圳市纳设智能装备股份有限公司 | Method for establishing temperature distribution map library and method for acquiring wafer surface temperature |
| CN115292986A (en) * | 2022-07-08 | 2022-11-04 | 中国市政工程华北设计研究总院有限公司 | Performance evaluation method of liquefied natural gas air-temperature gasifier |
| CN115292986B (en) * | 2022-07-08 | 2024-04-02 | 中国市政工程华北设计研究总院有限公司 | Performance evaluation method of liquefied natural gas air-temperature gasifier |
| CN115480598A (en) * | 2022-08-15 | 2022-12-16 | 北京空间机电研究所 | Optical mirror surface temperature control method and measurement and control system in ion beam machining process |
| CN115480598B (en) * | 2022-08-15 | 2023-09-29 | 北京空间机电研究所 | Optical mirror surface temperature control method and measurement and control system in ion beam processing process |
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