CN114864441B - Temperature compensation method for wafer heating disc - Google Patents
Temperature compensation method for wafer heating disc Download PDFInfo
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- CN114864441B CN114864441B CN202210443698.9A CN202210443698A CN114864441B CN 114864441 B CN114864441 B CN 114864441B CN 202210443698 A CN202210443698 A CN 202210443698A CN 114864441 B CN114864441 B CN 114864441B
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- 238000000034 method Methods 0.000 title claims abstract description 52
- 238000010438 heat treatment Methods 0.000 title claims abstract description 38
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 9
- 238000004088 simulation Methods 0.000 claims abstract description 5
- 238000013459 approach Methods 0.000 claims abstract description 4
- 238000004380 ashing Methods 0.000 claims description 7
- 238000009529 body temperature measurement Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000002474 experimental method Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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Abstract
The invention discloses a temperature compensation method of a wafer heating plate, which is characterized in that in the common plasma photoresist stripping process temperature, an RTD wafer sensor is used as a simulation wafer and is placed on the heating plate; setting the temperature of a heating plate to a certain fixed value X ℃, reading the nine-point temperature mean value of a wafer sensor to be used as the actual temperature N of the wafer under the heating plate at the temperature, adding a proper Y value on the set value X, and after the wafer is sufficiently and uniformly heated, enabling the actual temperature N of the wafer to approach X, wherein the error range is within +/-0.5 ℃, and the Y value is called the compensation value of the wafer under the set temperature X of the heating plate; and after the common process temperature of the temperature section is selected as a node for temperature compensation, software adopts a Lagrange piecewise linear interpolation mode to provide certain temperature compensation in the whole interval. The method realizes temperature compensation of the whole interval by a software control mode according to the temperature compensation data of some nodes in the temperature interval, and improves the precision and the stability of the process.
Description
Technical Field
The invention relates to a temperature compensation method, in particular to a temperature compensation method for a wafer heating disc.
Background
In the wafer manufacturing process, dry photoresist removal (plasma ashing) has many advantages of no pollution, high speed, complete photoresist removal, accurate control and the like compared with wet photoresist removal, and thus becomes an essential and important process in the whole production and manufacturing process. As the level of semiconductor manufacturing processes has increased, and feature sizes have further shrunk, the requirements for plasma process stability and precise control have become increasingly high. The temperature is one of the most important factors influencing the photoresist stripping rate and uniformity of the plasma, and the accurate control of the temperature of the wafer is an important guarantee of the process stability.
However, in the conventional plasma stripping apparatus, the heater is controlled to provide a temperature for heating the wafer, and the process temperature is measured and fed back by the thermocouple on the heating plate, so the temperature monitored by the thermocouple is strictly speaking the temperature of the heating plate rather than the actual temperature of the wafer. Because heating plate and wafer material are not uniform, often the wafer temperature can be less than the temperature of heating plate, and the experiment proves that the process temperature is higher, and the wafer is the bigger with the heating plate difference in temperature, and the wafer temperature can not reach the actual temperature of technology requirement more, and technology stability and accurate control can not effectively be ensured.
Aiming at the heating mode adopted by the existing plasma ashing equipment, the actual temperature of the wafer can not be avoided to have deviation with the process temperature (set temperature) of the heating plate thermocouple, experiments show that the deviation becomes larger along with the increase of the temperature of the heating plate, the relation is often not a simple linear relation (as shown in figure 1, under different set temperatures, the actual temperature of the wafer can reach the set temperature after certain temperature compensation is carried out on the heating plate), the temperature is a key factor of degumming rate and uniformity, and the temperature deviation influences the yield and the process stability of the product. Therefore, how to control the process temperature and ensure the accuracy of the process temperature is very important for improving the photoresist stripping rate and uniformity and ensuring the process stability. Therefore, developing a temperature compensation method for a wafer heating plate is a problem to be solved by those skilled in the art.
Disclosure of Invention
The invention provides a temperature compensation method for a wafer heating disc to solve the defects.
The above object of the present invention is achieved by the following technical means: a temperature compensation method for a wafer heating plate comprises the following steps:
s1: in the temperature of a common plasma photoresist stripping process from 40 ℃ to 280 ℃, an RTD wafer sensor is used as a simulation wafer and is placed on a heating plate;
s2: setting the temperature of the heating plate to a certain fixed value X ℃, reading the nine-point temperature average value of the wafer sensor as the actual temperature N of the wafer under the heating plate at the temperature, adding a proper Y value on the set X value, and after the wafer is heated fully and uniformly, enabling the actual temperature N of the wafer to approach X, wherein the error range is within +/-0.5 ℃, and the Y value is called the compensation value of the wafer under the set temperature X of the heating plate; if each temperature can be compensated, the temperature can be precisely controlled in the wafer production and manufacturing process, so that the stability of the process is ensured;
s3: the method is characterized in that the RTD wafer sensor is not needed to be used for measuring the value of each temperature of 40-280 ℃ in a common temperature section in the plasma ashing process, the common process temperature in the temperature section is selected as a node (basically uniformly distributed) for temperature compensation, and software adopts a Lagrange piecewise linear interpolation mode to provide certain temperature compensation in the whole section, so that the deviation between the actual temperature of the wafer and the process set temperature is ensured to be within the engineering requirement, and the process stability is ensured.
Further, the specific steps of using Lagrange piecewise linear interpolation mode are as follows:
in the common ashing process temperature range of 40-280 ℃, reasonable temperature nodes can be selected, such as: x is a radical of a fluorine atom 0≤ x 1≤ x 2≤ x 3≤ x 4≤ x 5≤ x 6≤ x 7 …x n And using the RTD wafer sensor to simulate temperature measurement to give a corresponding temperature compensation value to the node: y is 0 、y 1 、y 2 、y 3 、y 4 、y 5 、y 6 、y 7 …y n By Lagrange piecewise linear interpolation mode, the compensation temperature L of any temperature x between 40 ℃ and 280 ℃ can be obtained A (x) The expression is as follows:
wherein,
compared with the prior art, the invention has the advantages that: the temperature compensation of the whole interval can be realized through a software control mode according to the temperature compensation data of some nodes in the temperature interval, the deviation between the actual temperature of the wafer and the process set temperature is within an acceptable range, and the accuracy and the stability of the process are improved.
Drawings
Figure 1 is a graph of compensated temperatures for different heating plates at different set temperatures.
FIG. 2 is a schematic diagram of a simulation of actual wafer heating using an RTD wafer sensor.
Detailed Description
The invention is further described in detail below with reference to the accompanying drawings.
The invention discloses a temperature compensation method of a wafer heating disc, which comprises the following steps:
s1: in the temperature range of 40 ℃ to 280 ℃ of the common plasma photoresist stripping process, an RTD wafer sensor is used as a simulation wafer and is placed on a heating plate (as shown in figure 2, the RTD wafer sensor is used for simulating the heating condition of an actual wafer);
s2: setting the temperature of the heating plate to a certain fixed value X ℃, reading the nine-point temperature average value of the wafer sensor as the actual temperature N of the wafer under the heating plate at the temperature, adding a proper Y value on the set X value, and after the wafer is heated fully and uniformly, enabling the actual temperature N of the wafer to approach X, wherein the error range is within +/-0.5 ℃, and the Y value is called the compensation value of the wafer under the set temperature X of the heating plate; if each temperature can be compensated, the temperature can be precisely controlled in the wafer production and manufacturing process, so that the stability of the process is ensured;
s3: the method is characterized in that the RTD wafer sensor is not needed to be used for measuring the value of each temperature of 40-280 ℃ in a common temperature section in the plasma ashing process, the common process temperature in the temperature section is selected as a node (basically uniformly distributed) for temperature compensation, and software adopts a Lagrange piecewise linear interpolation mode to provide certain temperature compensation in the whole section, so that the deviation between the actual temperature of the wafer and the process set temperature is ensured to be within the engineering requirement, and the process stability is ensured.
Further, the specific steps of using Lagrange piecewise linear interpolation mode are as follows:
selecting reasonable temperature nodes in a common ashing process temperature range of 40-280 ℃, such as: x is the number of 0≤ x 1≤ x 2≤ x 3≤ x 4≤ x 5≤ x 6≤ x 7 …x n And using an RTD wafer sensor to simulate temperature measurement to give a corresponding temperature compensation value to the node: y is 0 、y 1 、y 2 、y 3 、y 4 、y 5 、y 6 、y 7 …y n By Lagrange piecewise linear interpolation mode, the compensation temperature L of any temperature x between 40 ℃ and 280 ℃ can be obtained A (x) .1. The The expression is as follows:
wherein,
in practical use, 8 temperature nodes can be selected, such as common process temperatures of 40, 70, 90, 120, 150, 200, 250, 280 ℃ and the like for compensation, and the temperature compensation of other points is given by software control by using the method.
The above description is only an embodiment of the present invention, and not intended to limit the scope of the present invention, and all modifications of equivalent structures and equivalent processes performed by the present specification and drawings, or directly or indirectly applied to other related technical fields, are included in the scope of the present invention.
Claims (1)
1. A temperature compensation method for a wafer heating plate is characterized by comprising the following steps: the method comprises the following steps:
s1: in the temperature of a common plasma photoresist stripping process from 40 ℃ to 280 ℃, an RTD wafer sensor is used as a simulation wafer and is placed on a heating plate;
s2: setting the temperature of a heating plate to a certain fixed value X ℃, reading the nine-point temperature mean value of a wafer sensor to be used as the actual temperature N of the wafer under the heating plate, adding a proper Y value on the set value X, and after the wafer is sufficiently and uniformly heated, enabling the actual temperature N of the wafer to approach X, wherein the error range is within +/-0.5 ℃, and the Y value is called the compensation value of the wafer under the set temperature X of the heating plate;
s3: after common process temperature of the temperature section is selected as a node for temperature compensation, software adopts a Lagrange piecewise linear interpolation mode to give certain temperature compensation of the whole section, so that the deviation of the actual temperature of the wafer and the set temperature of the process is ensured to be within engineering requirements, and the stability of the process is ensured; the Lagrange piecewise linear interpolation method comprises the following specific steps: selecting reasonable temperature nodes in a common ashing process temperature range of 40-280 ℃, such as: x is the number of 0 ≤x 1 ≤x 2 ≤x 3 ≤x 4 ≤x 5 ≤x 6 ≤x 7 …x n And using an RTD wafer sensor to simulate temperature measurement to give a corresponding temperature compensation value to the temperature node: y is 0 、y 1 、y 2 、y 3 、y 4 、y 5 、y 6 、y 7 …y n Then, the compensation temperature L of any temperature x between 40 ℃ and 280 ℃ can be obtained by a Lagrange piecewise linear interpolation mode h (x) The expression is as follows:
wherein,
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107907250A (en) * | 2017-11-23 | 2018-04-13 | 中国航空工业集团公司北京长城航空测控技术研究所 | A kind of temperature-compensation method and device of silicon on sapphire pressure sensor |
| CN114035142A (en) * | 2021-04-16 | 2022-02-11 | 湖南师范大学 | Electric energy meter error compensation method and system based on segmented Lagrange interpolation |
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| US7517708B2 (en) * | 2007-01-30 | 2009-04-14 | Tokyo Electron Limited | Real-time parameter tuning using wafer temperature |
| KR101367086B1 (en) * | 2013-10-17 | 2014-02-24 | (주)테키스트 | Temperature control system for semiconductor manufacturing system |
| CN106505996B (en) * | 2016-10-12 | 2019-02-12 | 河海大学 | A kind of RTC chip high-precision frequency bias compensation method of combination variable capacitance |
| US11533783B2 (en) * | 2019-07-18 | 2022-12-20 | Applied Materials, Inc. | Multi-zone heater model-based control in semiconductor manufacturing |
| CN114384946B (en) * | 2021-12-17 | 2023-03-14 | 西安北方华创微电子装备有限公司 | Compensation parameter acquisition method and device for semiconductor heat treatment equipment |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107907250A (en) * | 2017-11-23 | 2018-04-13 | 中国航空工业集团公司北京长城航空测控技术研究所 | A kind of temperature-compensation method and device of silicon on sapphire pressure sensor |
| CN114035142A (en) * | 2021-04-16 | 2022-02-11 | 湖南师范大学 | Electric energy meter error compensation method and system based on segmented Lagrange interpolation |
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