CN115028139A - Separation method of MEMS silicon strain gauge - Google Patents
Separation method of MEMS silicon strain gauge Download PDFInfo
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- CN115028139A CN115028139A CN202210511520.3A CN202210511520A CN115028139A CN 115028139 A CN115028139 A CN 115028139A CN 202210511520 A CN202210511520 A CN 202210511520A CN 115028139 A CN115028139 A CN 115028139A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00269—Bonding of solid lids or wafers to the substrate
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C3/00—Assembling of devices or systems from individually processed components
- B81C3/002—Aligning microparts
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0264—Pressure sensors
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/01—Packaging MEMS
- B81C2203/0172—Seals
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- Microelectronics & Electronic Packaging (AREA)
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Abstract
The invention discloses a method for separating an MEMS silicon strain gauge, which comprises the following steps: 1) preparing a silicon substrate wafer, and etching a cavity on the silicon substrate wafer by using an etching process; 2) bonding a silicon wafer on the surface of the cavity by using a silicon-silicon direct bonding process, and forming a top silicon layer by using a thinning or polishing process; 3) processing the piezoresistance, the dielectric layer and the metal bonding pad of the silicon strain gauge on the top silicon layer by adopting a semiconductor micro-nano manufacturing process; 4) etching the silicon strain gauge by using a photoetching or dry etching process to enable the silicon strain gauge to sink to the bottom of the cavity; 5) and removing the photoresist by adopting a photoresist removing process, and taking the silicon substrate wafer with the cavity as a carrier for storing and transporting the silicon strain gauge. The invention can solve the problem that the silicon strain foil processed on the wafer is difficult to separate from the wafer efficiently and with high yield and difficult to store and transport after being separated due to small size, thin thickness and fragile structure.
Description
Technical Field
The invention relates to the field of MEMS chip manufacturing, in particular to a method for separating an MEMS silicon strain gauge.
Background
In the field of high-pressure sensors of 6-200 Mpa, the MEMS silicon cup pressure sensor chip can not be applied, and the chip can be damaged in such a high-pressure environment, and the packaging structure of the chip can not be met. Therefore, the high-voltage sensor generally makes the voltage-dependent bridge resistor on a 17-4PH stainless steel base, and then the base is welded at the interface end of the stainless steel shell by argon arc welding, electron beams, high-energy laser beams and other processes, so as to ensure that the back surface of the base can withstand thousands of kilograms of pressure without air leakage when being pressed.
The micro-melting silicon pressure sensor is one of high pressure sensors, and is characterized in that glass cement is printed on an elastic membrane of a stainless steel base by a screen printing method, then a silicon strain gauge is placed in a stress area of the elastic membrane, and the silicon strain gauge, the glass cement and the elastic membrane are connected into a whole through a high-temperature sintering process at about 500 ℃. The sintering technology of the silicon strain gauge and the glass powder on the surface of the elastic membrane is mature, the stainless steel base enters a sintering furnace through a hot plate automatic conveyor belt, the temperature is automatically raised, the temperature is automatically kept constant, and the automatic annealing treatment is carried out. The silicon strain gauge is manufactured by adopting a method of combining an integrated circuit plane process and a micro-mechanical process technology, can be produced in a large scale, and has good consistency.
The current popular method for separating a silicon strain gauge from a wafer is as follows: thinning and polishing the back of the wafer with the front surface finished with the silicon strain gauge process; gluing the front side of the wafer, and sticking the wafer and a slide glass together; etching the back surface of the wafer to the silicon strain gauge structure by a wet method; separating the silicon strain foil from the slide by soaking in an organic solution; and picking the decomposed silicon strain gauges one by one to a special carrier. The existing silicon strain foil decomposition method has the following defects: the separation step is complicated, the operation is difficult, and the mass production is difficult; in the wet etching step, the process is difficult to accurately control, so that the thicknesses of the silicon strain gauges are inconsistent, and the product yield is low; after the silicon strain sheet is separated from the carrier, the silicon strain sheet is scattered in the solution, so that the silicon strain sheet is difficult to clamp and pick, the yield is further reduced, the operation is difficult, and the mass production is difficult; the decomposed silicon strain gauges are not well stored and transported by carriers.
Disclosure of Invention
The method for separating the MEMS silicon strain gauge can solve the problem that the silicon strain gauge processed on the wafer is difficult to separate from the wafer efficiently and in high yield and is difficult to store and transport after being separated due to small size, thin thickness and fragile structure.
In order to achieve the purpose, the invention adopts the following technical scheme: a separation method of a MEMS silicon strain gauge comprises the following steps:
1) preparing a silicon substrate wafer, and etching a cavity on the silicon substrate wafer by using an etching process;
2) bonding a silicon chip on the surface of the cavity by using a silicon-silicon direct bonding process, and thinning the thickness of the silicon chip to a preset thickness by using a thinning or polishing process to form a top silicon layer;
3) processing the piezoresistance, the dielectric layer and the metal bonding pad of the silicon strain gauge on the top silicon layer by adopting a semiconductor micro-nano manufacturing process;
4) etching the silicon strain gauge by using a photoetching or dry etching process, and simultaneously completely etching and separating the silicon strain gauge from the top silicon layer to enable the silicon strain gauge to sink to the bottom of the cavity;
5) and removing the photoresist by adopting a photoresist removing process to obtain a separated silicon strain gauge, and taking the silicon substrate wafer with the cavity as a carrier for storing and transporting the silicon strain gauge.
As a further description of the above technical solution:
the silicon substrate wafer and the silicon wafer are both Cavity-SOI wafers.
As a further description of the above technical solution:
the etching process in the step 1) is a dry etching process or a wet etching process.
As a further description of the above technical solution:
the depth of the cavity is 10-300 microns, and the area of the cavity is larger than that of the silicon strain gauge.
As a further description of the above technical solution:
the thickness of the top silicon layer in the step 2) is 8-20 microns.
As a further description of the above technical solution:
the semiconductor micro-nano manufacturing process in the step 3) is an oxidation, epitaxy, photoetching, etching, ion implantation, annealing or metal deposition semiconductor micro-nano manufacturing process.
As a further description of the above technical solution:
the photoresist removing process in the step 5) is a dry photoresist removing process.
In summary, due to the adoption of the technical scheme, the invention has the beneficial effects that:
1. the Cavity-SOI structure is applied to the manufacturing and separating process of the silicon strain gauge, so that extra complicated separating process steps with low yield are not needed, the silicon strain gauge separating step is optimized, after the silicon strain gauge process is completed on the Cavity-SOI, the silicon strain gauge can be directly separated and fall in a Cavity, the separating process is simple, the yield is high, and the Cavity-SOI structure is suitable for mass production.
2. The silicon substrate slice with the cavity directly bears the silicon strain gauge falling into the cavity, and no additional carrier or sorting action is needed, so that the yield and the capacity are further improved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained according to the drawings without inventive efforts.
FIG. 1 is a schematic structural diagram of step 2) in a separation method of a MEMS silicon strain gauge.
FIG. 2 is a schematic structural diagram of step 3) in the separation method of the MEMS silicon strain gauge.
FIG. 3 is a schematic structural diagram of step 4) in the separation method of the MEMS silicon strain gauge.
FIG. 4 is a schematic structural diagram of step 5) in the separation method of the MEMS silicon strain gauge.
Illustration of the drawings:
1. a silicon substrate wafer; 2. a top silicon layer; 3. pressure resistance; 4. a dielectric layer; 5. a metal pad; 6. a cavity.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. The components of embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations. Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention. It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures. In the description of the embodiments of the present invention, it should be noted that the terms "upper", "inner", and the like refer to orientations or positional relationships based on the orientations or positional relationships shown in the drawings or orientations or positional relationships that are conventionally arranged when the products of the present invention are used, and are used only for convenience in describing the present invention and simplifying the description, but do not indicate or imply that the devices or elements referred to must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present invention. In the description of the present invention, it should also be noted that, unless otherwise explicitly specified or limited, the terms "disposed," "mounted," "connected," and "connected" are to be construed broadly and may, for example, be fixedly connected, detachably connected, or integrally connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
Referring to fig. 1-4, the present invention provides a technical solution: a separation method of a MEMS silicon strain gauge comprises the following steps:
1) preparing a silicon substrate wafer, and etching a cavity on the silicon substrate wafer by using an etching process;
2) bonding a silicon chip on the surface of the cavity by using a silicon-silicon direct bonding process, and thinning the thickness of the silicon chip to a preset thickness by using a thinning or polishing process to form a top silicon layer;
3) processing the piezoresistance, the dielectric layer and the metal bonding pad of the silicon strain gauge on the top silicon layer by adopting a semiconductor micro-nano manufacturing process;
4) etching a silicon strain gauge by using a photoetching or dry etching process, and completely etching and separating the silicon strain gauge from the top silicon layer at the same time to ensure that the silicon strain gauge sinks to the bottom of the cavity;
5) and removing the photoresist by adopting a photoresist removing process to obtain a separated silicon strain gauge, and taking the silicon substrate wafer with the cavity as a carrier for storing and transporting the silicon strain gauge.
The silicon substrate wafer and the silicon wafer are both Cavity-SOI wafers.
The etching process in the step 1) is a dry etching process or a wet etching process. Particularly, the dry etching process can be accurately controlled, so that the thickness of the silicon strain gauge is consistent, and the yield of products is improved.
The depth of the cavity is 10-300 microns, and the area of the cavity is larger than that of the silicon strain gauge. The depth of the specific cavity is 12 microns, the area of the cavity is larger than that of the silicon strain gauge, so that the silicon strain gauge can fall into the cavity conveniently, the silicon strain gauge is prevented from being damaged by collision, and the silicon strain gauge can be taken out conveniently.
The thickness of the top silicon layer in the step 2) is 8-20 microns. The specific thickness is based on the design of the silicon strain gauge, and can be 9 micrometers, 10 micrometers, 11 micrometers and the like.
The semiconductor micro-nano manufacturing process in the step 3) is an oxidation, epitaxy, photoetching, etching, ion implantation, annealing or metal deposition semiconductor micro-nano manufacturing process.
The photoresist removing process in the step 5) is a dry photoresist removing process. The production yield of the product can be improved.
The working principle is as follows: the invention uses Cavity-SOI wafers to manufacture silicon strain gages. The size of the cavity on the silicon substrate wafer is slightly larger than that of the silicon strain gauge. As shown in fig. 2, the processing of the piezoresistance, the dielectric layer and the metal pad is completed on the surface of the top silicon layer. Then, the silicon strain gauge is etched out by using a dry etching process, and meanwhile, as the etched silicon strain gauge is not connected with the top silicon layer, the silicon strain gauge sinks in the cavity, so that the separation of the silicon strain gauge from the top silicon layer is completed, as shown in fig. 3 and 4. After the silicon strain gauge is sunk into the cavity, the silicon substrate wafer with the cavity also becomes an optimal carrier for storing and transporting the silicon strain gauge.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art should be considered to be within the technical scope of the present invention, and the technical solutions and the inventive concepts thereof according to the present invention should be equivalent or changed within the scope of the present invention.
Claims (7)
1. A separation method of a MEMS silicon strain gauge is characterized by comprising the following steps:
1) preparing a silicon substrate wafer, and etching a cavity on the silicon substrate wafer by using an etching process;
2) bonding a silicon chip on the surface of the cavity by using a silicon-silicon direct bonding process, and thinning the thickness of the silicon chip to a preset thickness by using a thinning or polishing process to form a top silicon layer;
3) processing the piezoresistance, the dielectric layer and the metal bonding pad of the silicon strain gauge on the top silicon layer by adopting a semiconductor micro-nano manufacturing process;
4) etching a silicon strain gauge by using a photoetching or dry etching process, and completely etching and separating the silicon strain gauge from the top silicon layer at the same time to ensure that the silicon strain gauge sinks to the bottom of the cavity;
5) and removing the photoresist by adopting a photoresist removing process to obtain a separated silicon strain gauge, and taking the silicon substrate wafer with the cavity as a carrier for storing and transporting the silicon strain gauge.
2. The method as claimed in claim 1, wherein the silicon substrate wafer and the silicon wafer are Cavity-SOI wafers.
3. The method for separating the MEMS silicon strain gauge according to claim 1, wherein the etching process in the step 1) is a dry etching process or a wet etching process.
4. The method of claim 1, wherein the depth of the cavity is 10-300 μm, and the area of the cavity is larger than the area of the silicon strain gauge.
5. The method for separating the MEMS silicon strain gauge according to claim 1, wherein the thickness of the top silicon layer in the step 2) is 8-20 microns.
6. The method for separating the MEMS silicon strain gauge according to claim 1, wherein the semiconductor micro-nano manufacturing process in the step 3) is an oxidation, epitaxy, photoetching, etching, ion implantation, annealing or metal deposition semiconductor micro-nano manufacturing process.
7. The method for separating the MEMS silicon strain gauge according to claim 1, wherein the photoresist removing process in the step 5) is a dry photoresist removing process.
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| CN202210511520.3A CN115028139B (en) | 2022-05-10 | 2022-05-10 | Separation method of MEMS silicon strain gauge |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116770442A (en) * | 2023-07-26 | 2023-09-19 | 广东润宇传感器股份有限公司 | Protective agent removing device and strain gauge etching separation method |
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| CN111146155A (en) * | 2020-01-02 | 2020-05-12 | 上海航天电子通讯设备研究所 | Microwave power amplifier chip carrier and preparation method thereof |
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2022
- 2022-05-10 CN CN202210511520.3A patent/CN115028139B/en active Active
Patent Citations (8)
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| JPH06302834A (en) * | 1993-04-09 | 1994-10-28 | Fujikura Ltd | Manufacture of thin-film structure |
| US20070117260A1 (en) * | 2005-11-18 | 2007-05-24 | Denso Corporation | Method of manufacturing semiconductor sensor |
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| US20160265986A1 (en) * | 2015-03-13 | 2016-09-15 | Kabushiki Kaisha Toshiba | Sensor and sensor system |
| CN105800547A (en) * | 2016-04-08 | 2016-07-27 | 厦门大学 | Temporary bonding method for wafer-level ultra-thin silicon wafer in chemical-mechanical polishing |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116770442A (en) * | 2023-07-26 | 2023-09-19 | 广东润宇传感器股份有限公司 | Protective agent removing device and strain gauge etching separation method |
| CN116770442B (en) * | 2023-07-26 | 2024-01-30 | 广东润宇传感器股份有限公司 | Protective agent removing device and strain gauge etching separation method |
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| CN115028139B (en) | 2023-05-16 |
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