CN115004348A - Semiconductor laser device - Google Patents

Semiconductor laser device Download PDF

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Publication number
CN115004348A
CN115004348A CN202180010942.6A CN202180010942A CN115004348A CN 115004348 A CN115004348 A CN 115004348A CN 202180010942 A CN202180010942 A CN 202180010942A CN 115004348 A CN115004348 A CN 115004348A
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China
Prior art keywords
semiconductor laser
electrode
metal
laser device
electrode block
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CN202180010942.6A
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Chinese (zh)
Inventor
菱田光起
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Panasonic Intellectual Property Management Co Ltd
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Panasonic Intellectual Property Management Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
    • H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/02365—Fixing laser chips on mounts by clamping
    • H—ELECTRICITY
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    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
    • H—ELECTRICITY
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    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
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    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/274—Manufacturing methods by blanket deposition of the material of the layer connector
    • H01L2224/2746—Plating
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    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/481—Disposition
    • H01L2224/4813—Connecting within a semiconductor or solid-state body, i.e. fly wire, bridge wire
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    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/831—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
    • H01L2224/83101—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12042—LASER
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02476—Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Lasers (AREA)

Abstract

The semiconductor laser device of the present disclosure includes: a semiconductor laser element (110) including a 1 st electrode (111) and a 2 nd electrode; a conductive section (130) disposed on the 1 st electrode (111); and an electrode block electrically connected to the semiconductor laser element (110) via the conductive section (130). The conductive section (130) includes a plurality of metal members (131) arranged in contact with the 1 st electrode (111), and a conductive layer (132) arranged to fill the spaces between the plurality of metal members (131). The metal member (131) includes a metal lead portion (131 b). A part of the metal lead portion (131b) protrudes from the conductive layer (132). The part of the metal lead portion (131b) includes a bent portion having an arc-like shape protruding toward the electrode block.

Description

Semiconductor laser device
Technical Field
The present disclosure relates to a semiconductor laser device.
Background
In recent years, in a semiconductor device including a semiconductor laser element, a current flowing through the semiconductor element increases, and accordingly, a heat generation amount of the semiconductor element increases. For example, a high-output semiconductor laser device used for laser processing generates a large amount of heat. The performance of the semiconductor laser element is degraded at high temperature, resulting in degradation of laser output and the like. Therefore, a high-output semiconductor device has a structure for cooling a semiconductor laser element. Semiconductor devices having such a structure have been proposed (for example, patent documents 1 to 3).
Prior art documents
Patent literature
Patent document 1: japanese laid-open patent publication No. 2003-086883
Patent document 2: international publication No. 2016/103536
Patent document 3: international publication No. 2019/009172
Disclosure of Invention
Problems to be solved by the invention
Currently, there is a demand for a technique for improving heat dissipation in a semiconductor laser device with a simple structure. Under such circumstances, the present disclosure has an object to provide a semiconductor laser device having high heat dissipation.
Means for solving the problems
One aspect of the present disclosure relates to a semiconductor laser device. The semiconductor laser device includes a semiconductor laser element including a 1 st electrode and a 2 nd electrode, a conductive portion disposed on the 1 st electrode, and an electrode block electrically connected to the 1 st electrode via the conductive portion, wherein the conductive portion includes a plurality of metal members disposed in contact with the 1 st electrode, and a conductive layer disposed to fill in between the plurality of metal members, the metal members include metal lead portions, a part of the metal lead portions protrudes from the conductive layer, and the part of the metal lead portions includes a bent portion having an arc shape protruding toward the electrode block.
Effects of the invention
According to the present disclosure, a semiconductor laser device having high heat dissipation can be obtained.
Drawings
Fig. 1 is a cross-sectional view schematically showing an example of a semiconductor laser device of the present disclosure.
Fig. 2A schematically shows a plan view of the conductive portion as viewed from the 1 st electrode block side.
Fig. 2B schematically shows a cross-sectional view of the semiconductor laser element and the conductive portion at a line IIB-IIB in fig. 2A.
Detailed Description
Embodiments of the semiconductor laser device of the present disclosure will be described below with reference to examples. However, the present disclosure is not limited to the examples described below. In the following description, specific numerical values and materials are exemplified in some cases, but other numerical values and materials may be applied as long as the effects of the present disclosure are obtained.
(semiconductor laser device)
The semiconductor laser device of the present disclosure includes: a semiconductor laser element including a 1 st electrode and a 2 nd electrode; a conductive part disposed on the 1 st electrode; and an electrode block electrically connected to the 1 st electrode via the conductive portion. These are explained below.
(semiconductor laser element)
The semiconductor laser device is not particularly limited, and a known semiconductor laser device can be used. The semiconductor laser element may have a plate-like shape as a whole, and the plate-like shape may have a 1 st surface and a 2 nd surface opposite to the 1 st surface. For example, the semiconductor laser element may have a plate shape having a rectangular planar shape. The 1 st electrode may be formed on the 1 st surface, and the 2 nd electrode may be formed on the 2 nd surface.
The semiconductor laser element may have an emission end surface on a side surface connecting the 1 st surface and the 2 nd surface. The semiconductor laser element may have a plurality of emission end faces (emission end faces of laser light). The plurality of emission end faces may be arranged in a row along a longitudinal direction of a side face of the semiconductor laser element on the side face. Such a semiconductor laser device has been proposed conventionally, and these known semiconductor laser devices can be used. For example, a semiconductor Laser element used for a semiconductor Laser called a DDL (Direct Diode Laser) may be used. In such a semiconductor laser device, the 1 st electrode and the 2 nd electrode may have a two-dimensionally extended shape. For example, the 1 st electrode and the 2 nd electrode may have rectangular planar shapes, respectively. An exemplary semiconductor laser device includes a plurality of resonators arranged in a stripe pattern.
(electrode block)
The electrode block is a block having conductivity. As the electrode block, for example, a block made of metal can be used. An example of the electrode block is a copper block (block made of copper). The surface of the copper block may be plated with a metal other than copper, for example, nickel and gold may be sequentially plated. The electrode block can function as a part of an electrode wiring for passing a current through the first electrode 1 and a part of a member for dissipating heat generated by the semiconductor laser element.
In general, a semiconductor laser device includes two electrode blocks (a 1 st electrode block and a 2 nd electrode block). The 1 st electrode block is electrically connected to the 1 st electrode of the semiconductor laser element via a conductive portion. The 2 nd electrode block is electrically connected to the 2 nd electrode of the semiconductor laser element.
(conductive part)
The conductive portion includes a plurality of metal members arranged to be in contact with the 1 st electrode, and a conductive layer arranged to fill in between the plurality of metal members. The conductive layer is formed to contact the 1 st electrode.
The metal member includes a metal lead portion. A portion of the metal lead portion protrudes from the conductive layer. Hereinafter, the portion protruding from the conductive layer may be referred to as a "protruding portion (P)". Examples of the material of the metal member include gold, copper, aluminum, and the like. One preferable example of the material of the metal member is gold. Further, a small amount of an additive may be added to the material of the metal member. As the material of the metal member, a known material used for wire bonding may also be used.
The part (protrusion part (P)) of the metal lead part includes a bent part having an arc shape protruding toward the electrode block. According to this structure, the bent portion can particularly flexibly receive the electrode block.
As described later, the metal member may also be formed using a wire bonding machine used for wire bonding. Thus, the metal member including the metal lead portion can be easily formed. Further, by using a wire bonding machine, a metal lead portion having a shape described later can be easily formed.
The protruding part (P) of the metal lead part flexibly receives the electrode block. In addition, the height of the metal lead portion can be flexibly adjusted. Therefore, the protruding portions (P) of the metal lead portions can be brought into contact with the electrode block (or the connection layer formed on the electrode block) as many as possible. As a result, the contact resistance between the metal member and the electrode block can be reduced, and the semiconductor laser element and the electrode block can be electrically connected to each other well. Furthermore, the protruding portion (P) flexibly contacts the electrode block, thereby relaxing stress acting between the semiconductor laser element and the electrode block. As a result, physical damage to the semiconductor laser element can be suppressed.
Further, in the semiconductor laser device of the present disclosure, a conductive layer is disposed between the 1 st electrode and the electrode block. The conductive layer and the metal member can efficiently transfer heat generated by the semiconductor laser element to the electrode block. That is, in the semiconductor laser device of the present disclosure, high heat dissipation can be achieved as compared with the case where heat generated by the semiconductor laser element is transferred to the electrode block only by the bump. In addition, compared with the case where the 1 st electrode and the electrode block are electrically connected only by the bump, the use of the conductive layer can reduce the resistance between the 1 st electrode and the electrode block.
As described above, according to the present disclosure, a semiconductor laser device having high heat dissipation and less physical damage to a semiconductor laser element can be obtained. Further, according to the present disclosure, the resistance between the 1 st electrode and the electrode block can be reduced.
The plurality of metal members are preferably arranged at substantially equal intervals. The plurality of metal members may be arranged in a matrix. The metal member rows including the plurality of metal members arranged at equal intervals may be arranged at equal intervals in a stripe shape.
The surface density of the metal component can be 50-1000 pieces/cm 2 In a range of (e.g., 100 to 300 pieces/cm) 2 Range of (d). By setting the range, particularly, electrical connection and physical connection become favorable.
The average (arithmetic average) height H of the metal member (i.e., the distance from the surface of the 1 st electrode to the highest portion of the metal lead portion) may be in the range of 70 to 300 μm (e.g., 150 to 200 μm). By setting the range, particularly electrical connection and physical connection become favorable.
The average thickness D of the conductive layer may be in the range of 60 μm to 250 μm (for example, 100 μm to 150 μm). The average height H (μm) of the metal member may be in a range of 1.1 to 2.0 times (for example, in a range of 1.2 to 1.5 times) the average thickness D (μm) of the conductive layer. By setting the range, the metal lead portion protruding from the conductive layer can be particularly flexibly received by the electrode block. The average thickness D of the conductive layer can be obtained, for example, by (volume of the portion where the conductive layer is formed)/(area of the portion where the conductive layer is formed) the average thickness D. Here, the volume and area of the portion where the conductive layer is formed also include the volume and area of the metal member present in the portion.
The metal lead portion may have a dome shape protruding toward the electrode block. The metal member may include a 1 st base portion and a 2 nd base portion in contact with the 1 st electrode. The two ends of the metal lead portion may be connected to the 1 st base portion and the 2 nd base portion, respectively. The metal lead portion may be an arch lead having both ends connected to the 1 st base portion and the 2 nd base portion, respectively. The 1 st base and the 2 nd base may have a hemispherical shape or a cylindrical shape, respectively.
The conductive layer may also contain metal particles. By using the metal particles, the thermal conductivity and the electrical conductivity of the electrically conductive layer can be improved. Such a conductive layer may be formed of a metal paste (paste containing metal particles), for example, a gold paste (paste containing gold particles) or a silver paste (paste containing silver particles). As the metal paste, a known metal paste used for manufacturing a semiconductor device can be used.
The method for manufacturing the semiconductor laser device of the present disclosure is not particularly limited. In embodiment 1, an example of the production method will be described.
Hereinafter, an example of the semiconductor laser device of the present disclosure will be described in detail with reference to the drawings. The above-described components can be applied to components of a semiconductor laser device described below as an example. The components of the semiconductor laser device described below as an example can be modified based on the above description. Note that the following matters may be applied to the above-described embodiment. Among the components of the semiconductor laser device described below as an example, components that are not essential to the semiconductor laser device of the present disclosure may be omitted. The drawings shown below are schematic and do not accurately reflect the shape and number of actual members.
(embodiment mode 1)
Fig. 1 schematically shows a cross-sectional view of a semiconductor laser device 100 according to embodiment 1. The semiconductor laser device 100 includes a semiconductor laser element 110, a 1 st electrode block (upper electrode block) 121, a 2 nd electrode block 122, a mount (Submount)123, an insulating layer 124, and a conductive portion 130.
The semiconductor laser element 110 may have a plurality of emission end faces. The plurality of emission end surfaces may be arranged in a row along the longitudinal direction of the side wall of the semiconductor laser element 110.
The semiconductor laser element 110 includes a 1 st electrode 111 (see fig. 2B) provided on a portion facing the conductive portion 130, and a 2 nd electrode (not shown) provided on a portion facing the mount 123. The 1 st electrode 111 is electrically connected to the 1 st electrode block 121 via the conductive portion 130. The 2 nd electrode is electrically connected to the 2 nd electrode block 122 via the mount 123. The 1 st and 2 nd electrode blocks 121 and 122 are connected to a power supply (not shown) for injecting a current into the semiconductor laser element 110. Current is injected into the active layer of the semiconductor laser element 110 by the power supply.
The base 123 is formed of a material having high electrical conductivity and thermal conductivity. The thermal expansion coefficient of the mount 123 is preferably close to that of the semiconductor laser element 110. The mount is not particularly limited, and a known mount used for a semiconductor laser device may be applied. The base 123 may be formed of copper-tungsten alloy or copper-molybdenum alloy.
A conductive connecting layer for connecting the 2 nd electrode block 122 and the base 123 may be provided between them. The connection layer may be, for example, a solder layer, a plating layer, a metal foil layer, or the like (the same applies to the connection layer described below). Similarly, a connection layer for connecting the mount 123 and the semiconductor laser element 110 may be provided therebetween, or a connection layer for connecting the conductive portion 130 and the 1 st electrode block 121 may be provided therebetween.
The insulating layer 124 insulates the 1 st electrode block 121 and the 2 nd electrode block 122. The insulating layer 124 is formed of a material having an insulating property. The insulating layer 124 may be formed of an inorganic insulating material (e.g., ceramic such as aluminum nitride) and/or an organic insulating material (e.g., insulating resin such as polyimide). The insulating layer 124 may include polyimide, aluminum nitride, or the like.
Fig. 2A schematically shows a plan view of the conductive portion 130 when viewed from the 1 st electrode block 121 side. Fig. 2B schematically shows a cross-sectional view of the semiconductor laser element 110 and the conductive portion 130 on the line IIB-IIB in fig. 2A.
The conductive portion 130 includes a plurality of metal members 131 and a conductive layer 132 disposed to fill the space between the plurality of metal members 131. The plurality of metal members 131 and the conductive layer 132 are disposed so as to be in contact with the 1 st electrode 111 of the semiconductor laser element 110. In the example shown in fig. 1, the plurality of metal members 131 are arranged in a matrix. In another aspect, the plurality of metal members 131 are arranged at lattice points.
The metal member 131 includes a 1 st base portion 131a in a convex block shape contacting the 1 st electrode 111, and a metal lead portion 131b extending from the 1 st base portion 131 a. In the example shown in embodiment 1, both ends of the metal lead portion 131b are connected to the 1 st base portion 131a and the 2 nd base portion 131c, respectively. In one aspect, the metal lead portion 131b has an arch shape. In addition, the base portion 131c may not be in contact with the electrode 111, but even in this case, the metal lead portion 131b has an arch shape as described above.
A protruding portion 131bp (protruding portion (P)) as a part of the metal lead portion 131b protrudes from the conductive layer 132. The protrusion 131bp includes a curved portion having an arc shape protruding toward the 1 st electrode block 121. At least the upper portion of the bent portion is in physical contact with the 1 st electrode block 121 (or a connection layer formed on the 1 st electrode block). That is, the 1 st electrode 111 and the 1 st electrode block 121 are electrically connected at least via the upper portion of the bent portion.
The conductive layer 132 is disposed so as to cover a portion of the surface of the 1 st electrode 111 which is not covered with the metal member 131. The conductive layer 132 contains metal fine particles. In addition, a part of the material constituting the conductive layer 132 may adhere to the protruding portion 131bp of the metal lead portion 131b, but the material adhering to the protruding portion 131bp does not constitute a layer and is therefore not included in the conductive layer 132.
In the semiconductor laser device 100 according to embodiment 1, the metal lead portion 131b having elasticity (specifically, the protruding portion 131bp including a bent portion) is electrically connected to the 1 st electrode block 121 (or the connection layer). Therefore, even if there is variation in the shape and height of the plurality of metal members 131, electrical connection can be formed uniformly and stably. Further, the stress applied between the semiconductor laser element 110 and the 1 st electrode block 121 can be relaxed by the metal lead portion 131 b. In the semiconductor laser device 100, the conductive layer 132 improves the electrical conductivity and the thermal conductivity of the conductive portion 130. Therefore, the semiconductor laser device 100 has high heat dissipation and causes little physical damage to the semiconductor laser element 110. Further, in the semiconductor laser device 100, the loss due to the resistance between the semiconductor laser element 110 and the 1 st electrode block 121 is small.
An example of a method for manufacturing the semiconductor laser device 100 will be described below. A known method can be applied to the formation method of the portions other than the conductive portion 130, and thus detailed description thereof is omitted. An example in which the metal member 131 is made of gold will be described below.
In the process of forming the conductive portion 130, first, the metal member 131 is formed on the 1 st electrode 111 using a wire bonding machine. Specifically, the 1 st base 131a is formed by connecting a spherical portion formed at the tip of a gold wire to the 1 st electrode 111 by a ball bonding method using a wire bonding machine. Then, the gold wire (metal lead portion 131b) is extended to a certain length. Then, the wire bonder was operated to make the gold wire arch-shaped so as to form the arch-shaped metal lead portion 131B shown in fig. 2B, and a high current was applied to cut the gold wire when the gold wire was pressed against the electrode 111. In this way, the metal member 131 including the arch-shaped metal lead portion 131b is formed.
Next, a conductive layer 132 is formed. First, a metal paste (e.g., silver paste) is applied onto the 1 st electrode 111 in a layer form. That is, the metal paste is applied to fill the gaps between the plurality of metal members 131. In this case, the metal paste may be applied so that a part of the metal member 131 is exposed, or the metal paste may be applied so that the entire metal member 131 is completely covered. In any case, when the formation of the conductive layer 132 is completed, a part of the metal member 131 (the protruding portion 131bp) may be exposed from the conductive layer 132.
After the metal paste is applied, the surface of the metal paste may be flattened as necessary. For example, the surface of the metal paste may be flattened by a nonwoven fabric or the like. After the metal paste is applied so that the entire metal member 131 is completely covered, a part of the metal member 131 may be exposed from the metal paste layer when the surface of the metal paste is flattened.
Then, the metal paste is heated (fired) to form the conductive layer 132. The heating conditions can be selected according to the metal paste. Further, the heating may be performed in a plurality of times. For example, after the metal paste is applied, heating (pre-firing) may be performed at a relatively low temperature, and after the semiconductor laser device 100 is assembled, heating may be performed at a high temperature.
The step of forming the conductive portion 130 at which stage is performed is not limited, and may be performed at any stage where the conductive portion 130 can be formed. For example, the conductive portion 130 may be formed before the mount 123 on which the semiconductor laser element 110 is mounted is bonded to the 2 nd electrode block 122, or may be formed after the bonding.
After the conductive portions 130 are formed, the semiconductor laser device 100 can be assembled by a known method. For example, first, the insulating layer 124 is formed on the 2 nd electrode block 122. Further, a mount 123 on which the semiconductor laser element 110 is mounted is joined to the 2 nd electrode block 122. A conductive portion 130 is formed on the 1 st electrode 111 of the semiconductor laser element 110. Then, the 1 st electrode block 121 is placed on the insulating layer 124 and the conductive portion 130. As described above, a connection layer may be disposed between the conductive portion 130 and the 1 st electrode block 121. In this case, the connection layer is formed on the 1 st electrode block 121.
As described above, the semiconductor laser device 100 can be manufactured. The above-described manufacturing method is an example, and the semiconductor laser device of the present disclosure can be manufactured by any method.
Industrial applicability
The present disclosure can be applied to a semiconductor laser device.
Description of the symbols
100: a semiconductor laser device;
110: a semiconductor laser element;
111: a 1 st electrode;
130: a conductive portion;
131: a metal member;
131 a: a 1 st base;
131 b: a metal lead part;
131 bp: a protruding portion (a part of the metal lead portion, a bent portion);
131 c: a 2 nd base;
132: and a conductive layer.

Claims (3)

1. A semiconductor laser device, comprising:
a semiconductor laser element including a 1 st electrode and a 2 nd electrode;
a conductive portion disposed on the 1 st electrode; and
an electrode block electrically connected to the 1 st electrode via the conductive portion,
the conductive portion includes a plurality of metal members configured to be in contact with the 1 st electrode, and a conductive layer configured to bury between the plurality of metal members,
the metal member includes a metal lead portion,
a portion of the metal lead portion protrudes from the conductive layer,
the portion of the metal lead portion includes a bent portion having an arc shape protruding toward the electrode block.
2. The semiconductor laser device according to claim 1,
the metal lead portion has an arch shape protruding toward the electrode block.
3. The semiconductor laser device according to claim 1 or 2,
the conductive layer includes metal particles.
CN202180010942.6A 2020-02-27 2021-02-10 Semiconductor laser device Pending CN115004348A (en)

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US7032311B2 (en) 2002-06-25 2006-04-25 Eli Razon Stabilized wire bonded electrical connections and method of making same
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