CN115003620A - 一种石墨岛滑块阵列的制备方法 - Google Patents
一种石墨岛滑块阵列的制备方法 Download PDFInfo
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- CN115003620A CN115003620A CN202080092510.XA CN202080092510A CN115003620A CN 115003620 A CN115003620 A CN 115003620A CN 202080092510 A CN202080092510 A CN 202080092510A CN 115003620 A CN115003620 A CN 115003620A
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 76
- 229910002804 graphite Inorganic materials 0.000 title claims abstract description 75
- 239000010439 graphite Substances 0.000 title claims abstract description 75
- 238000002360 preparation method Methods 0.000 title claims description 10
- 239000013078 crystal Substances 0.000 claims abstract description 32
- 238000005530 etching Methods 0.000 claims abstract description 27
- 238000000034 method Methods 0.000 claims abstract description 23
- 238000001514 detection method Methods 0.000 claims abstract description 13
- 229920002120 photoresistant polymer Polymers 0.000 claims description 40
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 238000000059 patterning Methods 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 229910052681 coesite Inorganic materials 0.000 claims description 4
- 229910052906 cristobalite Inorganic materials 0.000 claims description 4
- 238000001020 plasma etching Methods 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- 238000004528 spin coating Methods 0.000 claims description 4
- 229910052682 stishovite Inorganic materials 0.000 claims description 4
- 229910052905 tridymite Inorganic materials 0.000 claims description 4
- 238000000333 X-ray scattering Methods 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 3
- 238000000572 ellipsometry Methods 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 239000000523 sample Substances 0.000 description 8
- 239000000758 substrate Substances 0.000 description 7
- 238000003491 array Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 2
- 239000007770 graphite material Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000011449 brick Substances 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000005461 lubrication Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 description 1
- 229910052982 molybdenum disulfide Inorganic materials 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00198—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising elements which are movable in relation to each other, e.g. comprising slidable or rotatable elements
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/20—Graphite
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B5/00—Devices comprising elements which are movable in relation to each other, e.g. comprising slidable or rotatable elements
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00206—Processes for functionalising a surface, e.g. provide the surface with specific mechanical, chemical or biological properties
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Organic Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Life Sciences & Earth Sciences (AREA)
- Molecular Biology (AREA)
- General Health & Medical Sciences (AREA)
- Inorganic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- General Life Sciences & Earth Sciences (AREA)
- Geology (AREA)
- Adjustment Of The Magnetic Head Position Track Following On Tapes (AREA)
- Carbon And Carbon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Lubricants (AREA)
Abstract
本发明提供了一种批量制备石墨岛滑块阵列的方法，该方法在制备石墨岛滑块阵列的过程中增加晶粒结构检测步骤，并通过控制后续的刻蚀步骤，使滑块内部有且仅有一个晶界面，当剪切这些滑块时，它们将从唯一的晶界面滑开。采用本发明的方法制备的滑块阵列，具有统一的滑移面和高度，一致性好。
Description
PCT国内申请，说明书已公开。
Claims (10)
- PCT国内申请，权利要求书已公开。
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2020/098477 WO2022000120A1 (zh) | 2020-06-28 | 2020-06-28 | 一种石墨岛滑块阵列的制备方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115003620A true CN115003620A (zh) | 2022-09-02 |
Family
ID=79317762
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202080092510.XA Pending CN115003620A (zh) | 2020-06-28 | 2020-06-28 | 一种石墨岛滑块阵列的制备方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20240043266A1 (zh) |
| EP (1) | EP4112536A4 (zh) |
| JP (1) | JP7384368B2 (zh) |
| KR (1) | KR20220166315A (zh) |
| CN (1) | CN115003620A (zh) |
| WO (1) | WO2022000120A1 (zh) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113582125B (zh) * | 2021-07-21 | 2023-06-06 | 深圳清华大学研究院 | 一种超滑封装器件及其封装方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103011140B (zh) * | 2012-12-07 | 2014-10-22 | 同济大学 | 利用光刻胶制备石墨烯/石墨图案的方法 |
| CN103121659A (zh) * | 2013-01-15 | 2013-05-29 | 西北工业大学 | 用光刻工艺在高定向热解石墨上加工微结构的方法 |
| CN103438348B (zh) | 2013-08-15 | 2018-01-12 | 清华大学 | 一种多级超滑结构、具有该结构的器件及其形成方法 |
| JP7140822B2 (ja) * | 2018-03-09 | 2022-09-21 | 株式会社カネカ | 配線回路、その製造方法 |
| CN109827700A (zh) * | 2019-03-04 | 2019-05-31 | 温州大学 | 一种双片式石墨基压阻式柔性压力传感器及其制作工艺 |
| CN109979490B (zh) * | 2019-03-26 | 2021-02-12 | 深圳清力技术有限公司 | 一种多磁头并排的接触式读写硬盘 |
| CN109949832B (zh) * | 2019-03-26 | 2021-06-04 | 北京清正泰科技术有限公司 | 一种基于超滑结构形成的接触式磁头滑块 |
-
2020
- 2020-06-28 EP EP20942675.8A patent/EP4112536A4/en active Pending
- 2020-06-28 WO PCT/CN2020/098477 patent/WO2022000120A1/zh active Application Filing
- 2020-06-28 US US17/923,254 patent/US20240043266A1/en active Pending
- 2020-06-28 JP JP2022559676A patent/JP7384368B2/ja active Active
- 2020-06-28 CN CN202080092510.XA patent/CN115003620A/zh active Pending
- 2020-06-28 KR KR1020227038944A patent/KR20220166315A/ko active Search and Examination
Also Published As
| Publication number | Publication date |
|---|---|
| US20240043266A1 (en) | 2024-02-08 |
| EP4112536A1 (en) | 2023-01-04 |
| KR20220166315A (ko) | 2022-12-16 |
| JP2023520431A (ja) | 2023-05-17 |
| JP7384368B2 (ja) | 2023-11-21 |
| WO2022000120A1 (zh) | 2022-01-06 |
| EP4112536A4 (en) | 2023-07-26 |
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